CN112615600B - Lamb wave resonator with upper buried electrode and lower buried electrode in opposite proportion - Google Patents
Lamb wave resonator with upper buried electrode and lower buried electrode in opposite proportion Download PDFInfo
- Publication number
- CN112615600B CN112615600B CN202011503388.9A CN202011503388A CN112615600B CN 112615600 B CN112615600 B CN 112615600B CN 202011503388 A CN202011503388 A CN 202011503388A CN 112615600 B CN112615600 B CN 112615600B
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- wave resonator
- lamb wave
- piezoelectric layer
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- electrode
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- 235000019687 Lamb Nutrition 0.000 title claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000005284 excitation Effects 0.000 claims abstract description 6
- 238000003475 lamination Methods 0.000 claims abstract description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000002513 implantation Methods 0.000 description 68
- 239000010410 layer Substances 0.000 description 43
- 230000008878 coupling Effects 0.000 description 19
- 238000010168 coupling process Methods 0.000 description 19
- 238000005859 coupling reaction Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202011503388.9A CN112615600B (en) | 2020-12-18 | 2020-12-18 | Lamb wave resonator with upper buried electrode and lower buried electrode in opposite proportion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011503388.9A CN112615600B (en) | 2020-12-18 | 2020-12-18 | Lamb wave resonator with upper buried electrode and lower buried electrode in opposite proportion |
Publications (2)
Publication Number | Publication Date |
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CN112615600A CN112615600A (en) | 2021-04-06 |
CN112615600B true CN112615600B (en) | 2024-01-26 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202011503388.9A Active CN112615600B (en) | 2020-12-18 | 2020-12-18 | Lamb wave resonator with upper buried electrode and lower buried electrode in opposite proportion |
Country Status (1)
Country | Link |
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CN (1) | CN112615600B (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10236003A1 (en) * | 2002-08-06 | 2004-02-19 | Epcos Ag | Acoustic wave component e.g. for use as filter for GHz frequencies, with metallic electrodes embedded in surface of component substrate |
DE102013221030A1 (en) * | 2012-10-18 | 2014-04-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator device for cellular telephone, has bridge that is formed within acoustic impedance layers of acoustic reflector and resonator stack, and piezoelectric layer that is formed over bottom electrode |
CN103795369A (en) * | 2012-10-26 | 2014-05-14 | 安华高科技通用Ip(新加坡)公司 | Temperature compensated resonator device having low trim sensitivy and method of fabricating the same |
WO2019185363A1 (en) * | 2018-03-29 | 2019-10-03 | Frec'n'sys | Surface acoustic wave device on composite substrate |
CN111316566A (en) * | 2017-11-15 | 2020-06-19 | 华为技术有限公司 | Surface acoustic wave device |
CN112054781A (en) * | 2020-09-11 | 2020-12-08 | 广东广纳芯科技有限公司 | High-performance resonator with double-layer homodromous interdigital transducer structure |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10594292B2 (en) * | 2017-01-30 | 2020-03-17 | Huawei Technologies Co., Ltd. | Surface acoustic wave device |
-
2020
- 2020-12-18 CN CN202011503388.9A patent/CN112615600B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10236003A1 (en) * | 2002-08-06 | 2004-02-19 | Epcos Ag | Acoustic wave component e.g. for use as filter for GHz frequencies, with metallic electrodes embedded in surface of component substrate |
DE102013221030A1 (en) * | 2012-10-18 | 2014-04-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator device for cellular telephone, has bridge that is formed within acoustic impedance layers of acoustic reflector and resonator stack, and piezoelectric layer that is formed over bottom electrode |
CN103795369A (en) * | 2012-10-26 | 2014-05-14 | 安华高科技通用Ip(新加坡)公司 | Temperature compensated resonator device having low trim sensitivy and method of fabricating the same |
CN111316566A (en) * | 2017-11-15 | 2020-06-19 | 华为技术有限公司 | Surface acoustic wave device |
WO2019185363A1 (en) * | 2018-03-29 | 2019-10-03 | Frec'n'sys | Surface acoustic wave device on composite substrate |
CN112054781A (en) * | 2020-09-11 | 2020-12-08 | 广东广纳芯科技有限公司 | High-performance resonator with double-layer homodromous interdigital transducer structure |
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Publication number | Publication date |
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CN112615600A (en) | 2021-04-06 |
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Effective date of registration: 20210715 Address after: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangna Technology Development Co.,Ltd. Address before: 510700 room 1004, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong guangnaixin Technology Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
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Effective date of registration: 20210811 Address after: 510535 Room 201, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangdong Guangdong Hong Kong Macao Dawan District National Nanotechnology Innovation Research Institute Address before: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong Guangna Technology Development Co.,Ltd. |
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Effective date of registration: 20210908 Address after: 510700 room 1004, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong guangnaixin Technology Co.,Ltd. Address before: 510535 Room 201, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong Guangdong Guangdong Hong Kong Macao Dawan District National Nanotechnology Innovation Research Institute |
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