CN112530854B - Semiconductor bearing device and semiconductor equipment - Google Patents
Semiconductor bearing device and semiconductor equipment Download PDFInfo
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- CN112530854B CN112530854B CN202110186772.9A CN202110186772A CN112530854B CN 112530854 B CN112530854 B CN 112530854B CN 202110186772 A CN202110186772 A CN 202110186772A CN 112530854 B CN112530854 B CN 112530854B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a semiconductor bearing device and semiconductor equipment, wherein the semiconductor bearing device comprises a base main body and a chuck body adhered to the base main body, the base main body is used for bearing the chuck body, the chuck body is used for bearing a workpiece to be processed, the chuck body comprises a bearing part and a shielding part, the bearing part is arranged on the base main body and is used for bearing the workpiece to be processed, an adhesive layer is arranged between the bearing part and the base main body, and the adhesive layer is used for adhering the bearing part and the base main body; the shielding part is arranged along the circumferential direction of the bearing part and extends to the peripheral wall covering the base main body along the direction close to the base main body, and is used for shielding the bonding layer between the bearing part and the base main body. The semiconductor bearing device and the semiconductor equipment provided by the invention can improve the corrosion resistance, thereby improving the bearing stability, prolonging the service life, reducing the generation of particles and improving the process effect of a semiconductor.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a semiconductor bearing device and semiconductor equipment.
Background
In current semiconductor equipment, an Electrostatic Chuck (ESC) is generally used to support a wafer (wafer) in a semiconductor process instead of a mechanical Chuck. This is because the electrostatic chuck can generate an electrostatic force with respect to the wafer supported thereon, so that the wafer can be adsorbed thereon, thereby preventing the wafer from moving in the semiconductor process.
The electrostatic chuck generally includes a chuck body and a susceptor, which are bonded to each other, wherein the susceptor is used to support the chuck body, and the chuck body is disposed on the susceptor to support a wafer and can attract the wafer by generating an electrostatic force with the wafer. However, in a semiconductor process, process gas is liable to corrode an adhesive layer between a susceptor and a chuck body, which may lead to poor adhesion of the chuck body on one hand and generation of particles on the other hand, thereby affecting semiconductor process effects.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a semiconductor bearing device and semiconductor equipment, which can improve the corrosion resistance, thereby improving the bearing stability, prolonging the service life, reducing the generation of particles and improving the process effect of a semiconductor.
The semiconductor bearing device comprises a base main body and a chuck body adhered to the base main body, wherein the base main body is used for bearing the chuck body, the chuck body is used for bearing a workpiece to be processed, the chuck body comprises a bearing part and a shielding part, the bearing part is arranged on the base main body and is used for bearing the workpiece to be processed, an adhesive layer is arranged between the bearing part and the base main body, and the adhesive layer is used for adhering the bearing part and the base main body;
the shielding part is along the circumference setting of bearing part to along being close to the direction of base main part extends to the cover the periphery wall of base main part is used for right the bearing part with between the base main part the adhesive linkage shelters from.
Preferably, a sealing structure is provided between the outer peripheral wall of the base main body and the shielding portion, and the sealing structure is used for sealing a gap between the outer peripheral wall of the base main body and the shielding portion.
Preferably, the seal structure includes a seal material and an annular receiving groove, wherein the receiving groove is provided along a circumferential direction of the outer circumferential wall of the base main body, and the seal material is filled in the receiving groove.
Preferably, the sealing material comprises a sealant.
Preferably, the axial section of the receiving groove is one or more of triangular, square and semicircular.
Preferably, the semiconductor bearing device further comprises a heating structure, wherein the heating structure is arranged between the bearing part and the base main body;
the bonding layer comprises a first bonding layer and a second bonding layer, wherein the first bonding layer is arranged between the heating structure and the base main body and used for bonding the heating structure and the base main body, and the second bonding layer is arranged between the heating structure and the bearing part and used for bonding the heating structure and the bearing part;
the shielding portion is used for shielding the first bonding layer and the second bonding layer.
Preferably, an annular first convex part is arranged on the base main body, the first convex part is arranged along the circumferential direction of the base main body and is located below the shielding part, and the upper surface of the first convex part is in contact with the lower surface of the shielding part.
Preferably, the semiconductor bearing device further comprises an annular blocking component, wherein an annular second convex part is arranged on the base main body, is arranged along the circumferential direction of the base main body, is positioned below the first convex part, and is used for bearing the blocking component;
the blocking component surrounds the shielding part and the first convex part and is arranged at intervals with the shielding part and the first convex part, and the blocking component can surround the workpiece to be processed carried on the carrying part and can have a gap with the workpiece to be processed.
Preferably, the blocking component comprises an annular first blocking part and an annular second blocking part, wherein the first blocking part is borne on the second convex part and surrounds the blocking part and the first convex part, the first blocking part is positioned below the workpiece to be machined and has a gap with the workpiece to be machined, and the inner diameter of the first blocking part is smaller than the outer diameter of the workpiece to be machined;
the second blocking part is arranged on the first blocking part and surrounds the periphery of the workpiece to be processed, and the inner diameter of the second blocking part is larger than the outer diameter of the workpiece to be processed.
Preferably, the bearing part and the shielding part are in an integrated U-shaped structure.
The invention also provides semiconductor equipment which comprises a process chamber and the semiconductor bearing device provided by the invention, wherein the semiconductor bearing device is arranged in the process chamber and is used for bearing the workpiece to be processed.
The invention has the following beneficial effects:
according to the semiconductor bearing device, the shielding part is used for shielding the bonding layer between the bearing part and the base main body, so that the probability that semiconductor process gas enters between the bearing part and the base main body and corrodes the bonding layer between the bearing part and the base main body can be reduced, the corrosion resistance can be improved, the failure probability of the bonding layer can be reduced, the probability that the bearing part and the base main body are not firmly bonded can be reduced, the bearing stability can be improved, the service life can be prolonged, the generation of particles can be reduced, and the semiconductor process effect can be improved.
According to the semiconductor equipment provided by the invention, the workpiece to be processed is loaded by the semiconductor loading device provided by the invention, so that the loading stability can be improved, the service life can be prolonged, the generation of particles can be reduced, and the process effect of a semiconductor can be improved.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor carrier device according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of a semiconductor bearing device provided with a heating structure according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a semiconductor carrier device provided with a barrier component according to an embodiment of the present invention;
FIG. 4 is a schematic view of semiconductor process gases flowing in a semiconductor carrier according to an embodiment of the present invention;
description of reference numerals:
11-a base body; 12-a chuck body; 121-a carrier; 122-a shield; 13-accommodating grooves; 14-a heating structure; 15-a first convex portion; 16-a second projection; 17-a blocking member; 171-a first barrier; 172-a second barrier; 18-an electrostatic electrode; 19-a workpiece to be machined; 20-an adhesive layer; 201-a first adhesive layer; 202-second adhesive layer.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the semiconductor carrying device and the semiconductor apparatus provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the present embodiment provides a semiconductor bearing device, which includes a base main body 11 and a chuck main body 12 adhered to the base main body 11, wherein the base main body 11 is used for bearing the chuck main body 12, the chuck main body 12 is used for bearing a workpiece 19 to be processed, the chuck main body 12 includes a bearing portion 121 and a shielding portion 122, the bearing portion 121 is disposed on the base main body 11 and is used for bearing the workpiece 19 to be processed, an adhesive layer 20 is disposed between the bearing portion 121 and the base main body 11, and the adhesive layer 20 is used for adhering the bearing portion 121 and the base main body 11; the shielding portion 122 is disposed along the circumferential direction of the bearing portion 121, and extends to cover the outer circumferential wall of the base main body 11 in a direction close to the base main body 11, so as to shield the adhesive layer 20 between the bearing portion 121 and the base main body 11.
The semiconductor bearing device provided by the embodiment can reduce the probability of corrosion of the bonding layer 20 between the bearing part 121 and the base main body 11 caused by the fact that the bearing part 121 and the base main body 11 are shielded by the shielding part 122, thereby improving the corrosion resistance, reducing the probability of failure of the bonding layer 20, reducing the probability of unfirm bonding between the bearing part 121 and the base main body 11, further improving the bearing stability, prolonging the service life, reducing the generation of particles and improving the semiconductor process effect.
As shown in fig. 1, the shielding portion 122 may be annular and may extend to the outer peripheral wall covering the base main body 11 in a direction close to the base main body 11, that is, the shielding portion 122 extends downward to the outer peripheral wall covering the base main body 11, such that the annular shielding portion 122 may cover the periphery of the adhesive layer 20 between the carrier portion 121 and the base main body 11, and the shielding portion 122 does not have a gap in a portion covering the adhesive layer 20 between the carrier portion 121 and the base main body 11, so that the shielding portion 122 may shield the adhesive layer 20 between the carrier portion 121 and the base main body 11, and the probability that the semiconductor process gas enters between the carrier portion 121 and the base main body 11 and corrodes the adhesive layer 20 between the carrier portion 121 and the base main body 11 is reduced.
As shown in fig. 1 and 2, in a preferred embodiment of the present invention, the supporting portion 121 and the shielding portion 122 may be an integral U-shaped structure.
In a preferred embodiment of the present invention, a sealing structure for sealing a gap between the outer peripheral wall of the base body 11 and the shielding portion 122 may be provided between the outer peripheral wall of the base body 11 and the shielding portion 122.
With the help of the sealing structure arranged between the peripheral wall of the base main body 11 and the shielding portion 122, the semiconductor process gas can be prevented from flowing between the bearing portion 121 and the base main body 11 through the gap between the peripheral wall of the base main body 11 and the shielding portion 122 to corrode the adhesive layer 20 between the bearing portion 121 and the base main body 11, so that the corrosion resistance can be further improved, the probability that the bearing portion 121 and the base main body 11 are not firmly connected is reduced, the bearing stability is further improved, the service life is prolonged, the generation of particles is reduced, and the semiconductor process effect is improved.
This is because, after the semiconductor process gas flows into the gap between the outer peripheral wall of the susceptor body 11 and the shielding portion 122, the sealing structure provided between the outer peripheral wall of the susceptor body 11 and the shielding portion 122 can seal the gap between the outer peripheral wall of the susceptor body 11 and the shielding portion 122, and therefore, the sealing structure blocks the semiconductor process gas, so that the semiconductor process gas cannot flow upward through the sealing structure, and thus, the semiconductor process gas can be prevented from flowing into the gap between the carrier portion 121 and the susceptor body 11 and corroding the adhesive layer 20 between the carrier portion 121 and the susceptor body 11.
As shown in fig. 1 to 3, in a preferred embodiment of the present invention, the sealing structure may include a sealing material (not shown) and a ring-shaped receiving groove 13, wherein the receiving groove 13 is provided along a circumferential direction of the outer circumferential wall of the base body 11, and the sealing material is filled in the receiving groove 13.
The sealing material is filled in the housing groove 13 to seal a gap between the outer peripheral wall of the base body 11 and the shielding portion 122, and to block the semiconductor process gas flowing between the outer peripheral wall of the base body 11 and the shielding portion 122. Moreover, since the receiving groove 13 can receive a large amount of sealing material, a gap between the outer peripheral wall of the base body 11 and the shielding portion 122 can have a large amount of sealing material, and since the semiconductor process gas may corrode the sealing material after flowing to the gap between the outer peripheral wall of the base body 11 and the shielding portion 122, by providing a large amount of sealing material in the gap between the outer peripheral wall of the base body 11 and the shielding portion 122, the time for the sealing material to seal the gap between the outer peripheral wall of the base body 11 and the shielding portion 122 can be increased, so that the corrosion resistance can be further increased, the probability of the carrier portion 121 being connected to the base body 11 poorly can be reduced, the carrier stability can be further increased, the service life can be prolonged, the generation of particles can be reduced, and the semiconductor process effect can be improved.
However, the receiving structure is not limited to this, and the receiving groove 13 may be provided along the circumferential direction of the inner circumferential wall of the shielding portion 122, for example.
In a preferred embodiment of the present invention, the sealing material may comprise a sealant.
In a preferred embodiment of the present invention, the axial section of the receiving groove 13 may have one or more of a triangular shape, a square shape and a semicircular shape. For example, as shown in fig. 1 to 3, the accommodating groove 13 has a triangular shape in axial cross section. However, the shape of the axial cross section of the accommodating groove 13 is not limited to this, and the accommodating groove 13 may be divided into a plurality of groove segments, and the shapes of the axial cross sections of the plurality of groove segments may be the same or different, so that the axial cross section of the accommodating groove 13 may be one or more of triangular, square, and semicircular.
As shown in fig. 2 and 3, in a preferred embodiment of the present invention, the semiconductor bearing device may further include a heating structure 14, the heating structure 14 being disposed between the bearing part 121 and the susceptor body 11; the adhesive layer 20 includes a first adhesive layer 201 and a second adhesive layer 202, wherein the first adhesive layer 201 is disposed between the heating structure 14 and the base main body 11 for adhering the heating structure 14 and the base main body 11, and the second adhesive layer 202 is disposed between the heating structure 14 and the bearing part 121 for adhering the heating structure 14 and the bearing part 121; the shielding portion 122 is used to shield the first adhesive layer 201 and the second adhesive layer 202.
The heating structure 14 may heat the workpiece 19 to be processed carried on the carrier 121 by heating the carrier 121, so that the temperature of the workpiece 19 to be processed reaches the semiconductor process temperature.
As shown in fig. 2 and 3, the heating structure 14 is disposed between the carrier portion 121 and the base main body 11, and since the shielding portion 122 covers the periphery of the adhesive layer 20 between the carrier portion 121 and the base main body 11, and the shielding portion 122 does not have a gap in the portion where the shielding portion 122 covers the adhesive layer 20 between the carrier portion 121 and the base main body 11, the shielding portion 122 also covers the periphery of the second adhesive layer 202 between the heating structure 14 and the carrier portion 121, and the periphery of the first adhesive layer 201 between the heating structure 14 and the base main body 11, and the shielding portion 122 covers the second adhesive layer 202 between the heating structure 14 and the carrier portion 121, and the portion where the first adhesive layer 201 between the heating structure 14 and the base main body 11 does not have a gap, the second adhesive layer 202 between the heating structure 14 and the carrier portion 121, and the first adhesive layer 201 between the heating structure 14 and the base main body 11 can be shielded by the shielding portion 122, the semiconductor process gas is prevented from entering the space between the heating structure 14 and the bearing part 121 and entering the space between the heating structure 14 and the base main body 11, the probability of corrosion to the second bonding layer 202 between the heating structure 14 and the bearing part 121 and the probability of corrosion to the first bonding layer 201 between the heating structure 14 and the base main body 11 are reduced, the corrosion resistance can be improved, the probability of insecure connection between the bearing part 121 and the heating structure 14 is reduced, the bearing stability is improved, the temperature control stability is improved, the service life is prolonged, particulate matters are reduced, and the semiconductor process effect is improved.
Alternatively, the first adhesive layer 201 may include a plane glue layer.
Alternatively, the second adhesive layer 202 may include a plane glue layer.
As shown in fig. 1-3, in a preferred embodiment of the present invention, an annular first protrusion 15 may be disposed on the base main body 11, the first protrusion 15 is disposed along a circumferential direction of the base main body 11 and is located below the shielding portion 122, and an upper surface of the first protrusion 15 contacts a lower surface of the shielding portion 122.
Due to the design, the semiconductor process gas needs to flow to the gap between the outer peripheral wall of the susceptor body 11 and the shielding portion 122 through the gap between the upper surface of the first protruding portion 15 and the lower surface of the shielding portion 122, and the flow direction needs to be changed in the process of flowing from the gap between the upper surface of the first protruding portion 15 and the lower surface of the shielding portion 122 to the gap between the outer peripheral wall of the susceptor body 11 and the shielding portion 122, so that the probability that the semiconductor process gas enters the gap between the outer peripheral wall of the susceptor body 11 and the shielding portion 122 can be reduced, and the probability that the semiconductor process gas enters the gap between the bearing portion 121 and the susceptor body 11 and corrodes the adhesive layer 20 between the bearing portion 121 and the susceptor body 11 can be further reduced. Further, when the sealing material is provided between the outer peripheral wall of the susceptor body 11 and the shielding portion 122, the probability that the semiconductor process gas enters between the outer peripheral wall of the susceptor body 11 and the shielding portion 122 and corrodes the sealing material between the outer peripheral wall of the susceptor body 11 and the shielding portion 122 can be reduced, and the probability that the semiconductor process gas enters between the carrier portion 121 and the susceptor body 11 and corrodes the adhesive layer 20 between the carrier portion 121 and the susceptor body 11 can be further reduced.
As shown in fig. 3 and 4, in a preferred embodiment of the present invention, the semiconductor carrying device may further include an annular blocking member 17, the base body 11 is provided with an annular second protrusion 16, the second protrusion 16 is disposed along the circumferential direction of the base body 11 and is located below the first protrusion 15 for carrying the blocking member 17; the blocking member 17 surrounds the shielding portion 122 and the first protruding portion 15 and is disposed at a distance from the shielding portion 122 and the first protruding portion 15, and the blocking member 17 can surround the workpiece 19 to be processed carried on the carrying portion 121 and can have a gap with the workpiece 19 to be processed.
Because the blocking member 17 surrounds the shielding portion 122 and the first protruding portion 15 and is spaced from the shielding portion 122 and the first protruding portion 15, and the blocking member 17 can surround the workpiece 19 to be processed carried on the carrying portion 121 and can have a gap with the workpiece 19 to be processed, the design enables the semiconductor process gas to flow to the gap between the upper surface of the first protruding portion 15 and the lower surface of the shielding portion 122 only through the gap between the blocking member 17 and the workpiece 19 to be processed and then through the gap between the blocking member 17 and the shielding portion 122 and the first protruding portion 15, so that the flow rate of the semiconductor process gas flowing to the gap between the upper surface of the first protruding portion 15 and the lower surface of the shielding portion 122 can be reduced, thereby reducing the probability of the semiconductor process gas entering the gap between the outer peripheral wall of the base body 11 and the shielding portion 122, further, the possibility that the semiconductor process gas enters between the carrier part 121 and the susceptor body 11 and corrodes the adhesive layer 20 between the carrier part 121 and the susceptor body 11 can be further reduced.
And, this can be matched with the outer contour of the workpiece to be processed 19 carried on the carrier part 121 by means of the inner contour of the blocking member 17, for blocking the semiconductor process gas entering between the blocking member 17 and the shielding part 122 and the first convex part 15 through the gap between the blocking member 17 and the workpiece to be processed 19. By means of the inner contour of the blocking element 17 matching the outer contour of the workpiece 19 to be machined carried on the carrier 121, the semiconductor process gas that enters between the blocking member 17 and the shielding portion 122 and the first convex portion 15 through the gap between the blocking member 17 and the workpiece 19 to be processed is blocked, the probability of the semiconductor process gas flowing between the barrier member 17 and the shielding portion 122 and the first convex portion 15 can be further reduced, so that the probability of the semiconductor process gas entering between the upper surface of first projection 15 and the lower surface of shielding portion 122 can be further reduced, so that the probability of the semiconductor process gas entering between the peripheral wall of the susceptor body 11 and the shielding portion 122 can be further reduced, thereby further reducing the ingress of semiconductor process gases between the carrier portion 121 and the susceptor body 11, the adhesive layer 20 between the bearing portion 121 and the base main body 11 is corroded.
As shown in fig. 3 and 4, in a preferred embodiment of the present invention, the blocking member 17 may include a first blocking portion 171 in a ring shape and a second blocking portion 172 in a ring shape, wherein the first blocking portion 171 is carried on the second protruding portion 16 and surrounds the shielding portion 122 and the first protruding portion 15, the first blocking portion 171 is located below the workpiece 19 to be processed and has a gap with the workpiece 19 to be processed, and an inner diameter of the first blocking portion 171 is smaller than an outer diameter of the workpiece 19 to be processed; the second stopper 172 is provided on the first stopper 171 and surrounds the workpiece 19 to be machined, and the inner diameter of the second stopper 172 is larger than the outer diameter of the workpiece 19 to be machined.
In the semiconductor process, the semiconductor process gas can flow between the upper surface of the first protrusion 15 and the lower surface of the shielding portion 122 only after entering the gap between the second shielding portion 172 and the workpiece 19 to be processed, passing through the gap between the workpiece 19 to be processed and the first shielding portion 171, and passing through the gap between the first shielding portion 171 and the shielding portion 122 and the first protrusion 15. Moreover, since the inner diameter of the first blocking portion 171 is smaller than the outer diameter of the workpiece 19 to be processed, and the inner diameter of the second blocking portion 172 is larger than the outer diameter of the workpiece 19 to be processed, the first blocking portion 171 protrudes toward the shielding portion 122 and the first protrusion 15 with respect to the second blocking portion 172, so that the semiconductor process gas can be blocked by the first blocking portion 171, the flow direction of the semiconductor process gas must be changed (as shown by the arrow in fig. 4) after the semiconductor process gas passes through the gap between the second blocking portion 172 and the workpiece 19 to be processed, and the flow direction of the semiconductor process gas must be changed again (as shown by the arrow in fig. 4) after the semiconductor process gas passes through the gap between the first blocking portion 171 and the shielding portion 122 and the first protrusion 15 by blocking the semiconductor process gas by the shielding portion 122, can enter the gap between the first blocking portion 171 and the shielding portion 122 and the first protrusion 15, and can finally flow between the upper surface of the first protrusion 15 and the lower surface of the shielding portion 122, so that the flow rate of the semiconductor process gas flowing between the upper surface of the first protrusion 15 and the lower surface of the shielding portion 122 can be reduced.
As shown in fig. 1-3, an electrostatic electrode 18 may be disposed in the supporting portion 121, the electrostatic electrode 18 may be electrically connected to a power supply device, and when the electrostatic electrode 18 is powered on, an electrostatic force may be generated between the electrostatic electrode 18 and the workpiece 19 to be processed carried on the supporting portion 121, so as to attach the workpiece 19 to be processed to the supporting portion 121. That is, when the power supply device supplies power to the electrostatic electrode 18, the electrostatic electrode 18 can generate electrostatic force between the workpieces 19 to be processed, and the workpieces 19 to be processed can be attracted to the bearing part 121 by the electrostatic force, so that the workpieces 19 to be processed are prevented from moving in the semiconductor process, thereby improving bearing stability and improving semiconductor process effect.
As another technical solution, an embodiment of the present invention further provides a semiconductor apparatus, which includes a process chamber and a semiconductor carrying device provided in the embodiment of the present invention, wherein the semiconductor carrying device is disposed in the process chamber and is used for carrying a workpiece to be processed.
According to the semiconductor equipment provided by the embodiment of the invention, the semiconductor bearing device provided by the embodiment of the invention is used for bearing a workpiece to be processed, so that the bearing stability can be improved, the service life is prolonged, the generation of particles is reduced, and the process effect of a semiconductor is improved.
In summary, the semiconductor bearing device and the semiconductor equipment provided by the embodiment of the invention can improve the corrosion resistance, thereby improving the bearing stability, prolonging the service life, reducing the generation of particles and improving the semiconductor process effect.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (7)
1. A semiconductor bearing device comprises a base main body and a chuck body adhered to the base main body, wherein the base main body is used for bearing the chuck body, and the chuck body is used for bearing a workpiece to be processed;
the shielding part is arranged along the circumferential direction of the bearing part, extends to the outer circumferential wall covering the base main body along the direction close to the base main body and is used for shielding the bonding layer between the bearing part and the base main body;
a sealing structure is arranged between the peripheral wall of the base main body and the shielding part and is used for sealing a gap between the peripheral wall of the base main body and the shielding part so as to block the semiconductor process gas; and the number of the first and second electrodes,
the base main body is provided with an annular first convex part, the first convex part is arranged along the circumferential direction of the base main body and is positioned below the shielding part, and the upper surface of the first convex part is in contact with the lower surface of the shielding part;
the semiconductor bearing device also comprises an annular blocking component, wherein an annular second convex part is arranged on the base main body, is arranged along the circumferential direction of the base main body and is positioned below the first convex part and used for bearing the blocking component;
the blocking component surrounds the shielding part and the first convex part and is arranged at intervals with the shielding part and the first convex part, and the blocking component can surround the workpiece to be processed carried on the carrying part and can have a gap with the workpiece to be processed;
the blocking component comprises an annular first blocking part and an annular second blocking part, wherein the first blocking part is borne on the second convex part and surrounds the shielding part and the first convex part, the first blocking part is positioned below the workpiece to be machined, a gap is reserved between the first blocking part and the workpiece to be machined, and the inner diameter of the first blocking part is smaller than the outer diameter of the workpiece to be machined;
the second blocking part is arranged on the first blocking part and surrounds the periphery of the workpiece to be processed, and the inner diameter of the second blocking part is larger than the outer diameter of the workpiece to be processed.
2. The semiconductor carrier device according to claim 1, wherein the sealing structure includes a sealing material and an annular receiving groove, wherein the receiving groove is provided along a circumferential direction of an outer circumferential wall of the base body, and the sealing material is filled in the receiving groove.
3. The semiconductor carrier device of claim 2, wherein the encapsulant material comprises a sealant.
4. The semiconductor carrier device as claimed in claim 2, wherein the axial cross-section of the receiving groove is one or more of triangular, square and semicircular.
5. The semiconductor carrier device of claim 1, further comprising a heating structure disposed between the carrier and the susceptor body;
the bonding layer comprises a first bonding layer and a second bonding layer, wherein the first bonding layer is arranged between the heating structure and the base main body and used for bonding the heating structure and the base main body, and the second bonding layer is arranged between the heating structure and the bearing part and used for bonding the heating structure and the bearing part;
the shielding portion is used for shielding the first bonding layer and the second bonding layer.
6. The semiconductor carrier device according to claim 1, wherein the carrier portion and the shielding portion are of an integral U-shaped structure.
7. A semiconductor device comprising a process chamber and the semiconductor carrier of any one of claims 1-6, wherein the semiconductor carrier is disposed in the process chamber and is configured to carry the workpiece to be processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110186772.9A CN112530854B (en) | 2021-02-18 | 2021-02-18 | Semiconductor bearing device and semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110186772.9A CN112530854B (en) | 2021-02-18 | 2021-02-18 | Semiconductor bearing device and semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112530854A CN112530854A (en) | 2021-03-19 |
| CN112530854B true CN112530854B (en) | 2022-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110186772.9A Active CN112530854B (en) | 2021-02-18 | 2021-02-18 | Semiconductor bearing device and semiconductor equipment |
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| CN (1) | CN112530854B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4458995B2 (en) * | 2004-09-10 | 2010-04-28 | 京セラ株式会社 | Wafer support member |
| CN105531810A (en) * | 2013-09-16 | 2016-04-27 | 株式公司品维斯 | Electrostatic chuck and method for manufacturing electrostatic chuck |
| CN109698108A (en) * | 2017-10-20 | 2019-04-30 | 细美事有限公司 | Substrate board treatment and its component |
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| JP5331580B2 (en) * | 2008-07-02 | 2013-10-30 | 日本碍子株式会社 | Wafer mounting apparatus and parts used therefor |
| US9859142B2 (en) * | 2011-10-20 | 2018-01-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
| US10622239B2 (en) * | 2015-03-31 | 2020-04-14 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
| KR102540912B1 (en) * | 2015-08-27 | 2023-06-08 | 스미토모 오사카 세멘토 가부시키가이샤 | electrostatic chuck device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4458995B2 (en) * | 2004-09-10 | 2010-04-28 | 京セラ株式会社 | Wafer support member |
| CN105531810A (en) * | 2013-09-16 | 2016-04-27 | 株式公司品维斯 | Electrostatic chuck and method for manufacturing electrostatic chuck |
| CN109698108A (en) * | 2017-10-20 | 2019-04-30 | 细美事有限公司 | Substrate board treatment and its component |
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