CN112520729B - Graphene-based terahertz molecule detection device and preparation method thereof - Google Patents

Graphene-based terahertz molecule detection device and preparation method thereof Download PDF

Info

Publication number
CN112520729B
CN112520729B CN202011411670.4A CN202011411670A CN112520729B CN 112520729 B CN112520729 B CN 112520729B CN 202011411670 A CN202011411670 A CN 202011411670A CN 112520729 B CN112520729 B CN 112520729B
Authority
CN
China
Prior art keywords
graphene
detection device
terahertz
molecule detection
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011411670.4A
Other languages
Chinese (zh)
Other versions
CN112520729A (en
Inventor
彭蠡
方文章
高超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Gaoxi Technology Co Ltd
Original Assignee
Hangzhou Gaoxi Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Gaoxi Technology Co Ltd filed Critical Hangzhou Gaoxi Technology Co Ltd
Priority to CN202011411670.4A priority Critical patent/CN112520729B/en
Publication of CN112520729A publication Critical patent/CN112520729A/en
Application granted granted Critical
Publication of CN112520729B publication Critical patent/CN112520729B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/32—Size or surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a preparation method of a graphene-based terahertz molecular detection device, which uses a graphene film with a high surface area as a base material, wherein the film has high conductivity of a graphite material and a high specific surface area of graphene, and has excellent absorptivity and electrical modulation for light. The film is attached to the surface of quartz, etched into a fixed shape and placed under terahertz light, and the peak position of terahertz transmission spectrum changes along with the increase of the surface molecule concentration. Therefore, the terahertz molecular detection device can be prepared, is used for detecting molecular residues, and can be particularly applied to trace detection.

Description

Graphene-based terahertz molecule detection device and preparation method thereof
Technical Field
The invention relates to a preparation method of a graphene-based terahertz molecule detection device with high electrical modulation and high responsiveness.
Background
In 2010, Andre GeiM and Konstantin Novoselov, two professors of Manchester university in England, raised the worldwide hot trend of graphene research because of the first successful separation of stable graphene to obtain the Nobel prize of physics. The graphene has excellent electrical properties (the electron mobility can reach 2 multiplied by 10 at room temperature) 5 cM 2 Vs), outstanding thermal conductivity (5000W/MK), extraordinary specific surface area (2630M) 2 ,/g), Young's modulus (1100GPa) and breaking strength (125 GPa). The excellent electric and heat conduction performance of the graphene completely exceeds that of metal, meanwhile, the graphene has the advantages of high temperature resistance and corrosion resistance, and the good electrical and optical properties of the graphene lay a solid foundation for the application of the graphene.
The terahertz molecule detection is to detect the influence of molecules on the conductivity of a terahertz metamaterial by using terahertz as a basic light source. The method has the advantage of being capable of detecting the concentration of the drug molecules in batch and real time. In the field of terahertz molecular detection, conventional application materials are metal and semimetal, and two serious problems exist: first, molecules have poor affinity, particularly with molecules containing conjugated structures; secondly, it cannot modulate signals, has poor responsiveness, and cannot be used for trace detection.
Therefore, a new conducting layer application scheme is provided, and the conducting layer application scheme is applied to the field of terahertz molecule detection capable of being electrically modulated in a large scale and is used for rapidly identifying drug molecule residues.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a graphene-based terahertz molecule detection device with electrical modulation characteristics and high responsiveness, wherein the graphene-based terahertz molecule detection device is providedThe graphene-based terahertz molecule detection device consists of a silicon dioxide substrate and a high-surface-area graphene film attached to a silicon dioxide substrate, wherein the specific surface area of the high-surface-area graphene film is more than or equal to 30m 2 /g，I d /I g Less than 8 percent.
In certain preferred embodiments, the high surface area graphene film is a carbon aerogel having a graphene wall layer thickness of less than 5 layers and a pore size diameter of 20nm to 1 um.
In certain preferred embodiments, the carbon aerogel is prepared by:
and (3) catalyzing and growing the graphene by taking the micron-thickness copper-nickel foam alloy film as a catalyst, and removing the catalyst by chemical etching to obtain the micron-thickness foam graphene.
In certain preferred embodiments, the high surface area graphene film is a vertically grown graphene film.
The invention also provides a preparation method of the graphene-based terahertz molecule detection device, which is characterized by comprising the following steps of:
(1) coating a solid phase transfer agent on the surface of the vertically grown graphene with copper base as a substrate, and placing the vertically grown graphene in an etching solution for interface etching;
(2) after the liquid level is clearly etched, removing the etching liquid; heating to remove the solid phase transfer agent to obtain an independent self-supporting vertical growth graphene structure;
(3) and heating the obtained graphene film to above 2000 ℃, keeping for 1-8h, and removing defects in the graphene layer.
(4) And adhering the obtained defect-free graphene film to the surface (with the thickness of 1mm) of a silicon dioxide substrate, and performing laser etching to obtain a specific array structure.
In certain preferred embodiments, the vertically grown graphene film has a specific surface area of 30-50m 2 Between/g, the thickness is less than 500 nm.
In certain preferred embodiments, the graphene film is heated by electrical heating and microwave heating, and the electrical heating and microwave heating are characterized in that: can be directed against the regional local heating of target, do not influence ambient temperature, consequently, the realization that extremely is favorable to rapid cooling.
In certain preferred embodiments, the solid phase transfer agent is a solid phase volatilizable molecular crystal such as borneol, camphor, menthol, naphthalene, anthracene, dry ice, and the like.
The invention has the beneficial effects that:
(1) the graphene-based terahertz molecule detection device prepared by adopting the graphene film with the high specific surface area has the excellent surface molecule doping modification characteristic given by the high specific surface area, so that the graphene has excellent electrical modulation characteristics, and the absorber can be applied to various extreme environments.
(2) The defect-free vertically grown graphene film is obtained through simple temperature treatment control, the stacking structure of the graphene film is controllable, and the method is high in reliability, simple in technology and low in cost.
(3) Compared with a terahertz metamaterial prepared by single-layer graphene, the structure is high in processability, small in surface resistance and high in terahertz response strength; compared with a terahertz metamaterial prepared by metal, the structure has electrical modulation; compared with a multilayer stacked graphene film, the material has extremely high specific surface area on one hand, so that the graphene regulation performance of drug molecules is excellent, and in addition, the material has extremely high light absorption performance due to a vertical growth structure, so that the material has extremely high optical modulation performance.
(4) The porous carbon aerogel has both conductivity and high specific surface area. The conductivity endows the terahertz absorber with terahertz absorption characteristics.
Drawings
Fig. 1 is an SEM image of vertically grown graphene, in which a is a 30k magnified view and b is a partial magnified view thereof.
FIG. 2 is a graph of defect change with incubation time.
FIG. 3 is an optical diagram of a graphene film/silicon dioxide metamaterial structure.
FIG. 4 is a glucose response for graphene membrane/silica metamaterial structures.
FIG. 5 is an electrical modulation of a graphene film/silicon dioxide metamaterial structure.
Detailed Description
Experiments show that the graphene can be subjected to surface adsorption doping by adsorbing drug molecules to the surface of the graphene, so that the graphene has an electrical modulation characteristic, but as the thickness of the graphene is increased, the electrical modulation effect of the adsorbed molecules on the inner-layer graphene is weakened or even disappears. Therefore, the smaller the number of layers of the graphene is, the better the modulation effect of molecules on the whole material is, and the greater the reflection influence on the terahertz is reflected to the terahertz aspect. In contrast, the invention provides a terahertz molecular detection device with an electrical modulation characteristic, which is prepared by adopting a graphene film with a high specific surface area as a detection film.
The present invention will be further described with reference to the following examples. Wherein the defect content is tested in the following way: raman I D /I G To determine how much material is defective.
Example 1:
(1) preparing 300 nm-thick vertically grown graphene on a copper substrate by a plasma enhanced vapor deposition method, then uniformly coating borneol on the surface of the vertically grown graphene, and placing the vertically grown graphene in an etching solution for interface etching;
(2) removing the etching liquid after the liquid level of the etching liquid is clearly etched; heating to remove borneol to obtain an independent self-supporting vertical growth graphene structure;
(3) as shown in FIG. 2, the temperature is raised to 2000 ℃ at a rate of 10 ℃/min and maintained for a certain period of time. The Raman spectrum D peak shows that the defects of the material are gradually reduced along with the time, and the defects are hardly visible at 8 h. In this embodiment, the obtained graphene film is electrically heated to 2000 ℃, and is kept for 8 hours, so as to remove defects in the graphene layer. The specific surface area of the vertically grown graphene is detected to be about 47m 2 G, defect I d /I g The content was 7%.
(4) And (3) attaching the obtained defect-free graphene film to the surface (with the thickness of 1mm) of a silicon dioxide substrate, and performing laser etching to obtain a specific array structure (shown in figure 3), so as to obtain the graphene-based terahertz molecule detection device.
The structure is placed under terahertz light, molecules to be measured are dripped, the spectrum center of the structure regularly shifts along with the change of the concentration of the molecules, and the detection of the concentration of the medicine can be realized, as shown in fig. 4. Importantly, as shown in fig. 5, when terahertz is detected, an electric field is applied at the same time, so that the fermi level of graphene is changed, the conductivity is changed, and the electrical modulation of the terahertz signal is realized. An electrical signal can be enhanced in a device with small or too high surface resistance, and the terahertz signal is enhanced through electrical modulation, so that the terahertz molecule detection device is used for detecting the extreme conditions of micro molecules and the like.
Example 2:
(1) preparing 350 nm-thick vertically grown graphene on a copper substrate by a plasma enhanced vapor deposition method, then uniformly coating naphthalene on the surface of the vertically grown graphene, and placing the vertically grown graphene in an etching solution for interface etching;
(2) removing the etching liquid after the liquid level of the etching liquid is clearly etched; heating to remove naphthalene to obtain an independent self-supporting vertically grown graphene structure;
(3) heating the obtained graphene film to 2100 ℃ by infrared radiation, and keeping the temperature for 2h to remove the defects in the graphene layer.
(4) And (3) attaching the obtained defect-free graphene film to the surface (with the thickness of 1mm) of a silicon dioxide substrate, and performing laser etching to obtain a specific array structure, thus obtaining the graphene-based terahertz molecule detection device.
The specific surface area of the vertically grown graphene is about 34m 2 G, defect I d /I g The content was 4%. The graphene-based terahertz molecular detection device has excellent optical and electrical modulation characteristics.
Example 3:
(1) preparing vertical growth graphene with the thickness of 500nm on a copper substrate by a plasma enhanced vapor deposition method, then uniformly coating a solid phase transfer agent on the surface of the vertical growth graphene, and placing the vertical growth graphene in an etching solution for interface etching;
(2) removing the etching liquid after the liquid level of the etching liquid is clearly etched; heating to remove the solid phase transfer agent to obtain an independent self-supporting vertical growth graphene structure;
(3) and heating the obtained graphene film to 2150 ℃ by microwave heating, and keeping for 2h to remove defects in the graphene layer.
(4) And attaching the obtained defect-free graphene film to the surface (with the thickness of 1mm) of a silicon dioxide substrate, and performing laser etching to obtain a specific array structure, thus obtaining the graphene-based terahertz molecule detection device.
The specific surface area of the vertically grown graphene is about 50m 2 G, defect I d /I g The content was 4%. The graphene-based terahertz molecular detection device has excellent optical and electrical modulation characteristics.
Example 4:
(1) and (3) catalyzing and growing the graphene by taking the micron-thickness copper-nickel foam alloy film as a catalyst, and removing the catalyst by chemical etching to obtain the micron-thickness foam graphene. The thickness of the graphene wall layer of the foam graphene is about 3 layers, and the diameter of the pore size is 25 nm.
(2) And (3) electrically heating the obtained foam graphene to 2000 ℃, keeping the temperature for 8 hours, and removing defects in the graphene layer.
(3) And attaching the obtained defect-free foamed graphene to the surface (with the thickness of 1mm) of a silicon dioxide substrate, and performing laser etching to obtain a specific array structure.
The specific surface area of the vertically grown graphene is about 45m through detection 2 G, defect I d /I g The content was 2%. The graphene-based terahertz molecular detection device has excellent optical and electrical modulation characteristics.
Example 5:
(1) and (3) catalyzing and growing the graphene by taking the micron-thickness copper-nickel foam alloy film as a catalyst, and removing the catalyst by chemical etching to obtain the micron-thickness foam graphene. The thickness of the graphene wall layer of the foam graphene is about 3 layers, and the diameter of the pore size is 25 nm.
(2) And (3) electrically heating the obtained foam graphene to 2000 ℃, keeping the temperature for 8 hours, and removing defects in the graphene layer.
(3) And attaching the obtained defect-free foamed graphene to the surface (with the thickness of 1mm) of a silicon dioxide substrate, and performing laser etching to obtain a specific array structure.
The specific surface area of the vertically grown graphene is about 30m 2 G, defect I d /I g The content was 2%. The graphene-based terahertz molecular detection device has excellent optical and electrical modulation characteristics.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This need not be, nor should all embodiments be exhaustive. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.

Claims (6)

1. The graphene-based terahertz molecule detection device is characterized by consisting of a silicon dioxide substrate and a high-surface-area graphene film attached to the surface of the silicon dioxide substrate, wherein the specific surface area of the high-surface-area graphene film is more than or equal to 30m 2 G, defect I d /I g Less than 8 percent; the graphene-based terahertz molecule detection device has electrical modulation;
the high-surface-area graphene film is carbon aerogel, the thickness of a graphene wall layer of the carbon aerogel is less than 5 layers, and the diameter of the pore size is 20nm-1 mu m;
the carbon aerogel is prepared by the following method:
growing graphene under catalysis of a micron-thickness copper-nickel foam alloy film serving as a catalyst, and removing the catalyst through chemical etching to obtain micron-thickness foam graphene; and (3) electrically heating the obtained foam graphene to 2000 ℃, keeping the temperature for 8 hours, and removing defects in the graphene layer.
2. The graphene-based terahertz molecule detection device is characterized by comprising a silicon dioxide substrate and a high-surface-area graphene film attached to the surface of the silicon dioxide substrate, wherein the specific surface area of the high-surface-area graphene film is more than or equal to 30m 2 G, defect I d /I g Less than 8 percent; the graphene-based terahertz molecule detection device has electrical modulation; the high surface area graphene film is a vertically grown graphene film;
the graphene-based terahertz molecule detection device is prepared by the following steps:
(1) coating a solid phase transfer agent on the surface of the vertically grown graphene with a copper base as a substrate, and placing the vertically grown graphene in an etching solution for interface etching;
(2) after the liquid level is clearly etched, removing the etching liquid; heating to remove the solid phase transfer agent to obtain an independent self-supporting vertical growth graphene structure;
(3) heating the obtained graphene film to above 2000 ℃, keeping the temperature for 1-8h, and removing defects in the graphene layer;
(4) and attaching the obtained defect-free graphene film to the surface of a silicon dioxide substrate, and performing laser etching to obtain a specific array structure.
3. The graphene-based terahertz molecule detection device of claim 2, wherein the vertically grown graphene film is prepared by a plasma enhanced vapor deposition method.
4. The graphene-based terahertz molecule detection device of claim 2, wherein the specific surface area of the vertically grown graphene film is 30-50m 2 Between/g, the thickness is less than 500 nm.
5. The graphene-based terahertz molecule detection device of claim 2, wherein the graphene film is heated by any one of electrical heating, microwave heating and infrared radiation heating.
6. The graphene-based terahertz molecule detection device of claim 2, wherein the solid phase transfer agent is borneol, camphor, menthol, naphthalene, or anthracene.
CN202011411670.4A 2020-12-04 2020-12-04 Graphene-based terahertz molecule detection device and preparation method thereof Active CN112520729B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011411670.4A CN112520729B (en) 2020-12-04 2020-12-04 Graphene-based terahertz molecule detection device and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011411670.4A CN112520729B (en) 2020-12-04 2020-12-04 Graphene-based terahertz molecule detection device and preparation method thereof

Publications (2)

Publication Number Publication Date
CN112520729A CN112520729A (en) 2021-03-19
CN112520729B true CN112520729B (en) 2022-08-26

Family

ID=74998534

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011411670.4A Active CN112520729B (en) 2020-12-04 2020-12-04 Graphene-based terahertz molecule detection device and preparation method thereof

Country Status (1)

Country Link
CN (1) CN112520729B (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101764051A (en) * 2010-01-15 2010-06-30 电子科技大学 Method for transferring graphene film
CN104229783B (en) * 2014-09-10 2016-04-13 浙江碳谷上希材料科技有限公司 A kind of preparation method of high thermal conductivity graphene film
CN110564087B (en) * 2019-05-24 2020-10-30 深圳市溢鑫科技研发有限公司 Vertical graphene-high molecular polymer composite material and preparation method thereof

Also Published As

Publication number Publication date
CN112520729A (en) 2021-03-19

Similar Documents

Publication Publication Date Title
JP5705315B2 (en) Low temperature manufacturing method of graphene and direct transfer method of graphene using the same
CN101312907B (en) Double-walled carbon nanotube,directional double-layer carbon nanotube bulk structure of the same, method for producing them
US8535553B2 (en) Large-area single- and few-layer graphene on arbitrary substrates
Hu et al. Salt‐resistant carbon nanotubes/polyvinyl alcohol hybrid gels with tunable water transport for high‐efficiency and long‐term solar steam generation
CN101365650B (en) Bulk assembly of oriented carbon nanotube
US20110091647A1 (en) Graphene synthesis by chemical vapor deposition
US20120025427A1 (en) Method of making transparent conductive film
JP2009143799A (en) Single crystal graphene sheet and method for producing the same
CN108217627B (en) Preparation method of independent self-supporting graphene carbon tube composite membrane
WO2021228015A1 (en) Patterned boron-doped diamond electrode having high specific surface area and manufacturing method and application of patterned boron-doped diamond electrode
Geng et al. From self‐assembly hierarchical H‐Bn patterns to centimeter‐scale uniform monolayer H‐Bn film
CN112520729B (en) Graphene-based terahertz molecule detection device and preparation method thereof
CN110407196B (en) Preparation method of low-defect graphene film based on graphene foam
Mallick et al. Linear control of the oxidation level on graphene oxide sheets using the cyclic atomic layer reduction technique
CN112162339B (en) Preparation method of light modulation terahertz absorption device with all-carbon structure
Yao et al. Highly thermally stable and flexible conductive film electrodes based on photo-responsive shape memory polyimide
Oh et al. Large-scale, single-oriented ZnO nanostructure on h-BN films for flexible inorganic UV sensors
Li et al. Direct growth of nanographene at low temperature from carbon black for highly sensitive temperature detectors
CN108503383A (en) A kind of preparation method of the graphene composite film of high thermal conductivity
Kumar et al. Quenching of reducing properties of mesoporous silicon and its use as template for metal/semiconductor deposition
Yang et al. Direct growth of large-area graphene films onto oxygen plasma-etched quartz for nitrogen dioxide gas detection
CN108917914B (en) Conductive polymer/graphene film composite film and application thereof in low-frequency acoustic detector
CN103498190B (en) The preparation method of high purity dendrite FeWO4/FeS nanometer nuclear shell nano-structure
Wan et al. Superelastic and robust carbonaceous nanofibrous aerogel with high pressure-sensitivity, excellent thermal insulation and high photothermal-conversion efficiency
TWI813930B (en) Method for making electronic black body and electronic black body

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information

Inventor after: Peng Li

Inventor after: Fang Wenzhang

Inventor after: Gao Chao

Inventor before: Peng Li

Inventor before: Wen Zhang

Inventor before: Gao Chao

CB03 Change of inventor or designer information
GR01 Patent grant
GR01 Patent grant