CN112540100A - Micro-welding-point heat transfer device based on Peltier effect and testing method thereof - Google Patents

Abstract

The invention discloses a micro-welding spot heat transfer device based on Peltier effect and a testing method thereof.A heating structure and a cooling structure are used for supporting a sample, the device is subjected to heat transfer test after being electrified, and finite element electric-thermal coupling analysis is used after corresponding temperature is recorded, so that the temperature gradient of a welding spot of the sample can be obtained, and reliable and stable micro-welding spot heat transfer data can be obtained; changing the temperature difference of the cold end and the hot end of the loading current control welding spot according to the Peltier effect to obtain a larger temperature gradient; different temperature gradients can be obtained by controlling the height of the welding spot; simultaneously, the reinforcing plate component is externally used for clamping and fixing, the structure is simple, and the technical problems that the structure of a heat transfer device in the prior art is complex and the temperature gradient is difficult to control are solved.

Description

Micro-welding-point heat transfer device based on Peltier effect and testing method thereof

Technical Field

The invention relates to the technical field of electronic packaging, in particular to a micro-welding-point thermomigration device based on a Peltier effect and a testing method thereof.

Background

As electronic packaging systems continue to move toward miniaturization, high performance, and high reliability, the increasing number of transistors and the continuing reduction in solder joint size have made the impact of the thermomigration problem increasingly more pronounced on solder joint reliability. The thermal migration refers to a phenomenon that atoms are directionally migrated under the driving of a temperature gradient when a temperature difference exists. In electronic packaging systems, the main reasons for the temperature gradient across the solder joints include: 1) when the electronic product works, the joule heat generated by the transistor at the chip side is larger than that generated by the substrate, so that a temperature gradient is formed at two ends of the welding spot; 2) because the resistivity and the size of each part of the material are different, the distribution of the Joule heat generated by the chip during working is not uniform, and temperature gradients are formed at two ends of a welding spot; 3) when the current density passes through the welding spot, the current density is unevenly distributed due to the influence of structural factors and the like, so that the distribution of joule heat is uneven, and a large temperature gradient is formed on two sides of the welding spot. Studies have demonstrated that thermomigration can cause voids in the hot end of the solder joint, leading to solder joint failure.

In the research related to the problem of solder joint thermal migration failure, researchers have been concerned about how to obtain a high and stable temperature gradient and perform a thermal migration test. At present, some researchers adopt a method of performing water cooling on one end of a welding point and not performing any treatment on the other end of the welding point, so that a certain temperature gradient is formed. However, the water-cooling structure is complex to manufacture and large in volume, and the formed temperature gradient is not easy to control. Also, researchers have used ceramic heating plates for heating, and used thermocouples to monitor the temperature of the ceramic heating plates and feed the temperature back to a temperature controller, and the temperature controller controls the temperature of the ceramic heating plates according to the feedback temperature to form a temperature difference. However, the temperature difference between the two ends of the welding spot generated by the method is small, and the formed temperature gradient is small. In addition, existing thermomigration devices typically include: heating structure, lower heat-conducting plate, sample, go up heat-conducting plate and cooling structure, these thermophoresis device often have certain drawback: 1) the heating mechanism and the cooling mechanism have larger volumes and more complex structures, so that the volume of the heat transfer device is increased; 2) the position between the heating structure and the cooling structure for placing the sample is not well adjusted, and the device is not suitable for other welding spot heights after being installed; 3) the heat transfer device is inconvenient to be fixedly installed, and the device is not fixed, so that the influences of inaccurate positioning, inconvenient use and the like are easily caused.

The Peltier Effect (Peltier Effect) means that when a current passes through a loop composed of different conductors, heat absorption and heat release phenomena occur at the joints of the different conductors along with the difference of the current direction, in addition to irreversible joule heat generation. According to the Peltier effect, when current is applied to the conductor, a temperature difference is generated between two ends of the conductor, so that a temperature gradient is formed between two ends of the welding point. The temperature gradient at two ends of the welding point is obtained by utilizing the Peltier effect, so that a heating or cooling structure with larger volume can be avoided.

Disclosure of Invention

The invention aims to provide a micro-welding-point heat transfer device based on the Peltier effect and a testing method thereof, and aims to solve the technical problems that the heat transfer device in the prior art is complex in structure and difficult in temperature gradient control.

In order to achieve the above object, the invention adopts a micro-welding spot heat transfer device based on the peltier effect, which comprises a heating structure, a cooling structure, a test sample and a reinforcing plate assembly, wherein the heating structure and the cooling structure are arranged up and down, the heating structure is positioned below the cooling structure, the test sample is arranged between the heating structure and the cooling structure, and the reinforcing plate assembly clamps the heating structure and the cooling structure from the upper side and the lower side respectively;

the reinforcing plate assembly comprises a first metal plate, a second metal plate and four groups of connecting bolts, the first metal plate and the second metal plate are arranged oppositely, the first metal plate is abutted to the heating structure, the second metal plate is abutted to the cooling structure, the four groups of connecting bolts respectively penetrate through the first metal plate and the second metal plate and are movably connected, and each group of connecting bolts is provided with adaptive nuts.

The heating structure comprises a first heating substrate, a second heating substrate, a third heating substrate, a plurality of heating plate P-type semiconductors and a plurality of heating plate N-type semiconductors, wherein the first heating substrate, the second heating substrate and the third heating substrate are arranged in a pairwise opposite mode, the first heating substrate is located above the second heating substrate, the third heating substrate is located below the second heating substrate, gaps from the second heating substrate to the first heating substrate and the third heating substrate are equal, the heating plate P-type semiconductors and the heating plate N-type semiconductors are arranged in the gaps, the number of the heating plate P-type semiconductors and the heating plate N-type semiconductors in the gaps is matched, and heating plate copper wiring is arranged between each pair of the heating plate P-type semiconductors and the heating plate N-type semiconductors.

The refrigerating structure comprises a first refrigerating substrate, a second refrigerating substrate, a third refrigerating substrate, a plurality of refrigerating plate P-type semiconductors and a plurality of refrigerating plate N-type semiconductors, wherein the first refrigerating substrate, the second refrigerating substrate and the third refrigerating substrate are arranged in a pairwise opposite mode, the first refrigerating substrate is located below the second refrigerating substrate, the third refrigerating substrate is located above the second refrigerating substrate, gaps from the second refrigerating substrate to the first refrigerating substrate and the third refrigerating substrate are equal, the refrigerating plate P-type semiconductors and the refrigerating plate N-type semiconductors are arranged in the gaps, the number of the refrigerating plate P-type semiconductors and the refrigerating plate N-type semiconductors in the gaps is matched, and copper wiring of the refrigerating plate is arranged between each pair of the refrigerating plate P-type semiconductors and the refrigerating plate N-type semiconductors.

The sample comprises a first PCB, a second PCB and a plurality of welding spots, the first PCB and the second PCB are arranged oppositely, the welding spots are arranged between the first PCB and the second PCB, the welding spots are arranged in an array mode, copper wiring is arranged on the first PCB and the second PCB, and the welding spots are connected through the copper wiring to form a conducting loop.

Wherein, the heating structure is connected with the refrigerating structure by a lead, and the sizes of the heating structure and the refrigerating structure are matched.

The contact surface of the first heating substrate and the first metal plate is coated with heat-conducting silicone grease, the contact surface of the third refrigerating substrate and the second metal plate is coated with heat-conducting silicone grease, and the contact surfaces of the sample, the heating structure and the refrigerating structure are coated with heat-conducting silicone grease.

The invention also provides a testing method of the micro-welding point thermomigration device based on the Peltier effect, which comprises the following steps:

the method comprises the following steps: horizontally placing the first metal plate, and placing the heating structure on the first metal plate;

step two: placing the sample on the pyrogenic structure;

step three: placing the cryogenic structure over the test specimen with the cryogenic structure and the heating structure in overlying alignment;

step four: placing the second metal plate over the refrigeration structure;

step five: connecting the first metal plate and the second metal plate by using four groups of connecting bolts, and screwing nuts;

step six: connecting the positive electrode and the negative electrode of a power supply through the copper wiring of the heating plate, connecting the positive electrode and the negative electrode with a pair of P-type semiconductors of the heating plate and N-type semiconductors of the heating plate in the heating structure, and connecting direct current;

step seven: starting a thermal migration test, and testing the temperatures of the third heating substrate and the first uniform cooling substrate by adopting a thermocouple thermodetector;

step eight: carrying out simulation by adopting finite element software; the temperature obtained by testing is used as the boundary condition of the sample welding spot, and the temperature gradient of the sample welding spot can be obtained through finite element electrothermal coupling analysis, so that reliable and stable micro-welding spot heat transfer data can be obtained.

According to the micro-welding-point heat transfer device based on the Peltier effect and the testing method thereof, the heating structure and the cooling structure are used for supporting the sample, heat transfer testing is carried out after the device is powered on, finite element electric-thermal coupling analysis is used after corresponding temperature is recorded, the temperature gradient of a welding point of the sample can be obtained, and reliable and stable micro-welding-point heat transfer data can be obtained; changing the temperature difference of the cold end and the hot end of the loading current control welding spot according to the Peltier effect to obtain a larger temperature gradient; different temperature gradients can be obtained by controlling the height of the welding spot; simultaneously, the external use is realized, the reinforced plate component is clamped and fixed, the structure is simple, and the technical problems that the structure is complex and the temperature gradient is difficult to control in the prior art are solved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a micro-solder-point thermomigration device based on the peltier effect.

Fig. 2 is a schematic structural view of a second metal plate of the present invention.

Fig. 3 is a schematic view of a first thermal substrate of the thermal structure of the present invention.

Fig. 4 is a top view of a second heating substrate of the heating structure of the present invention.

Fig. 5 is a bottom view of a second heat-generating substrate of the heat-generating structure of the present invention.

Fig. 6 is a schematic structural view of a third heat-generating substrate of the heat-generating structure of the present invention.

Fig. 7 is a schematic view of a first cooling substrate of the cooling structure of the present invention.

Fig. 8 is a top view of a second refrigeration base plate of the refrigeration structure of the present invention.

Fig. 9 is a bottom view of a second refrigeration base plate of the refrigeration structure of the present invention.

Fig. 10 is a schematic view of a third refrigerant substrate of the refrigerant structure of the present invention.

FIG. 11 is a schematic view of a sample of the present invention when current is applied.

FIG. 12 is a flow chart of the steps of the testing method of the present invention.

1-a heating structure, 11-a first heating substrate, 12-a second heating substrate, 13-a third heating substrate, 14-a heating panel P-type semiconductor, 15-a heating panel copper wiring, 16-a heating panel N-type semiconductor, 2-a refrigerating structure, 21-a first refrigerating substrate, 22-a second refrigerating substrate, 23-a third refrigerating substrate, 24-a refrigerating panel P-type semiconductor, 25-a refrigerating panel copper wiring, 26-refrigerating plate N-type semiconductor, 3-sample, 31-first PCB, 32-second PCB, 33-copper wiring, 34-welding point, 4-lead, 5-second metal plate, 6-heat-conducting silicone grease, 70-connecting bolt, 71-nut, 72-bolt hole and 8-first metal plate.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.

In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention. Further, in the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

Referring to fig. 1 to 11, the invention provides a micro-welding spot thermomigration device based on the peltier effect, which comprises a heating structure 1, a cooling structure 2, a test sample 3 and a reinforcing plate assembly, wherein the heating structure 1 and the cooling structure 2 are arranged up and down, the heating structure 1 is positioned below the cooling structure 2, the test sample 3 is arranged between the heating structure 1 and the cooling structure 2, and the reinforcing plate assembly clamps the heating structure 1 and the cooling structure 2 from the upper side and the lower side respectively;

the reinforcing plate assembly comprises a first metal plate 8, a second metal plate 5 and four groups of connecting bolts 70, wherein the first metal plate 8 and the second metal plate 5 are arranged oppositely, the first metal plate 8 is abutted to the heating structure 1, the second metal plate 5 is abutted to the refrigerating structure 2, the four groups of connecting bolts 70 respectively penetrate through the first metal plate 8 and the second metal plate 5 and are movably connected, and each group of connecting bolts 70 is provided with adaptive nuts 71.

In the present embodiment, the micro-welding point heat transfer device based on the peltier effect is composed of four parts, the test piece 3 is positioned at the center, the lower part of the test piece 3 is contacted with the heating structure 1, the upper part of the test piece 3 is contacted with the cooling structure 2, and the reinforcing plate component clamps the thermal structure 1 and the cooling structure 2 from the outer side to form a whole;

the first metal plate 8 and the second metal plate 5 are made of pure copper, and the sizes of the pure copper are 60mm multiplied by 40mm multiplied by 2 mm; four sets of the connecting bolts 70 penetrate through the bolt holes 72 of the first metal plate 8 and the second metal plate 5, the distance between the heating structure 1 and the cooling structure 2 can be adjusted by screwing or loosening the nuts 71, the test samples 3 with different heights can be subjected to heat transfer tests, and the connecting bolts 70 also adopt copper bolts with heat conductivity, and the copper bolts can play a role in positioning and also contribute to heat conductivity.

Further, the heating structure 1 comprises a first heating substrate 11, a second heating substrate 12, a third heating substrate 13, a plurality of heating plate P-type semiconductors 14 and a plurality of heating plate N-type semiconductors 16, the first heating substrate 11, the second heating substrate 12 and the third heating substrate 13 are arranged oppositely in pairs, the first heating substrate 11 is located above the second heating substrate 12, the third heating substrate 13 is located below the second heating substrate 12, the gap from the second heating substrate 12 to the first heating substrate 11 and the third heating substrate 13 is equal, the heating plate P-type semiconductor 14 and the heating plate N-type semiconductor 16 are arranged in a gap in which the numbers of the heating plate P-type semiconductor 14 and the heating plate N-type semiconductor 16 are adapted, and a heating plate copper wiring 15 is provided between each pair of the heating plate P-type semiconductor 14 and the heating plate N-type semiconductor 16.

In this embodiment, a plurality of pairs of the heating plate P-type semiconductor 14 and the heating plate N-type semiconductor 16 are disposed in a gap between the first heating substrate 11, the second heating substrate 12 and the third heating substrate 13, the heating plate P-type semiconductor 14, the heating plate N-type semiconductor 16 and the heating plate copper wiring 15 form a pair of heating plate thermocouples, a current direction of the heating plate thermocouples flows from the heating plate P-type semiconductor 14 to the heating plate N-type semiconductor 16, a lower end of the heating structure 1 absorbs heat, and an upper end thereof dissipates heat to form a hot end; a plurality of pairs of heating plate thermocouples are overlapped to form an array, so that the temperature of the heating structure 1 is increased, and a larger temperature difference value is obtained.

Further, the refrigeration structure 2 comprises a first refrigeration substrate 21, a second refrigeration substrate 22, a third refrigeration substrate 23, a plurality of refrigeration plate P-type semiconductors 24 and a plurality of refrigeration plate N-type semiconductors 26, the first refrigeration substrate 21, the second refrigeration substrate 22 and the third refrigeration substrate 23 are arranged opposite to each other, the first refrigeration substrate 21 is positioned below the second refrigeration substrate 22, the third refrigeration substrate 23 is positioned above the second refrigeration substrate 22, the gaps from the second refrigerant substrate 22 to the first refrigerant substrate 21 and the third refrigerant substrate 23 are equal, the refrigerating board P-type semiconductors 24 and the refrigerating board N-type semiconductors 26 are arranged in gaps, the number of the refrigerating board P-type semiconductors 24 and the refrigerating board N-type semiconductors 26 in the gaps is matched, and a refrigerating board copper wiring 25 is arranged between each pair of the refrigerating board P-type semiconductors 24 and the refrigerating board N-type semiconductors 26.

In the present embodiment, a plurality of pairs of the cooling plate P-type semiconductors 24 and the cooling plate N-type semiconductors 26 are disposed in the gap between the first cooling substrate 21, the second cooling substrate 22 and the third cooling substrate 23, the cooling plate P-type semiconductors 24, the cooling plate N-type semiconductors 26 and the cooling plate copper wirings 25 constitute a pair of cooling plate thermocouples, the direction of current of the cooling plate thermocouples is from the cooling plate P-type semiconductors 24 to the cooling plate N-type semiconductors 26, the upper end of the cooling structure 2 dissipates heat, and the lower end absorbs heat to form a cold end; the array is formed by overlapping a plurality of pairs of thermocouples of the refrigerating plate, so that the temperature of the refrigerating structure 2 is reduced to be lower, and a larger temperature difference value is obtained.

Further, the temperature difference of the cold end and the hot end can be increased through the thermocouple array of the two or more stacked heating plates or cooling plates, the temperature difference delta T between the two ends of the sample 3 can reach 68-95 ℃, and the temperature difference delta T is calculated according to a temperature gradient formula: the temperature gradient across the sample 3 can be calculated by Δ T/h (where h is the thickness of the sample 3).

Furthermore, the materials of the P-type semiconductor and the N-type semiconductor are ternary solid solution alloys based on bismuth telluride (Bi2Te 3); preferably, the material of the P-type semiconductor is Bi2Te3-Sb2Te 3; the material of the N-type semiconductor is Bi2Te3-Bi2Se 3.

Further, the test sample 3 comprises a first PCB 31, a second PCB 32 and a plurality of welding spots 34, wherein the first PCB 31 and the second PCB 32 are oppositely arranged, the welding spots 34 are arranged between the first PCB 31 and the second PCB 32, the welding spots 34 are arranged in an array mode, copper wiring 33 is arranged on the first PCB 31 and the second PCB 32, and the welding spots 34 are connected through the copper wiring 33 to form a conductive loop.

In this embodiment, the first PCB 31 and the second PCB 32 have the same size, the first PCB 31 and the second PCB 32 are disposed in an overlapping manner, the first PCB 31 is located above the second PCB 32, a plurality of solder points 34 are arrayed between the first PCB 31 and the second PCB 32, and the solder of the solder points 34 is a lead-containing solder or a lead-free solder in a binary alloy or a multi-component alloy, so as to detect the thermal migration performance of different micro solder points. The first PCB 31, the second PCB 32, the welding spots 34 and the copper wiring 33 are connected to form a current loop, the test sample 3 can be selectively powered on or not powered on, and after the test sample 3 is powered on, a micro-welding spot electro-migration test can be carried out, so that the influence of current load on micro-welding spot thermo-migration is evaluated.

Further, the heating structure 1 and the cooling structure 2 are connected by a wire 4.

In the present embodiment, the lead 4 completes the circuit between the heating structure 1 and the cooling structure 2, a closed loop is formed in the micro-welding point thermomigration device based on the peltier effect, when direct current is connected, power flows in from the positive electrode, passes through the thermocouple array of each layer, and then flows out from the negative electrode; the heating structure 1 and the cooling structure 2 are adaptive in size and consistent in size, are correspondingly arranged in structure, are concise in design and are easy to install.

Further, a contact surface of the first heating substrate 11 and the first metal plate 8 is coated with heat-conducting silicone grease 6, a contact surface of the third refrigerating substrate 23 and the second metal plate 5 is coated with heat-conducting silicone grease 6, and contact surfaces of the sample 3, the heating structure 1 and the refrigerating structure 2 are coated with heat-conducting silicone grease 6.

In the embodiment, the contact surface is coated with a layer of heat-conducting silicone grease 6, so that good heat transfer contact is ensured, heat loss is reduced, accuracy in measuring the temperatures of the heating structure 1 and the cooling structure 2 is ensured, and accuracy of analysis data is ensured.

Further, the first heating substrate 11, the second heating substrate 12, the third heating substrate 13, the first cooling substrate 21, the second cooling substrate 22, and the third cooling substrate 23 are made of Direct Copper plating ceramic substrates (DPC) which are made of alumina; the size of the ceramic substrate is 40mm multiplied by 1mm and 30mm multiplied by 1 mm.

In the present embodiment, the first heating substrate 11, the second heating substrate 12, the third heating substrate 13, the first cooling substrate 21, the second cooling substrate 22, and the third cooling substrate 23 are fabricated by the following steps:

the method comprises the following steps: carrying out pretreatment cleaning on the alumina ceramic substrate;

step two: sputtering and combining a copper metal composite layer on the ceramic substrate by utilizing a special film manufacturing technology, namely a vacuum coating mode;

step three: forming a coating layer on the ceramic substrate by using a photoresist, and exposing and developing the coating layer to form electroplated copper; then, completing circuit manufacturing by etching and film removing processes;

step four: finally, the thickness of the circuit is increased in an electroplating and chemical plating deposition mode;

step five: and removing the photoresist to finish the manufacture of the metallized circuit.

The final product has the excellent electric and heat conductivity of copper.

Referring to fig. 12, the present invention further provides a testing method using the above-mentioned micro solder joint thermal transfer device based on the peltier effect, the steps of which are as follows:

s1: horizontally placing the first metal plate 8, placing the heating structure 1 on the first metal plate 8;

s2: placing the test sample 3 on the pyrogenic structure 1;

s3: placing the refrigerating structure 2 above the test sample 3, wherein the refrigerating structure 2 and the heating structure 1 are placed in an overlapped alignment;

s4: placing said second metal plate 5 above said refrigerating structure 2;

s5: connecting the first metal plate 8 and the second metal plate 5 using four sets of the connecting bolts 70, and tightening nuts 71;

s6: connecting the positive electrode and the negative electrode of a power supply through the heating plate copper wiring 15, connecting the positive electrode and the negative electrode with a pair of heating P-type semiconductors and N-type semiconductors in the heating structure 1, and connecting direct current;

s7: starting a thermal migration test, and testing the temperatures of the third heating substrate 13 and the first cooling substrate 21 by using a thermocouple thermometer;

s8: carrying out simulation by adopting finite element software; the temperature obtained by testing is used as the boundary condition of the sample welding spot, and the temperature gradient of the sample welding spot can be obtained through finite element electrothermal coupling analysis, so that reliable and stable micro-welding spot heat transfer data can be obtained.

When simulation testing is needed, the sample 3 to be tested can be selected, the micro-welding-point thermomigration device based on the Peltier effect is assembled according to the operation from the step 1 to the step 5, then direct current is connected with the heating plate copper wiring 15 on the heating structure 1, thermomigration testing is started, the temperature of the third heating substrate 13 and the temperature of the first cooling substrate 21 are measured by using a thermocouple thermodetector, the data are used as boundary conditions of a sample welding point, finite element CAE software ANSYS is used for simulation, the temperature gradient of the sample welding point is obtained through finite element electrothermal coupling analysis, and reliable and stable micro-welding-point thermomigration data are finally obtained.

The invention has the advantages of simple structure, small volume, wide range of generated temperature difference, large obtained temperature gradient and the like; the method can be used for testing the thermal migration performance, and the influence of the current load on the thermal migration of the micro-welding point can be evaluated after the sample 3 is connected with a power supply.

While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (7)

1. A micro-welding point heat transfer device based on the Peltier effect is characterized in that,

the device comprises a heating structure, a refrigerating structure, a sample and a reinforcing plate assembly, wherein the heating structure and the refrigerating structure are arranged up and down;

the reinforcing plate assembly comprises a first metal plate, a second metal plate and four groups of connecting bolts, the first metal plate and the second metal plate are arranged oppositely, the first metal plate is abutted to the heating structure, the second metal plate is abutted to the cooling structure, the four groups of connecting bolts respectively penetrate through the first metal plate and the second metal plate and are movably connected, and each group of connecting bolts is provided with adaptive nuts.

2. The Peltier-effect-based micro-solder joint thermomigration device of claim 1,

the heating structure comprises a first heating substrate, a second heating substrate, a third heating substrate, a plurality of heating plate P-type semiconductors and a plurality of heating plate N-type semiconductors, wherein the first heating substrate, the second heating substrate and the third heating substrate are arranged in a pairwise opposite mode, the first heating substrate is located above the second heating substrate, the third heating substrate is located below the second heating substrate, gaps from the second heating substrate to the first heating substrate and the third heating substrate are equal, the heating plate P-type semiconductors and the heating plate N-type semiconductors are arranged in the gaps, the numbers of the heating plate P-type semiconductors and the heating plate N-type semiconductors in the gaps are matched, and heating plate copper wiring is arranged between each pair of the heating plate P-type semiconductors and the heating plate N-type semiconductors.

3. The Peltier-effect-based micro-solder joint thermomigration device of claim 2,

the refrigerating structure comprises a first refrigerating substrate, a second refrigerating substrate, a third refrigerating substrate, a plurality of refrigerating plate P-type semiconductors and a plurality of refrigerating plate N-type semiconductors, wherein the first refrigerating substrate, the second refrigerating substrate and the third refrigerating substrate are arranged in a pairwise opposite mode, the first refrigerating substrate is located below the second refrigerating substrate, the third refrigerating substrate is located above the second refrigerating substrate, gaps from the second refrigerating substrate to the first refrigerating substrate and the third refrigerating substrate are equal, the refrigerating plate P-type semiconductors and the refrigerating plate N-type semiconductors are arranged in the gaps, the number of the refrigerating plate P-type semiconductors and the refrigerating plate N-type semiconductors in the gaps is matched, and copper wiring of the refrigerating plate is arranged between each pair of the refrigerating plate P-type semiconductors and the refrigerating plate N-type semiconductors.

4. The Peltier-effect-based micro-solder joint thermomigration device of claim 3,

the sample includes first PCB board, second PCB board and a plurality of solder joint, first PCB board with the second PCB board sets up relatively, the solder joint sets up first PCB board with between the second PCB board, a plurality of the solder joint is the array and arranges, first PCB board with all be provided with the copper wiring on the second PCB board, a plurality of connect the return circuit that forms switching on through the copper wiring between the solder joint.

5. The Peltier-effect-based micro-solder joint thermomigration device of claim 4,

the heating structure is connected with the refrigerating structure through a lead, and the size of the heating structure is matched with that of the refrigerating structure.

6. The Peltier-effect-based micro-solder joint thermomigration device of claim 5,

the contact surface of the first heating substrate and the first metal plate is coated with heat-conducting silicone grease, the contact surface of the third refrigerating substrate and the second metal plate is coated with heat-conducting silicone grease, and the contact surfaces of the sample, the heating structure and the refrigerating structure are coated with heat-conducting silicone grease.

7. A testing method using a micro-solder joint heat transfer device based on the Peltier effect according to claim 6, characterized by the following steps:

the method comprises the following steps: horizontally placing the first metal plate, and placing the heating structure on the first metal plate;

step two: placing the sample on the pyrogenic structure;

step three: placing the cryogenic structure over the test specimen with the cryogenic structure and the heating structure in overlying alignment;

step four: placing the second metal plate over the refrigeration structure;

step five: connecting the first metal plate and the second metal plate by using four groups of connecting bolts, and screwing nuts;

step six: connecting the positive electrode and the negative electrode of a power supply through the copper wiring of the heating plate, connecting the positive electrode and the negative electrode with a pair of P-type semiconductors of the heating plate and N-type semiconductors of the heating plate in the heating structure, and connecting direct current;

step seven: starting a thermal migration test, and testing the temperatures of the third heating substrate and the first uniform cooling substrate by adopting a thermocouple thermodetector;

step eight: carrying out simulation by adopting finite element software; the temperature obtained by testing is used as the boundary condition of the sample welding spot, and the temperature gradient of the sample welding spot can be obtained through finite element electrothermal coupling analysis, so that reliable and stable micro-welding spot heat transfer data can be obtained.

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