CN112615600B - Lamb wave resonator with upper buried electrode and lower buried electrode in opposite proportion - Google Patents
Lamb wave resonator with upper buried electrode and lower buried electrode in opposite proportion Download PDFInfo
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- CN112615600B CN112615600B CN202011503388.9A CN202011503388A CN112615600B CN 112615600 B CN112615600 B CN 112615600B CN 202011503388 A CN202011503388 A CN 202011503388A CN 112615600 B CN112615600 B CN 112615600B
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- 235000019687 Lamb Nutrition 0.000 title claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000005284 excitation Effects 0.000 claims abstract description 6
- 238000003475 lamination Methods 0.000 claims abstract description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000002513 implantation Methods 0.000 description 68
- 239000010410 layer Substances 0.000 description 43
- 230000008878 coupling Effects 0.000 description 19
- 238000010168 coupling process Methods 0.000 description 19
- 238000005859 coupling reaction Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention provides a lamb wave resonator with upper and lower buried electrodes in opposite proportions. The lamb wave resonator includes: a high acoustic speed material substrate; and a piezoelectric layer over the substrate of high acoustic velocity material, the piezoelectric layer having first and second interdigital transducers provided on an upper surface and a lower surface thereof, respectively, wherein interdigital electrodes of the first and second interdigital transducers are opposed to each other in a lamination direction across the piezoelectric layer and have the same electrode width, electrode thickness, electrode spacing, and excitation acoustic wave wavelength λ, wherein interdigital electrodes of the first and second interdigital transducers are buried in the piezoelectric layer in a thickness ratio of h, respectively 1 And h 2 Wherein h is 1 +h 2 ＝1。
Description
Technical Field
The invention relates to the field of mobile phone radio frequency, in particular to a lamb wave resonator with upper and lower buried electrodes in opposite proportions.
Background
The development of 5G cell phone filters requires lower loss, higher frequencies and greater bandwidth, which presents serious challenges to existing Surface Acoustic Wave (SAW) and Bulk Acoustic Wave (BAW) technologies, which are often limited by the relatively spurious effects. In order to meet the requirement, a Lamb (Lamb) wave structure is recently proposed, and mainly adopts a plate wave mode, has higher sound velocity, and shows application advantages in sub-6GHz and millimeter wave mobile communication. In the lamb wave resonator, the main mode is lamb wave, and the rayleigh wave mode is spurious mode. The presence of spurious modes can affect the performance of the resonator, such as reducing the Q value (quality factor). How to improve the electromechanical coupling coefficient and restrain the spurious effect is one of the key difficulties faced by the lamb wave resonator.
Disclosure of Invention
This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
In order to solve the above problems, the present invention aims to provide an improved lamb wave resonator structure with POI structure, which has the advantages of high electromechanical coupling coefficient and small spurious.
According to an aspect of the present invention, there is provided a lamb wave resonator having a POI structure, the lamb wave resonator comprising:
a high acoustic speed material substrate; and
a piezoelectric layer over the substrate of high acoustic velocity material, the piezoelectric layer having first and second interdigital transducers provided on an upper surface and a lower surface thereof, respectively, wherein interdigital electrodes of the first and second interdigital transducers face each other in a lamination direction across the piezoelectric layer and have the same electrode width, electrode thickness, electrode pitch, and excitation acoustic wave wavelength lambda,
wherein the ratio of the interdigital electrodes of the first and second interdigital transducers to be embedded in the piezoelectric layer in thickness is h 1 And h 2 Wherein h is 1 +h 2 ＝1。
According to a further embodiment of the present invention, the values of h1 and h2 are respectively one of the following combinations:
10％≤h 1 ≤20％，80％≤h 2 ≤90％；
h 1 ＝40％，h 2 =60%; and
70％≤h 1 ≤80％，20％≤h 2 ≤30％。
according to a further embodiment of the invention, the h 1 And h 2 80% and 20% respectively.
According to a further embodiment of the invention, the high sonic velocity material is 4H-SiC or 6H-SiC.
According to a further embodiment of the invention, the lamb wave resonator further comprises: and a low acoustic speed material dielectric layer arranged between the high acoustic speed material substrate and the piezoelectric layer.
According to a further embodiment of the invention, the low acoustic speed material is SiO 2 The thickness is 0.075 lambda-0.1 lambda.
According to a further embodiment of the invention, the material of the piezoelectric layer is 30 YX-LiNbO 3 。
According to a further embodiment of the invention, the wavelength λ is 2 μm.
According to a further embodiment of the invention, the high acoustic speed material substrate has a thickness of 5λ and the piezoelectric layer has a thickness of 0.8λ.
According to a further embodiment of the invention, the electrode width is 0.25 lambda, the electrode spacing is 0.25 lambda and the electrode thickness is 200-300nm.
Compared with the scheme in the prior art, the lamb wave resonator provided by the invention has at least the following advantages:
1. the proportion of the upper electrode and the lower electrode embedded into the piezoelectric layer is controlled to be opposite, the obtained lamb wave resonator can have an electromechanical coupling coefficient of more than 21.9%, and the main mode is free from or has little stray;
2. by interposing a dielectric layer of low acoustic speed material (e.g. SiO) between the piezoelectric layer and the high acoustic speed substrate 2 ) The frequency Temperature Coefficient (TCF) can be reduced; meanwhile, the low sound velocity material dielectric layer and the high sound velocity substrate form a reflecting layer to prevent sound waves from leaking from the direction of the substrate, so that the lamb wave resonator has a high Q value;
3. by further coating the piezoelectric layer with a dielectric layer material, the frequency Temperature Coefficient (TCF) can be further reduced and can also serve as a protective layer.
These and other features and advantages will become apparent upon reading the following detailed description and upon reference to the associated drawings. It is to be understood that both the foregoing general description and the following detailed description are explanatory only and are not restrictive of aspects as claimed.
Drawings
So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only certain typical aspects of this invention and are therefore not to be considered limiting of its scope, for the description may admit to other equally effective aspects.
Fig. 1 is a schematic structural view of a surface acoustic wave interdigital transducer.
Fig. 2 is a cross-sectional view showing the structure of the lamb wave resonator 100 according to one embodiment of the present invention.
Fig. 3 is an enlarged partial schematic view of a lamb wave resonator.
Fig. 4 is an admittance chart in the case where the upper electrode implantation ratio is 0% and the lower electrode implantation ratio is 100%.
Fig. 5 is an admittance diagram in the case where the upper electrode implantation ratio is 10% and the lower electrode implantation ratio is 90%.
Fig. 6 is an admittance chart in the case where the upper electrode implantation ratio is 20% and the lower electrode implantation ratio is 80%.
Fig. 7 is an admittance chart in the case where the upper electrode implantation ratio is 30% and the lower electrode implantation ratio is 70%.
Fig. 8 is an admittance chart in the case where the upper electrode implantation ratio is 40% and the lower electrode implantation ratio is 60%.
Fig. 9 is an admittance diagram in the case where the upper electrode implantation ratio is 50% and the lower electrode implantation ratio is 50%.
Fig. 10 is an admittance chart in the case where the upper electrode implantation ratio is 60% and the lower electrode implantation ratio is 40%.
Fig. 11 is an admittance chart in the case where the upper electrode implantation ratio is 70% and the lower electrode implantation ratio is 30%.
Fig. 12 is an admittance chart in the case where the upper electrode implantation ratio is 80% and the lower electrode implantation ratio is 20%.
Fig. 13 is an admittance chart in the case where the upper electrode implantation ratio is 90% and the lower electrode implantation ratio is 10%.
Fig. 14 is an admittance chart in the case where the upper electrode implantation ratio is 100% and the lower electrode implantation ratio is 0%.
Fig. 15 is a cross-sectional view showing the structure of a lamb wave resonator 200 according to another embodiment of the present invention.
Fig. 16 is a cross-sectional view showing the structure of a lamb wave resonator 300 according to still another embodiment of the present invention.
Detailed Description
The features of the present invention will become more apparent from the detailed description set forth below when taken in conjunction with the drawings.
Fig. 1 is a schematic structure diagram of a surface acoustic wave interdigital transducer (IDT). As shown in fig. 1, a metal thin film is deposited on the surface of a piezoelectric substrate, and a comb-shaped set of crossed metal electrodes is obtained by using a photolithography method in a semiconductor planar process. The metal electrodes are arranged in a crossing way, and bus bars are connected at two ends of the metal electrodes to form two stages of devices respectively, so that the interdigital transducer is obtained. In the example of fig. 1, 6 metal electrodes numbered 1-6 are shown, indicating that the number of interdigital electrodes of this interdigital transducer is 6, wherein the electrodes (also referred to as fingers) numbered odd (1, 3, 5) are connected together to form the positive input (or output) end point (+v in the figure) of the interdigital transducer, and the fingers of the electrodes numbered even (2, 4, 6) are connected together to form the positive input (or output) end point (V in the figure) of the interdigital transducer.
Several main parameters of the interdigital transducer of surface acoustic waves are: the number of finger pairs N (e.g., the number of finger pairs n=3 in fig. 1), the width d of the metal finger, the half-cycle length L, and the gap width b of adjacent fingers (b=l-d).
Fig. 2 is a schematic cross-sectional view of a lamb wave resonator 100, such as the one shown in fig. 1, after the lamb wave resonator has been transected along line A-A, in accordance with one embodiment of the present invention. As shown in fig. 2, lamb wave resonator 100 may include a substrate 101, and the substrate 101 may use a high acoustic velocity material, such as 4H-SiC or 6H-SiC, and constitute a POI structure.
Above the substrate 101 is a piezoelectric layer 102, and first and second interdigital transducers (IDTs) are provided on the upper and lower surfaces of the piezoelectric layer 102, respectively, wherein interdigital electrodes (also may be simply referred to as upper and lower electrodes) of the first and second interdigital transducers are opposed to each other in the lamination direction across the piezoelectric layer 102, respectively, and have the same electrode width, electrode thickness, electrode pitch, and excitation acoustic wave wavelength λ. As an example, the material of the piezoelectric layer 102 may be 30 YX-LiNbO 3 . The interdigital electrodes of the first interdigital transducer and the second interdigital transducer can be made of Ti, al, cu, au, pt, ag, pd, ni metal or the likeGold, or a laminate of these metals or alloys. It will be appreciated by those skilled in the art that although only two electrode fingers are shown for both the upper and lower electrodes in fig. 2, this is merely for convenience of illustration, and in practice, the interdigital electrode of a lamb wave resonator typically has more than two electrode fingers (as shown in fig. 1) each having the same electrode width, electrode thickness, electrode spacing, and excitation acoustic wavelength λ.
It is noted that the upper and lower electrodes in fig. 2 are each partially embedded in the piezoelectric layer 102, as will be described in further detail below in connection with fig. 3.
Fig. 3 is an enlarged partial schematic view of a lamb wave resonator. As shown in FIG. 3, the thickness of the upper electrode without the piezoelectric layer embedded therein is denoted as h 11 The thickness of the upper electrode embedded in the piezoelectric layer is recorded as h 12 The thickness of the piezoelectric layer not embedded in the lower electrode is denoted as h 21 The thickness of the upper electrode embedded in the piezoelectric layer is recorded as h 22 . Assuming that the electrode thicknesses of the upper and lower electrodes are both h, h=h 11 +h 12 ＝h 21 +h 22 . Correspondingly, the proportion of the upper electrode embedded into the piezoelectric layer is h 1 ＝h 12 And/h, the ratio of the lower electrode to the buried piezoelectric layer is h 2 ＝h 22 And/h. According to one embodiment of the invention, the ratio of the upper electrode to the lower electrode embedded in the piezoelectric layer is reversed, i.e. h 1 +h 2 ＝1。
Furthermore, in one example, the sum of the electrode width and electrode spacing may be 0.5λ, where λ is the excitation acoustic wave length of the electrode. The electrode width may be 0.25 lambda. Further, for reference, in this example, λ may be 2 μm, electrode thicknesses of the upper and lower electrodes are 300nm, a thickness of the piezoelectric layer 102 is 0.8λ, and a thickness of the substrate 101 is 5λ.
In previous attempts at improving the electromechanical coupling coefficient and the spurious effects, the influence of the different degrees of embedding the upper and lower electrodes into the piezoelectric layer on the electromechanical coupling coefficient and the spurious effects has never been considered and explored. Figures 4-12 show admittance diagrams of lamb wave resonators at different ratios of upper and lower electrodes embedded in a piezoelectric layer, respectively. In these figures, the electrode thickness of the upper and lower electrodes is 300nm, but thisMerely one example of matching the dimensions of the resonator mentioned before, other dimensions are possible and have a similar effect. Further, in these figures, f s For resonance frequency f p For antiresonant frequency, center frequency f 0 Can be calculated according to the following formula (1):
f 0 ＝(f s +f p )/2 (1)
coefficient of electromechanical coupling k 2 Can be calculated as the following formula (2):
k 2 ＝(π 2 /8)(f p 2 -f s 2 )/f s 2 (2)
fig. 4 is an admittance chart in the case where the upper electrode implantation ratio is 0% and the lower electrode implantation ratio is 100%. As shown in fig. 4, in the case where the upper electrode implantation ratio is 0% and the lower electrode implantation ratio is 100%, the resonance frequency f s About 2133MHz, antiresonance frequency f p About 2310MHz, the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 21.32%.
Fig. 5 is an admittance diagram in the case where the upper electrode implantation ratio is 10% and the lower electrode implantation ratio is 90%. As shown in fig. 5, in the case where the upper electrode implantation ratio is 10% and the lower electrode implantation ratio is 90%, the resonance frequency f s About 2101MHz, antiresonance frequency f p About 2280MHz, the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 21.92%.
Fig. 6 is an admittance chart in the case where the upper electrode implantation ratio is 20% and the lower electrode implantation ratio is 80%. As shown in fig. 4, in the case where the upper electrode implantation ratio is 20% and the lower electrode implantation ratio is 80%, the resonance frequency f s About 2110MHz, antiresonance frequency f p About 2292MHz, the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 22.20%.
Fig. 7 is an admittance chart in the case where the upper electrode implantation ratio is 30% and the lower electrode implantation ratio is 70%. As shown in FIG. 7, the upper electrode implantation ratio was 30%, and the power was turned offAt a pole implantation ratio of 70%, the resonant frequency f s About 2118MHz, antiresonance frequency f p About 2305MHz, at which time the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 22.75%.
Fig. 8 is an admittance chart in the case where the upper electrode implantation ratio is 40% and the lower electrode implantation ratio is 60%. As shown in fig. 8, in the case where the upper electrode implantation ratio is 40% and the lower electrode implantation ratio is 60%, the resonance frequency f s About 2134MHz, antiresonance frequency f p About 2328MHz, at which time the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 23.45%.
Fig. 9 is an admittance diagram in the case where the upper electrode implantation ratio is 50% and the lower electrode implantation ratio is 50%. As shown in fig. 9, in the case where the upper electrode implantation ratio is 50% and the lower electrode implantation ratio is 50%, the resonance frequency f s About 2148MHz, antiresonant frequency f p About 2348MHz, at which time the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 24.04%.
Fig. 10 is an admittance chart in the case where the upper electrode implantation ratio is 60% and the lower electrode implantation ratio is 40%. As shown in fig. 10, in the case where the upper electrode implantation ratio is 60% and the lower electrode implantation ratio is 40%, the resonance frequency f s About 2148MHz, antiresonant frequency f p About 2352MHz, at which time the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 24.55%.
Fig. 11 is an admittance chart in the case where the upper electrode implantation ratio is 70% and the lower electrode implantation ratio is 30%. As shown in fig. 11, in the case where the upper electrode implantation ratio is 70% and the lower electrode implantation ratio is 30%, the resonance frequency f s At approximately 2156MHz, antiresonance frequency f p About 2363MHz, at which time the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 24.83%.
Fig. 12 is an admittance chart in the case where the upper electrode implantation ratio is 80% and the lower electrode implantation ratio is 20%. As shown in fig. 12, in the case where the upper electrode implantation ratio is 80% and the lower electrode implantation ratio is 20%, the resonance frequency f s At approximately 2151MHz, antiresonance frequency f p About 2359MHz, at which time the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 25.01%.
Fig. 13 is an admittance chart in the case where the upper electrode implantation ratio is 90% and the lower electrode implantation ratio is 10%. As shown in fig. 13, in the case where the upper electrode implantation ratio is 90% and the lower electrode implantation ratio is 10%, the resonance frequency f s About 2145MHz, antiresonant frequency f p About 2367MHz, at which time the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 25.61%.
Fig. 14 is an admittance chart in the case where the upper electrode implantation ratio is 100% and the lower electrode implantation ratio is 0%. As shown in fig. 14, in the case where the upper electrode implantation ratio is 100% and the lower electrode implantation ratio is 0%, the resonance frequency f s About 2190MHz, antiresonance frequency f p At about 2410MHz, the electromechanical coupling coefficient k can be calculated according to equation (2) 2 About 26.03%.
It has been found that, when the upper and lower electrodes are buried in opposite proportions, a high electromechanical coupling coefficient k can be obtained in the following several values 2 And at least 21.9%.
10％≤h 1 ≤20％，80％≤h 2 ≤90％；
h 1 ＝40％，h 2 =60%; and
70％≤h 1 ≤80％，20％≤h 2 ≤30％。
furthermore, it can be seen from the corresponding admittance diagram that the main mode is now free or very small, which means that spurious effects are suppressed and a relatively high Q value can be obtained.
As a preferred embodiment, the upper electrode implantation ratio may be selected to be 80% and the lower electrode implantation ratio may be selected to be 20%. The electromechanical coupling coefficient obtained is not the highest at this time, but is relatively high, although it is almost free from spurious, and the Q value is also high.
FIG. 15 is a diagram illustrating another embodiment according to the present inventionA cross-sectional view of the structure of lamb wave resonator 200. As shown in fig. 15, the lamb wave resonator 200 has a similar structure to the lamb wave resonator 100, except that a dielectric layer 103 is interposed between a high acoustic velocity substrate 101 and a piezoelectric layer 102. Dielectric layer 103 may be composed of a low acoustic impedance material with low acoustic velocity, such as SiO 2 . The temperature coefficient of frequency of this dielectric layer 103 is positive and the temperature coefficient of frequency of the piezoelectric layer 102 is negative, so this dielectric layer 103 can lower the Temperature Coefficient of Frequency (TCF) of the lamb wave resonator. In addition, the dielectric layer 103 has a low sound velocity, and forms a reflective layer with the high sound velocity substrate 101, so that leakage of sound waves from the direction of the substrate 101 can be prevented, which contributes to obtaining a high Q value. As an example, the thickness of dielectric layer 103 may be 0.075-0.1λ.
Fig. 16 is a cross-sectional view showing the structure of a lamb wave resonator 300 according to still another embodiment of the present invention. Based on the structure of fig. 15, the lamb wave resonator 300 of fig. 16 is further covered with a dielectric layer 104 above the piezoelectric layer 102, where the dielectric layer may be made of SiO2, siN, or the like. This dielectric layer 104 may further reduce the frequency Temperature Coefficient (TCF) of the lamb wave resonator and may also act as a protective layer for the resonator.
What has been described above includes examples of aspects of the claimed subject matter. It is, of course, not possible to describe every conceivable combination of components or methodologies for purposes of describing the claimed subject matter, but one of ordinary skill in the art may recognize that many further combinations and permutations of the claimed subject matter are possible. Accordingly, the disclosed subject matter is intended to embrace all such alterations, modifications and variations that fall within the spirit and scope of the appended claims.
Claims (10)
1. A lamb wave resonator having a POI structure, the lamb wave resonator comprising:
a high acoustic speed material substrate; and
a piezoelectric layer over the substrate of high acoustic velocity material, the piezoelectric layer having first and second interdigital transducers provided on an upper surface and a lower surface thereof, respectively, wherein interdigital electrodes of the first and second interdigital transducers face each other in a lamination direction across the piezoelectric layer and have the same electrode width, electrode thickness, electrode pitch, and excitation acoustic wave wavelength lambda,
wherein the ratio of the interdigital electrodes of the first and second interdigital transducers to be embedded in the piezoelectric layer in thickness is h 1 And h 2 Wherein h is 1 +h 2 ＝1。
2. The lamb wave resonator of claim 1, wherein the values of h1 and h2 are each one of the following combinations:
10％≤h 1 ≤20％，80％≤h 2 ≤90％；
h 1 ＝40％，h 2 =60%; and
70％≤h 1 ≤80％，20％≤h 2 ≤30％。
3. the lamb wave resonator of claim 2, wherein the h 1 And h 2 80% and 20% respectively.
4. A lamb wave resonator according to claim 1, wherein the high acoustic velocity material is 4H-SiC or 6H-SiC.
5. The lamb wave resonator of claim 1, wherein the lamb wave resonator further comprises: and a low acoustic speed material dielectric layer arranged between the high acoustic speed material substrate and the piezoelectric layer.
6. The lamb wave resonator of claim 5, wherein the low acoustic velocity material is SiO 2 The thickness is 0.075 lambda-0.1 lambda.
7. The lamb wave resonator of claim 1, wherein the material of the piezoelectric layer is30°YX-LiNbO 3 。
8. Lamb wave resonator according to claim 1, wherein the wavelength λ is 2 μm.
9. The lamb wave resonator of claim 1, wherein the high acoustic velocity material substrate has a thickness of 5 λ and the piezoelectric layer has a thickness of 0.8λ.
10. A lamb wave resonator according to claim 1, wherein the electrode width is 0.25 λ, the electrode spacing is 0.25 λ, and the electrode thickness is 200-300nm.
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| DE10236003A1 (en) * | 2002-08-06 | 2004-02-19 | Epcos Ag | Acoustic wave component e.g. for use as filter for GHz frequencies, with metallic electrodes embedded in surface of component substrate |
| DE102013221030A1 (en) * | 2012-10-18 | 2014-04-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator device for cellular telephone, has bridge that is formed within acoustic impedance layers of acoustic reflector and resonator stack, and piezoelectric layer that is formed over bottom electrode |
| CN103795369A (en) * | 2012-10-26 | 2014-05-14 | 安华高科技通用Ip(新加坡)公司 | Temperature compensated resonator device having low trim sensitivy and method of fabricating the same |
| WO2019185363A1 (en) * | 2018-03-29 | 2019-10-03 | Frec'n'sys | Surface acoustic wave device on composite substrate |
| CN111316566A (en) * | 2017-11-15 | 2020-06-19 | 华为技术有限公司 | Surface acoustic wave device |
| CN112054781A (en) * | 2020-09-11 | 2020-12-08 | 广东广纳芯科技有限公司 | High-performance resonator with double-layer homodromous interdigital transducer structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10594292B2 (en) * | 2017-01-30 | 2020-03-17 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
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|---|---|---|---|---|
| DE10236003A1 (en) * | 2002-08-06 | 2004-02-19 | Epcos Ag | Acoustic wave component e.g. for use as filter for GHz frequencies, with metallic electrodes embedded in surface of component substrate |
| DE102013221030A1 (en) * | 2012-10-18 | 2014-04-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator device for cellular telephone, has bridge that is formed within acoustic impedance layers of acoustic reflector and resonator stack, and piezoelectric layer that is formed over bottom electrode |
| CN103795369A (en) * | 2012-10-26 | 2014-05-14 | 安华高科技通用Ip(新加坡)公司 | Temperature compensated resonator device having low trim sensitivy and method of fabricating the same |
| CN111316566A (en) * | 2017-11-15 | 2020-06-19 | 华为技术有限公司 | Surface acoustic wave device |
| WO2019185363A1 (en) * | 2018-03-29 | 2019-10-03 | Frec'n'sys | Surface acoustic wave device on composite substrate |
| CN112054781A (en) * | 2020-09-11 | 2020-12-08 | 广东广纳芯科技有限公司 | High-performance resonator with double-layer homodromous interdigital transducer structure |
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