CN112636147A - Satellite-borne high-energy all-solid-state slab laser system - Google Patents
Satellite-borne high-energy all-solid-state slab laser system Download PDFInfo
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- CN112636147A CN112636147A CN202011524482.2A CN202011524482A CN112636147A CN 112636147 A CN112636147 A CN 112636147A CN 202011524482 A CN202011524482 A CN 202011524482A CN 112636147 A CN112636147 A CN 112636147A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08054—Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10061—Polarization control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
Abstract
The invention provides a satellite-borne high-energy all-solid-state slab laser system which comprises an oscillator, a coupling system and an amplifier, wherein the oscillator is used for generating laser, the coupling system is used for polarizing and expanding laser beams, and the amplifier is used for amplifying the energy of the coupled laser beams; the oscillator comprises a first pumping module, the amplifier comprises a second pumping module, and the first pumping module and the second pumping module comprise laser crystals with the same size and shape and semiconductor laser diode arrays with the same number; the oscillator is provided with an electro-optic Q-switching crystal. The invention adopts PMO-PA amplification mode to get rid of the use of the isolator and simultaneously ensures large energy output; the orthogonal Porro prism is used as an endoscope and a voltage polarization coupling mode, so that the system compactness and the anti-detuning capability are improved, and the high-energy laser output with high efficiency and high stability is realized.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a satellite-borne high-energy all-solid-state slab laser system.
Background
With the development and improvement of laser technology, the application of all-solid-state lasers pumped by large-energy laser diodes in the fields of industrial processing, laser medical treatment, laser radars, space optics and the like is more and more extensive.
At present, a mopa (master Oscillator Power amplifier) mode is generally adopted for obtaining an all-solid-state high-energy laser with high energy output, in this mode, an Oscillator outputs a Q-switched pulse with high beam quality, but the energy of the Q-switched pulse is low, and an amplification technology is required for further improving the pulse energy. The MOPA structure adopts a high-gain laser amplification system to improve the single-pulse energy of the oscillator, the side pumping slab crystal can effectively reduce the thermally induced wavefront distortion of the crystal relative to the rod crystal, and the cooling surface is large and can efficiently dissipate heat, so that high-efficiency, high-beam-quality and high-energy laser output is obtained. As a mature amplification technology, the side-pumped slab amplifier has compact structure and high efficiency and is widely applied to the field of space-borne space.
At present, in the MOPA system, because the energy of the laser oscillator is generally low, when a laser output with large energy is required, an amplifier stage with high gain is required to amplify the laser output by the oscillator. One or even more stages of amplifiers are used depending on the different choices of target energy. Under the condition of high gain of the amplifier, because of the residual reflection of the plane lens in the optical path, the amplifier and the plane lens thereof form a write resonant cavity to generate self-excitation, the self-excited laser and the output laser are in the same optical path, so that the self-excited light is easily fed back into the oscillator and is further amplified by the oscillator, the oscillator is damaged, and the stability of the oscillator is damaged at the same time; in the case of a multi-stage amplifier structure, a faraday isolator is also required to be added between each stage of amplifier. The complexity of the whole laser system is increased due to the addition of the isolator, the compactness of the whole laser is damaged, and the volume of the laser is increased. Particularly for space lasers with stringent requirements on weight and volume.
Disclosure of Invention
The invention aims to solve the problems of low energy and large volume of a common MOPA laser, provides a satellite-borne large-energy all-solid-state slab laser system, innovatively adopts a PMO-PA (Power Master Oscillator-Power Amplifier) amplification mode to get rid of the use of an isolator, an Oscillator and an Amplifier of the amplification mode adopt the same pumping module, namely, laser crystals with the same size and shape and semiconductor laser diode arrays with the same quantity, and Oscillator laser enters the Amplifier through a coupling system to realize large-energy output; the orthogonal Porro prism is used as an endoscope and a voltage polarization coupling mode, so that the system compactness and the anti-detuning capability are improved, and the high-energy laser output with high efficiency and high stability is realized.
The invention provides a satellite-borne high-energy all-solid-state slab laser system which comprises an oscillator, a coupling system and an amplifier, wherein the oscillator is used for generating laser, the coupling system is used for polarizing and expanding laser beams, and the amplifier is used for amplifying the energy of the coupled laser beams;
the oscillator comprises a first pumping module, the amplifier comprises a second pumping module, and the first pumping module and the second pumping module comprise laser crystals with the same size and shape and semiconductor laser diode arrays with the same number.
The invention relates to a satellite-borne high-energy all-solid-state slab laser system, which is taken as a preferred mode, wherein an oscillator further comprises a first compensating wave plate and a second compensating wave plate which are respectively arranged at two sides of a first pumping module, a first resonant cavity mirror arranged at one side of the first compensating wave plate relative to the first pumping module, a second resonant cavity mirror arranged at one side of the second compensating wave plate relative to the first pumping module, an electro-optic Q-switched crystal arranged between the first pumping module and the second compensating wave plate, a first polarization light splitting device arranged at one side of the electro-optic Q-switched crystal relative to the second compensating wave plate, and a second polarization light splitting device arranged between the first polarization light splitting device and the first pumping module;
the first compensation wave plate is used for compensating depolarization of the first resonant cavity mirror prism, the second compensation wave plate is used for compensating depolarization of the second resonant cavity mirror prism and is matched with the electro-optic Q-switching crystal to output Q-switching pulses, an optical axis output by the first polarization light splitting device and the electro-optic Q-switching crystal forms 45 degrees, the first polarization light splitting device is used for reflecting laser output by the electro-optic Q-switching crystal to a coupling system, the second polarization light splitting device and the first polarization light splitting device are symmetrically arranged, and the second polarization light splitting device is used for improving extinction ratio of oscillation light in the oscillator;
the first resonant cavity mirror and the second resonant cavity mirror are Porro prisms with mutually perpendicular edge lines.
According to the satellite-borne high-energy all-solid-state slab laser system, as a preferable mode, the first pumping module comprises a first laser crystal and a first semiconductor laser diode array which is closely arranged on the same side of the first laser crystal.
According to the satellite-borne high-energy all-solid-state slab laser system, as a preferable mode, the second pumping module comprises a second laser crystal and a second semiconductor laser diode array.
According to the satellite-borne high-energy all-solid-state slab laser system, as an optimal mode, the second semiconductor laser diode arrays are distributed on two sides of the second laser crystal along the total reflection points of the second laser crystal according to the size of the second laser crystal.
According to the satellite-borne high-energy all-solid-state slab laser system, as an optimal mode, the first laser crystal and the second laser crystal are both provided with Brewster angle cutting angles on two end faces and are provided with Si-plated on the front face and the rear faceO2A trapezoidal or parallelogram Nd-YAG lath crystal of the film and the pumping light antireflection film;
the first semiconductor laser diode array and the second semiconductor laser diode array are semiconductor laser diode arrays with the same number.
The invention relates to a satellite-borne high-energy all-solid-state slab laser system, which is characterized in that as an optimal mode, a semiconductor laser diode array is a semiconductor laser diode array with the center wavelength of 808 nm;
the first compensation wave plate and the second compensation wave plate are ultraviolet fused quartz wave plates with the wavelength of 0.57 lambda, and the first compensation wave plate and the second compensation wave plate are zero-order wave plates or true zero-order wave plates or multi-order wave plates;
the first resonant cavity mirror is a Porro prism made of an ultraviolet fused quartz material, and an incident surface of the prism is plated with an oscillation light antireflection film;
the electro-optic Q-switching crystal is a longitudinally modulated electro-optic crystal, and the electro-optic crystal is an RTP crystal or a DKDP crystal;
the first polarization light splitting device and the second polarization light splitting device are both a 45-degree thin film polaroid or a polarization light splitting prism of ultraviolet fused quartz.
The invention relates to a satellite-borne high-energy all-solid-state slab laser system, which is characterized in that as an optimal mode, a coupling system comprises a third polarization light splitting device, a half-wave plate, a beam expanding system and a 45-degree reflector which are sequentially arranged;
the third polarization beam splitter forms a 45-degree angle with the output optical axis of the oscillator, and the third polarization beam splitter is used for reflecting the laser output by the oscillator;
the half-wave plate is used for changing the polarization of the laser reflected by the third polarization beam splitter;
the beam expanding system is used for expanding and collimating the laser output by the half-wave plate;
the 45-degree reflecting mirror is used for reflecting the laser output by the beam expanding system to the amplifier.
According to the satellite-borne high-energy all-solid-state slab laser system, as a preferable mode, the 45-degree reflecting mirror comprises a first 45-degree reflecting mirror and a second 45-degree reflecting mirror, the first 45-degree reflecting mirror forms a 45-degree angle with an output light path of the beam expanding system, and the second 45-degree reflecting mirror forms a 45-degree angle with the output light path of the first 45-degree reflecting mirror.
The invention relates to a satellite-borne high-energy all-solid-state slab laser system, which is characterized in that as a preferred mode, a second polarization beam splitter is an ultraviolet fused quartz 45-degree thin film polaroid or a polarization beam splitter prism;
the half-wave plate is an ultraviolet fused quartz wave plate, and is a zero-order wave plate or a true zero-order wave plate or a multi-order wave plate;
the beam expanding system comprises a plano-concave circular lens, a plano-convex circular lens, a plano-concave cylindrical mirror and a plano-convex cylindrical mirror;
the first 45-degree reflector and the second 45-degree reflector are both ultraviolet fused quartz reflectors plated with oscillating light 45-degree high-reflection films.
The light capable of realizing oscillation in the oscillator is P polarized light, the oscillating light is transmitted in a zigzag mode in an Nd: YAG lath crystal in the oscillator, and the laser diode array is closely arranged on one side of the crystal according to the size of the crystal. The oscillating vibration light formed in the cavity is reflected by the Porro prism of the second resonant cavity mirror and then is changed into S polarized light through the compensating wave plate, the S polarized light passes through the electro-optical Q-switching crystal DKDP crystal, the output of the S polarized light can be obtained at the first polarization light splitting device by adjusting the voltage on the DKDP crystal, and meanwhile, the oscillation of the P polarized light in the oscillator is realized.
The Porro prism ridge lines are orthogonally arranged to improve the detuning resistance of the system and improve the stability of the system;
s polarized light output by the oscillator is reflected by the second polarization beam splitter and then is converted into P polarized light through the half-wave plate, light spots of the P polarized light pass through the beam expanding system to be expanded and collimated, and then the P polarized light passes through the 45-degree reflector to enter the amplifier;
the second laser crystal and the second semiconductor laser diode array of the second pumping module in the amplifier are the same as the first pumping module in the oscillator, P polarized light is transmitted in the second laser crystal in a zigzag mode, the second semiconductor laser diode array is distributed along the total reflection point of the light beam according to the size of the second laser crystal, and the P polarized light extracts energy in the amplifier to achieve amplification output.
The invention has the following advantages:
(1) the invention adopts a mode of adding an amplifier to an oscillator of PMO-PA; in the mode, the oscillator and the amplifier adopt the same pumping modules, the two pumping modules comprise laser crystals with the same size and shape and the same number of semiconductor laser diode arrays, the output capacity of the oscillator is improved on the premise of ensuring the beam quality and the laser efficiency, the gain of the amplifier is reduced on the premise of ensuring the amplification capacity of the amplifier, the influence of self-laser on the oscillator is avoided, Faraday isolators among stages in the system are broken away, and meanwhile, the output of large energy is obtained.
(2) The invention adopts the orthogonal Porro prism as an endoscope and a voltage polarization coupling mode, the orthogonal Porro prism improves the compactness and the detuning resistance of the system, and the orthogonal Porro prism has a voltage-variable polarization coupling output mode and reduces the high voltage of an electro-optic crystal in the system.
Drawings
FIG. 1 is a schematic optical path diagram of an embodiment 1 of a satellite-borne high-energy all-solid-state slab laser system;
fig. 2 is a schematic optical path diagram of embodiment 2 of a satellite-borne high-energy all-solid-state slab laser system.
Reference numerals:
1. an oscillator; 11. a first pumping module; 111. a first laser crystal; 112. a first semiconductor laser diode array; 12. a first compensation wave plate; 13. a second compensation wave plate; 14. a first cavity mirror; 15. a second cavity mirror; 16. an electro-optic Q-switched crystal; 17. a first polarization beam splitter; 18. a second polarization beam splitter; 2. a coupling system; 21. a third polarization beam splitter; 22. a half-wave plate; 23. a beam expanding system; 24. a 45 ° mirror; 241. a first 45 ° mirror; 242. a second 45 ° mirror; 3. an amplifier; 31. a second pumping module; 311. a second laser crystal; 312. a second semiconductor laser diode array; 600. and a penetration test reporting module.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1
As shown in fig. 1, a satellite-borne high-energy all-solid-state slab laser system includes an oscillator 1 for generating laser, a coupling system 2 for polarizing and expanding the laser, and an amplifier 3 for amplifying the energy of the coupled laser, which are sequentially arranged;
the oscillator 1 comprises a first pump module 11, the amplifier 3 comprises a second pump module 31, and the first pump module 11 and the second pump module 31 comprise laser crystals of the same size and shape and the same number of semiconductor laser diode arrays.
Example 2
As shown in fig. 2, a satellite-borne high-energy all-solid-state slab laser system includes an oscillator 1 for generating laser, a coupling system 2 for polarizing and expanding the laser, and an amplifier 3 for amplifying the energy of the coupled laser, which are sequentially arranged;
the oscillator 1 comprises a first pumping module 11, the amplifier 3 comprises a second pumping module 31, and the first pumping module 11 and the second pumping module 31 comprise laser crystals with the same size and shape and semiconductor laser diode arrays with the same number;
the oscillator 1 further includes a first compensation wave plate 12 and a second compensation wave plate 13 respectively disposed at two sides of the first pumping module 11, a first resonator cavity mirror 14 disposed at a side of the first compensation wave plate 12 opposite to the first pumping module 11, a second resonator cavity mirror 15 disposed at a side of the second compensation wave plate 13 opposite to the first pumping module 11, an electro-optical Q-switched crystal 16 disposed between the first pumping module 11 and the second compensation wave plate 13, a first polarization beam splitter 17 disposed at a side of the electro-optical Q-switched crystal 16 opposite to the second compensation wave plate 13, and a second polarization beam splitter 18 disposed between the first polarization beam splitter 17 and the first pumping module 11;
the first compensating wave plate 12 is used for compensating the depolarization of a prism of a first resonant cavity mirror 14, the second compensating wave plate 13 is used for compensating the depolarization of a prism of a second resonant cavity mirror 15 and is matched with an electro-optical Q-switching crystal 16 to output Q-switching pulses, an optical axis output by the electro-optical Q-switching crystal 16 forms 45 degrees with the first polarization light splitting device 17, the first polarization light splitting device 17 is used for reflecting laser output by the electro-optical Q-switching crystal 16 to the coupling system 2, the second polarization light splitting device 18 is symmetrically arranged with the first polarization light splitting device 17, and the second polarization light splitting device 18 is used for improving the extinction ratio of oscillation light in the oscillator 1;
the first pumping module 11 includes a first laser crystal 111 and a first semiconductor laser diode array 112 closely arranged on the same side of the first laser crystal 111;
the semiconductor laser diode array 112 is a semiconductor laser diode array with a center wavelength of 808 nm;
the first compensation wave plate 12 and the second compensation wave plate 13 are ultraviolet fused quartz wave plates with the wavelength of 0.57 lambda, and the first compensation wave plate 12 and the second compensation wave plate 13 are zero-order wave plates or true zero-order wave plates or multi-order wave plates;
the first resonant cavity mirror 14 and the second resonant cavity mirror 15 are Porro prisms with mutually vertical ridge lines; the first resonant cavity mirror 14 is a Porro prism made of an ultraviolet fused quartz material, and an incident surface of the prism is plated with an oscillation light antireflection film;
the electro-optic Q-switched crystal 16 is a longitudinally modulated electro-optic crystal, and the electro-optic crystal is an RTP crystal or a DKDP crystal;
the first polarization beam splitter 17 and the second polarization beam splitter 18 are both a 45-degree thin film polarizer or a polarization beam splitter prism of ultraviolet fused quartz;
the coupling system 2 comprises a third polarization beam splitter 21, a half-wave plate 22, a beam expanding system 23 and a 45-degree reflector 24 which are sequentially arranged;
the third polarization beam splitter 21 forms a 45-degree angle with the output optical axis of the oscillator 1, and the third polarization beam splitter 21 is used for reflecting the laser output by the oscillator 1;
the half-wave plate 22 is used for changing the polarization state of the laser reflected by the third polarization beam splitter 21;
the beam expanding system 23 is used for expanding and collimating the laser output by the half-wave plate 22;
the 45-degree reflector 24 is used for reflecting the laser output by the beam expanding system 23 to the amplifier 3;
the 45 ° reflecting mirror 24 includes a first 45 ° reflecting mirror 241 and a second 45 ° reflecting mirror 242, the first 45 ° reflecting mirror 241 is at an angle of 45 ° with the output optical path of the beam expanding system 23, and the second 45 ° reflecting mirror 242 is at an angle of 45 ° with the output optical path of the first 45 ° reflecting mirror 241;
the third polarization beam splitter 21 is an ultraviolet fused quartz 45-degree thin film polarizer or a polarization beam splitter prism;
the half-wave plate 22 is an ultraviolet fused quartz wave plate, and the half-wave plate 22 is a zero-order wave plate or a true zero-order wave plate or a multi-order wave plate;
the beam expanding system 23 comprises a plano-concave circular lens, a plano-convex circular lens, a plano-concave cylindrical mirror and a plano-convex cylindrical mirror;
the first 45-degree reflector 241 and the second 45-degree reflector 242 are both ultraviolet fused quartz reflectors coated with oscillating light 45-degree high-reflection films.
The second pumping module 31 includes a second laser crystal 311 and a second semiconductor laser diode array 312;
the second semiconductor laser diode array 312 is distributed on two sides of the second laser crystal 311 along the total reflection points of the second laser crystal 311 according to the size of the second laser crystal 311;
the first laser crystal 111 and the second laser crystal 311 are both provided with two end faces Brewster's angle cutting angles and SiO plated on the front and rear faces2A trapezoidal or parallelogram Nd-YAG lath crystal of the film and the pumping light antireflection film;
the first semiconductor laser diode array 112 and the second semiconductor laser diode array 312 are semiconductor laser diode arrays of the same number;
the light capable of realizing oscillation in the oscillator 1 is P-polarized light, the oscillation light propagates in a zigzag shape in the first laser crystal 111 in the oscillator 1, and the first laser diode arrays 112 are closely arranged on the first laser crystal 111 side in accordance with the size of the first laser crystal 111. When the oscillation vibration light formed in the cavity is reflected by the Porro prism of the second resonant cavity mirror 15 and then is converted into S polarized light through the second compensation wave plate 13, the S polarized light passes through the electro-optic Q-switching crystal 16, the output of the S polarized light can be obtained at the first polarization light splitting device 17 by adjusting the voltage on the electro-optic Q-switching crystal 16, and meanwhile, the oscillation of the P polarized light in the oscillator 1 is realized.
The Porro prism ridge lines are orthogonally arranged to improve the detuning resistance of the system and improve the stability of the system;
after being reflected by a third polarization beam splitter 21, the S polarized light output by the oscillator 1 is converted into P polarized light through a half-wave plate 22, and light spots of the P polarized light are expanded and collimated through a beam expanding system 23 and then enter an amplifier 3 through a 45-degree reflector 24;
the second laser crystal 311 and the second semiconductor laser diode array 312 of the second pump module 31 in the amplifier 3 are the same as the first pump module 11 in the oscillator 1, P-polarized light propagates in the second laser crystal 311 of the amplifier 3 in a zigzag manner, the second semiconductor laser diode array 312 is distributed along the total reflection point of the light beam according to the size of the second laser crystal 311, and the P-polarized light extracts energy in the amplifier 3 to realize amplification output.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (10)
1. A satellite-borne high-energy all-solid-state slab laser system is characterized in that: the device comprises an oscillator (1) for generating laser, a coupling system (2) for polarizing and expanding the laser and an amplifier (3) for amplifying the energy of the coupled laser, which are sequentially arranged;
the oscillator (1) comprises a first pumping module (11), the amplifier (3) comprises a second pumping module (31), and the first pumping module (11) and the second pumping module (31) comprise laser crystals with the same size and shape and semiconductor laser diode arrays with the same number.
2. A satellite-borne high-energy all-solid-state slab laser system according to claim 1, characterized in that: the oscillator (1) further comprises a first compensation wave plate (12) and a second compensation wave plate (13) which are respectively arranged at two sides of the first pumping module (11), a first resonant cavity mirror (14) arranged at one side of the first compensation wave plate (12) opposite to the first pumping module (11), and a second resonant cavity mirror (15) arranged at one side of the second compensation wave plate (13) opposite to the first pumping module (11), an electro-optical Q-switching crystal (16) arranged between the first pumping module (11) and the second compensation wave plate (13), a first polarization beam splitting device (17) arranged on one side of the electro-optical Q-switching crystal (16) opposite to the second compensation wave plate (13), and a second polarization beam splitting device (18) arranged between the first polarization beam splitting device (17) and the first pumping module (11);
the first compensation wave plate (12) is used for compensating prism depolarization of the first resonant cavity mirror (14), the second compensation wave plate (13) is used for compensating prism depolarization of the second resonant cavity mirror (15) and is matched with the electro-optic Q-switching crystal (16) to output Q-switching pulses, the optical axis output by the first polarization beam splitter (17) and the electro-optic Q-switching crystal (16) forms 45 degrees, the first polarization beam splitter (17) is used for reflecting the laser output by the electro-optic Q-switching crystal (16) to the coupling system (2), the second polarization beam splitter (18) and the first polarization beam splitter (17) are symmetrically arranged, and the second polarization beam splitter (18) is used for improving the extinction ratio of oscillation light in the oscillator (1);
the first resonant cavity mirror (14) and the second resonant cavity mirror (15) are Porro prisms with edge lines perpendicular to each other.
3. A satellite-borne high-energy all-solid-state slab laser system according to claim 2, characterized in that: the first pump module (11) comprises a first laser crystal (111) and a first array of semiconductor laser diodes (112) closely arranged on the same side of the first laser crystal (111).
4. A satellite-borne high-energy all-solid-state slab laser system according to claim 3, characterized in that: the second pump module (31) comprises a second laser crystal (311) and a second semiconductor laser diode array (312).
5. A satellite-borne high-energy all-solid-state slab laser system according to claim 4, characterized in that: the second semiconductor laser diode array (312) is distributed on two sides of the second laser crystal (311) along the total reflection points of the second laser crystal (311) according to the size of the second laser crystal (311).
6. A satellite-borne high-energy all-solid-state slab laser system according to claim 5, characterized in that: the first laser crystal (111) and the second laser crystal (311) are both provided with two end faces at Brewster's angle cutting angles and are coated with SiO on the front and rear faces2A trapezoidal or parallelogram Nd-YAG lath crystal of the film and the pumping light antireflection film;
the first semiconductor laser diode array (112) and the second semiconductor laser diode array (312) are the same number of semiconductor laser diode arrays.
7. A satellite-borne high-energy all-solid-state slab laser system according to claim 3, characterized in that:
the semiconductor laser diode array (112) is a semiconductor laser diode array with the center wavelength of 808 nm;
the first compensation wave plate (12) and the second compensation wave plate (13) are ultraviolet fused quartz wave plates with the wavelength of 0.57 lambda, and the first compensation wave plate (12) and the second compensation wave plate (13) are zero-order wave plates or true zero-order wave plates or multi-order wave plates;
the first resonant cavity mirror (14) is a Porro prism made of an ultraviolet fused quartz material, and an incident surface of the prism is plated with an oscillation light antireflection film;
the electro-optic Q-switching crystal (16) is a longitudinally modulated electro-optic crystal, and the electro-optic crystal is an RTP crystal or a DKDP crystal;
the first polarization beam splitter (17) and the second polarization beam splitter (18) are both ultraviolet fused quartz 45-degree thin film polarizing plates or polarization beam splitting prisms.
8. A satellite-borne high-energy all-solid-state slab laser system according to claim 1, characterized in that: the coupling system (2) comprises a third polarization light splitting device (21), a half-wave plate (22), a beam expanding system (23) and a 45-degree reflecting mirror (24) which are arranged in sequence;
the third polarization beam splitting device (21) is 45 degrees to the output optical axis of the oscillator (1), and the third polarization beam splitting device (21) is used for reflecting the laser light output by the oscillator (1);
the half-wave plate (22) is used for changing the polarization of the laser light reflected by the third polarization beam splitting device (21);
the beam expanding system (23) is used for expanding and collimating the laser beam output by the half-wave plate (22);
the 45-degree reflector (24) is used for reflecting the laser light output by the beam expanding system (23) to the amplifier (3).
9. A satellite-borne high-energy all-solid-state slab laser system according to claim 8, characterized in that: the 45 ° mirror (24) comprises a first 45 ° mirror (241) and a second 45 ° mirror (242), the first 45 ° mirror (241) being at 45 ° to the output optical path of the beam expanding system (23), the second 45 ° mirror (242) being at 45 ° to the output optical path of the first 45 ° mirror (241).
10. A satellite-borne high-energy all-solid-state slab laser system according to claim 9, characterized in that:
the third polarization beam splitter (21) is an ultraviolet fused quartz 45-degree thin film polaroid or a polarization beam splitter prism;
the half-wave plate (22) is an ultraviolet fused quartz wave plate, and the half-wave plate (22) is a zero-order wave plate or a true zero-order wave plate or a multi-stage wave plate;
the beam expanding system (23) comprises a plano-concave circular lens, a plano-convex circular lens, a plano-concave cylindrical mirror and a plano-convex cylindrical mirror;
the first 45-degree reflector (241) and the second 45-degree reflector (242) are both ultraviolet fused quartz reflectors plated with oscillating light high-reflection films of 45 degrees.
Priority Applications (1)
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|---|---|---|---|
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| CN114024199A (en) * | 2021-10-20 | 2022-02-08 | 浙江大立科技股份有限公司 | Laser amplifier light path |
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