CN112631073A - Heat-conducting photoresist and application thereof - Google Patents
Heat-conducting photoresist and application thereof Download PDFInfo
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- CN112631073A CN112631073A CN202011598871.XA CN202011598871A CN112631073A CN 112631073 A CN112631073 A CN 112631073A CN 202011598871 A CN202011598871 A CN 202011598871A CN 112631073 A CN112631073 A CN 112631073A
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- Prior art keywords
- photoresist
- heat
- conducting
- filler
- thermally conductive
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 72
- 239000000945 filler Substances 0.000 claims abstract description 27
- 239000011347 resin Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims description 22
- 239000011231 conductive filler Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000003575 carbonaceous material Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 3
- -1 azidoquinone compound Chemical class 0.000 claims description 3
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 229940070765 laurate Drugs 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006852 SnOy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000002931 mesocarbon microbead Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910021384 soft carbon Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a heat-conducting photoresist, wherein a submicron heat-conducting filler is added into a resin photoresist sensitive to ultraviolet light to form the heat-conducting photoresist; the heat-conducting filler is directly mixed with the resin photoresist according to a set mass ratio and uniformly dispersed without pretreatment. The heat-conducting photoresist is applied among LED pixel points on the display device. The heat-conducting photoresist is beneficial to improving the heat dissipation effect of the display device, and further improving the performance and the service life of the display device.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a heat-conducting photoresist and application thereof.
Background
Photoresist is a common material used for pixel pit patterning in the display field. However, the poor thermal conductivity of the photoresist itself causes the LED device to generate a significant amount of heat in a small local area during operation. As the operating temperature of these LEDs increases, the expected performance and lifetime of the LEDs may decrease due to high temperature effects.
At present, commercial display devices generally adopt heat conduction packaging adhesive to assist the heat dissipation of devices in a packaging part, but most of LED device structures are organic polymers which are not heat-conducting, and heat conduction packaging adhesive which can not effectively transfer heat to the outside can not be used.
Disclosure of Invention
The invention aims to provide a heat-conducting photoresist and application thereof, wherein the heat-conducting photoresist is beneficial to improving the heat dissipation effect of a display device, and further improving the performance and the service life of the display device.
In order to achieve the purpose, the invention adopts the technical scheme that: a heat-conducting photoresist is characterized in that a submicron heat-conducting filler is added into a resin photoresist sensitive to ultraviolet light to form a heat-conducting photoresist; the heat-conducting filler is directly mixed with the resin photoresist according to a set mass ratio and uniformly dispersed without pretreatment.
Further, the resin photoresist is at least one of polyvinyl alcohol laurate photoresist, alkene monomer photoresist and azidoquinone compound photoresist; the heat conducting filler is at least one of metal, metal oxide, carbon material, nitride, carbide and silicon material.
Further, the heat-conducting filler accounts for 20-75% of the heat-conducting photoresist by mass.
Furthermore, the heat conductivity coefficient of the heat-conducting filler is 20W/Mk-600W/Mk.
Further, the particle size of the heat-conducting filler particles used for forming the heat-conducting filler is 1 nm-1 μm.
Furthermore, the heat-conducting filler simultaneously contains heat-conducting filler particles with the particle size of more than or equal to 1nm and less than 100nm and heat-conducting filler particles with the particle size of more than or equal to 100nm and less than or equal to 1 mu m.
Furthermore, the viscosity of the heat-conducting photoresist is 100-1000 CPs, and the heat-conducting coefficient is 0.1-100W/Mk.
Further, the heat-conducting photoresist is applied among LED pixel points on the display device.
Further, a TFT drive module is arranged on a transparent glass substrate of the display device, the heat-conducting photoresist is sprayed or blade-coated on the TFT drive module in a large area, a sub-pixel template is formed after exposure and development, and then ink-jet printing, and an LED structure is evaporated and plated to obtain the pixilated heat-conducting photoresist and LED pixel points.
Further, the LED structure is any one of an LED structure, a mu LED structure, an OLED structure and a QLED structure.
Compared with the prior art, the invention has the following beneficial effects:
1. the heat conducting filler is added into the photoresist, so that the photoresist has good heat conducting performance, heat generated by the work of the LED is quickly transferred to the photoresist beside the LED and is transferred to the outside of a device to finish heat dissipation, an organic polymer in an LED structure is protected, the service performance of the device is improved, and the service life of the device is prolonged.
2. The heat-conducting photoresist can realize the glue distribution of large-area display devices by adopting blade coating and spraying processes, has strong initial viscosity, high production efficiency and continuous mass production process, and can meet the requirement of mass production process.
Drawings
Fig. 1 is a side view of a structure in which a thermally conductive photoresist according to an embodiment of the present invention is applied to a display device.
Fig. 2 is a top view of a structure in which the thermally conductive photoresist of the embodiment of the invention is applied to a display device.
Detailed Description
The invention is described in further detail below with reference to the figures and the embodiments.
The invention provides a heat-conducting photoresist, wherein a submicron-grade heat-conducting filler is added into a common ultraviolet-sensitive resin photoresist to form the heat-conducting photoresist. The heat-conducting filler is directly mixed with resin photoresist according to a set mass ratio without pretreatment, is intensively stirred and is uniformly dispersed, and the heat-conducting filler has no influence on the physical and chemical properties of the photoresist.
The resin photoresist is at least one of polyvinyl alcohol laurate photoresist, alkene monomer photoresist and azidoquinone compound photoresist.
The heat conducting filler is at least one of metal, metal oxide, carbon material, nitride, carbide and silicon material. Preferably, the metal is a metal powder, and at least one of silver, copper or tin is adopted, and silver is preferred; the metal oxide is aluminum oxide, magnesium oxide, zinc oxide, titanium oxide or SnOyAt least one of (1), wherein 0<y<3; the carbon material is at least one of hard carbon, soft carbon, mesocarbon microbeads, carbon nanotubes, graphite and graphene; the nitride is at least one of silicon nitride, aluminum nitride, boron nitride and titanium nitride, and the carbide is at least one of silicon carbide and tungsten carbide; the silicon material adopts Si and SiOxAt least one of (1), wherein 0<x<3。
In this embodiment, the mass percentage of the heat conductive filler in the heat conductive photoresist is 20% to 75%. If the amount of the additive is too large, the adhesive property is deviated, and if the amount of the additive is too small, the heat conduction effect cannot be remarkably improved.
If the heat conduction filler with the heat conduction coefficient of 25-500W/mK is adopted, the mass percentage of the heat conduction filler in the heat conduction photoresist is preferably 20-70%. If the heat conduction filler with the heat conduction coefficient of 1000-5000W/mK is adopted, the mass percentage of the heat conduction filler in the heat conduction photoresist is preferably 1-10%.
The heat conductivity coefficient of the heat conductive filler is 1W/mK to 10000W/mK (25 ℃), preferably 20 to 600W/mK (25 ℃), and more preferably 20 to 100W/mK (25 ℃).
The median particle diameter of the heat-conducting filler particles used for forming the heat-conducting filler is 1 nm-1 mu m. If the particle diameter is too large, the filling degree of the heat-conducting filler is insufficient, the heat conductivity is not high, and the processability is deviated when the particle diameter is too small.
Preferably, the heat conductive filler contains both heat conductive filler particles having a particle diameter of 1nm or more and less than 100nm and heat conductive filler particles having a particle diameter of 100nm or more and 1 μm or less. The selection of particles with various particle sizes can improve the filling amount and the heat conduction effect.
The viscosity of the heat-conducting photoresist is 100-1000 CPs, and the heat conductivity coefficient is 0.1-100W/Mk.
The heat-conducting photoresist is applied among LED pixel points on a display device. As shown in the figures 1-2 of the drawings,
the display device comprises a transparent glass substrate 4, a TFT drive module 2, a pixelated heat-conducting photoresist 3 and an LED device 1. Wherein the LED device 1 comprises a lower electrode 101, a hole injection layer 102, a light emitting material 103, a hole transport layer 104 and an upper electrode 105. When the TFT drives the LED device to emit light, the generated heat is transferred through the heat-conducting photoresist to dissipate the heat. The manufacturing method comprises the following steps: the transparent glass substrate 4 is provided with the TFT driving module 2, the TFT driving module 2 is sprayed or blade-coated with the heat-conducting photoresist 3 in a large area, a sub-pixel template is formed after exposure and development, and then the LED structure is subjected to ink-jet printing and evaporation coating to obtain the pixilated heat-conducting photoresist 3 and the LED pixel points 4. The LED structure is any one of an LED structure, a mu LED structure, an OLED structure and a QLED structure.
The preferred embodiments provided herein are further illustrative only, and should not be taken as limiting the scope of the invention as defined by the appended claims, and are to be construed as being without limitation thereto, since numerous insubstantial modifications and adaptations of the invention will now occur to those skilled in the art based on the foregoing disclosure.
Claims (10)
1. A heat-conducting photoresist is characterized in that submicron heat-conducting filler is added into a resin photoresist sensitive to ultraviolet light to form the heat-conducting photoresist; the heat-conducting filler is directly mixed with the resin photoresist according to a set mass ratio and uniformly dispersed without pretreatment.
2. The heat-conducting photoresist according to claim 1, wherein the resin photoresist is at least one of a polyvinyl alcohol laurate photoresist, an alkene monomer photoresist and an azidoquinone compound photoresist; the heat conducting filler is at least one of metal, metal oxide, carbon material, nitride, carbide and silicon material.
3. The heat conductive photoresist of claim 1, wherein the heat conductive filler accounts for 20% to 75% by mass of the heat conductive photoresist.
4. The photoresist of claim 1, wherein the thermal conductivity of the thermal conductive filler is 20W/Mk to 600W/Mk.
5. The photoresist of claim 1, wherein the particles of the thermally conductive filler used to form the thermally conductive filler have a particle size of 1nm to 1 μm.
6. The photoresist of claim 5, wherein the thermally conductive filler contains both thermally conductive filler particles with a particle size of 1nm or more and less than 100nm and thermally conductive filler particles with a particle size of 100nm or more and 1 μm or less.
7. The thermal conductive photoresist of claim 1, wherein the viscosity of the thermal conductive photoresist is 100 to 1000CPs, and the thermal conductivity is 0.1 to 100W/Mk.
8. The use of a thermally conductive photoresist according to any of claims 1-7, wherein the thermally conductive photoresist is used between LED pixels on a display device.
9. The application of the heat-conducting photoresist according to claim 8, wherein a TFT drive module is arranged on a transparent glass substrate of the display device, the heat-conducting photoresist is sprayed or blade-coated on the TFT drive module in a large area, a sub-pixel template is formed after exposure and development, and then ink-jet printing, evaporation and plating of an LED structure are carried out to obtain the pixilated heat-conducting photoresist and LED pixel points.
10. The use of a thermally conductive photoresist according to claim 9, wherein the LED structure is any one of LED structure, μ LED structure, OLED structure, and QLED structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011598871.XA CN112631073A (en) | 2020-12-30 | 2020-12-30 | Heat-conducting photoresist and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011598871.XA CN112631073A (en) | 2020-12-30 | 2020-12-30 | Heat-conducting photoresist and application thereof |
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| Publication Number | Publication Date |
|---|---|
| CN112631073A true CN112631073A (en) | 2021-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011598871.XA Pending CN112631073A (en) | 2020-12-30 | 2020-12-30 | Heat-conducting photoresist and application thereof |
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| Country | Link |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006337481A (en) * | 2005-05-31 | 2006-12-14 | Taiyo Ink Mfg Ltd | Curable resin composition and cured object thereof |
| CN105070650A (en) * | 2015-08-14 | 2015-11-18 | Tcl集团股份有限公司 | Preparation method for trapezoid pixel Bank structure and OLED device |
| CN105070651A (en) * | 2015-08-17 | 2015-11-18 | Tcl集团股份有限公司 | Method for manufacturing pixel defining layer structure and OLED device |
| CN105670550A (en) * | 2016-03-31 | 2016-06-15 | 东莞新能源科技有限公司 | Heat-conducting adhesive and secondary battery containing heat-conducting adhesive |
| CN106164206A (en) * | 2014-03-27 | 2016-11-23 | 3M创新有限公司 | The compositions comprising polydiorganosiloxanepolyurea filled and using method thereof |
| CN109212904A (en) * | 2017-06-30 | 2019-01-15 | 律胜科技股份有限公司 | Heat-conductive photosensitive resin |
| CN112004887A (en) * | 2018-04-20 | 2020-11-27 | 富士胶片株式会社 | Heat conductive layer, photosensitive composition, method for producing heat conductive layer, laminate, and semiconductor device |
-
2020
- 2020-12-30 CN CN202011598871.XA patent/CN112631073A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006337481A (en) * | 2005-05-31 | 2006-12-14 | Taiyo Ink Mfg Ltd | Curable resin composition and cured object thereof |
| CN106164206A (en) * | 2014-03-27 | 2016-11-23 | 3M创新有限公司 | The compositions comprising polydiorganosiloxanepolyurea filled and using method thereof |
| CN105070650A (en) * | 2015-08-14 | 2015-11-18 | Tcl集团股份有限公司 | Preparation method for trapezoid pixel Bank structure and OLED device |
| CN105070651A (en) * | 2015-08-17 | 2015-11-18 | Tcl集团股份有限公司 | Method for manufacturing pixel defining layer structure and OLED device |
| CN105670550A (en) * | 2016-03-31 | 2016-06-15 | 东莞新能源科技有限公司 | Heat-conducting adhesive and secondary battery containing heat-conducting adhesive |
| CN109212904A (en) * | 2017-06-30 | 2019-01-15 | 律胜科技股份有限公司 | Heat-conductive photosensitive resin |
| CN112004887A (en) * | 2018-04-20 | 2020-11-27 | 富士胶片株式会社 | Heat conductive layer, photosensitive composition, method for producing heat conductive layer, laminate, and semiconductor device |
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Application publication date: 20210409 |
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