CN112614955A - Organic light emitting diode, display panel, preparation methods and display device - Google Patents
Organic light emitting diode, display panel, preparation methods and display device Download PDFInfo
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H10K50/00—Organic light-emitting devices
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- H10K50/14—Carrier transporting layers
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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Abstract
An organic light emitting diode, a display panel, a preparation method and a display device are provided, wherein the organic light emitting diode comprises: an electron injection layer including an electron transport organic host material and an organic dopant material; the electronegativity of the organic doping material is larger than that of the electron-transporting organic host material. The organic light-emitting diode can reduce water and oxygen erosion and effectively improve the phenomenon of organic light-emitting diode failure.
Description
Technical Field
The invention relates to the technical field of display, in particular to an organic light emitting diode, a display panel, a preparation method and a display device.
Background
An Organic Light-Emitting Diode (OLED) display, also called an Organic electroluminescent display, is a new flat panel display. Compared with the existing liquid crystal display, the OLED display has a series of advantages of self-luminescence, wide viewing angle, ultralight, ultrathin property, high brightness, low power consumption, fast response and the like, and the response speed can reach 1000 times of that of the liquid crystal display, so that the OLED display becomes a very popular flat panel display product at home and abroad and has wide application prospect. The structure of the OLED display comprises: a substrate glass; an anode, an organic functional layer, and a cathode laminated on the substrate glass; and a cover plate encapsulated on the glass substrate.
The organic light emitting diode has high sensitivity to water and oxygen. If residual water and oxygen exist in the preparation process of the organic light-emitting diode or poor packaging of the organic light-emitting diode occurs, the water and oxygen can corrode the organic light-emitting diode, and the organic light-emitting diode is easy to lose efficacy.
Disclosure of Invention
The invention aims to solve the technical problem of effectively improving the failure problem of an organic electroluminescent device caused by water and oxygen erosion in the prior art.
In order to solve the above technical problem, the present invention provides an organic light emitting diode comprising: an electron injection layer including an electron transport organic host material and an organic dopant material; the electronegativity of the organic doping material is larger than that of the electron-transporting organic host material.
Optionally, the organic doping material occupies 5% to 50% of the volume of the electron transport organic host material.
Optionally, the lowest unoccupied molecular orbital of the organic dopant material is lower than the lowest unoccupied molecular orbital of the electron transporting organic host material.
Optionally, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transport organic host material is less than or equal to 1.5 eV.
Optionally, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transport organic host material is greater than or equal to 0.5eV and less than or equal to 1.5 eV.
Optionally, the lowest unoccupied molecular orbital of the organic doping material has an energy level of-3.7 eV to-2.7 eV.
Optionally, the method further includes: a cathode layer on one side of the electron injection layer; and the electron transport layer is positioned on the other side of the electron injection layer.
Optionally, an energy level of a lowest unoccupied molecular orbital of the organic doping material is higher than a work function of the cathode layer and lower than an energy level of a lowest unoccupied molecular orbital of the electron transport layer.
Optionally, the electron transport organic host material is the same as the material of the electron transport layer.
Optionally, the organic doping material is a nitrogen heterocyclic compound.
Optionally, an aromatic compound containing a group of pyridine, pyrimidine, quinoline, purine, phenanthroline, pyridazine, triazine, pteridine, or imidazole.
The invention also provides a preparation method of the organic light-emitting diode, which comprises the following steps: forming an electron injection layer including an electron transport organic host material and an organic dopant material; the electronegativity of the organic doping material is larger than that of the electron-transporting organic host material.
Optionally, the method for forming the electron injection layer includes: forming an electron-transport organic host material by adopting a first evaporation process; forming an organic doping material by adopting a second evaporation process; the second evaporation process is performed simultaneously with the first evaporation process.
Optionally, the organic doping material occupies 5% to 50% of the volume of the electron transport organic host material.
Optionally, the lowest unoccupied molecular orbital of the organic dopant material is lower than the lowest unoccupied molecular orbital of the electron transporting organic host material.
Optionally, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transport organic host material is less than or equal to 1.5 eV.
Optionally, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transport organic host material is greater than or equal to 0.5eV and less than or equal to 1.5 eV.
Optionally, the organic doping material is a nitrogen heterocyclic compound.
Optionally, the method for manufacturing an organic light emitting diode further includes: forming a cathode layer on one side of the electron injection layer; and forming an electron transport layer, wherein the electron transport layer is positioned on the other side of the electron injection layer, and the energy level of the lowest unoccupied molecular orbital of the organic doping material is higher than the work function of the cathode layer and lower than the energy level of the lowest unoccupied molecular orbital of the electron transport layer.
Optionally, the electron transport organic host material is the same as the material of the electron transport layer.
The present invention also provides a display panel including: a substrate; the organic light emitting diode is positioned on the substrate.
The invention also provides a preparation method of the display panel, which comprises the following steps: providing a substrate; and forming an organic light emitting diode on the substrate, wherein the method for forming the organic light emitting diode adopts the preparation method of the organic light emitting diode.
The invention also provides a display device comprising the display panel.
The technical scheme of the invention has the following advantages:
1. the organic light emitting diode provided by the technical scheme of the invention comprises: an electron injection layer including an electron transport organic host material and an organic dopant material. Because the electron-transporting organic main body material and the organic doping material are both organic materials, the electron injection layer is prevented from using active metal, so that the probability that the electron injection layer is corroded by water and oxygen is reduced, and the problem of failure of the organic light-emitting diode is solved.
And secondly, because the electron-transporting organic main body material and the organic doping material are both organic materials, the shrinkage of corresponding pixels caused by the reaction of the electron injection layer and the active substance can be avoided, and the reduction of the light-emitting uniformity of the pixels can be avoided.
And thirdly, the electron injection layer comprises an electron transmission type organic main body material, the electron transmission type organic main body material enables the electron injection layer to have better electron transmission capability, the electron injection layer also comprises an organic doping material, and the electron absorption capability of the electron injection layer is adjusted through the organic doping material, so that the electrical property of the electron injection layer is optimized.
The electronegativity of the organic doping material is greater than that of the electron transport type organic main body material, the electron withdrawing capability of the organic doping material is greater than that of the electron transport type organic main body material, so that the overall electron withdrawing capability of the electron injection layer is improved, the organic doping material is doped in the electron transport type organic main body material, the overall Lowest Unoccupied Molecular Orbital (LUMO) energy level of the electron injection layer is reduced, the injection barrier of electrons is reduced, and the electrons are easily injected into the electron injection layer.
2. Furthermore, the organic doping material occupies 5-50% of the volume of the electron transport type organic main body material, and the organic doping material occupies more than or equal to 5% of the volume of the electron transport type organic main body material, so that the organic doping material is ensured to better adjust the electron withdrawing capability of the electron injection layer, and the electron injection performance of the electron injection layer is optimized. The organic doping material occupies less than or equal to 50% of the volume of the electron transport type organic main body material, and the electron injection layer is guaranteed to have high electron transport capacity.
3. Further, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transport organic host material is less than or equal to 1.5eV, so that the Lowest Unoccupied Molecular Orbital (LUMO) energy level of the whole electron injection layer is not too low, and a situation where the lowest unoccupied molecular orbital of the whole electron injection layer is lower than the work function of the cathode layer is avoided.
4. Further, the energy level difference between the lowest unoccupied molecular orbital of the organic doping material and the lowest unoccupied molecular orbital of the electron transport type organic host material is greater than or equal to 0.5eV, and the energy level difference between the lowest unoccupied molecular orbital of the organic doping material and the lowest unoccupied molecular orbital of the electron transport type organic host material is not too small, so that the organic doping material can better adjust the Lowest Unoccupied Molecular Orbital (LUMO) energy level of the whole electron injection layer, and optimize the injection barrier of electrons.
5. Further, still include: a cathode layer on one side of the electron injection layer; the electron transport layer is positioned on the other side of the electron injection layer; an energy level of a lowest unoccupied molecular orbital of the organic doping material is higher than a work function of the cathode layer and lower than an energy level of a lowest unoccupied molecular orbital of the electron transport layer. Since the energy level of the lowest unoccupied molecular orbital of the organic dopant material is lower than the energy level of the lowest unoccupied molecular orbital of the electron transport layer, the energy level of the lowest unoccupied molecular orbital of the electron injection layer is lowered, and electrons easily enter the electron injection layer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the invention.
Detailed Description
As described in the background, the organic electroluminescent device of the prior art has a problem of failure due to water-oxygen attack.
Currently, there are several methods for dealing with the failure of the organic light emitting diode device, one method is: the packaging performance of a thin film packaging layer covering the organic light-emitting diode is improved, so that the water and oxygen resistance of the thin film packaging layer is improved. However, when the organic light emitting diode is damaged during the use process, so that the encapsulation performance of the thin film encapsulation layer is reduced, or when water and oxygen are introduced into the organic light emitting diode before the thin film encapsulation layer during the manufacturing process, the shielding function of the thin film encapsulation layer on the water and oxygen is reduced, or the water and oxygen can corrode the organic light emitting diode, which is caused by the corrosion of the water and oxygen. It can be seen that the above method has a limitation to improve the problem of failure caused by water and oxygen attack on the organic light emitting diode.
Research shows that in the organic light-emitting diode, the region sensitive to water and oxygen is the region where the electron injection layer is located, and generally, the electron injection layer usually adopts active metal, and the active metal is easy to react with water and oxygen to cause the electron injection layer to be corroded by the water and oxygen, thereby causing the organic light-emitting diode to lose efficacy. Therefore, the stability of the electron injection layer can be improved, and the stability of the organic light emitting diode can be effectively improved.
On this basis, an embodiment of the present invention provides an organic light emitting diode, referring to fig. 1, including: an electron injection layer 190, the electron injection layer 190 comprising an electron transport organic host material and an organic dopant material; the electronegativity of the organic doping material is larger than that of the electron-transporting organic host material.
Because the electron-transporting organic host material and the organic doping material are both organic materials, the electron injection layer 190 is prevented from using active metal, so that the probability that the electron injection layer 190 is corroded by water and oxygen is reduced, and the problem of failure of the organic light-emitting diode is solved.
Secondly, since the electron-transporting organic host material and the organic dopant material are both organic materials, the shrinkage of the corresponding pixel caused by the reaction between the electron injection layer 190 and the active material can be avoided, and the reduction of the light-emitting uniformity of the pixel light emission can be avoided.
Thirdly, since the electron injection layer 190 includes an electron transport type organic host material, the electron transport type organic host material enables the electron injection layer to have a better electron transport capability, the electron injection layer 190 further includes an organic doping material, and the electron absorption capability of the electron injection layer is adjusted by the organic doping material, so that the electrical performance of the electron injection layer 190 is optimized.
It should be noted that, in this embodiment, since the stability of the electron injection layer 190 is improved fundamentally, that is, the sensitivity of the electron injection layer 190 to water and oxygen is reduced, the problem that the organic light emitting diode fails due to the invasion of water and oxygen into the organic light emitting diode can be solved fundamentally without depending on the encapsulation performance of the encapsulation thin film layer on the organic light emitting diode.
In one embodiment, the electronegativity of the organic dopant material is greater than the electronegativity of the electron transport type organic host material, the electron withdrawing ability of the organic dopant material is greater than the electron withdrawing ability of the electron transport type organic host material, so that the electron withdrawing ability of the whole electron injection layer is improved, the organic dopant material is doped in the electron transport type organic host material, the Lowest Unoccupied Molecular Orbital (LUMO) level of the whole electron injection layer 190 is reduced, the injection barrier of electrons is reduced, and electrons are easily injected into the electron injection layer 190.
In one embodiment, the lowest unoccupied molecular orbital of the organic dopant material is lower than the lowest unoccupied molecular orbital of the electron transporting organic host material.
In a specific embodiment, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transporting organic host material is less than or equal to 1.5eV, so that the Lowest Unoccupied Molecular Orbital (LUMO) energy level of the whole electron injecting layer is not too low, and a situation where the lowest unoccupied molecular orbital of the whole electron injecting layer is lower than the work function of the cathode layer is avoided. Preferably, the energy level difference between the lowest unoccupied molecular orbital of the organic dopant material and the lowest unoccupied molecular orbital of the electron transport organic host material is greater than or equal to 0.5eV and less than or equal to 1.5eV, and the energy level difference between the lowest unoccupied molecular orbital of the organic dopant material and the lowest unoccupied molecular orbital of the electron transport organic host material is not too small, so that the organic dopant material can better adjust the Lowest Unoccupied Molecular Orbital (LUMO) level of the whole electron injection layer and optimize the injection barrier of electrons.
In a specific embodiment, the lowest unoccupied molecular orbital of the organic doping material has an energy level of-3.7 eV to-2.7 eV.
The volume percentage of the organic dopant material to the electron transporting organic host material needs to be selected within a suitable range. In one embodiment, the volume percentage of the organic doping material occupying the electron transport type organic host material is 5% -50%, and the volume percentage of the organic doping material occupying the electron transport type organic host material is greater than or equal to 5%, so that the organic doping material is ensured to adjust the electron withdrawing capability of the electron injection layer well, and the electron injection performance of the electron injection layer is optimized. The organic doping material occupies less than or equal to 50% of the volume of the electron transport type organic host material, and ensures that the electron injection layer 190 has high electron transport capability.
In this embodiment, the organic light emitting diode further includes: a cathode layer 150 on one side of the electron injection layer 190; an electron transport layer 110 on the other side of the electron injection layer 190. The energy level of the lowest unoccupied molecular orbital of the organic doping material is lower than that of the electron transport layer 110. Since the energy level of the lowest unoccupied molecular orbital of the organic dopant material is lower than that of the electron transport layer 110, the energy level of the lowest unoccupied molecular orbital of the electron injection layer 190 is lowered, and electrons easily enter the electron injection layer 190.
In a specific embodiment, the difference between the energy level of the lowest unoccupied molecular orbital of the organic doping material and the work function of the cathode layer 150 is less than 0.5 eV. Specifically, the energy level of the lowest unoccupied molecular orbital of the organic doping material is greater than the work function of the cathode layer 150, and the difference between the energy level of the lowest unoccupied molecular orbital of the organic doping material and the work function of the cathode layer 150 is less than 0.5 eV; alternatively, the energy level of the lowest unoccupied molecular orbital of the organic doping material is smaller than the work function of the cathode layer 150, and the difference between the energy level of the lowest unoccupied molecular orbital of the organic doping material and the work function of the cathode layer 150 is smaller than 0.5 eV. In one embodiment, the electron transporting organic host material is the same as the material of the electron transporting layer 110. In other embodiments, the electron transporting organic host material is not the same as the material of the electron transporting layer 110.
In this embodiment, the organic doping material is a nitrogen heterocyclic compound, and has the following effects: the nitrogen heterocyclic compound is of a nitrogen heterocyclic structureSP in (1)2The hybridized N atoms can provide lone-pair electrons and H atoms in the electron-transporting organic host material to form interaction, so that the electronic structure of the electron-transporting organic host material is changed, the Lowest Unoccupied Molecular Orbital (LUMO) energy level of the electron injection layer 190 is reduced, and better energy level matching between the electron injection layer 190 and the cathode layer is realized.
In a specific embodiment, the nitrogen heterocyclic compound is an aromatic compound containing a group of pyridine, pyrimidine, quinoline, purine, phenanthroline, pyridazine, triazine, pteridine or imidazole.
The organic light emitting diode includes: an anode layer 140 and a cathode layer 150 oppositely disposed, and a hole injection layer 160, a hole transport layer 120, an electron blocking layer 170, a light emitting layer 130, a hole blocking layer 180, an electron transport layer 110, and an electron injection layer 190 located between the anode layer 140 and the cathode layer 150. In this embodiment, the hole injection layer 160 is located between the anode layer 140 and the light emitting layer 130, the electron injection layer 190 is located between the cathode layer 150 and the light emitting layer 130, the hole transport layer 120 is located between the hole injection layer 160 and the light emitting layer 130, the electron transport layer 110 is located between the electron injection layer 190 and the light emitting layer 130, the electron blocking layer 170 is located between the hole transport layer 120 and the light emitting layer 130, and the hole blocking layer 180 is located between the electron transport layer 110 and the light emitting layer 130.
Correspondingly, another embodiment of the present invention further provides a method for manufacturing an organic light emitting diode, including: forming an electron injection layer 190, wherein the electron injection layer 190 comprises an electron transport organic host material and an organic dopant material; the electronegativity of the organic doping material is larger than that of the electron-transporting organic host material.
The method of forming the electron injection layer 190 includes: forming an electron-transport organic host material by adopting a first evaporation process; forming an organic doping material by adopting a second evaporation process; the second evaporation process is performed simultaneously with the first evaporation process.
In one embodiment, the organic dopant material occupies 5% to 50% by volume of the electron transporting organic host material.
The electronegativity of the organic doping material is larger than that of the electron-transporting organic host material.
The lowest unoccupied molecular orbital of the organic dopant material is lower than the lowest unoccupied molecular orbital of the electron transporting organic host material.
In one embodiment, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transporting organic host material is less than or equal to 1.5 eV.
In one embodiment, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transporting organic host material is greater than or equal to 0.5eV and less than or equal to 1.5 eV.
In one embodiment, the organic doping material is a nitrogen heterocyclic compound. In a specific embodiment, the nitrogen heterocyclic compound is an aromatic compound containing a group of pyridine, pyrimidine, quinoline, purine, phenanthroline, pyridazine, triazine, pteridine or imidazole.
The preparation method of the organic light emitting diode further comprises the following steps: forming a cathode layer 150, the cathode layer 150 being located at one side of the electron injection layer 190; forming an electron transport layer 110, the electron transport layer 110 being located on the other side of the electron injection layer 190, preferably, an energy level of the lowest unoccupied molecular orbital of the organic doping material is lower than an energy level of the lowest unoccupied molecular orbital of the electron transport layer 110, and preferably, a difference between the energy level of the lowest unoccupied molecular orbital of the organic doping material and the work function of the cathode layer 150 is less than 0.5 eV.
The electron transport organic host material is the same as the material of the electron transport layer 110.
In this embodiment, the method further includes: a step of forming the anode layer 140, a step of forming the hole injection layer 160, a step of forming the hole transport layer 120, a step of forming the electron blocking layer 170, a step of forming the light emitting layer 130, and a step of forming the hole blocking layer 180.
Specifically, in one embodiment, after the anode layer 140 is formed, the hole injection layer 160, the hole transport layer 120, the electron blocking layer 170, the light emitting layer 130, the hole blocking layer 180, the electron transport layer 110, the electron injection layer 190, and the cathode layer 150 are sequentially formed on the anode layer 140 from bottom to top.
Another embodiment of the present invention further provides a display panel, including: a substrate; in the organic light emitting diode, the organic light emitting diode is located on the substrate.
In this embodiment, the substrate is an array substrate, and the array substrate includes: the OLED display panel comprises a substrate base plate and an array circuit layer located on the substrate base plate, the OLED light-emitting unit is electrically connected with the array circuit layer, and the display panel is an AMOLED (Active-matrix organic light emitting diode) type display panel. In other embodiments, the display panel is a PMOLED (Passive-organic light emitting diode) type display panel.
Correspondingly, the invention also provides a preparation method of the display panel, which comprises the following steps: providing a substrate; the organic light emitting diode is formed on the substrate, and the method for forming the organic light emitting diode refers to the preparation method of the organic light emitting diode.
Correspondingly, another embodiment of the present invention further provides a display device, including the display panel described above.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. An organic light emitting diode, comprising:
an electron injection layer including an electron transport organic host material and an organic dopant material; the electronegativity of the organic doping material is larger than that of the electron-transporting organic host material.
2. The organic light-emitting diode of claim 1, wherein the organic dopant material occupies 5-50% of the volume of the electron-transporting organic host material.
3. The organic light-emitting diode according to claim 1 or 2, wherein the lowest unoccupied molecular orbital of the organic dopant material is lower than the lowest unoccupied molecular orbital of the electron transporting organic host material;
preferably, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transporting organic host material is less than or equal to 1.5 eV;
preferably, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transporting organic host material is greater than or equal to 0.5eV and less than or equal to 1.5 eV;
preferably, the lowest unoccupied molecular orbital of the organic doping material has an energy level of-3.7 eV to-2.7 eV.
4. The organic light-emitting diode of claim 1, further comprising: a cathode layer on one side of the electron injection layer; the electron transport layer is positioned on the other side of the electron injection layer;
preferably, the energy level of the lowest unoccupied molecular orbital of the organic doping material is lower than the energy level of the lowest unoccupied molecular orbital of the electron transport layer;
preferably, the difference between the energy level of the lowest unoccupied molecular orbital of the organic doping material and the work function of the cathode layer is less than 0.5 eV;
preferably, the electron transport organic host material is the same as the material of the electron transport layer.
5. The organic light-emitting diode of claim 1, wherein the organic doping material is a nitrogen heterocyclic compound;
preferably, the nitrogen heterocyclic compound is an aromatic compound containing a group of pyridine, pyrimidine, quinoline, purine, phenanthroline, pyridazine, triazine, pteridine or imidazole.
6. A method for preparing an Organic Light Emitting Diode (OLED), comprising:
and forming an electron injection layer, wherein the electron injection layer comprises an electron transport type organic main body material and an organic doping material, and the electronegativity of the organic doping material is greater than that of the electron transport type organic main body material.
7. The method of claim 6, wherein the method of forming the electron injection layer comprises: forming an electron-transport organic host material by adopting a first evaporation process; forming an organic doping material by adopting a second evaporation process; carrying out a second evaporation process while carrying out the first evaporation process;
preferably, the organic doping material occupies 5-50% of the volume of the electron-transporting organic host material;
preferably, the lowest unoccupied molecular orbital of the organic dopant material is lower than the lowest unoccupied molecular orbital of the electron transporting organic host material;
preferably, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transporting organic host material is less than or equal to 1.5 eV;
preferably, the difference between the energy level of the lowest unoccupied molecular orbital of the organic dopant material and the energy level of the lowest unoccupied molecular orbital of the electron transporting organic host material is greater than or equal to 0.5eV and less than or equal to 1.5 eV;
preferably, the organic doping material is a nitrogen heterocyclic compound;
preferably, the method for manufacturing an organic light emitting diode further includes: forming a cathode layer on one side of the electron injection layer; forming an electron transport layer on the other side of the electron injection layer, preferably, the lowest unoccupied molecular orbital of the organic doping material has an energy level lower than that of the electron transport layer, and preferably, the difference between the energy level of the lowest unoccupied molecular orbital of the organic doping material and the work function of the cathode layer is less than 0.5 eV;
preferably, the electron transport organic host material is the same as the material of the electron transport layer.
8. A display panel, comprising:
a substrate;
an organic light emitting diode according to any one of claims 1 to 5, located on the substrate.
9. A method for manufacturing a display panel, comprising:
providing a substrate;
forming an organic light emitting diode on the substrate, the method of forming the organic light emitting diode using the method of manufacturing an organic light emitting diode according to claim 6 or 7.
10. A display device characterized by comprising the display panel according to claim 8.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1820552A (en) * | 2003-07-10 | 2006-08-16 | 理想星株式会社 | Light-emitting element and light-emitting device |
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