CN112556868B - 一种基于组合热敏电参数灵敏度增强的SiC MOSFET结温检测方法 - Google Patents
一种基于组合热敏电参数灵敏度增强的SiC MOSFET结温检测方法 Download PDFInfo
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- G—PHYSICS
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101736211A (zh) * | 2009-12-16 | 2010-06-16 | 南京航空航天大学 | SiC晶须增强增韧的Mo2FeB2基金属陶瓷及其制备方法 |
CN105910730A (zh) * | 2016-05-10 | 2016-08-31 | 浙江大学 | 一种大功率igbt模块运行结温的在线检测系统及其检测方法 |
CN106571795A (zh) * | 2016-11-10 | 2017-04-19 | 南京航空航天大学 | 基于结温和电流反馈的SiC BJT比例驱动电路及其控制方法 |
CN211205553U (zh) * | 2019-12-27 | 2020-08-07 | 南通电博士自动化设备有限公司 | 一种低压计量箱温升测试装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109871591A (zh) * | 2019-01-24 | 2019-06-11 | 武汉大学 | 一种igbt功率模块在线估算结温的方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101736211A (zh) * | 2009-12-16 | 2010-06-16 | 南京航空航天大学 | SiC晶须增强增韧的Mo2FeB2基金属陶瓷及其制备方法 |
CN105910730A (zh) * | 2016-05-10 | 2016-08-31 | 浙江大学 | 一种大功率igbt模块运行结温的在线检测系统及其检测方法 |
CN106571795A (zh) * | 2016-11-10 | 2017-04-19 | 南京航空航天大学 | 基于结温和电流反馈的SiC BJT比例驱动电路及其控制方法 |
CN211205553U (zh) * | 2019-12-27 | 2020-08-07 | 南通电博士自动化设备有限公司 | 一种低压计量箱温升测试装置 |
Non-Patent Citations (3)
Title |
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Monitoring IGBT"s health condition via junction temperature variations;Bo Tian等;《2014 IEEE Applied Power Electronics Conference and Exposition》;20140424;第2550-2555页 * |
基于开通dids/dt的SiC MOSFET模块结温提取研究;黄德雷等;《电力电子技术》;20180731;第52卷(第7期);第73-75页 * |
基于组合式动态热敏电参数的功率IGBT模块结温提取研究与应用;王祥;《中国优秀硕士学位论文全文数据库(信息科技辑)》;20180715(第7期);第I135-134页 * |
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