CN112564702B - Control device for sapphire frequency source - Google Patents
Control device for sapphire frequency source Download PDFInfo
- Publication number
- CN112564702B CN112564702B CN202011539771.XA CN202011539771A CN112564702B CN 112564702 B CN112564702 B CN 112564702B CN 202011539771 A CN202011539771 A CN 202011539771A CN 112564702 B CN112564702 B CN 112564702B
- Authority
- CN
- China
- Prior art keywords
- module
- electrically connected
- microwave
- directional
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 33
- 239000010980 sapphire Substances 0.000 title claims abstract description 33
- 230000008878 coupling Effects 0.000 claims description 84
- 238000010168 coupling process Methods 0.000 claims description 84
- 238000005859 coupling reaction Methods 0.000 claims description 84
- 230000000087 stabilizing effect Effects 0.000 claims description 19
- 230000006641 stabilisation Effects 0.000 claims description 13
- 238000011105 stabilization Methods 0.000 claims description 13
- 230000010355 oscillation Effects 0.000 abstract description 33
- 230000008859 change Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 16
- 239000001307 helium Substances 0.000 description 10
- 229910052734 helium Inorganic materials 0.000 description 10
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
Landscapes
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
The invention discloses a control device for a sapphire frequency source. The control device is based on a sapphire microwave cavity working in a whispering gallery mode, two high-Q-value E-mode and H-mode oscillation signals are separated through an electrical means, the H-mode oscillation signals serve as main oscillation signals, phase and amplitude change information is extracted from the E-mode oscillation signals and serves as feedback control signals, the main oscillation signals are stabilized, extra modulation signals are not needed, and therefore microwave signals with extremely low stray, high frequency stability and low phase noise are obtained. Compared with circuit devices used in low-temperature sapphire frequency sources at home and abroad, the low-stray-power-factor-free low-noise frequency source circuit has the advantages of high frequency stability, low phase noise and low stray.
Description
Technical Field
The invention relates to the technical field of electronic equipment, in particular to a control device for a sapphire frequency source.
Background
The microwave frequency source with low phase noise and high stability is widely applied to the fields of radar, communication, aerospace, metering, basic physical research and the like. At present, the traditional methods for obtaining microwave sources mainly include: firstly, the frequency is obtained by a standard crystal oscillator (5MHz or 10MHz) frequency doubling mode. And secondly, the resonant frequency of a dielectric oscillator (DRO) is designed to be matched with a peripheral circuit. Compared with the two traditional modes, the low-temperature sapphire microwave frequency source has extremely low phase noise (less than-160 dBc/Hz @10kHz in an X wave band) and excellent short-term stability (less than 1E-15@1s), and the index of the low-temperature sapphire microwave frequency source is far beyond the index of the traditional microwave source. The main principle of the work is as follows: forming high-Q microwave by using the low loss tangent value of sapphire at low temperature, and oscillating the frequency selected by the high-Q microwave cavity by adopting a positive excitation mode; the phase control and amplitude control of the microwave frequency are carried out in the peripheral circuit, so that the whole machine forms stable microwave signal output. Chirstophe et al, using low temperature Sapphire, obtained 5E-16@1s Stability, an excellent indicator of-100 dBc/Hz @1Hz, see the literature, "Characterization of the Industrial Short-Term Frequency Stability of Cryogenetic Sapphire said 1-016 levels, IEEE TRANSACTIONS ON ULTRASONIC, FERROECLECTRICS, AND FREQUENCY CONTROL, VOL.63, NO.6, JUNE 2016". John et al obtained indices of 1E-15 τ -1/2(1s < τ < 10s) AND 1Hz phase noise-97.5 dBc/Hz using low temperature sapphire, AND the specific protocol is described in the literature "Ultra-low vibration pulse-tube crystallized clinical specimen with 10-16fractional frequency stability, IEEE TRANS. ON MICROWAVE THEORY AND TECHNIQUES, VOL.10, NO.1, DECEMBER 2010". A low-temperature sapphire microwave frequency source with the output frequency of 9.2GHz and the phase noise of-95 dBc/Hz @1Hz is developed in China. However, the low-temperature sapphire microwave frequency sources in various countries of the world currently have a common problem that the spurious with the offset frequency of 50 kHz-1 kHz is high in terms of single-sideband phase noise spectral density. This is caused by the circuit implementation principle of the frequency source and cannot be avoided. Specifically, after a high-Q whispering gallery mode (E mode or H mode) is selected by the existing frequency source, the phase and amplitude of the mode signal are stabilized by using a peripheral circuit, and in the process, a modulation signal with a frequency in the range of 50kHz to 90kHz is introduced, and the signal is introduced into the phase noise spectral density of the output signal, so that the spurious frequency of the output signal is very high at the offset frequency of 50kHz to 1 kHz.
Therefore, it is a technical problem to be solved in the art to provide a control device for solving the problem of high stray of sapphire frequency source.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a control device for a sapphire frequency source.
In order to achieve the purpose, the invention provides the following scheme:
a control device for a sapphire frequency source, comprising: the device comprises a vibration generating module, an auxiliary vibration module, a first directional coupling module, a phase stabilizing module, a second directional coupling module, an amplitude stabilizing module and a combining module;
the vibration generating module comprises a first coupling unit and a second coupling unit; the first coupling unit is arranged in a microwave cavity of the sapphire frequency source; the second coupling unit is arranged on the wall of the microwave cavity; the first coupling unit comprises a first coupler; the first coupler is electrically connected with the combining module; the combiner module and the second coupling unit are electrically connected with the auxiliary vibration door module; the auxiliary vibration module and the second directional coupling module are electrically connected with the first directional coupling module; the second directional coupling module is electrically connected with the amplitude stabilizing module; the phase stabilization module is electrically connected with the first directional coupling module and the second directional coupling module respectively.
Preferably, the vibration generating module further includes: the device comprises a first microwave isolator, a first band-pass filter, a first microwave amplifier, a first directional coupler, a voltage-controlled attenuator and a voltage-controlled phase shifter; the first coupling unit further comprises a second coupler;
the second coupler, the first microwave isolator, the first band-pass filter, the first microwave amplifier, the first directional coupler, the voltage-controlled attenuator and the voltage-controlled phase shifter are electrically connected in sequence; the voltage-controlled phase shifter is electrically connected with the combining module and the phase stabilizing module respectively.
Preferably, the secondary vibration module includes: the second microwave isolator, the second band-pass filter, the second microwave amplifier and the phase shifter;
the second microwave isolator is electrically connected with the second coupling unit; the second band-pass filter is electrically connected with the second microwave isolator and the first directional coupling module respectively; the first directional coupling module is electrically connected with the second directional coupling module and the second microwave amplifier respectively; the second microwave amplifier is electrically connected with the phase shifter; the phase shifter is electrically connected with the combining module.
Preferably, the first directional coupling module includes: a second directional coupler;
the second directional coupler is electrically connected with the second directional coupling module and the second microwave amplifier.
Preferably, the phase stabilization module includes: a first detector and a first phase-locked amplifier;
the first detector is electrically connected with the second directional coupling module and the first phase-locked amplifier respectively; the first phase-locked amplifier is electrically connected with the voltage-controlled phase shifter.
Preferably, the second directional coupling module includes: a third directional coupler;
the third directional coupler is electrically connected with the first directional coupling module, the first detector and the amplitude stabilizing module respectively.
Preferably, the amplitude stabilization module includes: a second detector and a second lock-in amplifier;
the second detector is electrically connected with the second directional coupling module and the second lock-in amplifier respectively; the second lock-in amplifier is electrically connected with the voltage-controlled attenuator.
Preferably, the combining module includes a combiner; the combiner is electrically connected with the main vibration module and the auxiliary vibration module respectively.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a control device for a sapphire frequency source, which comprises: the device comprises a vibration generating module, an auxiliary vibration module, a first directional coupling module, a phase stabilizing module, a second directional coupling module, an amplitude stabilizing module and a combining module; and based on a sapphire microwave cavity working in a whispering gallery mode through the connection relation among the modules, two high-Q-value E-mode oscillation signals and two high-Q-value H-mode oscillation signals are separated through an electrical means, the H-mode oscillation signals are used as main oscillation signals, phase and amplitude change information is extracted from the E-mode oscillation signals and used as feedback control signals, the main oscillation signals are stabilized, extra modulation signals are not needed, and therefore microwave signals with extremely low stray, high frequency stability and low phase noise are obtained. Compared with circuit devices used in low-temperature sapphire frequency sources at home and abroad, the low-stray-power-factor-type low-noise-rejection-type circuit has the advantages while high frequency stability and low-rejection-.
The foregoing general description and the following description are exemplary and explanatory only and are not restrictive of the application.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the accompanying drawings and not in limitation thereof, in which elements having the same reference numeral designations are shown as like elements and not in limitation thereof, and wherein:
fig. 1 is a schematic structural diagram of a control device for a sapphire frequency source provided by the present invention;
description of reference numerals:
1-a low-temperature device, 2-a microwave cavity, 3-a second coupler, 4-a first microwave isolator, 5-a first band-pass filter, 6-a first microwave amplifier, 7-a first directional coupler, 8-a voltage-controlled attenuator, 9-a voltage-controlled phase shifter, 10-a combiner, 11-a second microwave isolator, 12-a second band-pass filter, 13-a second directional coupler, 14-a second microwave amplifier, 15-a phase shifter, 16-a third directional coupler, 17-a first detector, 18-a first phase-locked amplifier, 19-a second detector, 20-a second phase-locked amplifier, 21-a first coupler and 22-a third coupler.
Detailed Description
So that the manner in which the features and elements of the disclosed embodiments can be understood in detail, a more particular description of the disclosed embodiments, briefly summarized above, may be had by reference to the embodiments, some of which are illustrated in the appended drawings. In the following description of the technology, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, one or more embodiments may be practiced without these details. In other instances, well-known structures and devices may be shown in simplified form in order to simplify the drawing.
A control device for a sapphire frequency source, comprising: the device comprises a vibration generating module, an auxiliary vibration module, a first directional coupling module, a phase stabilizing module, a second directional coupling module, an amplitude stabilizing module and a combining module.
The vibration generating module comprises a first coupling unit and a second coupling unit. The first coupling unit is arranged in the microwave cavity 2 of the sapphire frequency source. The second coupling unit is arranged on the wall of the microwave cavity 2. The first coupling unit includes a first coupler 21. The first coupler 21 is electrically connected to the combining module. The combiner module and the second coupling unit are electrically connected with the auxiliary vibration gate module. The auxiliary vibration module and the second directional coupling module are electrically connected with the first directional coupling module. The second directional coupling module is electrically connected with the amplitude stabilizing module. The phase stabilization module is electrically connected with the first directional coupling module and the second directional coupling module respectively.
As shown in fig. 1, the vibration generating module further includes: a first microwave isolator 4, a first band-pass filter 5, a first microwave amplifier 6, a first directional coupler 7, a voltage-controlled attenuator 8 and a voltage-controlled phase shifter 159. The first coupling unit further comprises a second coupler 3.
The second coupler 3, the first microwave isolator 4, the first band-pass filter 5, the first microwave amplifier 6, the first directional coupler 7, the voltage-controlled attenuator 8 and the voltage-controlled phase shifter 159 are electrically connected in sequence. The voltage-controlled phase shifter 159 is electrically connected to the combining module and the phase stabilization module, respectively.
The auxiliary vibration module comprises: a second microwave isolator 11, a second band-pass filter 12, a second microwave amplifier 14 and a phase shifter 15.
The second microwave isolator 11 is electrically connected to the second coupling unit. The second band-pass filter 12 is electrically connected to the second microwave isolator 11 and the first directional coupling module, respectively. The first directional coupling module is electrically connected with the second directional coupling module and the second microwave amplifier 14 respectively. The second microwave amplifier 14 is electrically connected to a phase shifter 15. The phase shifter 15 is electrically connected to the combining module. Wherein the second coupling unit comprises a third coupler 22.
The first directional coupling module includes: a second directional coupler 13.
The second directional coupler 13 is electrically connected to the second directional coupling module and the second microwave amplifier 14.
The phase stabilization module includes: a first detector 17 and a first phase-locked amplifier 18.
The first detector 17 is electrically connected to the second directional coupling module and the first phase-locked amplifier 18, respectively. The first phase-locked amplifier 18 is electrically connected to a voltage controlled phase shifter 159.
The second directional coupling module includes: a third directional coupler 16.
The third directional coupler 16 is electrically connected to the first directional coupling module, the first detector 17 and the amplitude stabilizing module, respectively.
The amplitude stabilization module includes: : a second detector 19 and a second lock-in amplifier 20.
The second detector 19 is electrically connected to the second directional coupling module and the second lock-in amplifier 20, respectively. The second lock-in amplifier 20 is electrically connected to the voltage controlled attenuator 8.
The combiner module includes a combiner 10. The combiner 10 is electrically connected with the main vibration module and the auxiliary vibration module respectively.
The following detailed description of the specific connection relationship and the operation principle of the control device provided by the present invention is based on the specific structure of each module provided above:
A. the connection relation is specifically as follows:
the low-temperature device 1 in the sapphire frequency source provides a low-temperature working environment for the microwave cavity 2 of the sapphire frequency source, the microwave cavity 2 is provided with two coupling units, the second coupler 3 and the first coupler 21 which are positioned on the side wall of the microwave cavity are first coupling units, and the two couplers form a coupling ring for magnetic field coupling. The third coupler 22 on the upper cover of the microwave cavity 2 is a coupling probe for electric field coupling.
The second coupler 3 is connected with the first microwave isolator 4, the first microwave isolator 4 is connected with the first band-pass filter 5, the first band-pass filter 5 is connected with the first microwave amplifier 6, the first microwave amplifier 6 is connected with the first directional coupler 7, the first directional coupler 7 is connected with the voltage-controlled attenuator 8, the voltage-controlled attenuator 8 is connected with the voltage-controlled phase shifter 9, the voltage-controlled phase shifter 9 is connected with the combiner 10, the combiner 10 is connected with the first coupler 21, and the connection loop forms a master oscillation loop of the whole control device.
The third coupler 22 is connected with the second microwave isolator 11, the second microwave isolator 11 is connected with the second band-pass filter 12, the second band-pass filter 12 is connected with the second directional coupler 13, one output port of the second directional coupler 13 is connected with the second microwave amplifier 14, the second microwave amplifier 14 is connected with the phase shifter 15, the phase shifter 15 is connected with the combiner 10, and the connection loop forms an auxiliary oscillation loop of the whole control device.
The second output port of the second directional coupler 13 is connected to the third directional coupler 16, one output port of the third directional coupler 16 is connected to the first detector 17, the first detector 17 is connected to the first phase-locked amplifier 18, the first phase-locked amplifier 18 is connected to the voltage-controlled phase shifter 9, and this connection loop constitutes a phase stabilization loop of the entire control apparatus.
The second output port of the third directional coupler 16 is connected to a second detector 19, and the second detector 19 is connected to a second lock-in amplifier 20, and this connection loop constitutes an amplitude stabilizing loop of the entire control apparatus.
The sapphire frequency source adopted by the invention specifically comprises: the device comprises a G-M refrigerator, a rubber corrugated pipe, a refrigerator support, a vacuum cover, a primary cold screen, a secondary cold screen 6, a cold transmission assembly, a microwave cavity, a vacuum cover support, a second shock absorber, a first shock absorber, a universal wheel (caster wheel), a helium cavity, a first temperature sensor, a temperature controller, a vacuum flange, an isolator, a filter, a manual phase shifter, a low-phase noise amplifier, a directional coupler and a second temperature sensor. The G-M refrigerator is used as a cold source, helium is compressed, low-temperature helium is stored in the helium cavity, and cold energy is transferred to the microwave cavity through the cold transfer assembly. The whole system is a closed circulation system, helium is recycled in the working process, and the whole system continuously operates. The G-M refrigerator is connected with the vacuum cover and the microwave cavity through rubber bellows, meanwhile, low-temperature helium is used for cold transmission, and the refrigerator is not directly contacted with the microwave cavity, so that ultralow vibration control of the position of the microwave cavity is realized.
In order to reduce heat leakage, a primary cold screen and a secondary cold screen are arranged in a frequency source, a simulation model is established by utilizing a multilayer reflection principle, and the positions, thicknesses and sizes of the primary cold screen and the secondary cold screen are calculated to obtain the maximum thermal resistance. When the microwave source is a 10GHz microwave source, the size of the primary cold screen is selected as follows: the diameter is 161mm, the wall thickness is 4.2mm, the height is 142mm, and the material is oxygen-free copper. The size of the secondary cold screen is selected as follows: the diameter is 149mm, the wall thickness is 2.5mm, the height is 116mm, and the material is oxygen-free copper.
Before working, the whole vacuum cover is in a vacuum environment, so that helium can be conveniently replaced by a frequency source. In the working process, the temperature values of the microwave cavity and the helium cavity are detected through the first temperature sensor and the second temperature sensor, signals are transmitted to the temperature controllers through the vacuum flanges through cables, and the temperature controllers perform high-precision temperature control. The microwave cavity works in a low-temperature environment, an oscillation signal of the microwave cavity is connected to the isolator through the microwave cable and the vacuum flange, the isolator, the filter, the manual phase shifter, the low-phase noise amplifier and the directional coupler are sequentially connected, and then the directional coupler is connected with the microwave cavity again through the microwave cable to form an oscillation loop.
When the device is used, the device type is selected according to the working parameters of the microwave cavity, and the low-phase noise device (an isolator, a filter, a manual phase shifter, a low-phase noise amplifier and a directional coupler) of the corresponding frequency band is selected. And after the microwave cavity is assembled, vacuumizing the vacuum cover, stopping vacuumizing when the vacuum degree reaches 1E-4Pa, and closing the valve. And opening the refrigerating machine and the temperature controller, setting a temperature value in the temperature controller, compressing helium gas by the refrigerating machine to obtain low-temperature helium gas, controlling the temperature by the temperature controller, stabilizing the temperature of the position of the microwave cavity near a set value, and setting the set value according to the specific power of the required frequency source. And after the isolator, the filter, the manual phase shifter, the low-phase noise amplifier and the directional coupler are connected and powered up, a microwave signal oscillation loop is formed, and when the parameters of the manual phase shifter and the low-phase noise amplifier are properly adjusted, the loop starts oscillation, and a high-index signal is sent out from the directional coupler.
B. Based on the connection relation, the working principle is as follows:
when in use, the device is selected according to the working parameters of the microwave cavity. After the microwave cavity 2 is assembled, the low-temperature system is started, and when the temperature value is stabilized at any temperature point between 4K and 15K, the connection and the power-up of circuit devices are completed. And adjusting the control voltage parameter of the voltage-controlled phase shifter 10 to start oscillation of the master oscillation loop. The first band-pass filter 5 with suitable parameters is selected to make the master oscillator loop oscillate in the high-Q mode E. And adjusting the parameters of the phase shifter 15 to start oscillation of the auxiliary oscillation loop, and selecting a second band-pass filter 12 with proper parameters to enable the auxiliary oscillation loop to oscillate on a high-Q-value H mode. And partial signals in the auxiliary oscillation loop are coupled and output through the second directional coupler 13 and enter the phase stabilization loop, and the signals contain information such as phase and amplitude fluctuation of the oscillation signals of the cavity body of the microwave cavity. The signal is divided into two paths after passing through a third directional coupler 16, one path is detected by a first detector 17, and then a voltage signal is input into a voltage-controlled phase shifter 9 through a first phase-locked amplifier 18 so as to carry out back control on the phase of the signal in the main oscillation loop and enable the phase fluctuation of the microwave signal in the main oscillation loop to reach a minimum value; the other path enters an amplitude stabilizing loop, after being detected by a second detector 19 and passing through a second phase-locked amplifier 20, a voltage signal is input into a voltage-controlled attenuator 8 to carry out back control on the amplitude of the signal in the main oscillation loop, so that the amplitude fluctuation of the microwave signal in the main oscillation loop reaches a minimum value, and finally, the microwave signal with the characteristics of low stray, low phase noise, high frequency stability and the like is output from a first directional coupler 7.
A specific embodiment is provided below to further illustrate the above-described advantages of the present invention for providing a control device for a sapphire frequency source. In the embodiment, a microwave source with an output signal frequency of 10GHz is taken as an example for specific description, and in a specific application, the output signal frequency of the control device provided by the present invention can be adjusted and selected according to actual requirements.
The specific connection of the control device provided above in accordance with the present invention loads each coupler onto the microwave cavity, which is then loaded into the cryogenic device. When the temperature is stabilized at 6K, the E mode with the oscillation frequency of 10GHz can reach the loaded Q value of 1E9, the high Q value H mode nearby the E mode is selected as the auxiliary mode, the resonance frequency is 9.1GHz, and the Q value is 1E 8. Selecting specific working modes and parameters of each microwave isolator, each bandpass filter, each microwave amplifier, each directional coupler, each voltage-controlled attenuator, each voltage-controlled phase shifter, a combiner, a phase shifter, each detector and each phase-locked amplifier according to corresponding working frequencies, selecting a microwave amplifier with proper gain according to loop loss, and connecting according to the sequence of figure 1. To achieve a microwave source output of 10GHz, the gain of each microwave amplifier is selected to be 44dB in this embodiment.
The voltage-controlled phase shifter 9 is pre-supplied with a control voltage, and the voltage value is adjusted to start oscillation of the master oscillation loop. And adjusting the parameters of the phase shifter 15 to start the oscillation of the auxiliary oscillation loop. The parameters of the first phase-locked amplifier 18 are adjusted to lock the phase-stabilized loop. The parameters of the second lock-in amplifier 20 are adjusted to cause the amplitude stabilization loop to lock. The signal output by the first directional coupler 7 is monitored. In this embodiment, the spurs within 1kHz offset are below 110dBm, which is better than the prior art.
The above description and drawings sufficiently illustrate embodiments of the disclosure to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others. The scope of the disclosed embodiments includes the full ambit of the claims, as well as all available equivalents of the claims. As used in this application, although the terms "first," "second," etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, unless the meaning of the description changes, so long as all occurrences of the "first element" are renamed consistently and all occurrences of the "second element" are renamed consistently. The first and second elements are both elements, but may not be the same element. Furthermore, the words used in the specification are words of description for example only and are not limiting upon the claims. As used in the description of the embodiments and the claims, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Similarly, the term "and/or" as used in this application is meant to encompass any and all possible combinations of one or more of the associated listed. Furthermore, the terms "comprises" and/or "comprising," when used in this application, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Without further limitation, an element defined by the phrase "comprising an …" does not exclude the presence of other identical elements in a process, method or device comprising the element. In this document, each embodiment may be described with emphasis on differences from other embodiments, and the same and similar parts between the respective embodiments may be referred to each other. For methods, products, etc. of the embodiment disclosure, reference may be made to the description of the method section for relevance if it corresponds to the method section of the embodiment disclosure.
Those of skill in the art would appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software may depend upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the disclosed embodiments. It can be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working processes of the system, the apparatus and the unit described above may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the embodiments disclosed herein, the disclosed methods, products (including but not limited to devices, apparatuses, etc.) may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, a division of a unit may be merely a division of a logical function, and an actual implementation may have another division, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form. Units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to implement the present embodiment. In addition, functional units in the embodiments of the present disclosure may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit.
The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to embodiments of the present disclosure. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). In some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. In the description corresponding to the flowcharts and block diagrams in the figures, operations or steps corresponding to different blocks may also occur in different orders than disclosed in the description, and sometimes there is no specific order between the different operations or steps. For example, two sequential operations or steps may in fact be executed substantially concurrently, or they may sometimes be executed in the reverse order, depending upon the functionality involved. Each block of the block diagrams and/or flowchart illustrations, and combinations of blocks in the block diagrams and/or flowchart illustrations, can be implemented by special purpose hardware-based systems that perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
Claims (4)
1. A control device for a sapphire frequency source, comprising: the device comprises a vibration generating module, an auxiliary vibration module, a first directional coupling module, a phase stabilizing module, a second directional coupling module, an amplitude stabilizing module and a combining module;
the vibration generating module comprises a first coupling unit and a second coupling unit; the first coupling unit is arranged in a microwave cavity of the sapphire frequency source; the second coupling unit is arranged on the wall of the microwave cavity; the first coupling unit comprises a first coupler; the first coupler is electrically connected with the combining module; the combiner module and the second coupling unit are electrically connected with the auxiliary vibration module; the auxiliary vibration module and the second directional coupling module are electrically connected with the first directional coupling module; the second directional coupling module is electrically connected with the amplitude stabilizing module; the phase stabilization module is electrically connected with the first directional coupling module and the second directional coupling module respectively;
the vibration generation module further includes: the microwave isolator comprises a first microwave isolator, a first band-pass filter, a first microwave amplifier, a first directional coupler, a voltage-controlled attenuator and a voltage-controlled phase shifter; the first coupling unit further comprises a second coupler;
the second coupler, the first microwave isolator, the first band-pass filter, the first microwave amplifier, the first directional coupler, the voltage-controlled attenuator and the voltage-controlled phase shifter are electrically connected in sequence; the voltage-controlled phase shifter is electrically connected with the combining module and the phase stabilizing module respectively;
the auxiliary vibration module comprises: the second microwave isolator, the second band-pass filter, the second microwave amplifier and the phase shifter;
the second microwave isolator is electrically connected with the second coupling unit; the second band-pass filter is electrically connected with the second microwave isolator and the first directional coupling module respectively; the first directional coupling module is electrically connected with the second directional coupling module and the second microwave amplifier respectively; the second microwave amplifier is electrically connected with the phase shifter; the phase shifter is electrically connected with the combining module;
the phase stabilization module includes: a first detector and a first phase-locked amplifier;
the first detector is electrically connected with the second directional coupling module and the first phase-locked amplifier respectively; the first phase-locked amplifier is electrically connected with the voltage-controlled phase shifter;
the amplitude stabilization module includes: a second detector and a second lock-in amplifier;
the second detector is electrically connected with the second directional coupling module and the second lock-in amplifier respectively; the second lock-in amplifier is electrically connected with the voltage-controlled attenuator.
2. The control device for the sapphire frequency source as claimed in claim 1, wherein the first directional coupling module comprises: a second directional coupler;
the second directional coupler is electrically connected with the second directional coupling module and the second microwave amplifier.
3. The control device for the sapphire frequency source as claimed in claim 1, wherein the second directional coupling module includes: a third directional coupler;
the third directional coupler is electrically connected with the first directional coupling module, the first detector and the amplitude stabilizing module respectively.
4. The control device for a sapphire frequency source as set forth in claim 1, wherein the combining module includes a combiner; the combiner is electrically connected with the vibration generating module and the auxiliary vibration module respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011539771.XA CN112564702B (en) | 2020-12-23 | 2020-12-23 | Control device for sapphire frequency source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011539771.XA CN112564702B (en) | 2020-12-23 | 2020-12-23 | Control device for sapphire frequency source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112564702A CN112564702A (en) | 2021-03-26 |
| CN112564702B true CN112564702B (en) | 2022-06-24 |
Family
ID=75031618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011539771.XA Active CN112564702B (en) | 2020-12-23 | 2020-12-23 | Control device for sapphire frequency source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112564702B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6714089B2 (en) * | 2002-05-29 | 2004-03-30 | Xytrans, Inc. | High frequency signal source and method of generating same using dielectric resonator oscillator (DRO) circuit |
| CN103560380B (en) * | 2013-11-12 | 2015-12-30 | 东南大学 | A kind of stable microwave oscillator |
| CN107154799B (en) * | 2017-04-01 | 2020-04-14 | 北京无线电计量测试研究所 | Sapphire microwave frequency source and control method |
| CN107134998B (en) * | 2017-04-01 | 2020-04-21 | 北京无线电计量测试研究所 | Microwave frequency source |
| CN111147073B (en) * | 2019-12-12 | 2022-05-27 | 北京无线电计量测试研究所 | Microwave frequency locking device |
-
2020
- 2020-12-23 CN CN202011539771.XA patent/CN112564702B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112564702A (en) | 2021-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Frerking | Crystal oscillator design and temperature compensation | |
| Rayas-Sanchez | Power in simplicity with ASM: Tracing the aggressive space mapping algorithm over two decades of development and engineering applications | |
| Shu et al. | A 2-D mode-switching quad-core oscillator using EM mixed-coupling resonance boosting | |
| CN107134998B (en) | Microwave frequency source | |
| CN105226952A (en) | A kind of constant current constant frequency inductively transmission system and method for designing thereof | |
| CN112564702B (en) | Control device for sapphire frequency source | |
| Taber et al. | Microwave oscillators incorporating cryogenic sapphire dielectric resonators | |
| Fei et al. | A 96-GHz oscillator by high-Q differential transmission line loaded with complementary split-ring resonator in 65-nm CMOS | |
| CN104935291B (en) | A kind of Low phase noise sapphire microwave oscillator | |
| CN112671394A (en) | Sapphire frequency source | |
| CN107154799B (en) | Sapphire microwave frequency source and control method | |
| Bakr | Triple-mode microwave filters with arbitrary prescribed transmission zeros | |
| Manjunatha et al. | Design and simulation of ku-band voltage tuned dielectric resonator oscillator | |
| Su et al. | Ku-Band Push-Push VCO Based on Substrate Integrated Waveguide Resonator. | |
| Burns et al. | Fundamental-Mode Pierce Oscillators Utilizing Bulk-Acoustic-Wave Resonators in the 250-300MHz Range (Short Papers) | |
| CN208675201U (en) | A kind of small-sized millimeter wave frequency source device | |
| Han et al. | A 6.78-MHz distance-insensitive wireless power transfer system with a dual-coupled L-type matching network | |
| Alexeychik et al. | Modeling the Frequency Characteristics of a Band-Pass Filter for a Mobile Radio-Relay Link Based on Microwave Dielectric Resonators | |
| Jia et al. | Design of a bulk acoustic wave filter for wi-fi band | |
| CN107450645B (en) | Radio-frequency power supply | |
| Goryachev et al. | Towards cryogenic quartz oscillators: Coupling of a bulk acoustic wave quartz resonator to a SQUID | |
| Acar | Why a Fully Integrated Translation Loop Device Achieves the Best Phase Noise Performance | |
| CN116613501A (en) | Electric tuning frequency resonant cavity and simulation method based on same | |
| Piquet et al. | New design of high-Q sapphire resonator with distributed Bragg reflector | |
| Boudot et al. | Development of ultra low phase noise X-band oscillators |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |