CN112611501A - Resonant differential pressure sensor and compensation method - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 15
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- 239000010703 silicon Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 239000012528 membrane Substances 0.000 claims description 15
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
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Abstract
The present disclosure provides a resonant differential pressure sensor, comprising: the device comprises a cover plate and a body which are bonded together through an anode, a first resonator, a second resonator and a third resonator are manufactured on a device layer, a first pressure sensitive film is manufactured on a substrate layer, the first resonator is located in the center of the first pressure sensitive film, the second resonator is located in the edge area of the first pressure sensitive film, the third resonator is located on any side frame outside the first pressure sensitive film on the device layer, a getter groove is manufactured on a glass layer, and the getter groove and the third resonator are located on frames on two sides of the first pressure sensitive film respectively. The resonant differential pressure sensor can perform temperature compensation without an external temperature sensitive element, overcomes the problems of uneven temperature field distribution and inaccurate temperature measurement, can realize static pressure compensation without an external pressure sensitive element, reduces the compensation cost, realizes vacuum packaging by using a bonding process, and has simple process flow.
Description
Technical Field
The disclosure relates to the field of silicon resonance pressure sensors, in particular to a silicon resonance differential pressure sensor with temperature compensation and static pressure compensation and a compensation method thereof.
Background
The resonant MEMS differential pressure sensor is widely applied to the fields of oil exploration, industrial control, aerospace and the like, and has the excellent characteristics of high precision, good long-term stability, digital output, strong anti-interference capability and the like.
For a resonant differential pressure sensor, the young modulus of a silicon material is influenced by temperature, and the change of the temperature can cause the deformation of a geometric structure, and the influence of the young modulus and the change of the temperature can change the resonant frequency of a resonator, so that the temperature of the working environment of the resonant differential pressure sensor can cause errors on the differential pressure measurement of the resonant differential pressure sensor. In addition, the resonant differential pressure sensor often works in an environment with large static pressure and small differential pressure, the static pressure can cause the section of the diaphragm protected by the cap to deform, the deformation can shift the resonant frequency of the resonant beam, and therefore the static pressure can also generate certain errors on the differential pressure measurement.
In the existing vacuum packaging technology of the resonant differential pressure sensor, one is to adopt selective epitaxial growth and sacrificial layer selective etching to realize vacuum sealing of the resonator, the process is complex and lacks flexibility, and the realization difficulty is large; one method is to adopt the processes of depositing polycrystalline silicon by LPCVD (low pressure chemical vapor deposition) and releasing a sacrificial layer and the like to realize vacuum sealing of the polycrystalline silicon double-end clamped beam, but the polycrystalline silicon has inferior performance in the aspects of material aging, hysteresis, fatigue, creep, yield and the like to monocrystalline silicon.
The wafer-level vacuum packaging is realized by adopting the anodic bonding process, and the method has the advantages of simple process, high packaging strength and the like. The present disclosure provides a resonant differential pressure sensor integrating three resonators, and temperature compensation and static pressure compensation are realized through frequency output of the three resonators.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
Technical problem to be solved
In view of the above disadvantages of the prior art, a primary object of the present disclosure is to provide a resonant differential pressure sensor with a simple manufacturing process, so as to reduce a temperature error and a static pressure error of the resonant differential pressure sensor during differential pressure measurement, and improve the accuracy of differential pressure measurement.
(II) technical scheme
In order to achieve the above object, according to one aspect of the present disclosure, there is provided a resonant differential pressure sensor including:
a body 100 and a cover 200;
the cover plate 200 and the body 100 are bonded together through the anode;
body 100 includes device layer 110 and substrate layer 130;
a first resonator 140, a second resonator 150 and a third resonator 160 are manufactured on the device layer 110;
a first pressure sensitive membrane 132 is formed on the substrate layer 130;
the first resonator 140 is located at the center of the first pressure-sensitive film 132, the second resonator 150 is located at the edge region of the first pressure-sensitive film 132, and the third resonator 160 is located on any side frame outside the first pressure-sensitive film 132 region on the device layer 110;
the cover plate 200 includes a glass layer 210 and a silicon layer 220;
the glass layer 210 and the silicon layer 220 are bonded together through an anode;
a getter groove 211 is formed on the glass layer 210;
the getter groove 211 and the third resonator 160 are respectively positioned on the rims at both sides of the first pressure sensitive film 132.
Preferably, the body 100 further comprises a buried oxide layer 120, the buried oxide layer 120 being located between the device layer 110 and the substrate layer 130.
Preferably, electrode 170 is formed on device layer 110, and substrate layer 130 has via hole 131 formed therein, where via hole 131 is a through-silicon via etched into buried oxide layer 120.
Preferably, the glass layer 210 is formed with a third resonant cavity 212, a second resonant cavity 213 and a first resonant cavity 214, and the silicon layer 220 is etched with a second pressure-sensitive film 221.
Preferably, the second resonator 150 is identical in magnitude and opposite in direction to the output of the first resonator 140.
Preferably, the first resonator 140, the second resonator 150, and the third resonator 160 have the same structural size.
Preferably, the positions of the lead holes 131 correspond one-to-one to the positions of the electrodes 170.
Preferably, the second pressure sensitive membrane 221 is located at a central position of the silicon layer 220, corresponding to the position of the first pressure sensitive membrane 132.
Preferably, the positions of the first resonator 140, the second resonator 150 and the third resonator 160 correspond to the positions of the first resonant cavity 214, the second resonant cavity 213 and the third resonant cavity 212 in a one-to-one correspondence manner.
On the other hand, the present disclosure also provides a compensation method for a resonant differential pressure sensor, which utilizes the resonant differential pressure sensor, and the method includes:
selecting m temperature calibration points in a temperature working range of the resonant differential pressure sensor, selecting n static pressure calibration points in a static pressure working range of the resonant differential pressure sensor, selecting k differential pressure working points in a differential pressure working range of the resonant differential pressure sensor to obtain m multiplied by n multiplied by k working points, wherein each working point comprises one temperature calibration point, one static pressure calibration point and one differential pressure calibration point;
measuring the output frequency of the first resonator 140, the second resonator 150 and the third resonator 160 at each working point to obtain m × n × k groups of output data, wherein each group of output data comprises the output frequency of one first resonator 140, the output frequency of one second resonator 150 and the output frequency of one third resonator 160 at the same working point;
and carrying out ternary polynomial fitting on the m multiplied by n multiplied by k groups of output frequencies to obtain a differential pressure function after temperature compensation and static pressure compensation.
(III) advantageous effects
According to the method, three resonators are constructed on an SOI device layer and are sensitive to differential pressure, static pressure and temperature at the same time, and the output of the three resonators can be used for realizing temperature compensation and static pressure compensation of the resonant differential pressure sensor.
The resonant differential pressure sensor provided by the disclosure can perform temperature compensation without an external temperature sensitive element, overcomes the problems of uneven temperature field distribution and inaccurate temperature measurement, can realize static pressure compensation without an external pressure sensitive element, and reduces the compensation cost.
Compared with the prior art, the vacuum packaging is realized by using the bonding process, and the process flow is simpler.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a three-dimensional structural diagram of a resonant differential pressure sensor according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a back surface of a resonant differential pressure sensor according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram of a resonant cavity and a getter groove on a package cover plate of a resonant differential pressure sensor according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram of a second pressure-sensitive membrane on a package cover plate of a resonant differential pressure sensor according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram illustrating temperature compensation and static pressure compensation of a resonant differential pressure sensor according to an embodiment of the present disclosure;
fig. 6 is a differential pressure measurement mode of a resonant differential pressure sensor for implementing temperature compensation and static pressure compensation according to an embodiment of the present disclosure;
fig. 7 illustrates a method for manufacturing a resonant differential pressure sensor according to an embodiment of the present disclosure.
Description of the reference numerals
100 sensor body 110 device layer 120 buried oxide layer
130 backing layer 131 lead aperture 132 first pressure sensitive membrane
140 first resonator 150 second resonator 160 third resonator
170 electrode 190 electrical connection structure 200 cover plate
210 glass layer 220 silicon layer 211 getter channel
212 third resonant cavity 213 second resonant cavity 214 first resonant cavity
221 second pressure sensitive membrane
Detailed Description
For purposes of promoting a clear understanding of the objects, features, aspects and advantages of the present disclosure, the present disclosure will be described in further detail below with reference to specific embodiments thereof, which are illustrated in the accompanying drawings. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the scope of protection of the present disclosure.
An embodiment of the present disclosure provides a resonant differential pressure sensor, as shown in fig. 1, 2, 3, and 4, including:
the body 100 and the cover plate 200 are bonded together through the anode, and the cover plate 200 and the body 100 are bonded together through the anode to form a vacuum package.
Body 100 includes a device layer 110, a buried oxide layer 120, and a substrate layer 130.
The buried oxide layer 120 serves as an insulating layer to electrically isolate the device layer 110 from the substrate layer 130, and on the other hand, the buried oxide layer 120 also serves as an anchor point between the pressure sensitive film 132 and the first resonator 140, the second resonator 150 and the third resonator 160 to transmit stress to the resonators, so that the natural frequencies of the resonators are changed.
The substrate layer 130 is formed with a first pressure sensitive film 132 and a via hole 131, and the via hole 131 is a through silicon via etched into the buried oxide layer 120.
The positions of the lead holes 131 correspond one-to-one to the positions of the electrodes 170.
The first resonator 140, the second resonator 150, and the third resonator 160 have the same structural size. The first resonator 140 and the second resonator 150 are located at the middle and edge regions of the pressure sensitive membrane, respectively, and the frequency outputs of the first resonator 140 and the second resonator 150 enable the resonant differential pressure sensor to simultaneously perform temperature compensation based on differential pressure measurement. In addition, the second resonator 150 has an output with the same size and opposite direction as the first resonator 140, which can increase the sensitivity of the differential pressure measurement.
The third resonator 160 is located on any side frame outside the first pressure sensitive film 132 area on the device layer 110, and the third resonator 160 located in the frame area is more sensitive to static pressure than the first resonator 140 and the second resonator 150, so that the frequency output of the third resonator 160 can enable the resonant differential pressure sensor to simultaneously perform static pressure compensation on the basis of differential pressure measurement and temperature compensation.
The cover plate 200 includes a glass layer 210 and a silicon layer 220.
A getter groove 211, a third resonant cavity 212, a second resonant cavity 213 and a first resonant cavity 214 are formed on the glass layer 210.
The positions of the first resonator 140, the second resonator 150 and the third resonator 160 correspond to the positions of the first resonant cavity 214, the second resonant cavity 213 and the third resonant cavity 212 one to one.
The getter groove 211 and the third resonator 160 are respectively located on the rims at both sides of the first pressure sensitive film 132, and the getter groove 211 is used for sputtering a getter.
The silicon layer 220 is etched with a second pressure sensitive film 221, and the second pressure sensitive film 221 is located at the center of the silicon layer 220 and corresponds to the first pressure sensitive film 132.
Fig. 2 is a schematic structural diagram of a back surface of a resonant differential pressure sensor according to an embodiment of the present disclosure, as shown in fig. 2, a first pressure-sensitive membrane 132 is formed by etching a substrate layer 130 of the sensor to a certain depth, and the first pressure-sensitive membrane 132 directly acts on one of the pressure P1 in the differential pressure measurement, so as to generate deformation and stress. And etching the buried oxide layer 120 in the frame region to form a lead hole 131, so that the electrode on the device layer 110 is electrically connected with the outside through the lead hole 131.
Fig. 3 is a schematic diagram of a resonant cavity and a getter groove on a package cover plate of a resonant differential pressure sensor according to an embodiment of the present disclosure, and as shown in fig. 3, a pattern with a certain depth is formed on a glass layer 210 by an etching method, where the pattern includes a first resonant cavity 214 for providing a resonator vibration space, a second resonant cavity 213, a third resonant cavity 212, and a getter groove 211 for sputtering a getter to maintain an intra-cavity vacuum environment. The first resonant cavity 214, the second resonant cavity 213 and the third resonant cavity 212 are made to avoid physical contact with the resonator to affect the vibration of the resonator. Getter slot 211 is used to sputter a getter to maintain a vacuum environment within the chamber.
Fig. 4 is a schematic diagram of a second pressure-sensitive membrane on a package cover plate of a resonant differential pressure sensor according to an embodiment of the present disclosure, as shown in fig. 4, a central position of a silicon layer 220 is etched to a certain depth for forming a second pressure-sensitive membrane 221, and the second pressure-sensitive membrane 221 is used for sensing another pressure source of differential pressure.
Fig. 5 is a schematic diagram of temperature compensation and static pressure compensation of a resonant differential pressure sensor according to an embodiment of the present disclosure, where the resonant differential pressure sensor is utilized, and a specific compensation process is as follows:
selecting m calibration points within the temperature working range of minus 45-85 ℃ of the resonant differential pressure sensor;
selecting n calibration points within the static pressure working range of 0-1 MPa of the resonant differential pressure sensor;
selecting k working points within the differential pressure working range of-100 to 100kPa of the resonant differential pressure sensor;
obtaining mxnxk working points, each of which comprises a temperature calibration point, a static pressure calibration point and a differential pressure calibration point, measuring the output frequency of the first resonator 140, the second resonator 150 and the third resonator 160 at each working point to obtain mxnxk groups of output data, wherein each group of output data comprises the output frequency of the first resonator 140, the output frequency of the second resonator 150 and the output frequency of the third resonator 160 at the same working point;
the above-mentionedThe outputs of the first resonator 140, the second resonator 150, and the third resonator 160 are f1，f2，f3。
The frequencies of the three resonator outputs are related to differential pressure, temperature and static pressure and are mathematically expressed as follows:
wherein, Pd，T，PsRespectively representing differential pressure, temperature, static pressure. Some mathematical variation of the above equation can yield the following equation:
wherein, PdIs a compensation function for differential pressure, T is a compensation function for temperature, PsIs a compensation function for static pressure.
At this time, assume PdIs about f1，f2，f3Is expressed as follows:
Pd＝a0+a1f1+a2f2+a3f3+a4f1f2+a5f2f3+a6f1f3+a7f1 2+a8f2 2+a9f3 2+a10f1f2f3+a11f1 2f2+a12f1 2f3+a13f1f2 2+a14f2 2f3+a15f1f3 2+a16f2f3 2+a17f1 3+a18f2 3+a19f3 3+…
by calibrationFitting the obtained data to the polynomial to obtain PdAbout f1，f2，f3I.e. the differential pressure function.
Fig. 6 is a differential pressure measurement mode of a resonant differential pressure sensor for implementing temperature compensation and static pressure compensation according to an embodiment of the present disclosure. The specific differential pressure measurement mode is as follows:
the resonant differential pressure sensor is placed in a working environment with certain temperature, static pressure and differential pressure, the resonant frequencies of the first resonator 140, the second resonator 150 and the third resonator 160 are detected through a circuit, and the outputs of the first resonator 140, the second resonator 150 and the third resonator 160 are respectively f1，f2，f3。
And writing the fitted differential pressure function into a microprocessor in a program mode.
Will f is1，f2，f3The differential pressure output after temperature compensation and static pressure compensation can be obtained after the differential pressure output is input into the microprocessor.
Fig. 7 shows a method for manufacturing a resonant differential pressure sensor according to an embodiment of the present disclosure, as shown in fig. 7, where the body 100 is an SOI, the silicon layer 210 is a silicon wafer, and the glass layer 220 is borosilicate glass, the method mainly includes the following steps:
s101, throwing photoresist on the device layer 110 of the SOI to serve as a mask, and etching a first resonator 140, a second resonator 150 and a third resonator 160;
s102, releasing the first resonator 140, the second resonator 150 and the third resonator 160 by gaseous hydrofluoric acid, removing the oxygen buried layers at the three resonators by the gaseous hydrofluoric acid, taking away water vapor on the surface by isopropanol, and circularly completing the release of the three resonators for multiple times;
s103, bonding the silicon wafer and the borosilicate glass anode to form a cover plate 200;
s104, throwing photoresist on the silicon surface of the cover plate 200 to be used as a mask to etch a second pressure sensitive film 221;
s105, sputtering a metal mask on the glass surface of the cover plate 200, patterning the metal mask through photoresist throwing photoetching, taking metal and photoresist as masks, and etching the glass by using a gaseous hydrofluoric acid dry method to form a third resonant cavity 212, a second resonant cavity 213, a first resonant cavity 214 and a getter groove 211;
s106, bonding the manufactured cover plate 200 with an SOI anode to form vacuum packaging of the resonator;
s107, etching the SOI substrate layer 130 by adopting a composite mask consisting of metal oxide and photoresist to form a first pressure sensitive film 132 and a lead hole 131;
and S108, removing the buried oxide layer at the position of the lead hole 131 of the SOI substrate layer 130 by using gaseous hydrofluoric acid, sputtering an electrode in the lead hole 131, and finally performing wire bonding to form the electrical connection of the device and the outside.
From the above description, those skilled in the art should clearly understand the design and manufacturing method and compensation method of the resonant differential pressure sensor with temperature compensation and static pressure compensation according to the present disclosure.
It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Furthermore, the above definitions of the various elements and methods are not limited to the various ways mentioned in the examples, which can be easily modified or substituted by a person skilled in the art, for example:
(1) the temperature compensation and static pressure compensation method proposed by the present disclosure is described with an H-type resonator for electromagnetic excitation and electromagnetic detection, and the method can be applied to resonant differential pressure sensors of any form of three-resonator structure, such as a resonator for electrostatic excitation capacitance detection;
(2) the resonant differential pressure sensor provided by the present disclosure uses the frequency outputs of the three resonators to perform temperature compensation and static pressure compensation methods, including but not limited to polynomial fitting methods, and other methods such as adjustment coefficient methods are also possible;
(3) directional phrases used in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., refer only to the orientation of the drawings and are not intended to limit the scope of the present disclosure;
(4) the embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e. technical features in different embodiments may be freely combined to form further embodiments.
In summary, the present disclosure provides a resonant differential pressure sensor with temperature compensation and static pressure compensation, which can implement temperature compensation and static pressure compensation in the full temperature range, the full differential pressure range and the static pressure range without a temperature sensitive element and a static pressure sensitive element, and improve the accuracy of differential pressure measurement of the resonant differential pressure sensor.
The above-mentioned embodiments, objects, technical solutions and advantages of the present disclosure are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present disclosure, and are not intended to limit the present disclosure, and those skilled in the art will understand that various combinations and/or combinations of the various embodiments of the present disclosure and/or the features recited in the claims can be made, and even if such combinations and/or combinations are not explicitly described in the present disclosure, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A resonant differential pressure sensor, comprising:
a body (100) and a cover plate (200);
the cover plate (200) and the body (100) are bonded together through an anode;
the body (100) comprises: a device layer (110) and a substrate layer (130);
a first resonator (140), a second resonator (150) and a third resonator (160) are manufactured on the device layer (110);
a first pressure sensitive film (132) is manufactured on the substrate layer (130);
the first resonator (140) is located at the center of the first pressure sensitive film (132), the second resonator (150) is located at the edge area of the first pressure sensitive film (132), and the third resonator (160) is located on any side frame outside the first pressure sensitive film (132) area on the device layer (110);
the cover plate (200) includes: a glass layer (210) and a silicon layer (220);
the glass layer (210) and the silicon layer (220) are bonded together through an anode;
a getter groove (211) is formed in the glass layer (210);
the getter groove (211) and the third resonator (160) are respectively positioned on the frames at two sides of the first pressure sensitive film (132).
2. The resonant differential pressure sensor according to claim 1,
the body (100) further comprises a buried oxide layer (120), the buried oxide layer (120) being located between the device layer (110) and a substrate layer (130).
3. The resonant differential pressure sensor according to claim 1,
an electrode (170) is manufactured on the device layer (110);
and a lead hole (131) is formed in the substrate layer (130), and the lead hole (131) is a through silicon via etched to the buried oxide layer (120).
4. The resonant differential pressure sensor according to claim 1,
a third resonant cavity (212), a second resonant cavity (213) and a first resonant cavity (214) are manufactured on the glass layer (210);
a second pressure sensitive membrane (221) is etched on the silicon layer (220).
5. The resonant differential pressure sensor according to claim 1, wherein the second resonator (150) has an output that is uniform in magnitude and opposite in direction to the output of the first resonator (140).
6. The resonant differential pressure sensor according to claim 1, wherein the first resonator (140), the second resonator (150), and the third resonator (160) have the same structural dimensions.
7. The resonant differential pressure sensor according to claim 2, wherein the positions of the lead holes (131) correspond one-to-one to the positions of the electrodes (170).
8. The resonant differential pressure sensor according to claim 3, wherein the second pressure sensitive membrane (221) is located at a central position of the silicon layer (220) corresponding to a position of the first pressure sensitive membrane (132).
9. The resonant differential pressure sensor according to claim 1, wherein the positions of the first resonator (140), the second resonator (150), and the third resonator (160) correspond to the positions of the first resonant cavity (214), the second resonant cavity (213), and the third resonant cavity (212), respectively, in a one-to-one manner.
10. A method of compensating a resonant differential pressure sensor using the resonant differential pressure sensor according to any one of claims 1 to 9, comprising:
selecting m temperature calibration points in the temperature working range of the resonant differential pressure sensor, selecting n static pressure calibration points in the static pressure working range of the resonant differential pressure sensor, selecting k differential pressure working points in the differential pressure working range of the resonant differential pressure sensor to obtain m multiplied by n multiplied by k working points, wherein each working point comprises one temperature calibration point, one static pressure calibration point and one differential pressure calibration point;
measuring the output frequency of each working point of the first resonator (140), the second resonator (150) and the third resonator (160) to obtain m × n × k groups of output data, wherein each group of output data comprises the output frequency of one first resonator (140), the output frequency of one second resonator (150) and the output frequency of one third resonator (160) at the same working point;
and carrying out ternary polynomial fitting on the m multiplied by n multiplied by k groups of output data to obtain a differential pressure function after temperature compensation and static pressure compensation.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113686483A (en) * | 2021-09-07 | 2021-11-23 | 中国科学院空天信息创新研究院 | Resonant differential pressure sensor integrated with temperature sensor and preparation method thereof |
| CN113697763A (en) * | 2021-08-25 | 2021-11-26 | 中国电子科技集团公司第四十九研究所 | Vacuum packaging self-compensation resonance pressure sensitive chip probe and packaging method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3512529A1 (en) * | 1985-04-06 | 1985-11-07 | Schoppe & Faeser Gmbh, 4950 Minden | Differential pressure transducer with measures for compensating the influences of variable noise quantities |
| US5458000A (en) * | 1993-07-20 | 1995-10-17 | Honeywell Inc. | Static pressure compensation of resonant integrated microbeam sensors |
| CN104535251A (en) * | 2015-01-12 | 2015-04-22 | 中国科学院电子学研究所 | Temperature self-compensating method and measuring mode for double-resonator pressure sensor |
| CN105203234A (en) * | 2015-09-18 | 2015-12-30 | 中国科学院电子学研究所 | Resonant type pressure sensor |
| CN110550598A (en) * | 2019-09-04 | 2019-12-10 | 中国科学院电子学研究所 | resonant differential pressure sensor and preparation method thereof |
-
2020
- 2020-12-30 CN CN202011643286.7A patent/CN112611501B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3512529A1 (en) * | 1985-04-06 | 1985-11-07 | Schoppe & Faeser Gmbh, 4950 Minden | Differential pressure transducer with measures for compensating the influences of variable noise quantities |
| US5458000A (en) * | 1993-07-20 | 1995-10-17 | Honeywell Inc. | Static pressure compensation of resonant integrated microbeam sensors |
| CN104535251A (en) * | 2015-01-12 | 2015-04-22 | 中国科学院电子学研究所 | Temperature self-compensating method and measuring mode for double-resonator pressure sensor |
| CN105203234A (en) * | 2015-09-18 | 2015-12-30 | 中国科学院电子学研究所 | Resonant type pressure sensor |
| CN110550598A (en) * | 2019-09-04 | 2019-12-10 | 中国科学院电子学研究所 | resonant differential pressure sensor and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113697763A (en) * | 2021-08-25 | 2021-11-26 | 中国电子科技集团公司第四十九研究所 | Vacuum packaging self-compensation resonance pressure sensitive chip probe and packaging method thereof |
| CN113686483A (en) * | 2021-09-07 | 2021-11-23 | 中国科学院空天信息创新研究院 | Resonant differential pressure sensor integrated with temperature sensor and preparation method thereof |
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