CN112542371A - Surface dustproof treatment method for semiconductor substrate - Google Patents

Surface dustproof treatment method for semiconductor substrate Download PDF

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CN112542371A
CN112542371A CN201910893324.5A CN201910893324A CN112542371A CN 112542371 A CN112542371 A CN 112542371A CN 201910893324 A CN201910893324 A CN 201910893324A CN 112542371 A CN112542371 A CN 112542371A
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semiconductor substrate
depositing
cleaning
ion beam
vapor
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宿志影
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SAE Technologies Development Dongguan Co Ltd
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SAE Technologies Development Dongguan Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields

Abstract

The invention provides a surface dustproof treatment method of a semiconductor substrate, which comprises the following steps: (1) pre-cleaning the semiconductor substrate by using an organic solvent and then air-drying; (2) adopting ion beam etching to clean the semiconductor substrate treated in the step (1) in an inert gas atmosphere; (3) depositing a silicon layer on the semiconductor substrate treated in the step (2); (4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, and the bias voltage range is from minus 70V to minus 120V; (5) and (4) vapor depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4). The method of the invention changes the surface bearing condition of the semiconductor substrate, well improves the surface cleanliness of the semiconductor substrate, and well avoids the damage of electrostatic discharge to the semiconductor caused by the poor surface cleanliness of the semiconductor substrate.

Description

Surface dustproof treatment method for semiconductor substrate
Technical Field
The invention belongs to the technical field of semiconductor preparation processes, and particularly relates to a surface dustproof treatment method of a semiconductor substrate.
Background
The semiconductor substrate is used for bearing the semiconductor, the cleaning degree of the surface of the semiconductor substrate influences the performance of the semiconductor, and dust floating on the surface can generate secondary pollution on the semiconductor to cause the damage of the semiconductor. Generally, the surface of the semiconductor substrate is cleaned mainly by washing, but the cleaning effect is not satisfactory.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a surface dustproof treatment method for a semiconductor substrate.
In order to achieve the purpose, the invention adopts the technical scheme that: a surface dust-proofing treatment method of a semiconductor substrate, the method comprising the steps of:
(1) pre-cleaning the semiconductor substrate by using an organic solvent and then air-drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ion Beam (Ion Beam Etching) in an inert gas atmosphere;
(3) depositing a silicon layer on the semiconductor substrate treated in the step (2);
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration Vacuum cathode Arc method (Filtered Cathodic Arc method), wherein in the deposition process, a bias voltage is applied to an anode, and the bias voltage ranges from minus 70V to minus 120V;
(5) and (4) vapor depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4).
According to the surface dustproof treatment method of the semiconductor substrate, after the semiconductor substrate is cleaned by sequentially using an organic solvent and ion beam etching, a silicon layer, a diamond-like film and a fluorine layer are sequentially deposited on the surface of the semiconductor substrate, and the above modes are ingeniously combined, so that the surface bearing condition of the semiconductor substrate is changed, the surface cleanliness of the semiconductor substrate is well improved, and the damage of electrostatic discharge (ESD) to a semiconductor caused by poor surface cleanliness of the semiconductor substrate is well avoided; the silicon layer deposited in the step (3) of the method is beneficial to improving the bonding performance of the semiconductor substrate and the diamond-like carbon film; in the step (4), a bias voltage is applied to the anode, wherein the bias voltage range is from minus 70V to minus 120V, so that a uniform and compact diamond-like film layer can be obtained on the surface of the semiconductor substrate, the content of sp3 in the diamond-like film can be increased, and the hardness of the diamond-like film can be further increased; the fluorine layer is deposited on the diamond-like film in the step (5) of the method, so that the hydrophobic and oleophobic properties of the surface of the semiconductor substrate are improved, the adhesion of dust on the surface of the semiconductor substrate is better avoided, and the cleanliness of the surface of the semiconductor substrate is improved.
Preferably, in the step (5), Radio Frequency chemical vapor deposition (Radio Frequency) is adoptedChemical Vapor Deposition) method, wherein the gas for Vapor Deposition of the fluorine layer is CF4，CF4The flow rate of the gas phase deposition is 60sccm-100sccm, and the processing time of the gas phase deposition fluorine layer is 12min-18 min.
Under the vapor deposition fluorine layer parameters, the roughness of the surface of the semiconductor substrate can be better improved, thereby avoiding the accumulation of dust on the surface of the semiconductor substrate and improving the cleanliness of the surface of the semiconductor substrate.
Preferably, in the step (5), CF4The flow rate of (b) is 70sccm to 90 sccm.
Under the vapor deposition fluorine layer parameters, the cleanliness of the surface of the semiconductor substrate can be better improved, and the cost is saved.
Preferably, in the step (5), CF4The flow rate of (1) is 70sccm to 80sccm, and the treatment time for vapor-depositing a fluorine layer is 15 min.
Under the vapor deposition fluorine layer parameters, the cleanliness of the surface of the semiconductor substrate can be better improved, and the cost is saved.
Preferably, in the step (3), the method for depositing the silicon layer is a Magnetron sputtering Deposition (Magnetron sputtering Deposition) method, the target used in the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of silicon in the Magnetron sputtering Deposition method is
Figure BDA0002209457320000021
Preferably, in the step (3), the deposition rate of silicon in the magnetron sputtering deposition method is
Figure BDA0002209457320000022
The deposited silicon layer was 10 angstroms thick.
Preferably, in the step (2), the ion beam etching cleaning adopts Ar ion beams to perform the ion beam etching cleaning, and the incident angle of the Ar ion beams in the ion beam etching cleaning process is 30 ° to 45 °.
Preferably, in the step (2), the rotation speed of the semiconductor substrate in the ion beam etching cleaning process is 30r/s, and the ion beam etching cleaning rate is
Figure BDA0002209457320000031
Preferably, in the step (1), the organic solvent is isopropanol, the pre-cleaning mode is ultrasonic pre-cleaning, and the pre-cleaning time is 20 minutes.
Preferably, in the step (2), the inert gas is argon.
Preferably, in the step (4), the target material of the magnetic filtration vacuum cathode arc method is high-purity graphite, and the method has the beneficial effects that: the invention provides a surface dustproof treatment method of a semiconductor substrate, which comprises the steps of cleaning the semiconductor substrate by sequentially using an organic solvent and ion beam etching, and then sequentially depositing a silicon layer, a diamond-like film and a fluorine layer on the surface of the semiconductor substrate.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.
Example 1
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000032
(3) In thatDepositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used in the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000041
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 80sccm, and the treatment time for vapor-depositing a fluorine layer was 15 min.
Example 2
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000042
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000043
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 60sccm, and the treatment time for vapor-depositing a fluorine layer was 15 min.
Example 3
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000051
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000052
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4At a flow rate of 70sccm, vapor depositionThe treatment time for the fluorine layer was 15 min.
Example 4
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000053
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000054
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 90sccm, and the treatment time for vapor-depositing a fluorine layer was 15 min.
Example 5
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning by adopting Ar ion beams under argon gas atmosphereThe semiconductor substrate processed in the step (1) has the rotating speed of 30r/s when the incidence angle of Ar ion beams is 30-45 degrees and the ion beam etching cleaning speed is 30r/s in the ion beam etching cleaning process
Figure BDA0002209457320000061
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000062
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 100sccm, and the treatment time for vapor-depositing a fluorine layer was 15 min.
Example 6
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000063
(3) Adopting Magnetron sputtering deposition (Magnetron Sput) on the semiconductor substrate processed in the step (2)ter Deposition) silicon layer, the target material used in the magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000064
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 60sccm, and the treatment time for vapor-depositing a fluorine layer was 12 min.
Example 7
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000071
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000072
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 70sccm, and the treatment time for vapor-depositing a fluorine layer was 12 min.
Example 8
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000073
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000081
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 80sccm, and the treatment time for vapor-depositing a fluorine layer was 12 min.
Example 9
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000082
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000083
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 90sccm, and the treatment time for vapor-depositing a fluorine layer was 12 min.
Example 10
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) and (2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in the argon gas atmosphere, wherein Ar ions are generated in the ion beam etching and cleaning processThe rotation speed of the semiconductor substrate with the beam incidence angle of 30-45 degrees is 30r/s, and the ion beam etching cleaning rate is
Figure BDA0002209457320000091
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000092
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 100sccm, and the treatment time for vapor-depositing a fluorine layer was 12 min.
Example 11
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000093
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein a target material used by the Magnetron sputtering Deposition method is high-purity siliconThe deposition rate of silicon is
Figure BDA0002209457320000094
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 60sccm, and the treatment time for vapor-depositing a fluorine layer was 18 min.
Example 12
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000101
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000102
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 70sccm, and the treatment time for vapor-depositing a fluorine layer was 18 min.
Example 13
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000103
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000104
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 80sccm, and the treatment time for vapor-depositing a fluorine layer was 18 min.
Example 14
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000111
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000112
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 90sccm, and the treatment time for vapor-depositing a fluorine layer was 18 min.
Example 15
The surface dust-proof treatment method of the semiconductor substrate as an embodiment of the invention comprises the following steps:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the incident angle of the Ar ion beams in the ion beam etching and cleaning process is 30-45 degrees, the rotating speed of the semiconductor substrate is 30r/s, and the ion beams are etchedThe etching cleaning rate is
Figure BDA0002209457320000113
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000121
The thickness of the deposited silicon layer is 10 angstroms;
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and a target material of the magnetic filtration vacuum cathode arc method is high-purity graphite;
(5) vapor-depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4), wherein the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of (2) was 100sccm, and the treatment time for vapor-depositing a fluorine layer was 18 min.
Comparative example 1
A surface dust-proofing treatment method of a semiconductor substrate as a comparative example of the present invention, comprising the steps of:
(1) carrying out ultrasonic pre-cleaning on the semiconductor substrate by using isopropanol for 20 minutes, and then naturally drying;
(2) etching and cleaning the semiconductor substrate treated in the step (1) by adopting Ar ion beams in an argon gas atmosphere, wherein the rotating speed of the semiconductor substrate with the incidence angle of the Ar ion beams of 30-45 degrees in the ion beam etching and cleaning process is 30r/s, and the ion beam etching and cleaning speed is
Figure BDA0002209457320000122
(3) Depositing a silicon layer on the semiconductor substrate treated in the step (2) by adopting Magnetron sputtering, wherein the target material used by the Magnetron sputtering Deposition method is high-purity silicon, and the Deposition rate of the silicon is
Figure BDA0002209457320000123
The thickness of the deposited silicon layer is 10 angstroms;
(4) and (3) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, the bias voltage range is from minus 70V to minus 120V, and the target material of the magnetic filtration vacuum cathode arc method is high-purity graphite.
Effect example 1
The results of measuring the roughness and cleanliness of the surface of the semiconductor substrate after the surface of the semiconductor substrate was treated by the methods of example 1 and comparative example 1, measuring the roughness by using a KEYENCE mohs surface roughness measuring instrument, measuring the cleanliness by using an LD-3C microcomputer laser dust meter, obtaining the amount of fine dust particles per unit area of the semiconductor substrate, and counting the rate of damage of the semiconductor substrate due to electrostatic discharge (ESD) during the application process after the surface of the semiconductor substrate was treated by the two methods are shown in table 1.
Table 1 effect of treating surface of semiconductor substrate by the method of example 1 and comparative example 1
Example 1 Comparative example 1
Roughness of Ra0.5 Ra0.8-Ra1.0
Ratio of ESD damaged semiconductor 0.005％-0.01％ 0.03％
Cleanliness 0-1 grains/square centimeter 8-10 grains/square centimeter
Comparing the effects of the methods of example 1 and comparative example 1 on the surface of the semiconductor substrate, it was found that the combination of the treatment effects of step (1) to step (4) of the method of example 1 and step (5) results in better improvement of the roughness of the semiconductor surface, better improvement of the degree of cleaning of the surface of the semiconductor substrate, and reduction of the rate of electrostatic discharge (ESD) damage to the semiconductor.
The results of measuring the roughness of the surface of the semiconductor substrate after the surface of the semiconductor substrate was treated by the methods of examples 1 to 15 are shown in table 2.
Table 2 effects of treating the surface of a semiconductor substrate by the methods of examples 1 to 15
Figure BDA0002209457320000131
Figure BDA0002209457320000141
From the results of comparative example 1 to example 15, it was found that CF4When the flow rate of (1) is 70-90 sccm, the effect is better, the cost is comprehensively considered, and CF is found4The flow rate of (1) is 80sccm and the processing time of the vapor deposition fluorine layer is 15min, the effect of improving the roughness and cleanliness of the surface of the semiconductor substrate is optimal and the cost is minimized.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims (10)

1. A surface dust-proof treatment method of a semiconductor substrate is characterized by comprising the following steps:
(1) pre-cleaning the semiconductor substrate by using an organic solvent and then air-drying;
(2) adopting ion beam etching to clean the semiconductor substrate treated in the step (1) in an inert gas atmosphere;
(3) depositing a silicon layer on the semiconductor substrate treated in the step (2);
(4) depositing a diamond-like film on the silicon layer of the semiconductor substrate treated in the step (3) by using a magnetic filtration vacuum cathode arc method, wherein in the deposition process, a bias voltage is applied to an anode, and the bias voltage range is from minus 70V to minus 120V;
(5) and (4) vapor depositing a fluorine layer on the diamond-like carbon film of the semiconductor substrate treated in the step (4).
2. The process according to claim 1, wherein in the step (5), the fluorine layer is vapor-deposited by RF CVD, and the gas for vapor-depositing the fluorine layer is CF4，CF4The flow rate of the gas phase deposition is 60sccm-100sccm, and the processing time of the gas phase deposition fluorine layer is 12min-18 min.
3. The process of claim 2, wherein in step (5), CF4The flow rate of (b) is 70sccm to 90 sccm.
4. The process of claim 2, wherein in step (5), CF4The flow rate of (1) is 70sccm to 80sccm, and the treatment time for vapor-depositing a fluorine layer is 15 min.
5. The process of claim 1, wherein in the step (3), the method for depositing the silicon layer is a magnetron sputtering deposition method, and the magnetron sputtering deposition method is a magnetron sputtering deposition methodThe target material is high-purity silicon, and the deposition rate of the silicon in the magnetron sputtering deposition method is
Figure FDA0002209457310000011
6. The process of claim 5, wherein in step (3), the deposition rate of silicon in the magnetron sputtering deposition method is
Figure FDA0002209457310000012
The deposited silicon layer was 10 angstroms thick.
7. The processing method according to claim 1, wherein in the step (2), the ion beam etching cleaning is performed by using an Ar ion beam, and an incident angle of the Ar ion beam in the ion beam etching cleaning process is 30 ° to 45 °.
8. The processing method according to claim 7, wherein in the step (2), the rotation speed of the semiconductor substrate during the ion beam etching cleaning process is 30r/s, and the ion beam etching cleaning rate is
Figure FDA0002209457310000021
The inert gas is argon.
9. The treatment method according to claim 1, wherein in the step (1), the organic solvent is isopropanol, the pre-cleaning mode is ultrasonic pre-cleaning, and the pre-cleaning time is 20 minutes.
10. The process according to claim 1, wherein in the step (4), the target material for the magnetic filtration vacuum cathodic arc method is high-purity graphite.
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