CN112609241B - Silicon raw material for silicon crystal growth, and preparation method and application thereof - Google Patents
Silicon raw material for silicon crystal growth, and preparation method and application thereof Download PDFInfo
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- CN112609241B CN112609241B CN202011444417.9A CN202011444417A CN112609241B CN 112609241 B CN112609241 B CN 112609241B CN 202011444417 A CN202011444417 A CN 202011444417A CN 112609241 B CN112609241 B CN 112609241B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a silicon raw material for silicon crystal growth, a preparation method and application thereof. The silicon raw material for silicon crystal growth comprises the following components in parts by mass: 70-99 parts of silicon powder; and 1-30 parts of silicon fragments; the particle size of the silicon powder is 0.1-1000 mu m; the particle size of the silicon fragments is 1mm to 100 mm. The silicon raw material is used for silicon raw material for silicon crystal growth, silicon fragments with larger particle size play a role in framework and support in the process of pressing the silicon raw material into block materials, and the silicon fragments with larger particle size are mixed with silicon powder with smaller particle size, so that the interaction force among molecules can be increased. The strength and toughness of the massive silicon raw material can be integrally increased, so that the compressed silicon raw material is not easy to break or break, the bulk density of the silicon raw material can be improved, the production efficiency is improved, and the application is facilitated. The invention also relates to a preparation method of the silicon raw material for silicon crystal growth, and application of the silicon raw material in casting polycrystalline silicon or casting monocrystalline silicon.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a silicon raw material for silicon crystal growth, and a preparation method and application thereof.
Background
In the photovoltaic industry, the sources of silicon powder mainly include byproducts in the production process of polycrystalline silicon, gas phase synthesis, cutting loss in the cutting link of silicon wafers and the like. For example, silicon powder with a particle size of 0.1 to 1000 microns is produced in the production of polysilicon by the siemens method, the thermal decomposition of silane and the reduction of silicon tetrachloride. At present, the silicon powder is used for casting a polycrystalline silicon ingot or a monocrystalline silicon ingot by some manufacturers, and the silicon powder is pressed into blocks or cakes in the ingot casting process and is filled into an ingot casting crucible to be used as a silicon raw material. However, the bulk density of the silicon material directly pressed from silicon powder into a block or cake is low, which results in low production efficiency and is not suitable for application.
Disclosure of Invention
In view of the above, it is necessary to provide a silicon raw material for silicon crystal growth, a method for preparing the same, and applications thereof, in order to improve the production efficiency.
A silicon raw material for growing silicon crystals comprises the following components in parts by mass:
70-99 parts of silicon powder; and
1-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 μm;
the particle size of the silicon fragments is 1 mm-100 mm.
In the silicon raw material for silicon crystal growth, in the process of pressing the silicon raw material into a block material, the silicon fragments with larger particle size play a role in skeleton and support, and the silicon fragments with larger particle size and the silicon powder with smaller particle size are mixed, so that the interaction force among molecules can be increased. The whole body can increase the strength and toughness of the whole blocky silicon raw material, so that the compressed silicon raw material is not easy to break or break, the bulk density of the silicon raw material can be improved, the production efficiency is improved, and the application is facilitated.
In one embodiment, the silicon raw material comprises the following components in parts by mass:
70-90 parts of silicon powder; and
10-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 μm;
the particle size of the silicon fragments is 1 mm-100 mm.
In one embodiment, the silicon chips comprise the following components in terms of particle size and parts by mass:
in one embodiment, the silicon raw material comprises the following components in parts by mass:
70-90 parts of silicon powder; and
10-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 mu m;
the silicon fragments comprise the following components in parts by weight according to particle size:
a method for preparing a silicon feedstock for silicon crystal growth, comprising the steps of:
providing silicon powder and silicon fragments, wherein the particle size of the silicon powder is 0.1-1000 mu m, and the particle size of the silicon fragments is 1-100 mm; and
and mixing 70-99 parts of the silicon powder and 1-30 parts of the silicon fragments according to the mass parts to obtain the silicon raw material for silicon crystal growth.
The preparation method of the silicon raw material for silicon crystal growth has simple process, and the silicon raw material prepared by the preparation method has better strength and toughness and higher bulk density after being pressed into a block material, and is not easy to break or crush. Therefore, the silicon raw material is convenient to carry, the filling amount of the silicon raw material in the single crystal furnace or the polycrystalline furnace is increased, and the melting is faster, so that the production efficiency can be improved, and the application is facilitated.
In one embodiment, after mixing the silicon powder with the silicon fragments, the method further comprises the following steps: and pressing the mixed silicon powder and silicon fragments into a block material.
In one embodiment, the silicon raw material comprises the following components in parts by mass:
70-90 parts of silicon powder; and
10-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 μm;
the particle size of the silicon fragments is 1 mm-100 mm.
In one embodiment, the silicon chips comprise the following components in terms of particle size and parts by mass:
in one embodiment, the silicon raw material comprises the following components in parts by mass:
70-90 parts of silicon powder; and
10-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 μm;
the silicon fragments comprise the following components in parts by weight according to particle size:
use of any one of the above silicon starting materials for silicon crystal growth in casting polycrystalline silicon or casting single crystal silicon.
When the silicon raw material for silicon crystal growth is used for casting polycrystalline silicon or monocrystalline silicon, the filling amount of the silicon raw material in a single crystal furnace or a polycrystalline furnace can be increased, melting is faster, and thus production efficiency can be improved.
Detailed Description
The present invention will be described in detail with reference to the following embodiments in order to make the aforementioned objects, features and advantages of the invention more comprehensible. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The silicon raw material for growing the silicon crystal comprises the following components in parts by mass:
70-99 parts of silicon powder; and
1-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 μm;
the particle size of the silicon fragments is 1mm to 100 mm.
The silicon crystal growth is a silicon crystal growth in the solar field or the semiconductor field.
Wherein, the main component of the silicon powder is Si, and the purity of the silicon powder is 99.99-99.9999999999%. The sources of the silicon powder mainly comprise byproducts in the production process of the polycrystalline silicon, gas phase synthesis, cutting loss in the cutting link of the silicon wafer and the like. The shape of the silicon powder is not limited, and the silicon powder can be regular spherical, flaky or any other regular or irregular shape.
Wherein the main component of the silicon fragments is Si, and the purity of the silicon fragments is more than 99.99%. The silicon fragments are mainly generated in the silicon wafer processing process. The shape of the silicon fragments is not limited, and the silicon fragments can be regular spheres, sheets or other regular or irregular arbitrary shapes.
The inventors of the present invention have found, through studies, that when a silicon raw material obtained in the above-mentioned ratio and the above-mentioned particle size is pressed into a block, the strength and toughness are good, the block is not easily broken or crushed, and the bulk density after pressing into a block is high. Therefore, the silicon raw material is convenient to carry, the filling amount of the silicon raw material in the single crystal furnace or the polycrystalline furnace is increased, and the melting is faster, so that the production efficiency can be improved, and the application is facilitated.
On the basis of the previous embodiment, the silicon raw material comprises the following components in parts by mass:
70-90 parts of silicon powder; and
10-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 μm;
the particle size of the silicon fragments is 1mm to 100 mm.
The inventors of the present invention have found, through research, that when a silicon raw material obtained according to the above-mentioned ratio and the above-mentioned particle size is pressed into a block-like material, the strength and toughness are better, the material is not easily broken or crushed, and the bulk density is higher. Therefore, the method is more favorable for carrying, improves the filling amount of the silicon raw materials in the single crystal furnace or the polycrystalline furnace, and melts more quickly, thereby further improving the production efficiency and being favorable for application.
On the basis of the foregoing embodiment, the silicon chips include the following components in terms of particle size and parts by mass:
the inventors of the present invention have found that the silicon chips having different particle sizes can provide the optimum filling effect when the silicon chips are mixed in the above ratio. Wherein, the great silicon piece of particle size mutually supports with the less silicon piece of particle size, and the less silicon piece of particle size fills the gap between the great silicon piece of particle size, can make the compact space of material few to reinforcing filling effect makes the bulk density who suppresses for massive silicon raw materials higher, thereby improves production efficiency better, is favorable to using.
On the basis of the previous embodiment, the silicon raw material comprises the following components in parts by mass:
70-90 parts of silicon powder; and
10-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 μm;
the silicon fragments comprise the following components in parts by weight according to particle size:
the inventors of the present invention have found, through studies, that when a silicon raw material obtained in the above-mentioned ratio and the above-mentioned particle size is pressed into a block, the strength and toughness are optimum, and the block is not easily broken or crushed and has a higher bulk density. Therefore, the method is more favorable for carrying, improves the filling amount of the silicon raw materials in the single crystal furnace or the polycrystalline furnace, and melts more quickly, thereby further improving the production efficiency and being favorable for application.
In the silicon raw material for silicon crystal growth, in the process of pressing the silicon raw material into a block material, the silicon fragments with larger particle size play a role in skeleton and support, and the silicon fragments with larger particle size and the silicon powder with smaller particle size are mixed, so that the interaction force among molecules can be increased. The whole body can increase the strength and toughness of the whole blocky silicon raw material, so that the compressed silicon raw material is not easy to break or break, the bulk density of the silicon raw material can be improved, the production efficiency is improved, and the application is facilitated.
The method for preparing a silicon raw material for silicon crystal growth according to an embodiment includes the steps of:
and S10, providing silicon powder and silicon fragments, wherein the particle size of the silicon powder is 0.1-1000 mu m, and the particle size of the silicon fragments is 1-100 mm.
Wherein, the main component of the silicon powder is Si, and the purity of the silicon powder is 99.99-99.9999999999%. The sources of the silicon powder mainly comprise byproducts in the production process of the polycrystalline silicon, gas phase synthesis, cutting loss in the cutting link of the silicon wafer and the like. The shape of the silicon powder is not limited, and the silicon powder can be regular spherical, flaky or any other regular or irregular shape.
Wherein the main component of the silicon fragments is Si, and the purity of the silicon fragments is more than 99.99%. The silicon fragments are mainly generated in the silicon wafer processing process. The shape of the silicon fragments is not limited, and the silicon fragments can be regular spheres, sheets or other regular or irregular arbitrary shapes.
And S20, mixing 70-99 parts of silicon powder and 1-30 parts of silicon fragments according to the mass parts to obtain the silicon raw material for silicon crystal growth.
The silicon powder and the silicon fragments can be uniformly stirred by adopting stirring equipment to complete mixing. Of course, any other method of mixing the silicon powder with the silicon fragments may be used.
The silicon crystal growth is a silicon crystal growth in the solar field or the semiconductor field.
On the basis of the foregoing embodiment, after mixing the silicon powder with the silicon chips, the method further includes the following steps: and pressing the mixed silicon powder and silicon fragments into a block material. After the block material is obtained, the block material can be directly put into a polycrystalline furnace or a single crystal furnace to be used as an initial raw material for silicon crystal growth.
Further, the silicon powder and the silicon chips after mixing may be pressed into a lump using an isostatic press. The isostatic pressing may be cold isostatic pressing or hot isostatic pressing. Wherein the static pressure technical parameter range of the isostatic pressure is 10 MPa-800 MPa; the temperature technical parameter range is as follows: 30-1400 ℃. Of course, other pressing methods can be used to press the mixed silicon powder and silicon fragments into a block.
On the basis of the previous embodiment, the silicon raw material comprises the following components in parts by mass:
70-90 parts of silicon powder; and
10-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 μm;
the particle size of the silicon fragments is 1mm to 100 mm.
The inventors of the present invention have found, through research, that when a silicon raw material obtained according to the above-mentioned ratio and the above-mentioned particle size is pressed into a block-like material, the strength and toughness are better, the material is not easily broken or crushed, and the bulk density is higher. Therefore, the method is more favorable for carrying, improves the filling amount of the silicon raw materials in the single crystal furnace or the polycrystalline furnace, and melts more quickly, thereby further improving the production efficiency and being favorable for application.
On the basis of the foregoing embodiment, the silicon chips include the following components in terms of particle size and parts by mass:
the inventors of the present invention have found that the silicon chips having different particle sizes can provide the optimum filling effect when the silicon chips are mixed in the above ratio. Wherein, the great silicon piece of particle size mutually supports with the less silicon piece of particle size, and the less silicon piece of particle size fills the gap between the great silicon piece of particle size, can make the compact space of material few to reinforcing filling effect makes the bulk density of pressing into massive silicon raw materials higher, thereby improves production efficiency better, is favorable to using.
On the basis of the previous embodiment, the silicon raw material comprises the following components in parts by mass:
70-90 parts of silicon powder; and
10-30 parts of silicon fragments;
the particle size of the silicon powder is 0.1-1000 μm;
the silicon fragments comprise the following components in parts by weight according to particle size:
the inventors of the present invention have found, through studies, that when a silicon raw material obtained in the above-mentioned ratio and the above-mentioned particle size is pressed into a block, the strength and toughness are optimum, and the block is not easily broken or crushed and has a higher bulk density. Therefore, the method is more favorable for carrying, improves the filling amount of the silicon raw materials in the single crystal furnace or the polycrystalline furnace, and melts more quickly, thereby further improving the production efficiency and being favorable for application.
The preparation method of the silicon raw material for silicon crystal growth has simple process, and the silicon raw material prepared by the preparation method has better strength and toughness and higher bulk density after being pressed into a block material, and is not easy to break or crush. Therefore, the silicon raw material is convenient to carry, the filling amount of the silicon raw material in the single crystal furnace or the polycrystalline furnace is increased, and the melting is faster, so that the production efficiency can be improved, and the application is facilitated.
Use of any of the above silicon starting materials for silicon crystal growth of an embodiment in casting polycrystalline silicon or casting single crystal silicon.
Specifically, any of the silicon raw materials is cold isostatically pressed or hot isostatically pressed into a bulk silicon raw material with good packing performance, and then the bulk silicon raw material is put into a polycrystalline furnace or a single crystal furnace and used as an initial raw material for silicon crystal growth.
When the silicon raw material for silicon crystal growth is used for casting polycrystalline silicon or monocrystalline silicon, the filling amount of the silicon raw material in a single crystal furnace or a polycrystalline furnace can be increased, melting is faster, and thus production efficiency can be improved.
The silicon raw material for silicon crystal growth of the present invention, the production method thereof, and the use thereof are further described below with reference to specific examples and comparative examples (the following examples, unless otherwise specified, do not contain other components not specifically indicated except inevitable impurities).
Examples 1 to 5 and comparative example 1
The preparation method of the silicon raw material of example 1 to example 5 is as follows:
weighing the raw materials according to the mass in the table 1; the silicon powder and the silicon chips were mechanically stirred for 1 hour to obtain a mixed silicon raw material.
Table 1 composition table of silicon raw materials of examples 1 to 5 and comparative example 1
Wherein "- -" in Table 1 means that the substance is absent or the content of the substance is 0.
And (3) performance testing:
the silicon raw materials of examples 1 to 5 and comparative example 1 were each subjected to isostatic pressing at 350MPa and 100 ℃ for 8min to obtain bulk silicon raw materials corresponding to the silicon raw materials of examples 1 to 5 and comparative example 1.
Bulk densities of bulk silicon raw materials corresponding to the silicon raw materials of examples 1 to 5 and comparative example 1 were measured, and the results are shown in table 2.
The compression resistance parameters of the bulk silicon raw materials corresponding to the silicon raw materials of examples 1 to 5 and comparative example 1 were obtained according to the fine ceramic compression strength test method of the chinese national standard GB/T8480-2006, and the results are shown in table 2.
TABLE 2 Performance test data for bulk silicon feedstock corresponding to silicon feedstock of examples 1-5 and comparative example 1
As can be seen from the performance test data in table 2, the bulk density and the compressive parameters of the bulk silicon raw material corresponding to the silicon raw materials of examples 1 to 5 are both greater than those of the bulk silicon raw material corresponding to the silicon raw material of comparative example 1, which indicates that the bulk density and the compressive parameters of the silicon raw material can be increased by using the silicon raw material for silicon crystal growth and the preparation method thereof according to the technical solution of the present invention, so that the production efficiency can be increased.
It can also be seen from the performance test data in table 2 that the bulk density and compressive parameters of the bulk silicon raw materials corresponding to the silicon raw materials of examples 1 to 3 are both greater than those of the bulk silicon raw materials corresponding to the silicon raw materials of examples 4 and 5, which indicates that the silicon fragments with larger particle size and the silicon fragments with smaller particle size cooperate with each other to improve the bulk density of the bulk silicon raw material, thereby better improving the production efficiency.
All possible combinations of the technical features of the above embodiments may not be described for the sake of brevity, but should be considered as within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (3)
1. A silicon raw material for silicon crystal growth is characterized by being prepared from the following components in parts by mass:
70-90 parts of silicon powder; and
10-30 parts of silicon fragments;
the silicon fragments comprise the following components in parts by weight according to particle size:
0-5 parts of first silicon fragments (1-20) mm;
10-30 parts of second silicon fragments (20-40) mm;
30-40 parts of a third silicon fragment (40-60) mm;
15-30 parts of fourth silicon fragments (60-80) mm; and
5-10 parts of fifth silicon fragments (80-100) mm;
the particle size of the silicon powder is 10-500 mu m;
the particle size of the silicon fragments is 1 mm-100 mm; and a process for the preparation of a coating,
and pressing the mixed silicon powder and the silicon fragments into block materials by adopting an isostatic pressing device.
2. A method for preparing a silicon raw material for silicon crystal growth, comprising the steps of:
providing silicon powder and silicon fragments, wherein the particle size of the silicon powder is 10-500 mu m, the particle size of the silicon fragments is 1-100 mm, and the silicon fragments comprise the following components in parts by weight according to the particle size:
0-5 parts of first silicon fragments (1-20) mm;
10-30 parts of second silicon fragments (20-40) mm;
30-40 parts of a third silicon fragment (40-60) mm;
15-30 parts of fourth silicon fragments (60-80) mm; and
5-10 parts of fifth silicon fragments (80-100) mm; and
according to the mass parts, 70-90 parts of silicon powder and 10-30 parts of silicon fragments are mixed, and the mixed silicon powder and silicon fragments are pressed into block materials by adopting isostatic pressing equipment, so that the silicon raw material for silicon crystal growth is obtained.
3. Use of the silicon feedstock for silicon crystal growth of claim 1 in casting polycrystalline silicon or casting single crystal silicon.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101613877A (en) * | 2008-06-24 | 2009-12-30 | 江西赛维Ldk太阳能高科技有限公司 | Load the application of well behaved raw material silico briquette in single crystal growing furnace or polycrystalline furnace |
| EP2423163A1 (en) * | 2010-08-25 | 2012-02-29 | Wacker Chemie AG | Polycrystalline silicon and method for production thereof |
| CN103232247A (en) * | 2013-04-18 | 2013-08-07 | 上海大学 | Preparation method of alumina polycrystalline material block |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101613877A (en) * | 2008-06-24 | 2009-12-30 | 江西赛维Ldk太阳能高科技有限公司 | Load the application of well behaved raw material silico briquette in single crystal growing furnace or polycrystalline furnace |
| EP2423163A1 (en) * | 2010-08-25 | 2012-02-29 | Wacker Chemie AG | Polycrystalline silicon and method for production thereof |
| CN103232247A (en) * | 2013-04-18 | 2013-08-07 | 上海大学 | Preparation method of alumina polycrystalline material block |
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