CN112626464B - Preparation device of gallium nitride film - Google Patents
Preparation device of gallium nitride film Download PDFInfo
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- CN112626464B CN112626464B CN202011419636.1A CN202011419636A CN112626464B CN 112626464 B CN112626464 B CN 112626464B CN 202011419636 A CN202011419636 A CN 202011419636A CN 112626464 B CN112626464 B CN 112626464B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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Abstract
The invention discloses a preparation device of a gallium nitride film, and particularly relates to the technical field of preparation of the gallium nitride film. According to the invention, the cavity, the shell, the connecting rod, the nut, the through hole and the heat-insulation rock wool are arranged, when the gallium nitride film preparation device is used, the shell is fixed outside the preparation bin through the nut and the through hole, a cavity is formed between the preparation bin and the shell at the moment, then the heat-insulation rock wool is filled in the cavity, and the heat insulation performance of the heat-insulation rock wool is utilized, so that the phenomenon that the heat in the preparation bin is quickly lost can be avoided, the temperature in the preparation bin can be kept stable, and the quality of gallium nitride film preparation is improved.
Description
Technical Field
The invention relates to the technical field of gallium nitride film preparation, in particular to a preparation device of a gallium nitride film.
Background
The gallium nitride film is a compound of nitrogen and gallium and is a semiconductor material with a direct energy gap, and the preparation method of the gallium nitride film by the ionized cluster beam deposition film method is the simplest and most practical preparation method of the gallium nitride film, but the existing preparation device of the gallium nitride film has many problems and defects, so that a novel preparation device of the gallium nitride film is needed.
In the process of implementing the invention, the inventor finds that at least the following problems in the prior art are not solved:
(1) the traditional gallium nitride film preparation device is inconvenient for fixing film sample holders with different sizes, and has poor applicability;
(2) the traditional preparation device of the gallium nitride film has poor heat insulation performance, so that the internal temperature is unstable, and the preparation quality of the gallium nitride film is reduced;
(3) the traditional gallium nitride film preparation device has no explosion-proof function, and has poor safety performance in use;
(4) the traditional gallium nitride film preparation device cannot rapidly cool the prepared gallium nitride film and has poor functionality;
the traditional gallium nitride film preparation device has no function of purifying gas in the preparation bin, and is easy to generate gas pollution.
Disclosure of Invention
The invention aims to provide a preparation device of a gallium nitride film, which is used for solving the problems that film sample holders with different sizes are inconvenient to fix and the applicability is poor in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: a preparation device of a gallium nitride film comprises a preparation bin and an evaporation chamber, wherein the evaporation chamber is fixedly connected with the bottom end inside the preparation bin, a quartz crucible is fixedly connected inside the evaporation chamber, a heating wire is fixedly connected inside the quartz crucible, an ionization cavity is fixedly connected at the top end of the evaporation chamber, a heat insulation structure is arranged on the outer side wall of the preparation bin, explosion-proof structures are arranged at positions, close to the top end, of two sides of the preparation bin, a radio frequency ionization gun is fixedly connected at one side inside the preparation bin, a vacuum pump is fixedly connected at the middle position of the top end of the preparation bin, a cooling mechanism is arranged at one side of the preparation bin, an air pipe is arranged at the output end of the cooling mechanism, the output end of the air pipe is communicated with the position, close to the top end, inside the preparation bin, a purification structure is arranged on the air pipe, a lower air inlet is arranged at a position, close to the bottom end, of one side of the preparation bin, the output end of the lower air inlet is communicated with the inside of the ionization cavity, the top end inside the preparation bin is fixedly connected with a tungsten-iodine lamp, and a fixing structure is arranged at a position, close to the top end, inside the preparation bin;
the fixed knot constructs including the lead screw, lead screw swing joint is in the inside position department that is close to the top in preparation storehouse, the top of lead screw is provided with the polished rod, the both sides of polished rod and the inside wall fixed connection in preparation storehouse, the outside both sides of lead screw are provided with the thread bush, the top fixedly connected with sliding sleeve of thread bush, the bottom fixedly connected with latch segment of thread bush, the inside of latch segment one side is provided with the slot, be provided with the sample frame between the slot, one side of lead screw runs through to the outside and the fixedly connected with handle in preparation storehouse.
Preferably, the screw thread directions of the two sides of the outer portion of the screw rod are opposite, the screw thread matched with the screw rod is arranged inside the threaded sleeve, and the screw rod is in threaded connection with the threaded sleeve.
Preferably, the sliding sleeve is sleeved on the polished rod, and the sliding sleeve and the polished rod form sliding connection.
Preferably, insulation construction comprises cavity, shell, connecting rod, nut, through-hole and heat preservation rock wool, the shell sets up the outside at the preparation storehouse, be provided with the cavity between shell and the preparation storehouse, the inside of shell is provided with the multiunit through-hole, fixedly connected with multiunit connecting rod on the lateral wall in preparation storehouse, the through-hole is run through to one side of connecting rod, the outside one side of connecting rod is provided with the nut, the inside packing of cavity has the heat preservation rock wool.
Preferably, the outer part of one side of the connecting rod is provided with threads, and the connecting rod and the through holes are in one-to-one correspondence.
Preferably, explosion-proof construction comprises siphunculus, piston, dead lever, taut board and spring, the siphunculus sets up the inside in preparation storehouse both sides respectively, the inside of siphunculus is provided with the piston, one side fixedly connected with dead lever of piston, one side fixedly connected with taut board of dead lever, fixedly connected with spring between the both ends of taut board one side and the preparation storehouse.
Preferably, the cooling mechanism comprises a cooling liquid box, a fan, a coiled pipe and a support plate, the support plate is fixedly connected to one side of the preparation bin at a position close to the bottom end, the top end of the support plate is fixedly connected with the cooling liquid box, the fan is fixedly connected to one side of the cooling liquid box, and the coiled pipe is fixedly connected to the inside of the cooling liquid box.
Preferably, one side of the coiled pipe is communicated with the interior of the preparation bin, and the other side of the coiled pipe is communicated with the input end of the fan.
Preferably, purification structure comprises purifying box, circular slab, filter screen, fixture block, draw-in groove and nanometer adsorbent, purifying box fixed connection is on the tuber pipe, the inside of purifying box is provided with the circular slab, the top fixedly connected with filter screen of circular slab, the both sides and the both ends difference fixedly connected with fixture block of circular slab, the inside both sides and the both ends of purifying box are provided with the draw-in groove respectively, the inside embedding of filter screen has multiunit nanometer adsorbent.
Preferably, the outer diameter of the clamping block is smaller than the inner diameter of the clamping groove, and a clamping structure is formed between the clamping block and the clamping groove.
Compared with the prior art, the invention has the beneficial effects that: the gallium nitride film preparation device not only realizes convenient fixation of film sample holders with different sizes, has strong applicability, better heat insulation performance, stable internal temperature, improved gallium nitride film preparation quality, and explosion-proof function, has good safety performance when in use, realizes rapid cooling of the prepared gallium nitride film, has strong functionality, realizes the function of purifying gas in a preparation bin, and is not easy to generate gas pollution;
(1) by arranging the fixing structure which comprises a lead screw, the lead screw is movably connected at the position close to the top end in the preparation bin, the top end of the lead screw is provided with a polished rod, two sides of the polished rod are fixedly connected with the inner side wall of the preparation bin, two sides of the outer part of the lead screw are provided with threaded sleeves, the top end of each threaded sleeve is fixedly connected with a sliding sleeve, the bottom end of each threaded sleeve is fixedly connected with a locking block, the inner part of one side of each locking block is provided with a slot, a sample frame is arranged between the slots, one side of the lead screw penetrates through the outer part of the preparation bin and is fixedly connected with a handle, when in use, the handle is rotated to drive the screw rod to rotate, the screw rod drives the thread sleeves to move oppositely or reversely, so that the distance between the locking blocks can be adjusted, therefore, the slots can fix the sample racks with different specifications, so that the device is suitable for samples with different specifications, and the applicability of the device is greatly improved;
(2) by arranging the cavity, the shell, the connecting rod, the nut, the through hole and the heat-insulating rock wool, when the gallium nitride film preparation device is used, the shell is fixed outside the preparation bin by the nut and the through hole, a cavity is formed between the preparation bin and the shell at the moment, then the heat-insulating rock wool is filled in the cavity, and the heat-insulating property of the heat-insulating rock wool is utilized, so that the rapid heat loss in the preparation bin can be avoided, the temperature in the preparation bin can be kept stable, and the quality of gallium nitride film preparation is improved;
(3) by arranging the through pipe, the piston, the fixed rod, the tensioning plate and the spring, when the device is used, if the pressure in the preparation bin is too high, the piston can be ejected outwards under a larger pressure, at the moment, the fixed rod can eject the tensioning plate outwards, so that the tensioning plate drives the spring to stretch until the piston is ejected out of the through pipe, the pressure in the preparation bin can be released through the through pipe, the danger of explosion caused by improper operation is avoided, and the safety performance of the device in use is improved;
(4) by arranging the cooling liquid box, the fan, the coiled pipe and the supporting plate, when the device is used, after the gallium nitride film is prepared, the fan is started, the fan extracts hot gas in the preparation bin through the coiled pipe, then the cooling liquid in the cooling liquid box cools the hot gas passing through the coiled pipe, and then the cooled gas is discharged into the preparation bin through the air pipe, so that the gas flow on the surface of the gallium nitride film in the preparation bin can be accelerated, the gallium nitride film can be rapidly cooled, the operation steps are simplified, and the functionality is strong;
(5) through being provided with the purifying box, the circular slab, the filter screen, the fixture block, draw-in groove and nanometer adsorbent, when using, after the inside gas in preparation storehouse was taken out and is cooled off, at the in-process that the tuber pipe emits into the inside in preparation storehouse, can pass through the purifying box earlier, the inside nanometer adsorbent of filter screen can adsorb the toxic substance in the gas and purify this moment, get rid of the toxic substance in the inside gas in preparation storehouse gradually, thereby can avoid when opening the preparation storehouse, the toxic substance in the inside gas in preparation storehouse diffuses to the gas, the atmosphere environment is protected.
Drawings
FIG. 1 is a schematic front sectional view of the present invention;
FIG. 2 is an enlarged front sectional view of the purification structure of the present invention;
FIG. 3 is an enlarged front view, partially sectioned structural schematic diagram of the explosion-proof structure of the present invention;
FIG. 4 is an enlarged partial cross-sectional view taken at A in FIG. 1 according to the present invention;
FIG. 5 is an enlarged front view of a screw rod according to the present invention;
fig. 6 is an enlarged bottom sectional view of the filter screen according to the present invention.
In the figure: 1. preparing a bin; 2. an evaporation chamber; 3. a quartz crucible; 4. an electric heating wire; 5. an ionization chamber; 6. a heat preservation structure; 601. a cavity; 602. a housing; 603. a connecting rod; 604. a nut; 605. a through hole; 606. heat preservation rock wool; 7. an explosion-proof structure; 701. pipe passing; 702. a piston; 703. fixing the rod; 704. tensioning the plate; 705. a spring; 8. a radio frequency ionization gun; 9. a screw rod; 10. a polish rod; 11. a iodine tungsten lamp; 12. a vacuum pump; 13. a sample holder; 14. a handle; 15. a cooling mechanism; 1501. a coolant tank; 1502. a fan; 1503. a serpentine tube; 1504. a support plate; 16. a purification structure; 1601. a purification box; 1602. a circular plate; 1603. a filter screen; 1604. a clamping block; 1605. a card slot; 1606. a nano-adsorbent; 17. a lower air inlet; 18. a threaded sleeve; 19. a sliding sleeve; 20. a locking block; 21. a slot; 22. and (7) an air pipe.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1: referring to fig. 1-6, a device for preparing a gallium nitride film comprises a preparation chamber 1 and an evaporation chamber 2, wherein the evaporation chamber 2 is fixedly connected to the bottom end inside the preparation chamber 1, a quartz crucible 3 is fixedly connected to the inside of the evaporation chamber 2, an electric heating wire 4 is fixedly connected to the inside of the quartz crucible 3, an ionization chamber 5 is fixedly connected to the top end of the evaporation chamber 2, a heat insulation structure 6 is arranged on the outer side wall of the preparation chamber 1, explosion-proof structures 7 are arranged at positions near the top end on two sides of the preparation chamber 1, a radio frequency ionization gun 8 is fixedly connected to one side inside the preparation chamber 1, a vacuum pump 12 is fixedly connected to the middle position of the top end of the preparation chamber 1, the type of the vacuum pump 12 can be 2BV-5110, a cooling mechanism 15 is arranged at one side of the preparation chamber 1, an air pipe 22 is arranged at the output end of the cooling mechanism 15, and an air pipe is communicated with a position near the top end inside the preparation chamber 1, the air pipe 22 is provided with a purification structure 16, a lower air inlet 17 is arranged at a position close to the bottom end of one side of the preparation chamber 1, the output end of the lower air inlet 17 is communicated with the inside of the ionization chamber 5, the top end of the inside of the preparation chamber 1 is fixedly connected with a tungsten iodide lamp 11, and a fixed structure is arranged at a position close to the top end of the inside of the preparation chamber 1;
referring to fig. 1-6, the device for preparing the gallium nitride film further comprises a fixing structure, the fixing structure comprises a lead screw 9, the lead screw 9 is movably connected to a position close to the top end inside the preparation bin 1, a polished rod 10 is arranged at the top end of the lead screw 9, two sides of the polished rod 10 are fixedly connected with the inner side wall of the preparation bin 1, two sides of the outside of the lead screw 9 are provided with threaded sleeves 18, the top end of each threaded sleeve 18 is fixedly connected with a sliding sleeve 19, the bottom end of each threaded sleeve 18 is fixedly connected with a locking block 20, a slot 21 is arranged inside one side of each locking block 20, a sample frame 13 is arranged between the slots 21, and one side of the lead screw 9 penetrates through the outside of the preparation bin 1 and is fixedly connected with a handle 14;
the thread directions of the two sides of the outer part of the screw rod 9 are opposite, the threads matched with the screw rod 9 are arranged in the thread sleeve 18, and the screw rod 9 is in threaded connection with the thread sleeve 18;
the sliding sleeve 19 is sleeved on the polished rod 10, and the sliding sleeve 19 and the polished rod 10 form sliding connection;
specifically, as shown in fig. 1 and 5, when the device is used, the handle 14 is rotated, the handle 14 drives the screw rod 9 to rotate, the screw rod 9 drives the threaded sleeve 18 to move in opposite directions or in reverse directions, so that the distance between the locking blocks 20 can be adjusted, the slot 21 can be used for fixing sample frames 13 of different specifications, the device can be suitable for samples of different specifications, and the applicability of the device is greatly improved.
Example 2: the heat preservation structure 6 comprises a cavity 601, a shell 602, connecting rods 603, nuts 604, through holes 605 and heat preservation rock wool 606, wherein the shell 602 is arranged outside the preparation bin 1, the cavity 601 is arranged between the shell 602 and the preparation bin 1, a plurality of groups of through holes 605 are arranged inside the shell 602, the outer side wall of the preparation bin 1 is fixedly connected with the plurality of groups of connecting rods 603, one side of each connecting rod 603 penetrates through the corresponding through hole 605, the nut 604 is arranged on one side outside the corresponding connecting rod 603, and the heat preservation rock wool 606 is filled in the cavity 601;
the outer part of one side of the connecting rod 603 is provided with threads, and the connecting rods 603 correspond to the through holes 605 one by one;
specifically, as shown in fig. 1 and 4, when in use, the outer shell 602 is fixed outside the preparation bin 1 by the nut 604 and the through hole 605, at this time, a cavity 601 is formed between the preparation bin 1 and the outer shell 602, then the cavity 601 is filled with the heat-insulating rock wool 606, and by utilizing the heat-insulating property of the heat-insulating rock wool 606, the heat loss inside the preparation bin 1 can be prevented from being fast, so that the temperature inside the preparation bin 1 can be kept stable, and the quality of preparing the gallium nitride film can be improved.
Example 3: the explosion-proof structure 7 consists of a through pipe 701, a piston 702, a fixing rod 703, a tensioning plate 704 and a spring 705, wherein the through pipe 701 is respectively arranged inside two sides of the preparation bin 1, the piston 702 is arranged inside the through pipe 701, the fixing rod 703 is fixedly connected to one side of the piston 702, the tensioning plate 704 is fixedly connected to one side of the fixing rod 703, and the spring 705 is fixedly connected between two ends of one side of the tensioning plate 704 and the preparation bin 1;
specifically, as shown in fig. 1 and fig. 3, when the device is used, if the pressure inside the preparation bin 1 is too high, the piston 702 is pushed out under a large pressure, at this time, the fixing rod 703 pushes the tension plate 704 outwards, so that the tension plate 704 drives the spring 705 to stretch until the piston 702 is pushed out from the inside of the through pipe 701, and thus the pressure inside the preparation bin 1 can be released through the through pipe 701, the danger of explosion caused by improper operation is avoided, and the safety performance of the device in use is improved.
Example 4: the cooling mechanism 15 consists of a cooling liquid tank 1501, a fan 1502, a serpentine tube 1503 and a supporting plate 1504, wherein the supporting plate 1504 is fixedly connected to one side of the preparation bin 1 close to the bottom end, the top end of the supporting plate 1504 is fixedly connected with the cooling liquid tank 1501, one side of the cooling liquid tank 1501 is fixedly connected with the fan 1502, the model of the fan 1502 can be FBT35-11-3.55, and the serpentine tube 1503 is fixedly connected inside the cooling liquid tank 1501;
one side of the serpentine tube 1503 is communicated with the interior of the preparation bin 1, and the other side of the serpentine tube 1503 is communicated with the input end of the fan 1502;
specifically, as shown in fig. 1, when the preparation of the gallium nitride film is completed, the fan 1502 is started, the fan 1502 extracts hot gas inside the preparation bin 1 through the serpentine tube 1503, then the cooling liquid inside the cooling liquid tank 1501 cools the hot gas passing through the serpentine tube 1503, and then the cooled gas is discharged into the preparation bin 1 through the air pipe 22, so that the gas flow on the surface of the gallium nitride film of the preparation bin 1 can be accelerated, the gallium nitride film can be cooled rapidly, the operation steps are simplified, and the functionality is strong.
Example 5: the purification structure 16 comprises a purification box 1601, a circular plate 1602, a filter screen 1603, a fixture block 1604, a clamping groove 1605 and a nano adsorbent 1606, the purification box 1601 is fixedly connected to the air pipe 22, the circular plate 1602 is arranged inside the purification box 1601, the filter screen 1603 is fixedly connected to the top end of the circular plate 1602, the fixture block 1604 is fixedly connected to two sides and two ends of the circular plate 1602 respectively, the clamping groove 1605 is arranged on two sides and two ends inside the purification box 1601 respectively, and a plurality of groups of nano adsorbents 1606 are embedded inside the filter screen 1603;
the outer diameter of the fixture block 1604 is smaller than the inner diameter of the clamping groove 1605, and a clamping structure is formed between the fixture block 1604 and the clamping groove 1605;
specifically, as shown in fig. 1, fig. 2 and fig. 6, in use, after the gas inside the preparation cabin 1 is pumped out and cooled, in the process of being discharged into the preparation cabin 1 through the air pipe 22, the gas will first pass through the purification box 1601, at this time, the nano adsorbent 1606 inside the filter screen 1603 will adsorb and purify the toxic substances in the gas, and gradually remove the toxic substances in the gas inside the preparation cabin 1, so that the toxic substances in the gas inside the preparation cabin 1 can be prevented from being diffused into the gas when the preparation cabin 1 is opened, and the atmospheric environment can be protected.
The working principle is as follows: when the device is used, firstly, the handle 14 is rotated, the handle 14 drives the screw rod 9 to rotate, the screw rod 9 drives the thread sleeve 18 to move oppositely or reversely, so that the distance between the locking blocks 20 can be adjusted, the slot 21 can fix sample frames 13 of different specifications, the device can be suitable for samples of different specifications, and the applicability of the device is greatly improved.
Afterwards, when the device is used, the shell 602 is fixed outside the preparation bin 1 through the nut 604 and the through hole 605, a cavity 601 is formed between the preparation bin 1 and the shell 602 at the moment, then the cavity 601 is filled with the heat-insulating rock wool 606, and the heat-insulating property of the heat-insulating rock wool 606 is utilized, so that the phenomenon that the heat loss inside the preparation bin 1 is fast can be avoided, the temperature inside the preparation bin 1 can be kept stable, and the quality of preparing the gallium nitride film is improved.
Then, when in use, after the gallium nitride film is prepared, the fan 1502 is started, the fan 1502 extracts the hot gas inside the preparation bin 1 through the serpentine tube 1503, then the cooling liquid inside the cooling liquid tank 1501 cools the hot gas passing through the inside of the serpentine tube 1503, and then the cooled gas is discharged into the preparation bin 1 through the air pipe 22, so that the gas flow on the surface of the gallium nitride film of the preparation bin 1 can be accelerated, the gallium nitride film can be rapidly cooled, the operation steps are simplified, and the functionality is strong.
Then, when using, after the inside gas in preparation storehouse 1 was taken out and the cooling, at the inside in-process of discharging into preparation storehouse 1 through tuber pipe 22, can pass through purifying box 1601 earlier, the inside nanometer adsorbent 1606 of filter screen 1603 can adsorb the toxic substance in the gas and purify this moment, gets rid of the toxic substance in the inside gas in preparation storehouse 1 gradually to can avoid when opening preparation storehouse 1, the toxic substance in the inside gas in preparation storehouse 1 diffuses to in the gas, protects atmospheric environment.
Finally, when the device is used, if the pressure inside the preparation bin 1 is too high, the piston 702 can be ejected outwards under a larger pressure, at the moment, the fixing rod 703 can eject the tensioning plate 704 outwards, so that the tensioning plate 704 drives the spring 705 to stretch until the piston 702 is ejected out from the inside of the through pipe 701, and therefore the pressure inside the preparation bin 1 can be released through the through pipe 701, the danger of explosion caused by misoperation is avoided, and the safety performance of the device in use is improved.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (9)
1. The utility model provides a preparation facilities of gallium nitride film, includes preparation storehouse (1) and vaporizer (2), its characterized in that: the evaporation chamber (2) is fixedly connected with the bottom inside the preparation bin (1), the quartz crucible (3) is fixedly connected inside the evaporation chamber (2), the heating wire (4) is fixedly connected inside the quartz crucible (3), the ionization chamber (5) is fixedly connected on the top end of the evaporation chamber (2), a heat insulation structure (6) is arranged on the outer side wall of the preparation bin (1), an explosion-proof structure (7) is arranged at the position, close to the top end, of the two sides of the preparation bin (1), a radio frequency ionization gun (8) is fixedly connected on one side inside the preparation bin (1), a vacuum pump (12) is fixedly connected at the middle position of the top end of the preparation bin (1), a cooling mechanism (15) is arranged on one side of the preparation bin (1), an air pipe (22) is arranged at the output end of the cooling mechanism (15), the output end of the air pipe (22) is communicated with the position, close to the top end, inside the preparation bin (1), the air pipe (22) is provided with a purification structure (16), a lower air inlet (17) is arranged at a position close to the bottom end of one side of the preparation bin (1), the output end of the lower air inlet (17) is communicated with the inside of the ionization chamber (5), the top end of the inside of the preparation bin (1) is fixedly connected with a tungsten iodine lamp (11), and a fixed structure is arranged at a position close to the top end of the inside of the preparation bin (1); the fixing structure comprises a screw rod (9), the screw rod (9) is movably connected to the position, close to the top end, inside the preparation bin (1), a polished rod (10) is arranged at the top end of the screw rod (9), two sides of the polished rod (10) are fixedly connected with the inner side wall of the preparation bin (1), two sides of the outside of the screw rod (9) are provided with threaded sleeves (18), the top end of each threaded sleeve (18) is fixedly connected with a sliding sleeve (19), the bottom end of each threaded sleeve (18) is fixedly connected with a locking block (20), a slot (21) is formed inside one side of each locking block (20), a sample frame (13) is arranged between the slots (21), and one side of the screw rod (9) penetrates through the outside of the preparation bin (1) and is fixedly connected with a handle (14); the sliding sleeve (19) is sleeved on the polished rod (10), and the sliding sleeve (19) is in sliding connection with the polished rod (10).
2. The apparatus for preparing a gallium nitride thin film according to claim 1, wherein: the screw thread directions of two sides of the outer portion of the screw rod (9) are opposite, the screw thread matched with the screw rod (9) is arranged in the screw thread sleeve (18), and the screw rod (9) is in threaded connection with the screw thread sleeve (18).
3. The apparatus for preparing a gallium nitride thin film according to claim 1, wherein: the heat preservation structure (6) comprises a cavity (601), a shell (602), connecting rods (603), nuts (604), through holes (605) and heat preservation rock wool (606), wherein the shell (602) is arranged outside the preparation bin (1), the cavity (601) is arranged between the shell (602) and the preparation bin (1), a plurality of groups of through holes (605) are arranged inside the shell (602), a plurality of groups of connecting rods (603) are fixedly connected to the outer side wall of the preparation bin (1), one side of each connecting rod (603) penetrates through the corresponding through hole (605), the nuts (604) are arranged on one side of the outer part of each connecting rod (603), and the heat preservation rock wool (606) is filled inside the cavity (601).
4. The apparatus for preparing a gallium nitride thin film according to claim 3, wherein: the outside of one side of the connecting rod (603) is provided with threads, and the connecting rod (603) and the through hole (605) are in one-to-one correspondence.
5. The apparatus for preparing a gallium nitride thin film according to claim 3, wherein: explosion-proof construction (7) comprises siphunculus (701), piston (702), dead lever (703), take-up plate (704) and spring (705), siphunculus (701) set up respectively in the inside of preparing storehouse (1) both sides, the inside of siphunculus (701) is provided with piston (702), one side fixedly connected with dead lever (703) of piston (702), one side fixedly connected with take-up plate (704) of dead lever (703), fixedly connected with spring (705) between both ends of take-up plate (704) one side and preparing storehouse (1).
6. The apparatus for preparing a gallium nitride thin film according to claim 5, wherein: the cooling mechanism (15) comprises a cooling liquid tank (1501), a fan (1502), a coiled pipe (1503) and a supporting plate (1504), wherein the supporting plate (1504) is fixedly connected to one side of the preparation bin (1) at a position close to the bottom end, the top end of the supporting plate (1504) is fixedly connected with the cooling liquid tank (1501), one side of the cooling liquid tank (1501) is fixedly connected with the fan (1502), and the inside of the cooling liquid tank (1501) is fixedly connected with the coiled pipe (1503).
7. The apparatus for preparing a gallium nitride thin film according to claim 6, wherein: one side of the coiled pipe (1503) is communicated with the interior of the preparation bin (1), and the other side of the coiled pipe (1503) is communicated with the input end of the fan (1502).
8. The apparatus for preparing a gallium nitride thin film according to claim 6, wherein: purification structure (16) comprises purifying box (1601), circular slab (1602), filter screen (1603), fixture block (1604), draw-in groove (1605) and nanometer adsorbent (1606), purifying box (1601) fixed connection is on tuber pipe (22), the inside of purifying box (1601) is provided with circular slab (1602), the top fixedly connected with filter screen (1603) of circular slab (1602), both sides and both ends difference fixedly connected with fixture block (1604) of circular slab (1602), the inside both sides and both ends of purifying box (1601) are provided with draw-in groove (1605) respectively, the inside embedding of filter screen (1603) has multiunit nanometer adsorbent (1606).
9. A method for producing a gallium nitride thin film using the apparatus for producing a gallium nitride thin film according to claim 8, characterized in that: firstly, rotating a handle (14), driving a screw rod (9) to rotate by the handle (14), driving a thread sleeve (18) to move oppositely or reversely by the screw rod (9), so that the distance between locking blocks (20) can be adjusted, then fixing a shell (602) outside a preparation bin (1) by using a nut (604) and a through hole (605) when the device is used, forming a cavity (601) between the preparation bin (1) and the shell (602), then filling heat-insulating rock wool (606) in the cavity (601), and utilizing the heat-insulating property of the heat-insulating rock wool (606); then, when in use, after the gallium nitride film is prepared, starting a fan (1502), extracting hot gas in the preparation bin (1) by the fan (1502) through a coiled pipe (1503), cooling the hot gas passing through the coiled pipe (1503) by cooling liquid in a cooling liquid tank (1501), and then discharging the cooled hot gas into the preparation bin (1) through an air pipe (22); then, when the air purifier is used, after the air in the preparation bin (1) is pumped out and cooled, the air firstly passes through the purifying box (1601) in the process of being discharged into the preparation bin (1) through the air pipe (22), and at the moment, the nano adsorbent (1606) in the filter screen (1603) can adsorb and purify toxic substances in the air, so that the toxic substances in the air in the preparation bin (1) are gradually removed; finally, when in use, if the pressure inside the preparation bin (1) is too high, the piston (702) can be ejected outwards, and at the moment, the fixing rod (703) can eject the tensioning plate (704) outwards, so that the tensioning plate (704) drives the spring (705) to stretch until the piston (702) is ejected out of the through pipe (701).
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| US6582567B1 (en) * | 2000-11-22 | 2003-06-24 | National Research Council Of Canada | Method of growing epitaxial layers using magnetron sputter source in MBE apparatus |
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