CN112551530A - Production method of plasma transferred arc silicon powder - Google Patents

Production method of plasma transferred arc silicon powder Download PDF

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Publication number
CN112551530A
CN112551530A CN202011352489.0A CN202011352489A CN112551530A CN 112551530 A CN112551530 A CN 112551530A CN 202011352489 A CN202011352489 A CN 202011352489A CN 112551530 A CN112551530 A CN 112551530A
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silicon powder
plasma
transferred arc
steps
controlling
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柴立新
汪艳春
马仁友
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Ningbo Guangxin Nano Mat Co ltd
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Ningbo Guangxin Nano Mat Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Abstract

The invention discloses a method for producing plasma transferred arc silicon powder, which relates to the technical field of nano powder preparation, and the technical scheme comprises the following steps: step 1, filling raw materials into a graphite crucible of a reactor; step 2, controlling the pressure in the reactor to be 70-100 kPa; igniting and arcing to enable the electric arc to be combusted between the plasma gun and raw material particles, and keeping the current of the plasma gun and the temperature of the silicon material stable when the temperature of the raw material in the graphite crucible is more than or equal to 1600 ℃ until the raw material is completely melted; step 4, increasing the current of the plasma gun, and controlling the current of the plasma gun to be 500-600A; step 5, gradually evaporating the molten raw materials into corresponding particles, then feeding the particles into a condenser, and introducing cooling gas into the condenser to crystallize and nucleate the evaporated raw materials to form silicon powder; and 6, collecting the silicon powder by a collector. The invention has the effects of reducing the process complexity and effectively avoiding environmental pollution.

Description

Production method of plasma transferred arc silicon powder
Technical Field
The invention relates to the technical field of nano powder, in particular to a method for producing plasma transferred arc silicon powder.
Background
With the demand of new energy automobiles, communication and portable equipment and the like for high capacity and high endurance capacity of lithium ion batteries, the development of lithium ion batteries reaches a bottleneck. For the negative electrode, the currently adopted negative electrode materials are various carbon materials mainly comprising graphite, the theoretical capacity of the carbon materials is only 372mAh/g, the theoretical capacity is close to the theoretical capacity in the practical application process, and the high capacity requirement is difficult to achieve. Therefore, research on the high-specific-capacity negative electrode active material is trending, wherein the theoretical capacity of the nano silicon powder is far higher than that of the graphite carbon material, 4200mAh/g can be achieved, resources are relatively rich, and the nano silicon powder is a main choice of a next-generation novel silicon-carbon negative electrode material.
Currently, there are known several methods for producing nano silicon powder, including 1) a polishing method using polycrystalline silicon as a raw material, 2) a chemical vapor deposition method using silane as a raw material, and 3) a redox method using silica as a raw material.
The grinding method is characterized in that zirconia beads are used as grinding materials, the silicon material in a larger size is ground into powder with a nanometer size through a mechanical grinding method, the problems of irregular shape, uneven granularity, high impurity content, complex subsequent material process and the like exist when the silicon powder is produced through the grinding method, the size of the silicon powder produced through the grinding method is large, and the silicon powder below 100nm is difficult to produce through grinding.
Although the nano silicon powder produced by the chemical vapor deposition method has uniform particle size distribution and high purity, the chemical vapor deposition method and silane are decomposed into silicon and hydrogen under the high-hydrogen dilution condition under the action of external energy such as heat, microwave, laser, plasma and the like, and are rapidly condensed in a gas phase environment, so that the nano silicon powder is prepared. Silane is a toxic explosive gas, safety protection is an important problem of a silane method, and the problem is not completely solved so far, and the harm to the environment and the personal safety is not ignored.
The redox method using silicon dioxide as raw material is a process of making silicon powder by making silicon dioxide and some more active metals such as aluminium, magnesium and non-metal carbon, etc. produce oxidation-reduction reaction, SiO2+2Mg→Si+MgO2. Although the method can prepare the silicon powder with higher purity, the production steps are complicated, the waste liquid treatment is difficult, the production cost is higher, and the large-scale industrial production is not easy to realize, so that the improvement is needed.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide the production method of the plasma transfer arc silicon powder, which has the effects of reducing the process complexity and effectively avoiding environmental pollution.
In order to achieve the purpose, the invention provides the following technical scheme:
a production method of plasma transferred arc silicon powder comprises the following steps:
step 1, filling raw materials into a graphite crucible of a reactor;
step 2, vacuumizing the reactor to be less than or equal to 10kPa, introducing argon, and controlling the pressure in the reactor to be 70-100 kPa;
step 3, igniting and arcing, burning the electric arc between the plasma gun and the raw material, controlling the current of the plasma gun to be less than 500A, keeping the current of the plasma gun and the temperature of the raw material stable when the temperature of the raw material in the graphite crucible is more than or equal to 1600 ℃, and continuing the step 4 after the raw material is completely melted;
step 4, increasing the current of the plasma gun, and controlling the current of the plasma gun to be 500-600A;
step 5, gradually evaporating the molten raw materials into corresponding particles, then feeding the particles into a condenser, introducing cooling gas into the condenser to crystallize and nucleate the evaporated raw materials and form silicon powder, and controlling the cooling temperature to be 400-500 ℃ and the flow rate of the cooling gas to be 6-10 m/s;
and 6, collecting the silicon powder by a collector, and further cooling to obtain the silicon powder, wherein the cooling temperature is 80-150 ℃.
By adopting the technical scheme, the raw materials are protected by argon in the graphite crucible and then are melted and evaporated under the plasma arc, so that the raw materials react in the condensation process in the condenser and obtain the nano-silicon powder, the difficulty of the preparation process is obviously reduced, and the environmental pollution is effectively avoided.
The invention is further configured to: in step 1, a copper bar is inserted into the graphite crucible, and the copper bar is used for an arc ignition electrode.
By adopting the technical scheme, the effect of effectively melting raw materials is realized.
The invention is further configured to: in the step 2, the argon is circularly connected with the collector through a draught fan.
By adopting the technical scheme, the argon is recycled, no wastewater or waste gas is discharged in the production process, and the safety of the production process is obviously improved.
The invention is further configured to: in step 4, the control voltage is 140-160V.
Through adopting above-mentioned technical scheme, realize the effect of effective evaporation raw materials.
The invention is further configured to: in step 6, the particle size of the silicon powder is 10-200 nm.
By adopting the technical scheme, the obtained silicon powder has the effects of uniform particle size and low impurity content.
The invention is further configured to: in step 6, the silicon powder collected and formed by the collector is collected by the material receiving hopper after being reversely blown by the back blowing device.
By adopting the technical scheme, the purity of the silicon powder is obviously improved.
The invention is further configured to: the back-blowing pressure of the back-blowing device is controlled to be 0.5-0.6 MPa.
The invention is further configured to: the silicon powder is spherical.
The invention is further configured to: the silicon powder is silicon powder, iron silicide or manganese silicide powder and the like.
In conclusion, the invention has the following beneficial effects:
1. by adopting argon as protective gas, the effects of no waste water and waste gas emission in the production process are realized, and the safety of the production process is obviously improved;
2. the obtained silicon powder is spherical, and has uniform particle size distribution, low impurity content and high purity;
3. the problem that the traditional metallurgical method or physical preparation method cannot meet the requirement of preparing the transition metal silicon and silicide nano material is effectively solved.
4. Simple process, low production cost and suitability for continuous and stable quantitative production.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for preparing silicon nanopowder by PVD method according to this embodiment.
Description of reference numerals: 1. a graphite crucible; 2. a reactor; 3. a condenser; 4. a collector; 5. a material receiving hopper.
Detailed Description
In order to make the technical solution and advantages of the present invention more clear, the present invention will be further described in detail with reference to the accompanying drawings.
As shown in fig. 1, a device for preparing nano silicon powder by a plasma transferred arc method comprises a reactor 2, a condenser 3 and a collector 4. A graphite crucible 1 and a plasma gun were disposed in the reactor 2. The graphite crucible 1 is used for placing raw materials, and the plasma gun is used for heating the raw materials in the graphite crucible. Meanwhile, argon is filled in the reactor 2, so that the argon is used as protective gas to avoid oxidation reaction of raw materials in the reactor 2; the raw material is evaporated and then enters the condenser 3 for condensation and crystallization nucleation, and argon is introduced into the condenser 3, so that the raw material moving from the condenser 3 to the collector 4 forms silicon powder. It should be mentioned that a receiving hopper 5 is arranged at the bottom of the collector 4, and the silicon powder in the collector 4 enters the receiving hopper 5 to be collected after passing through a back-blowing device at the hopper opening of the receiving hopper 5.
A production method of plasma transferred arc silicon powder comprises the following steps:
step 1, filling raw materials into a graphite crucible of a reactor, wherein a copper bar for an arc ignition electrode is inserted into the graphite crucible;
step 2, vacuumizing the reactor to be less than or equal to 10kPa, introducing argon, and controlling the pressure in the reactor to be 70-100kPa, wherein the argon is circularly connected with a collector through a draught fan;
step 3, igniting and arcing, burning the electric arc between the plasma gun and the metal silicon particles, controlling the current of the plasma gun to be less than 500A, keeping the current of the plasma gun and the temperature of the silicon material stable when the temperature of the silicon material in the graphite crucible is more than or equal to 1600 ℃, and continuing the step 4 after the raw material is completely melted;
step 4, increasing the current of the plasma gun, controlling the current of the plasma gun to be 500-600A, and controlling the voltage to be 140-160V;
step 5, gradually evaporating the molten raw materials into corresponding particles, then feeding the particles into a condenser, introducing cooling gas into the condenser to crystallize and nucleate the evaporated raw materials and form spherical silicon powder, controlling the cooling temperature to be 400-500 ℃, and controlling the flow rate of the cooling gas to be 6-10 m/s;
step 6, collecting silicon powder with the particle size of 10-200nm by a collector, and further cooling to obtain silicon powder, wherein the cooling temperature is 80-150 ℃;
and 7, collecting the silicon powder formed by the collector through reverse blowing by a reverse blowing device and then by a material receiving hopper, wherein the reverse blowing pressure of the reverse blowing device is controlled to be 0.5-0.6 MPa.
Therefore, the preparation method obviously reduces the difficulty of the preparation process and effectively avoids environmental pollution by leading the raw materials to be protected by argon in a graphite crucible and then melted and evaporated under a plasma arc in a condenser so as to react in the condensation process and obtain the nano-silicon powder; meanwhile, the effect of effectively melting the raw materials is realized through the copper strips; the effect of effectively evaporating the raw materials is realized by controlling the voltage to be 140-160V.
Example one
A production method of plasma transferred arc silicon powder comprises the following steps:
step 1, taking a silicon material and a manganese material according to a molar ratio of 1:2, and filling the silicon material and the manganese material into a graphite crucible of a reactor, wherein a copper bar for an arc ignition electrode is inserted into the graphite crucible;
step 2, vacuumizing the reactor to be less than or equal to 10kPa, introducing argon, and controlling the pressure in the reactor to be 70kPa, wherein the argon is circularly connected with a collector through a draught fan;
step 3, igniting and arcing, burning the electric arc between the plasma gun and the manganese metal particles, controlling the current of the plasma gun to be 450A, keeping the current of the plasma gun and the temperature of the silicon material stable when the temperature of the silicon material in the graphite crucible is 1600 ℃, and continuing the step 4 after the silicon material and the manganese material are completely melted;
step 4, increasing the current of the plasma gun, controlling the current of the plasma gun to be 500A, and controlling the voltage to be 140V;
step 5, gradually evaporating the molten silicon material and the molten manganese material into corresponding particles, then feeding the particles into a condenser, introducing cooling gas into the condenser to crystallize and nucleate the evaporated silicon material and the evaporated manganese material and form spherical manganese silicide powder, controlling the cooling temperature to be 400 ℃, and controlling the flow velocity of the cooling gas to be 6 m/s;
step 6, collecting the manganese silicide powder with the particle size of 36nm by a collector, and further cooling to obtain the manganese silicide powder, wherein the cooling temperature is less than or equal to 80 ℃;
and 7, collecting the silicified high-pressure powder collected by the collector by a receiving hopper after the silicified high-pressure powder is reversely blown by a reverse blowing device, and controlling the reverse blowing pressure of the reverse blowing device to be 0.5 MPa.
Therefore, the preparation method obviously reduces the difficulty of the preparation process and effectively avoids environmental pollution by leading the silicon material and the manganese material to be protected by argon in the graphite crucible and then to be melted and evaporated under a plasma arc in a condenser so as to react in the condensation process and obtain nano-scale manganese silicide powder; meanwhile, the effect of effectively melting the silicon material and the manganese material is realized through the copper bar; the effect of effectively evaporating the silicon material and the manganese material is realized by controlling the voltage to be 140V.
Example two
A production method of plasma transferred arc silicon powder comprises the following steps:
step 1, taking a silicon material and a manganese material according to a molar ratio of 1:2, and filling the silicon material and the manganese material into a graphite crucible of a reactor, wherein a copper bar for an arc ignition electrode is inserted into the graphite crucible;
step 2, vacuumizing the reactor to be less than or equal to 10kPa, introducing argon, and controlling the pressure in the reactor to be 85kPa, wherein the argon is circularly connected with a collector through a draught fan;
step 3, igniting and arcing, burning the electric arc between the plasma gun and the metal manganese-silicon particles, controlling the current of the plasma gun to be 400A, keeping the current of the plasma gun and the temperature of the silicon material stable when the temperature of the silicon material in the graphite crucible is 1650 ℃, and continuing the step 4 after the silicon material and the manganese material are completely melted;
step 4, increasing the current of the plasma gun, controlling the current of the plasma gun to be 550A, and controlling the voltage to be 150V;
step 5, gradually evaporating the molten silicon material and the molten manganese material into corresponding particles, then feeding the particles into a condenser, introducing cooling gas into the condenser to crystallize and nucleate the evaporated silicon material and the evaporated manganese material and form spherical manganese silicide powder, controlling the cooling temperature to be 450 ℃ and the flow rate of the cooling gas to be 8 m/s;
step 6, collecting the manganese silicide powder with the particle size of 112nm by a collector, and further cooling to obtain the manganese silicide powder, wherein the cooling temperature is less than or equal to 110 ℃;
and 7, collecting the silicified high-pressure powder collected by the collector by a receiving hopper after the silicified high-pressure powder is reversely blown by a reverse blowing device, and controlling the reverse blowing pressure of the reverse blowing device to be 0.55 MPa.
Therefore, the preparation method obviously reduces the difficulty of the preparation process and effectively avoids environmental pollution by leading the silicon material and the manganese material to be protected by argon in the graphite crucible and then to be melted and evaporated under a plasma arc in a condenser so as to react in the condensation process and obtain nano-scale manganese silicide powder; meanwhile, the effect of effectively melting the silicon material and the manganese material is realized through the copper bar; the effect of effectively evaporating the silicon material and the manganese material is realized by controlling the voltage to be 150V.
EXAMPLE III
A production method of plasma transferred arc silicon powder comprises the following steps:
step 1, taking a silicon material and a manganese material according to a molar ratio of 1:2, and filling the silicon material and the manganese material into a graphite crucible of a reactor, wherein a copper bar for an arc ignition electrode is inserted into the graphite crucible;
step 2, vacuumizing the reactor to be less than or equal to 10kPa, introducing argon, and controlling the pressure in the reactor to be 100kPa, wherein the argon is circularly connected with a collector through a draught fan;
step 3, igniting and arcing, burning the electric arc between the plasma gun and the metal silicon particles, controlling the current of the plasma gun to be 480A, keeping the current of the plasma gun and the temperature of the silicon material stable when the temperature of the silicon material in the graphite crucible is 1700 ℃, and continuing the step 4 after the silicon material and the manganese material are completely melted;
step 4, increasing the current of the plasma gun, controlling the current of the plasma gun to be 600A, and controlling the voltage to be 160V;
step 5, gradually evaporating the molten silicon material and the molten manganese material into corresponding particles, then feeding the particles into a condenser, introducing cooling gas into the condenser to crystallize and nucleate the evaporated silicon material and the evaporated manganese material and form spherical manganese silicide powder, controlling the cooling temperature to be 500 ℃ and the flow rate of the cooling gas to be 10 m/s;
step 6, collecting the manganese silicide powder with the particle size of 172nm by a collector, and further cooling to obtain the manganese silicide powder, wherein the cooling temperature is less than or equal to 150 ℃;
and 7, collecting the silicified high-pressure powder collected by the collector by a receiving hopper after the silicified high-pressure powder is reversely blown by a reverse blowing device, and controlling the reverse blowing pressure of the reverse blowing device to be 0.6 MPa.
Example four
The difference between the fourth embodiment and the second embodiment is that the silicon powder in the fourth embodiment is manganese silicide powder, the raw materials are bulk silicon material and manganese material, and the cooling temperature adopted in the step 6 is 100-150 ℃.
EXAMPLE five
Example five differs from example four in that the cooling temperature used in step 6 was 130 ℃.
EXAMPLE six
The sixth example differs from the fourth example in that the cooling temperature used in step 6 is 150 ℃.
EXAMPLE seven
The seventh embodiment is different from the second embodiment in that the powder in the fourth embodiment is iron silicide powder, and the raw materials are 3N silicon material and pure iron material in a molar ratio of 2: 1.
Therefore, the preparation method has the effects of remarkably reducing the difficulty of the preparation process and effectively avoiding environmental pollution by protecting the silicon material, the silicon material and the manganese material as well as the silicon material and the pure iron material in the graphite crucible by argon gas, melting and evaporating the materials under plasma arc, and further reacting in a condenser in the condensation process to obtain corresponding nanoscale silicon powder, manganese silicide powder, iron silicide powder and the like; meanwhile, the effect of effectively melting the raw materials is realized through the copper strips; the effect of effectively evaporating the raw materials is realized by controlling the voltage to be 160V.
In conclusion, the nano silicon powder and the silicon powder are prepared by adopting a brand-new designed preparation method, firstly, the silicon material, the manganese material, the silicon material and the pure iron material are taken as raw materials, and argon is taken as protective gas, so that the effect of no waste water and waste gas emission in the production process is realized, and the safety of the production process is obviously improved; the obtained silicon powder is spherical, and has uniform particle size distribution, low impurity content and high purity; meanwhile, the problem that the traditional metallurgical method or physical preparation method cannot meet the requirement of the preparation of the transition metal silicide nano material is effectively solved, so that the preparation method has the effects of simple process, low production cost and suitability for continuous and stable quantitative production.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiment, but all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the present invention may occur to those skilled in the art without departing from the principle of the present invention, and such modifications and embellishments should also be considered as within the scope of the present invention.

Claims (9)

1. A production method of plasma transferred arc silicon powder is characterized by comprising the following steps:
step 1, filling raw materials into a graphite crucible (1) of a reactor (2);
step 2, vacuumizing the reactor (2) to be less than or equal to 10kPa, introducing argon, and controlling the pressure in the reactor (2) to be 70-100 kPa;
step 3, igniting and arcing, burning the electric arc between the plasma gun and the raw material, controlling the current of the plasma gun to be less than 500A, keeping the current of the plasma gun and the temperature of the raw material stable when the temperature of the raw material in the graphite crucible (1) is more than or equal to 1600 ℃, and continuing the step 4 after the raw material is completely melted;
step 4, increasing the current of the plasma gun, and controlling the current of the plasma gun to be 500-600A;
step 5, gradually evaporating the molten raw materials into corresponding particles, then feeding the particles into a condenser (3), introducing cooling gas into the condenser (3) to crystallize and nucleate the evaporated raw materials and form silicon powder, controlling the cooling temperature to be 400-500 ℃ and the flow rate of the cooling gas to be 6-10 m/s;
and step 6, collecting the silicon powder by the collector (4), and further cooling to obtain the silicon powder, wherein the cooling temperature is 80-150 ℃.
2. The method for producing the plasma transferred arc silicon powder according to claim 1, wherein the method comprises the following steps: in step 1, a copper strip is inserted into the graphite crucible (1), and the copper strip is used for an arc ignition electrode.
3. The method for producing the plasma transferred arc silicon powder according to claim 1, wherein the method comprises the following steps: in the step 2, the argon is circularly connected with the collector (4) through a draught fan.
4. The method for producing the plasma transferred arc silicon powder according to claim 1, wherein the method comprises the following steps: in step 4, the control voltage is 140-160V.
5. The method for producing the plasma transferred arc silicon powder according to claim 1, wherein the method comprises the following steps: in step 6, the particle size of the silicon powder is 10-200 nm.
6. The method for producing the plasma transferred arc silicon powder according to claim 1, wherein the method comprises the following steps: in the step 6, the silicon powder collected and formed by the collector (4) is collected by the powder collector after being reversely blown by the back blowing device.
7. The method for producing plasma transferred arc silicon powder according to claim 6, wherein the method comprises the following steps: the back-blowing pressure of the back-blowing device is controlled to be 0.5-0.6 MPa.
8. The method for producing the plasma transferred arc silicon powder according to claim 1, wherein the method comprises the following steps: the silicon powder is spherical.
9. The method for producing the plasma transferred arc silicon powder according to claim 1, wherein the method comprises the following steps: the silicon powder is silicon powder, iron silicide powder or manganese silicide powder.
CN202011352489.0A 2020-11-26 2020-11-26 Production method of plasma transferred arc silicon powder Pending CN112551530A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101086040A (en) * 2006-06-06 2007-12-12 北京大学 Method for preparing high capacity lithium ion cells cathode material
CN102951643A (en) * 2012-10-15 2013-03-06 宁波广博纳米新材料股份有限公司 Production method of nano-grade spherical silica powder
CN106185947A (en) * 2016-07-21 2016-12-07 中国有色桂林矿产地质研究院有限公司 A kind of preparation method of nano silica fume
CN106698437A (en) * 2017-01-03 2017-05-24 昆明理工大学 Method for preparing spherical nanometer silicon by virtue of thermal plasma method
CN108063242A (en) * 2017-12-11 2018-05-22 中国科学院过程工程研究所 A kind of silicon-base alloy material and its preparation method and application

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101086040A (en) * 2006-06-06 2007-12-12 北京大学 Method for preparing high capacity lithium ion cells cathode material
CN102951643A (en) * 2012-10-15 2013-03-06 宁波广博纳米新材料股份有限公司 Production method of nano-grade spherical silica powder
CN106185947A (en) * 2016-07-21 2016-12-07 中国有色桂林矿产地质研究院有限公司 A kind of preparation method of nano silica fume
CN106698437A (en) * 2017-01-03 2017-05-24 昆明理工大学 Method for preparing spherical nanometer silicon by virtue of thermal plasma method
CN108063242A (en) * 2017-12-11 2018-05-22 中国科学院过程工程研究所 A kind of silicon-base alloy material and its preparation method and application

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
候志敏等人: "《焊接技术与设备》", 31 July 2016, 西安交通大学出版社 *

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