CN112582241B - Power supply device for grid-control electron gun, electron gun system and power supply method - Google Patents
Power supply device for grid-control electron gun, electron gun system and power supply method Download PDFInfo
- Publication number
- CN112582241B CN112582241B CN202011470298.4A CN202011470298A CN112582241B CN 112582241 B CN112582241 B CN 112582241B CN 202011470298 A CN202011470298 A CN 202011470298A CN 112582241 B CN112582241 B CN 112582241B
- Authority
- CN
- China
- Prior art keywords
- layer structure
- power supply
- electron gun
- inner layer
- supply device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/485—Construction of the gun or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
- H05H7/22—Details of linear accelerators, e.g. drift tubes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H9/00—Linear accelerators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/48—Electron guns
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The invention relates to a power supply device for a grid-controlled electron gun, an electron gun system and a power supply method. The power supply device includes: the first outer layer structure is a rotary electric conductor, one end of the first outer layer structure is provided with a grid interface, the other end of the first outer layer structure is connected with a first power input interface, and a microwave input interface is arranged between the two ends of the first outer layer structure; the first inner layer structure is a rotary conductor, one end of the first inner layer structure is provided with a cathode interface, and the other end of the first inner layer structure is connected with a second power input interface; the second inner layer structure is a rotary conductor, one end of the second inner layer structure is provided with a filament interface, and the other end of the second inner layer structure is connected with a third power supply input interface; the first outer layer structure, the first inner layer structure and the second inner layer structure are coaxially arranged, the second inner layer structure is located at the innermost layer, and the first outer layer structure is arranged outside the first inner layer structure at intervals. The invention provides a dual-mode power supply device, which meets the requirement of the electron gun of the type on power supply for direct current microwave, designs and optimizes an electron gun system and can obtain a high-frequency beam group with higher quality.
Description
Technical Field
The invention relates to the technical field of electron linear accelerators, in particular to a power supply device for a grid-controlled electron gun, an electron gun system and a power supply method.
Background
The superconducting electron linear accelerator with high average flow intensity, high average power and stable operation has very important application in the fields of medicine, radiation and the like. Medical isotopes are mostly prepared by a reactor method because of high atomic number, and the production efficiency of the isotopes is extremely low and the economic benefit is poor because the average beam current intensity and the beam energy are low in the early accelerator production of the medical isotopes, so that the medical isotopes cannot be put into industrial production. Along with the continuous development of superconducting technology in recent years, a superconducting electron linear accelerator has great progress, and the beam energy of the accelerator is high, so that the large-scale production of medical isotopes by utilizing the accelerator becomes possible.
A common electron source of a superconducting electron linear accelerator is a photocathode electron gun, and the electron gun has high beam quality, and the repetition frequency of the electron gun is continuously improved along with the progress of a laser technology. However, the average beam current is low, the vacuum degree and ion back-bombardment of the electron gun shorten the service life of the photocathode, and the photocathode is limited in relevant production applications. The economical and efficient production of medical isotopes requires milliampere-magnitude average current intensity and megawatt-magnitude beam power to target and generate photons, so that atomic nuclei with high atomic numbers are photocracked. In the field of infrared free electron laser, the requirement on the quality of accelerator beams is not high, and higher average beam intensity is required to generate higher laser brightness. In the field of irradiation processing radio frequency accelerators, electron injectors with time structure, such as petal-shaped accelerators with axial cavity structure, and the like are needed. In several of the above mentioned application fields, the high repetition frequency hot cathode electron gun has absolute advantages over the photocathode electron gun, and compared with the photocathode, the hot cathode has the characteristics of long service life, good stability and mature technology. Therefore, scientists in various countries have focused their attention on the research of high-repetition-frequency hot cathode electron gun. For example, a High-frequency chopper is subsequently loaded on a High-voltage hot cathode electron gun by using a Japanese KEK (High Energy accumulator Research Organization), and the beam current is modulated into a pulse time structure; injecting 1GHz microwave into a gap between a cathode and a grid by using FeClian Electron lasers for induced experiments, and leading out an Electron beam group with a specific phase by using the inhibiting effect of direct current negative bias loaded on the grid; the frequency of the microwave injected between the cathode and the grid of the grid-controlled hot cathode electron gun developed by Seoul National University in Korea is 2856MHz, the microwave is injected by adopting a resonant cavity mode, the repetition frequency of the microwave is 30Hz, the beam flow average intensity is 2.7 muA, and the beam cluster energy is 50KeV. The microwave frequency of the gate-controlled electron gun designed and manufactured by BINP in Russia is 116.3MHz, and the microwave repetition frequency is 50Hz, so that the gate-controlled electron gun has guiding significance in a lower frequency band compared with the gate-controlled electron guns manufactured by other mechanisms.
At present, the following problems mainly exist in the field of microwave grid control: when microwaves are fed between the cathode and the grid, the structure is closed, and a detailed and reasonable scheme is needed for connecting each direct current voltage into the cathode when the microwaves are transmitted.
In addition, the coaxial power supply structure of the cathode of the electron gun may not be a standard 50-ohm device, does not meet the matching condition, and needs to design a specific transmission structure to complete impedance matching so as to ensure that the microwave can be efficiently fed into the space between the cathode and the grid from a specific microwave power source.
Therefore, the invention aims to explore a power supply device, an electron gun system and a power supply method thereof, wherein the power supply device is convenient to process and use, has a stable structure, and can better realize that each direct current voltage is connected into the cathode of the electron gun when microwaves are transmitted, and further can realize impedance matching.
Disclosure of Invention
In view of the above, the present invention is directed to a power supply device, an electron gun system and a power supply method for a grid-controlled electron gun, which can better connect each dc voltage into the cathode of the electron gun when microwaves are transmitted, and further provide an impedance-matched power supply device, an impedance-matched electron gun system and a power supply method thereof.
The invention first proposes a power supply device for a gated electron gun, said power supply device comprising:
the first outer layer structure is a rotary conductor, one end of the first outer layer structure is provided with a grid interface, the other end of the first outer layer structure is connected with a first power input interface, and a microwave input interface communicated with a gap between the first inner layer structure and the layer is arranged between the two ends of the first outer layer structure;
the first inner layer structure is a rotary conductor, and is configured to be provided with a cathode interface at one end and be connected with a second power input interface at the other end;
the second inner layer structure is a rotary conductor and is configured to be provided with a filament interface at one end and be connected with a third power input interface at the other end;
the first outer layer structure, the first inner layer structure and the second inner layer structure are coaxially arranged, the second inner layer structure is located on the innermost layer, the first inner layer structure is arranged outside the second inner layer structure at intervals, and the first outer layer structure is arranged outside the first inner layer structure at intervals.
According to one embodiment of the present invention, the length range of the first inner layer structure between the position corresponding to the microwave input interface and the cathode interface is configured as two connected sections with different outer diameters, the section closer to the cathode interface is a first section, the other section is a second section, the inner diameter and the length of the first section are designed according to the real impedance in the composite impedance of the microwave input to the cathode and the grid, and the second section is a 1/4 wavelength matching section which matches the impedance to a required value; the first outer structure has a uniform inner diameter over the length.
According to an embodiment of the present invention, a first insulating filling layer having a length less than or equal to the length range is disposed between the first outer layer structure and the first inner layer structure within the length range between the cathode interface and the joint of the two segments, and preferably, the first insulating filling layer is made of polytetrafluoroethylene.
According to one embodiment of the invention, the first outer layer structure comprises a front part and a rear part with adjustable connecting positions, namely a first outer layer front part and a first outer layer rear part, respectively, and the first inner layer structure comprises a front part and a rear part with adjustable connecting positions, namely a first inner layer front part and a first inner layer rear part; preferably, the front-rear portion junction of the first outer layer structure corresponds to the front-rear portion junction of the first inner layer structure; preferably, the junction of the front and rear portions of the first inner layer structure is located on the first section.
According to an embodiment of the present invention, insulating medium layers are respectively disposed between the first outer layer structure and the first inner layer structure and between the first outer layer structure and the second inner layer structure, and preferably, the insulating medium layers are made of polytetrafluoroethylene.
According to an embodiment of the invention, the power supply device further comprises a dc-block provided at the microwave input interface for preventing a voltage between the first outer structure and the first inner structure from being conducted to the microwave input interface.
According to one embodiment of the present invention, the first outer layer structure, the first inner layer structure and the second inner layer structure are isolated at the other end of the power input by an insulator to form independent potentials, respectively.
According to an embodiment of the present invention, the second power input interface is a coaxial inner diameter terminal, and is connected to the other end of the first inner layer structure through a first overlapping conductor, the first power input interface is a coaxial housing terminal, and is connected to the other end of the first outer layer structure through a second overlapping conductor, the first overlapping conductor and the second overlapping conductor are both disposed between the first inner layer structure and the first outer layer structure, and are disposed at intervals along the length direction of the power supply device, and are respectively connected to the first outer layer structure or the first inner layer structure at different positions along the radial direction of the power supply device; the third power input interface is a filament binding post; preferably, the gate interface of the first outer layer structure and the cathode interface of the first inner layer structure are both petal-shaped elastic structures.
The invention also provides an electron gun system for grid control, which comprises a microwave grid control electron gun and the power supply device for the grid control electron gun, wherein the power supply device is configured to load grid voltage to the electron gun, supply power to a filament and transmit microwaves between negative grids; preferably, the electron gun is connected to the power supply device by connecting a coaxial base.
The invention also provides a method for supplying power and inputting microwaves to the grid-controlled electron gun by using the power supply device, which comprises the following steps:
inputting microwaves to the cathode and the gate of the electron gun through a microwave input interface and through a gap between the first inner layer structure and the first outer layer structure;
loading a grid voltage on the electron gun through a first power input interface of the first outer layer structure and a second power input interface of the first inner layer structure; and supplying power to the filament of the electron gun through the second power input interface of the first inner layer structure and the third power input interface of the second inner layer structure.
According to an embodiment of the invention, the method further comprises designing the structure of the power supply device to achieve impedance matching with the cathode of the electron gun; preferably, the first inner layer structure and the first outer layer structure are respectively set to be structures with adjustable lengths at the first section position, so that a tuning function is added.
According to one embodiment of the invention, the impedance matching of the supply means is performed by means of a smith chart such that the impedance of the microwave input interface to the supply means at the cathode of the electron gun corresponds to a matching value.
According to an embodiment of the invention, the method further comprises the impedance of the power supply device when using the smith chart is obtained as follows:
wherein Z is 0 Representing the impedance value per unit length, D being the inner diameter of the microwave transmission of the power supply device, D being the outer diameter of the microwave transmission, epsilon r The impedance value of the power supply device is changed by changing the above parameters and the length of the power supply device for the dielectric constant.
According to an embodiment of the invention, the method further comprises:
the length range of the first inner layer structure between the position corresponding to the microwave input interface and the cathode interface is configured into two connected sections with different outer diameters, the section close to the cathode interface is a first section, the other section is a second section, the inner diameter and the length of the first section are designed according to real impedance in composite impedance of the microwave input to the cathode and the grid, and the second section is a 1/4 wavelength matching section which matches the impedance to a required value; the inner diameter of the first outer structure is consistent over the length.
The invention can realize that the cathode, the grid and the filament power supply are at different potentials and near to transmit microwaves to the cathode load without reflection. Compared with the direct current grid control electron gun, the microwave grid control electron gun can provide a beam group with high repetition frequency, does not need a bunch and a chopper to modulate a beam group time structure, greatly saves space and cost, can stably run for a long time, and has higher beam current intensity.
The power supply device has the advantages of less sections, small processing difficulty, compact structure, consideration of dual-mode transmission of the power supply and the microwave, impedance matching, convenient operation and use, simple packaging, good stability and small transmission loss.
The implementation mode of the adjustable connection position of the power supply device only needs partial movement during tuning, integrity is not damaged, and the structure is more stable.
The dielectric material selected by the invention has better sealing property, smaller friction coefficient, larger Young modulus, difficult deformation and convenient processing.
In a word, the invention provides a solution for the circuit connection mode of the electron gun, designs a dual-mode power supply device, meets the requirement of the electron gun of the type on power supply for direct current microwave, designs and optimizes an electron gun system, and can obtain a high-frequency beam cluster with higher quality on the premise of avoiding ignition and breakdown.
Drawings
FIG. 1 is a schematic diagram of a microwave gated hot cathode high voltage electron gun according to an embodiment of the present invention;
FIG. 2 shows the result of simulating 300KV DC electron gun beam current by EGUN according to one embodiment of the present invention;
FIG. 3 is a simplified electrical system of one embodiment of the present invention;
FIG. 4 is a schematic view of a connection structure between a cathode and a base of an electron gun according to an embodiment of the present invention;
FIG. 5a is a Smith chart illustrating impedance matching according to one embodiment of the invention;
FIG. 5b is a schematic cross-sectional view of a power supply device according to an embodiment of the present invention;
FIG. 5c is a schematic diagram of a connection between a power supply device and a cathode and a base of an electron gun according to an embodiment of the present invention;
FIG. 6 shows an experimental measurement of the S11 value of the impedance of the cathode associated with the device in accordance with one embodiment of the present invention;
FIG. 7 shows an experimental measurement of the S21 value of the impedance of the cathode associated with the device in accordance with one embodiment of the present invention;
reference numerals:
a, a cathode grid of an electron gun and B, a base; 100 a first outer layer structure, 110 a first outer layer front part, 120 a first outer layer rear part, 101 a grid electrode interface, 102 a microwave input interface, 103 a limit screw, 200 a first inner layer structure, 201 a cathode interface, 210 a first inner layer front part and 220 a first inner layer rear part; 300 second inner layer structure, 301 filament interface, 400 first insulating filling layer, 500 insulating medium, 600 insulating part, 701 coaxial inner diameter binding post, 702 coaxial outer shell binding post, 703 filament binding post, 801 first overlapping conductor, 802 second overlapping conductor.
Detailed Description
The objects, features and advantages of the present invention will be more clearly understood from the following detailed description of the preferred embodiments of the present invention taken in conjunction with the accompanying drawings. It should be understood that the embodiments shown in the drawings are not intended to limit the scope of the present invention, but are merely intended to illustrate the essential spirit of the technical solution of the present invention.
The microwave grid-controlled high-voltage electron gun is composed of a hot cathode, a grid, a focusing electrode and an anode, wherein the hot cathode, the grid and the focusing electrode are arranged on a high-voltage platform, and the anode is arranged at ground potential.
As shown in FIG. 1, the high-voltage platform is externally provided with a 325MHz microwave power source, a direct-current stabilized power supply and an isolation transformer according to one embodiment of the invention.
The filament power supply is loaded on the hot cathode to heat the filament to about 1200 ℃, electrons on the surface of the hot cathode obtain enough escaping energy, and the grid mesh is provided with a negative bias U b Inhibiting the emission of electrons from 325MHz solid state workA frequency source feeds microwaves into the gap between the cathode and the gate, the voltage amplitude U of the microwaves rf Greater than-U b . When the microwave electric field and the grid voltage electric field are in the same direction, the microwave electric field and the grid voltage electric field inhibit the emission of electrons at the same time, when the microwave electric field and the grid voltage electric field are in the reverse direction, the total electric field direction is enabled to point to the cathode at a specific phase, the electrons obtain enough energy to be transmitted out of the grid mesh and focused by the focusing electrode, and finally the grid mesh is led out by 300KV high voltage between the cathode and the anode to isolate the direct influence of the anode on the cathode, and simultaneously, the propagation of microwaves is cut off, the influence of the microwaves on subsequent beams is avoided, so that the two cavities form independent systems without mutual interference. That is, a cavity formed by a gap between the cathode and the grid on the left side of the grid contains an electrostatic field formed by a microwave electric field and a grid control voltage; the right side of the grid mesh is a cavity between the grid mesh and the anode, and the grid mesh is internally provided with an electrostatic field formed by a negative high-voltage power supply, so that the grid mesh not only stops the right transmission of left microwaves, but also shields the left transmission of the right high-voltage electric field.
The electron beam group with a time structure emitted from the grid mesh is focused by a focusing electrode and accelerated by negative high voltage of a cathode, and the generated high-repetition-frequency electron beam can meet the acceptance requirement of a subsequent electron accelerator.
The beam shape of the electron gun in one embodiment of the invention is shown in fig. 2, and the structure refers to an optimization scheme given by electric field simulation software Poisson, so that the ignition of the electron gun is avoided. In the embodiment, the cathode voltage of the electron gun is-300 KV, the anode is at the ground potential, the distance between the cathode and the anode is 12cm, the cathode adopts a hot cathode NJK2321A with a grid mesh produced by JRC company of Japan, the radius is 0.4cm, the radius of an anode hole is set to 0.5cm, and the beam intensity is set to 200mA. The structure generates a beam spot with the radius of 0.291cm and the normalized beam emittance of 1.015 mm-mrad by considering the space charge effect.
According to the structure display of a coaxial hot cathode NJK2321A, the cathode has three layers, namely a grid G, a cathode K and a filament power supply H, wherein the grid G is at the outermost layer and has the same potential as the shell of the NJK 2321A; the cathode K is arranged on the second layer and is insulated from the grid G; the filament power supply H is arranged in the core layer, one end of the filament power supply H keeps an independent potential and is insulated from the cathode K, the other end of the filament power supply H is in short circuit with the cathode K, and the other end of the filament power supply H is in the same potential as the cathode K. The invention aims to enable the voltages loaded by the grid G and the filament power supply H to be adjustable, namely, the grid control bias voltage and the filament voltage can be manually adjusted to modulate the electron gun.
The invention provides a power supply device for a grid-controlled electron gun, which is used for loading grid voltage, supplying power to a filament and transmitting microwaves to a position between negative grids in a near reflection-free mode.
The experimental design and electrical system connection diagram of the device according to one embodiment of the present invention is shown in fig. 3, wherein the cathode of the second layer of the hot cathode is connected to a-300 KV power supply, and the dc regulated power supply is applied to the gate and the filament and the microwave is fed to the 325MHz solid state power supply through the isolation transformer. Two ends of the filament power supply are respectively connected with H and K to form a passage, and the grid bias power supply is connected to the shell through one end and the cathode through the other end to complete the loading of the negative bias between G and K. Three circuit lines loaded on K can be connected outside NJK2321A and then connected with K, and the wiring process can be facilitated.
Because the coaxial cathode is of a three-layer nested structure, the structure can be closed when the microwave is fed into the space between the cathode and the grid by adopting a coaxial line, and a detailed and reasonable scheme is needed for connecting each direct-current voltage into the cathode when the microwave is transmitted.
In addition, the coaxial cathode is not a standard 50-ohm device, does not meet the matching condition, needs to design a specific transmission structure to complete impedance matching, and ensures that microwaves can be fed into the space between the cathode and the grid from a 325MHz microwave power source with high efficiency.
The NJK2221A coaxial hot cathode produced by JRC company in Japan is provided with a base suitable for engineering assembly, the cathode base of the NJK2321A coaxial hot cathode with a grid mesh is composed of a coaxial structure, an electronic grid is directly connected with the outer diameter of the coaxial base, a cathode is directly connected with the inner diameter of the coaxial base, the inner core of the inner diameter is connected with a filament power supply of the cathode, and the potentials of the three are independent. The connection structure of the cathode grid A and the base B of the electron gun cathode is schematically shown in FIG. 4 (filament is not shown).
According to the embodiment of the invention, the microwave is fed in by adopting a coaxial transmission structure, namely, the power supply device can be connected with the cathode of the NJK2221A coaxial hot cathode through the base of the NJK2221A coaxial hot cathode, and the coaxial transmission power supply device has the characteristics of convenience in use, simplicity in packaging, good stability, small transmission loss and the like when transmitting the microwave compared with other types of cables.
The invention first proposes a power supply device for a gated electron gun, as shown in fig. 5b, said power supply device 10 comprising:
a first outer layer structure 100 which is a rotary conductor and is configured to have a gate interface 101 at one end and a first power input interface at the other end, and a microwave input interface 102 which communicates a gap between the layer and the first inner layer structure is provided between the two ends;
a first inner layer structure 200, which is a rotary conductor, configured to have a cathode interface 201 at one end and a second power input interface at the other end;
a second inner layer structure 300 which is a rotary conductor and is configured to have a filament interface 301 at one end and a third power input interface at the other end;
the first outer layer structure 100, the first inner layer structure 200 and the second inner layer structure 300 are coaxially arranged, the second inner layer structure 300 is located at the innermost layer, the first inner layer structure 200 is arranged outside the second inner layer structure 300 at intervals, and the first outer layer structure 100 is arranged outside the first inner layer structure 200 at intervals.
When the microwave transmission impedance is matched, the microwave transmission inner diameter of the coaxial power supply device is D, the outer diameter is D, and the dielectric constant is epsilon r The impedance is:
from the formula, the direct parameters affecting the impedance of the coaxial structure are the inner and outer diameters of the conductor and the dielectric constant of the medium, and the impedance value can be changed by changing the parameters. With Z being 0 Representing the impedance value per unit length, changing the length of the coaxial structure can also change the impedance coefficient of the termination.
Evaluation data given by JRC of Japan shows that the transconductance is about 0.01S and the relationship between the transconductance and the inter-electrode resistance is
g＝μ/R 0
Where μ is the gain factor, R 0 is The resistance of the cathode portion is 1, the interelectrode impedance is about 100 Ω, the cathode area S =0.5 square meter, the cathode-grid spacing l =160 μm, C 0 For interelectrode capacitance, according to the formula:
C 0 ＝ε r S/l
the calculated interelectrode capacitance was 2.767pF.
The inductance parameter of the structure can be ignored, the capacitance is connected with the resistance in series, and the impedance parameter of the cathode can be calculated according to the known capacitance and resistance parameters and a formula
Z 1 ＝R 0 +jωL 0 -1/jωC 0
Wherein L is 0 Is an inductor, the structure can be ignored, and cathode impedance Z is calculated 1 ＝100-177j。
In the above embodiment, the electron gun has a coaxial base with a length of 27.7mm, an inner diameter of 8mm, an outer diameter of 18mm, and a corresponding impedance of 48.6 Ω, and is connected in series with the cathode, and the impedance of the port corresponding to the interface of the electron gun is 34.249-106.905j.
To obtain the maximum transmission efficiency, a conjugate matching method is required, and in an embodiment of the present invention, a coaxial power supply device with an impedance coefficient of 34.249+106.905j is manufactured, and according to the aforementioned connection manner of the coaxial base and the gate-controlled electron gun, the outer diameter of the microwave transmission structure of the coaxial power supply device manufactured in this embodiment is 24mm, which is the inner diameter of the left end of the first outer layer structure 100 shown in fig. 5 b.
For convenience of processing, the present embodiment adjusts the impedance per unit length of the coaxial power supply device structure by changing the inner diameter and the filling medium without changing the outer diameter.
In the embodiment of the invention, as shown in fig. 5a, the smith chart is used, so that the optimal impedance matching design can be obtained, and the length of the device is saved.
Smith chart (Smith chart) is a calculation chart plotting a circle family of equivalent normalized input impedance (or admittance) on a scattering plane of a reflection system, and is mainly used for impedance matching of a transmission line and solving by using a graphical method so as to avoid complicated operation. The basic principle is that the electrical impedance (impedance) of a transmission line changes with its length.
According to the smith chart design principle, the embodiment first matches the complex impedance to the real impedance (only including the resistor, not including the capacitive inductance), then matches the real impedance to 50 Ω (the center of the circle), and then performs the drawing.
According to one embodiment of the present invention, the length range of the first inner layer structure 200 between the position corresponding to the microwave input interface 102 and the cathode interface 201 is configured as two connected sections with different outer diameters, the section closer to the cathode interface 201 is a first section, the other section is a second section, the inner diameter and the length of the first section are designed according to the real impedance in the composite impedance of the microwave input to the cathode and the grid, and the second section is a 1/4 wavelength matching section which matches the impedance to a required value; the inner diameter of the first outer structure 100 is maintained uniform over the corresponding length.
According to the calculated impedance value and the design of the structure, the curves of the 1 to 6 ports can be drawn on a circular diagram. As shown in fig. 5a, the 1 port is the position where the cathode impedance is located, and is closer to the short-circuit point, the 27.7mm coaxial base structure from the 1 port to the 2 port corresponds to the cathode itself, so as to facilitate feeding of the microwave, the 2 port to the 5 port converts the composite impedance into real impedance without imaginary part, and the 5 port to the 6 port are 1/4 wavelength matching nodes, so as to match the impedance to 50 ohms.
For convenience to correspond to the circular diagram, embodiments of the present invention are labeled in fig. 5b from 2 ports to 6 ports corresponding to positions on the circular diagram.
In order to support the inner and outer conductors and improve transmission efficiency, the embodiment of the invention can be filled with a medium in the inner part, the medium is an insulating material, such as polytetrafluoroethylene, and other materials with similar functions can be adopted instead.
Further, according to an embodiment of the present invention, the 3-port to 4-port filling medium in fig. 5b can support and fix the position between the first outer layer structure and the first inner layer structure. That is, within the length range between the cathode interface 201 and the joint of the two sections, a first insulating filling layer 400 with a length less than or equal to the length range is disposed between the first outer layer structure 100 and the first inner layer structure 200, and preferably, the material of the first insulating filling layer 400 is teflon.
Preferably, the first inner layer structure and the first outer layer structure are respectively set to be structures with adjustable lengths on the first section.
According to one embodiment of the present invention, the first outer layer structure 100 comprises two front and rear portions with adjustable connecting positions, namely a first outer layer front portion 110 and a first outer layer rear portion 120, respectively, and the first inner layer structure 200 comprises two front and rear portions with adjustable connecting positions, namely a first inner layer front portion 210 and a first inner layer rear portion 220; preferably, the front-rear portion junction of the first outer layer structure 100 corresponds to the front-rear portion junction of the first inner layer structure 200; preferably, the front and rear portion of the first inner layer structure 200 is connected at the first section.
According to an embodiment of the present invention, a module capable of expansion and contraction is designed from 4 ports to 5 ports in fig. 5b, the length of the segment is variable, the segment can be limited and fixed by a limiting member such as a limiting screw, and the tuning range can be ± 15mm, so as to cope with assembly errors, temperature changes and impedance changes of the cathode during operation.
According to an embodiment of the present invention, insulating medium layers may be respectively disposed between the first outer layer structure 100 and the first inner layer structure 200 and the second inner layer structure 300, and preferably, the insulating medium layers are made of teflon.
According to an embodiment of the present invention, the 5-port to 6-port segment is also filled with the insulating medium 500, so that on one hand, the inner diameter radius of the coaxial structure can be reduced, the processing is convenient, and on the other hand, the supporting and fixing functions are achieved.
According to the design concept, the microwave transmission inner diameters of the sections from 2 ports to 6 ports are obtained according to the formula (1), so that curves of 1 to 6 end points in fig. 5a are drawn (wherein 1 port to 2 port are drawn according to the overlapping structure with the base). According to the plotted curve, the arc length of each curve between the ports of fig. 5a is obtained, and each arc length corresponds to the length of each transmission section of fig. 5b, that is, the length of each section from 2 ports to 6 ports of the first inner layer structure is obtained, so that the microwave transmission path between the first outer layer structure and the first inner layer structure shown in fig. 5b is obtained.
In accordance with one embodiment of the present invention, corresponding to ports 1-6 of FIG. 5a, one embodiment of the present invention is shown in FIG. 5 b: the 1 port is the position of the cathode impedance, the 1 to 2 ports are 27.7mm coaxial structures of the cathode base, the 2 port corresponding impedance is 34.249-106.905j, the inner diameters of three coaxial devices of the 2 to 5 ports are all 12mm, the composite impedance is converted into real impedance without imaginary parts, wherein the 2 to 3 ports are not filled with filling media, and the corresponding impedance is 41.6 omega; the 3-4 ports are filled with polytetrafluoroethylene to be fixed in position, and the corresponding impedance is 28.7 omega; the ports 4 to 5 are not filled with media, a telescopic module is designed, the position is fixed by a limit screw 103, the tuning range is +/-15 mm, so that the errors in assembly, the change of temperature and the change of impedance of a cathode in the working process can be met, although the outer diameter or the inner diameter of a connecting part is changed due to the adjustment of the position, the length of the connecting part is shorter than the total length, and the integral effect is not influenced; the impedance of the 5 ports is 2.9525 omega, the 5 to 6 ports are filled with polytetrafluoroethylene, the inner diameter is 17.9mm, the corresponding impedance is 12.2 omega, the length is 159.136mm, the impedance is matched with the function of a lambda/4 wavelength matching node, and the corresponding impedance coefficient of the 6 ports is 50.033 omega. And 10 ports can be arranged at the positions corresponding to the 6 ports to serve as microwave injection interfaces. An insulating medium can be filled between the microwave input interface and the first outer layer structure.
Compared with other types of cables, the coaxial transmission power supply device has the characteristics of convenience in use, simplicity in packaging, good stability, small transmission loss and the like when microwaves are transmitted.
The coaxial impedance matching structure not only completes the task of microwave transmission, but also needs to bear the direct current bias voltage required by a grid and a filament power supply.
According to one embodiment of the present invention, the first outer layer structure 100, the first inner layer structure 200 and the second inner layer structure 300 are isolated at the other end (right end in the figure) of the power input by an insulator 600 to form independent potentials, respectively.
The insulating member 600 may be an insulator with good stability, such as an insulating ceramic member, an insulating plastic member, or the like. The insulating member 600 is preferably a magnetic ring (insulating ceramic member).
According to one embodiment of the present invention, the second power input interface is a coaxial inner diameter post 701 connected to the other end of the first inner structure 200 by a first overlap conductor 801, and the first power input interface is a coaxial housing post 702 connected to the other end of the first outer structure 100 by a second overlap conductor 802.
The first overlapped conductor 801 and the second overlapped conductor 802 are both arranged between the first inner layer structure 200 and the first outer layer structure 100, are arranged at intervals along the length direction of the power supply device, and are respectively connected with the first inner layer structure 200 or the first outer layer structure 100 at different positions along the radial direction of the power supply device.
The space between the first and second overlapping conductors 801 and 802 may be filled with an insulating medium 500.
The third power input interface is a filament terminal 703.
Preferably, the gate interface of the first outer layer structure 100 and the cathode interface of the first inner layer structure 200 are both petal-shaped elastic structures.
The petal-shaped structure is that a plurality of axial spacing grooves (the length direction of the spacing grooves is parallel to the axial direction) are formed in the end (interface end) of the structure opening along the circumferential direction, so that the end is in a petal shape.
The connector of the coaxial power supply device adopts a petal-shaped connection structure, and the connection structure has certain elasticity and is convenient to install. Of course, other methods such as fixing with another bracket can also be adopted.
One embodiment of the present invention is as follows: as shown in fig. 5 b: the petal-shaped interface in front of the port 2 is inserted into the coaxial base of the cathode, the ports 2 to 6 are coaxial matching sections, the port 10 is a microwave injection interface, the interface can be a standard transmission line N-shaped female head structure, and the corresponding impedance of the section is 50 omega; 7. the potential between the ports 8 and 9 is independent and is separated by the insulator 600, the ports 7, 8 and 9 are respectively provided with a binding post, and the overlapped conductor structures arranged at the ports 7 and 9, such as the first overlapped conductor 801 and the second overlapped conductor 802, just seal the rear half part (the right part in the figure) of microwave transmission, so that the microwave cannot continuously propagate along the direction. While the coaxial inner diameter terminal 701 at port 7 is connected to the left end of the first inner layer 200 by a first overlapping conductor 801 and the coaxial housing terminal 702 at port 9 is connected to the left end of the first outer layer 100 by a second overlapping conductor 802. The filament terminals 703 at the 8-port are connected to the second inner layer structure 300.
The cathode and the grid of the electron gun are respectively connected with the inner conductor and the outer conductor of the coaxial power supply device, namely, the cathode and the grid are connected with the first inner layer structure and the first outer layer structure, the filament power supply of the electron gun is connected with the inner core of the inner conductor of the coaxial power supply device, namely, the second inner layer structure, and the adjacent positions between the first outer layer structure and the first inner layer structure and between the first inner layer structure and the second inner layer structure can be respectively isolated by polytetrafluoroethylene, so that the structural layers have independent potential difference. The coaxial structure has a potential difference between the inner radius and the outer radius, a binding post with 7 ports corresponds to the potential of a cathode, a binding post with 8 ports corresponds to the potential of a filament power supply, and a binding post with 9 ports corresponds to the potential of a grid.
Because there is a potential difference between the 7 port and the 9 port, the voltage will be conducted directly to the 10 port, and in order to prevent the direct current signal from feeding directly to the 325MHz solid state power source along the coaxial line, it can be isolated by connecting a full built-in direct current blocker to the 10 port.
According to an embodiment of the present invention, the conductor material of the power supply device is not limited, such as beryllium copper, brass, stainless steel, and the like, preferably beryllium copper, which has the characteristics of high hardness, high wear resistance, high elasticity, high conductivity, excellent casting performance, and the like, and has a high cost performance and a suitable manufacturing cost.
According to an embodiment of the present invention, the filled insulating medium may be a material with a stable dielectric coefficient and a solid state at room temperature, preferably polytetrafluoroethylene, and the material has the characteristics of reasonable friction coefficient, difficult deformation, good insulating property, insensitive dielectric coefficient to temperature change, etc.
According to one embodiment of the invention, the material of the terminal post is an insulating ring, preferably sintered ceramic with good insulating property and convenient processing.
During implementation, the front port of the power supply device needs to be inserted into a base of an electron gun to be fixed, the coaxial structure is connected with the electron gun, three binding posts at the rear end of the power supply device are respectively connected with different electric potentials, the upper end of the power supply device is grounded, and the middle end and the lower end of the power supply device are connected with different negative electric potentials according to experimental requirements. The lower end is connected with a full built-in direct current blocker at a port 10, and then can be connected with a microwave power source through a standard N-type 9mm transmission line. During tuning, the rear half part of the power supply device can directly move left and right, and then the front half part and the rear half part are fixed by limit screws.
The impedance matching structure of the embodiment is suitable for a 325MHz microwave grid-control electron gun, and the solid power source can be directly supplied with power by an isolation transformer.
Through experiments, the results shown in fig. 6 and 7 were obtained.
FIG. 6 is a graph of the results of experimental measurements of the S11 value of the device versus cathode impedance from 100MHz to 550MHz showing that the first peak is at 325MHz and that S11 reflects the reflection efficiency of the device, which is-31 dB, indicating that there is almost no power reflection of the microwaves at the input port.
Fig. 7 is a graph of the results of experimental measurements of the S21 value of the power supply device in conjunction with the cathode impedance from 100MHz to 550MHz in the above embodiment, showing that the first peak is at 325MHz, and S21 reflects the transmission efficiency of the device, which is-1.2 dB, indicating that the transmission efficiency is greater than 70% from the input port to the output port.
Experiments prove that the power supply device provided by the embodiment of the invention is respectively at the peak values of S11 and S21 at 325MHz, has the highest transmission efficiency at the frequency, and has an inhibiting effect on the excitation of microwaves at other frequencies, namely the power supply device provided by the embodiment of the invention is well matched with a microwave grid-controlled electron gun in the process of transmitting the microwaves at 325MHz, is not easy to excite the microwaves at adjacent frequencies, and has high transmission efficiency and excellent performance.
The power supply device is applied to a microwave grid-control electron gun, can realize that the cathode, the grid and the filament power supply are at different electric potentials, approximately transmits microwaves to a cathode load without reflection, and also has a certain tuning function.
The power supply device of the above embodiment is designed to match with a narrow band, however, the present invention is not limited to the above embodiment, and can be applied to a gated electron gun at other frequencies according to specific needs.
The invention also provides an electron gun system for grid control, which comprises a microwave grid control electron gun and the power supply device for the grid control electron gun, wherein the electric device is configured to load grid voltage to the electron gun, supply power to a filament and transmit microwaves between negative grids; preferably, the electron gun is connected to the power supply means by connecting a coaxial base.
FIG. 5c is a schematic diagram of the connection of the power supply device with the electron gun hot cathode and the base according to one embodiment of the present invention.
The invention also provides a method for supplying power and inputting microwaves to the grid-controlled electron gun by using the power supply device, which mainly comprises the following steps:
inputting microwaves to the space between the cathode and the grid of the electron gun through a microwave input interface and the gap between the first inner layer structure and the first outer layer structure;
loading a grid voltage on the electron gun through a first power input interface of the first outer layer structure;
and supplying power to the filament of the electron gun through the second power input interface of the first inner layer structure and through the third power input interface of the second inner layer structure.
Of course, the method may also include the various designs and other methods described above.
Compared with the direct current grid control electron gun, the microwave grid control electron gun can provide a beam group with high repetition frequency, does not need a bunch and a chopper to modulate a beam group time structure, greatly saves space and cost, can stably run for a long time, and has higher beam current intensity.
The power supply device has the advantages of small number of sections, small processing difficulty, compact structure and convenient operation and use.
The implementation mode of the adjustable connection position of the power supply device only needs partial movement during tuning, integrity is not damaged, and the structure is more stable.
The dielectric material selected by the invention has better sealing property, smaller friction coefficient, larger Young modulus, difficult deformation and convenient processing.
In a word, the invention provides a solution for the complex circuit connection mode of the electron gun, designs a dual-mode power supply device, meets the requirement of the electron gun of the type on power supply for direct current microwave, designs and optimizes an electron gun system, and can obtain a high-frequency beam cluster with higher quality on the premise of avoiding ignition and breakdown.
It should be noted that, in this document, the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the system or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention; relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising one of 8230; \8230;" 8230; "does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
Furthermore, in the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The foregoing embodiments are merely illustrative of the present invention, in which various components and devices of the embodiments may be varied, the embodiments may be combined or eliminated as desired, not all components may be necessarily shown in the drawings, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the application. Therefore, the present application is not limited to the embodiments described herein, and all equivalent changes and modifications based on the technical solutions of the present invention should not be excluded from the scope of the present invention.
Claims (20)
1. A power supply device for a gated electron gun, the power supply device comprising:
the first outer layer structure is a rotary conductor, one end of the first outer layer structure is provided with a grid interface, the other end of the first outer layer structure is connected with a first power input interface, and a microwave input interface communicated with a gap between the first outer layer structure and the first inner layer structure is arranged between the two ends of the first outer layer structure;
the first inner layer structure is a rotary conductor, and is configured to be provided with a cathode interface at one end and be connected with a second power input interface at the other end;
the second inner layer structure is a rotary conductor and is configured to be provided with a filament interface at one end and be connected with a third power input interface at the other end;
the first outer layer structure, the first inner layer structure and the second inner layer structure are coaxially arranged, the second inner layer structure is positioned at the innermost layer, the first inner layer structure is arranged outside the second inner layer structure at intervals, and the first outer layer structure is arranged outside the first inner layer structure at intervals;
the length range of the first inner layer structure between the position corresponding to the microwave input interface and the cathode interface is configured into two connected sections with different outer diameters, the section close to the cathode interface is a first section, the other section is a second section, the inner diameter and the length of the first section are designed according to real impedance in composite impedance of the microwave input to the cathode and the grid, and the second section is a 1/4 wavelength matching section which matches the impedance to a required value; the first outer structure has a uniform inner diameter over the length.
2. Supply device for a gated electron gun according to claim 1, characterized in that a first insulating filling layer with a length smaller than or equal to the length range is provided between the first outer layer structure and the first inner layer structure in the length range between the cathode interface and the junction of the two segments.
3. A supply device for a gated electron gun according to claim 2, wherein the first insulating fill layer is made of teflon.
4. The power supply device according to claim 1 or 2, wherein the first outer structure comprises a first outer front portion and a first outer rear portion, the connection positions of which are adjustable, and the first inner structure comprises a first inner front portion and a first inner rear portion, the connection positions of which are adjustable.
5. Power supply device for a gated electron gun according to claim 4, characterized in that the connection of the front and rear parts of the first outer layer structure corresponds to the connection of the front and rear parts of the first inner layer structure.
6. Power supply device for a gated electron gun according to claim 4, characterized in that the connection of the front and rear parts of the first inner layer structure is located on the first section.
7. A supply device for a gated electron gun according to claim 1 or 2, characterized in that insulating dielectric layers are provided between three layers of the first outer layer structure and the first inner layer structure and the second inner layer structure, respectively.
8. The power supply device according to claim 7, wherein the insulating dielectric layer is made of polytetrafluoroethylene.
9. Supply device for a gated electron gun according to claim 1 or 2, characterized in that the supply device further comprises a dc-blocker provided at the microwave input interface to prevent a voltage between the first outer structure and the first inner structure from being conducted to the microwave input interface.
10. A supply device for a gated electron gun according to claim 1 or 2, wherein the first outer layer structure, the first inner layer structure and the second inner layer structure are isolated at the other end of the power supply input by an insulator to form independent potentials, respectively.
11. The power supply device according to claim 1 or 2, wherein the second power input interface is a coaxial inner diameter terminal connected to the other end of the first inner layer structure through a first overlapping conductor, the first power input interface is a coaxial housing terminal connected to the other end of the first outer layer structure through a second overlapping conductor, the first overlapping conductor and the second overlapping conductor are both disposed between the first inner layer structure and the first outer layer structure, are spaced apart along the length direction of the power supply device, and are respectively connected to the first outer layer structure or the first inner layer structure at different positions along the radial direction of the power supply device; and the third power supply input interface is a filament binding post.
12. The power supply device according to claim 11, wherein the gate interface of the first outer layer structure and the cathode interface of the first inner layer structure are both petal-shaped elastic structures.
13. A system of electron guns for grid-controlled electron guns, characterized in that, the system comprises a microwave grid-controlled electron gun and the power supply device for grid-controlled electron gun of any of claims 1 to 12, the power supply device is configured to load grid voltage to the electron gun, supply filament, transmit microwave between the grids.
14. A system of electron guns for gating according to claim 13, wherein the electron guns are connected to the power supply means by connecting coaxial mounts.
15. A method of powering a gated electron gun with microwave input using a power supply device according to any of claims 1 to 12, the method comprising:
inputting microwaves to the space between the cathode and the grid of the electron gun through a microwave input interface and the gap between the first inner layer structure and the first outer layer structure;
loading a grid voltage on the electron gun through a first power input interface of the first outer layer structure and a second power input interface of the first inner layer structure;
and supplying power to the filament of the electron gun through the second power input interface of the first inner layer structure and through the third power input interface of the second inner layer structure.
16. The method of claim 15, further comprising configuring the power supply device to achieve impedance matching with a cathode of the electron gun.
17. The method of powering and microwave inputting of a gated electron gun according to claim 16,
impedance matching the power supply means by means of a smith chart such that the impedance of the microwave input interface to the power supply means at the cathode of the electron gun corresponds to a matching value.
18. The method of claim 17, wherein the step of providing power to the gated electron gun and the step of inputting microwaves,
the method further includes obtaining an impedance of the power supply device when using the smith chart according to:
wherein, Z 0 Representing the impedance value per unit length, D is the inner diameter of the microwave transmission of the power supply device, D is the outer diameter of the microwave transmission, epsilon r The impedance value of the power supply device is changed by changing the above parameters and the length of the power supply device for the dielectric constant.
19. A method of powering and microwave inputting to a gated electron gun according to any of the claims 15 to 18, further comprising:
the length range of the first inner layer structure between the position corresponding to the microwave input interface and the cathode interface is configured into two connected sections with different outer diameters, the section closer to the cathode interface is a first section, the other section is a second section, the inner diameter and the length of the first section are designed according to real impedance in composite impedance of the microwave input to the cathode and the grid, and the second section is a 1/4 wavelength matching section which matches the impedance to a required value; the first outer structure has a uniform inner diameter over the length.
20. Method for powering a gated electron gun and for inputting microwaves according to claim 19, wherein the first inner layer structure and the first outer layer structure, respectively, are each arranged to be adjustable at the first nodal position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011470298.4A CN112582241B (en) | 2020-12-14 | 2020-12-14 | Power supply device for grid-control electron gun, electron gun system and power supply method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011470298.4A CN112582241B (en) | 2020-12-14 | 2020-12-14 | Power supply device for grid-control electron gun, electron gun system and power supply method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112582241A CN112582241A (en) | 2021-03-30 |
| CN112582241B true CN112582241B (en) | 2023-03-14 |
Family
ID=75135271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011470298.4A Active CN112582241B (en) | 2020-12-14 | 2020-12-14 | Power supply device for grid-control electron gun, electron gun system and power supply method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112582241B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208308A (en) * | 2010-03-31 | 2011-10-05 | 中国科学院电子学研究所 | Method for frame mounting of non-intercepting gridded electron gun of klystron |
| CN202487521U (en) * | 2012-02-21 | 2012-10-10 | 中国科学院上海应用物理研究所 | Fast pulse transmission device for electron gun |
| CN103237407A (en) * | 2013-04-10 | 2013-08-07 | 中国科学院近代物理研究所 | High-voltage transformer type electronic accelerator |
| US9257253B1 (en) * | 2014-08-21 | 2016-02-09 | Altair Technologies, Inc. | Systems and methods utilizing a triode hollow cathode electron gun for linear particle accelerators |
| CN107612356A (en) * | 2017-10-13 | 2018-01-19 | 中国原子能科学研究院 | A kind of grided electron gun power supply |
| CN111326378A (en) * | 2018-12-13 | 2020-06-23 | 陕西利友百辉科技发展有限公司 | Multi-floating grid cathode structure, electron gun, electron accelerator and irradiation device |
-
2020
- 2020-12-14 CN CN202011470298.4A patent/CN112582241B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208308A (en) * | 2010-03-31 | 2011-10-05 | 中国科学院电子学研究所 | Method for frame mounting of non-intercepting gridded electron gun of klystron |
| CN202487521U (en) * | 2012-02-21 | 2012-10-10 | 中国科学院上海应用物理研究所 | Fast pulse transmission device for electron gun |
| CN103237407A (en) * | 2013-04-10 | 2013-08-07 | 中国科学院近代物理研究所 | High-voltage transformer type electronic accelerator |
| US9257253B1 (en) * | 2014-08-21 | 2016-02-09 | Altair Technologies, Inc. | Systems and methods utilizing a triode hollow cathode electron gun for linear particle accelerators |
| CN107612356A (en) * | 2017-10-13 | 2018-01-19 | 中国原子能科学研究院 | A kind of grided electron gun power supply |
| CN111326378A (en) * | 2018-12-13 | 2020-06-23 | 陕西利友百辉科技发展有限公司 | Multi-floating grid cathode structure, electron gun, electron accelerator and irradiation device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112582241A (en) | 2021-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105161390B (en) | New meta-materials high-power microwave source | |
| CN105810537B (en) | Using the X-band high impedance relativistic klystron amplifier of annular beam cold cathode | |
| JP2857583B2 (en) | High frequency vacuum tube with adjacent cathode and non-emissive grid | |
| CN106803473B (en) | A kind of 0.34THz travelling-wave tubes | |
| US8390200B2 (en) | Coaxial cavity gyrotron with two electron beams | |
| US3169206A (en) | High frequency tube method and apparatus | |
| CN105261541A (en) | High power radial line relativistic klystron amplifier | |
| CN112582241B (en) | Power supply device for grid-control electron gun, electron gun system and power supply method | |
| US3458755A (en) | Crossed-field discharge device and microwave circuits incorporating the same | |
| JPH11329264A (en) | Amplifying device | |
| Ding et al. | Research progress on X-band multibeam klystron | |
| Efremov et al. | A four-channel source of high-power pulses of ultrawideband radiation | |
| US5245625A (en) | High-frequency-excited laser for high output powers, particularly a CO.sub.2 | |
| Close et al. | Radiation measurements from an inverted relativistic magnetron | |
| Zhang et al. | Design of dual-band high-power backward wave oscillator using double staggered grating and pseudospark-sourced sheet beam | |
| EP1675150B1 (en) | Electron beam tube output arrangement | |
| CN206546809U (en) | A kind of 0.34THz travelling-wave tubes | |
| Lyles et al. | Design, Test and Implementation of New 201.25 MHz RF Power Amplifier for the LANSCE Linac | |
| Pchelnikov | Ring-double-bar slow wave structure for high power TWTs | |
| GB841791A (en) | Improvements in or relating to travelling-wave electron discharge devices | |
| CN104332373B (en) | A kind of cylinder that produces notes the cold cathode of INTENSE RELATIVISTIC ELECTRON BEAM more | |
| US4355286A (en) | Resonant circuit arrangement | |
| RU2782362C1 (en) | Method for forming quasi-continuous narrow-band radiation of decimeter wave-length range | |
| RU2084042C1 (en) | Reflection oscillator | |
| US3325740A (en) | High frequency oscillation generators |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |