CN112531044A - Crystalline silicon photovoltaic module with incident angle correction factor - Google Patents
Crystalline silicon photovoltaic module with incident angle correction factor Download PDFInfo
- Publication number
- CN112531044A CN112531044A CN202011309940.0A CN202011309940A CN112531044A CN 112531044 A CN112531044 A CN 112531044A CN 202011309940 A CN202011309940 A CN 202011309940A CN 112531044 A CN112531044 A CN 112531044A
- Authority
- CN
- China
- Prior art keywords
- photovoltaic module
- crystalline silicon
- layer
- correction factor
- angle correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010410 layer Substances 0.000 claims abstract description 68
- 239000011521 glass Substances 0.000 claims abstract description 48
- 239000011247 coating layer Substances 0.000 claims abstract description 35
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000001579 optical reflectometry Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 239000005341 toughened glass Substances 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims 2
- 238000010248 power generation Methods 0.000 abstract description 9
- 238000002834 transmittance Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a crystalline silicon photovoltaic module with an incidence angle correction factor, which comprises coated glass, an upper EVA layer, a solar cell array, a lower EVA layer and a reflecting back plate which are sequentially arranged from top to bottom; the coated glass comprises a coating layer and a glass layer which are arranged from top to bottom, and pyramid-shaped light trapping structures are arranged on the upper surface and the lower surface of the glass layer in a protruding mode. According to the crystalline silicon photovoltaic module with the incident angle correction factor, the structure of the coated glass is optimized, so that the coated glass has good light transmittance under the condition of oblique sunlight, the conversion efficiency and the power generation amount of the photovoltaic module can be effectively improved, and the defects in the prior art are overcome.
Description
Technical Field
The invention relates to the technical field of solar crystalline silicon solar cell modules, in particular to a crystalline silicon photovoltaic module with an incidence angle correction factor.
Background
Through the rapid development of the solar photovoltaic industry in recent years, various new products and new technologies are popularized and developed unprecedentedly, with the higher and higher requirements of customers on products, the higher the investment return is, the better the customers want, the solar component is the core part of a solar power station, the solar energy can be converted into electric energy by utilizing the photovoltaic effect, the higher the generating performance of the solar component is, and the higher the investment return is.
In the current market, the utilization rate of sunlight of a conventional crystalline silicon photovoltaic module is low under the condition of oblique incidence of the sun, and more than 70% of the time of the crystalline silicon photovoltaic module in normal use works under the condition of oblique incidence (the conditions of diffusion in the morning, evening, cloudy day and the like). Therefore, a photovoltaic module with higher transmittance even under the condition of oblique sunlight is needed to improve the power generation capacity of the module.
Disclosure of Invention
The invention aims to provide a crystalline silicon photovoltaic module with an incidence angle correction factor, which has better light transmittance under the condition of oblique sunlight by optimizing the structure of coated glass, so that the conversion efficiency and the power generation amount of the photovoltaic module can be effectively improved, and the defects in the prior art are overcome.
In order to achieve the purpose, the invention adopts the following technical scheme:
the crystalline silicon photovoltaic module with the incident angle correction factor comprises coated glass, an upper EVA layer, a solar cell array, a lower EVA layer and a reflecting back plate which are sequentially arranged from top to bottom;
the coated glass comprises a coating layer and a glass layer which are arranged from top to bottom, and pyramid-shaped light trapping structures are arranged on the upper surface and the lower surface of the glass layer in a protruding mode.
Preferably, a plurality of circular holes with different diameters are formed in the coating layer, and the diameter of each circular hole is 1-5 nm.
Preferably, the upper surface of the coating layer is a textured surface.
Preferably, the refractive index of the coating layer is 1.23-1.28%.
Preferably, the thickness of the coating layer is 100-130 nm.
Preferably, the reflection backboard has an oblique light reflectivity of more than or equal to 93% within a wavelength of 400-1200 nm.
Preferably, the height of the light trapping structure on the upper surface of the glass layer is 0.01-0.05 mm, and the center distance between the two light trapping structures is 0.01-0.02 mm.
Preferably, the wavelength of the light which can penetrate through the upper EVA layer is 280-1150 nm; the lower EVA layer is an ultraviolet cut-off EVA layer, and the wavelength of light which can penetrate through the lower EVA layer is 400-1150 nm.
Preferably, the coating layer is an SiO2 coating, and the glass layer is super-white toughened glass.
Preferably, the solar cell array comprises cell pieces and solder strips, the cell pieces are P-type single crystal PERC cells, and the solder strips are connected between the cell pieces.
The invention has the beneficial effects that:
1. according to the technical scheme, the pyramid-shaped light trapping structure is convexly arranged on the upper surface of the glass layer, when light rays of direct light or oblique light irradiate the pyramid-shaped light trapping structure on the upper surface of the glass layer, the light rays can be reflected and refracted for many times under the action of the light trapping structure, so that more light rays can enter the photovoltaic module, and the utilization rate of the module to sunlight is effectively improved;
2. according to the technical scheme, the pyramid-shaped light trapping structure is convexly arranged on the lower surface of the glass layer, on one hand, the light trapping structure positioned on the lower surface of the glass layer can reflect light rays reflected to the inside of the photovoltaic module by the reflection back plate for the second time and reflect the light rays to the surface of the solar cell array again, so that more light rays can enter the photovoltaic module, the utilization rate of sunlight by the module is effectively improved, and the conversion efficiency and the outdoor power generation capacity performance of the module are improved; on the other hand, the light trapping structure positioned on the lower surface of the glass layer also increases the bonding strength between the glass layer and the upper EVA layer;
3. a plurality of round holes with different diameters are formed in the coating layer. When incident light and reflected light enter the round holes, the round holes in the coating layer play a role in capturing light, and are beneficial to transmitting more light to the solar cell array, so that more light can further enter the photovoltaic module, and the utilization rate of the module to sunlight is more effectively improved;
4. the upper surface of the coating layer in the technical scheme is a suede surface, and the design of the suede surface is beneficial to enabling more light to enter the coating layer, so that the utilization rate of the assembly to sunlight is improved; the coating layer in the technical scheme has a low refractive index, and the antireflection effect of the coating layer under the oblique light condition is better than that under the direct light condition according to the Fresnel law, so that the arrangement of the coating layer with the low refractive index is beneficial to reducing or eliminating the reflected light on the surface of the coating layer, thereby increasing the light transmittance of the photovoltaic module;
5. because the reflection backplate among this technical scheme has high reflectivity, when oblique light shines on the reflection backplate, can make more light reflect to the round hole that is located the light trapping structure and the coating film layer of glass layer lower surface, through reflecting once more, be favorable to making more oblique light transmit solar cell array surface to further be favorable to more light to enter into photovoltaic module, promote the utilization ratio of subassembly to the sunlight more effectively.
Drawings
The drawings are further illustrative of the invention and the content of the drawings does not constitute any limitation of the invention.
Fig. 1 is a schematic structural diagram of a crystalline silicon photovoltaic module with an incident angle correction factor according to the present invention.
Fig. 2 is an optical diagram of a crystalline silicon photovoltaic module with an incident angle correction factor according to the present invention.
FIG. 3 is a light path diagram of a circular hole inside a coating layer in a crystalline silicon photovoltaic module with an incident angle correction factor according to the present invention.
FIG. 4 is a light path diagram of a light trapping structure on the upper surface of a glass layer in a crystalline silicon photovoltaic module with an incident angle correction factor according to the present invention.
FIG. 5 is a schematic diagram of a glass layer in a crystalline silicon photovoltaic module having an incident angle correction factor according to the present invention.
Wherein: the solar cell comprises coated glass 1, a coated layer 11, round holes 111, a suede 112, a glass layer 12, a light trapping structure 121, an upper EVA layer 2, a solar cell array 3, a cell 31, a solder strip 32, a lower EVA layer 4 and a reflection back plate 5.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
The crystalline silicon photovoltaic module with the incident angle correction factor comprises coated glass 1, an upper EVA layer 2, a solar cell array 3, a lower EVA layer 4 and a reflecting back plate 5 which are sequentially arranged from top to bottom;
the coated glass 1 comprises a coated layer 11 and a glass layer 12 which are arranged from top to bottom, and pyramid-shaped light trapping structures 121 are arranged on the upper surface and the lower surface of the glass layer 12 in a protruding mode.
In the existing market, the utilization rate of sunlight of a conventional crystalline silicon photovoltaic module is low under the condition of oblique incidence of the sun, and more than 70% of the time of the crystalline silicon photovoltaic module is in normal use under the oblique incidence condition (the conditions of diffusion in the morning, evening and cloudy day), so that the overall sunlight utilization rate of the crystalline silicon photovoltaic module is easily low, and the conversion efficiency and the outdoor power generation capacity of the crystalline silicon photovoltaic module are reduced.
In order to solve the problems, the technical scheme provides a crystalline silicon photovoltaic module with an incidence angle correction factor, which comprises coated glass 1, an upper EVA layer 2, a solar cell array 3, a lower EVA layer 4 and a reflecting back plate 5; the coated glass 1 comprises a coating layer 11 and a glass layer 12 which are arranged from top to bottom, the upper surface of the glass layer 12 is convexly provided with a pyramid-shaped light trapping structure 121, and when incident light (including direct light and oblique light) irradiates the pyramid-shaped light trapping structure 121 on the upper surface of the glass layer 12, the light can be reflected and refracted for many times under the action of the light trapping structure 121, so that more light can enter a photovoltaic module, and the utilization rate of the module to sunlight is effectively improved; furthermore, the lower surface of the glass layer 12 is also convexly provided with the pyramid-shaped light trapping structure 121, on one hand, the light trapping structure 121 on the lower surface of the glass layer 12 can reflect the light rays reflected to the inside of the photovoltaic module by the reflection back plate 5 for the second time, and reflect the light rays to the surface of the solar cell array 3 again, so that more light rays can enter the photovoltaic module, the utilization rate of the module to sunlight is effectively improved, and the conversion efficiency and the outdoor power generation capacity of the module can be improved; on the other hand, the light trapping structure 121 located on the lower surface of the glass layer 12 also increases the bonding strength between the glass layer 12 and the upper EVA layer 2.
According to the technical scheme, the coated glass 1 with the pyramid-shaped light trapping structure 121 is adopted, the photovoltaic module can have high transmittance and good power generation performance under different incident angle conditions, specifically, the direct light transmittance of the crystalline silicon photovoltaic module in the technical scheme can reach 96-96.5%, the oblique light transmittance is not less than 85%, compared with a conventional photovoltaic module, the power of the crystalline silicon photovoltaic module with the incident angle correction factor in the technical scheme can be improved by 2-3W, and the power generation capacity can be improved by 1.5%.
It should be noted that, in the present technical solution, the direct light refers to a light ray with an incident angle of 0 °, and the oblique light refers to a light ray with an incident angle of 0-90 °.
Furthermore, a plurality of circular holes 111 with different diameters are formed in the plating layer 11, and the diameter of the circular hole 111 is 1 to 5 nm.
In an embodiment of the present technical solution, a plurality of circular holes 111 with different diameters are formed in the coating layer 11, and the diameter of the circular hole 111 is 1-5 nm. When incident light and the light that reflects from reflection backplate 5 enter into round hole 111, round hole 111 in coating film layer 11 plays the effect of entrapment light, is favorable to transmitting more light to solar cell array 3 to further be favorable to more light to enter into photovoltaic module, promote the utilization ratio of subassembly to the sunlight more effectively.
In a further description, the upper surface of the plating layer 11 is a textured surface 112.
In an embodiment of the present disclosure, the upper surface of the film coating layer 11 is a textured surface 112, and the design of the textured surface 112 is beneficial to allowing more light to enter the film coating layer 11, so as to improve the utilization rate of the assembly to sunlight.
Furthermore, the refractive index of the coating layer 11 is 1.23-1.28%.
In an embodiment of the present technical solution, the refractive index of the coating layer 11 is 1.23 to 1.28%. Because the refractive index of the coating layer 11 in the technical scheme is lower, according to the fresnel law, the antireflection effect of the coating layer 11 under the oblique light condition is better than that under the direct light condition, and therefore, the arrangement of the coating layer 11 with the low refractive index is beneficial to reducing or eliminating the reflected light on the surface of the coating layer, so that the light transmission quantity of the photovoltaic module is increased.
Furthermore, the thickness of the coating layer 11 is 100 to 130 nm.
According to the technical scheme, the thickness of the coating layer 11 is limited to be 100-130 nm, so that the antireflection effect of the coating layer 11 is favorably ensured, the reflected light on the surface of the coating layer 11 is effectively reduced, and the light transmission quantity of the photovoltaic module is increased.
Further, the reflection back plate 5 has an oblique light reflectivity of 93% or more within a wavelength of 400-1200 nm.
In an embodiment of the present technical solution, because the reflective backplane 5 in the present technical solution has a high reflectivity, when oblique light irradiates the reflective backplane 5, more light rays can be reflected to the light trapping structure 121 located on the lower surface of the glass layer 12 and the circular hole 111 of the film coating layer 11, and after being reflected again, more oblique light rays can be transmitted to the surface of the solar cell array 3, thereby further facilitating more light rays to enter the photovoltaic module, and more effectively improving the utilization rate of the module to sunlight.
Furthermore, the height of the light trapping structure 121 on the upper surface of the glass layer is 0.01 to 0.05mm, and the center-to-center distance between the two light trapping structures 121 is 0.01 to 0.02 mm. As a preferred embodiment of the present technical solution, the height of the light trapping structure 121 on the upper surface of the glass layer is 0.01mm, and the distance between the centers of the two light trapping structures 121 is 0.02 mm.
Furthermore, the wavelength of the light which can penetrate through the upper EVA layer 2 is 280-1150 nm; the lower EVA layer 4 is an ultraviolet cut-off EVA layer, and the wavelength of light which can penetrate through the lower EVA layer 4 is 400-1150 nm.
In a further aspect, the coating layer 11 is SiO2And the glass layer 12 is made of ultra-white toughened glass.
Further, the solar cell array 3 includes cell pieces 31 and solder strips 32, the cell pieces 31 are P-type single crystal PERC cells, and the solder strips 32 are connected between the cell pieces 31.
The solar cell array 3 in the technical scheme comprises a cell 31 and a solder strip 32, wherein the cell 31 is a P-type single crystal PERC cell, and the P-type single crystal PERC cell has good low irradiation performance and is beneficial to further improving the overall power generation capacity of the photovoltaic module.
The technical principle of the present invention is described above in connection with specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without inventive effort, which would fall within the scope of the present invention.
Claims (10)
1. Crystalline silicon photovoltaic module with incident angle correction factor characterized in that: the solar cell array comprises coated glass, an upper EVA layer, a solar cell array, a lower EVA layer and a reflection back plate which are sequentially arranged from top to bottom; the coated glass comprises a coating layer and a glass layer which are arranged from top to bottom, and pyramid-shaped light trapping structures are arranged on the upper surface and the lower surface of the glass layer in a protruding mode.
2. The crystalline silicon photovoltaic module with incident angle correction factor of claim 1, wherein: a plurality of round holes with different diameters are formed in the coating layer, and the diameter of each round hole is 1-5 nm.
3. The crystalline silicon photovoltaic module with incident angle correction factor of claim 1, wherein: the upper surface of the coating layer is a suede surface.
4. The crystalline silicon photovoltaic module with incident angle correction factor of claim 1, wherein: the refractive index of the coating layer is 1.23-1.28%.
5. The crystalline silicon photovoltaic module with incident angle correction factor of claim 4, wherein: the thickness of the coating layer is 100-130 nm.
6. The crystalline silicon photovoltaic module with incident angle correction factor of claim 1, wherein: the reflection backboard has oblique light reflectivity of more than or equal to 93% within the wavelength of 400-1200 nm.
7. The crystalline silicon photovoltaic module with incident angle correction factor of claim 1, wherein: the height of the light trapping structure on the upper surface of the glass layer is 0.01-0.05 mm, and the center distance between the light trapping structures is 0.01-0.02 mm.
8. The crystalline silicon photovoltaic module having an incident angle correction factor of claim 7, wherein: the wavelength of light which can penetrate through the upper EVA layer is 280-1150 nm; the lower EVA layer is an ultraviolet cut-off EVA layer and can penetrate through the wavelength of light of the lower EVA layer to be 400-1150 nm.
9. The crystalline silicon photovoltaic module with incident angle correction factor of claim 1, wherein: the coating layer is SiO2And the glass layer is made of ultra-white toughened glass.
10. The crystalline silicon photovoltaic module with incident angle correction factor of claim 1, wherein: the solar cell array comprises cell pieces and welding strips, the cell pieces are P-type single crystal PERC cells, and the welding strips are connected between the cell pieces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011309940.0A CN112531044A (en) | 2020-11-20 | 2020-11-20 | Crystalline silicon photovoltaic module with incident angle correction factor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011309940.0A CN112531044A (en) | 2020-11-20 | 2020-11-20 | Crystalline silicon photovoltaic module with incident angle correction factor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112531044A true CN112531044A (en) | 2021-03-19 |
Family
ID=74981929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011309940.0A Pending CN112531044A (en) | 2020-11-20 | 2020-11-20 | Crystalline silicon photovoltaic module with incident angle correction factor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112531044A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117810275A (en) * | 2024-03-01 | 2024-04-02 | 季华实验室 | Photoelectric detector |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202594970U (en) * | 2012-01-17 | 2012-12-12 | 信义玻璃工程（东莞）有限公司 | Super white glass and solar cell |
| CN202839687U (en) * | 2012-09-12 | 2013-03-27 | 韩华新能源（启东）有限公司 | Intensifying photovoltaic assembly |
| CN205140998U (en) * | 2015-11-25 | 2016-04-06 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic module that sea water resistance corrodes |
| CN106653904A (en) * | 2017-01-03 | 2017-05-10 | 浚丰太阳能(江苏)有限公司 | Reflective photovoltaic module |
| CN110400849A (en) * | 2018-04-18 | 2019-11-01 | 上海西源新能源技术有限公司 | A kind of scattering coated glass backboard for the double glass photovoltaic modulies of generating electricity on two sides |
-
2020
- 2020-11-20 CN CN202011309940.0A patent/CN112531044A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202594970U (en) * | 2012-01-17 | 2012-12-12 | 信义玻璃工程（东莞）有限公司 | Super white glass and solar cell |
| CN202839687U (en) * | 2012-09-12 | 2013-03-27 | 韩华新能源（启东）有限公司 | Intensifying photovoltaic assembly |
| CN205140998U (en) * | 2015-11-25 | 2016-04-06 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic module that sea water resistance corrodes |
| CN106653904A (en) * | 2017-01-03 | 2017-05-10 | 浚丰太阳能(江苏)有限公司 | Reflective photovoltaic module |
| CN110400849A (en) * | 2018-04-18 | 2019-11-01 | 上海西源新能源技术有限公司 | A kind of scattering coated glass backboard for the double glass photovoltaic modulies of generating electricity on two sides |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117810275A (en) * | 2024-03-01 | 2024-04-02 | 季华实验室 | Photoelectric detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102544174B (en) | Solar cell assembly for increasing light energy utilization ratio | |
| CN204538042U (en) | A kind of double-sided solar battery assembly | |
| CN208970522U (en) | A kind of solar photovoltaic assembly | |
| CN111244213B (en) | Photovoltaic module | |
| CN101609851A (en) | Low concentrating device of solar battery | |
| CN112531044A (en) | Crystalline silicon photovoltaic module with incident angle correction factor | |
| CN113644156A (en) | Two-sided reflection of light photovoltaic solder strip and photovoltaic module | |
| CN205211772U (en) | High resistant photovoltaic module that waits | |
| CN201804881U (en) | Monocrystal high-power battery pack | |
| CN110534604A (en) | A kind of solar components encapsulating structure | |
| CN217641361U (en) | Photovoltaic packaging material and photovoltaic module | |
| CN205881925U (en) | Photovoltaic module of optics high -usage | |
| CN201956361U (en) | Antireflection system for film solar battery | |
| CN205385030U (en) | High -efficient photovoltaic dual glass assembly | |
| CN114678437A (en) | Photovoltaic module | |
| CN210156396U (en) | Solar module packaging structure | |
| CN210956695U (en) | Double-sided double-glass photovoltaic assembly | |
| CN208028077U (en) | A kind of generating electricity on two sides solar double-glass assemblies back-panel glass having both antireflective and high reflection | |
| CN209134343U (en) | A kind of double side photovoltaic battery device based on efficient imbrication technique | |
| CN111725342A (en) | High-absorptivity photovoltaic module | |
| CN101764171A (en) | Solar energy battery with reflection structure | |
| CN220934098U (en) | Colored double-glass photovoltaic module | |
| CN201430147Y (en) | Low power light gathering device of solar battery | |
| CN201758126U (en) | Light pollution preventive double-glass solar cell component | |
| CN216106716U (en) | High-reflection composite latticed packaging adhesive film and photovoltaic module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210319 |