CN112596670A - Design method for read-write operation of high-capacity Flash memory - Google Patents
Design method for read-write operation of high-capacity Flash memory Download PDFInfo
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- CN112596670A CN112596670A CN202011405696.8A CN202011405696A CN112596670A CN 112596670 A CN112596670 A CN 112596670A CN 202011405696 A CN202011405696 A CN 202011405696A CN 112596670 A CN112596670 A CN 112596670A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/062—Securing storage systems
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
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Abstract
The invention provides a design method for read-write operation of a high-capacity Flash memory, which comprises the following steps: s1, determining an extended page operation range table of the Flash memory based on the current position pointer of the Flash memory and the length of the read-write data; s2, acquiring the initial page number of the read-write data based on the extended page operation range table, and setting the initial page number as the current page number; s3, acquiring a start address and an end address of the current page based on the extended page operation range table; s4, setting the high address line of the current page; s5, continuously reading and writing the data of the current page based on the start address and the end address of the current page and the high-order address line of the current page; and S6, acquiring the ending page number of the read-write data based on the extended page operation range table, judging whether the current page number is equal to the ending page number, if so, ending the read-write operation, otherwise, adding 1 to the current page number, and returning to S3. The method can solve the technical problems of low read-write efficiency and safety risk of the conventional high-capacity Flash memory.
Description
Technical Field
The invention relates to the technical field of electronic circuits, in particular to a design method for read-write operation of a high-capacity Flash memory.
Background
At present, the requirement of a navigation computer on a high-capacity Flash memory is increasingly greater, most processors used by the navigation computer are C6713, OMAP-L138 or Zynq-7000, and due to the limitation of the chip selection space size of the processors, the read-write access to the high-capacity Flash memory is realized by controlling a high-order address line (also called an extension page, the same below) of the Flash memory through IO operation during design.
At present, when a Flash memory is accessed each time, IO operation is needed to control a high-order address line of the Flash memory, and the operation mode is low in execution efficiency and has potential safety risks.
Disclosure of Invention
The invention provides a design method for read-write operation of a high-capacity Flash memory, which can solve the technical problems of low read-write efficiency and safety risk of the conventional high-capacity Flash memory.
In order to solve the technical problem, the invention provides a design method for read-write operation of a high-capacity Flash memory, which comprises the following steps:
s1, determining an extended page operation range table of the Flash memory based on the current position pointer of the Flash memory and the length of the read-write data, wherein the extended page operation range table comprises: the starting page number of the read-write data, the ending page number of the read-write data and the starting address and the ending address of each extended page;
s2, acquiring the initial page number of the read-write data based on the extended page operation range table, and setting the initial page number as the current page number;
s3, acquiring a start address and an end address of the current page based on the extended page operation range table;
s4, setting the high address line of the current page;
s5, continuously reading and writing the data of the current page based on the start address and the end address of the current page and the high-order address line of the current page;
and S6, acquiring the ending page number of the read-write data based on the extended page operation range table, judging whether the current page number is equal to the ending page number, if so, ending the read-write operation, otherwise, adding 1 to the current page number, and returning to S3.
Preferably, the determining the extended page operation range table of the Flash memory based on the current position pointer of the Flash memory and the length of the read-write data includes:
determining the initial page number of read-write data based on the current position pointer of the Flash memory;
determining an ending page number of the read-write data based on the starting page number of the read-write data and the length of the read-write data;
and determining an extended page operation range table of the Flash memory based on the starting page number of the read-write data, the ending page number of the read-write data and the starting address and the ending address of each extended page.
By applying the technical scheme of the invention, the extended page operation range table of the Flash memory is determined by the current position pointer of the Flash memory and the length of the read-write data, so that the Flash high-order address line is only set once in the same extended page, and the Flash high-order address line is prevented from being repeatedly set for many times, thereby eliminating redundant operation in the data read-write process, reducing the execution time of a processor, improving the execution efficiency of the processor and reducing the safety risk. The design method can be applied to Flash memories with different capacities by adjusting the total expansion page number, and has the advantages of ingenious conception, simple flow, convenient transplantation, easy popularization and the like.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a flow chart illustrating a design method for read/write operations of a high-capacity Flash memory according to an embodiment of the present invention;
FIG. 2 illustrates an extended page operating range table provided according to an embodiment of the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
FIG. 1 is a flowchart illustrating a design method for read/write operations of a high-capacity Flash memory according to an embodiment of the present invention.
As shown in fig. 1, the present invention provides a design method for read-write operation of a high-capacity Flash memory, where the method includes:
s1, determining an extended page operation range table of the Flash memory based on the current position pointer of the Flash memory and the length of the read-write data, wherein the extended page operation range table comprises: the starting page number of the read-write data, the ending page number of the read-write data and the starting address and the ending address of each extended page;
s2, acquiring the initial page number of the read-write data based on the extended page operation range table, and setting the initial page number as the current page number;
s3, acquiring a start address and an end address of the current page based on the extended page operation range table;
s4, setting the high address line of the current page;
s5, continuously reading and writing the data of the current page based on the start address and the end address of the current page and the high-order address line of the current page;
and S6, acquiring the ending page number of the read-write data based on the extended page operation range table, judging whether the current page number is equal to the ending page number, if so, ending the read-write operation, otherwise, adding 1 to the current page number, and returning to S3.
By applying the technical scheme of the invention, the extended page operation range table of the Flash memory is determined by the current position pointer of the Flash memory and the length of the read-write data, so that the Flash high-order address line is only set once in the same extended page, and the Flash high-order address line is prevented from being repeatedly set for many times, thereby eliminating redundant operation in the data read-write process, reducing the execution time of a processor, improving the execution efficiency of the processor and reducing the safety risk. The design method can be applied to Flash memories with different capacities by adjusting the total expansion page number, and has the advantages of ingenious conception, simple flow, convenient transplantation, easy popularization and the like.
According to an embodiment of the present invention, determining the extended page operation range table of the Flash memory based on the current position pointer of the Flash memory and the length of the read-write data includes:
s11, determining the initial page number of the read-write data based on the current position pointer of the Flash memory;
s12, determining the ending page number of the read-write data based on the starting page number of the read-write data and the length of the read-write data;
s13, determining an extended page operation range table of the Flash memory based on the start page number of the read-write data, the end page number of the read-write data and the start address and the end address of each extended page.
FIG. 2 illustrates an extended page operating range table provided according to an embodiment of the present invention. As shown in fig. 2, the extended page operation range table of the Flash memory includes: the starting page number of the read-write data, the ending page number of the read-write data and the starting address and the ending address of each extended page.
The size of the extended page operation range table is determined by the total extended page number of the Flash memory. When the Flash memory with other capacity is adapted, only the total number of the extension pages is required to be changed.
By adopting the design method of the extended page operation range table, the invention can avoid repeatedly setting the Flash high-order address line when reading and writing the large-capacity Flash memory, especially when large data volume is continuously accessed, thereby improving the execution efficiency and realizing the flexible extension of the Flash memories with different capacities.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (2)
1. A design method for read-write operation of a high-capacity Flash memory is characterized by comprising the following steps:
s1, determining an extended page operation range table of the Flash memory based on the current position pointer of the Flash memory and the length of the read-write data, wherein the extended page operation range table comprises: the starting page number of the read-write data, the ending page number of the read-write data and the starting address and the ending address of each extended page;
s2, acquiring the initial page number of the read-write data based on the extended page operation range table, and setting the initial page number as the current page number;
s3, acquiring a start address and an end address of the current page based on the extended page operation range table;
s4, setting the high address line of the current page;
s5, continuously reading and writing the data of the current page based on the start address and the end address of the current page and the high-order address line of the current page;
and S6, acquiring the ending page number of the read-write data based on the extended page operation range table, judging whether the current page number is equal to the ending page number, if so, ending the read-write operation, otherwise, adding 1 to the current page number, and returning to S3.
2. The method of claim 1, wherein determining the extended page operating range table of the Flash memory based on the current location pointer of the Flash memory and the length of the read-write data comprises:
determining the initial page number of read-write data based on the current position pointer of the Flash memory;
determining an ending page number of the read-write data based on the starting page number of the read-write data and the length of the read-write data;
and determining an extended page operation range table of the Flash memory based on the starting page number of the read-write data, the ending page number of the read-write data and the starting address and the ending address of each extended page.
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| CN202011405696.8A CN112596670B (en) | 2020-12-04 | 2020-12-04 | Design method for read-write operation of high-capacity Flash memory |
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| CN202011405696.8A CN112596670B (en) | 2020-12-04 | 2020-12-04 | Design method for read-write operation of high-capacity Flash memory |
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| CN112596670B CN112596670B (en) | 2024-06-07 |
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| JP2014048895A (en) * | 2012-08-31 | 2014-03-17 | Nec Corp | Virtual memory management system, virtual memory management device, virtual memory initialization method, and virtual memory initialization program |
| US20140201422A1 (en) * | 2011-12-22 | 2014-07-17 | Kuo-Lang Tseng | Determining policy actions for the handling of data read/write extended page table violations |
| CN108664482A (en) * | 2017-03-27 | 2018-10-16 | 纳思达股份有限公司 | FLASH memory and storage file management method |
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2020
- 2020-12-04 CN CN202011405696.8A patent/CN112596670B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH06309223A (en) * | 1993-04-27 | 1994-11-04 | Toshiba Corp | Storage device with memory interleaving function |
| US6415338B1 (en) * | 1998-02-11 | 2002-07-02 | Globespan, Inc. | System for writing a data value at a starting address to a number of consecutive locations equal to a segment length identifier |
| US20070136510A1 (en) * | 2005-11-09 | 2007-06-14 | Hiroshi Ippongi | Storage device, memory managing device, memory managing method, and program |
| US20140201422A1 (en) * | 2011-12-22 | 2014-07-17 | Kuo-Lang Tseng | Determining policy actions for the handling of data read/write extended page table violations |
| CN102567184A (en) * | 2011-12-27 | 2012-07-11 | 青岛海信宽带多媒体技术有限公司 | Journal storage method based on Flash |
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