CN112629660A - Novel Fabry-Perot tunable filter - Google Patents
Novel Fabry-Perot tunable filter Download PDFInfo
- Publication number
- CN112629660A CN112629660A CN202011469525.1A CN202011469525A CN112629660A CN 112629660 A CN112629660 A CN 112629660A CN 202011469525 A CN202011469525 A CN 202011469525A CN 112629660 A CN112629660 A CN 112629660A
- Authority
- CN
- China
- Prior art keywords
- film
- silicon
- layer
- sio
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 238000001228 spectrum Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000002207 thermal evaporation Methods 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 43
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000001914 filtration Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N germanium monoxide Inorganic materials [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 abstract 1
- 238000000059 patterning Methods 0.000 description 12
- 238000005137 deposition process Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
The invention belongs to the field of infrared detection, and relates to a novel Fabry-Perot tunable filter. Monocrystalline silicon is adopted as a substrate, and a reflecting layer formed by alternately depositing a metal electrode and germanium/silicon monoxide is plated on the upper part of the substrate; the lower part of the substrate is plated with an anti-reflection layer formed by a silicon monoxide film. Meanwhile, monocrystalline silicon is used as a movable thin layer, and an anti-reflection layer formed by a silicon monoxide thin film is plated on the upper part of the movable thin layer; the reflecting layer formed by alternatively depositing Ge/SiO is plated on the lower part of the movable film. A double-folding cantilever beam structure is adopted, and a rectangular groove is formed by etching the cantilever beam, so that low-voltage driving can be well met, the mirror surface is flat, and good filtering characteristics are always kept in a tunable range. And the air cavity is used as a tuning cavity, the depth of the cavity is 2.5 microns, and spectrum selective transmission of a 3-5 micron wave band can be realized.
Description
Technical Field
The invention belongs to the field of infrared detection, and relates to a novel Fabry-Perot tunable filter which adopts a double-folded cantilever beam structure and etches the cantilever beam to form a rectangular groove.
Background
Infrared spectroscopy is a powerful analytical tool because many substances can be reliably distinguished by their unique absorption spectra. The traditional infrared spectrometer has the disadvantages of complex structure, high price and limited portability. There is a strong need for compact, reliable and portable spectrometers for medical diagnostics and healthcare (e.g. detection of gases in human breath), detection of hazardous materials (e.g. combustible and toxic gases, detection of explosives), process monitoring in the pharmaceutical and chemical industries, and the like. Therefore, the micro tunable infrared spectrometer is always a hot spot for scientific research and market demand.
Fabry-Perot tunable filters are an important component of miniature tunable infrared spectrometers. The fabry-perot filter based on MEMS technology can maintain a sufficiently large transmittance while being highly miniaturized. Many designs have been reported that employ electrostatically actuated MEMS fabry-perot filters. Meanwhile, the Fabry-Perot filter based on the MEMS technology has the problems that the filter performance is influenced due to large driving voltage, small tunable range and large deformation.
Disclosure of Invention
The invention aims to provide a novel Fabry-Perot tunable filter, which adopts monocrystalline silicon as a substrate, and a reflecting layer formed by alternately depositing metal electrodes and germanium (Ge)/silicon monoxide (SiO) is plated on the upper part of the substrate; the lower part of the substrate is plated with an anti-reflection layer formed by a silicon monoxide (SiO) film. Meanwhile, monocrystalline silicon is adopted as a movable thin layer, and an anti-reflection layer formed by a silicon monoxide (SiO) thin film is plated on the upper part of the movable thin layer; the lower part of the movable film is plated with a reflecting layer formed by alternately depositing germanium (Ge)/silicon monoxide (SiO).
The technical scheme of the invention is as follows: a novel Fabry-Perot tunable filter comprises three parts. The first part is a substrate, the second part is a movable thin layer, and the third part is a tuning cavity.
The first part of the substrate is monocrystalline silicon. Plating a metal electrode on the upper surface of the silicon substrate; the metal electrode is a gold layer and is prepared by a magnetron sputtering method. A reflecting layer formed by alternate deposition of germanium (Ge)/silicon monoxide (SiO) is plated on the upper surface of the silicon substrate; the reflecting layer film system structure is Sub/LHLH, Sub represents a silicon substrate, H and L represent an 1/4 center wavelength optical thickness of film Ge (high refractive index material layer) and film SiO (low refractive index material layer), respectively, with a center wavelength λ 4260nm and 1H (4 n)Hd)/λ；1L＝(4nLd) And lambda, the film layers are prepared by adopting a vacuum thermal evaporation method. Plating an anti-reflection layer formed by a silicon monoxide (SiO) film on the lower surface of the silicon substrate; the silicon monoxide (SiO) film is prepared by a vacuum thermal evaporation method, the thickness is 1/4 central wavelength optical thickness, and the central wavelength lambda is 4260 nm.
The second movable thin layer is monocrystalline silicon and is 3 microns thick. Plating an anti-reflection layer consisting of a silicon monoxide (SiO) film on the upper surface of the movable silicon film, wherein the thickness is 1/4 central wavelength optical thickness, and the central wavelength lambda is 4260 nm; the silicon monoxide (SiO) film is prepared by a vacuum thermal evaporation method. A reflecting layer formed by alternate deposition of germanium (Ge)/silicon monoxide (SiO) is plated on the lower surface of the movable silicon film; the reflecting layer film system structure is Sub/LHLH, Sub represents a silicon substrate, H and L respectively represent 1/4 central wavelength optical thicknesses of film Ge (high refractive index material layer) and film SiO (low refractive index material layer), the central wavelength lambda is 4260nm, and 1H is (4 n)Hd)/λ；1L＝(4nLd) And lambda, the film layers are prepared by adopting a vacuum thermal evaporation method.
The second movable thin layer adopts a double-folded cantilever beam structure, and the cantilever beam is etched to form a rectangular groove.
And the third part of tuning cavity is an air cavity and is positioned between the substrate and the movable thin layer. The depth of the air cavity is 2.5 microns, the air cavity is determined by optical design and is prepared by a welding bonding process, and spectrum selective transmission of a wave band of 3-5 microns can be realized.
The movable silicon thin layer of the novel Fabry-Perot tunable filter adopts a double-folded cantilever beam structure, and the cantilever beam is etched to form a rectangular groove, so that low-voltage driving can be well met, the mirror surface is flat, and good filtering characteristics are always kept in a tunable range. And the air cavity is used as a tuning cavity, the depth of the cavity is 2.5 microns, and spectrum selective transmission of a 3-5 micron wave band can be realized.
Drawings
Fig. 1 is a structural diagram of a novel fabry-perot tunable filter.
Fig. 2 is a structure diagram of a double-folded cantilever beam and a displacement diagram under a driving voltage of 8V.
Detailed Description
The principles and features of this invention are described below in conjunction with examples which are set forth to illustrate, but are not to be construed to limit the scope of the invention.
Example 1
The novel Fabry-Perot tunable filter disclosed by the embodiment 1 of the invention adopts a double-folded cantilever beam structure, a rectangular groove is formed by etching the cantilever beam, and the movable thin layer is a movable thin layer which is applied with voltage during working to generate electrostatic attraction and moves up and down under the action of the electrostatic attraction. The novel Fabry-Perot tunable filter with the structure can obtain the displacement of 0.88 mu m under the voltage of 8V, and simultaneously, the maximum stress of the novel Fabry-Perot tunable filter is only 8.49MPa when the displacement is 0.5 mu m, and the mirror flatness error is only 0.9 nm. Therefore, the novel Fabry-Perot filter with the rectangular groove cantilever beam can well meet low-voltage driving, the mirror surface is flat, and good filtering characteristics are always kept in a tunable range.
Preparation example 1
The preparation process of the novel Fabry-Perot tunable filter comprises the following steps:
step 1: depositing a film system with alternately stacked Sub/LHLH 6 layers on the upper surface of the monocrystalline silicon substrate by adopting a vacuum thermal evaporation film deposition process to form a reflecting layer, and patterning by utilizing an etching process. H and L represent the central wavelength optical thickness of 1/4, with a central wavelength λ 4260nm and 1H (4 n) of film Ge (high index material) and film SiO (low index material), respectivelyHd)/λ；1L＝(4nLd)/λ。
Step 2: a gold (Au) layer is deposited on a monocrystalline silicon substrate plated with a reflecting layer by adopting a magnetron sputtering deposition process and is used as an electrode for electrostatic attraction, the thickness is 300nm, and patterning is carried out by utilizing an etching process.
And step 3: depositing a SiO film on the lower surface of the silicon substrate by adopting a vacuum thermal evaporation film deposition process to form an anti-reflection layer, wherein the thickness is 1/4 central wavelength optical thickness, and the central wavelength lambda is 4260nm, and patterning by utilizing an etching process.
And 4, step 4: depositing a SiO film on the upper surface of the movable monocrystalline silicon thin layer by adopting a vacuum thermal evaporation film deposition process to form an antireflection layer, wherein the thickness is 1/4 central wavelength optical thickness, and the central wavelength lambda is 4260nm, and patterning by utilizing an etching process.
And 5: and depositing a film system with alternately stacked Sub/LHLH 6 layers by adopting a vacuum thermal evaporation film deposition process on the lower surface of the movable monocrystalline silicon thin layer to form a reflecting layer, and patterning by utilizing an etching process. H and L represent the central wavelength optical thickness of 1/4, with a central wavelength λ 4260nm and 1H (4 n) of film Ge (high index material) and film SiO (low index material), respectivelyHd)/λ；1L＝(4nLd)/λ。
Step 6: and carrying out wet etching and dry etching on the movable thin layer of the monocrystalline silicon to form a double-folded cantilever beam structure, wherein a rectangular groove is etched on the cantilever beam, the length of the groove is 5 micrometers, the width of the groove is 1 micrometer, and the depth of the groove is 1 micrometer.
And 7: and the monocrystalline silicon substrate and the monocrystalline silicon movable thin layer are welded into a whole by utilizing bonding processes such as eutectic welding and the like, and a gap (air cavity) is controlled to be 2.5 microns.
Preparation example 2
The preparation process of the novel Fabry-Perot tunable filter comprises the following steps:
step 1: depositing a SiO film on the lower surface of the monocrystalline silicon substrate by adopting a vacuum thermal evaporation film deposition process to form an antireflection layer, wherein the thickness is 1/4 central wavelength optical thickness, and the central wavelength lambda is 4260nm, and patterning by utilizing an etching process.
Step 2: depositing a film system with alternately stacked Sub/LHLH 6 layers on the upper surface of the monocrystalline silicon substrate by adopting a vacuum thermal evaporation film deposition process to form a reflecting layer, and patterning by utilizing an etching process. H and L represent the central wavelength optical thickness of 1/4, with a central wavelength λ 4260nm and 1H (4 n) of film Ge (high index material) and film SiO (low index material), respectivelyHd)/λ；1L＝(4nLd)/λ。
And step 3: in an electrode working area on the upper surface of a monocrystalline silicon substrate plated with a reflecting layer, a gold (Au) layer is deposited as an electrode for electrostatic attraction by adopting a magnetron sputtering film deposition process, the thickness of the Au layer is 300nm, and patterning is carried out by utilizing an etching process.
And 4, step 4: a layer of amorphous silicon with the thickness of 2.5 microns is deposited on the upper surface of a monocrystalline silicon substrate plated with a reflecting layer and a metal electrode by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method to be used as a sacrificial layer, and patterning is carried out by an etching process (a double-folded cantilever beam structure is formed, and a rectangular groove is etched on a cantilever beam).
And 5: on a monocrystalline silicon substrate plated with a sacrificial layer, a film system formed by alternately stacking Sub/LHLH 6 layers is deposited by adopting a vacuum thermal evaporation film deposition process to form a reflecting layer, and patterning is carried out by utilizing an etching process. H and L represent the central wavelength optical thickness of 1/4, with a central wavelength λ 4260nm and 1H (4 n) of film Ge (high index material) and film SiO (low index material), respectivelyHd)/λ；1L＝(4nLd)/λ。
Step 6: and preparing a layer of monocrystalline silicon on the reflecting layer by adopting a molecular beam epitaxy method, wherein the thickness of the monocrystalline silicon is 3 mu m, and patterning by utilizing an etching process.
And 7: on the monocrystalline silicon prepared by the molecular beam epitaxy method, a SiO film is deposited by adopting a vacuum thermal evaporation film deposition process to form an antireflection layer, the thickness of the antireflection layer is 1/4, the central wavelength optical thickness is 4260nm, and patterning is carried out by utilizing an etching process.
And 8: and etching the polycrystalline silicon serving as the sacrificial layer by adopting a dry etching process to form a tunable air cavity with the cavity depth of 2.5 microns.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (6)
1. A novel Fabry-Perot tunable filter is characterized by comprising three major parts, wherein the first part is a substrate, the second part is a movable thin layer, and the third part is a tuning cavity;
the first part of the substrate is monocrystalline silicon; plating a metal electrode on the upper surface of the silicon substrate; a reflecting layer formed by alternate deposition of germanium (Ge)/silicon monoxide (SiO) is plated on the upper surface of the silicon substrate; plating an anti-reflection layer formed by a silicon monoxide (SiO) film on the lower surface of the silicon substrate;
the second part movable thin layer is monocrystalline silicon; plating an anti-reflection layer consisting of a silicon monoxide (SiO) film on the upper surface of the movable silicon film; a reflecting layer formed by alternate deposition of germanium (Ge)/silicon monoxide (SiO) is plated on the lower surface of the movable silicon film;
the second part of movable thin layer adopts a double-folded cantilever beam structure, and the cantilever beam is etched to form a rectangular groove;
and the third part of tuning cavity is an air cavity and is positioned between the substrate and the movable thin layer.
2. A novel fabry-perot tunable filter as claimed in claim 1, wherein said metal electrode is a gold layer and is fabricated by magnetron sputtering.
3. A novel fabry-perot tunable filter as claimed in claim 1, wherein said reflective layer is of the structure Sub/lhlh, Sub represents a silicon substrate, H and L represent a central wavelength optical thickness of 1/4 of film Ge (high refractive index material layer) and film SiO (low refractive index material layer), respectively, with a central wavelength λ being 4260nm, 1H being (4nHd)/λ; the film layers were all prepared by vacuum thermal evaporation, with 1L ═ 4nLd)/λ.
4. A novel fabry-perot tunable filter as claimed in claim 1, wherein said anti-reflection layer of silicon monoxide (SiO) film is prepared by vacuum thermal evaporation method, and has a thickness of 1/4 central wavelength optical thickness, and central wavelength λ is 4260 nm.
5. A novel fabry-perot tunable filter as claimed in claim 1, wherein said second portion is a thin movable layer having a thickness of 3 μm; rectangular groove, the groove length is 5 μm, the groove width is 1 μm, the groove depth is 1 μm.
6. The tunable fabry-perot filter of claim 1, wherein the depth of the air cavity is 2.5 μm, and the filter is prepared by a solder bonding process or by etching a sacrificial layer on a single-crystal silicon substrate by a dry etching process, so that the selective transmission of the spectrum in the 3-5 μm band can be realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011469525.1A CN112629660A (en) | 2020-12-15 | 2020-12-15 | Novel Fabry-Perot tunable filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011469525.1A CN112629660A (en) | 2020-12-15 | 2020-12-15 | Novel Fabry-Perot tunable filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112629660A true CN112629660A (en) | 2021-04-09 |
Family
ID=75312734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011469525.1A Pending CN112629660A (en) | 2020-12-15 | 2020-12-15 | Novel Fabry-Perot tunable filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112629660A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114582991A (en) * | 2022-02-22 | 2022-06-03 | 南京信息工程大学 | Quantum dot integrated miniature ultraviolet spectrum sensing chip and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070242920A1 (en) * | 2006-04-18 | 2007-10-18 | Xerox Corporation | Fabry-Perot tunable filter using a bonded pair of transparent substrates |
| US20080049228A1 (en) * | 2006-08-28 | 2008-02-28 | Novaspectra, Inc. | Fabry-perot interferometer array |
| CN103293660A (en) * | 2013-05-31 | 2013-09-11 | 华中科技大学 | Miniature F-P (Fabry-Perot) cavity tunable filter and method for manufacturing same |
-
2020
- 2020-12-15 CN CN202011469525.1A patent/CN112629660A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070242920A1 (en) * | 2006-04-18 | 2007-10-18 | Xerox Corporation | Fabry-Perot tunable filter using a bonded pair of transparent substrates |
| US20080049228A1 (en) * | 2006-08-28 | 2008-02-28 | Novaspectra, Inc. | Fabry-perot interferometer array |
| CN103293660A (en) * | 2013-05-31 | 2013-09-11 | 华中科技大学 | Miniature F-P (Fabry-Perot) cavity tunable filter and method for manufacturing same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114582991A (en) * | 2022-02-22 | 2022-06-03 | 南京信息工程大学 | Quantum dot integrated miniature ultraviolet spectrum sensing chip and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4578587B2 (en) | Integrated tunable Fabry-Perot interferometer | |
| KR101168353B1 (en) | Thin film precursor stack for mems manufacturing | |
| CN106133563A (en) | The MEMS fp filter of tunable wave length | |
| TWI287123B (en) | Optical tunable filter and method for manufacturing the optical tunable filter | |
| CN104597550B (en) | A kind of preparation method of linear variable filter intermediate wedge resonant cavity layer | |
| CN110850587B (en) | MEMS Fabry-Perot cavity with adjustable cavity length | |
| KR20050053512A (en) | Optical tunable filter and method for manufacturing the same | |
| TWI308647B (en) | Guided-mode resonator and the method for manufacturing the same | |
| US11391629B2 (en) | Interferometer and method for producing an interferometer | |
| CN112629660A (en) | Novel Fabry-Perot tunable filter | |
| WO2020243341A2 (en) | Integrated device for fluid analysis | |
| Lee et al. | A 1-V operated MEMS variable optical attenuator using piezoelectric PZT thin-film actuators | |
| CN109298504B (en) | Microcomputer electrooptical wavelength reference standard tool | |
| US20140198388A1 (en) | Fabry-perot device with a movable mirror | |
| US7786653B2 (en) | MEMS piezoelectric switch | |
| JP2005031326A (en) | Optical filter | |
| US20100315647A1 (en) | System, Method and Apparatus for a Micromachined Interferometer Using Optical Splitting | |
| CN108919478A (en) | A kind of tunable F-P optical filter and preparation method thereof | |
| WO2021077396A1 (en) | Tunable optical filtering device | |
| EP4071546A1 (en) | Tunable optical filter device | |
| Kurth et al. | Tunable Fabry-Perot interferometer for 3-to 4.5-um wavelength with bulk micromachined reflector carrier | |
| CN113735053A (en) | Micro-electromechanical infrared sensor and preparation method thereof | |
| EP4092470A1 (en) | Adjustable infrared optical filter device | |
| Liao et al. | Design and fabrication of large-area tunable MOEMS-based shortwave infrared Fabry-Pérot filters | |
| JP4479351B2 (en) | Wavelength tunable filter and method of manufacturing wavelength tunable filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210409 |