CN112507828A - Optical fingerprint identification structure, manufacturing method thereof and display device - Google Patents
Optical fingerprint identification structure, manufacturing method thereof and display device Download PDFInfo
- Publication number
- CN112507828A CN112507828A CN202011373469.1A CN202011373469A CN112507828A CN 112507828 A CN112507828 A CN 112507828A CN 202011373469 A CN202011373469 A CN 202011373469A CN 112507828 A CN112507828 A CN 112507828A
- Authority
- CN
- China
- Prior art keywords
- metal portion
- substrate
- type doped
- doped region
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 208
- 239000002184 metal Substances 0.000 claims abstract description 208
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000003990 capacitor Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000003826 tablet Substances 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Geometry (AREA)
- Image Input (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
The embodiment of the application discloses an optical fingerprint identification structure, a manufacturing method thereof and a display device. The optical fingerprint recognition structure of this embodiment includes a display area and a sensing area, the sensing area including a second TFT, a PIN photodiode, and a capacitor, the second TFT including a source electrode, a drain electrode, an active area, a first metal portion, and a second metal portion; the PIN photodiode comprises an N-type doped region, a P-type doped region, an intrinsic region, a third metal part and a fourth metal part, wherein the P-type doped region is electrically connected with the source electrode; the capacitor comprises a fifth metal part serving as a first plate of the capacitor, an orthographic projection of the fifth metal part on the substrate covers orthographic projections of the second metal part and the third metal part on the substrate, and the second metal part and the third metal part serve as second plates of the capacitor. This optics fingerprint identification structure is when realizing the fingerprint identification function, transversely sets up PIN photodiode, effectively improves the integrated level of this structure.
Description
Technical Field
The application relates to the technical field of fingerprint identification. And more particularly, to an optical fingerprint identification structure, a method for manufacturing the same, and a display device.
Background
Fingerprints are unique for every person, and with the development of the market, the fingerprint identification technology becomes one of the important functions of electronic products, which is concerned by many electronic manufacturers and applied to the electronic products, such as mobile phones, tablet computers, smart wearable devices, and the like. Therefore, the user can carry out authority verification only by touching the fingerprint identification module of the electronic device with a finger before operating the electronic device with the fingerprint identification function, and the authority verification process is simplified.
At present, the integration of the optical fingerprint identification technology into the display panel is a future display direction, and the fingerprint identification area can be located in the display area of the display panel, however, the integration level of the technology of integrating the optical fingerprint identification into the display panel and the identification precision of the optical fingerprint identification in the prior art are low, and the situation of abnormal identification often occurs, which affects the user experience.
Disclosure of Invention
The present application is directed to an optical fingerprint identification structure, a method for manufacturing the same, and a display device, so as to solve at least one of the problems in the prior art.
In order to achieve the purpose, the following technical scheme is adopted in the application:
in a first aspect, the present application provides an optical fingerprint identification structure, comprising a display area and a sensing area,
the display area includes:
a first TFT formed on the substrate;
a light emitting device driven by the first TFT to emit light;
the sensing region includes:
a second TFT, a PIN photodiode, and a capacitor formed on the substrate,
wherein the content of the first and second substances,
the second TFT includes a source, a drain, an active region, a first metal portion electrically connected to the drain at a side of the drain remote from the substrate through a first via, and a second metal portion electrically connected to the source at a side of the source remote from the substrate through a second via;
the PIN photodiode comprises an N-type doped region, a P-type doped region, an intrinsic region between the N-type doped region and the P-type doped region, a third metal part electrically connected with the P-type doped region through a third through hole on the side of the P-type doped region far away from the substrate, and a fourth metal part electrically connected with the N-type doped region through a fourth through hole on the side of the N-type doped region far away from the substrate, wherein the P-type doped region is electrically connected with a source electrode;
the capacitor includes a fifth metal portion electrically connected to the fourth metal portion through a fifth via hole on the side of the fourth metal portion away from the substrate as a first plate of the capacitor, wherein the fifth metal portion extends toward the second TFT side so that an orthographic projection of the fifth metal portion on the substrate covers orthographic projections of the second metal portion and the third metal portion on the substrate, the second metal portion and the third metal portion serving as a second plate of the capacitor.
According to the optical fingerprint identification structure provided by the first aspect of the application, the PIN photodiode is transversely arranged, the fifth metal part, the second metal part and the third metal part respectively form the first polar plate and the second polar plate of the capacitor, so that light reflected by a fingerprint is incident into the intrinsic region through the fifth metal part, the integral thickness of the optical fingerprint identification structure is not increased while the fingerprint identification function is realized, the optical fingerprint identification structure is light and thin, and the integration level of the optical fingerprint identification structure is effectively improved; compared with the conventional photodiode which is arranged in a stacked mode, the PIN photodiode can be formed on the same layer, the forming process of the structure and the complexity of the optical identification structure are simplified, and the compatibility with the preparation process of the conventional OLED structure is higher.
In one possible implementation, the P-type doped region and the source are electrically connected through the second metal portion and the third metal portion.
In a possible implementation manner, the P-type doped region and the source are the same region, the second via hole and the third via hole are the same via hole, and the second metal portion and the third metal portion are the same metal portion.
The second metal part and the third metal part of the implementation mode are the same metal part, namely the PIN photodiode and the second TFT share one electrode, so that the preparation process of the structure is further simplified, and the preparation efficiency of the optical fingerprint identification structure is improved; meanwhile, the implementation mode can also effectively improve the contact resistance between the PIN photodiode and the second TFT, so that the fingerprint identification precision and the identification sensitivity of the optical fingerprint identification structure are improved.
In a possible implementation manner, a first opening is formed in the fifth metal part, and an orthographic projection of the first opening on the substrate covers an orthographic projection of the intrinsic region on the substrate.
This implementation forms first opening through forming first opening at fifth metal portion, forms first opening at the first polar plate of condenser promptly for first polar plate forms into annular capacitance, thereby increases the electric capacity area of condenser, and then increases the memory space of condenser, further improves the fingerprint identification precision of this optics fingerprint identification structure.
In one possible implementation, the fourth metal part includes
A connecting portion;
a first extension portion and a second extension portion extending toward the second TFT side in a direction parallel to the substrate, wherein a connection portion connects the first extension portion and the second extension portion, the third metal portion is formed between the first extension portion and the second extension portion, extending toward the PIN photodiode side,
wherein an orthographic projection of the first opening on the substrate covers an orthographic projection of a space between the third metal portion and the connecting portion on the substrate.
According to the implementation mode, the first extension part, the second extension part and the connecting part are arranged, so that the second pole plate of the capacitor is divided into two sub-pole plates, the second pole plate forms an annular capacitor, the capacitance area of the capacitor is further increased, the storage capacity of the capacitor is improved, and the fingerprint identification precision of the optical fingerprint identification structure is further improved; in addition, the first opening, the third metal part and the connecting part form a collimation structure at intervals, and the fifth metal part and the third metal part shield stray light with large-angle incidence on the side surface, so that the stray light is filtered, the interference of the stray light is reduced, the signal quantity of light rays incident into the PIN photodiode is improved, and the identification precision of fingerprint identification is enhanced.
In a possible implementation manner, the method further comprises
A pixel defining layer formed on the fifth metal part;
a second opening formed in the pixel defining layer corresponding to the first opening.
This implementation is through setting up the second opening corresponding with first opening to form the collimation structure, the stray light that the side wide-angle was incided is sheltered from to fifth metal part and pixel definition layer, thereby filters stray light, reduces stray light's interference, improves the semaphore of the light of incidenting in the PIN photodiode, thereby reinforcing fingerprint identification's identification precision.
In a possible implementation manner, the method further comprises
A polysilicon layer formed on the substrate, wherein,
the source electrode, the drain electrode, the N-type doped region and the P-type doped region are doped regions formed in the polycrystalline silicon layer;
the intrinsic region and the active region are undoped regions in the polysilicon layer.
In one possible implementation, the first TFT includes a sixth metal portion electrically connected to its source at its source remote substrate side through a sixth via and a seventh metal portion electrically connected to its drain at its drain remote substrate side through a seventh via;
the light emitting device includes an anode electrically connected to a drain electrode of the first TFT through an eighth via hole.
In a possible implementation manner, the fifth metal part and the anode are arranged on the same layer;
the first to fourth metal portions and the sixth to seventh metal portions are disposed on the same layer.
In this implementation, the fifth metal part and the anode are disposed in the same layer, and the first to fourth metal parts and the sixth to seventh metal parts are disposed in the same layer, that is, the anode and the fifth metal part may be formed simultaneously by the same forming process, and the first to fourth metal parts and the sixth to seventh metal parts may be formed simultaneously by the same forming process, so as to be well matched with the manufacturing process in the prior art, and simplify the design of the forming process.
A second aspect of the present application provides a display device, comprising a plurality of optical fingerprint identification structures as provided in the first aspect of the present application arranged in an array.
A third aspect of the present application provides a method for manufacturing an optical fingerprint identification structure, including:
forming a first TFT and a light emitting device driven by the first TFT to emit light in a region where a display region is formed on a substrate;
forming a second TFT, a PIN photodiode and a capacitor in a region where the sensing region is formed on the substrate, wherein
The second TFT is formed to include a source, a drain, an active region, a first metal portion electrically connected to the drain at the drain remote substrate side through a first via, and a second metal portion electrically connected to the source at the source remote substrate side through a second via;
the PIN photodiode is formed to include an N-type doped region, a P-type doped region, an intrinsic region between the N-type doped region and the P-type doped region, a third metal portion electrically connected to the P-type doped region through a third via at a position away from the substrate side of the P-type doped region, and a fourth metal portion electrically connected to the N-type doped region through a fourth via at a position away from the substrate side of the N-type doped region, wherein the P-type doped region is electrically connected to the source;
the capacitor is formed to include, as a first plate of the capacitor, a fifth metal portion electrically connected to the fourth metal portion through a fifth via on the side of the fourth metal portion away from the substrate, wherein the fifth metal portion extends toward the second TFT side so that an orthographic projection of the fifth metal portion on the substrate covers orthographic projections of the second metal portion and the third metal portion on the substrate, the second metal portion and the third metal portion serving as a second plate of the capacitor.
The beneficial effect of this application is as follows:
aiming at the technical problems in the prior art, the application provides an optical fingerprint identification structure, a manufacturing method thereof and a display device, wherein the optical fingerprint identification structure is transversely provided with a PIN photodiode, and a fifth metal part, a second metal part and a third metal part respectively form a first polar plate and a second polar plate of a capacitor, so that light reflected by a fingerprint is incident into an intrinsic region through the fifth metal part, the whole thickness of the optical fingerprint identification structure is not increased while the fingerprint identification function is realized, the light and thin of the optical fingerprint identification structure are facilitated, and the integration level of the optical fingerprint identification structure is effectively improved; compared with the conventional photodiode which is arranged in a stacked mode, the PIN photodiode can be formed on the same layer, the forming process of the structure and the complexity of the optical identification structure are simplified, and the compatibility with the preparation process of the conventional OLED structure is higher.
Drawings
The following describes embodiments of the present application in further detail with reference to the accompanying drawings.
Fig. 1 shows a circuit schematic of a second TFT, a PIN photodiode, and a capacitor of one embodiment of the present application.
FIG. 2 illustrates a structural cross-sectional view of an optical fingerprint identification structure according to one embodiment of the present application.
Fig. 3 shows a structural cross-sectional view of an optical fingerprint identification structure of yet another embodiment of the present application.
Fig. 4 shows a perspective view of the fifth metal part, the fourth metal part, the third metal part, and the PIN photodiode according to an embodiment of the present application.
FIG. 5 shows a ray diagram of a collimating structure according to an embodiment of the present application.
Fig. 6-10 are cross-sectional views of the optical fingerprint identification structure according to an embodiment of the present application, which correspond to main steps of a manufacturing process of the optical fingerprint identification structure.
Fig. 11-15 are cross-sectional views of structures illustrating major steps in a process for manufacturing an optical fingerprint identification structure according to another embodiment of the present application.
Detailed Description
In order to more clearly explain the present application, the present application is further described below with reference to the embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not intended to limit the scope of the present application.
In the description of the present application, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
It is further noted that, in the description of the present application, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
To solve the technical problems in the prior art, as shown in fig. 1 and 2, an embodiment of the present application provides an optical fingerprint identification structure 100, which includes a display area and a sensing area, wherein the display area includes a first TFT formed on a substrate 110 and a light emitting device driven by the first TFT to emit light, and the light emitting device emits light to a finger by being driven by the first TFT. The sensing region includes a second TFT130, a PIN photodiode 140, and a capacitor 150 formed on the substrate, wherein the second TFT130 includes a source 131, a drain 132, an active region 133, a first metal portion 135 electrically connected to the drain 132 through a first via 134 on the side of the drain 132 away from the substrate, and a second metal portion 137 electrically connected to the source 131 through a second via 136 on the side of the source 131 away from the substrate 110.
As shown in fig. 1, the PIN photodiode 140 is used to receive light reflected by a finger fingerprint, convert the reflected light signal into an electrical signal, and store the electrical signal in the capacitor 150, and when the capacitor 150 is full, the second TFT130 is turned on and drives the capacitor 150 to discharge, and the amount of the electrical signal in the capacitor 150 is detected, thereby realizing fingerprint recognition.
In addition, the PIN photodiode 140 includes an N-type doped region 141, a P-type doped region 142, an intrinsic region 143 between the N-type doped region 141 and the P-type doped region 142, a third metal portion 145 electrically connected to the P-type doped region 142 through a third via 144 on the side of the P-type doped region 142 away from the substrate 110, and a fourth metal portion 147 electrically connected to the N-type doped region 141 through a fourth via 146 on the side of the N-type doped region 141 away from the substrate 110, wherein the P-type doped region 142 is electrically connected to the source 131.
In one specific example, the N-type doped region 141 may be formed of N-type impurities (e.g., PH)3Phosphine) doped N-type semiconductor material region; in another specific example, the P-type doped region 142 may be formed of P-type impurities (e.g., BF)3Boron trichloride) doped P-type semiconductor material region; in yet another specific example, the Intrinsic region 143 is a low-doped Intrinsic (Intrinsic) semiconductor material region, i.e., a type I semiconductor material region.
Compared with the PIN photodiode in the prior art, which is generally an N-type semiconductor material layer, an I-type semiconductor material layer and a P-type semiconductor material layer that are sequentially stacked, the PIN photodiode in this embodiment is laterally disposed, that is, the N-type doped region 141, the P-type doped region 142 and the intrinsic region 143 in the PIN photodiode 140 are located on the same layer, and the doping process is performed on the N-type doped region 141 and the P-type doped region 142 on the same layer to form the PIN photodiode 140, so that the forming process of the PIN photodiode 140 is simplified, the thickness of the PIN photodiode 140 is reduced, and the overall thickness of the optical fingerprint identification structure 100 is reduced.
The doping process may be an ion implantation process or a diffusion process. In one specific example, an ion implantation process having various impurities doped into different semiconductors at a relatively low temperature may be employed, thereby precisely controlling the concentration distribution and implantation depth of the doped ions and achieving uniform doping over a large area.
Further, the capacitor 150 in this embodiment includes, as a first plate of the capacitor 150, a fifth metal portion 152 electrically connected to the fourth metal portion 147 through a fifth via 151 on the side of the fourth metal portion 147 away from the substrate 110, wherein the fifth metal portion 152 extends toward the second TFT130 side, so that an orthogonal projection of the fifth metal portion 152 on the substrate 110 covers orthogonal projections of the second metal portion 137 and the third metal portion 145 on the substrate 110, and the second metal portion 137 and the third metal portion 145 serve as a second plate of the capacitor 150.
As shown in fig. 2, the optical identification structure 100 of this embodiment uses the first TFT to drive the light emitting device to emit light to a finger, after the light is reflected by a finger print, the reflected light is refracted by the fifth metal portion 152 and then enters the intrinsic region 143 of the PIN photodiode 140, i.e., the I-type semiconductor material region, after the PIN photodiode converts the 140 reflected light signal into an electrical signal, the electrical signal is stored on the first plate and the second plate of the capacitor 150 through the second metal portion 137, the third metal portion 145 and the fifth metal portion 152, when the capacitor 150 is fully charged with electrical energy, the second TFT130 is turned on and drives the capacitor 150 to discharge, and the amount of the electrical signal in the capacitor 150 is detected, thereby implementing the finger print identification.
The optical fingerprint identification structure 100 of this embodiment is transversely provided with the PIN photodiode 140, the fifth metal part 152, the second metal part 137 and the third metal part 145 to form the first electrode plate and the second electrode plate of the capacitor 150, respectively, so that light reflected by a fingerprint enters the intrinsic region 143 through the fifth metal part 152, and the entire thickness of the optical fingerprint identification structure 100 is not increased while the fingerprint identification function is realized, thereby being beneficial to the thinning of the optical fingerprint identification structure 100 and effectively improving the integration level of the optical fingerprint identification structure 100; and the PIN photodiode 140 is arranged transversely, compared with the conventional photodiode arranged in a stacked manner, the PIN photodiode can be formed on the same layer, the forming process of the structure and the complexity of the optical identification structure 100 are simplified, and the compatibility with the preparation process of the conventional OLED structure is higher.
In one specific embodiment, as shown in fig. 2, the P-type doped region 142 is electrically connected to the source 131 through the second metal portion 137 and the third metal portion 145. In another specific embodiment, as shown in fig. 3, the P-type doped region 142 and the source 131 are the same region, the second via 136 and the third via 144 are the same via, and the second metal portion 137 and the third metal portion 145 are the same metal portion, that is, the PIN photodiode 140 and the second TFT130 share one electrode and do not need to be connected through other layers or metal portions, so as to save materials and manufacturing cost, simplify the formation process of the PIN photodiode 140 and the second TFT130, further simplify the manufacturing process of the optical fingerprint identification structure 100, and improve the manufacturing efficiency of the optical fingerprint identification structure 100; meanwhile, this embodiment may also effectively improve the contact resistance between the PIN photodiode 140 and the second TFT130, thereby improving the fingerprint recognition accuracy and recognition sensitivity of the optical fingerprint recognition structure 100.
In one embodiment, as shown in fig. 4, a first opening 153 is formed in the fifth metal part 152, and an orthogonal projection of the first opening 153 on the substrate 110 covers an orthogonal projection of the intrinsic region 143 on the substrate 110, so that reflected light reflected by a finger fingerprint can be directly incident on the intrinsic region 143 from the first opening 153 formed in the fifth metal part 152 without being refracted by the fifth metal part 152, thereby reducing loss of the reflected light, increasing the amount of the reflected light incident on the intrinsic region 143 of the PIN photodiode 140, increasing the utilization rate of the light and the incident amount of the PIN photodiode 140, and enhancing the sensitivity of optical fingerprint identification. Meanwhile, by forming the first opening 153 in the fifth metal part 152, for example, forming the first opening 153 in the center of the first plate of the capacitor 150, the first plate is formed into a ring-shaped capacitor, so that the capacitance area of the capacitor 150 is increased, the storage capacity of the capacitor 150 is increased, and the fingerprint identification precision of the optical fingerprint identification structure 100 is further improved.
In a specific embodiment, as shown in fig. 4, the fourth metal part 147 includes a connection portion 1471 and first and second extension portions 1472 and 1473 extending toward the second TFT130 side in a direction parallel to the substrate 110, wherein the connection portion 1471 connects the first and second extension portions 1472 and 1473 to form a shape similar to "Jiong", the third metal part 145 is formed between the first and second extension portions 1472 and 1473 and extends toward the PIN photodiode 140 side, the structure is such that the second plate of the capacitor 150 is divided into two sub-plates, that is, the second and third metal parts 137 and 145 are first sub-plates, the first and third extension portions 1472 and 1473 and the connection portion 1471 are second sub-plates, and the fifth metal part 152 is electrically connected to the connection portion 1471 through the fifth via 151. Moreover, the distance between the third metal portion 145 and the connection portion 1471, the distance between the third metal portion 145 and the first extension portion 1472, and the distance between the third metal portion 145 and the second extension portion 1473 make the second plate form an annular capacitor, which further increases the capacitance area of the capacitor 150, increases the storage capacity of the capacitor 150, and further improves the fingerprint recognition accuracy of the optical fingerprint recognition structure 100.
In this embodiment, an orthographic projection of the first opening 153 on the substrate 110 covers an orthographic projection of an interval between the third metal portion 145 and the connection portion 1471 on the substrate 110, such as a through hole 148 formed between the third metal portion 145 and the connection portion 1471. The area of the first opening 153 may be greater than or equal to the interval between the third metal part 145 and the connection part 1471. In a specific example, the area of the first opening 153 is larger than the area of the space between the third metal part 145 and the connection part 1471, and the first opening 153 and the space between the third metal part 145 and the connection part 1471 form an inverted trapezoidal structure. In another specific example, the area of the first opening 153 is the same as the area of the space between the third metal portion 145 and the connection portion 1471, and is equal to the area of the intrinsic region 153 of the PIN photodiode 140, and since the PIN photodiode 140 is located at a lower position in the optical recognition structure 100, a collimating structure may be formed by the arrangement of the first opening 153 and the space between the third metal portion 145 and the connection portion 1471, so as to block stray light from being incident into the intrinsic region 143 of the PIN photodiode 140, reduce interference of the stray light, and improve recognition accuracy of fingerprint recognition.
The collimating structure mentioned above refers to a structure that only allows light rays incident in the vertical direction to enter and blocks light rays incident at a large angle from the side. In this embodiment, a PIN photodiode 140 is provided in the vicinity of each light emitting device to receive light emitted from the light emitting device and reflected by a finger fingerprint. In one specific example, the pitch distance between the PIN photodiode 140 and the light emitting device is less than 50 μm. Therefore, in this specific example, most of the light emitted by the light emitting device and reflected by the finger fingerprint can be regarded as light incident in the vertical direction, that is, the part of the light incident in the vertical direction is signal light, and the light incident on the periphery (such as the light incident at a large angle from the side) can be regarded as stray light, such as ambient light. Therefore, the collimating structure is arranged to prevent light rays incident from a large angle on the side surface from entering, namely, stray light is prevented from entering the PIN photodiode, so that the stray light is filtered, and light rays (signal light) incident in the vertical direction are ensured to be incident into the PIN photodiode 140, so that the signal quantity of the PIN photodiode is increased.
As shown in fig. 5, fig. 5 shows a light ray diagram of a collimating structure, wherein fig. 5 shows three incident light rays, including a first light ray 201 incident in a vertical direction and a second light ray 202 and a third light ray 203 incident from a side at a large angle, wherein the first light ray 201 is effective light, and the second light ray 202 and the third light ray 203 are stray light caused by ambient light. As shown in fig. 5, when the second light 202 and the third light 203 are incident on the collimating structure, the second light 202 is blocked by the fifth metal portion 152, and the third light 203 passes through the first opening 153 of the fifth metal portion 152 and is blocked by the third metal portion 145, so as to filter the stray light. And vertical incident ambient light often can directly be sheltered from by the finger, can't incide in the collimation structure, consequently, vertical incident ambient light's light can be neglected, so, the light of inciding along vertical direction is basically all through emitting device transmission to the finger, signal light through finger fingerprint reflection.
In this embodiment, the first opening 153 and the space between the third metal part 145 and the connection portion 1471 are arranged to form a collimating structure, and the fifth metal part 152 and the third metal part 145 block stray light incident from a large angle on the side surface, so as to filter the stray light, reduce interference of the stray light, improve the signal quantity of light incident into the PIN photodiode 140, and enhance the recognition accuracy of fingerprint recognition.
In one specific embodiment, the optical fingerprint identification structure 100 further includes a pixel defining layer 160 formed on the fifth metal part 152, and a second opening 161 formed in the pixel defining layer 160, the second opening 161 corresponding to the first opening 153.
In one specific example, the material of the pixel defining layer 160 may be silicon, silicon nitride, barium sulfate, aluminum oxide, magnesium oxide, polyimide, epoxy resin, polyphenylene oxide, and the like, but the exemplary embodiments of the present application are not limited thereto.
This implementation is through setting up the second opening 160 corresponding with first opening 153 to first opening 153 and second opening 161 form the collimation structure, and pixel definition layer 160 shelters from the stray light of the incidence of side wide-angle, thereby filters stray light, reduces stray light's interference, improves the semaphore of the light of incidenting in PIN photodiode 140, thereby reinforcing fingerprint identification's identification precision.
In a specific embodiment, the optical fingerprint identification structure 100 includes the first opening 153, the second opening 161 corresponding to the first opening 153, the third metal portion 145 and the connection portion 1471, so that the first opening 153, the second opening 161, the third metal portion 145 and the connection portion 1471 form a collimating structure at intervals, and the fifth metal portion 152, the third metal portion 145, the connection portion 1471 and the pixel defining layer 160 block stray light incident at a large angle from the side, further filter the stray light, reduce interference of the stray light, further improve the signal quantity of light incident into the PIN photodiode 140, and thereby enhance the identification accuracy of fingerprint identification.
In one embodiment, the optical fingerprint identification structure 100 further includes a polysilicon layer formed on the substrate 110, wherein the source electrode 121 and the drain electrode 122 of the first TFT, the source electrode 131 and the drain electrode 132 of the second TFT130, the N-type doped region 141 and the P-type doped region 142 are doped regions formed in the polysilicon layer; the intrinsic region 143 and the active regions 123, 133 of the first and second TFTs 130 are undoped regions in the polysilicon layer. This embodiment simplifies the formation process of the PIN photodiode 140 and reduces the thickness of the PIN photodiode 140 by providing a polysilicon layer such that the source 121 and drain 122 of the first TFT, the source 131 and drain 132 of the second TFT130, the N-type and P-type doped regions 141 and 142, the intrinsic region 143, and the active regions 123 and 133 of the first and second TFTs are formed on the same layer.
In a specific embodiment, the first TFT includes a sixth metal portion 125 electrically connected to its source 121 through a sixth via 124 on the side of its source 121 remote from the substrate 110 and a seventh metal portion 127 electrically connected to its drain 122 through a seventh via 126 on the side of its drain 122 remote from the substrate 110; the light emitting device includes an anode 181 electrically connected to the drain electrode 122 of the first TFT through an eighth via 180.
In a specific embodiment, the fifth metal part 152 is disposed on the same layer as the anode 181; the first metal portion 135 to the fourth metal portion 147 and the sixth metal portion 125 to the seventh metal portion 127 are disposed in the same layer. That is, the anode 181 and the fifth metal portion 152 may be formed simultaneously by the same forming process, and the first metal portion 135 to the fourth metal portion 147 and the sixth metal portion 125 to the seventh metal portion 127 may be formed simultaneously by the same forming process, so as to be well matched with the manufacturing process in the prior art, and simplify the design of the forming process.
Another embodiment of the present application provides a method for manufacturing an optical fingerprint identification structure 100, including:
s101, forming a polysilicon layer on the substrate 110, and forming an active region 123 of the first TFT, an active region 133 of the second TFT130, and an intrinsic region 143 of the PIN photodiode 140 in a region where the polysilicon layer forms a display region and a region where the sensing region is formed, to form the structure shown in fig. 6.
S102, doping both ends of the active region 123 of the first TFT to form the source electrode 121 and the drain electrode 122 of the first TFT, doping both ends of the active region 133 of the second TFT130 to form the source electrode 131 and the drain electrode 132 of the second TFT130, and forming the N-type doped region 141, the P-type doped region 142, and the intrinsic region 143 of the PIN photodiode 140 to form the structure as shown in fig. 7.
Specifically, the PIN photodiode 140 is formed on the polysilicon layer, i.e., the PIN photodiode 140 is formed by doping the polysilicon layer with an N-type doped region 141 and a P-type doped region 142, for example, by an ion implantation process at both ends of the intrinsic region 143 of the PIN photodiode 140. In one specific example, the P-type doped region 142 can be formed by doping P-type impurities (e.g., BF)3Boron trichloride) at an implant dose of 1E11-1E13atom/cm2. In another specific example, the N-type doped region 141 may be formed by doping N-type impurities (e.g., PH)3Phosphine) with an implant dose of 1E11-1E13atom/cm2. The ion implantation process shields the sight through the patterned photoresist, and the patterned photoresist can be prepared through an exposure process.
S103, forming an insulating layer 170 and a dielectric layer 190 covering the source electrode 121, the drain electrode 122 and the active region 123 of the first TFT, the source electrode 131, the drain electrode 132 and the active region 133 of the second TFT130 and the PIN photodiode 140, and a first metal part 135 electrically connected to the drain electrode 132 of the second TFT130 through the first via 134, a second metal part 137 electrically connected to the source electrode 131 of the second TFT130 through the second via 136, a third metal part 145 electrically connected to the P-type doped region 142 through the third via 144, a fourth metal part 147 electrically connected to the N-type doped region 141 through the fourth via 146, a sixth metal part 125 electrically connected to the source electrode 121 of the first TFT through the sixth via 124, and a seventh metal part 127 electrically connected to the drain electrode 122 of the first TFT through the seventh via 126 are formed on the dielectric layer 190 to form the structure shown in fig. 8, wherein the P-type doped region 142 is electrically connected to the source 131 through the second metal portion 137 and the third metal portion 145.
And S104, forming a planarization layer 1100, and forming a fifth metal part 152 electrically connected with the fourth metal part 147 through the fifth via 151 and an anode 181 electrically connected with the drain electrode 122 of the first TFT through the eighth via 180 on the planarization layer 1100. Wherein a first opening 153 is formed in the fifth metal portion 152, and an orthogonal projection of the first opening 153 on the substrate 110 covers an orthogonal projection of the intrinsic region 143 on the substrate 110, so as to form the structure shown in fig. 9.
S105, forming a pixel defining layer 160, forming a second opening 161 corresponding to the first opening 153 on the pixel defining layer 160, and forming a hole in the area where the display region is formed to expose the anode 181, so as to form the structure shown in fig. 10.
S106, the encapsulation layer 1200 is covered, and the structure shown in fig. 2 is formed.
Another embodiment of the present application provides a method for manufacturing an optical fingerprint identification structure, including:
s201, forming a polysilicon layer on the substrate 110, and forming an active region 123 and an undoped region 300 of the first TFT in a region where the polysilicon layer forms the display region and a region where the sensing region is formed, to form the structure as shown in fig. 11.
S202, doping both ends of the active region 123 of the first TFT to form the source electrode 121 and the drain electrode 122 of the first TFT, and doping both ends of the undoped region 300 to form the second TFT130 and the PIN photodiode 140 to form the structure as shown in fig. 12. The P-type doped region 142 of the PIN photodiode 140 is the same as the source 131 of the second TFT 130.
S203, forming an insulating layer 170 covering the source 121, the drain 122 and the active region 123 of the first TFT, the source 131, the drain 132 and the active region 133 of the second TFT130, and the PIN photodiode 140, a dielectric layer 190, and forming a first metal part 135 electrically connected to the drain 132 of the second TFT130 through the first via 134, a second metal part 137 electrically connected to the source 131 of the second TFT130 through the second via 136, a third metal part 145 electrically connected to the P-type doped region 142 through the third via 144, a fourth metal part 147 electrically connected to the N-type doped region 141 through the fourth via 146, a sixth metal part 125 electrically connected to the source 121 of the first TFT through the sixth via 124, and a seventh metal part 127 electrically connected to the drain 122 of the first TFT through the seventh via 126 on the dielectric layer 190 to form the structure shown in fig. 13. The second via 136 and the third via 144 are the same via, and the second metal portion 137 and the third metal portion 145 are the same metal portion.
S204, forming a planarization layer 1100, and forming a fifth metal portion 152 electrically connected to the fourth metal portion 147 through the fifth via 151 and an anode 181 electrically connected to the drain electrode 122 of the first TFT through the eighth via 180 on the planarization layer 1100. Wherein a first opening 153 is formed in the fifth metal part 152, and an orthogonal projection of the first opening 153 on the substrate 110 covers an orthogonal projection of the intrinsic region 143 on the substrate 110, so as to form the structure shown in fig. 14.
S205, forming a pixel defining layer 160, forming a second opening 161 corresponding to the first opening 153 on the pixel defining layer 160, and forming a hole in the area where the display region is formed to expose the anode 181, so as to form the structure shown in fig. 15.
S206, the encapsulation layer 1100 is covered, and the structure shown in fig. 3 is formed.
Yet another embodiment of the present application provides a display device, which includes a plurality of optical fingerprint recognition structures 100 as provided in the above embodiments. The display device may be any product or component having a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigator, which is not limited in this embodiment.
It should be understood that the above-mentioned examples are given for the purpose of illustrating the present application clearly and not for the purpose of limiting the same, and that various other modifications and variations of the present invention may be made by those skilled in the art in light of the above teachings, and it is not intended to be exhaustive or to limit the invention to the precise form disclosed.
Claims (11)
1. An optical fingerprint identification structure comprises a display area and a sensing area, and is characterized in that
The display area includes:
a first TFT formed on the substrate;
a light emitting device driven by the first TFT to emit light;
the sensing region includes:
a second TFT, a PIN photodiode, and a capacitor formed on the substrate,
wherein the content of the first and second substances,
the second TFT includes a source, a drain, an active region, a first metal portion electrically connected to the drain at a side of the drain remote from the substrate through a first via, and a second metal portion electrically connected to the source at a side of the source remote from the substrate through a second via;
the PIN photodiode comprises an N-type doped region, a P-type doped region, an intrinsic region between the N-type doped region and the P-type doped region, a third metal part electrically connected with the P-type doped region through a third through hole on the side of the P-type doped region far away from the substrate, and a fourth metal part electrically connected with the N-type doped region through a fourth through hole on the side of the N-type doped region far away from the substrate, wherein the P-type doped region is electrically connected with a source electrode;
the capacitor includes a fifth metal portion electrically connected to the fourth metal portion through a fifth via hole on the side of the fourth metal portion away from the substrate as a first plate of the capacitor, wherein the fifth metal portion extends toward the second TFT side so that an orthographic projection of the fifth metal portion on the substrate covers orthographic projections of the second metal portion and the third metal portion on the substrate, the second metal portion and the third metal portion serving as a second plate of the capacitor.
2. The optical fingerprint identification structure of claim 1, wherein the P-type doped region and the source are electrically connected through the second metal portion and the third metal portion.
3. The optical fingerprint identification structure of claim 1, wherein the P-type doped region and the source are the same region, the second via and the third via are the same via, and the second metal portion and the third metal portion are the same metal portion.
4. The optical fingerprint identification structure of any one of claims 1 to 3, wherein a first opening is formed in the fifth metal portion, and an orthographic projection of the first opening on the substrate covers an orthographic projection of the intrinsic region on the substrate.
5. The optical fingerprint recognition structure of claim 4,
the fourth metal part comprises
A connecting portion;
a first extension portion and a second extension portion extending toward the second TFT side in a direction parallel to the substrate,
wherein the connection portion connects the first extension portion and the second extension portion, the third metal portion is formed between the first extension portion and the second extension portion, extending toward the PIN photodiode side,
wherein an orthographic projection of the first opening on the substrate covers an orthographic projection of a space between the third metal portion and the connecting portion on the substrate.
6. The optical fingerprint recognition structure of claim 4, further comprising
A pixel defining layer formed on the fifth metal part;
a second opening formed in the pixel defining layer corresponding to the first opening.
7. The optical fingerprint identification structure of claim 1, further comprising
A polysilicon layer formed on the substrate, wherein,
the source electrode, the drain electrode, the N-type doped region and the P-type doped region are doped regions formed in the polycrystalline silicon layer;
the intrinsic region and the active region are undoped regions in the polysilicon layer.
8. The optical fingerprint recognition structure of claim 1,
the first TFT includes a sixth metal portion electrically connected to a source thereof at a source remote substrate side thereof through a sixth via and a seventh metal portion electrically connected to a drain thereof at a drain remote substrate side thereof through a seventh via;
the light emitting device includes an anode electrically connected to a drain electrode of the first TFT through an eighth via hole.
9. The optical fingerprint recognition structure of claim 8,
the fifth metal part and the anode are arranged on the same layer;
the first to fourth metal portions and the sixth to seventh metal portions are disposed on the same layer.
10. A display device comprising a plurality of optical fingerprint recognition structures according to any one of claims 1 to 9 arranged in an array.
11. A method for manufacturing an optical fingerprint identification structure is characterized by comprising the following steps:
forming a first TFT and a light emitting device driven by the first TFT to emit light in a region where a display region is formed on a substrate;
forming a second TFT, a PIN photodiode and a capacitor in a region where the sensing region is formed on the substrate, wherein
The second TFT is formed to include a source, a drain, an active region, a first metal portion electrically connected to the drain at the drain remote substrate side through a first via, and a second metal portion electrically connected to the source at the source remote substrate side through a second via;
the PIN photodiode is formed to include an N-type doped region, a P-type doped region, an intrinsic region between the N-type doped region and the P-type doped region, a third metal portion electrically connected to the P-type doped region through a third via at a position away from the substrate side of the P-type doped region, and a fourth metal portion electrically connected to the N-type doped region through a fourth via at a position away from the substrate side of the N-type doped region, wherein the P-type doped region is electrically connected to the source;
the capacitor is formed to include, as a first plate of the capacitor, a fifth metal portion electrically connected to the fourth metal portion through a fifth via on the side of the fourth metal portion away from the substrate, wherein the fifth metal portion extends toward the second TFT side so that an orthographic projection of the fifth metal portion on the substrate covers orthographic projections of the second metal portion and the third metal portion on the substrate, the second metal portion and the third metal portion serving as a second plate of the capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011373469.1A CN112507828A (en) | 2020-11-30 | 2020-11-30 | Optical fingerprint identification structure, manufacturing method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011373469.1A CN112507828A (en) | 2020-11-30 | 2020-11-30 | Optical fingerprint identification structure, manufacturing method thereof and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112507828A true CN112507828A (en) | 2021-03-16 |
Family
ID=74968694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011373469.1A Pending CN112507828A (en) | 2020-11-30 | 2020-11-30 | Optical fingerprint identification structure, manufacturing method thereof and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112507828A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113354A (en) * | 2021-03-18 | 2021-07-13 | 武汉华星光电技术有限公司 | Optical device, preparation method thereof and display panel |
| WO2022236868A1 (en) * | 2021-05-08 | 2022-11-17 | 武汉华星光电技术有限公司 | Array substrate |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060933A1 (en) * | 2004-09-20 | 2006-03-23 | Xiang Gao | PIN diode structure with zinc diffusion region |
| CN1894798A (en) * | 2003-12-15 | 2007-01-10 | 皇家飞利浦电子股份有限公司 | Active matrix pixel device with photo sensor |
| CN108321152A (en) * | 2018-04-04 | 2018-07-24 | 京东方科技集团股份有限公司 | Fingerprint Identification sensor and preparation method thereof and fingerprint identification device |
| CN108470758A (en) * | 2018-04-27 | 2018-08-31 | 上海天马有机发光显示技术有限公司 | Organic light emitting display panel and display device |
| CN108615019A (en) * | 2018-04-28 | 2018-10-02 | 上海天马有机发光显示技术有限公司 | A kind of display panel and display device |
| CN108733260A (en) * | 2018-04-27 | 2018-11-02 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
| CN109686774A (en) * | 2019-01-04 | 2019-04-26 | 京东方科技集团股份有限公司 | A kind of organic light emitting display panel and its manufacturing method |
| CN110046610A (en) * | 2019-04-28 | 2019-07-23 | 云谷（固安）科技有限公司 | A kind of fingerprint recognition display device and preparation method thereof, display equipment |
| CN110265509A (en) * | 2019-07-02 | 2019-09-20 | 京东方科技集团股份有限公司 | A kind of photoelectric detector, and preparation method thereof, display panel and display device |
| CN110890388A (en) * | 2019-11-28 | 2020-03-17 | 昆山国显光电有限公司 | Array substrate and display panel |
| CN110970512A (en) * | 2019-12-04 | 2020-04-07 | 暨南大学 | Visible light wide-spectrum high-efficiency PIN photodiode and preparation method thereof |
-
2020
- 2020-11-30 CN CN202011373469.1A patent/CN112507828A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1894798A (en) * | 2003-12-15 | 2007-01-10 | 皇家飞利浦电子股份有限公司 | Active matrix pixel device with photo sensor |
| US20060060933A1 (en) * | 2004-09-20 | 2006-03-23 | Xiang Gao | PIN diode structure with zinc diffusion region |
| CN108321152A (en) * | 2018-04-04 | 2018-07-24 | 京东方科技集团股份有限公司 | Fingerprint Identification sensor and preparation method thereof and fingerprint identification device |
| CN108470758A (en) * | 2018-04-27 | 2018-08-31 | 上海天马有机发光显示技术有限公司 | Organic light emitting display panel and display device |
| CN108733260A (en) * | 2018-04-27 | 2018-11-02 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
| CN108615019A (en) * | 2018-04-28 | 2018-10-02 | 上海天马有机发光显示技术有限公司 | A kind of display panel and display device |
| CN109686774A (en) * | 2019-01-04 | 2019-04-26 | 京东方科技集团股份有限公司 | A kind of organic light emitting display panel and its manufacturing method |
| CN110046610A (en) * | 2019-04-28 | 2019-07-23 | 云谷（固安）科技有限公司 | A kind of fingerprint recognition display device and preparation method thereof, display equipment |
| CN110265509A (en) * | 2019-07-02 | 2019-09-20 | 京东方科技集团股份有限公司 | A kind of photoelectric detector, and preparation method thereof, display panel and display device |
| CN110890388A (en) * | 2019-11-28 | 2020-03-17 | 昆山国显光电有限公司 | Array substrate and display panel |
| CN110970512A (en) * | 2019-12-04 | 2020-04-07 | 暨南大学 | Visible light wide-spectrum high-efficiency PIN photodiode and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113354A (en) * | 2021-03-18 | 2021-07-13 | 武汉华星光电技术有限公司 | Optical device, preparation method thereof and display panel |
| WO2022236868A1 (en) * | 2021-05-08 | 2022-11-17 | 武汉华星光电技术有限公司 | Array substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110427931B (en) | Array substrate and display device | |
| CN112596294B (en) | Display device, display panel and manufacturing method thereof | |
| CN112507828A (en) | Optical fingerprint identification structure, manufacturing method thereof and display device | |
| CN111781777B (en) | Array substrate, display panel and electronic equipment | |
| CN108830168B (en) | Display panel and display device | |
| CN112563308A (en) | Display substrate, preparation method thereof and display device | |
| CN112616321A (en) | Display substrate, manufacturing method thereof and display device | |
| CN112420791A (en) | Fingerprint identification substrate, preparation method thereof and display device | |
| CN112054017B (en) | Display panel, preparation method and display device | |
| US11783618B2 (en) | Fingerprint sensor, method for manufacturing fingerprint sensor, and display device including fingerprint sensor | |
| CN111509010B (en) | OLED display substrate and preparation method thereof | |
| CN112420617A (en) | Preparation method of display panel and display panel | |
| CN111370524B (en) | Photosensitive sensor, preparation method thereof, array substrate and display panel | |
| CN111627969A (en) | Display substrate, manufacturing method, display panel and display device | |
| CN113345917B (en) | Array substrate, manufacturing method thereof and display panel | |
| CN112420618B (en) | Display panel and preparation method thereof | |
| US20230354624A1 (en) | Array substrate, display panel, and display device | |
| CN109950358B (en) | Photoelectric detection structure and manufacturing method thereof | |
| CN113764492A (en) | Display panel, manufacturing method thereof and display device | |
| US20210151476A1 (en) | Photosensor, display apparatus, and method of fabricating photosensor | |
| CN111785766A (en) | Display device, display panel and preparation method thereof | |
| CN114823824B (en) | Transparent display panel and transparent display device | |
| CN215642744U (en) | Grain identification module and display device | |
| WO2023102992A1 (en) | Display panel and manufacturing method therefor | |
| US11659761B2 (en) | Display panel and display device including multi-polymer layer substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |