CN112563346B - Electrode structure - Google Patents
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- CN112563346B CN112563346B CN202011449819.8A CN202011449819A CN112563346B CN 112563346 B CN112563346 B CN 112563346B CN 202011449819 A CN202011449819 A CN 202011449819A CN 112563346 B CN112563346 B CN 112563346B
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Abstract
The embodiment of the application discloses electrode structure includes: a traveling wave electrode and a shielding structure; the traveling wave electrode is positioned in a semi-closed space formed by the shielding structure; wherein the shielding structure comprises a first partial shielding structure and a second partial shielding structure, and an opening is formed between the first partial shielding structure and the second partial shielding structure, so that a semi-closed space is formed.
Description
Technical Field
The application relates to the technical field of optical communication, in particular to an electrode structure.
Background
In the transmission scenario of the electro-optical modulator and the microwave radio frequency signal, it is necessary to ensure that the signal transmission line (i.e., the electrode structure) has strong robustness, i.e., is not interfered by the outside. At present, the common differential electrode structure and single-ended electrode structure have the problem that the signal quality is affected by crosstalk, resonance and the like due to the fact that the electrode structure is easily interfered by an external structure and an adjacent channel because of the problem that part of the electrode structure is isolated and shielded without a metal ground.
The mainstream processing scheme at present is that structures which can cause signal interference, such as metal wires, electrodes and the like, are not adopted at two sides of an electrode structure as much as possible; there is also a processing scheme to ensure that the distance between the multipath signals is as large as possible in the presence of the multipath signals to ensure that crosstalk between the multipath signals is not generated. However, the above processing scheme imposes a great limitation on the layout and design of the chip, so that some structures for ensuring reliability cannot be arranged around the electrode, great hidden danger is brought to flexibility in chip design and reliability in later use, and application scenarios of the electrode structure are greatly limited.
Disclosure of Invention
In view of the above, the embodiments of the present application provide an electrode structure to solve at least one problem in the prior art.
In order to achieve the above purpose, the technical solution of the embodiment of the present application is implemented as follows:
an embodiment of the present application provides an electrode structure, including: a traveling wave electrode and a shielding structure; the traveling wave electrode is positioned in a semi-closed space formed by the shielding structure;
wherein the shielding structure comprises a first partial shielding structure and a second partial shielding structure, and an opening is formed between the first partial shielding structure and the second partial shielding structure, so that a semi-closed space is formed.
In an alternative embodiment, the first partial shielding structure comprises a first side shielding structure and a first top shielding structure; the second partial shielding structure comprises a second side shielding structure and a second top shielding structure;
the first side surface shielding structure and the first top surface shielding structure are connected to the first boundary line, the second side surface shielding structure and the second top surface shielding structure are connected to the second boundary line, and the opening is formed between the first top surface shielding structure and the second top surface shielding structure.
In an optional implementation manner, an included angle between a plane where the first side surface shielding structure is located and a plane where the first top surface shielding structure is located is a first angle, an included angle between a plane where the second side surface shielding structure is located and a plane where the second top surface shielding structure is located is a second angle, and the first angle is equal to the second angle.
In an alternative embodiment, the first angle and the second angle are both greater than or equal to 90 degrees.
In an alternative embodiment, the plane of the first side shielding structure and the plane of the second side shielding structure are parallel.
In an alternative embodiment, the axis of the traveling-wave electrode is parallel to the first boundary line and the second boundary line.
In an optional embodiment, a distance between an axis where the traveling wave electrode is located and a plane where the first side shielding structure is located is a first distance, a distance between the axis where the traveling wave electrode is located and the plane where the second side shielding structure is located is a second distance, and the first distance is equal to the second distance.
In an alternative embodiment, the first side shielding structure and the second side shielding structure are located on different sides of the traveling wave electrode, and the first top shielding structure and the second top shielding structure are located on the same side of the traveling wave electrode.
In an alternative embodiment, the first side shielding structure includes a metal sheet structure and a structure composed of a plurality of metal columns arranged at intervals;
the second side shielding structure comprises a metal sheet structure and a structure consisting of a plurality of metal columns which are arranged at intervals.
In an alternative embodiment, the first top shielding structure comprises a metal sheet structure and a metal sheet structure in a grid structure;
the second top shielding structure comprises a metal sheet structure and a metal sheet structure in a grid structure.
In an alternative embodiment, the first side shielding structure, the second side shielding structure, the first top shielding structure, and the second top shielding structure satisfy an impedance matching requirement with respect to a positional relationship between the traveling wave electrodes.
In an alternative embodiment, the traveling wave electrode comprises two parallel electrodes, and an active modulation region is arranged between the two parallel electrodes.
Because the electrode structure that this application embodiment provided includes shielding structure to make the microwave signal mode field of travelling wave electrode can not receive the influence and the loss of medium around, can reduce the transmission loss of travelling wave electrode like this, and then can promote the bandwidth of electrode structure. And furthermore, because the shielding structure is a semi-closed space formed by a first part shielding structure and a second part shielding structure, an opening is formed between the first part shielding structure and the second part shielding structure, that is, the shielding structure in the embodiment of the application is divided into two parts along the axis of the traveling wave electrode, so that the semi-closed shielding structure in the embodiment of the application can reduce parasitic capacitance caused by the shielding structure and further improve the bandwidth of the whole system.
Drawings
FIG. 1 is a schematic diagram of an electrode structure having a three-dimensional shielding structure;
FIG. 2 is a front view of one embodiment of an electrode structure provided in an example of the present application;
FIG. 3 is a top view of one embodiment of an electrode structure provided in an example of the present application;
fig. 4 is a front view of another embodiment of an electrode structure according to an embodiment of the present disclosure.
Detailed Description
Exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art, that the present application may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present application; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be appreciated that spatial relationship terms, such as "under … …," "under … …," "under … …," "over … …," "over," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
With the continuous progress and development of society, the demand of human beings on information is larger and larger, so that the data volume of information in modern society shows exponential explosion and growth. With the continuous development of optical communication technology, the transmission capacity has reached the order of 100T bits, the transmission capacity of 100G has gradually become the mainstream in network construction, and even the transmission capacity of 400G is partially used. In such a high-speed optical network, in addition to various algorithms, the three-dimensional integration of the electrode structure is also a crucial factor.
In order to realize the three-dimensional integration of the electrode structure, an electrode structure with a three-dimensional shielding structure is proposed, as shown in fig. 1, the three-dimensional shielding structure fully surrounds the traveling wave electrode, and the three-dimensional shielding structure is an integral structure, which causes the parasitic capacitance of the three-dimensional shielding structure to be very large, thereby affecting the system bandwidth.
Therefore, how to solve the electromagnetic shielding problem without affecting the bandwidth of the system becomes a technical problem to be solved urgently.
Therefore, the following technical scheme of the embodiment of the application is provided.
Fig. 2 is a front view of an embodiment of an electrode structure provided in an example of the present application, and fig. 3 is a top view of an embodiment of an electrode structure provided in an example of the present application, as shown in fig. 2 and 3, the electrode structure includes: a traveling wave electrode 100 and a shielding structure 200; the traveling wave electrode 100 is positioned in a semi-closed space formed by the shielding structure 200;
the shielding structure 200 includes a first partial shielding structure 210 and a second partial shielding structure 220, and an opening is formed between the first partial shielding structure 210 and the second partial shielding structure 220, so as to form a semi-enclosed space.
Because the electrode structure that this application embodiment provided includes shielding structure to make the microwave signal mode field of travelling wave electrode can not receive the influence and the loss of surrounding medium, can reduce the transmission loss of travelling wave electrode like this, and then can promote the bandwidth of electrode structure.
And because the shielding structure is the semi-closed space that comprises first partial shielding structure and second partial shielding structure, first partial shielding structure with the opening has between the second partial shielding structure, and the shielding structure in this application embodiment is followed the travelling wave electrode axis divide into two parts, compares in totally closed shielding structure from this, and the semi-closed shielding structure in this application embodiment can reduce shielding structure's parasitic capacitance by a wide margin and then promote entire system's bandwidth to can also adjust the size of opening according to actual demand, thereby adjust shielding structure's parasitic capacitance.
Furthermore, because the electromagnetic interference of the traveling wave electrode is concentrated on the two sides of the traveling wave electrode, the opening of the shielding structure is arranged above the traveling wave electrode in the embodiment of the application, so that the parasitic capacitance of the shielding structure can be greatly reduced on the premise of hardly influencing the shielding performance of the shielding structure. Therefore, the electrode structure provided by the embodiment of the application also improves the bandwidth of the electrode structure on the premise of realizing electromagnetic shielding.
In the embodiment of the present application, the first partial shielding structure 210 includes a first side shielding structure 211 and a first top shielding structure 212; the second partial shielding structure 220 includes a second side shielding structure 221 and a second top shielding structure 222; the first side surface shielding structure 211 and the first top surface shielding structure 212 are connected to a first boundary line, the second side surface shielding structure 221 and the second top surface shielding structure 222 are connected to a second boundary line, and the opening is formed between the first top surface shielding structure 212 and the second top surface shielding structure 222.
Here, the first top surface shielding structure 212 and the second top surface shielding structure 222 have the opening therebetween, thereby forming a semi-enclosed space.
In the embodiment of the present application, the first side shielding structure 211 and the second side shielding structure 221 have the same structure and the same size. The first top shielding structure 212 and the second top shielding structure 222 have the same structure and the same size.
In some embodiments, the sizes of the first side shielding structure 211 and the second side shielding structure 221 may be different, and the sizes of the first side shielding structure 211 and the second side shielding structure 221 may be adjusted according to the arrangement position of the traveling wave electrode. The sizes of the first top shielding structure 212 and the second top shielding structure 222 may be different, and the sizes of the first top shielding structure 212 and the second top shielding structure 222 may be adjusted according to the arrangement position of the traveling wave electrode.
In practical applications, the first top shielding structure 212 and the second top shielding structure 222 may be connected to an external ground for use as a reference ground.
In the embodiment of the present application, first, a first side shielding structure 211 and a second side shielding structure 221 perpendicular to the plane of the traveling wave electrode are formed on the left and right sides of the traveling wave electrode 100. On the basis of completing the side shielding structures on both sides of the traveling wave electrode 100, forming a first top shielding structure 212 on top of the first side shielding structure 211 above the electrode, where the first side shielding structure 211 and the first top shielding structure 212 are connected to a first boundary line, where the first boundary line may be regarded as the top of the first side shielding structure 211; a second top shielding structure 222 is formed above the electrode and on top of the second side shielding structure 221, and the second side shielding structure 221 and the second top shielding structure 222 are connected to a second boundary line, where the second boundary line may be regarded as the top of the second side shielding structure 221. Thus, the first partial shielding structure 210 and the second partial shielding structure 220 having the electromagnetic shielding function are formed.
In the embodiment of the present application, the shielding structure 200 is used for shielding electromagnetic signals, and the first side surface shielding structure 211 and the first top surface shielding structure 212 are electrically connected to form an integral structure, so as to realize equipotential; the second side shielding structure 221 and the second top shielding structure 222 are electrically connected to form an integral structure, and realize equipotential, thereby forming a shielding structure of a semi-enclosed space.
Because shielding structure's protection can greatly reduce around metallic structure and wire to the influence of travelling wave electrode, so, can add metallic structure and wiring outside shielding structure wantonly for the flexibility improvement by a wide margin of chip design, owing to there is shielding structure, under the parallel condition of multichannel in addition, the crosstalk between several ways of travelling wave electrodes can be restrained, consequently can promote the integrated density of chip by a wide margin.
In this embodiment, an included angle between a plane where the first side surface shielding structure 211 is located and a plane where the first top surface shielding structure 212 is located is a first angle, an included angle between a plane where the second side surface shielding structure 221 is located and a plane where the second top surface shielding structure 222 is located is a second angle, and the first angle is equal to the second angle.
In an embodiment of the present application, the first angle and the second angle are both greater than or equal to 90 degrees. In practical application, the sizes of the first angle and the second angle may be adjusted according to practical shielding requirements. Here, as shown in fig. 2, the first angle and the second angle are 90 degrees.
In the embodiment of the present application, the plane of the first side shielding structure 211 is parallel to the plane of the second side shielding structure 221.
In the embodiment of the present application, a distance between an axis of the traveling-wave electrode 100 and a plane of the first side shielding structure 211 is a first distance, a distance between an axis of the traveling-wave electrode 100 and a plane of the second side shielding structure 221 is a second distance, and the first distance is equal to the second distance.
Here, as shown in fig. 2 and 3, the first side shielding structure 211 and the second side shielding structure 221 are respectively located on two sides of the traveling wave electrode 100, and the distance between the traveling wave electrode 100 and the first side shielding structure 211 is equal to the distance between the traveling wave electrode 100 and the second side shielding structure 221.
In the embodiment of the present application, as shown in fig. 3, the axis of the traveling-wave electrode 100 is parallel to the first boundary line and the second boundary line.
Here, as shown in fig. 3, the extending direction of the traveling-wave electrode 100 is the same as the extending direction of the first partial shielding structure 210 and the extending direction of the second partial shielding structure 220. The extending direction of the traveling wave electrode 100 is the axial direction of the traveling wave electrode 100.
In the embodiment of the present application, as shown in fig. 2, the first side shielding structure 211 and the second side shielding structure 221 are located on different sides of the traveling wave electrode 100, and the first top shielding structure 212 and the second top shielding structure 222 are located on the same side of the traveling wave electrode 100.
Here, the first side shielding structure 211 and the second side shielding structure 221 are respectively located on both sides of the traveling wave electrode 100, and the first top shielding structure 212 and the second top shielding structure 222 are located above the traveling wave electrode 100.
Since the shielding structure comprises the first top shielding structure 212 and the second top shielding structure 222 above the traveling wave electrode 100, the traveling wave electrode is not interfered by the structure above the shielding structure, thus providing the possibility of three-dimensional integration of the electrode structure, and other types of chips, devices and various metal and non-metal materials can be arbitrarily stacked above the first top shielding structure and the second top shielding structure, for example, in the case that the electrode structure is an electrode structure of an electro-optical modulator, various electrically driven chips and the like can be three-dimensionally integrated above the electrode structure.
In the embodiment of the present application, the first side shielding structure 211 includes a metal sheet structure and a structure composed of a plurality of metal posts arranged at intervals; the second side shielding structure 221 includes a metal sheet structure and a structure composed of a plurality of metal columns arranged at intervals.
Here, when the first side shielding structure 211 and/or the second side shielding structure 221 are/is a structure composed of a plurality of metal pillars arranged at intervals, the metal pillars are perpendicular to the plane where the traveling wave electrode 100 is located, and meanwhile, according to the electromagnetic shielding theory, the interval between the metal pillars is required to be less than half of the working wavelength of the shielding signal.
In the embodiment of the present application, the first top shielding structure 211 includes a metal sheet structure and a metal sheet structure in a grid structure; the second top shielding structure 222 includes a metal sheet structure and a metal sheet structure in a grid structure.
Here, when the first top surface shielding structure 211 and/or the second top surface shielding structure 222 are a metal sheet structure having a grid structure, the grid structure is a grid having a spacing period, and the spacing period of the grid is required to be less than half of the shielding signal working waveguide according to the electromagnetic shielding theory.
Because the shielding structure is made of metal, the heat dissipation capability of the device adopting the electrode structure is greatly improved, such as the heat dissipation of the load and the thermal phase position part of the modulator is greatly improved, and the reliability of the device can be further improved.
In the embodiment of the present application, the first side shielding structure 211, the second side shielding structure 221, the first top shielding structure 212, and the second top shielding structure 222 satisfy the impedance matching requirement with respect to the position relationship between the traveling wave electrodes 100.
Here, the driving form of the traveling wave electrode 100 includes a single-ended driving form and a differential driving form. In a case that the traveling-wave electrode 100 is in a single-ended driving mode, the first side shielding structure 211, the second side shielding structure 221, the first top shielding structure 212, and the second top shielding structure 222 satisfy an impedance matching requirement of 50 ohms with respect to a positional relationship among the traveling-wave electrodes 100, specifically: the distance between the first side shielding structure 211 and the second side shielding structure 221 and the traveling wave electrode 100, and the distance between the first top shielding structure 212 and the second top shielding structure 222 and the traveling wave electrode 100 need to satisfy the impedance matching requirement of 50 ohms. In a case that the traveling-wave electrode 100 is in a differential driving mode, the first side shielding structure 211, the second side shielding structure 221, the first top shielding structure 212, and the second top shielding structure 222 satisfy an impedance matching requirement of 100 ohms with respect to a positional relationship among the traveling-wave electrodes 100, specifically: the distance between the first side shielding structure 211 and the second side shielding structure 221 and the traveling wave electrode 100, and the distance between the first top shielding structure 212 and the second top shielding structure 222 and the traveling wave electrode 100 need to satisfy the impedance matching requirement of 100 ohms.
In the embodiment of the present application, the traveling-wave electrode 100 includes two parallel electrodes, and an active modulation region 300 is disposed between the two parallel electrodes. As shown in fig. 2, the traveling-wave electrode 100 includes a first traveling-wave electrode 110 and a second traveling-wave electrode 120. Here, when the traveling-wave electrode 100 is in the single-ended driving mode, the first traveling-wave electrode 110 is grounded, and the second traveling-wave electrode 120 is connected with an electrical signal; when the traveling-wave electrode 100 is in a differential driving mode, the first traveling-wave electrode 110 and the second traveling-wave electrode 120 receive electrical signals, and the electrical signals of the first traveling-wave electrode 110 and the second traveling-wave electrode 120 are differential electrical signals.
In the embodiment of the present application, the active modulation region 300 and the traveling wave electrode 100 are used together for signal modulation.
In the embodiment of the present application, the traveling-wave electrode 100 may be made of a metallic microwave signal waveguide or a non-metallic conductor material. In practical applications, the metal microwave signal waveguide may be in a single-ended form, such as a waveguide structure of GSG (ground-signal-ground), GS (ground-signal), SG (signal-ground), etc.; the metal microwave signal waveguide may also be in a differential form, such as a differential electrode structure of SS (signal-signal), GSGSG (ground-signal-ground), and the like. In some embodiments, the structure of the traveling-wave electrode 100 may also be some variant structures, such as a differential electrode structure with a track formed by adding a track portion to a SS differential electrode structure, and various derivative structures may also be added.
Fig. 4 is a front view of another implementation manner of an electrode structure provided in an embodiment of the present application, and as shown in fig. 4, an included angle between a plane where a first side surface shielding structure 411 is located and a plane where a first top surface shielding structure 412 is located is a first angle, an included angle between a plane where a second side surface shielding structure 421 is located and a plane where a second top surface shielding structure 422 is located is a second angle, the first angle is equal to the second angle, and both the first angle and the second angle are greater than 90 degrees.
In some embodiments, the first angle and the second angle may be different, and the first angle and the second angle may be adjusted according to the setting position of the traveling-wave electrode.
The embodiment of the application discloses electrode structure includes: a traveling wave electrode and a shielding structure; the traveling wave electrode is positioned in a semi-closed space formed by the shielding structure; wherein the shielding structure comprises a first partial shielding structure and a second partial shielding structure, and an opening is formed between the first partial shielding structure and the second partial shielding structure, so that a semi-closed space is formed. Because the electrode structure that this application embodiment provided includes shielding structure to make the microwave signal mode field of travelling wave electrode can not receive the influence and the loss of medium around, can reduce the transmission loss of travelling wave electrode like this, and then can promote the bandwidth of electrode structure. And furthermore, because the shielding structure is a semi-closed space formed by a first part of shielding structure and a second part of shielding structure, and an opening is formed between the first part of shielding structure and the second part of shielding structure, that is, the shielding structure in the embodiment of the present application is divided into two parts along the axis of the traveling wave electrode, the semi-closed shielding structure in the embodiment of the present application can reduce the parasitic capacitance of the shielding structure and further improve the bandwidth of the whole system.
It should be appreciated that reference throughout this specification to "the present embodiment" or "some embodiments" means that a particular feature, structure or characteristic described in connection with the embodiments is included in at least one embodiment of the present application. Thus, the appearances of the phrase "the present embodiment" or "some embodiments" appearing in various places throughout the specification are not necessarily all referring to the same embodiments. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
Features disclosed in several of the product embodiments provided in the present application may be combined in any combination to yield new product embodiments without conflict.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (12)
1. An electrode structure, comprising: a traveling wave electrode and a shielding structure; the traveling wave electrode is positioned in a semi-closed space formed by the shielding structure;
wherein the shielding structure comprises a first partial shielding structure and a second partial shielding structure, and an opening is formed between the first partial shielding structure and the second partial shielding structure, so that a semi-closed space is formed; the opening is arranged above the traveling wave electrode.
2. The electrode structure of claim 1, wherein the first partial shielding structure comprises a first side shielding structure and a first top shielding structure; the second partial shielding structure comprises a second side shielding structure and a second top shielding structure;
the first side surface shielding structure and the first top surface shielding structure are connected to a first boundary line, the second side surface shielding structure and the second top surface shielding structure are connected to a second boundary line, and the opening is arranged between the first top surface shielding structure and the second top surface shielding structure.
3. The electrode structure of claim 2, wherein an angle between a plane of the first side shielding structure and a plane of the first top shielding structure is a first angle, an angle between a plane of the second side shielding structure and a plane of the second top shielding structure is a second angle, and the first angle and the second angle are equal.
4. The electrode structure of claim 3, wherein the first angle and the second angle are each greater than or equal to 90 degrees.
5. The electrode structure according to claim 3, characterized in that the plane of the first side shielding structure and the plane of the second side shielding structure are parallel.
6. An electrode structure according to any one of claims 2 to 5, characterized in that the axis of the travelling-wave electrode is parallel to the first and second boundary lines.
7. The electrode structure according to any one of claims 2 to 5, wherein a distance between an axis of the traveling wave electrode and a plane of the first side shielding structure is a first distance, a distance between an axis of the traveling wave electrode and a plane of the second side shielding structure is a second distance, and the first distance and the second distance are equal.
8. The electrode structure according to any one of claims 2 to 5, characterized in that the first and second side shielding structures are located on different sides of the travelling wave electrode, the first and second top shielding structures being located on the same side of the travelling wave electrode.
9. The electrode structure according to any one of claims 2 to 5,
the first side shielding structure comprises a metal sheet structure and a structure consisting of a plurality of metal columns which are arranged at intervals;
the second side shielding structure comprises a metal sheet structure and a structure formed by a plurality of metal columns which are arranged at intervals.
10. The electrode structure according to any one of claims 2 to 5,
the first top shielding structure comprises a metal sheet structure and a metal sheet structure in a grid structure;
the second top shielding structure comprises a metal sheet structure and a metal sheet structure in a grid structure.
11. The electrode structure according to any one of claims 2 to 5,
the first side surface shielding structure, the second side surface shielding structure, the first top surface shielding structure and the second top surface shielding structure meet the requirement of impedance matching relative to the position relation among the traveling wave electrodes.
12. The electrode structure according to any one of claims 1 to 5,
the traveling wave electrode comprises two parallel electrodes, and an active modulation region is arranged between the two parallel electrodes.
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| JPS63311365A (en) * | 1987-06-15 | 1988-12-20 | Fuji Xerox Co Ltd | Corona electrifying device |
| EP1079440A2 (en) * | 1999-08-26 | 2001-02-28 | Oki Electric Industry Co., Ltd. | Semiconductor light-receiving element |
| CN108780236A (en) * | 2016-03-18 | 2018-11-09 | 日本电信电话株式会社 | Optical modulator |
| CN111065254A (en) * | 2019-12-27 | 2020-04-24 | 武汉邮电科学研究院有限公司 | Low-loss differential electrode with three-dimensional shielding layer |
| CN211605368U (en) * | 2020-04-17 | 2020-09-29 | 安徽安努奇科技有限公司 | Filter structure and filter device |
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