CN112526820A - Photomask defect repairing method, photomask preparation method and photomask - Google Patents
Photomask defect repairing method, photomask preparation method and photomask Download PDFInfo
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- CN112526820A CN112526820A CN202011516646.7A CN202011516646A CN112526820A CN 112526820 A CN112526820 A CN 112526820A CN 202011516646 A CN202011516646 A CN 202011516646A CN 112526820 A CN112526820 A CN 112526820A
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- 238000000151 deposition Methods 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 29
- 238000007788 roughening Methods 0.000 claims description 23
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The embodiment of the invention provides a photomask defect repairing method, a photomask preparation method and a photomask, and relates to the technical field of semiconductor photoetching processes.
Description
Technical Field
The invention relates to the technical field of semiconductor photoetching processes, in particular to a photomask defect repairing method, a photomask preparation method and a photomask.
Background
The mask is made of quartz glass as substrate and coated with a layer of metal chromium and photosensitive glue to form a photosensitive material, and the designed circuit pattern is exposed on the photosensitive glue by electronic laser equipment, the exposed area can be developed to form a circuit pattern on the metal chromium to form a photomask similar to the exposed negative, and then the photomask is used for projection positioning of integrated circuit and photoetching of the projected circuit by an integrated circuit photoetching machine, and is an essential tool in the process of IC manufacture.
In the prior art, when a photomask is manufactured, inspection needs to be performed before delivery after a light shielding layer (chrome metal) is plated, wherein the light shielding layer may have an irregular light transmission defect, so that the light shielding layer loses the light shielding effect. When an out-of-specification light-transmitting defect (peelingdefect) is detected on a photomask, the defect is repaired by performing a deposition chemical reaction (deposition) using an energy source (electron beam) and a precursor gas, so that the defect is in accordance with the shipping specification. However, the deposited material is large in volume and high in height, and the repair deposit is likely to peel off in the subsequent cleaning process, which results in repair failure.
Disclosure of Invention
The objects of the present invention include: the method for repairing the photomask defect, the photomask preparation method and the photomask are provided, and the form of increasing the roughness of the deposition surface is utilized to ensure that the deposit is not easy to peel off due to cleaning, thereby reducing the failure rate of the deposition repair of the large-area light-transmitting defect.
In a first aspect, an embodiment of the present invention provides a method for repairing a mask defect, including the following steps: detecting a light shielding layer on the photomask substrate according to a preset pattern; carrying out surface roughening treatment on the photomask substrate in the light-transmitting defect area of the light-shielding layer; depositing a shading repairing layer on the photomask substrate in the light-transmitting defect area with the roughened surface, wherein the shading repairing layer is used for shading the light-transmitting defect area; and cleaning the photomask substrate and the shading layer.
In an optional embodiment, the step of performing surface roughening treatment on the photomask substrate in the light-transmitting defect region of the light-shielding layer includes: and irradiating the surface of the photomask substrate in the light-transmitting defect region by using laser to damage the surface flatness of the photomask substrate in the light-transmitting defect region.
In an alternative embodiment, the reticle substrate is a quartz substrate.
In an optional embodiment, the step of detecting the light shielding layer on the mask substrate according to the predetermined pattern includes: scanning the light shielding layer to acquire an actual pattern of the light shielding layer; and comparing the preset pattern with the actual pattern, and positioning the light-transmitting defect area of the light shielding layer.
In an alternative embodiment, the size of the light transmissive region is greater than or equal to 10 μm by 10 μm.
In an alternative embodiment, the step of depositing a shadow repair layer on the reticle substrate within the surface roughened light transmissive defect region comprises: and depositing a repairing material on the photomask substrate in the light-transmitting defect area by using a chemical vapor deposition method, and forming the shading repairing layer.
In an optional embodiment, the light shielding repair layer is made of the same material as the light shielding layer.
In an alternative embodiment, the thickness of the light shielding repair layer is greater than or equal to the thickness of the light shielding layer.
In another aspect, an embodiment of the present invention provides a method for manufacturing a photomask, including the following steps: depositing a light shielding layer on the photomask substrate; patterning the light shielding layer according to a preset pattern; detecting the light shielding layer according to the preset pattern; carrying out surface roughening treatment on the photomask substrate in the light-transmitting defect area of the light-shielding layer; depositing a shading repairing layer on the photomask substrate in the light-transmitting defect area with the roughened surface, wherein the shading repairing layer is used for shading the light-transmitting defect area; and cleaning the photomask substrate and the shading layer.
In another aspect, an embodiment of the present invention provides a photomask, which is prepared by the foregoing photomask preparation method, including: a photomask substrate and a light-shielding layer disposed on the photomask substrate; and a shading repair layer is deposited on the photomask substrate in the light-transmitting defect area of the shading layer after surface roughening treatment.
The embodiment of the invention has the beneficial effects that:
the invention provides a photomask defect repairing method, a photomask preparation method and a photomask, wherein before a repairing material is deposited, the surface of a photomask substrate in a light-transmitting defect area of a light shielding layer is roughened, so that the surface of the photomask substrate in the light-transmitting defect area is roughened, the contact surface between a deposit and a deposition surface is enlarged by utilizing a form of increasing the roughness of the deposition surface, the adhesiveness of the deposit is increased, the deposit is not easy to peel off due to cleaning, and the failure rate of deposition repairing of large-area light-transmitting defects is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a block diagram illustrating a method for repairing a mask defect according to a first embodiment of the present invention;
FIG. 2 is a flowchart illustrating a process for inspecting a transparent defective region of a mask in a mask defect repairing method according to a first embodiment of the present invention;
FIG. 3 is a flowchart illustrating a process of roughening a surface of a mask substrate according to a first embodiment of the present invention;
FIG. 4 is a flowchart illustrating a process of depositing a repairing material in a method for repairing a mask defect according to a first embodiment of the present invention;
FIG. 5 is a block diagram illustrating a method for fabricating a mask according to a second embodiment of the present invention.
Icon: 100-a photomask; 110-a photomask substrate; 130-a light-shielding layer; 150-a shading repair layer; 170-light transmissive defect region.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
As disclosed in the background art, after patterning the light-shielding layer and before leaving the factory, the photomask needs to be inspected, wherein the light-shielding layer may have an out-of-specification defect, wherein the defect is divided into a light-shielding defect and a light-transmitting defect, and the light-shielding defect refers to the fact that metal chromium residue exists in a light-transmitting area after patterning, which causes the light-shielding defect, so that light-shielding points exist in the light-transmitting area, which affects the performance of the photomask; the transparent defect means that a groove is formed in the patterned light shielding area and penetrates through the light shielding layer, so that transparent points are formed in the light shielding area, the performance of the photomask is also affected, and the light shielding layer loses the light shielding effect. When the photomask has a shading defect, the metal chromium residue is usually removed by cleaning and laser, and when the photomask is detected to have an out-of-specification light-transmitting defect, the repair of the groove at the defect position is generally realized by directly depositing a repair material, that is, an energy source, such as an electron beam, and performing a deposition chemical reaction with precursor gas to fill the groove, so as to realize the repair of the defect, so that the defect meets the delivery specification.
However, with the existing repairing method, cleaning is needed after repairing, and under the impact of cleaning fluid, because the repairing point and the shading layer are not integrated, the repairing deposit is easy to peel off, and the larger the defect area is, the higher the deposition height is, the more the repairing deposit is easy to peel off, causing repairing failure. Specifically, the existing repairing method is adopted for large-area light-transmitting defects (the size is 10nm or more), the repairing failure rate is about 20%, and repairing needs to be carried out again after the repairing failure, so that the waste of resources and the improvement of the cost are caused.
In order to solve the problem of high repair failure rate, embodiments of the present invention provide a method for repairing a mask defect, a method for preparing a mask, and a mask.
First embodiment
Referring to fig. 1 to 4, the present embodiment provides a method for repairing defects of a photomask 100, which utilizes a form of increasing the roughness of a deposition surface to prevent the deposition from peeling off due to cleaning, thereby reducing the failure rate of deposition repair of large-area transparent defects.
The method for repairing defects of the mask 100 provided by the embodiment comprises the following steps:
s1: the light-shielding layer 130 on the mask substrate 110 is detected according to a predetermined pattern.
Specifically, the predetermined pattern refers to a pattern according to which the light shielding layer 130 is patterned, and after the patterning, the light shielding layer 130 is divided into a light shielding region and a light transmitting region, where the light shielding region, i.e., the light shielding layer 130, is formed according to the predetermined pattern, and during the detection, the light transmitting defect region 170 on the light shielding layer 130 can be identified according to the predetermined pattern.
In this embodiment, the step of detecting includes: the light shielding layer 130 is scanned to obtain the actual pattern of the light shielding layer 130, and then the predetermined pattern and the actual pattern are compared to locate the light-transmitting defect region 170 according to the comparison result. Specifically, the scanning of the light shielding layer 130 can be realized by an electron microscope, the actual pattern of the light shielding layer 130 is obtained, and the actual pattern is overlapped and compared with the preset pattern stored in the electron microscope in advance, so that the position of the light-transmitting defect region 170 is obtained, and the light-transmitting defect region 170 is positioned. Of course, other scanning means may be adopted, for example, a CCD camera (charge coupled device camera) or a micro scanner, and the like, and is not limited in particular.
It should be noted that the light-transmissive defective region 170 mentioned in the present embodiment refers to an out-of-specification light-transmissive region at the light-shielding region on the light-shielding layer 130, and specifically, a groove is usually formed on the light-shielding layer 130, and the groove penetrates through the light-shielding layer 130, so that the light-shielding effect of the light-shielding layer 130 in the region is lost, and the performance of the photomask 100 is affected.
It should be further noted that the light-transmitting defective region 170 in this embodiment refers to a light-transmitting defective region 170 with a size greater than or equal to 10nm × 10nm, and belongs to a large-area light-transmitting defect, and for a light-transmitting defective region 170 with a size smaller than this size range, a conventional repairing method may be adopted to repair, and the repairing method provided in this embodiment may also be adopted to repair.
S2: the surface roughening process is performed on the mask substrate 110 in the light-transmitting defect region 170 of the light-shielding layer 130.
Specifically, after the light-transmitting defective region 170 is positioned, the surface of the reticle substrate 110 in the light-transmitting defective region 170 is irradiated with laser light, thereby destroying the surface flatness of the reticle substrate 110 in the light-transmitting defective region 170 and realizing the surface roughening treatment of the reticle substrate 110. After the laser is aligned to the light-transmitting defect region 170, the laser needs to be adjusted to an energy that can damage the surface of the mask substrate 110, so that the laser can strike the surface of the mask substrate 110, and the surface of the mask substrate 110 is locally vaporized, so that the surface of the mask substrate 110 becomes rough and not smooth.
Here, the energy of the laser is related to the material of the mask substrate 110, and in this embodiment, the mask substrate 110 is a quartz substrate, and the energy of the laser needs to be adjusted to a level that can damage the quartz surface. Of course, other materials, such as sapphire or silicon carbide, can be used for the mask substrate 110, and are not limited herein.
In this embodiment, a femtosecond laser device is used as a light source during laser irradiation, wherein the femtosecond laser device adopts an automatic control method and is electrically connected to the electron microscope, so that the position information of the transparent defect region 170 located by the electron microscope can be accurately located, and irradiation of the transparent defect region 170 is realized. Of course, the femtosecond laser device can also be performed manually, that is, an engineer determines the position of the light-transmitting defect according to the image comparison result obtained by the electron microscope, and performs a pretreatment on the position of the light-transmitting defect by using the femtosecond laser device.
It should be noted that the surface roughening treatment mentioned in this embodiment refers to local removal of the reticle substrate 110 in the light-transmitting defect region 170, so that the surface area of the reticle substrate 110 in the light-transmitting defect region 170 is increased to increase the contact bonding area with the light-shielding repair layer 150. In the present embodiment, the surface of the mask substrate 110 is irradiated with laser light continuously without difference, so that the roughness of the surface of the mask substrate 110 is improved.
In another preferred embodiment of the present invention, after performing the surface roughening treatment on the surface of the mask substrate 110 by laser irradiation, a purging operation is required to remove impurities or particles generated by the roughening in the light-transmitting defect region 170.
In the present embodiment, when performing the surface roughening treatment by using the laser, only the surface of the mask substrate 110 is roughened, so that the contact area between the repair material and the mask substrate 110 in the subsequent deposition process is increased, and the bonding force is greater. Of course, in other preferred embodiments, after the surface of the mask substrate 110 is roughened, the energy of the laser may be continuously adjusted, so as to roughen the light shielding layer 130 around the light-transmitting defect region 170, so that when the repair material is deposited, the bonding force between the repair material and the light shielding layer 130 is increased, and the light shielding repair layer 150 can be further prevented from peeling off.
S3: a light blocking repair layer 150 is deposited on the reticle substrate 110 within the surface roughened light transmissive defect region 170.
Specifically, after the surface roughening, a repair material is deposited on the reticle substrate 110 in the light-transmitting defect region 170 by using a chemical vapor deposition method, and a shading repair layer 150 is formed, wherein the shading repair layer 150 is used for shading the light-transmitting defect region 170. The repair material is made of a shading material and is deposited on the rough surface of the photomask substrate 110, and due to the adoption of roughening treatment, the surface of the photomask substrate 110 in the light-transmitting defect area 170 is rough and uneven, and a plurality of local depressions and projections are formed, and the repair material can permeate into the local depressions during deposition, so that the contact area between the formed shading repair layer 150 and the photomask substrate 110 is increased, and the binding force between the shading repair layer 150 and the photomask substrate 110 is improved. Of course, the deposited light shielding repair layer 150 may also be formed by a physical vapor deposition method (such as evaporation, sputtering, etc.), and is not limited herein.
In this embodiment, the light-shielding repair layer 150 and the light-shielding layer 130 are made of the same material. That is, the repair material is the same as the material of the light shielding layer 130, specifically, the light shielding layer 130 is formed by depositing metal chromium, and the repair material is also chromium, so that the degree of bonding between the light shielding repair layer 150 and the light shielding layer 130 is good, and the light shielding effect can be achieved. Of course, the light shielding repair layer 150 may be made of a light shielding material different from the light shielding layer 130, for example, another metal film or an alloy film, and is not particularly limited herein.
In this embodiment, the thickness of the light-shielding repair layer 150 is greater than or equal to the thickness of the light-shielding layer 130, specifically, during actual repair, in order to ensure the repair effect, the thickness of the light-shielding repair layer 150 needs to be increased, so that the light-shielding repair layer 150 can completely cover the light-shielding defect region, and the local light transmission phenomenon is avoided. When actually depositing the repair material, the repair material preferably covers the light-shielding defect region and the peripheral edge region to ensure the light-shielding repair effect.
S4: the mask substrate 110 and the light-shielding layer 130 are cleaned.
Specifically, when the photomask 100 after repair is cleaned by water flow combined with ultrasonic waves, that is, the photomask substrate 110 and the light shielding layer 130 are cleaned, the contact area between the light shielding repair layer 150 and the photomask substrate 110 is increased, the bonding force is increased, the light shielding repair layer 150 is difficult to peel off under water flow impact, and the comprehensive repair failure rate is reduced to 2% or less.
In summary, the present embodiment provides a method for repairing a defect of a photomask 100, before depositing a repair material, a high-energy laser is used to perform a surface roughening treatment on the photomask substrate 110 in the light-transmitting defect region 170 of the light-shielding layer 130, so as to roughen the surface of the photomask substrate 110 in the light-transmitting defect region 170, and by means of increasing the roughness of the deposition surface, the contact surface between the repair material and the deposition surface is increased, and the adhesion of a deposit is increased, so that the light-shielding repair layer 150 is not easy to peel off due to cleaning, and the failure rate of deposition repair of a large-area light-transmitting defect is reduced.
Second embodiment
Referring to fig. 5, the present embodiment provides a method for preparing a mask 100, which includes a preparation step and a repair step, wherein the basic flow and principle of the repair step and the generated technical effects are the same as those of the method for repairing defects of the mask 100 provided in the first embodiment, and for the sake of brief description, reference may be made to corresponding contents in the first embodiment for parts that are not mentioned in the present embodiment.
The present embodiment provides a method for manufacturing a mask 100, which includes the following steps:
s1: a light-shielding layer 130 is deposited over the reticle substrate 110.
Specifically, a metal chromium film is deposited by chemical vapor deposition on the mask substrate 110 to form the light-shielding layer 130.
S2: the light-shielding layer 130 is patterned according to a predetermined pattern.
Specifically, the metal chromium film is subjected to patterning treatment, the patterning process comprises coating photoresist, exposing and developing according to a preset pattern, then dead etching is carried out by using etching liquid, the exposed metal chromium film is etched to form a light-transmitting area, the metal chromium film protected by the photoresist is not etched to form a light-proof area, and then the photoresist is cleaned. Thus, a planar pattern structure having different light transmittance is formed on the mask substrate 110, and the patterning of the light-shielding layer 130 is completed.
S3: the light-shielding layer 130 is detected according to a predetermined pattern.
Specifically, in the patterning process, a certain error may occur in the exposure and development processes according to a preset pattern, where the preset pattern refers to a pattern according to which the light shielding layer 130 is patterned, and after the patterning process, the light shielding layer 130 is divided into a light shielding region and a light transmitting region, where the light shielding region, that is, the light shielding layer 130, is formed after the exposure, development and etching according to the preset pattern, and during the detection, the light transmitting defect region 170 on the light shielding layer 130 may be identified according to the preset pattern.
S4: the surface roughening process is performed on the mask substrate 110 in the light-transmitting defect region 170 of the light-shielding layer 130.
Specifically, after the light-transmitting defective region 170 is positioned, the surface of the reticle substrate 110 in the light-transmitting defective region 170 is irradiated with laser light, thereby destroying the surface flatness of the reticle substrate 110 in the light-transmitting defective region 170 and realizing the surface roughening treatment of the reticle substrate 110.
S5: a light blocking repair layer 150 is deposited on the reticle substrate 110 within the surface roughened light transmissive defect region 170.
Specifically, after the surface roughening, a repair material is deposited on the reticle substrate 110 in the light-transmitting defect region 170 by using a chemical vapor deposition method, and a shading repair layer 150 is formed, where the shading repair layer 150 is used for shading the light-transmitting defect region 170.
S6: the mask substrate 110 and the light-shielding layer 130 are cleaned.
Specifically, the repaired photomask 100 is cleaned by water flow combined with ultrasonic wave, that is, the photomask substrate 110 and the light shielding layer 130 are cleaned, and since the contact area between the light shielding repair layer 150 and the photomask substrate 110 is increased, the bonding force is increased, so that the light shielding repair layer 150 is difficult to peel off under the impact of water flow.
Here, the steps S1 and S2 are preparation steps, and the steps S3 to S6 are repair steps, and the photomask 100 having a defect of light transmittance sequentially passes through the steps S1 to S6, whereas the photomask 100 having no defect of light transmittance is shipped after being inspected in the step S3.
The embodiment further provides a photomask 100, which is prepared by the preparation method of the photomask 100, and has low cost and high repair success rate.
The mask 100 of the present embodiment includes: a mask substrate 110 and a light-shielding layer 130 provided on the mask substrate 110; the mask substrate 110 in the light-transmitting defect region 170 of the light-shielding layer 130 is subjected to surface roughening treatment, and then the light-shielding repair layer 150 is deposited.
In the present embodiment, the light-shielding layer 130 includes a light-shielding region and a light-transmitting region, and the light-transmitting defect region 170 exists in the light-shielding region, wherein the light-shielding layer 130 is formed by chemical vapor deposition of a metal chromium film, and the light-transmitting region is formed by patterning. The mask substrate 110 is a quartz substrate.
The embodiment provides a method for preparing a photomask 100 and the photomask 100, after the photomask 100 is prepared, the photomask 100 is detected, for the photomask 100 with a light-transmitting defect area 170, before a repairing material is deposited, the surface roughening treatment is carried out on the photomask substrate 110 in the light-transmitting defect area 170 of a light shielding layer 130, so that the surface of the photomask substrate 110 in the light-transmitting defect area 170 is roughened, the contact surface between a deposit and a deposition surface is enlarged by utilizing a form of increasing the roughness of the deposition surface, the adhesion type of the deposit is increased, the deposit is not easy to peel off due to cleaning, and the failure rate of deposition repair of large-area light-transmitting defects is reduced.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for repairing a mask defect, comprising the steps of:
detecting a light shielding layer on the photomask substrate according to a preset pattern;
carrying out surface roughening treatment on the photomask substrate in the light-transmitting defect area of the light-shielding layer;
depositing a shading repairing layer on the photomask substrate in the light-transmitting defect area with the roughened surface, wherein the shading repairing layer is used for shading the light-transmitting defect area;
and cleaning the photomask substrate and the shading layer.
2. The method for repairing mask defects according to claim 1, wherein the step of performing surface roughening treatment on the mask substrate in the light-transmitting defect region of the light-shielding layer comprises:
and irradiating the surface of the photomask substrate in the light-transmitting defect region by using laser to damage the surface flatness of the photomask substrate in the light-transmitting defect region.
3. The method for repairing mask defects according to claim 2, wherein the mask substrate is a quartz substrate.
4. The method as claimed in claim 1, wherein the step of inspecting the light-shielding layer on the mask substrate according to the predetermined pattern comprises:
scanning the light shielding layer to acquire an actual pattern of the light shielding layer;
and comparing the preset pattern with the actual pattern, and positioning the light-transmitting defect area of the light shielding layer.
5. The method for repairing mask defects of claim 4, wherein the size of the transparent defect region is greater than or equal to 10 μm by 10 μm.
6. The method of repairing reticle defects according to claim 1, wherein the step of depositing a shading repair layer on the reticle substrate in the light-transmitting defect region with a roughened surface comprises:
and depositing a repairing material on the photomask substrate in the light-transmitting defect area by using a chemical vapor deposition method, and forming the shading repairing layer.
7. The method for repairing a reticle defect according to claim 6, wherein the light shielding repair layer and the light shielding layer are made of the same material.
8. The method for repairing a reticle defect of claim 6, wherein the thickness of the shading repair layer is greater than or equal to the thickness of the shading layer.
9. A method for preparing a photomask is characterized by comprising the following steps:
depositing a light shielding layer on the photomask substrate;
patterning the light shielding layer according to a preset pattern;
detecting the light shielding layer according to the preset pattern;
carrying out surface roughening treatment on the photomask substrate in the light-transmitting defect area of the light-shielding layer;
depositing a shading repairing layer on the photomask substrate in the light-transmitting defect area with the roughened surface, wherein the shading repairing layer is used for shading the light-transmitting defect area;
and cleaning the photomask substrate and the shading layer.
10. A photomask prepared by the method of claim 9, the photomask comprising:
a photomask substrate and a light-shielding layer disposed on the photomask substrate;
and a shading repair layer is deposited on the photomask substrate in the light-transmitting defect area of the shading layer after surface roughening treatment.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06138646A (en) * | 1992-09-08 | 1994-05-20 | Oki Electric Ind Co Ltd | Correcting method for phase shift mask |
| US5799104A (en) * | 1995-08-22 | 1998-08-25 | Kabushiki Kaisha Toshiba | Mask defect repair system and method |
| CN101713917A (en) * | 2004-06-22 | 2010-05-26 | Hoya株式会社 | Gray mask blank, mask and manufacture methods thereof |
| JP2010217918A (en) * | 2010-05-18 | 2010-09-30 | Dainippon Printing Co Ltd | Method for correcting defect in photomask |
| TW201344341A (en) * | 2012-04-17 | 2013-11-01 | Shih Her Technologies Inc | Metal mask |
-
2020
- 2020-12-21 CN CN202011516646.7A patent/CN112526820A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06138646A (en) * | 1992-09-08 | 1994-05-20 | Oki Electric Ind Co Ltd | Correcting method for phase shift mask |
| US5799104A (en) * | 1995-08-22 | 1998-08-25 | Kabushiki Kaisha Toshiba | Mask defect repair system and method |
| CN101713917A (en) * | 2004-06-22 | 2010-05-26 | Hoya株式会社 | Gray mask blank, mask and manufacture methods thereof |
| JP2010217918A (en) * | 2010-05-18 | 2010-09-30 | Dainippon Printing Co Ltd | Method for correcting defect in photomask |
| TW201344341A (en) * | 2012-04-17 | 2013-11-01 | Shih Her Technologies Inc | Metal mask |
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