CN112527204A - Storage method and device - Google Patents
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- 238000005192 partition Methods 0.000 claims abstract description 134
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- 239000004065 semiconductor Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0683—Plurality of storage devices
- G06F3/0688—Non-volatile semiconductor memory arrays
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0604—Improving or facilitating administration, e.g. storage management
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
- G06F3/0652—Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0662—Virtualisation aspects
Abstract
The invention relates to a storage method and a storage device, which are applied to a flash memory device, wherein the flash memory device is provided with a plurality of layers of storage units, and the method comprises the following steps: converting a preset area in a multilayer storage unit into a virtual single-layer storage unit; the area where the virtual single-layer storage unit is located is a virtual single-layer storage unit partition; at least one part of the remaining area in the multilayer memory unit is not converted, and the remaining part of the area is a multilayer memory unit partition; writing user data in the virtual single-layer storage unit partition; and backing up key data in the user data in the multi-layer storage unit partition. The storage method is low in cost, and can avoid the loss or cyclic coverage of the key data and ensure the safety of the key data, so that the evidence can be successfully obtained after a key accident.
Description
Technical Field
The present invention relates to the field of storage technologies, and in particular, to a storage method and apparatus.
Background
The NAND Flash memory (NAND Flash) is a nonvolatile storage medium, the NAND Flash memory basic memory Cell (Cell) is a kind of N-type Metal-Oxide-Semiconductor (NMOS, N-Metal-Oxide-Semiconductor) double-layer Floating Gate field effect (MOS, MOSFET) transistor, except the Floating Gate Flash (FGF) technology, also a Charge trapping Flash (CTF, Charge Trap Flash) technology. A NAND flash memory in which one memory Cell stores 1 bit (bit) data is a Single Level Cell (SLC), a NAND flash memory in which one memory Cell stores 2bit data is a double Level Cell (MLC), and a NAND flash memory in which one memory Cell stores 3bit data is a Triple Level Cell. SLC memory cells can last hundreds of times longer than TLC memory cells, but are expensive.
TLC can be switched to SLC mode by setting the mode of storage, which we refer to as a virtual Single Level Cell (pSLC). The case of mixed use of pSLC and TLC is called Hybrid Memory. The pSLC mode is faster and more stable than the TLC mode. But the effective storage capacity in pSLC mode becomes smaller. Therefore, a small portion of the area may be allocated in the TLC storage and switched to pSLC mode as a cache for speed-up purposes, thereby improving performance. The buffer area of the pSLC mode is not too large based on the consideration of the effective storage capacity.
The embedded Memory emmc (embedded Multi Media card) internally performs partition management of a Flash Memory (Flash Memory). In the eMMC standard, an attribute of Enhanced attribute (Enhanced attribute) is defined for a partition. In an actual product, a partition for setting an Enhanced attribute is generally set as pSLC, and the Enhanced attribute Area (Enhanced attribute Area) can be programmed only once in a device life cycle, so as to improve read-write performance, life and stability of the partition.
In the scenario of write-through application, the eMMC storage used by the vehicle-mounted automobile data recorder is used for illustration, and in the conventional technology, a small amount of pSLC area is generally allocated and set as an enhanced attribute, and the pSLC area can only be written once (only write once) and is mainly used for storing some specific read-only data. The Data recorded by the automobile Data recorder are stored in a User Data Area (User Data Area) partition of the TLC.
However, the most common recording mode after the automobile data recorder is full of storage is loop recording, and the newly generated hot data can cover the original cold data and continuously loop, so that the situation of insufficient storage capacity cannot occur. However, such a recording method has a disadvantage in that the storage of new hot data overwrites the original cold data, that is, the original cold data is lost as new hot data is added.
The automobile data recorder user usually cares about the complete data recorded by the automobile data recorder under the relevant conditions of impact, porcelain collision and the like. When the user reads the data stored in the automobile data recorder after the accident, the accident-related data may be covered by the new hot data, so that the evidence obtaining of the accident data fails.
In order to solve the problem of the accident data loss, a dual storage scheme of eMMC combined with Secure Digital (SD)/micro Secure Digital (microSD) is adopted in the conventional technology, but the scheme inevitably brings about an increase in cost.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a storage method and apparatus.
A storage method applied to a flash memory device having a plurality of layers of memory cells, the method comprising:
converting a preset area in the multilayer storage unit into a virtual single-layer storage unit; the area where the virtual single-layer storage unit is located is a virtual single-layer storage unit partition; at least one remaining part of the area in the multilayer memory unit is not converted, and the remaining part of the area is a multilayer memory unit partition;
writing user data in the virtual single-layer storage unit partition; and
and backing up key data in the user data in the multi-layer storage unit partition.
According to the storage method, the preset area in the multilayer storage unit is converted into the virtual single-layer storage unit, the cost is reduced compared with the traditional double-storage scheme, and the key data are backed up from the virtual single-layer storage unit partition to the multi-storage unit partition, so that the key data can be prevented from being lost or being circularly covered, the safety of the key data is ensured, and the evidence can be successfully obtained after a key accident.
In one embodiment, the method further comprises acquiring the capacity of the virtual single-layer storage unit partition;
determining the size of a converted area in the multi-layer storage unit according to the capacity of the virtual single-layer storage unit partition, and converting the converted area into the virtual single-layer storage unit;
the capacity X of the virtual single-layer memory cell partition meets the requirement (S T)MIN)＜X＜(S*TMAX)；
Where S is the write code rate, TMINFor the shortest duration, T, of said user data to be storedMAXThe user data to be stored is the longest.
In one embodiment, the virtual single-layer storage unit partition can be repeatedly read and written for a plurality of times.
In one embodiment, the writing of user data in the virtual single-layer storage unit partition includes:
writing the user data in the virtual single-layer storage unit partition;
judging whether the virtual single-layer storage unit partition is full;
if so, deleting a section of data stored in the virtual single-layer storage unit partition at first, erasing a corresponding storage block to store new user data, and continuously executing the step of writing the user data in the virtual single-layer storage unit partition;
if not, continuing to execute the step of writing the user data in the virtual single-layer storage unit partition.
In one embodiment, the backing up critical data in the user data in the multi-tiered storage unit partition includes:
judging whether a key accident occurs;
if yes, copying the key data to the multi-layer storage unit partition;
judging whether the key data is copied successfully;
if not, continuing to execute the step of copying the key data to the multi-layer storage unit partition.
In one embodiment, the multi-level memory cell includes a dual-level memory cell, a tri-level memory cell, or a quad-level memory cell.
In one embodiment, the flash memory device includes an eMMC, SD, NM, or SSD.
In one embodiment, the flash memory device is applied to a vehicle data recorder, and the key data comprises data of automobile collision and accident sudden braking.
A storage apparatus applied to a flash memory device having a plurality of layers of memory cells, the conversion apparatus comprising:
the conversion module is used for converting a preset area in the multilayer storage unit into a virtual single-layer storage unit; the area where the virtual single-layer storage unit is located is a virtual single-layer storage unit partition; at least one remaining part of the area in the multilayer memory unit is not converted, and the remaining part of the area is a multilayer memory unit partition;
the writing module is used for writing user data in the virtual single-layer storage unit partition; and
and the backup module is used for carrying out partition backup on key data in the user data in the multilayer storage unit.
According to the storage device, the preset area in the multilayer storage unit is converted into the virtual single-layer storage unit, the cost is reduced compared with the traditional double-storage scheme, the key data are backed up to the multi-storage unit partition from the virtual single-layer storage unit partition, the key data can be prevented from being lost or being circularly covered, the safety of the key data is ensured, and the evidence can be successfully obtained after the key accident.
In one embodiment, the system further comprises an obtaining module, configured to obtain a capacity of the virtual single-layer storage unit partition;
the conversion module determines the size of a converted area in the multilayer storage unit according to the capacity of the virtual single-layer storage unit partition and converts the converted area into the virtual single-layer storage unit;
the capacity X of the virtual single-layer memory cell partition meets the requirement (S T)MIN)＜X＜(S*TMAX)；
Where S is the write code rate, TMINFor the shortest duration, T, of said user data to be storedMAXFor the user needing to storeThe data is longest.
Drawings
FIG. 1 is a flow diagram of a storage method in one embodiment;
FIG. 2 is a schematic diagram of a partition of a medium flash memory device in one embodiment;
FIG. 3 is a flowchart illustrating specific steps performed in step S12 for writing user data in a virtual single-layer memory cell partition in one embodiment;
FIG. 4 is a flowchart illustrating specific steps of step S13 in backing up key data in user data in a multi-tiered storage unit partition, according to an embodiment;
FIG. 5 is a block diagram of a memory device in an embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The application provides a storage method which can solve the problem that the evidence obtaining fails due to the fact that key data are lost, and meanwhile cost can be reduced. FIG. 1 is a flow diagram of a storage method in one embodiment. As shown in fig. 1, the storage method is applied to a flash Memory device, the flash Memory device has multiple layers of storage units, the flash Memory device may include eMMC, SD, NM (Nano Memory Card), or Solid State Disk (SSD), and the like, the multiple layers of storage units include two-layer storage units, three-layer storage units, or four-layer storage units (QLC, Quad Level Cell), and the like, and the storage method includes:
in step S11, the predetermined area in the multi-layer memory cell is converted into a virtual single-layer memory cell.
Specifically, referring to fig. 2, a preset area in the multi-layer memory cell is converted into a virtual single-layer memory cell by setting a storage mode, the area of the virtual single-layer memory cell is a virtual single-layer memory cell (pSLC) partition 22, and the virtual single-layer memory cell partition 22 is used for storing written user data, for example, a partial area may be defined in the virtual single-layer memory cell partition 22 as a user data area, and the user data may be stored in the user data area. When the preset area in the multi-layer storage unit is converted into the virtual single-layer storage unit, the capacity of the finally formed virtual single-layer storage unit partition 22 can be measured and calculated through an optimization algorithm, so that the internal space of the multi-layer storage unit is reasonably distributed.
The virtual single-layer memory cell (pSLC) partition 21 may be formed by converting another area of the multi-layer memory cell into a virtual single-layer memory cell according to a mode setting of the storage, and the virtual single-layer memory cell partition 21 is used for storing metadata such as a File System (File System) and a File Allocation Table (FAT).
At least a part of the remaining area of the multi-level cell is not converted, and the remaining part of the area is a multi-level cell partition (TLC)23, and the multi-level cell partition 23 is used for storing a backup of the critical data. The critical data is data of a critical accident, for example, when the flash memory device is applied to a drive recorder, the critical data may include data of a car collision, an accident emergency brake, and the like. When no critical accident occurs, the multi-layer storage unit partition 23 does not store data, i.e. does not perform backup operation; when a critical failure occurs, critical data is backed up and stored in the multi-layered storage unit partition 23.
In step S12, user data is written in the virtual single-layer memory cell partition.
Specifically, still taking the application of the flash memory device to the car data recorder as an example, the user data may include information data such as road surface conditions in or around the car, sound in the car, acceleration, steering, and braking of the car. The external controller writes the user data directly to the virtual single-layer memory cell partition 22 when doing a write operation.
Alternatively, the virtual single-layer memory cell partition 22 may be repeatedly read and written. Based on the consideration of the effective storage capacity, the capacity of the virtual single-layer storage unit partition 22 is not too large, and new driving data, that is, new user data, is generated continuously in the driving recording process, so that new hot data can overwrite original cold data after the virtual single-layer storage unit partition 22 is fully written in a circulating recording mode, and recording of new driving recording data can be ensured. In this embodiment, the virtual single-layer storage unit partition 22 can repeatedly read and write for multiple times to distinguish the virtual single-layer storage unit partition which can only be written in once and has enhanced attributes in the conventional technology, so that the storage read-write performance, the service life and the stability can be greatly improved, and the readable and writable virtual single-layer storage unit partition 22 can also enhance the power-off protection and improve the high-low temperature tolerance of storage.
In step S13, the key data in the user data is backed up in the multi-layered storage unit partition.
Specifically, since the critical data is not generated when the critical accident does not occur, the backup operation of step S13 may not be performed, and step S13 may be performed when the critical data is generated after the critical accident occurs. The key accidents are defined by the system, for example, when the flash memory device is applied to a vehicle event recorder, the key accidents can be defined to include automobile collision, accident emergency braking and the like. A gravity sensor (G-sensor) may be installed at a designated location on the vehicle, and when the vehicle is collided, suddenly braked, etc., the gravity sensor is triggered, and then the critical data is backed up from the virtual single-layer storage unit partition 22 to the multi-layer storage unit partition 23. The critical data may intercept data written into the virtual single-layer memory cell partition 22 within a preset time period before and after triggering the gravity sensor.
According to the storage method, the preset area in the multilayer storage unit is converted into the virtual single-layer storage unit, the cost is reduced compared with the traditional double-storage scheme, and the key data are backed up from the virtual single-layer storage unit partition 22 to the multi-storage unit partition 23, so that the key data can be prevented from being lost or circularly covered, the safety of the key data is ensured, and the evidence can be successfully obtained after a key accident.
In one embodiment, the storage method further comprises the step of obtaining the capacity of the virtual single-layer storage unit partition.
Specifically, the capacity X of the virtual single-layer memory cell partition 22 satisfies (S × T)MIN)＜X＜(S*TMAX)。
Where S is the write code rate, TMINFor storing user dataShort duration, TMAXThe user data to be stored is longest.
In this embodiment, the size of the converted area in the multi-layer memory cell is determined according to the capacity of the virtual single-layer memory cell partition 22, and is converted into a virtual single-layer memory cell. The optimization algorithm in this embodiment is used to measure and calculate the capacity of the finally formed virtual single-layer memory cell partition 22, so as to reasonably allocate the internal space of the multi-layer memory cell.
FIG. 3 is a flowchart illustrating a specific step of writing user data in the virtual single-layer storage cell partition in step S12 according to an embodiment. As shown in fig. 3, this step specifically includes steps S121 to S123.
In step S121, user data is written in the virtual single-layer memory cell partition.
Specifically, still taking the application of the flash memory device to the car data recorder as an example, the user data may include information data such as road surface conditions in or around the car, sound in the car, acceleration, steering, and braking of the car. The external controller may continuously write the user data into the virtual single-layer memory cell partition 22 according to a certain code rate during the write operation. Data written to the virtual single-layer memory cell partition 22 may be persisted until the virtual single-layer memory cell partition 22 is full.
Step S122, determine whether the virtual single-layer memory cell partition is full. If yes, go back to step S121 after step S123; if not, the process returns to step S121.
Step S123, delete a segment of data stored first in the virtual single-layer memory unit partition and erase the corresponding memory block to store new user data.
Specifically, the space based on the virtual single-layer storage unit partition 22 is not too large, and the virtual single-layer storage unit partition can be repeatedly read and written for many times, so that the situation that new user data cannot be written after the virtual single-layer storage unit partition 22 is fully written is avoided. Firstly, judging whether the virtual single-layer storage unit partition 22 is full, if not, writing new user data into the virtual single-layer storage unit partition normally; if the virtual single-layer memory cell partition 22 is full, deleting a segment of data stored first in the virtual single-layer memory cell partition 22, that is, data with the longest storage time, where the length of the deleted data may be determined according to the length of the new user data, erasing the corresponding memory block to reserve a certain storage space for the new user data, and writing the new user data in the reserved storage space of the virtual single-layer memory cell partition 22.
In this embodiment, the circular write function can avoid the problem of insufficient storage space, and since the data stored in the virtual single-layer storage unit partition 22 is a persistent cache, even if a power failure occurs, the data can be ensured not to be lost to a greater extent, and the write operation speed of the pSLC mode is far better than that of the TLC write operation. In the application scene of the vehicle-mounted automobile data recorder, an extremely high and low temperature working environment may exist, and the pSLC has more excellent high and low temperature resistance than TLC, so that the pSLC mode can better ensure successful writing and safe storage of user data.
It should be noted that, in this embodiment, the write-full is not necessarily called write-full without any free space, and a ratio value Y% of the free space of one virtual single-layer storage unit partition 22 to the space X of all virtual single-layer storage unit partitions 22 may also be set, and when an actual ratio of the free space of one virtual single-layer storage unit partition 22 to the space X of all virtual single-layer storage unit partitions 22 is less than Y%, the circular write function is started.
FIG. 4 is a flowchart illustrating steps of step S13 in backing up key data in user data in a multi-tiered storage unit partition, according to an embodiment. As shown in fig. 4, this step specifically includes step S131 to step S133.
And step S131, judging whether a key accident occurs. If yes, go to step S132.
Step S132, copying the key data to the multi-layer memory cell partition.
Step S133, determine whether the copying is successful. If not, the process returns to step S131.
Specifically, whether a critical accident occurs is judged, and if the critical accident does not occur, no critical data is generated, so that backup operation does not need to be executed. And if the critical accident occurs, generating critical data, copying the critical data from the virtual single-layer storage unit partition 22 to the multi-layer storage unit partition 23 for backup, judging whether the copying is successful, and if the copying is not successful, continuing to execute the step of copying the critical data to the multi-layer storage unit partition 23 until the copying is successful, thereby ensuring the successful backup of the critical data.
The application also provides a storage device. As shown in fig. 5, the storage apparatus is applied to a flash memory device having a plurality of layers of memory cells, and the storage apparatus 50 includes a conversion module 51, a write module 52, and a backup module 53.
The conversion module 51 is configured to convert a preset region in a multi-layer memory cell into a virtual single-layer memory cell; the area where the virtual single-layer storage unit is located is a virtual single-layer storage unit partition; at least a part of the remaining area in the multi-layer memory unit is not converted, and the remaining part of the area is a multi-layer memory unit partition. The writing module 52 is configured to write user data in the virtual single-layer storage unit partition. The backup module 53 is used for backing up key data in the user data in the multi-layered storage unit partition.
According to the storage device, the preset area in the multilayer storage unit is converted into the virtual single-layer storage unit, the cost is reduced compared with the traditional double-storage scheme, the key data are backed up to the multi-storage unit partition from the virtual single-layer storage unit partition, the key data can be prevented from being lost or being circularly covered, the safety of the key data is ensured, and the evidence can be successfully obtained after the key accident.
In one embodiment, the storage device 50 further comprises an obtaining module (not shown) for obtaining the capacity of the virtual single-layer storage unit partition. The conversion module determines the size of a converted area in the multilayer storage unit according to the capacity of the virtual single-layer storage unit partition and converts the converted area into a virtual single-layer storage unit; capacity X of virtual single-layer memory cell partition satisfies (S T)MIN)＜X＜(S*TMAX)；
Where S is the write code rate, TMINFor the shortest duration of user data to be stored, TMAXThe user data to be stored is longest.
In one embodiment, the virtual single-layer memory cell partition can be repeatedly read and written.
In one embodiment, the write module 52 performs the steps of:
writing user data in the virtual single-layer storage unit partition;
judging whether the virtual single-layer storage unit partition is full;
if so, deleting a section of data stored in the virtual single-layer storage unit partition at first, erasing a corresponding storage block to store new user data, and continuously executing the step of writing the user data in the virtual single-layer storage unit partition;
if not, continuing to execute the step of writing the user data in the virtual single-layer storage unit partition.
In one embodiment, backup module 53 performs the following steps:
judging whether a key accident occurs;
if yes, copying the key data to the multi-layer memory unit partition;
judging whether the copying is successful;
if not, the step of copying the key data to the multi-layer memory unit partition is continuously executed.
In one embodiment, the multi-level memory cell includes a dual-level memory cell, a tri-level memory cell, or a quad-level memory cell.
In an embodiment, the flash memory device includes an eMMC, SD, NM, or SSD.
In one embodiment, the flash memory device is applied to a vehicle data recorder, and the key data comprises data of automobile collision and accident emergency brake.
The storage method and apparatus may be implemented in Firmware of a system on chip (soc).
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A storage method applied to a flash memory device having multiple layers of memory cells, the method comprising:
converting a preset area in the multilayer storage unit into a virtual single-layer storage unit; the area where the virtual single-layer storage unit is located is a virtual single-layer storage unit partition; at least one remaining part of the area in the multilayer memory unit is not converted, and the remaining part of the area is a multilayer memory unit partition;
writing user data in the virtual single-layer storage unit partition; and
and backing up key data in the user data in the multi-layer storage unit partition.
2. The method of claim 1, further comprising obtaining a capacity of the virtual single-layer storage unit partition;
determining the size of a converted area in the multi-layer storage unit according to the capacity of the virtual single-layer storage unit partition, and converting the converted area into the virtual single-layer storage unit;
the capacity X of the virtual single-layer memory cell partition meets the requirement (S T)MIN)＜X＜(S*TMAX)；
Where S is the write code rate, TMINFor the shortest duration, T, of said user data to be storedMAXThe user data to be stored is the longest.
3. The method of claim 1, wherein the virtual single-layer memory cell partition is readable and writable multiple times.
4. The method of claim 3, wherein writing user data in the virtual single-layer storage unit partition comprises:
writing the user data in the virtual single-layer storage unit partition;
judging whether the virtual single-layer storage unit partition is full;
if so, deleting a section of data stored in the virtual single-layer storage unit partition at first, erasing a corresponding storage block to store new user data, and continuously executing the step of writing the user data in the virtual single-layer storage unit partition;
if not, continuing to execute the step of writing the user data in the virtual single-layer storage unit partition.
5. The method of any of claims 1 to 4, wherein backing up critical data in the user data in the multi-tiered storage unit partition comprises:
judging whether a key accident occurs;
if yes, copying the key data to the multi-layer storage unit partition;
judging whether the copying is successful;
if not, continuing to execute the step of copying the key data to the multi-layer storage unit partition.
6. The method of claim 1, wherein the multi-layer memory cell comprises a dual-layer memory cell, a tri-layer memory cell, or a quad-layer memory cell.
7. The method of claim 1, wherein the flash memory device comprises an eMMC, SD, NM, or SSD.
8. The method of claim 1, wherein the flash memory device is applied to a vehicle data recorder, and the key data comprises data of vehicle collision and accident emergency brake.
9. A memory device applied to a flash memory device having a plurality of layers of memory cells, the memory device comprising:
the conversion module is used for converting a preset area in the multilayer storage unit into a virtual single-layer storage unit; the area where the virtual single-layer storage unit is located is a virtual single-layer storage unit partition; at least one remaining part of the area in the multilayer memory unit is not converted, and the remaining part of the area is a multilayer memory unit partition;
the writing module is used for writing user data in the virtual single-layer storage unit partition; and
and the backup module is used for carrying out partition backup on key data in the user data in the multilayer storage unit.
10. The apparatus of claim 9, further comprising means for obtaining a capacity of the virtual single-layer storage unit partition;
the conversion module determines the size of a converted area in the multilayer storage unit according to the capacity of the virtual single-layer storage unit partition and converts the converted area into the virtual single-layer storage unit;
the capacity X of the virtual single-layer memory cell partition meets the requirement (S T)MIN)＜X＜(S*TMAX)；
Where S is the write code rate, TMINFor the shortest duration, T, of said user data to be storedMAXThe user data to be stored is the longest.
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| CN202011473042.9A CN112527204A (en) | 2020-12-15 | 2020-12-15 | Storage method and device |
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