CN112574517A - Semi-conductive material for cable accessory and preparation method thereof - Google Patents
Semi-conductive material for cable accessory and preparation method thereof Download PDFInfo
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- CN112574517A CN112574517A CN202011338626.5A CN202011338626A CN112574517A CN 112574517 A CN112574517 A CN 112574517A CN 202011338626 A CN202011338626 A CN 202011338626A CN 112574517 A CN112574517 A CN 112574517A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000004020 conductor Substances 0.000 title description 18
- 239000000463 material Substances 0.000 claims abstract description 140
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000012744 reinforcing agent Substances 0.000 claims abstract description 22
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 19
- 229920002943 EPDM rubber Polymers 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000011230 binding agent Substances 0.000 claims abstract description 13
- 238000004132 cross linking Methods 0.000 claims abstract description 11
- 239000004014 plasticizer Substances 0.000 claims abstract description 11
- 238000004073 vulcanization Methods 0.000 claims abstract description 11
- 239000011787 zinc oxide Substances 0.000 claims abstract description 11
- 230000003712 anti-aging effect Effects 0.000 claims abstract description 9
- 229920001971 elastomer Polymers 0.000 claims description 44
- 239000002994 raw material Substances 0.000 claims description 19
- 229920003169 water-soluble polymer Polymers 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims description 9
- 239000000178 monomer Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical group C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 7
- 229920000181 Ethylene propylene rubber Polymers 0.000 claims description 7
- 238000003723 Smelting Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 238000003801 milling Methods 0.000 claims description 6
- 238000004513 sizing Methods 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 5
- IANQTJSKSUMEQM-UHFFFAOYSA-N 1-benzofuran Chemical compound C1=CC=C2OC=CC2=C1 IANQTJSKSUMEQM-UHFFFAOYSA-N 0.000 claims description 4
- ZNRLMGFXSPUZNR-UHFFFAOYSA-N 2,2,4-trimethyl-1h-quinoline Chemical compound C1=CC=C2C(C)=CC(C)(C)NC2=C1 ZNRLMGFXSPUZNR-UHFFFAOYSA-N 0.000 claims description 4
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 4
- 239000005662 Paraffin oil Substances 0.000 claims description 4
- 229920002367 Polyisobutene Polymers 0.000 claims description 4
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 claims description 3
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 claims description 3
- BMFMTNROJASFBW-UHFFFAOYSA-N 2-(furan-2-ylmethylsulfinyl)acetic acid Chemical compound OC(=O)CS(=O)CC1=CC=CO1 BMFMTNROJASFBW-UHFFFAOYSA-N 0.000 claims description 2
- 239000003963 antioxidant agent Substances 0.000 claims description 2
- 230000003078 antioxidant effect Effects 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- VETPHHXZEJAYOB-UHFFFAOYSA-N 1-n,4-n-dinaphthalen-2-ylbenzene-1,4-diamine Chemical compound C1=CC=CC2=CC(NC=3C=CC(NC=4C=C5C=CC=CC5=CC=4)=CC=3)=CC=C21 VETPHHXZEJAYOB-UHFFFAOYSA-N 0.000 claims 1
- 239000011810 insulating material Substances 0.000 abstract description 26
- 238000000465 moulding Methods 0.000 abstract description 16
- 238000013329 compounding Methods 0.000 abstract description 5
- 238000005498 polishing Methods 0.000 abstract description 3
- 239000002131 composite material Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical group C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 2
- 241001062472 Stokellia anisodon Species 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- IPJGAEWUPXWFPL-UHFFFAOYSA-N 1-[3-(2,5-dioxopyrrol-1-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC(N2C(C=CC2=O)=O)=C1 IPJGAEWUPXWFPL-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010382 chemical cross-linking Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- -1 β -naphthyl Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L23/16—Elastomeric ethene-propene or ethene-propene-diene copolymers, e.g. EPR and EPDM rubbers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2296—Oxides; Hydroxides of metals of zinc
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Conductive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention provides a semiconductive material for cable accessories and a preparation method thereof. The semiconductive material for the cable accessory comprises 100 parts of ethylene propylene diene monomer, 3-5 parts of zinc oxide, 1-3 parts of an anti-aging agent, 15-25 parts of a plasticizer, 5-15 parts of a binder, 3-8 parts of a vulcanizing agent, 30-50 parts of a reinforcing agent, 5-10 parts of graphene and 1-3 parts of a crosslinking accelerator. The semiconductive material for the cable accessory can obtain higher bonding strength without polishing in the process of compounding, bonding and molding with an insulating material, widens the vulcanization time range of the semiconductive material, and improves the processing performance of the material.
Description
Technical Field
The invention belongs to the field of rubber, and particularly relates to a semiconductive material for a cable accessory and a preparation method thereof.
Background
The high-voltage resistant material is an important material of a power supply system, the common high-voltage resistant material is formed by compounding and bonding a formed semi-conductive material and a formed insulating material, and the semi-conductive material is firstly polished before compounding and bonding so as to improve the surface roughness of the semi-conductive material and further improve the bonding strength between the semi-conductive material and the insulating material.
The raw materials of the semiconductive material influence the molding and compounding process parameters of the semiconductive material. In the existing raw material proportion, in the process of vulcanizing and forming the semiconductive material, the vulcanizing time needs to be controlled within a narrow time range of 120 +/-2 min, if the vulcanizing time is too short, black marks exist at the joint of the semiconductive material and the insulating material, and if the vulcanizing time is too long, the caking property of the semiconductive material and the insulating material can be reduced. In addition, the existing raw material proportion requires that the semi-conductive material must be polished before the semi-conductive material and the insulating material are compounded, so that the manufacturing cost of the high-voltage resistant material is increased; meanwhile, the polishing area and the cleaning degree of the polished surface of the semi-conductive material are very high in the polishing process, and if the requirements are not met, the bad phenomena of black mark, falling off of the insulating material and peeling can occur. Therefore, it is necessary to develop a new high voltage semiconducting material to avoid the grinding process of the semiconducting material and to widen the range of the vulcanization time of the semiconducting material.
Disclosure of Invention
The present invention is directed to solving at least one of the above problems in the prior art. Therefore, the invention provides a semiconductive material for cable accessories.
The invention also provides a preparation method of the semiconductive material for the cable accessory.
The semiconductive material for the cable accessory comprises the following raw materials in parts by mass:
ethylene propylene diene monomer: 100 parts of (a) a water-soluble polymer,
zinc oxide: 3 to 5 parts of (A) a water-soluble polymer,
an anti-aging agent: 1 to 3 parts of (A) a water-soluble polymer,
plasticizer: 15 to 25 parts of (a) a water-soluble polymer,
adhesive: 5 to 15 parts of (A) a water-soluble polymer,
reinforcing agent: 30 to 50 parts of (a) a water-soluble polymer,
graphene: 5 to 10 parts by weight of a surfactant,
vulcanizing agent: 3 to 8 parts of (A) a water-soluble polymer,
crosslinking accelerator: 1-3 parts.
According to one embodiment of the invention, in the ethylene propylene diene monomer, a third monomer is an ENB type monomer, and the ENB type monomer accounts for 3.8-4.3% of the total mass of the ethylene propylene diene monomer.
The reason why the mass percent of the ENB type monomer is 3.8-4.3% is as follows: the smaller the mass content of the monomer, the better the stability and the ageing resistance of the rubber, and the longer the service life.
According to a preferred embodiment of the invention, the zinc oxide is nano zinc oxide, the purity is more than or equal to 99.5%, and the synthesis method is an indirect method.
According to one embodiment of the present invention, the antioxidant is at least one of 2,2, 4-trimethyl-1, 2-dihydroquinoline polymer (RD), 2-Mercaptobenzimidazole (MB), N' -di (β -naphthyl) p-phenylenediamine (DNP).
According to an embodiment of the present invention, the plasticizer is at least one of white paraffin oil and paraffin oil.
According to one embodiment of the invention, the binder is at least one of coumarone resin RX-80, phenolic resin SP1077, polyisobutylene, liquid ethylene propylene rubber, and liquid butadiene.
The liquid ethylene propylene rubber has high viscosity, and can improve the bonding strength between the semiconductive material and the insulating material.
The liquid ethylene propylene rubber is saturated rubber, can be slowly vulcanized only by peroxide and is difficult to be completely vulcanized in the vulcanization process of the semi-conductive material; in the process of compounding and bonding with the insulating material, peroxide in the insulating material can continue to vulcanize liquid ethylene propylene rubber, and chemical crosslinking is formed between the semi-conductive material and the insulating material, so that the bonding strength between the semi-conductive material and the insulating material is improved.
According to one embodiment of the invention, the sulfurizing agent is dicumyl peroxide (DCP).
According to an embodiment of the present invention, the reinforcing agent is at least one of conductive carbon black and superconducting carbon black.
According to an embodiment of the present invention, the conductive carbon black has a resistivity of 1.2 to 1.8 Ω · m, and the superconducting carbon black has a resistivity of 0.8 to 1.0 Ω · m.
According to an embodiment of the present invention, the graphene is at least one of single-layer graphene, double-layer graphene, few-layer graphene, and multi-layer graphene.
The number of the few-layer graphene layers is 2-5; the number of the layers of the multilayer graphene is more than 5.
And part of graphene is added to replace conductive carbon black in the reinforcing agent, so that the processing performance of the material can be improved under the condition of ensuring the performance of the material.
According to one embodiment of the invention, the crosslinking accelerator is at least one of triallyl isocyanurate (TAIC), N' -m-phenylene bismaleimide (HVA-2), zinc methacrylate, sulphur.
In the processing process, the sulfur can form elemental sulfur, and the elemental sulfur can be further crosslinked with ethylene propylene diene monomer rubber in the insulating material, so that the bonding strength is improved.
A preparation method of a semiconductive material for cable accessories comprises the following steps:
s1, banburying ethylene propylene diene monomer to obtain a rubber material 1;
s2, adding all zinc oxide, all anti-aging agents and part of binders into the rubber material 1, and mixing and banburying to obtain a rubber material 2;
s3, adding part of reinforcing agent and all of plasticizer into the rubber material 2, performing closed smelting, then adding the rest of reinforcing agent, all of graphene and the rest of binder, and continuing closed smelting to obtain rubber material 3;
s4, open milling the rubber material 3, cooling and standing to obtain a rubber material 4;
s5, after the sizing material 4 is subjected to thin passing for 2-4 times, adding a vulcanizing agent and a crosslinking accelerator, continuing to perform thin passing for 8-12 times, and performing vulcanization and flaking to obtain the semiconductive material for the cable accessory.
According to an embodiment of the present invention, in step S1, the banburying is performed for 5-8 min.
According to an embodiment of the present invention, in step S2, the mixing and banburying are performed for 2 to 4 min.
According to one embodiment of the invention, the mass ratio of the partial binder in the step S2 to the residual binder in the step S3 is 1:1 to 1: 1.5.
According to an embodiment of the present invention, in step S3, a mass ratio of the partial reinforcing agent to the remaining reinforcing agent is 1:1 to 1: 1.5.
According to an embodiment of the invention, in the step S3, the time for the closed smelting is 3-5 min.
According to one embodiment of the present invention, steps S1-S3 are performed in a pressurized internal mixer.
According to an embodiment of the invention, in step S4, the open mill is performed at 160-180 ℃ for 8-10 min.
According to an embodiment of the present invention, in step S4, the cooling is performed at a temperature of 21-25 ℃.
According to an embodiment of the present invention, in step S4, the standing time is 16-24 hours.
According to an embodiment of the invention, in step S5, the vulcanization tablet is prepared at 160-170 ℃, for 25-30 min and under 10-14 MPa.
According to one embodiment of the present invention, steps S4 and S5 are performed in an open mill.
If the semiconductive material and the insulating material are to be subjected to composite bonding molding, after step S5, the following operations are performed:
D1. heating the semi-conductive material, injecting the semi-conductive material into a mold, and molding to obtain a material 1;
D2. vulcanizing the material 1 to obtain a material 2;
D3. and (3) carrying out composite bonding molding on the material 2 and an insulating material to obtain the composite material.
According to an embodiment of the present invention, in the step D1, the heating is performed at a temperature of 60 to 90 ℃.
According to an embodiment of the present invention, in the step D1, the forming time is 2-5 min.
According to an embodiment of the present invention, in the step D2, the temperature for vulcanization is 145-153 ℃ for 110-130 min.
According to an embodiment of the present invention, in step D3, the composite bond is formed for 390 min.
Compared with the prior art, the invention has at least the following beneficial effects:
(1) by optimizing the raw material composition and process parameters of the semiconductive material, the vulcanization time of the semiconductive material synthesized by the method is widened to 110-130 min, and the grinding process of the semiconductive material is omitted.
(2) The semiconductive material provided by the invention still has strong bonding strength with an insulating material even if a grinding process is not carried out, wherein the tear strength is more than or equal to 42.1N/mm, and the bonding strength is more than or equal to 8.2 Mpa.
(3) The graphene is used for replacing conductive carbon black in partial reinforcing agent, so that the processing performance of the material can be improved under the condition of ensuring the performance of the material.
Detailed Description
The following are specific examples of the present invention, and the technical solutions of the present invention will be further described with reference to the examples, but the present invention is not limited to the examples.
In each example, the composition of the raw material of the semiconductive material for a cable accessory is shown in table 1 in parts by mass.
Table 1 raw material composition of semiconductive material for cable accessories.
Wherein "-" means not added.
Example 1
In this embodiment, a semiconductive material for a cable accessory is prepared, and a raw material formula is shown in table 1, and the specific steps are as follows:
s1, banburying ethylene propylene diene monomer for 6min to obtain a rubber material 1;
s2, adding zinc oxide, an anti-aging agent, an RX-80 binder resin and an SP1077 resin into the rubber material 1, and mixing and banburying for 2min to obtain a rubber material 2;
s3, firstly, adding 1/2 heavy reinforcing agent and all plasticizers into the rubber material 2, sealing and smelting for 4min, then adding the rest reinforcing agent, all graphene and adhesive polyisobutylene, and continuing to seal and smelt for 5min to obtain rubber material 3;
s4, open milling the sizing material 3 at 160 ℃ for 8min, cooling to 25 ℃, and standing for 21h to obtain a sizing material 4;
s5, after the rubber material 4 is subjected to thin passing for 2 times, adding a vulcanizing agent and a crosslinking accelerator, continuing to perform thin passing for 10 times, vulcanizing for 25min under the conditions of 160 ℃ and 14MPa, and preparing a sheet to obtain the semi-conductive material for the cable accessory.
Example 2
In this embodiment, a semiconductive material for a cable accessory is prepared, and a raw material formula is shown in table 1, and the specific steps are as follows:
s1, banburying ethylene propylene diene monomer rubber for 8min to obtain a rubber material 1;
s2, adding zinc oxide, an anti-aging agent, an RX-80 binder resin and an SP1077 resin into the rubber material 1, and mixing and banburying for 3min to obtain a rubber material 2;
s3, firstly, adding 1/2 heavy reinforcing agent and all plasticizers into the rubber material 2, hermetically melting for 3min, then adding the rest reinforcing agent, all graphene and adhesive liquid ethylene propylene rubber, and continuing to hermetically melt for 4min to obtain rubber material 3;
s4, open milling the sizing material 3 at 165 ℃ for 9min, cooling to 25 ℃, and standing for 24h to obtain a sizing material 4;
s5, after the rubber material 4 is subjected to thin passing for 2 times, adding a vulcanizing agent and a crosslinking accelerator, continuing to perform thin passing for 10 times, vulcanizing for 30min under the conditions of 165 ℃ and 12MPa, and preparing a sheet to obtain the semi-conductive material for the cable accessory.
Example 3
In this embodiment, a semiconductive material for a cable accessory is prepared, and a raw material formula is shown in table 1, and the specific steps are as follows:
s1, banburying ethylene propylene diene monomer for 5min to obtain a rubber material 1;
s2, adding zinc oxide, an anti-aging agent and a binder RX-80 resin into the rubber material 1, and mixing and banburying for 4min to obtain rubber material 2;
s3, firstly, adding 1/2 heavy reinforcing agent and all plasticizers into the rubber material 2, sealing and smelting for 5min, then adding the rest reinforcing agent, all graphene and adhesive polyisobutylene, and continuing to seal and smelt for 4min to obtain rubber material 3;
s4, open milling the rubber material 3 at the temperature of 170 ℃ for 9min, cooling to 25 ℃, and standing for 22h to obtain rubber material 4;
s5, after the rubber material 4 is subjected to thin passing for 2 times, adding a vulcanizing agent and a crosslinking accelerator, continuing to carry out thin passing for 10 times, vulcanizing for 28min under the conditions of 170 ℃ and 13MPa, and preparing a sheet to obtain the semi-conductive material for the cable accessory.
Example 4
In this embodiment, a semiconductive material for a cable accessory is prepared, and a raw material formula is shown in table 1, and the specific steps are as follows:
s1, banburying ethylene propylene diene monomer rubber for 8min to obtain a rubber material 1;
s2, adding zinc oxide, an anti-aging agent and a binder RX-80 resin into the rubber material 1, and mixing and banburying for 3min to obtain rubber material 2;
s3, firstly, adding 1/2 heavy reinforcing agent and all plasticizers into the rubber material 2, hermetically melting for 3min, then adding the rest reinforcing agent, all graphene and adhesive liquid ethylene propylene rubber, and continuing to hermetically melt for 4min to obtain rubber material 3;
s4, open milling the rubber material 3 at 175 ℃ for 10min, cooling to 25 ℃, and standing for 18h to obtain rubber material 4;
s5, after the rubber material 4 is subjected to thin passing for 2 times, adding a vulcanizing agent and a crosslinking accelerator, continuing to perform thin passing for 10 times, vulcanizing for 24min under the conditions of 175 ℃ and 14MPa, and preparing a sheet to obtain the semi-conductive material for the cable accessory.
Comparative example 1
This comparative example prepared a semiconductive material for a cable accessory, the difference from example 1 being:
the raw materials were different, and the specific raw material composition is shown in table 1.
Application example 1
The embodiment takes the semiconductive material for the cable accessories obtained in the embodiment 1 as a raw material, and the semiconductive material and the insulating material are compounded, bonded and molded, and the specific implementation steps are as follows:
D1. heating the semiconductive material to 65 ℃, injecting the semiconductive material into a mold, and molding for 3min to obtain a material 1;
D2. vulcanizing the material 1 at 151 ℃ for 120 +/-2.5 min to obtain a material 2;
D3. and (3) carrying out composite bonding molding on the material 2 and the insulating material in a mold for 390min to obtain the composite material.
Application example 2
In the embodiment, the semiconductive material for the cable accessory obtained in the embodiment 2 is used as a raw material, and is compounded, bonded and molded with an insulating material, and the specific implementation steps are as follows:
D1. heating the semiconductive material to 60 ℃, injecting the semiconductive material into a mold, and molding for 4min to obtain a material 1;
D2. vulcanizing the material 1 at 153 ℃ for 120 +/-3 min to obtain a material 2;
D3. and (3) carrying out composite bonding molding on the material 2 and the insulating material in a mold for 390min to obtain the composite material.
Application example 3
In the embodiment, the semiconductive material for the cable accessory obtained in the embodiment 3 is used as a raw material, and is compounded, bonded and molded with an insulating material, and the specific implementation steps are as follows:
D1. heating the semiconductive material to 70 ℃, injecting the semiconductive material into a mold, and molding for 5min to obtain a material 1;
D2. vulcanizing the material 1 at 148 ℃ for 120 +/-4 min to obtain a material 2;
D3. and (3) carrying out composite bonding molding on the material 2 and the insulating material in a mold for 390min to obtain the composite material.
Application example 4
In the embodiment, the semiconductive material for the cable accessory obtained in the embodiment 4 is used as a raw material, and is compounded, bonded and molded with an insulating material, and the specific implementation steps are as follows:
D1. heating the semiconductive material to 75 ℃, injecting the semiconductive material into a mold, and molding for 2min to obtain a material 1;
D2. vulcanizing the material 1 at 153 ℃ for 120 +/-8 min to obtain a material 2;
D3. and (3) carrying out composite bonding molding on the material 2 and the insulating material in a mold for 390min to obtain the composite material.
Application example 5
In the embodiment, the semiconductive material for the cable accessory obtained in the comparative example 1 is used as a raw material, and is compounded, bonded and molded with the insulating material, and the specific implementation steps are as follows:
D1. heating the semiconductive material to 65 ℃, injecting the semiconductive material into a mold, and molding for 3min to obtain a material 1;
D2. vulcanizing the material 1 at 151 ℃ for 120 +/-2 min to obtain a material 2;
D3. and (3) after polishing the material 2, carrying out composite bonding molding on the material and the insulating material in a mold for 390min to obtain the composite material.
Test example
The test example detects the mechanical property, the electrical property, the aging property, the physical and chemical properties and the molding property of the composite material obtained in the application examples 1-5, and the specific test method and the test result are as follows.
The results of the performance tests are shown in table 2.
TABLE 2 composite material test results
As can be seen from the data shown in Table 2: (1) the prepared semiconductive material for the cable accessory has the bonding strength of more than or equal to 8.2MPa under the condition of no grinding, and is obviously improved compared with the bonding strength of 7.8MPa after grinding; (2) meanwhile, after the adjustment process is carried out, the vulcanization process time range of the semiconductive material for the cable accessory is wider and widened to 112-128 min, and is obviously widened compared with the time range of 118-122 min of the prior vulcanization process; (3) if the graphene is not added, the Mooney viscosity (1 +4min at 90 ℃) of the semiconductive material for the cable accessory is 78.6, the plasticity is low, and the processability is poor; the addition of the graphene reduces the dosage of the reinforcing agent and improves the processing performance of the semiconductive material for the cable accessory.
The present invention has been described in detail with reference to the embodiments, but the present invention is not limited to the embodiments described above, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Claims (10)
1. The semiconductive material for the cable accessory is characterized by comprising the following preparation raw materials in parts by mass:
ethylene propylene diene monomer: 100 parts of (a) a water-soluble polymer,
zinc oxide: 3 to 5 parts of (A) a water-soluble polymer,
an anti-aging agent: 1 to 3 parts of (A) a water-soluble polymer,
plasticizer: 15 to 25 parts of (a) a water-soluble polymer,
adhesive: 5 to 15 parts of (A) a water-soluble polymer,
reinforcing agent: 30 to 50 parts of (a) a water-soluble polymer,
graphene: 5 to 10 parts by weight of a surfactant,
vulcanizing agent: 3 to 8 parts of (A) a water-soluble polymer,
crosslinking accelerator: 1-3 parts.
2. The semiconductive material for cable accessories according to claim 1, wherein a third monomer in the ethylene propylene diene monomer is an ENB type monomer, and the ENB type monomer accounts for 3.8-4.3% of the total mass of the ethylene propylene diene monomer.
3. The semiconductive material for a cable accessory according to claim 1, wherein the antioxidant is at least one of 2,2, 4-trimethyl-1, 2-dihydroquinoline polymer, 2-mercaptobenzimidazole, and N, N' -di (β -naphthyl) p-phenylenediamine.
4. The semiconductive material for a cable accessory according to claim 1, wherein the plasticizer is at least one of white paraffin oil and paraffin oil.
5. The semiconductive material for a cable accessory according to claim 1, wherein the binder is at least one of coumarone resin RX-80, phenol resin SP1077, polyisobutylene, liquid ethylene propylene rubber, and liquid butadiene.
6. The semiconductive material for cable accessories according to claim 1, wherein the reinforcing agent is at least one of conductive carbon black and superconducting carbon black.
7. The semiconductive material for a cable accessory according to claim 1, wherein the crosslinking accelerator is at least one of triallyl isocyanurate, N' -m-phenylene bismaleimide, zinc methacrylate, and sulfur.
8. The semiconductive material for a cable accessory according to claim 1, wherein the graphene is at least one of single-layer graphene, double-layer graphene, few-layer graphene, and multi-layer graphene.
9. A method for preparing the semiconductive material for cable accessories according to any one of claims 1 to 8, comprising the steps of:
s1, banburying ethylene propylene diene monomer to obtain a rubber material 1;
s2, adding all zinc oxide, all anti-aging agents and part of binders into the rubber material 1, and mixing and banburying to obtain a rubber material 2;
s3, adding part of reinforcing agent and all of plasticizer into the rubber material 2, performing closed smelting, then adding the rest of reinforcing agent, all of graphene and the rest of binder, and continuing closed smelting to obtain rubber material 3;
s4, open milling the rubber material 3, cooling and standing to obtain a rubber material 4;
s5, after the sizing material 4 is subjected to thin passing for 2-4 times, adding a vulcanizing agent and a crosslinking accelerator, continuing to perform thin passing for 8-12 times, and performing vulcanization and flaking to obtain the semiconductive material for the cable accessory.
10. The method according to claim 9, wherein in step S5, the vulcanization is carried out at 160-170 ℃ for 25-30 min under 10-14 MPa.
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| CN113372657A (en) * | 2021-06-21 | 2021-09-10 | 长缆电工科技股份有限公司 | Semiconductive rubber and preparation method and application thereof |
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