CN112595703A - Electron beam excited semiconductor luminescence performance test platform and excitation parameter optimization method - Google Patents
Electron beam excited semiconductor luminescence performance test platform and excitation parameter optimization method Download PDFInfo
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Abstract
The invention relates to a test platform for electron beam excited semiconductor luminescence property and an excitation parameter optimization method. The invention can provide the globally optimal electron beam parameter combination aiming at different luminescence property requirements.
Description
Technical Field
The invention relates to a parameter optimization method, in particular to an excitation parameter optimization method for electron beam excited semiconductor luminescence performance, and also relates to an electron beam excited semiconductor luminescence performance test platform, belonging to the field of electron beam excited semiconductor luminescence.
Background
When an electron beam is incident on a semiconductor light emitting material with a certain thickness, the interaction between an incident electron and electrons and atomic nuclei inside the atom is mainly coulomb interaction. Because the de broglie wavelength of electrons is equivalent to the atomic spacing size of semiconductor crystal lattice, coherent scattering of electrons occurs in the interaction between electrons and semiconductor, and the effect of electron diffraction is not negligible.
Momentum and energy exchange between the incident electrons and the atoms is possible and the scattered electrons will emerge from the scattering center at different angles. The scattering can be classified into non-radiation scattering and radiation scattering according to whether photons are emitted or not during scattering. Nonradiative scattering is further classified into three types, elastic scattering, inelastic scattering and superelastic scattering. The energy of the two particles does not change during elastic scattering, and the structure and distribution of the electron tracks are mainly influenced. When the energy transferred by the incident electrons to the atoms is capable of exciting electrons within the target atoms, known as inelastic scattering, most of the cases result in certain excitation effects within the atoms, including the generation of photons, backscattered electrons, secondary electrons, auger electrons, lattice vibrations, and plasmon oscillations of positive and negative charges in the crystal.
When an excited atom scatters with an incident electron, which may also gain energy, the scattering of the excited atom back to a lower energy level is called superelastic scattering. When high-energy electrons are incident to a near region of a atomic nucleus, the movement direction of the electrons is deflected due to interaction with a strong coulomb field of the atomic nucleus, and the electrons are sharply decelerated along with a radiation process, so that the energy is converted into X-ray radiation.
The collision cross section with radiation scattering is far smaller than that without radiation scattering, most of the without radiation scattering is inelastic scattering, and the elastic and superelastic scattering only accounts for a very small proportion. Incident electrons completely lose directivity after being scattered for many times, the probability of scattering towards each direction is approximately equal, and the interaction with a substance is within a certain volume range, namely the interaction volume. The energy deposition of incident electrons in a trajectory is mainly accomplished by inelastic scattering, which is the main way for the medium near the trajectory of the incident electrons to accumulate energy and to exhibit a non-uniform spatial distribution. The incident electron intrusion process can be simplified as a series of inelastic collisions and a superposition of elastic collisions.
Kingsley believes that incident electrons first excite inner layer electrons of atoms near the incident surface by means of inelastic scattering, and because the initial incident electrons have large energy, the inner layer electrons are mostly excited into high-energy free electrons, which are called high-speed secondary electrons. When the outer layer electron jumps to the inner layer vacancy, Auger electron or X-ray is formed. The high-speed "secondary" electrons will excite other valence electrons to the conduction band and become "secondary" electrons with lower energy, thus continuously proliferating. When the energy of the "secondary" electron is not enough to excite other electrons, it will interact with lattice electrons and release the excess energy through phonons. Another theory holds that 75-90% of the energy of an incident electron first generates a large number of plasmons of different energies (the quantized oscillation of a large number of positive and negative charges caused by the incident electron), which in turn generates "secondary" electrons of different energies, which in turn excite other valence electrons until they cannot excite other valence electrons, becoming a final state of low-energy "secondary" electrons, which are at different energy levels in the conduction band. For example, at an electron beam acceleration voltage of 1keV, one electron can generate tens to hundreds of low energy "secondary" electrons, which, together with holes in the valence band, can be referred to as electron beam excited generated carriers, similar to photogenerated carriers. Both existing theories are ultimately that the incident electron converts the bulk of the valence electrons in the interaction volume into a low-energy "secondary" electron that cannot excite other electrons, leaving a hole at the valence band site.
In general, the energy of incident electrons is exceededThe valence electrons of the semiconductor light-emitting material can be excited to a conduction band by more than 2.8 times of the forbidden band width of the material. When the final low-energy secondary electron energy attenuation falls to the bottom of the conduction band, the energy can jump to a valence band and be compounded with a valence band hole to emit photons, and the photon energy is less than or equal to the forbidden band width. When exciton binding energy in the semiconductor luminescent material is larger than k at room temperatureBAt T (26meV), a part of electrons and holes can be bound together in space to form excitons under the influence of coulomb force at room temperature, and the excitons generate light.
When the energy of the incident electrons is too low, only the surface layer of the semiconductor luminescent material is excited, and valence electrons in the deep part cannot be excited, so that the electron beam excited luminescence efficiency is low. The higher the electron energy, the greater the depth of penetration of the electrons into the semiconductor. When the semiconductor layer is not penetrated, the higher the energy of the incident electrons, the larger the number of carriers generated by electron beam excitation with the same number of electrons. When the energy of incident electrons is too large, the intrusion depth of the electrons exceeds the thickness of the semiconductor luminescent material, and the electrons penetrate through the semiconductor luminescent material and enter a growth substrate of the semiconductor luminescent material, so that energy loss is caused, the effective excitation efficiency is reduced, and proper energy of the incident electrons needs to be searched. Statistically, the average excited region of an electron incident on the semiconductor surface is approximately constant for a given incident electron energy. When the electron beam flux density is too low, the excitation area cannot effectively cover the semiconductor, and the effective excitation efficiency is low. As the electron beam flux density increases, the excitation area and the excitation amount become larger. However, when the flux density is too high, the outer valence electrons of the semiconductor atoms are not enough to be excited, and a large amount of electron beam energy is converted into heat energy. Appropriate electron beam flow parameters need to be studied.
The light emission of the semiconductor luminescent material when excited by electron beams with different parameters corresponds to different luminescent powers, electro-optic conversion efficiencies and light output stabilities, and the parameters of the electron beams are electron energy incident to the surface of the material and the flux density of the electron beams. However, the value ranges of the electron energy of the electron beam and the flux density of the electron beam are very large, and infinite electron beam parameter combinations can be theoretically combined. At present, when the luminescent performance of the semiconductor luminescent material excited by electron beams is tested, most of the luminescent performances of a certain luminescent performance index are obtained by actually measuring the luminescent performances of a plurality of groups of electron beam parameters, and only local optimal electron beam parameters can be obtained, but global optimal electron beam parameters cannot be obtained.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides an electron beam excited semiconductor luminescence property test platform and an excitation parameter optimization method.
In order to solve the technical problems, the invention is realized by the following technical scheme:
an excitation parameter optimization method for electron beam excited semiconductor luminescence performance comprises the following steps:
step (1) determining incident electron energy and electron beam flux density range
Determining the energy range of incident electrons as [ En, Ex ], and determining the flux density range of electron beams as [ Fn, Fx ]; step (2), sampling at equal intervals and acquiring electron beam parameter combination
Sampling M terms at equal intervals in an incident electron energy range [ En, Ex ], and obtaining an array { Ei }, wherein i is 1,2,. M; sampling N items at equal intervals in the range of the flux density of the electron beam to obtain a sequence { Fj }, wherein j is 1,2,. N; combining { Ei } and { Fj } in pairs to obtain MxN excitation parameter combinations [ Ei, Fj ];
step (3), calculating the number of secondary electrons corresponding to different electron beam parameter combinations
Calculating the number { Bij } of secondary electrons corresponding to each parameter combination [ Ei, Fj ];
step (4) primarily selecting electron beam parameter combination
Step (5), actually measuring the luminous performance of the initially selected electron beam parameter combination
Actually measuring the luminous performance of the initially selected electron beam parameter combination, including an optical power value, optical power output stability and an effective luminous efficiency value;
step (6) obtaining electron beam parameter combination with overall optimal luminescence performance
And acquiring an electron beam parameter combination with globally optimal luminescence performance, wherein the electron beam parameter combination comprises three single-term champion excitation parameters.
Further, step (ii)(1) According to the dislocation threshold energy value of various atoms in the semiconductor luminescent material for testing, the collision formula considering relativistic effect, electron mass and each atomic mass are utilized to calculate the minimum electron energy which can cause atom dislocation damage and is marked as Em1。
Further, in the step (1), the minimum electron energy E causing the atom dislocation damage is calculatedm1(ii) a The electron energy is electron passing voltage Em1Kinetic energy obtained after volt acceleration, not considering the rest energy of electrons; the electron beam generating device can provide electron energy with maximum value E incident on the surface of the semiconductor luminescent materialm2(ii) a Selection of Em1And Em2Small value of (5) as the upper limit E of the electron energy rangex；
The forbidden band width of the semiconductor luminescent material is marked as Eg, and the electron energy corresponding to 2.8 × Eg is marked as En1(ii) a The minimum value of the energy of the electrons incident on the surface of the semiconductor luminescent material provided by the electron beam generating device is En2(ii) a Selection of En1And En2Middle large value as the lower limit E of the electron energy rangenThe electron energy range is [ E ]n，Ex]；
When the diameter of the electron beam spot is the same as that of the semiconductor luminescent material, the maximum value and the minimum value of the average flux density of the electron beam provided by the electron beam generating device are the range [ Fn, Fx ] of the electron beam flux density; the electron beam average flow density is the ratio of the electron beam flow value to the electron beam spot area.
Further, in the step (2), the equal difference number series { E for sampling the electron energy test range at equal intervals is obtained by sampling at certain intervals delta E and delta F from the minimum interval value i1,2,. M, with M terms; acquiring an arithmetic sequence { F) for sampling the electron beam flow density test range at equal intervalsjN, N terms;
from series of arithmetic numbers { E }iBeginning with the first item of { E }iEach of the terms is respectively sequentially and equally differenced with the sequence of { F }jThe items from the first item are combined to obtain k [ E ] in sequencei,Fj]In combination, whereinAnd k is M × N, each combination is referred to as an electron beam parameter combination.
Further, in the step (3), a Monte Carlo model is utilized to simulate the scattering process of electrons in the semiconductor luminescent material, and the number of secondary electrons is calculated; wherein, the Bohm quantum track method simulates the process that the incident electron inelastically scatters and excites the inner layer electron of the sample atom to generate high-speed secondary electrons; mott's elastic scattering cross-section model calculates the elastic scattering process that processes high-speed "secondary" electrons and cascades to produce low-energy "secondary" electrons; calculating the attenuation of high-speed secondary electrons and the inelastic scattering process for cascading to generate low-energy secondary electrons by utilizing a Full-Penn Algorithm dielectric function method;
calculating the coordinate positions and energy deposition distribution of all energy secondary electrons and holes after the electron beams are incident to the semiconductor luminescent material by using a Monte Carlo model; starting from a first electron beam parameter combination, calculating the steady state total quantity of low-energy secondary electrons which cannot excite other valence electron states when the electron energy incident to the surface of the semiconductor luminescent material and the electron beam flow density are sequentially set as numerical values in each parameter combination by combining a semiconductor luminescent material three-dimensional structure constructed by a solid structure geometric method; sequentially obtaining k total values to form a sequence, denoted as { B }ij}。
Further, in step (4), { BijMaximum value BmaxThe corresponding electron beam parameter combination is recorded as [ E ]max，Fmax]；Bij/BmaxThe weight is set to W1; b isij/(Ei*Fj) Is recorded as BEmax，Bij/(BEmax*Ei*Fj) Weight W2, calculate Performance index ZijComprises the following steps:
Zij＝W1*Bij/Bmax+W2*Bij/(BEmax*Ei*Fj)；
calculated culling [ Emax，Fmax]Corresponding Z of the remaining k-1 electron beam parameter combinationsijAnd arranged in descending order and marked as the number sequence { Z n1,2,3, …, k-1, andget { ZnThe combination of electron beam parameters corresponding to the preceding x-1 term, x is greater than or equal to 4, plus [ E ]max，Fmax]As the selected x initial selection parameter combinations; the weight value W1 corresponds to the requirement of luminous power, and W2 corresponds to the requirement of electro-optical conversion efficiency.
Further, in the step (5), the electron beam generating device is sequentially adjusted to make the electron energy and the electron beam flux density incident on the surface of the semiconductor luminescent material respectively combine with the x primary selection parameters, and the optical power measured values P corresponding to different parameter combinations are obtainedijOptical power output stability OSijEffective luminous efficiency value PEij＝Pij/(Ei*FjS), where S is the area of the upper surface of the sample;
the light power output stability is the average value/peak value-peak value of light power measured values within 100 hours of light emitting time after stable light emitting; the maximum value of the optical power is denoted as PmaxThe maximum value of the light power output stability is recorded as OSmaxThe maximum value of the effective luminous efficiency is recorded as PEmax。
Further, in the step (6), electron beam parameter combinations corresponding to the maximum value of the corresponding optical power, the maximum value of the effective luminous efficiency and the maximum value of the optical power output stability are taken out and serve as three single-term champion parameters; calculating the comprehensive luminescence property OPij：
OPij＝W1*Pij/Pmax+W2*PEij/PEmax+W3*OSij/OSmax；
The weight W3 corresponds to the requirement of optical power output stability; calculating the residual x-3 [ E ] after eliminating three single champion excitation parametersi，Fj]X-3 OP corresponding to the combination of excitation parametersijAnd arranged in descending order and marked as the sequence of numbers { OP n1,2,3, …, x-3, extracting a sequence of numbers { OP }nE corresponding to the first termi，Fj]The combination plus the three individual champion parameters is the final selected combination of 4 electron beam parameters for semiconductor illumination.
The invention also relates to an electron beam excited semiconductor luminescence performance test platform which comprises a vacuum cavity, an electron beam generating device, an anode target surface, an annular semiconductor temperature control device, an optical power measuring device and a vacuum pump, wherein the anode target surface of the electron beam generating device is a metal plate with a circular hole in the center, and the thickness of the metal plate is less than 1 mm; the semiconductor luminescent material is cylindrical, and the column side is arranged in the central hole of the anode metal plate by using conductive and heat-conducting silica gel. The periphery of the central hole is provided with an annular semiconductor temperature control device, and the semiconductor luminescent material is used for temperature control. The electron beam is incident to the semiconductor luminescent material from one bottom surface, the accumulated electrons flow to the anode of the metal plate from the semiconductor luminescent material through the conductive and heat-conducting silica gel, and form a loop with the electron beam emission of the cathode, and the light probe of the optical power measuring device points to the other bottom surface of the cylindrical semiconductor luminescent material and is fixed with the position of the semiconductor luminescent material.
The luminous performance test platform is used for realizing the step (5), the electron beam generating devices are sequentially adjusted, so that the electron energy and the electron beam flow density of the electron beam generating devices, which are incident to the surface of the semiconductor luminous material, are respectively combined with x primary selection parameters, and the luminous power measured values P corresponding to different parameter combinations are obtainedij. The temperature of the annular semiconductor temperature control device is kept constant during all measurement, and the optical power device is used for measuring the luminous power when the electron beam excites the semiconductor.
Compared with the prior art, the invention has the following beneficial effects:
the invention can provide the global optimal electron beam parameter combination aiming at different luminous performance requirements: the method can obtain the electron beam parameters corresponding to the maximum value of the optical power, the maximum value of the effective luminous efficiency and the maximum value of the optical power output stability when the semiconductor luminescent material is excited by the electron beam to emit light. When a light source with the maximum luminous power is needed, the electron beam parameters are adjusted to the corresponding single term champion emission parameters, and when the requirements on the light power, the luminous efficiency and the light power output stability are respectively W1(0-1), W2 and W3, the parameters are brought into the method to obtain the corresponding OPn＝1The desired electron beam parameters.
The method can be used for guiding the design of a light source based on electron beam excitation, and electron beam parameters meeting characteristic requirements can be given based on the method according to different light source characteristic requirements.
Drawings
FIG. 1 is a schematic structural diagram of a platform of the present invention;
FIG. 2 is a flow chart of the method of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Unless otherwise defined, technical or scientific terms used in the embodiments of the present application should have the ordinary meaning as understood by those having ordinary skill in the art to which the present invention belongs. The use of "first," "second," and similar language in the embodiments of the present invention does not denote any order, quantity, or importance, but rather the terms "first," "second," and similar language are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. "mounted," "connected," and "coupled" are to be construed broadly and may, for example, be fixedly coupled, detachably coupled, or integrally coupled; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. "Upper," "lower," "left," "right," "lateral," "vertical," and the like are used solely in relation to the orientation of the components in the figures, and these directional terms are relative terms that are used for descriptive and clarity purposes and that can vary accordingly depending on the orientation in which the components in the figures are placed.
The electron beam excited semiconductor luminescence performance test platform of the embodiment mainly comprises an electron beam generating device 10, an anode target surface 6, an optical power measuring device 4 and a vacuum pump 11 which are arranged in a vacuum cavity 1.
The vacuum chamber 1 provides a high vacuum environment required for experiments. The vacuum chamber 1, the electron beam generating device 10 (such as an axial electron gun), the optical power measuring device 4 and the vacuum pump 11 are all conventional devices.
The electron beam generating apparatus 10 includes an electron optical system, and can adjust a flow rate value (unit: A) and an electron beam flow rate density (unit: A/m) of an electron beam generated by the electron optical system in a wide range2) And the energy of the electrons incident on the anode target (unit: eV).
The anode target surface 6 of the electron beam generating device is a metal plate with a round hole in the center and the thickness is less than 1 mm. The semiconductor luminescent material 7 to be tested which is arranged in the round hole of the anode target surface 6 is processed into a cylinder shape, and the column side is arranged in the center hole of the anode metal plate by using conductive and heat-conducting silica gel.
As shown in fig. 1, an electron beam 8 is incident on the semiconductor light emitting material 7 from a bottom surface, and accumulated electrons flow from the semiconductor light emitting material 7 to the anode target surface 6 of the metal plate through the conductive and heat conductive silica gel, and form a loop with the electron beam emission of the cathode. The optical power measuring device 4 is provided with a light probe pointing to the other bottom surface of the cylindrical semiconductor luminescent material and fixed with the semiconductor luminescent material. A Faraday cup 9 is arranged near the electron beam and used for measuring the flow of the electron beam incident to the semiconductor material meter, the Faraday cup moves towards the electron beam during measurement, the electron beam enters the interior of the Faraday cup, and the electron beam moves away from the electron beam after measurement. The annular semiconductor temperature control device 5 is positioned on the surface of the anode target surface outside the central hole. The electron beam generating device 10, the anode target surface 6, the optical power measuring device 4, the Faraday cup 9 and the annular semiconductor temperature control device 5 are connected with the acquisition controller through the vacuum plug 2. The electron beam generating device 10, the anode target surface 6, the optical power measuring device 4, the Faraday cup 9, the annular semiconductor temperature control device 5 and the acquisition controller are also connected with a power supply.
As shown in fig. 2, the method for optimizing the excitation parameters of the luminescence property of the semiconductor excited by the electron beam of the embodiment includes the following steps:
step (1) determining incident electron energy and electron beam flux density range
ForThe tested semiconductor luminescent material is processed into a cylindrical shape, and according to the dislocation threshold energy values of various atoms in the tested semiconductor luminescent material, the minimum electron energy (unit: eV) capable of causing atom dislocation damage is calculated by utilizing a collision formula considering relativistic effect, electron mass and each atom mass and is marked as Em1；
Calculating the minimum electron energy E causing atom dislocation damagem1(ii) a The electron energy is electron passing voltage Em1Kinetic energy obtained after volt acceleration, not considering the rest energy of electrons; the electron beam generating device can provide electron energy with maximum value E incident on the surface of the semiconductor luminescent materialm2(ii) a Selection of Em1And Em2Small value of (5) as the upper limit E of the electron energy rangex(ii) a The forbidden band width of the semiconductor light-emitting material is denoted as Eg (for semiconductor materials of various compositions, such as multiple quantum wells or quantum dots, the forbidden band width of the component with the smallest forbidden band width is selected), and the electron energy corresponding to 2.8 × Eg is denoted as En1(ii) a The minimum value of the energy of the electrons incident on the surface of the semiconductor luminescent material provided by the electron beam generating device is En2(ii) a Selection of En1And En2Middle large value as the lower limit E of the electron energy rangenThe electron energy range is [ E ]n，Ex]；
When the diameter of the electron beam spot is the same as that of the semiconductor luminescent material, the maximum value and the minimum value of the average flux density of the electron beam provided by the electron beam generating device are the range [ Fn, Fx ] of the electron beam flux density; the electron beam average flow density is the ratio of the electron beam flow value to the electron beam spot area.
Step (2), sampling at equal intervals and acquiring electron beam parameter combination
Sampling at certain intervals delta E and delta F from the minimum interval value to obtain an arithmetic progression { E ] for sampling the electron energy test range at equal intervals i1,2,. M, with M terms; acquiring an arithmetic sequence { F) for sampling the electron beam flow density test range at equal intervalsjN, N.
From series of arithmetic numbers { E }iFirst item of }Start, { EiEach of the terms is respectively sequentially and equally differenced with the sequence of { F }jThe items from the first item are combined to obtain k [ E ] in sequencei,Fj]Combinations, where k is M × N, each combination is referred to as an electron beam parameter combination.
Step (3), calculating the number of secondary electrons corresponding to different electron beam parameter combinations
Simulating the scattering process of electrons in the semiconductor luminescent material by using a Monte Carlo model, and calculating the number of secondary electrons; wherein, the Bohm quantum track method simulates the process that the incident electron inelastically scatters and excites the inner layer electron of the sample atom to generate high-speed secondary electrons; mott's elastic scattering cross-section model calculates the elastic scattering process that processes high-speed "secondary" electrons and cascades to produce low-energy "secondary" electrons; the attenuation of high-speed "secondary" electrons and the inelastic scattering process that cascades to produce low-energy "secondary" electrons are calculated using the Full-Penn Algorithm dielectric function method.
Calculating the coordinate positions and energy deposition distribution of all energy secondary electrons and holes after the electron beams are incident to the semiconductor luminescent material by using a Monte Carlo model; starting from a first electron beam parameter combination, calculating the steady state total quantity of low-energy secondary electrons which cannot excite other valence electron states when the electron energy incident to the surface of the semiconductor luminescent material and the electron beam flow density are sequentially set as numerical values in each parameter combination by combining a semiconductor luminescent material three-dimensional structure constructed by a solid structure geometric method; sequentially obtaining k total values to form a sequence, denoted as { B }ij}。
Step (4) primarily selecting electron beam parameter combination
{BijMaximum value BmaxThe corresponding electron beam parameter combination is recorded as [ E ]max，Fmax]；Bij/BmaxThe weight is set to W1; b isij/(Ei*Fj) Is recorded as BEmax，Bij/(BEmax*Ei*Fj) Weight W2, calculate Performance index ZijComprises the following steps:
Zij＝W1*Bij/Bmax+W2*Bij/(BEmax*Ei*Fj)；
calculated culling [ Emax，Fmax]Corresponding Z of the remaining k-1 electron beam parameter combinationsijAnd arranged in descending order and marked as the number sequence { Z n1,2,3, …, k-1, extracting { Z ═ ZnThe combination of electron beam parameters corresponding to the preceding x-1 term, x is greater than or equal to 4, plus [ E ]max，Fmax]As the selected x initial selection parameter combinations; the weight value W1 corresponds to the requirement of luminous power, and W2 corresponds to the requirement of electro-optical conversion efficiency.
Step (5), actually measuring the luminous performance of the initially selected electron beam parameter combination
Sequentially adjusting the electron beam generating device to make the electron energy and the electron beam flux density incident on the surface of the semiconductor luminescent material respectively combine x primary selection parameters to obtain the optical power measured values P corresponding to different parameter combinationsijOptical power output stability OSijEffective luminous efficiency value PEij＝Pij/(Ei*FjS), where S is the area of the upper surface of the sample.
The light power output stability is the average value/peak value-peak value of light power measured values within 100 hours of light emitting time after stable light emitting; the maximum value of the optical power is denoted as PmaxThe maximum value of the light power output stability is recorded as OSmaxThe maximum value of the effective luminous efficiency is recorded as PEmax。
Step (6) obtaining electron beam parameter combination with overall optimal luminescence performance
Taking electron beam parameter combinations corresponding to the maximum value of the light power, the maximum value of the effective luminous efficiency and the maximum value of the light power output stability as three single-term champion parameters; calculating the comprehensive luminescence property OPij：
OPij＝W1*Pij/Pmax+W2*PEij/PEmax+W3*OSij/OSmax；
The weight W3 corresponds to the requirement of optical power output stability; calculating the residual x-3 [ E ] after eliminating three single champion excitation parametersi，Fj]X-3 OP corresponding to the combination of excitation parametersijAnd arranged in descending order and marked as the sequence of numbers { OP n1,2,3, …, x-3, extracting a sequence of numbers { OP }nE corresponding to the first termi，Fj]The combination plus the three individual champion parameters is the final selected combination of 4 electron beam parameters for semiconductor illumination.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. An excitation parameter optimization method for electron beam excited semiconductor luminescence performance is characterized in that: the method comprises the following steps:
step (1) determining incident electron energy and electron beam flux density range
Determining the energy range of incident electrons as [ En, Ex ], and determining the flux density range of electron beams as [ Fn, Fx ];
step (2), sampling at equal intervals and acquiring electron beam parameter combination
Sampling M terms at equal intervals for an incident electron energy range [ En, Ex ], to obtain a sequence { Ei }, i =1,2,. M; sampling N terms at equal intervals for the electron beam flux density range [ Fn, Fx ], and obtaining a sequence { Fj }, j =1,2,. N; combining { Ei } and { Fj } in pairs to obtain MxN excitation parameter combinations [ Ei, Fj ];
step (3), calculating the number of secondary electrons corresponding to different electron beam parameter combinations
Calculating the number { Bij } of secondary electrons corresponding to each parameter combination [ Ei, Fj ];
step (4) primarily selecting electron beam parameter combination
Step (5), actually measuring the luminous performance of the initially selected electron beam parameter combination
Actually measuring the luminous performance of the initially selected electron beam parameter combination, including an optical power value, optical power output stability and an effective luminous efficiency value;
step (6) obtaining electron beam parameter combination with overall optimal luminescence performance
And acquiring an electron beam parameter combination with globally optimal luminescence performance, wherein the electron beam parameter combination comprises three single-term champion excitation parameters.
2. The method of claim 1, wherein: in the step (1), according to the dislocation threshold energy values of various atoms in the semiconductor luminescent material for testing, the minimum electron energy which can cause atom dislocation damage is calculated by utilizing a collision formula considering relativistic effect, electron mass and mass of each atom, and is marked as Em1。
3. The method of claim 2, wherein: in the step (1), the minimum electron energy E causing atom dislocation damage is calculatedm1(ii) a The electron energy is electron passing voltage Em1Kinetic energy obtained after volt acceleration, not considering the rest energy of electrons; the electron beam generating device can provide electron energy with maximum value E incident on the surface of the semiconductor luminescent materialm2(ii) a Selection of Em1And Em2Small value of (5) as the upper limit E of the electron energy rangex；
The forbidden band width of the semiconductor luminescent material is marked as Eg, and the electron energy corresponding to 2.8 × Eg is marked as En1(ii) a The minimum value of the energy of the electrons incident on the surface of the semiconductor luminescent material provided by the electron beam generating device is En2(ii) a Selection of En1And En2Middle large value as the lower limit E of the electron energy rangenThe electron energy range is [ E ]n，Ex]；
When the diameter of the electron beam spot is the same as that of the semiconductor luminescent material, the maximum value and the minimum value of the average flux density of the electron beam provided by the electron beam generating device are the range [ Fn, Fx ] of the electron beam flux density; the electron beam average flow density is the ratio of the electron beam flow value to the electron beam spot area.
4. The method of claim 1, wherein: in step (2), sampling from the minimum interval E and Δ F at a certain interval to obtain the electronic energy measurementSequence of arithmetic numbers { E ] for equal interval sampling in test rangeiJ =1,2,. M, for M terms; acquiring an arithmetic sequence { F) for sampling the electron beam flow density test range at equal intervalsjN, N terms;
from series of arithmetic numbers { E }iBeginning with the first item of { E }iEach of the terms is respectively sequentially and equally differenced with the sequence of { F }jThe items from the first item are combined to obtain k [ E ] in sequencei, Fj]Combinations where k = M × N, each combination being referred to as one electron beam parameter combination.
5. The method of claim 1, wherein: in the step (3), a Monte Carlo model is utilized to simulate the scattering process of electrons in the semiconductor luminescent material, and the number of secondary electrons is calculated; wherein, the Bohm quantum track method simulates the process that the incident electron inelastically scatters and excites the inner layer electron of the sample atom to generate high-speed secondary electrons; mott's elastic scattering cross-section model calculates the elastic scattering process that processes high-speed "secondary" electrons and cascades to produce low-energy "secondary" electrons; calculating the attenuation of high-speed secondary electrons and the inelastic scattering process for cascading to generate low-energy secondary electrons by utilizing a Full-Penn Algorithm dielectric function method;
calculating the coordinate positions and energy deposition distribution of all energy secondary electrons and holes after the electron beams are incident to the semiconductor luminescent material by using a Monte Carlo model; starting from a first electron beam parameter combination, calculating the steady state total quantity of low-energy secondary electrons which cannot excite other valence electron states when the electron energy incident to the surface of the semiconductor luminescent material and the electron beam flow density are sequentially set as numerical values in each parameter combination by combining a semiconductor luminescent material three-dimensional structure constructed by a solid structure geometric method; sequentially obtaining k total values to form a sequence, denoted as { B }ij}。
6. The method of claim 5, wherein: in step (4), { BijMaximum value BmaxThe corresponding electron beam parameter combination is recorded as [ E ]max，Fmax]；Bij/BmaxThe weight is set to W1; b isij/(Ei*Fj) Is recorded as BEmax，Bij/(BEmax*Ei*Fj) The weight is set to W2, and a performance index Z is calculatedijComprises the following steps:
Zij=W1*Bij/Bmax+W2*Bij/(BEmax*Ei*Fj)；
calculated culling [ Emax，Fmax]Corresponding Z of the remaining k-1 electron beam parameter combinationsijAnd arranged in descending order and marked as the number sequence { Zn1,2,3, …, k-1, extracting { Z ═ ZnThe combination of electron beam parameters corresponding to the preceding x-1 term, x is greater than or equal to 4, plus [ E ]max，F max]As the selected x initial selection parameter combinations; the weight value W1 corresponds to the requirement of luminous power, and W2 corresponds to the requirement of electro-optical conversion efficiency.
7. The method of claim 6, wherein: in the step (5), the electron beam generating devices are sequentially adjusted to enable the electron energy and the electron beam flux density incident to the surface of the semiconductor luminescent material to be respectively combined with the x primary selection parameters, and the light power measured values P corresponding to different parameter combinations are obtainedijOptical power output stability OSijEffective luminous efficiency value PEij=Pij/(Ei*FjS), where S is the area of the upper surface of the sample;
the light power output stability is the average value/peak value-peak value of light power measured values within 100 hours of light emitting time after stable light emitting; the maximum value of the optical power is denoted as PmaxThe maximum value of the light power output stability is recorded as OSmaxThe maximum value of the effective luminous efficiency is recorded as PEmax。
8. The method of claim 6, wherein: in the step (6), the electron beam parameter combination corresponding to the maximum value of the corresponding optical power, the maximum value of the effective luminous efficiency and the maximum value of the optical power output stability is taken out as threeIndividual champion parameters; calculating the comprehensive luminescence property OPij：
OPij=W1*Pij/Pmax+W2*PEij/PEmax+W3*OSij/OSmax；
The weight W3 corresponds to the requirement of optical power output stability; calculating the residual x-3 [ E ] after eliminating three single champion excitation parametersi，Fj]X-3 OP corresponding to the combination of excitation parametersijAnd arranged in descending order and marked as the sequence of numbers { OPn}，n＝1,2,3,
X-3, extraction series { OPnE corresponding to the first termi，Fj]The combination plus the three individual champion parameters is the final selected combination of 4 electron beam parameters for semiconductor illumination.
9. A kind of electron beam excitates the test platform of luminescent property of the semiconductor, characterized by that: the device comprises a vacuum cavity, an electron beam generating device, an anode target surface, a light power measuring device and a vacuum pump, wherein the anode target surface of the electron beam generating device is a metal plate with a circular hole in the center, and the thickness of the metal plate is less than 1 mm; the semiconductor luminescent material is cylindrical, the column side is installed in the central hole of the anode metal plate by using conductive and heat-conducting silica gel, electron beams are incident to the semiconductor luminescent material from one bottom surface, accumulated electrons flow to the anode of the metal plate from the semiconductor luminescent material through the conductive and heat-conducting silica gel and form a loop with the emission of the electron beams of the cathode, and the light measuring probe of the light power measuring device points to the other bottom surface of the cylindrical semiconductor luminescent material and is fixed with the position of the semiconductor luminescent material.
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