CN112538353A - Preparation method of quantum dot material - Google Patents
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Abstract
The invention belongs to the technical field of panel display, and particularly relates to a preparation method of a quantum dot material. The preparation method provided by the invention comprises the following steps: providing a quantum dot cation precursor solution and a quantum dot anion precursor solution; mixing a quantum dot cation precursor solution and a quantum dot anion precursor solution at a first temperature in an inert gas atmosphere to prepare a mixed solution containing quantum dot crystal nuclei; adjusting the temperature of the mixed liquid containing the quantum dot crystal nucleus to a second temperature to grow the quantum dot; in the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature, adding a mixture of primary amine and secondary phosphine, and mixing the mixture with the quantum dot cation precursor solution and/or the quantum dot anion precursor solution; the secondary phosphine has the general formula RR 'PH2, R is selected from alkyl or cycloalkyl, and R' is selected from alkyl or cycloalkyl. The method of the invention adds the mixture of primary amine and secondary phosphine, and realizes the high-yield synthesis of the quantum dot material.
Description
Technical Field
The invention belongs to the technical field of panel display, and particularly relates to a preparation method of a quantum dot material.
Background
The quantum dots capable of generating different emission wavelengths through size regulation and control are used as semiconductor nano fluorescent materials, and the potential application of the excellent optical performance in the aspects of light emitting diode devices, lasers, solar cells, biomolecule labeling, immunodetection and the like becomes a research hotspot in recent years. Through research in the last forty years, the synthesis process of the quantum dot material has advanced remarkably, high-quality quantum dots with high quantum yield (QY > 90%) and uniform size distribution (+ -5%) can be synthesized, however, the feeding yield of the existing synthesis process of the quantum dot material is low (< 50%), which results in low quantum dot yield.
Disclosure of Invention
The invention mainly aims to provide a preparation method of a quantum dot material, and aims to solve the technical problem of low feeding and output in the conventional quantum dot synthesis process.
Another object of the present invention is to provide a quantum dot material prepared by the above preparation method.
In order to achieve the purpose of the invention, the invention provides the following specific technical scheme:
a preparation method of a quantum dot material comprises the following steps:
providing a quantum dot cation precursor solution and a quantum dot anion precursor solution;
mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature in an inert gas atmosphere to prepare a mixed solution containing quantum dot crystal nuclei; then, adjusting the temperature of the mixed liquid containing the quantum dot crystal nucleus to a second temperature to grow the quantum dot;
in the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature, adding a mixture of primary amine and secondary phosphine, and mixing the mixture with the quantum dot cation precursor solution and/or the quantum dot anion precursor solution;
the secondary phosphine having the formula RR' PH2And R is selected from alkyl or cycloalkyl, and R' is selected from alkyl or cycloalkyl.
According to the preparation method of the quantum dot material, the mixture of primary amine and secondary phosphine is used as an active ingredient and added into the quantum dot cation precursor solution and/or the quantum dot anion precursor solution, so that the reaction activity of the quantum dot anion and cation precursors is improved, the quantum dot anion and cation precursors are driven to be converted into nuclei, the conversion rate of the quantum dot anion and cation precursors is improved, the quantum dot material is synthesized with high yield, and the cost is saved.
Correspondingly, the quantum dot material is prepared by the preparation method.
The quantum dot material prepared by the preparation method provided by the invention is prepared by adopting a mixture of primary amine and secondary phosphine as an active ingredient, and compared with the quantum dot material prepared by a conventional process, the quantum dot material has the advantages that the surface lattice defect is reduced, the half-peak width is reduced, the quantum efficiency and the stability are further improved, and the quantum dot material has good photoelectric property.
Drawings
Fig. 1 is a flowchart of a method for preparing a quantum dot material according to an embodiment of the present invention;
fig. 2 is a graph showing ultraviolet absorption spectra of quantum dot materials prepared in example 1 and comparative example 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order to effectively improve the yield of the quantum dot material, the embodiment of the invention provides the following specific technical scheme:
a method for preparing a quantum dot material, as shown in fig. 1, comprises the following steps:
s01, providing a quantum dot cation precursor solution and a quantum dot anion precursor solution;
s02, mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature in an inert gas atmosphere to prepare a mixed solution containing quantum dot crystal nuclei; then, adjusting the temperature of the mixed liquid containing the quantum dot crystal nucleus to a second temperature to grow the quantum dot;
in the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature, adding a mixture of primary amine and secondary phosphine, and mixing the mixture with the quantum dot cation precursor solution and/or the quantum dot anion precursor solution;
the secondary phosphine having the formula RR' PH2And R is selected from alkyl or cycloalkyl, and R' is selected from alkyl or cycloalkyl.
According to the preparation method of the quantum dot material, provided by the embodiment of the invention, the mixture of primary amine and secondary phosphine is used as an active ingredient and is added into the quantum dot cation precursor solution and/or the quantum dot anion precursor solution, so that the reaction activity of the quantum dot anion and cation precursors is improved, the quantum dot anion and cation precursors are driven to be converted into nuclei, the conversion rate of the quantum dot anion and cation precursors is improved, the quantum dot material is synthesized with high yield, and the cost is saved.
Specifically, in step S01, the quantum dot cation precursor solution is used to provide quantum dot cations, and the quantum dot anion precursor solution is used to provide quantum dot anions. Preferably, the quantum dot cation precursor solution contains at least one of a cadmium source, a zinc source, an indium source and a lead source, and the quantum dot anion precursor solution contains at least one of a selenium source, a sulfur source and a tellurium source.
Preferably, the solvent of the quantum dot cation precursor solution and/or the quantum dot anion precursor solution includes a non-coordinating solvent having a boiling point higher than the first temperature. The non-coordination solvent refers to a class of organic reagents without a lone electron pair matched with metal, is used for dispersing quantum dot cations and/or quantum dot anions, and is used as a reaction solvent for nucleation and growth of subsequent quantum dot materials. Further, the non-coordinating solvent is preferably at least one of alkanes, alkenes, ethers and aromatic compounds having a temperature of more than 200 ℃ and a number of carbon atoms of 10 or more and 22 or less, including but not limited to tetradecane, hexadecane, octadecane, eicosane, 1-octadecene, phenylene ether, benzyl ether, liquid paraffin and the like. In some embodiments, the non-coordinating solvent is selected to be octadecene.
In one embodiment, the solvent of the quantum dot cation precursor solution is a non-coordinating solvent with a boiling point higher than the first temperature. Further, the quantum dot cation precursor solution is mainly prepared from a quantum dot cation precursor, an acid ligand and a non-coordinating solvent with a boiling point higher than the first temperature. The quantum dot cation precursor refers to an organic or inorganic substance capable of providing quantum dot cations through reaction, and preferably, the quantum dot cation precursor is selected from at least one of a cadmium-containing compound, a zinc-containing compound, an indium-containing compound and a lead-containing compound, the zinc-containing compound includes but is not limited to zinc acetate, the cadmium-containing compound includes but is not limited to cadmium oxide, the indium-containing compound includes but is not limited to indium halide (InX)3) And the like, including but not limited to lead halides (PbX)2) And the like. The acid ligand is used for activating the quantum dot cation precursor to provide a quantum dot cation source, and enables the subsequently prepared quantum dot material to be uniformly and stably dispersed in an organic solvent, and in some embodiments, the acid ligand is selected to be oleic acid. Further, the preparation of the quantum dot cation precursor solution comprises the following steps: providing a quantum dot cation precursor, an acid ligand and a non-coordination solvent, uniformly dispersing the quantum dot cation precursor and the acid ligand in the non-coordination solvent, and heating to 80-150 ℃ for reaction until a homogeneous solution is formed. In some embodiments, the quantum dot cation precursor solution comprises: the cadmium source of the cadmium oleate is prepared by mixing cadmium oxide, oleic acid and octadecene and then heating to 100 ℃.
As one embodiment, the solvent of the quantum dot anion precursor solution includes a non-coordinating solvent and/or a coordinating solvent having a boiling point higher than the first temperature. The non-coordination solvent and/or the coordination solvent are/is used for dispersing the quantum dot anions, and the coordination solvent is a solvent containing lone electron pairs and capable of coordinating with metal, so that the solubility of a quantum dot anion precursor is improved, and a homogeneous phase quantum dot anion precursor solution is formed. Further, the coordinating solvent is preferably tertiary phosphine capable of dissolving the shell quantum dot anion precursor to provide a shell quantum dot anion source, including but not limited to tri-n-octyl phosphine (TOP) and tri-n-butyl phosphine (TBP), etc., for example, TOP is capable of dissolving and coordinating with elemental selenium, elemental sulfur, etc. to form a selenium source TOPSe or a sulfur source TOPs. In some embodiments, the solvent of the quantum dot anion precursor solution is a non-coordinating solvent. In other embodiments, the solvent of the quantum dot anion precursor solution is a coordinating solvent selected from TOP or TBP. In still other embodiments, the solvents of the quantum dot anion precursor solution are a coordinating solvent and a non-coordinating solvent.
Further, the quantum dot anion precursor solution is mainly prepared from a quantum dot anion precursor and a non-coordinating solvent and/or a coordinating solvent with the boiling point higher than the first temperature. The quantum dot anion precursor refers to a type of organic or inorganic substance capable of providing quantum dot anions through reaction, and preferably, the quantum dot anion precursor is selected from at least one of selenium-containing inorganic substances, sulfur-containing inorganic substances and tellurium-containing inorganic substances, wherein the sulfur-containing inorganic substances include but are not limited to elemental sulfur, the selenium-containing inorganic substances include but are not limited to elemental selenium, and the tellurium-containing inorganic substances include but are not limited to tellurium powder. In some embodiments, the preparation of the quantum dot anion precursor solution comprises: providing a shell layer quantum dot anion precursor and a non-coordination solvent and/or a coordination solvent, and dissolving the shell layer quantum dot anion precursor in the non-coordination solvent and/or the coordination solvent. The step of dissolving the shell layer quantum dot anion precursor in the non-coordinating solvent and/or coordinating solvent may be performed by stirring or ultrasonic methods to promote the shell layer quantum dot anion precursor to be dispersed sufficiently and uniformly.
In step S02, the quantum dot cation precursor solution and the quantum dot anion precursor solution are mixed at a first temperature to promote nucleation of the quantum dot anions and cations, thereby preparing a mixed solution containing quantum dot nuclei. In the embodiment of the present invention, the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at the first temperature may be a method of mixing the quantum dot anion and cation precursor solutions at a normal temperature and then heating the mixture to the first temperature, or a method of heating the quantum dot anion precursor solution or the quantum dot cation precursor solution to the first temperature and then adding the other solution.
In the embodiment of the invention, in the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at the first temperature, a mixture of primary amine and secondary phosphine is added to be mixed with the quantum dot cation precursor solution and/or the quantum dot anion precursor solution, and the mixture of primary amine and secondary phosphine is used as an active ingredient to improve the reaction activity of the quantum dot anion and cation precursors, drive the quantum dot anion and cation precursors to be converted into nuclei in subsequent reactions, and improve the conversion rate of the quantum dot anion and cation precursors. In some embodiments, the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature comprises: mixing the quantum dot cation precursor solution and the mixture of primary amine and secondary phosphine, heating to a first temperature, and then injecting the quantum dot anion precursor solution; in other embodiments, the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature comprises: mixing the quantum dot anion precursor solution and the mixture of primary amine and secondary phosphine, heating to a first temperature, and then injecting the quantum dot cation precursor solution; in still other embodiments, the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature comprises: mixing the mixture of primary and secondary phosphines with the quantum dot cation precursor solution and the quantum dot anion precursor solution, and then heating to a first temperature; in still other embodiments, the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature comprises: mixing the quantum dot cation precursor solution with a part of the mixture of primary amine and secondary phosphine, and heating to a first temperature to obtain a mixed solution at the first temperature; and mixing the quantum dot anion precursor solution with the rest of the mixture of the primary amine and the secondary phosphine, and then injecting the mixture into the mixed solution with the first temperature for mixing.
In embodiments of the invention, the secondary phosphine has the general formula RR' PH2And R is selected from alkyl or cycloalkyl, and R' is selected from alkyl or cycloalkyl. It is understood that R and R' are the same or different. The alkyl or cycloalkyl refers to a kind of chain or cyclic organic group containing only two atoms of carbon and hydrogen, including but not limited to: methyl, ethyl, propyl, butyl, tert-butyl, hexyl, n-octyl, isooctyl and the like. In the present embodiment, the alkyl or cycloalkyl group is preferably a saturated or unsaturated alkyl or cycloalkyl group having a carbon number of 1 to 16. In some embodiments, the secondary phosphine is selected from the group consisting of at least one of dimethyl phosphine, diethyl phosphine, dipropyl phosphine, dibutyl phosphine, di-t-butyl phosphine, dihexyl phosphine, dicyclohexyl phosphine, dioctyl phosphine, di-n-octyl phosphine, and diisooctyl phosphine.
In the embodiment of the present invention, the primary amine is preferably an organic amine having a carbon number of 1 to 22. In some embodiments, the number of carbon atoms of the primary amine is preferably 1 to 12; in other embodiments, the number of carbon atoms of the primary amine is preferably from 5 to 18; in still other embodiments, the number of carbon atoms of the primary amine is preferably 10-22, 3-15, 4-19, or 10-17.
In the inventive examples, the molar ratio of the primary amine and the secondary phosphine in the mixture of the primary amine and the secondary phosphine is (0.1-10): 1.
In one embodiment, the volume of the mixture of the primary amine and the secondary phosphine is not more than 5% of the total volume of the mixed solution containing the quantum dot crystal nuclei. In some embodiments, the volume of the mixture of the primary amine and the secondary phosphine is 0.1% to 5% of the total volume of the mixed liquid containing the quantum dot nuclei, so as to control the formation of quantum dot nuclei with uniform size.
Preferably, the first temperature is 250-300 ℃, so as to effectively control the particle size of the quantum dot crystal nucleus, so that the generated quantum dot material has a smaller particle size distribution range and higher quantum efficiency.
Preferably, in the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at the first temperature, a molar ratio of the quantum dot cation in the quantum dot cation precursor solution to the quantum dot anion in the quantum dot anion precursor solution is greater than 1.
Adjusting the temperature of the mixed solution containing the quantum dot crystal nuclei to a second temperature, and performing quantum dot growth, so that the quantum dot crystal nuclei perform curing growth to form a quantum dot material with a specific particle size range, wherein in some embodiments, the particle size of the quantum dot material is preferably 2-15nm, and more preferably 5-10 nm.
Preferably, the first temperature is higher than the second temperature, and the second temperature is preferably 220 ℃ to 280 ℃, so that the size distribution of the material is more uniform.
According to the preparation method of the quantum dot material, the two stages of nucleation and curing growth are sequentially carried out in the forming process of the quantum dot material, and the mixture of primary amine and secondary phosphine is added before the nucleation stage, so that the anion precursor and the cation precursor of the quantum dot are efficiently driven to be converted into the quantum dot crystal nucleus, the yield of the quantum dot material is effectively improved, and the feeding output ratio of the anion precursor and the cation precursor of the quantum dot is improved. In conclusion, under the comprehensive action of the optimized factors such as temperature, time, concentration and mixing proportion, the conversion rate higher than 90% can be obtained, and the yield of the quantum dot material is greatly improved. Tests show that the quantum dot material prepared by the preparation method has the half-peak width smaller than 25nm and the particle size of the quantum dot is 2-15 nm.
Correspondingly, the quantum dot material is prepared by the preparation method.
The quantum dot material prepared by the preparation method provided by the embodiment of the invention is prepared by adopting a mixture of primary amine and secondary phosphine as an active ingredient, and compared with the quantum dot material prepared by a conventional process, the quantum dot material has the advantages that the surface lattice defects are reduced, the half-peak width is reduced, the quantum efficiency and the stability are further improved, and the quantum dot material has good photoelectric properties.
Preferably, the quantum dot material prepared by the above preparation method is preferably a group II-VI compound quantum dot, a group III-V compound quantum dot, or a group IV-VI compound quantum dot. In some preferred embodiments, the group II-VI compound quantum dots comprise CdSe, CdS, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, zneses, ZnSeTe, znste, ZnTeS, CdSeS, CdSeTe, CdTeS, cdzneses, CdZnSeTe, zneseste, or cdzneseste; in further preferred embodiments, the III-V compound quantum dots comprise InP, GaP, GaAs, InAs, InAsP, GaAsP, InGaP, InGaAs, or InGaAsP; in still other embodiments, the group IV-VI compound quantum dots comprise PbS, PbSe, PbTe, PbSeS, PbSeTe, or PbSTe.
Preferably, the particle size of the quantum dot material prepared by the above preparation method is 2-15 nm.
In order to make the above implementation details and operations of the present invention clearly understood by those skilled in the art, and to make the progress of the method for preparing a quantum dot material according to the embodiments of the present invention obvious, the implementation of the present invention is illustrated by the following examples.
Example 1
The embodiment of the invention provides a preparation method of quantum dot material CdZnSe, which specifically comprises the following steps:
s11, weighing 0.2mmol of CdO, 5mmol of ZnO, 5mL of oleic acid and 15mL of octadecene, adding into a 50mL three-necked bottle, mixing, and heating to 240 ℃ to obtain a clear quantum dot cation precursor solution; then, adding 0.5mL of di-tert-butylphosphine into the quantum dot cation precursor solution, uniformly mixing, and vacuumizing for 30min to remove water vapor and air in the solution to obtain the quantum dot cation precursor solution containing the di-tert-butylphosphine;
s12, weighing a selenium simple substance and TBP, dissolving the selenium simple substance in the TBP, and preparing a quantum dot anion precursor solution with the concentration of 1M;
s13, heating the quantum dot cation precursor solution containing di-tert-butylphosphine prepared in the step S11 to 310 ℃ in a nitrogen atmosphere, quickly injecting 3mL of the quantum dot anion precursor solution prepared in the step S12, cooling to 280 ℃ and preserving the temperature for 10 minutes to obtain the reaction liquid containing the quantum dot material CdZnSe.
Detecting the absorbance of the reaction solution containing the quantum dot material CdZnSe by using an ultraviolet spectrophotometer, wherein the reaction solution has an ultraviolet absorption peak at 610nm as shown in figure 1, and the absorption peak intensity is 0.065; then, the concentration of the quantum dot material in the reaction liquid containing the quantum dot material CdZnSe was calculated from the extinction coefficient and converted into a conversion rate, and a conversion rate of 95% was obtained. Through detection, the emission peak of the quantum dot material prepared in the embodiment is 619nm, the half-peak width is 22nm, and the particle size is about 11 nm.
Example 2
The embodiment prepares the quantum dot material CdSe, and specifically comprises the following steps:
s21, weighing 0.5mmol of CdO, 1mL of oleic acid and 9mL of octadecene, adding into a 25mL three-necked bottle, mixing, and heating to 240 ℃ to obtain a clear quantum dot cation precursor solution; then, adding 1mL of n-octylamine into the quantum dot cation precursor solution for mixing, and vacuumizing for 20min to remove water vapor and air in the solution to obtain the quantum dot cation precursor solution containing the n-octylamine;
s22, weighing a selenium simple substance and TOP, dissolving the selenium simple substance in the TOP, and preparing a quantum dot anion precursor solution with the concentration of 1M;
s23, heating the quantum dot cation precursor solution containing the n-octylamine prepared in the step S21 to 280 ℃ in a nitrogen atmosphere, quickly injecting the quantum dot anion precursor solution prepared in the step S22, then cooling to 240 ℃ and preserving the temperature for 10 minutes to obtain the reaction liquid containing the quantum dot material CdSe.
The concentration of the quantum dot material CdSe in the reaction liquid containing the quantum dot material CdSe of this example was calculated from the extinction coefficient and converted into the conversion rate, and a conversion rate of 92% was obtained. Through detection, the emission peak of the quantum dot material prepared by the embodiment is 598nm, the half-peak width is 23nm, and the particle size is about 6 nm.
Comparative example
The preparation method of the quantum dot material CdZnSe comprises the following steps:
1. weighing 0.2mmol of CdO, 5mmol of ZnO, 5mL of oleic acid and 15mL of octadecene, adding into a 50mL three-necked bottle, mixing, and heating to 240 ℃ to obtain a clear quantum dot cation precursor solution;
2. weighing a selenium simple substance and TBP, dissolving the selenium simple substance in the TBP, and preparing a quantum dot anion precursor solution with the concentration of 1M;
3. in the nitrogen atmosphere, the prepared quantum dot cation precursor solution is heated to 310 ℃, 3mL of the prepared quantum dot anion precursor solution is rapidly injected, and then the temperature is reduced to 280 ℃ and is kept for 10 minutes, so that the reaction liquid containing the quantum dot material CdZnSe is obtained.
Detecting the absorbance of the reaction liquid containing the quantum dot material CdZnSe of the comparative example by using an ultraviolet spectrophotometer, wherein an ultraviolet absorption peak exists at 615nm, and the absorption peak intensity is 0.023 as shown in FIG. 2; then, the concentration of the quantum dot material in the reaction liquid containing the quantum dot material CdZnSe was calculated from the extinction coefficient and converted into a conversion rate, and a conversion rate of 34% was obtained. Through detection, the emission peak of the quantum dot material prepared by the embodiment is 621nm, the half-peak width is 26nm, and the particle size is about 8 nm.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The preparation method of the quantum dot material is characterized by comprising the following steps of:
providing a quantum dot cation precursor solution and a quantum dot anion precursor solution;
mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature in an inert gas atmosphere to prepare a mixed solution containing quantum dot crystal nuclei; then, adjusting the temperature of the mixed liquid containing the quantum dot crystal nucleus to a second temperature to grow the quantum dot;
in the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature, adding a mixture of primary amine and secondary phosphine, and mixing the mixture with the quantum dot cation precursor solution and/or the quantum dot anion precursor solution;
the secondary phosphine having the formula RR' PH2And R is selected from alkyl or cycloalkyl, and R' is selected from alkyl or cycloalkyl.
2. The production method according to claim 1, wherein the number of carbon atoms of the primary amine is 1 to 22; and/or
In the mixture of the primary amine and the secondary phosphine, the molar ratio of the primary amine to the secondary phosphine is (0.1-10): 1.
3. The method according to claim 1, wherein a volume of the mixture of the primary amine and the secondary phosphine is not more than 5% of a total volume of the mixed solution containing the quantum dot crystal nuclei.
4. The method of claim 1, wherein the quantum dot cation precursor solution comprises at least one of a cadmium source, a zinc source, an indium source, and a lead source; and/or
The quantum dot anion precursor solution contains at least one of a selenium source, a sulfur source and a tellurium source.
5. The method as claimed in claim 1, wherein the first temperature is higher than the second temperature, and the second temperature is about 220-280 ℃.
6. The method of any one of claims 1 to 5, wherein the solvent of the quantum dot cation precursor solution and/or the quantum dot anion precursor solution comprises a non-coordinating solvent having a boiling point higher than the first temperature.
7. The production method according to claim 6, wherein the non-coordinating solvent comprises at least one of an alkane, an alkene, an ether and an aromatic compound having a carbon number of 10 or more and 22 or less.
8. The preparation method according to any one of claims 1 to 5, wherein the solvent of the quantum dot anion precursor solution comprises a non-coordinating solvent and/or a coordinating solvent having a boiling point higher than a first temperature; and/or
The solvent of the quantum dot cation precursor solution comprises an acid ligand and a non-coordinating solvent with the boiling point higher than the first temperature, wherein the acid ligand comprises saturated or unsaturated fatty acid with the carbon atom number of more than or equal to 6.
9. A quantum dot material produced by the production method according to any one of claims 1 to 8.
10. The quantum dot material of claim 9, wherein the quantum dot material is selected from group II-VI compound quantum dots, group III-V compound quantum dots, or group IV-VI compound quantum dots.
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