CN112582545A - Laminated perovskite solar cell and preparation method thereof - Google Patents

Laminated perovskite solar cell and preparation method thereof Download PDF

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CN112582545A
CN112582545A CN202011467791.0A CN202011467791A CN112582545A CN 112582545 A CN112582545 A CN 112582545A CN 202011467791 A CN202011467791 A CN 202011467791A CN 112582545 A CN112582545 A CN 112582545A
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solar cell
perovskite
transport layer
tin oxide
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CN112582545B (en
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秦校军
赵志国
赵东明
肖平
董超
熊继光
刘娜
刘家梁
王百月
冯笑丹
梁思超
王森
张�杰
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Huaneng Clean Energy Research Institute
Huaneng Renewables Corp Ltd
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Huaneng Renewables Corp Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

The invention discloses a laminated perovskite solar cell and a preparation method thereof, and belongs to the technical field of solar cell devices. The solar cell comprises a high-transparency glass layer, a transparent electrode layer, a hole transport layer, a first perovskite active layer, a first electron transport layer, a multifunctional tin oxide layer, a second perovskite active layer, a second electron transport layer and a metal counter electrode layer which are sequentially connected to form an integral solar device; the thickness of the multifunctional tin oxide layer is 10-50nm, and the diameter of the tin oxide nanoparticles in the multifunctional tin oxide layer is 5-20 nm. A narrow-band gap perovskite solar cell is used as a bottom cell, a wide-band gap perovskite solar cell is used as a top cell to form a composite laminated cell structure, and compared with the traditional perovskite solar cell structure, a composite layer, a transparent electrode and a charge transmission layer in an original structure are replaced by a layer of tin oxide nano material film. On the premise of obtaining the high-performance solar cell, the structure and the manufacturing process are simplified, and the cost and the energy consumption are greatly reduced.

Description

Laminated perovskite solar cell and preparation method thereof
Technical Field
The invention belongs to the technical field of solar cell devices, and relates to a laminated perovskite solar cell and a preparation method thereof.
Background
Perovskite solar cells (perovskite solar cells) are solar cells using perovskite type organic metal halide semiconductors as light absorbing materials, and belong to the third generation solar cells, which are also called new concept solar cells. Upon exposure to sunlight, the perovskite layer first absorbs photons to generate electron-hole pairs. These carriers either become free carriers or form excitons due to differences in exciton binding energy of the perovskite material. Furthermore, because these perovskite materials tend to have a lower probability of carrier recombination and higher carrier mobility, the diffusion distance and lifetime of carriers are longer. Then, the non-recombined electrons and holes are respectively collected by an electron transport layer and a hole transport layer, namely the electrons are transported to the equal electron transport layer from the perovskite layer and are finally collected by the ITO; the holes are transported from the perovskite layer to the hole transport layer and finally collected by the metal electrode, and of course, the processes are not always accompanied by some losses of carriers, such as reversible recombination of electrons of the electron transport layer with holes of the perovskite layer, recombination of electrons of the electron transport layer with holes of the hole transport layer (in the case of a non-dense perovskite layer), and recombination of electrons of the perovskite layer with holes of the hole transport layer. These carrier losses should be minimized to improve the overall performance of the cell. Finally, the photocurrent is generated through the electrical circuit connecting the FTO and the metal electrode.
The perovskite solar cell is well developed, but a plurality of key factors can restrict the development of the perovskite solar cell, and the manufacturing cost is high due to high process complexity and energy consumption.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to provide a stacked perovskite solar cell and a method for manufacturing the same, which can simplify the structure and the manufacturing process and greatly reduce the cost and energy consumption on the premise of obtaining a high-performance solar cell.
The invention is realized by the following technical scheme:
the invention discloses a laminated perovskite solar cell, which comprises a high-transparency glass layer, a transparent electrode layer, a hole transport layer, a first perovskite active layer, a first electron transport layer, a multifunctional tin oxide layer, a second perovskite active layer, a second electron transport layer and a metal counter electrode layer which are sequentially connected to form the whole solar cell; the thickness of the multifunctional tin oxide layer is 10-50nm, and the diameter of the tin oxide nanoparticles in the multifunctional tin oxide layer is 5-20 nm.
Preferably, the transparent electrode layer is FTO, ITO or AZO.
Preferably, the material of the hole transport layer is Spiro-OMeTAD, PTAA, nickel oxide, cuprous iodide, PEDOT: PSS, polytereene, polythiophene, polysilane, triphenylmethane, triarylamine, hydrazone, pyrazoline, carbazole, or butadiene, and the thickness of the hole transport layer is 100 nm.
Preferably, the material of the first perovskite active layer is FAPBBr3The thickness of the first perovskite active layer is 300-600 nm.
Preferably, the material of the first electron transport layer and the second electron transport layer is PC71BM, the thickness of the first electron transport layer is 200-400 nm.
Preferably, the material of the second perovskite active layer is MAPbI3The thickness of the second perovskite active layer is 500-750 nm.
Preferably, the material of the metal counter electrode layer is gold, silver, aluminum or platinum, and the thickness of the metal counter electrode layer is 80-150 nm.
The invention discloses a preparation method of the laminated perovskite solar cell, which comprises the following steps:
step 1: preparing a hole transport layer on the high-transparency glass layer attached with the transparent electrode layer by adopting a scraper coating method;
step 2: preparing a first perovskite active layer on the hole transport layer;
and step 3: preparing a first electron transport layer on the first perovskite active layer by adopting a scraper coating method;
and 4, step 4: preparing a multifunctional tin oxide layer on the first electron transport layer by adopting atomic deposition, vapor deposition, magnetron sputtering or spin coating;
and 5: preparing a second perovskite active layer on the multifunctional tin oxide layer;
step 6: preparing a second electron transport layer on the second perovskite active layer by adopting a scraper coating method;
and 7: and preparing a metal counter electrode layer on the second electron transmission layer by adopting a thermal evaporation method, a magnetron sputtering method, an atomic deposition method, a laser deposition method or a roll-to-roll method.
Preferably, the spin coating method is adopted in the step 4, and specifically comprises the following steps: taking the suspension of tin oxide nanoparticles with the diameter of 5-20nm as spin coating liquid, and spin-coating the suspension on the substrate for 30-60s at the rotating speed of 3500-5000 rpm.
Preferably, steps 2 and 5 employ spin coating, vapor deposition, magnetron sputtering, or a roll-to-roll method.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention discloses a laminated perovskite solar cell, which takes a narrow-band gap perovskite solar cell as a bottom cell and a wide-band gap perovskite solar cell as a top cell to form a composite laminated cell structure2) A nanomaterial film. Tin oxide has a low conduction band energy level and high carrier mobility, and can effectively extract charges in the perovskite material and conduct the charges to an external circuit. On the other hand, the tin oxide film prepared under the appropriate conditions can also be used as a transparent electrode of a solar cell, the square resistance of the tin oxide film is less than 15 omega, and meanwhile, the light transmittance can reach more than 85 percent. The laminated solar cell constructed on the basis can simplify the structure of the solar cell.
According to the preparation method of the laminated perovskite solar cell disclosed by the invention, the multifunctional tin oxide layer can be prepared under a low temperature condition (less than 200 ℃), and the cost, the energy consumption and the process are greatly reduced and simplified. Other functional layers can also be prepared by adopting a mature process such as a coating method, so that the method is suitable for being popularized and used as a manufacturing process of large-area flexible products, and the manufacturing cost, the energy consumption and the process are greatly reduced and simplified.
Drawings
Fig. 1 is a front view of the overall structure of the present invention.
In the figure, 102-high transparent glass layer, 104-transparent electrode layer, 106-hole transport layer, 108-first perovskite active layer, 110-first electron transport layer, 112-multifunctional tin oxide layer, 114-second perovskite active layer, 116-second electron transport layer, 118-metal counter electrode layer.
Detailed Description
The invention is described in further detail below with reference to the following figures and examples:
referring to fig. 1, the stacked perovskite solar cell of the present invention comprises a high-transparency glass layer 102, a transparent electrode layer 104, a hole transport layer 106, a first perovskite active layer 108, a first electron transport layer 110, a multifunctional tin oxide layer 112, a second perovskite active layer 114, a second electron transport layer 116 and a metal counter electrode layer 118, which are connected in sequence to form an integral solar cell device.
High-transmittance glass layer 102 and transparent electrode layer 104: the product can be used in large-scale products, an FTO (or ITO, AZO and the like) transparent electrode deposited on high-transparency glass is used as a substrate of a device, the area is not limited, and the shape, the area, the thickness and the like of the FTO and other transparent electrodes can be controlled by a process means; before use, the surface of the electrode is sequentially treated by deionized water, acetone and isopropanol for 15 minutes, then cleaned by an ultraviolet light cleaning machine for 10 minutes, and dried by nitrogen flow for later use.
The hole transport layer 106 prepared on the transparent electrode layer 104 is characterized by an organic and inorganic material that is energy level-matched with the perovskite active material, such as Spiro-OMeTAD, PTAA, nickel oxide, cuprous iodide, PEDOT: PSS, polyparaphenylenes, polythiophenes, polysilanes, triphenylmethanes, triarylamines, hydrazones, pyrazolines, carbazoles, butadienes, and the like. In particular, the layer was prepared using a knife coating method: the slurry used was commercial PEDOT: PSS (AI 4083) in aqueous solution, using isopropanol, according to a 1:3, dilution in proportion, wherein the coating speed of a scraper is 10-35mm/s, and is preferably 20 mm/s; the coating temperature is 40-80 ℃, and preferably 60 ℃; the distance between the scraper and the substrate is 50 mu m; after coating, annealing at 80-100 deg.C for 10-20 min, preferably 90 deg.C for 15min in nitrogen. The resulting hole-transporting layer 106 is approximately 100nm thick.
A first perovskite active layer 108 of the structure ABX prepared on the hole transport layer 106nY3-n(A ═ Cs or RNH3Or mixtures thereof in any proportion, R is a suitable hydrocarbyl group; b ═ Pb or Sn or a mixture thereof in any proportion; x, Y ═ Cl, Br, I; n is a real number of 0 to 3), preferably FAPBR is used3Usually by spin coatingMethods such as vapor deposition, magnetron sputtering, and the like, or roll-to-roll processes suitable for flexible and large-scale production, i.e., slurry of the active material is formed by slit coating, blade coating, screen printing, gravure printing, inkjet coating, inkjet printing, and the like. In particular, in the blade coating method, DMF is used as a solvent, and the perovskite is prepared into slurry with the mass fraction of 15-30%, preferably 25%; the blade coating speed is 10-40mm/s, preferably 20 mm/s; the coating temperature is room temperature; the distance between the scraper and the substrate is 50 mu m; after coating, annealing at 100-150 ℃ for 20-40 min, preferably 120 ℃ for 30min in nitrogen. The thickness of the obtained first perovskite active layer is about 300-600 nm.
A first electron transport layer 110 of PC prepared on the first perovskite layer 10871BM, the slurry is a chloroform dispersion of 15-20 g/L. The blade coating speed is 15-25mm/s, preferably 20 mm/s; the coating temperature is room temperature; the distance between the scraper and the substrate is 80-100 mu m; after coating, the coating was naturally dried in nitrogen for 20 minutes. The thickness is about 200-400 nm.
Multifunctional tin oxide (SnO)2) Layer 112: the core part of the invention can be prepared by methods such as atomic deposition, vapor deposition, magnetron sputtering, spin coating and the like. In particular, the layer is prepared by a solution spin coating method, commercial tin oxide nanoparticle (diameter 5-20nm) suspension can be directly used as spin coating liquid, tin oxide layers (10-50nm) with different thicknesses can be prepared on a glass substrate by using spin coating parameters of 3500-5000rpm and 30-60s, and particularly, the multifunctional tin oxide layer 112 with the thickness of about 10-15nm can be obtained by using spin coating parameters of 5000rpm and 60 s.
In multifunctional tin oxide (SnO)2) A second perovskite active layer 114, of structure ABX, prepared on layer 112nY3-n(A ═ Cs or RNH3Or mixtures thereof in any proportion, R is a suitable hydrocarbyl group; b ═ Pb or Sn or a mixture thereof in any proportion; x, Y ═ Cl, Br, I; n is a real number from 0 to 3), a perovskite battery core layer with a narrow band gap is usually selected, and MAPbI is preferably used3(ii) a The coating is usually formed by spin coating, vapor deposition, magnetron sputtering, and the like, and can also be applied to flexible and large-scale productionThe prepared roll-to-roll process is prepared by forming a slurry of the active material by slit coating, blade coating, screen printing, gravure printing, inkjet coating, inkjet printing, and the like. In particular, in the blade coating method, the solvent is DMF, and the perovskite is prepared into slurry with the mass fraction of 20-30%, preferably 25%; the blade coating speed is 30-60mm/s, preferably 50 mm/s; the coating temperature is room temperature; the distance between the scraper and the substrate is 100 mu m; after coating, annealing at 100-150 ℃ for 20-60 min, preferably 120 ℃ for 40min in nitrogen. The resulting second perovskite active layer 114 has a thickness of about 500-750 nm.
A second electron transport layer 116 made of PC on the second perovskite layer 11471BM, the slurry is a chloroform dispersion of 15-20 g/L. The blade coating speed is 15-25mm/s, preferably 20 mm/s; the coating temperature is room temperature; the distance between the scraper and the substrate is 80-100 mu m; after coating, the coating was naturally dried in nitrogen for 20 minutes. The thickness is about 200-400 nm.
The metal counter electrode layer 118 formed on the second electron transport layer 116 is made of metal such as gold, silver, aluminum, platinum, and the like, and can be prepared by thermal evaporation, magnetron sputtering, atomic deposition, laser deposition, and the like, and in the flexible preparation process, the metal counter electrode layer can also be prepared by using a roll-to-roll process, that is, a slurry of a conductive metal electrode material is formed by slit coating, blade coating, screen printing, gravure printing, inkjet coating, inkjet printing, and the like. In particular, the material used is commercial silver nanowire sol, the solvent is isopropanol, the concentration is 20g/L, the diameter of the silver nanowire is about 100nm, and the length of the silver nanowire is 50-150 μm. The blade coating speed is 20-50mm/s, preferably 40 mm/s; the coating temperature is room temperature; the distance between the scraper and the substrate is 50-100 mu m; after coating, annealing at 80-100 deg.C for 10-20 min, preferably 85 deg.C for 20 min in nitrogen. The thickness is about 80-150 nm.
The preparation process according to the invention is further explained below by means of a specific example:
taking a high-transmittance glass substrate attached with a transparent conductive layer, wherein the area of the high-transmittance glass substrate is 3cm multiplied by 3 cm; preparing PEDOT: PSS aqueous solution, diluting with isopropanol at a ratio of 1:3, and coating on the transparent conductive electrode by knife coating method under the condition that20mm/s, coating temperature 60 ℃, distance between a scraper and a substrate of 50 mu m, annealing for 15min at 90 ℃ under nitrogen atmosphere in a glove box. FAPBBr3Preparing a solution with the mass fraction of 25%, wherein DMF is used as a solvent; the coating speed of a scraper is 20 mm/s; the coating temperature is room temperature; the distance between the scraper and the substrate is 50 mu m; after coating, annealing at 120 ℃ for 30min in nitrogen. Compounding of PC71A chloroform dispersion with BM concentration of 15 g/L. The coating speed of a scraper is 20 mm/s; the coating temperature is room temperature; the distance between the scraper and the substrate is 80 mu m; after coating, the coating was naturally dried in nitrogen for 20 minutes. The preparation of the tin oxide layer was carried out on a glass substrate at 5000rpm for 60s using a suspension of tin oxide nanoparticles (diameter 5-20nm) as spin coating liquid directly. MAPbI is added3Preparing a solution with the mass fraction of 25%, wherein DMF is used as a solvent; the coating speed of a scraper is 50 mm/s; the coating temperature is room temperature; the distance between the scraper and the substrate is 100 mu m; after coating, annealing at 120 ℃ for 40min in nitrogen. Compounding of PC71A chloroform dispersion with BM concentration of 15 g/L. The coating speed of a scraper is 20 mm/s; the coating temperature is room temperature; the distance between the scraper and the substrate is 80 mu m; after coating, the coating was naturally dried in nitrogen for 20 minutes. Finally, a gold back electrode with the thickness of 100nm is evaporated in a thermal evaporation mode.
The effective area of the obtained laminated cell is 4.0cm2The detection shows that the overall photoelectric conversion efficiency of the battery can reach 10-12% on average, and the highest efficiency can reach 14.6%.
It should be noted that the above description is only one embodiment of the present invention, and all equivalent changes of the system described in the present invention are included in the protection scope of the present invention. Persons skilled in the art to which this invention pertains may substitute similar alternatives for the specific embodiments described, all without departing from the scope of the invention as defined by the claims.

Claims (10)

1. The laminated perovskite solar cell is characterized by comprising a high-transparency glass layer (102), a transparent electrode layer (104), a hole transport layer (106), a first perovskite active layer (108), a first electron transport layer (110), a multifunctional tin oxide layer (112), a second perovskite active layer (114), a second electron transport layer (116) and a metal counter electrode layer (118) which are sequentially connected to form the whole solar cell; the thickness of the multifunctional tin oxide layer (112) is 10-50nm, and the diameter of the tin oxide nanoparticles in the multifunctional tin oxide layer (112) is 5-20 nm.
2. The laminated perovskite solar cell according to claim 1, characterized in that the transparent electrode layer (104) is FTO, ITO or AZO.
3. Laminated perovskite solar cell according to claim 1, characterized in that the material of the hole transport layer (106) is Spiro-OMeTAD, PTAA, nickel oxide, cuprous iodide, PEDOT: PSS, polytereene, polythiophene, polysilane, triphenylmethane, triarylamine, hydrazone, pyrazoline, carbazole, or butadiene, and the thickness of the hole transport layer (106) is 100 nm.
4. The tandem perovskite solar cell according to claim 1, wherein the material of the first perovskite active layer (108) is FAPbBr3The thickness of the first perovskite active layer (108) is 300 to 600 nm.
5. The tandem perovskite solar cell according to claim 1, wherein the material of the first electron transport layer (110) and the second electron transport layer (116) is PC71BM, the thickness of the first electron transport layer (110) is 200 to 400 nm.
6. The tandem perovskite solar cell according to claim 1, wherein the material of the second perovskite active layer (114) is MAPbI3The thickness of the second perovskite active layer (114) is 500-750 nm.
7. The laminated perovskite solar cell according to claim 1, wherein the material of the metal counter electrode layer (118) is gold, silver, aluminum or platinum, and the thickness of the metal counter electrode layer (118) is 80 to 150 nm.
8. The method for preparing a tandem perovskite solar cell according to any one of claims 1 to 7, comprising the steps of:
step 1: preparing a hole transport layer (106) on the high-transparency glass layer (102) with the transparent electrode layer (104) by adopting a doctor blade coating method;
step 2: preparing a first perovskite active layer (108) on the hole transport layer (106);
and step 3: preparing a first electron transport layer (110) on the first perovskite active layer (108) by a doctor blade coating method;
and 4, step 4: preparing a multifunctional tin oxide layer (112) on the first electron transport layer (110) by atomic deposition, vapor deposition, magnetron sputtering or spin coating;
and 5: preparing a second perovskite active layer (114) on the multifunctional tin oxide layer (112);
step 6: preparing a second electron transport layer (116) on the second perovskite active layer (114) by a blade coating method;
and 7: and preparing a metal counter electrode layer (118) on the second electron transport layer (116) by adopting thermal evaporation, magnetron sputtering, atomic deposition, laser deposition or a roll-to-roll method.
9. The method for manufacturing a laminated perovskite solar cell according to claim 8, wherein step 4 employs a spin coating method, specifically: taking the suspension of tin oxide nanoparticles with the diameter of 5-20nm as spin coating liquid, and spin-coating the suspension on the substrate for 30-60s at the rotating speed of 3500-5000 rpm.
10. The method for preparing a laminated perovskite solar cell according to claim 8, wherein the steps 2 and 5 are spin coating, vapor deposition, magnetron sputtering or roll-to-roll methods.
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CN113178521A (en) * 2021-04-19 2021-07-27 南京大学 Design for improving stability of perovskite solar cell module
CN113889574A (en) * 2021-12-03 2022-01-04 中国华能集团清洁能源技术研究院有限公司 Preparation method and application of perovskite material layer in concentrating perovskite solar cell
CN116669439A (en) * 2023-07-31 2023-08-29 宁德时代新能源科技股份有限公司 Solar cell, preparation method thereof, photovoltaic module and photovoltaic device

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