CN112532042A - Charge pump structure of medical power supply - Google Patents
Charge pump structure of medical power supply Download PDFInfo
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- CN112532042A CN112532042A CN202011373798.6A CN202011373798A CN112532042A CN 112532042 A CN112532042 A CN 112532042A CN 202011373798 A CN202011373798 A CN 202011373798A CN 112532042 A CN112532042 A CN 112532042A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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Abstract
The invention relates to a charge pump arrangement for a medical power supply, configured to generate an output voltage from a substantially square wave input signal varying between a first voltage and a ground voltage, the charge pump arrangement comprising: a semiconductor layer of a first conductivity type; a first external well and a second external well separated from each other in the semiconductor layer and having a second conductive type; a first inner well formed in the first outer well and having a first conductivity type; a second inner well of the first conductivity type formed in the second outer well; a first capacitor having a first terminal, a second terminal connected to the first external well, the first terminal having a substantially square wave input signal applied thereto; and a second capacitor having a first terminal connected to the first capacitor and a second terminal connected to the second external well, wherein a first voltage is applied to the first external well and a voltage lower than the first voltage is applied to the second external well. The charge pump can greatly improve the power supply stability of the medical power supply and is not interfered by electrons.
Description
Technical Field
The invention relates to the field of medical electronic equipment, in particular to a charge pump structure of a medical power supply
Background
Charge pumps and related methods have important applications in electronic devices. For example, in certain low power memory devices, it may be advantageous to bias the substrate of the memory with a negative voltage to reduce leakage current. Since power or current consumption is an important consideration in designing certain electronic devices, efforts continue to be made to create devices with effective negative charge pumps. The conventional charge pump needs to receive the operation signal (US20160308435a1, US20130294123a1) from the outside, and the operation signal is a fixed operation frequency. In order to achieve a high load driving capability of the charge pump, the fixed operating frequency is usually set high. However, when the load is changed from a heavy load to a light load, the proportion of power consumption inside the charge pump is significantly increased, resulting in unnecessary power consumption. Furthermore, when the output voltage of the charge pump is to be adjusted, the transmission of the operation signal to the charge pump is usually stopped. However, in this way, the operation signal cannot control the response of the charge pump quickly during the load transition, which results in a large output voltage ripple of the charge pump. In view of the above problems, the present invention provides a charge pump capable of automatically controlling an operating frequency, which generates a power-saving operating frequency by detecting an internal state of the charge pump according to a load. Moreover, the charge pump of the invention achieves the characteristics of small output voltage ripple, quick response and the like. And in the application of image sensors as cameras applied to capture still images or moving images, and widely applied to medical devices such as CT apparatuses, B-ultrasonic apparatuses, and the like. With the increasing demand for performance of medical devices, research has been conducted to improve dark current characteristics of image sensors using better charge pumps.
Disclosure of Invention
The invention discloses a medical power supply charge pump structure configured to generate an output voltage from a substantially square wave input signal varying between a first voltage and a ground voltage, the charge pump structure comprising: a semiconductor layer of a first conductivity type;
a first external well and a second external well separated from each other in the semiconductor layer and having a second conductive type;
a first inner well formed in the first outer well and having a first conductivity type;
a second inner well of the first conductivity type formed in the second outer well;
a first capacitor having a first terminal, a second terminal connected to the first external well, the first terminal having a substantially square wave input signal applied thereto; and
a second capacitor having a first terminal connected to the first capacitor, a second terminal connected to the second external well,
wherein a first voltage is applied to the first outer well, an
A voltage lower than the first voltage is applied to the second external well.
The charge pump structure of (a), wherein a ground voltage is applied to the second external well; the output voltage is lower than the grounding voltage; the magnitude of the output voltage is substantially twice the first voltage; applying a second voltage lower than the ground voltage to the first internal well; the magnitude of the first voltage and the magnitude of the second voltage are substantially the same; applying a third voltage lower than the second voltage to the second internal well; the third voltage is substantially equal to the output voltage.
A charge pump structure comprising:
a first stage including a first capacitor having a first terminal to which an input signal is applied and a first transistor connected to a second terminal of the first capacitor; and
a second stage comprising a second capacitor having a first terminal connected to the second terminal of the first capacitor and a second transistor connected to the second terminal of the second capacitor,
wherein the first transistor includes a gate electrode to which a ground voltage and a second voltage lower than the ground voltage are alternately applied, and the second transistor includes a gate electrode to which the second voltage and a third voltage lower than the ground voltage are alternately applied.
The charge pump structure is characterized in that an input signal changes between a first voltage and a ground voltage, and the magnitude of a second voltage is basically equal to that of the first voltage; the third voltage is substantially twice the second voltage; the input signal varies between a first voltage and a ground voltage, the first voltage being applied to a body of the first transistor; applying a ground voltage to a body of the second transistor; the second stage further includes a third transistor connected between the second terminal of the second capacitor and the output terminal, and the third transistor includes a gate electrode to which the second voltage and the third voltage are alternately applied; a negative second voltage is applied to the body of the third transistor.
A medical power supply charge pump structure configured to generate an output voltage using an input signal alternately providing a high voltage and a low voltage, the charge pump structure comprising:
a first stage including a first capacitor having a first terminal to which an input signal is applied and a first transistor connected to a second terminal of the first capacitor; and
a second stage comprising a second capacitor having a first terminal connected to the second terminal of the first capacitor and a second transistor connected to the second terminal of the second capacitor,
wherein the first transistor includes a body to which a high voltage is applied, and the second transistor includes a body to which a low voltage is applied.
In the charge pump structure, the second stage further includes a third transistor including a first electrode connected to the second terminal of the second capacitor and a second electrode to which a low voltage lower than a low voltage is applied; the third transistor further includes a body to which a lowest voltage lower than the lower voltage is applied; the charge pump architecture further generates an output voltage using complementary input signals that alternately provide a high voltage and a low voltage and have opposite phases to the input signals;
the first stage also includes a third capacitor having a first terminal to which a complementary input signal is applied and a fourth transistor connected to a second terminal of the third capacitor. And
the second stage further includes a fourth capacitor having a first terminal to which a complementary input signal is applied, and fifth and sixth transistors respectively including a first electrode connected to the second capacitor; a terminal of a fourth capacitor; the fourth transistor includes a body to which a high voltage is applied; the fifth transistor includes a body to which a lower voltage is applied; and the sixth transistor includes a body to which a lowest voltage lower than the lower voltage is applied.
Drawings
Fig. 1 is a schematic diagram of a medical power supply charge pump structure according to the present invention.
Detailed Description
The present application will now be described in further detail with reference to the drawings, it should be noted that the following detailed description is given for illustrative purposes only and is not to be construed as limiting the scope of the present application, as those skilled in the art will be able to make numerous insubstantial modifications and adaptations to the present application based on the above disclosure.
As shown in fig. 1, which is a schematic diagram of a medical power supply charge pump structure configured to generate an output voltage according to a substantially square wave input signal varying between a first voltage and a ground voltage, the charge pump structure includes: a semiconductor layer of a first conductivity type;
a first external well and a second external well separated from each other in the semiconductor layer and having a second conductive type;
a first inner well formed in the first outer well and having a first conductivity type;
a second inner well of the first conductivity type formed in the second outer well;
a first capacitor having a first terminal, a second terminal connected to the first external well, the first terminal having a substantially square wave input signal applied thereto; and
a second capacitor having a first terminal connected to the first capacitor, a second terminal connected to the second external well,
wherein a first voltage is applied to the first outer well, an
A voltage lower than the first voltage is applied to the second external well.
The charge pump structure of (a), wherein a ground voltage is applied to the second external well; the output voltage is lower than the grounding voltage; the magnitude of the output voltage is substantially twice the first voltage; applying a second voltage lower than the ground voltage to the first internal well; the magnitude of the first voltage and the magnitude of the second voltage are substantially the same; applying a third voltage lower than the second voltage to the second internal well; the third voltage is substantially equal to the output voltage.
A medical power charge pump structure comprising:
a first stage including a first capacitor having a first terminal to which an input signal is applied and a first transistor connected to a second terminal of the first capacitor; and
a second stage comprising a second capacitor having a first terminal connected to the second terminal of the first capacitor and a second transistor connected to the second terminal of the second capacitor,
wherein the first transistor includes a gate electrode to which a ground voltage and a second voltage lower than the ground voltage are alternately applied, and the second transistor includes a gate electrode to which the second voltage and a third voltage lower than the ground voltage are alternately applied.
The charge pump structure is characterized in that an input signal changes between a first voltage and a ground voltage, and the magnitude of a second voltage is basically equal to that of the first voltage; the third voltage is substantially twice the second voltage; the input signal varies between a first voltage and a ground voltage, the first voltage being applied to a body of the first transistor; applying a ground voltage to a body of the second transistor; the second stage further includes a third transistor connected between the second terminal of the second capacitor and the output terminal, and the third transistor includes a gate electrode to which the second voltage and the third voltage are alternately applied; a negative second voltage is applied to the body of the third transistor.
A charge pump structure configured to generate an output voltage using an input signal alternately providing a high voltage and a low voltage, the charge pump structure comprising:
a first stage including a first capacitor having a first terminal to which an input signal is applied and a first transistor connected to a second terminal of the first capacitor; and
a second stage comprising a second capacitor having a first terminal connected to the second terminal of the first capacitor and a second transistor connected to the second terminal of the second capacitor,
wherein the first transistor includes a body to which a high voltage is applied, and the second transistor includes a body to which a low voltage is applied.
In the charge pump structure, the second stage further includes a third transistor including a first electrode connected to the second terminal of the second capacitor and a second electrode to which a low voltage lower than a low voltage is applied; the third transistor further includes a body to which a lowest voltage lower than the lower voltage is applied; the charge pump architecture further generates an output voltage using complementary input signals that alternately provide a high voltage and a low voltage and have opposite phases to the input signals;
the first stage also includes a third capacitor having a first terminal to which a complementary input signal is applied and a fourth transistor connected to a second terminal of the third capacitor. And
the second stage further includes a fourth capacitor having a first terminal to which a complementary input signal is applied, and fifth and sixth transistors respectively including a first electrode connected to the second capacitor; a terminal of a fourth capacitor; the fourth transistor includes a body to which a high voltage is applied; the fifth transistor includes a body to which a lower voltage is applied; and the sixth transistor includes a body to which a lowest voltage lower than the lower voltage is applied.
The charge pump structure includes a semiconductor layer of a first conductivity type; and a second semiconductor layer. A first external well and a second external well separated from each other in the semiconductor layer and having a second conductive type; a first inner well formed in the first outer well and having a first conductivity type; a second inner well of the first conductivity type formed in the second outer well; a first capacitor having a first terminal to which an input signal is applied and a second terminal connected to the first external well. And a second capacitor having a first terminal connected to the first capacitor and a second terminal connected to the second external well, wherein a first voltage may be applied to the first external well and a voltage lower than the first voltage may be applied to the second external well.
According to another aspect of the present disclosure, there is provided a medical power charge pump structure configured to output a voltage lower than a ground voltage to an output terminal using an input signal alternately supplying the ground voltage and a first voltage higher than the ground voltage. A ground voltage.
The charge pump structure includes: a first stage including a first capacitor having a first terminal to which an input signal is applied and a first transistor connected to a second terminal of the first capacitor; and a second stage including a second capacitor and a second transistor, a first terminal of the second capacitor being connected to a second terminal of the first capacitor, the second transistor being connected to a second terminal of the second capacitor, wherein the first transistor may include: a gate to which a ground voltage and a second voltage lower than the ground voltage are alternately applied; the second transistor may include a gate having the second voltage and a third voltage lower than the ground voltage applied thereto alternately.
According to another aspect of the present disclosure, a charge pump structure is provided that is configured to generate an output voltage using an input signal that alternately provides a first voltage and a ground voltage.
The charge pump structure includes: a first stage including a first capacitor having a first terminal to which an input signal is applied and a first transistor connected to a second terminal of the first capacitor; and a second stage including a second capacitor and a second transistor, a first terminal of the second capacitor being connected to a second terminal of the first capacitor, the second transistor being connected to a second terminal of the second capacitor, wherein the first transistor may include a body to which the first voltage is applied, and the second transistor may include a body to which the ground voltage is applied.
According to still another aspect of the present disclosure, there is provided an image sensor including a plurality of pixels formed in a semiconductor layer of a first conductivity type and arranged in a matrix; an isolation film disposed at the same level as the semiconductor layer and configured to isolate the plurality of pixels from each other; a timing generator configured to generate an input signal providing a first voltage and a ground voltage; and a charge pump structure configured to provide an output voltage to the isolation film using an input signal, wherein the charge pump structure may include first and second external wells respectively formed in the semiconductor layer and having the second conductive type. A first inner well formed in the first outer well and having a first conductivity type; a second inner well formed in the second outer well and having the first conductive type, a second voltage lower than a ground voltage is applied to the first inner well, a third voltage lower than the second voltage may be applied to the second inner well and output to the second inner well, and the output voltage may be substantially equal to the third voltage.
According to yet another aspect of the present disclosure, there is provided a medical influence device including a plurality of pixels formed in a semiconductor layer of a first conductivity type and arranged in a matrix; an isolation film disposed at the same level as the semiconductor layer and configured to isolate the plurality of pixels from each other; a timing generator configured to generate an input signal providing a first voltage and a ground voltage; and a charge pump structure configured to provide an output voltage to the isolation film using an input signal, wherein the charge pump structure includes first and second external wells respectively formed in the semiconductor layer and having the second conductive type. A first inner well formed in the first outer well and having a first conductivity type; and a second inner well formed in the second outer well and having the first conductive type, wherein a second voltage lower than a ground voltage is applied to the first inner well, a third voltage lower than the second voltage is applied to the second inner well, and the output voltage is substantially equal to the third voltage.
According to another aspect of the present disclosure, there is provided a semiconductor device including a semiconductor layer of a first conductivity type; and a second semiconductor layer. A separation film at the same level as the semiconductor layer; a timing generator configured to generate an input signal having a first voltage and a ground voltage; and a charge pump configured to supply an output voltage to the isolation film based on an input signal, the charge pump including first and second outer wells, first and second inner wells, respectively formed in the semiconductor layer and having a second conductivity type. A well formed in the first outer well and having the first conductive type, and a second inner well formed in the second outer well and having the first conductive type, wherein a second voltage lower than a ground voltage is applied to the first well. An inner well, wherein a third voltage lower than the second voltage is applied to the second inner well, and wherein the output voltage is substantially equal to the third voltage.
According to an exemplary embodiment, the first stage may output a first node voltage Vn 1.
The first node voltage Vn1 may be a square wave signal different from the input voltage Vin.
The first node voltage Vn1 may be a square wave signal varying between a ground voltage GND and a second voltage V2 different from the first voltage V1.
The first node voltage Vn1 may be input to the second stage 12.
The second stage may output the output voltage Vout.
The output voltage Vout may have a substantially constant voltage value.
For example, the output voltage Vout may be substantially equal to the third voltage V3.
According to an exemplary embodiment, the first stage may include a first outer well NW1 and a first inner well PW 1.
The first inner well PW1 may be formed in the first outer well NW 1.
According to an example embodiment, the first outer well NW1 may have an opposite conductivity type to the first inner well PW 1.
For example, when the first outer well NW1 has n-type conductivity, the first inner well PW1 may have p-type conductivity.
In another example, when the first outer well NW1 has p-type conductivity, the first inner well PW1 may have n-type conductivity.
Hereinafter, for convenience of description, it is assumed that the first outer well NW1 has n-type conductivity and the first inner well PW1 has p-type conductivity.
However, it is to be understood that based on the description herein, one of ordinary skill in the related art will be readily able to implement a charge pump structure in which the first outer well NW1 has p-type conductivity and the first inner well PW1 has p-type conductivity. N-type conductivity in a manner similar to that described herein.
Continuing now with the example in which the first outer well NW1 has n-type conductivity and the first inner well PW1 has p-type conductivity, the voltage applied to the first outer well NW1 may be different from the voltage applied to the first inner well NW 1. PW1 is good.
The first voltage V1 may be applied to the first outer well NW 1.
A second voltage V2 different from the first voltage V1 may be applied to the first internal well PW 1.
In some examples, the second voltage V2 may have an opposite polarity to the first voltage V1.
According to an exemplary embodiment, the second stage may include a second outer well NW2 and a second inner well PW 2.
The second inner well PW2 may be formed in the second outer well NW 2.
According to an example embodiment, the second outer well NW2 may have an opposite conductivity type to the second inner well PW 2.
For example, when the second outer well NW2 has n-type conductivity, the second inner well PW2 may have p-type conductivity.
In another example, when the second outer well NW2 has p-type conductivity, the second inner well PW2 may have n-type conductivity.
According to an exemplary embodiment, the voltage applied to the second external well NW2 may be different from the voltage applied to the first external well NW 1.
The ground voltage GND may be applied to the second external well NW 2.
According to an exemplary embodiment, the ground voltage GND is a reference point of other potentials, and may be defined to have a potential of 0V. However, the embodiment is not limited thereto, and a voltage higher than the ground voltage GND, for example, a voltage equal to or higher than 1V may be applied to the second external well NW 2.
According to an exemplary embodiment, a voltage applied to the second internal well PW2 may be different from a voltage applied to the first internal well PW 1.
According to an exemplary embodiment, a third voltage V3 may be applied to the second internal well PW 2.
According to an exemplary embodiment, the third voltage V3 may be substantially twice the second voltage V2, but is not limited thereto.
According to an exemplary embodiment, a voltage difference between the first outer well NW1 and the first inner well PW1 may be substantially the same as a voltage difference between the second outer well NW2 and the second inner well PW2, but the embodiment is not limited thereto.
For example, the voltage difference between the first outer well NW1 and the first inner well PW1 may be different from the voltage difference between the second outer well NW2 and the second inner well PW 2.
According to an exemplary embodiment, a voltage difference between the second outer well NW2 and the second inner well PW2 may be greater than a voltage difference between the first outer well NW1 and the first inner well PW 1.
In summary, the scheme adopted by the invention is to directly connect each peripheral circuit such as a voltage threshold and the like on the standby chip of the original medical power supply control switch to obtain the functions of overvoltage, undervoltage and even overcurrent protection, the implementation mode is simple and effective, the cost is lower, and the requirement of high reliability can be met.
Claims (6)
1. A charge pump architecture for a medical power supply configured to generate an output voltage from a substantially square wave input signal varying between a first voltage and a ground voltage, the charge pump architecture comprising: a semiconductor layer of a first conductivity type;
a first external well and a second external well separated from each other in the semiconductor layer and having a second conductive type;
a first inner well formed in the first outer well and having a first conductivity type;
a second inner well of the first conductivity type formed in the second outer well;
a first capacitor having a first terminal, a second terminal connected to the first external well, the first terminal having a substantially square wave input signal applied thereto; and
a second capacitor having a first terminal connected to the first capacitor, a second terminal connected to the second external well,
wherein a first voltage is applied to the first outer well, an
A voltage lower than the first voltage is applied to the second external well.
2. The charge pump structure of claim 1, wherein a ground voltage is applied to the second external well; the output voltage is lower than the grounding voltage; the magnitude of the output voltage is substantially twice the first voltage; applying a second voltage lower than the ground voltage to the first internal well; the magnitude of the first voltage and the magnitude of the second voltage are substantially the same; applying a third voltage lower than the second voltage to the second internal well; the third voltage is substantially equal to the output voltage.
3. A charge pump structure, comprising:
a first stage including a first capacitor having a first terminal to which an input signal is applied and a first transistor connected to a second terminal of the first capacitor; and
a second stage comprising a second capacitor having a first terminal connected to the second terminal of the first capacitor and a second transistor connected to the second terminal of the second capacitor,
wherein the first transistor includes a gate electrode to which a ground voltage and a second voltage lower than the ground voltage are alternately applied, and the second transistor includes a gate electrode to which the second voltage and a third voltage lower than the ground voltage are alternately applied.
4. The charge pump architecture of claim 3, wherein the input signal varies between a first voltage and a ground voltage, a magnitude of the second voltage being substantially equal to a magnitude of the first voltage; the third voltage is substantially twice the second voltage; the input signal varies between a first voltage and a ground voltage, the first voltage being applied to a body of the first transistor; applying a ground voltage to a body of the second transistor; the second stage further includes a third transistor connected between the second terminal of the second capacitor and the output terminal, and the third transistor includes a gate electrode to which the second voltage and the third voltage are alternately applied; a negative second voltage is applied to the body of the third transistor.
5. A charge pump structure configured to generate an output voltage using an input signal alternately providing a high voltage and a low voltage, the charge pump structure comprising:
a first stage including a first capacitor having a first terminal to which an input signal is applied and a first transistor connected to a second terminal of the first capacitor; and
a second stage comprising a second capacitor having a first terminal connected to the second terminal of the first capacitor and a second transistor connected to the second terminal of the second capacitor,
wherein the first transistor includes a body to which a high voltage is applied, and the second transistor includes a body to which a low voltage is applied.
6. The charge pump structure according to claim 5, wherein the second stage further comprises a third transistor including a first electrode connected to the second terminal of the second capacitor and a second electrode to which a low voltage lower than the low voltage is applied; the third transistor further includes a body to which a lowest voltage lower than the lower voltage is applied; the charge pump architecture further generates an output voltage using complementary input signals that alternately provide a high voltage and a low voltage and have opposite phases to the input signals;
the first stage also includes a third capacitor having a first terminal to which a complementary input signal is applied and a fourth transistor connected to a second terminal of the third capacitor. And
the second stage further includes a fourth capacitor having a first terminal to which a complementary input signal is applied, and fifth and sixth transistors respectively including a first electrode connected to the second capacitor; a terminal of a fourth capacitor; the fourth transistor includes a body to which a high voltage is applied; the fifth transistor includes a body to which a lower voltage is applied; and the sixth transistor includes a body to which a lowest voltage lower than the lower voltage is applied.
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| CN202011373798.6A CN112532042A (en) | 2020-11-30 | 2020-11-30 | Charge pump structure of medical power supply |
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| CN202011373798.6A CN112532042A (en) | 2020-11-30 | 2020-11-30 | Charge pump structure of medical power supply |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10826389B1 (en) * | 2019-05-28 | 2020-11-03 | Samsung Electronics Co., Ltd. | Charge pump device and image sensor including the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10826389B1 (en) * | 2019-05-28 | 2020-11-03 | Samsung Electronics Co., Ltd. | Charge pump device and image sensor including the same |
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