CN112600161A - Silicon controlled rectifier high temperature protection device and circuit control system - Google Patents
Silicon controlled rectifier high temperature protection device and circuit control system Download PDFInfo
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- CN112600161A CN112600161A CN202011596101.1A CN202011596101A CN112600161A CN 112600161 A CN112600161 A CN 112600161A CN 202011596101 A CN202011596101 A CN 202011596101A CN 112600161 A CN112600161 A CN 112600161A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/042—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using temperature dependent resistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
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Abstract
The embodiment of the invention discloses a silicon controlled high-temperature protection device, which is arranged between a control unit and a silicon controlled unit, and comprises: the first end of the resistance value variable unit is connected to a power supply, and the resistance value of the resistance value variable unit changes along with the temperature change of the silicon controlled rectifier unit; the triode unit is respectively connected to the trigger circuit path, the second end of the resistance value variable unit and the ground end; when the temperature of the silicon controlled rectifier unit is higher than a preset temperature threshold value, the resistance value of the resistance value variable unit is changed, so that the triode unit is conducted, and the trigger circuit path is conducted with the ground end. Therefore, the high-temperature protection device for the silicon controlled rectifier can realize high-temperature protection of the silicon controlled rectifier from a circuit level compared with the traditional method, has higher reliability, and improves the safety and stability of a load or a product controlled by the silicon controlled rectifier.
Description
Technical Field
The invention relates to the technical field of electronic circuits, in particular to a silicon controlled high-temperature protection device and a circuit control system.
Background
A Silicon Controlled Rectifier (Silicon Controlled Rectifier), which is a high-power electrical component, also called a thyristor. It has the advantages of small volume, high efficiency, long service life, etc. In an automatic control system, the device can be used as a high-power driving device to realize the control of high-power equipment by using a low-power control. Some small household appliances using thyristors are common in household appliances, such as health preserving pots, electric stewpots, and the like. Most of the products have silicon controlled rectifier control loads, if a single chip microcomputer is used for controlling the on-off of the silicon controlled rectifier through a trigger circuit, when the silicon controlled rectifier is conducted, the silicon controlled rectifier heats seriously due to long-time work, the temperature of the silicon controlled rectifier rises continuously along with the increase of self heating quantity, the silicon controlled rectifier is out of control due to overhigh temperature, and even the silicon controlled rectifier is burnt out, the shell of a whole machine is fused, and fire is caused.
The patent of invention No. CN201110117029.4 in the prior art discloses an LED dimming driving circuit, which has the technical idea that when the temperature of an LED lamp is higher than a preset value, the resistance of a negative temperature coefficient thermistor RT1 is reduced, the voltage of a control pin PB1 of a single chip microcomputer U1 is increased, and the single chip microcomputer changes the output pulse width of an output pin PB3 according to the change of PB1, so as to reduce the current flowing through the LED. However, the overheating protection circuit of the comparison file needs to perform complex programming on the single chip microcomputer, is prone to failure, is low in reliability, and cannot perform high-temperature protection on the controlled silicon from a circuit level.
It is therefore desirable to provide a technique for protecting thyristors from the circuit level for high temperature based on circuit design.
Disclosure of Invention
Compared with the scheme of programming a single chip microcomputer in the traditional method, the high-temperature protection device realizes high-temperature protection on the controlled silicon from the circuit level and has higher reliability, thereby effectively avoiding the problem of single chip microcomputer failure possibly caused by single chip microcomputer programming control, further performing efficient and reliable high-temperature protection on the controlled silicon, and improving the safety and stability of loads or products controlled by the controlled silicon.
In order to solve the above technical problem, a first aspect of the present invention discloses a thyristor high temperature protection device, which is disposed between a control unit and a thyristor unit, the device comprising:
the first end of the resistance value variable unit is connected to a power supply, and the resistance value of the resistance value variable unit changes along with the temperature change of the silicon controlled rectifier unit;
the triode unit is respectively connected to the trigger circuit path, the second end of the resistance value variable unit and the ground end; the trigger circuit path is a connecting circuit path between a control signal output end of the control unit and a control signal input end of a trigger circuit for driving the silicon controlled rectifier unit;
when the temperature of the silicon controlled rectifier unit is higher than a preset temperature threshold value, the resistance value of the resistance value variable unit is changed, so that the triode unit is conducted, and the trigger circuit path is conducted with the ground end.
As an optional implementation manner, in the first aspect of the present invention, a resistance value of the resistance value variable unit is in a negative correlation with a temperature of the silicon controlled rectifier unit, when the temperature of the silicon controlled rectifier unit is higher than the temperature threshold, the resistance value of the resistance value variable unit is lower than the resistance threshold, and when the resistance value of the resistance value variable unit is lower than the resistance threshold, the triode unit is turned on, so that the trigger circuit path is turned on with the ground.
As an optional implementation manner, in the first aspect of the present invention, the triode unit is an NPN type triode, a base of the triode unit is connected to the second end of the resistance variable unit, an emitter of the triode unit is connected to the ground, and a collector of the triode unit is connected to the trigger circuit path.
As an alternative embodiment, in the first aspect of the present invention, the resistance value varying unit is a negative temperature coefficient thermistor, and/or is disposed close to the thyristor unit so that the resistance value of the resistance value varying unit can vary with the temperature of the thyristor unit.
As an optional implementation manner, in the first aspect of the present invention, a first current limiting resistor is further disposed between the second end of the resistance variable unit and the base of the triode unit.
As an optional implementation manner, in the first aspect of the present invention, the trigger circuit of the scr unit includes a triac unit, a base of the triac unit is connected to the control signal output terminal of the control unit, an emitter of the triac unit is grounded, and a collector of the triac unit is connected to the trigger terminal of the scr unit.
As an optional implementation manner, in the first aspect of the present invention, a second current-limiting resistor is further disposed between the base of the triac unit and the control signal output end of the single chip, and/or a current-limiting resistor unit is further disposed between the collector of the triac unit and the trigger end of the scr unit.
As an optional implementation manner, in the first aspect of the present invention, the current limiting resistance unit includes a third current limiting resistance and a fourth current limiting resistance, which are arranged in parallel.
As an alternative implementation manner, in the first aspect of the present invention, a clamping resistor is further disposed between the base and the emitter of the triac unit.
The invention discloses a silicon controlled circuit control system in a second aspect, which comprises a control unit, a silicon controlled unit and a silicon controlled high-temperature protection device, wherein the device is arranged between the control unit and the silicon controlled unit, and comprises:
the first end of the resistance value variable unit is connected to a power supply, and the resistance value of the resistance value variable unit changes along with the temperature change of the silicon controlled rectifier unit;
the triode unit is respectively connected to the trigger circuit path, the second end of the resistance value variable unit and the ground end; the trigger circuit path is a connecting circuit path between a control signal output end of the control unit and a control signal input end of a trigger circuit for driving the silicon controlled rectifier unit;
when the temperature of the silicon controlled rectifier unit is higher than a preset temperature threshold value, the resistance value of the resistance value variable unit is changed, so that the triode unit is conducted, and the trigger circuit path is conducted with the ground end.
As an optional implementation manner, in the second aspect of the present invention, the resistance value of the resistance value variable unit and the temperature of the silicon controlled rectifier unit are in a negative correlation relationship, when the temperature of the silicon controlled rectifier unit is higher than a temperature threshold, the resistance value of the resistance value variable unit is lower than a resistance threshold, and when the resistance value of the resistance value variable unit is lower than the resistance threshold, the triode unit is turned on, so that the trigger circuit path is turned on with the ground.
As an optional implementation manner, in the second aspect of the present invention, the triode unit is an NPN type triode, a base of the triode unit is connected to the second terminal of the resistance variable unit, an emitter of the triode unit is connected to the ground, and a collector of the triode unit is connected to the trigger circuit path.
As an alternative embodiment, in the second aspect of the present invention, the resistance value varying unit is a negative temperature coefficient thermistor, and/or is disposed close to the thyristor unit so that the resistance value of the resistance value varying unit can vary with the temperature of the thyristor unit.
As an optional implementation manner, in the second aspect of the present invention, a first current limiting resistor is further disposed between the second end of the resistance variable unit and the base of the triode unit.
As an alternative implementation manner, in the second aspect of the present invention, the trigger circuit of the silicon controlled rectifier unit includes a triac unit, a base of the triac unit is connected to the control signal output terminal of the control unit, an emitter of the triac unit is grounded, and a collector of the triac unit is connected to the trigger terminal of the silicon controlled rectifier unit.
As an optional implementation manner, in the second aspect of the present invention, a second current limiting resistor is further disposed between the base of the triac unit and the control signal output end of the single chip, and/or a current limiting resistor unit is further disposed between the collector of the triac unit and the trigger end of the scr unit.
As an optional implementation manner, in the second aspect of the present invention, the current limiting resistance unit includes a third current limiting resistance and a fourth current limiting resistance, which are arranged in parallel.
As an alternative implementation manner, in the second aspect of the present invention, a clamping resistor is further disposed between the base and the emitter of the triac unit.
Compared with the prior art, the invention has the following beneficial effects:
the embodiment of the invention discloses a silicon controlled high-temperature protection device, which is arranged between a control unit and a silicon controlled unit, and comprises: the first end of the resistance value variable unit is connected to a power supply, and the resistance value of the resistance value variable unit changes along with the temperature change of the silicon controlled rectifier unit; the triode unit is respectively connected to the trigger circuit path, the second end of the resistance value variable unit and the ground end; the trigger circuit path is a connecting circuit path between a control signal output end of the control unit and a control signal input end of a trigger circuit for driving the silicon controlled rectifier unit; when the temperature of the silicon controlled rectifier unit is higher than a preset temperature threshold value, the resistance value of the resistance value variable unit is changed, so that the triode unit is conducted, and the trigger circuit path is conducted with the ground end. Compared with the scheme of programming a single chip microcomputer in the traditional method, the high-temperature protection device for the silicon controlled rectifier has higher reliability, so that the problem of single chip microcomputer failure possibly caused by single chip microcomputer programming control is effectively avoided, high-efficiency and reliable high-temperature protection is performed on the silicon controlled rectifier, and the safety and the stability of a load or a product controlled by the silicon controlled rectifier are improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of functional modules of a SCR high-temperature protection apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of functional modules of another SCR high-temperature protection device disclosed in the embodiment of the present invention;
fig. 3 is a schematic design diagram of the resistance variable unit 101 close to the thyristor unit 20 according to the embodiment of the present invention;
fig. 4 is a schematic circuit design diagram of a thyristor high-temperature protection device disclosed by the embodiment of the invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "first," "second," and the like in the description and claims of the present invention and in the above-described drawings are used for distinguishing between different objects and not for describing a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, apparatus, article, or article that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or article.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the invention. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
Compared with the scheme of programming a single chip microcomputer in the traditional method, the high-temperature protection device realizes the high-temperature protection of the controllable silicon from the circuit level and has higher reliability, thereby effectively avoiding the problem of the fault of the single chip microcomputer possibly caused by the programming control of the single chip microcomputer, further performing high-efficiency and reliable high-temperature protection on the controllable silicon and improving the safety and the stability of a load or a product controlled by the controllable silicon. The following are detailed below.
Example one
Referring to fig. 1, fig. 1 is a functional module schematic diagram of a thyristor high-temperature protection device according to an embodiment of the present invention. As shown in fig. 1, the scr high temperature protection device is disposed between a control unit 10 and a scr unit 20, and includes a resistance variable unit 101 and a triode unit 102, wherein a first end of the resistance variable unit 101 is connected to a power supply, and a resistance of the resistance variable unit 101 varies with a temperature change of the scr unit 20.
Specifically, the triode unit 102 is respectively connected to the trigger circuit path, the second terminal of the resistance variable unit 101, and the ground terminal. Wherein the trigger circuit path is a connection circuit path between a control signal output terminal Out of the control unit 10 and a control signal input terminal In of the trigger circuit 30 for driving the thyristor unit 20.
Specifically, the resistance value variable unit 101 and the triode unit 102 are configured to: when the temperature of the thyristor unit 20 is higher than the preset temperature threshold, the resistance of the resistance variable unit 101 changes, so that the triode unit 102 is turned on, and the trigger circuit path is turned on with the ground. At this time, since the trigger circuit path is conducted with the ground end, the control signal output by the control unit 101 through the control signal output end Out, such as a high level signal, will be guided to the ground end through the trigger circuit path conducted with the ground end, and the trigger circuit 30 will not be triggered at this time, so that the thyristor unit 20 stops working, thereby playing a role in protecting the thyristor unit 20 from high temperature.
Optionally, the control unit 10 may be a single chip microcomputer with an IO control function. Alternatively, the thyristor unit 20 may be used to control a load in other circuits, and its trigger terminal is connected to the control unit 10 through the trigger circuit 30, and its anode and cathode are normally connected to a switch circuit of the load, so as to control the load.
Specifically, the setting of the resistance variable unit 101 and the triode unit 102 can be realized by an operator through adjusting parameters and setting modes of electronic components, and any circuit design capable of realizing the setting is considered to fall within the protection scope of the present invention.
Therefore, compared with the scheme of programming the single chip microcomputer in the traditional method, the high-temperature protection device realizes the high-temperature protection of the controlled silicon from the circuit level and has higher reliability, thereby effectively avoiding the problem of the fault of the single chip microcomputer possibly caused by the programming control of the single chip microcomputer, further performing the high-efficiency and reliable high-temperature protection on the controlled silicon, and improving the safety and the stability of a load or a product controlled by the controlled silicon.
As an optional implementation manner, in the embodiment of the present invention, the resistance value of the resistance value variable unit 101 is in a negative correlation with the temperature of the thyristor unit 20, when the temperature of the thyristor unit 20 is higher than the temperature threshold, the resistance value of the resistance value variable unit 101 is lower than the resistance threshold, and when the resistance value of the resistance value variable unit 101 is lower than the resistance threshold, the triode unit 102 is turned on, so that the trigger circuit path is turned on with the ground.
Alternatively, the resistance value varying unit 101 is a negative temperature coefficient thermistor NTC.
As an alternative implementation manner, in the embodiment of the present invention, as shown in fig. 2, the transistor unit 102 is an NPN transistor, the base b1 of the transistor unit 102 is connected to the second terminal of the resistance variable unit 101, the emitter e1 of the transistor unit 102 is connected to ground, and the collector c1 of the transistor unit 102 is connected to the trigger circuit path.
With such a configuration, the resistance value of the resistance value variable unit 101, that is, the NTC, is correspondingly decreased when the temperature of the thyristor unit 20 increases, at this time, the voltage between the base b1 and the emitter e1 of the transistor unit 102 (which is an NPN-type transistor) is gradually increased, when the resistance value of the resistance value variable unit 101 decreases to a certain resistance value threshold, the voltage between the base b1 and the emitter e1 of the transistor unit 102 reaches the turn-on voltage of the transistor unit 102, and at this time, the collector c1 and the emitter e1 of the transistor unit 102 are conducted, so that the trigger circuit path is conducted with the ground, thereby implementing the above-mentioned high temperature protection function.
As an optional implementation manner, in the embodiment of the present invention, a first current limiting resistor 401 is further disposed between the second end of the resistance variable unit 101 and the base b1 of the transistor unit 102, so as to limit the magnitude of the current of the branch, so as to prevent the series-connected components from being burned due to an excessive current. Optionally, an operator may also adjust a current-voltage relationship between the resistance variable unit 101 and the triode unit 102 by setting the size of the first current limiting resistor 401, so as to implement setting of the resistance threshold and the temperature threshold in the high-temperature protection. For example, an operator may determine the appropriate first current limiting resistor 401 according to the temperature-resistance variation relationship between the resistance variable unit 101 and the thyristor unit 20, the voltage relationship between the power supply and the ground, and the turn-on voltage of the triode unit 102.
As an alternative implementation manner, in the embodiment of the present invention, the triggering circuit 30 of the triac unit 20 includes a triac unit 301, a base b2 of the triac unit 301 is connected to the control signal output terminal Out of the control unit 10, an emitter e2 of the triac unit 301 is grounded, and a collector c2 of the triac unit 301 is connected to the trigger terminal of the triac unit 20.
Specifically, in this optional embodiment, the thyristor unit 20 is a bidirectional thyristor or a general thyristor, the triac unit 301 is an NPN-type triode, and the triac unit 301 is configured to trigger the trigger end of the thyristor unit 20 when receiving the control signal, so as to trigger the thyristor unit 20.
As an optional implementation manner, in the embodiment of the present invention, a second current-limiting resistor 402 is further disposed between the base b2 of the triac unit 301 and the control signal output end Out of the single chip, so as to limit the magnitude of the current of the branch where the triac unit is located, and prevent the current from being too large and burning Out the components connected in series.
As an alternative implementation manner, in the embodiment of the present invention, a current-limiting resistance unit is further disposed between the collector c1 of the triggering triode unit 301 and the triggering end of the thyristor unit 20. Optionally, in the embodiment of the present invention, the current-limiting resistor unit includes a third current-limiting resistor 403 and a fourth current-limiting resistor 404, which are arranged in parallel, and are used to limit the magnitude of the current of the branch, so as to prevent the series-connected components from being burned out due to an excessive current.
As an alternative implementation manner, in the embodiment of the present invention, a clamping resistor 405 is further disposed between the base b2 and the emitter e2 of the triac unit 301, so as to limit the voltage between the base b2 and the emitter e2 of the triac unit 301, thereby ensuring the stability of the triac circuit.
As an alternative implementation manner, in the embodiment of the present invention, the resistance value varying unit 101 is disposed close to the thyristor unit 20, so that the resistance value of the resistance value varying unit 101 may vary with the temperature of the thyristor unit 20. Specifically, the resistance variable unit 101 may be disposed near the thyristor unit 20 during PCB board design, and fig. 3 shows an example, and those skilled in the art can understand how to implement the technical details of the resistance variable unit 101 disposed near the thyristor unit 20 in the present embodiment with reference to this example.
To describe the scheme of the scr high-temperature protection device in this embodiment in more detail, next, taking fig. 4 as an example, the embodiment of the present invention further discloses a specific circuit design example. As shown in fig. 4, in the exemplary circuit design, the resistors R1, R2, R3, R4, and the transistor Q1 form a trigger circuit, wherein the resistors R1, R2, and R3 are used for current limiting, the resistor R4 is used for clamping, the transistor Q1 is used for switching, and the G pole (trigger end) of the thyristor T1 is triggered to turn on or off the thyristor T1. Negative temperature coefficient thermistor RT, resistance R5, triode Q2 constitute the silicon controlled rectifier high temperature protection circuit, and negative temperature coefficient thermistor RT characteristic is: when the temperature increases and the resistance decreases, the resistor R5 acts as a current limiter and the transistor Q2 acts as a switch.
The working principle of the circuit design is explained in detail below:
when the controllable silicon T1 is at low temperature, the negative temperature coefficient thermistor RT is in a high-resistance state, the signal of the IO port of the singlechip flows to the b pole of the triode Q1 through the current-limiting resistor R3, the ce pole of the triode Q1 is conducted, and therefore the controllable silicon T1 is conducted, and when the controllable silicon T1 is conducted, the controllable silicon can generate heat due to the connection of a load. The heat of the thyristor is transferred to the thermistor RT, and the resistance of RT is reduced while the heat is transferred.
When the heat of the silicon controlled rectifier is accumulated to a certain high temperature, the resistance value of the RT is reduced to reach the preset parameter value range while the heat is increased to reach the preset parameter value range, the RT is in a low resistance state at the moment, namely, the VCC voltage current is switched on and flows to the b pole of the triode Q2 through the current limiting resistor R5, the ce pole of the triode Q2 is switched on, and due to the switching on of the triode Q2, the signal of the IO port of the singlechip passes through the current limiting resistor R3 and then does not flow to the b pole of the triode Q1, and flows into the ground end GND through the ce pole of Q2. The transistor Q1 is turned off because the b-pole driving information of the transistor Q1 disappears, so that the thyristor T1 is turned off and does not work, i.e., heating is stopped.
When the thyristor T1 stops heating, the thyristor is turned on again after cooling, that is, the above process is repeatedly executed.
Example two
The embodiment of the invention discloses a silicon controlled rectifier circuit control system, the structure of which can refer to fig. 1, and the system comprises a control unit 10, a silicon controlled rectifier unit 20 and a silicon controlled rectifier high-temperature protection device. The thyristor high-temperature protection device is arranged between the control unit 10 and the thyristor unit 20, and comprises a resistance variable unit 101 and a triode unit 102, wherein a first end of the resistance variable unit 101 is connected to a power supply, and the resistance of the resistance variable unit 101 changes along with the temperature change of the thyristor unit 20.
Specifically, the triode unit 102 is respectively connected to the trigger circuit path, the second terminal of the resistance variable unit 101, and the ground terminal. Wherein the trigger circuit path is a connection circuit path between a control signal output terminal Out of the control unit 10 and a control signal input terminal In of the trigger circuit 30 for driving the thyristor unit 20.
Specifically, the resistance value variable unit 101 and the triode unit 102 are configured to: when the temperature of the thyristor unit 20 is higher than the preset temperature threshold, the resistance of the resistance variable unit 101 changes, so that the triode unit 102 is turned on, and the trigger circuit path is turned on with the ground. At this time, since the trigger circuit path is conducted with the ground end, the control signal output by the control unit 101 through the control signal output end Out, such as a high level signal, will be guided to the ground end through the trigger circuit path conducted with the ground end, and the trigger circuit 30 will not be triggered at this time, so that the thyristor unit 20 stops working, thereby playing a role in protecting the thyristor unit 20 from high temperature.
Optionally, the control unit 10 may be a single chip microcomputer with an IO control function. Alternatively, the thyristor unit 20 may be used to control a load in other circuits, and its trigger terminal is connected to the control unit 10 through the trigger circuit 30, and its anode and cathode are normally connected to a switch circuit of the load, so as to control the load.
Specifically, the setting of the resistance variable unit 101 and the triode unit 102 can be realized by an operator through adjusting parameters and setting modes of electronic components, and any circuit design capable of realizing the setting is considered to fall within the protection scope of the present invention.
Therefore, compared with the scheme of programming the single chip microcomputer in the traditional method, the high-temperature protection device realizes the high-temperature protection of the controlled silicon from the circuit level and has higher reliability, thereby effectively avoiding the problem of the fault of the single chip microcomputer possibly caused by the programming control of the single chip microcomputer, further performing the high-efficiency and reliable high-temperature protection on the controlled silicon, and improving the safety and the stability of a load or a product controlled by the controlled silicon.
As an optional implementation manner, in the embodiment of the present invention, the resistance value of the resistance value variable unit 101 is in a negative correlation with the temperature of the thyristor unit 20, when the temperature of the thyristor unit 20 is higher than the temperature threshold, the resistance value of the resistance value variable unit 101 is lower than the resistance threshold, and when the resistance value of the resistance value variable unit 101 is lower than the resistance threshold, the triode unit 102 is turned on, so that the trigger circuit path is turned on with the ground.
Alternatively, the resistance value varying unit 101 is a negative temperature coefficient thermistor NTC.
As an alternative implementation manner, in the embodiment of the present invention, as shown in fig. 2, the transistor unit 102 is an NPN transistor, the base b1 of the transistor unit 102 is connected to the second terminal of the resistance variable unit 101, the emitter e1 of the transistor unit 102 is connected to ground, and the collector c1 of the transistor unit 102 is connected to the trigger circuit path.
With such a configuration, the resistance value of the resistance value variable unit 101, that is, the NTC, is correspondingly decreased when the temperature of the thyristor unit 20 increases, at this time, the voltage between the base b1 and the emitter e1 of the transistor unit 102 (which is an NPN-type transistor) is gradually increased, when the resistance value of the resistance value variable unit 101 decreases to a certain resistance value threshold, the voltage between the base b1 and the emitter e1 of the transistor unit 102 reaches the turn-on voltage of the transistor unit 102, and at this time, the collector c1 and the emitter e1 of the transistor unit 102 are conducted, so that the trigger circuit path is conducted with the ground, thereby implementing the above-mentioned high temperature protection function.
As an optional implementation manner, in the embodiment of the present invention, a first current limiting resistor 401 is further disposed between the second end of the resistance variable unit 101 and the base b1 of the transistor unit 102, so as to limit the magnitude of the current of the branch, so as to prevent the series-connected components from being burned due to an excessive current. Optionally, an operator may also adjust a current-voltage relationship between the resistance variable unit 101 and the triode unit 102 by setting the size of the first current limiting resistor 401, so as to implement setting of the resistance threshold and the temperature threshold in the high-temperature protection. For example, an operator may determine the appropriate first current limiting resistor 401 according to the temperature-resistance variation relationship between the resistance variable unit 101 and the thyristor unit 20, the voltage relationship between the power supply and the ground, and the turn-on voltage of the triode unit 102.
As an alternative implementation manner, in the embodiment of the present invention, the triggering circuit 30 of the triac unit 20 includes a triac unit 301, a base b2 of the triac unit 301 is connected to the control signal output terminal Out of the control unit 10, an emitter e2 of the triac unit 301 is grounded, and a collector c2 of the triac unit 301 is connected to the trigger terminal of the triac unit 20.
Specifically, in this optional embodiment, the thyristor unit 20 is a bidirectional thyristor or a general thyristor, the triac unit 301 is an NPN-type triode, and the triac unit 301 is configured to trigger the trigger end of the thyristor unit 20 when receiving the control signal, so as to trigger the thyristor unit 20.
As an optional implementation manner, in the embodiment of the present invention, a second current-limiting resistor 402 is further disposed between the base b2 of the triac unit 301 and the control signal output end Out of the single chip, so as to limit the magnitude of the current of the branch where the triac unit is located, and prevent the current from being too large and burning Out the components connected in series.
As an alternative implementation manner, in the embodiment of the present invention, a current-limiting resistance unit is further disposed between the collector c1 of the triggering triode unit 301 and the triggering end of the thyristor unit 20. Optionally, in the embodiment of the present invention, the current-limiting resistor unit includes a third current-limiting resistor 403 and a fourth current-limiting resistor 404, which are arranged in parallel, and are used to limit the magnitude of the current of the branch, so as to prevent the series-connected components from being burned out due to an excessive current.
As an alternative implementation manner, in the embodiment of the present invention, a clamping resistor 405 is further disposed between the base b2 and the emitter e2 of the triac unit 301, so as to limit the voltage between the base b2 and the emitter e2 of the triac unit 301, thereby ensuring the stability of the triac circuit.
As an alternative implementation manner, in the embodiment of the present invention, the resistance value varying unit 101 is disposed close to the thyristor unit 20, so that the resistance value of the resistance value varying unit 101 may vary with the temperature of the thyristor unit 20. Specifically, the resistance variable unit 101 may be disposed near the thyristor unit 20 during PCB board design, and fig. 3 shows an example, and those skilled in the art can understand how to implement the technical details of the resistance variable unit 101 disposed near the thyristor unit 20 in the present embodiment with reference to this example.
The above-described embodiments of the apparatus are merely illustrative, and the modules described as separate components may or may not be physically separate, and the components shown as modules may or may not be physical modules, may be located in one place, or may be distributed on a plurality of network modules. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
Finally, it should be noted that: the silicon controlled high temperature protection device and the circuit control system disclosed in the embodiments of the present invention are only preferred embodiments of the present invention, and are only used for illustrating the technical solutions of the present invention, not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art; the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The utility model provides a silicon controlled rectifier high temperature protection device which sets up between control unit and silicon controlled rectifier unit which characterized in that, the device includes:
the first end of the resistance value variable unit is connected to a power supply, and the resistance value of the resistance value variable unit changes along with the temperature change of the silicon controlled rectifier unit;
the triode unit is respectively connected to the trigger circuit path, the second end of the resistance value variable unit and the ground end; the trigger circuit path is a connecting circuit path between a control signal output end of the control unit and a control signal input end of a trigger circuit for driving the silicon controlled rectifier unit;
when the temperature of the silicon controlled rectifier unit is higher than a preset temperature threshold value, the resistance value of the resistance value variable unit is changed, so that the triode unit is conducted, and the trigger circuit path is conducted with the ground end.
2. The silicon controlled high temperature protection device as claimed in claim 1, wherein the resistance of the resistance variable unit is in a negative correlation with the temperature of the silicon controlled unit, when the temperature of the silicon controlled unit is higher than the temperature threshold, the resistance of the resistance variable unit is lower than the resistance threshold, and when the resistance of the resistance variable unit is lower than the resistance threshold, the triode unit is turned on, so that the trigger circuit path is turned on with the ground.
3. The scr high temperature protection device of claim 2, wherein the triode unit is an NPN type triode, a base of the triode unit is connected to the second terminal of the resistance variable unit, an emitter of the triode unit is connected to the ground, and a collector of the triode unit is connected to the trigger circuit path.
4. The silicon controlled high temperature protection apparatus as claimed in claim 2, wherein the resistance variable unit is a negative temperature coefficient thermistor, and/or is disposed close to the silicon controlled unit so that the resistance of the resistance variable unit can be varied with the temperature of the silicon controlled unit.
5. The silicon controlled high temperature protection device as claimed in claim 3, wherein a first current limiting resistor is further disposed between the second terminal of the resistance variable unit and the base of the triode unit.
6. The silicon controlled high temperature protection device as claimed in claim 3, wherein the trigger circuit of the silicon controlled unit comprises a triac unit, a base of the triac unit is connected to the control signal output terminal of the control unit, an emitter of the triac unit is grounded, and a collector of the triac unit is connected to the trigger terminal of the silicon controlled unit.
7. The silicon controlled high temperature protection device as claimed in claim 6, wherein a second current limiting resistor is further disposed between the base of the triac unit and the control signal output terminal of the single chip, and/or a current limiting resistor unit is further disposed between the collector of the triac unit and the trigger terminal of the silicon controlled unit.
8. The silicon controlled high temperature protection device as claimed in claim 7, wherein the current limiting resistance unit includes a third current limiting resistance and a fourth current limiting resistance arranged in parallel.
9. The SCR high temperature protection device of claim 6, wherein a clamp resistor is further disposed between the base and the emitter of said triac unit.
10. A thyristor circuit control system, characterized in that the system comprises a control unit, a thyristor unit and a thyristor high temperature protection device according to any one of claims 1-9.
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| CN202011596101.1A CN112600161B (en) | 2020-12-29 | 2020-12-29 | Silicon controlled rectifier high temperature protection device and circuit control system |
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Cited By (1)
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| CN113437957A (en) * | 2021-07-14 | 2021-09-24 | 小熊电器股份有限公司 | Trigger circuit and method of silicon controlled rectifier and load control circuit |
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| CN112600161B (en) | 2023-07-25 |
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