CN112504502A - Discrete semiconductor circuit and power electronic device - Google Patents
Discrete semiconductor circuit and power electronic device Download PDFInfo
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- CN112504502A CN112504502A CN202011435474.0A CN202011435474A CN112504502A CN 112504502 A CN112504502 A CN 112504502A CN 202011435474 A CN202011435474 A CN 202011435474A CN 112504502 A CN112504502 A CN 112504502A
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- thermistor
- semiconductor device
- power supply
- temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
- G01K7/24—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor in a specially-adapted circuit, e.g. bridge circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
Abstract
The invention discloses a discrete semiconductor circuit, which comprises a processor and a semiconductor working unit; the semiconductor working unit comprises a discrete packaged semiconductor device, a gate driving power supply, a thermistor, a divider resistor and an electric signal detection assembly; the divider resistor and the thermistor are connected in series to two ends of the gate pole driving power supply to form a closed loop; the KELVIN pin of the discrete packaged semiconductor device is connected between the thermistor and the cathode of the gate drive power supply; the electric signal detection assembly is used for acquiring the temperature electric signal of the closed loop and sending the temperature electric signal to the processor; the processor is used for determining the temperature information of the discrete packaged semiconductor device according to the temperature electric signal. The invention realizes the temperature measurement of a single discrete packaged semiconductor device and greatly improves the measurement precision. The invention also provides a power electronic device with the advantages.
Description
Technical Field
The present invention relates to the field of semiconductor circuits, and more particularly, to a discrete semiconductor circuit and a power electronic device.
Background
The semiconductor device can stably work within a certain temperature range, so that temperature detection becomes an important monitoring index of the semiconductor device. It is common practice to solder a thermistor on the copper substrate DCB. And, only one thermistor NTC is placed in one power module. In such a centralized temperature detection method, because the NTC has different distances from each heat source (i.e., a heat-generating semiconductor chip) (as shown in fig. 1), a large number of experiments are required to determine a complex junction temperature estimation model, so as to perform temperature detection. And, in addition, the main path for heat conduction from the semiconductor junction to the NTC is as shown in fig. 2. The heat is first conducted down to the metal substrate, then diffused on the metal substrate under the NTC, and then conducted up to the NTC. The whole heat flow conduction path passes through a plurality of material interfaces, the intermediate heat is excessively dissipated, and the junction temperature detection accuracy is further reduced.
While for discrete semiconductor package devices, limited by the number of pins and cost, discrete power semiconductor devices typically do not include temperature sensing functionality. In actual use, the NTC is mounted on a heat sink common to a plurality of discrete power semiconductor devices, similarly to the power module described above, and junction temperature is inversely deduced by detecting the temperature of the heat sink. It can be seen that this method is still a centralized temperature detection method. Since the plurality of discrete power semiconductor devices (heat sources) are exposed to the outside, the operating environment is not even as stable as the power module, and the accuracy of temperature detection is further reduced.
In summary, how to solve the problems that the temperature measurement cannot be performed on a single discrete semiconductor device and the temperature measurement accuracy is low in the prior art is a critical task for those skilled in the art.
Disclosure of Invention
The invention aims to provide a discrete semiconductor circuit and a power electronic device, and aims to solve the problems that the temperature of a single discrete semiconductor device cannot be measured and the temperature measurement accuracy is low in the prior art.
In order to solve the above technical problem, the present invention provides a discrete semiconductor circuit, which includes a processor and a semiconductor operating unit;
the semiconductor working unit comprises a discrete packaged semiconductor device, a gate driving power supply, a thermistor, a divider resistor and an electric signal detection assembly;
the divider resistor and the thermistor are connected in series to two ends of the gate pole driving power supply to form a closed loop;
the KELVIN pin of the discrete packaged semiconductor device is connected between the thermistor and the cathode of the gate drive power supply;
the electric signal detection assembly is used for acquiring the temperature electric signal of the closed loop and sending the temperature electric signal to the processor;
the processor is used for determining the temperature information of the discrete packaged semiconductor device according to the temperature electric signal.
Optionally, in the discrete semiconductor circuit, the electrical signal detection component is a voltage detection component;
the voltage component is connected to two ends of the thermistor and used for detecting the voltage value of the thermistor.
Optionally, in the discrete semiconductor circuit, the voltage divider and the thermistor are connected in series across the gate driving power supply to form a closed loop, and the closed loop includes:
the positive pole of gate pole drive power supply is connected with the first end of divider resistor, the second end of divider resistor is connected with the first end of thermistor, the second end of thermistor is connected with the negative pole of gate pole drive power supply.
Optionally, in the discrete semiconductor circuit, when the discrete packaged semiconductor device is a MOSFET, the KELVIN pin is connected to a source region of the MOSFET;
when the discrete packaged semiconductor device is the IGBT or the triode, the KELVIN pin is connected with an emitter region of the IGBT or the triode.
Optionally, in the discrete semiconductor circuit, the KELVIN pin is directly connected to a corresponding region in the discrete packaged semiconductor device through a binding line.
Optionally, in the discrete semiconductor circuit, the voltage dividing resistor is a high-precision resistor.
Optionally, in the discrete semiconductor circuit, the discrete packaged semiconductor device is a TO247 package.
Optionally, in the discrete semiconductor circuit, the processor is a gate driving chip corresponding to the gate driving power supply.
Optionally, in the discrete semiconductor circuit, the discrete semiconductor circuit includes a plurality of semiconductor working units; the semiconductor working unit further comprises an isolator;
the processor respectively obtains the temperature information of the discrete packaged semiconductor devices corresponding to the semiconductor working units through the plurality of isolators.
A power electronic device comprising a discrete semiconductor circuit as claimed in any one of the preceding claims.
The invention provides a discrete semiconductor circuit, which comprises a processor and a semiconductor working unit; the semiconductor working unit comprises a discrete packaged semiconductor device, a gate driving power supply, a thermistor, a divider resistor and an electric signal detection assembly; the divider resistor and the thermistor are connected in series to two ends of the gate pole driving power supply to form a closed loop; the KELVIN pin of the discrete packaged semiconductor device is connected between the thermistor and the cathode of the gate drive power supply; the electric signal detection assembly is used for acquiring the temperature electric signal of the closed loop and sending the temperature electric signal to the processor; the processor is used for determining the temperature information of the discrete packaged semiconductor device according to the temperature electric signal.
According to the invention, the closed loop is driven by using the gate driving power supply corresponding to the discrete packaged semiconductor device, meanwhile, the heat energy of the semiconductor packaged device is directly guided to the thermistor by using the KELVIN pin, so that the difference between the temperature of the thermistor and the temperature of the discrete packaged semiconductor is further reduced, at the moment, the resistance value change of the thermistor can be known by acquiring the electric signal of the closed loop, and further the high-precision temperature information of the discrete packaged semiconductor device is obtained, thus the temperature measurement of a single discrete packaged semiconductor device is realized, and the measurement precision is greatly improved. The invention also provides a power electronic device with the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a centralized temperature detection in the prior art;
FIG. 2 is a schematic diagram illustrating heat transfer during heat transfer from a semiconductor to an NTC according to the prior art;
FIG. 3 is a schematic diagram of a discrete semiconductor circuit according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of another embodiment of a discrete semiconductor circuit according to the present invention;
fig. 5 is a schematic structural diagram of another embodiment of a discrete semiconductor circuit according to the present invention.
Detailed Description
The power semiconductor device is a core component of the power electronic technology, and no matter the power semiconductor device is a silicon-based power semiconductor device, or a silicon carbide-based power semiconductor device and a gallium nitride-based power semiconductor device, the Junction temperature of a semiconductor Junction (P-N Junction) of the power semiconductor device is required to be lower than a certain value in the using process of the power semiconductor device, so that the semiconductor characteristics of the power semiconductor device are ensured. The maximum junction temperature of silicon-based devices is 175 degrees celsius and the maximum junction temperature of silicon carbide-based devices can exceed 200 degrees celsius. Therefore, in the power electronic converter, the junction temperature is detected in real time, and when the junction temperature is obviously increased, an active heat dissipation technology can be used to improve the heat dissipation capacity of a heat dissipation system; or when the junction temperature exceeds a set value, stopping the power electronic converter from working. Therefore, the real-time detection of the junction temperature of the power semiconductor device is a necessary function in various power electronic converters, and is an important means for improving the reliability of the power electronic converter.
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the present invention is to provide a discrete semiconductor circuit, wherein a schematic structural diagram of an embodiment thereof is shown in fig. 3, which is referred to as a first embodiment thereof, and includes a processor 100 and a semiconductor operating unit;
the semiconductor working unit comprises a discrete packaged semiconductor device 250, a gate driving power supply 210, a thermistor 230, a divider resistor 220 and an electric signal detection component 240;
the voltage dividing resistor 220 and the thermistor 230 are connected in series to two ends of the gate driving power supply 210 to form a closed loop;
the KELVIN pin of the discrete packaged semiconductor device 250 is connected between the thermistor 230 and the negative electrode of the gate driver 210;
the electric signal detection component 240 is configured to obtain an electric temperature signal of the closed loop, and send the electric temperature signal to the processor 100;
the processor 100 is configured to determine temperature information of the discrete packaged semiconductor device 250 according to the temperature electrical signal.
As a specific embodiment, the electrical signal detecting component 240 is a voltage detecting component;
the voltage components are connected to two ends of the thermistor 230, and are configured to detect a voltage value of the thermistor 230, and certainly, also detect a voltage value of the voltage dividing resistor 220 or a current value in the whole loop, and finally obtain a resistance value of the thermistor 230, so as to calculate a current temperature value of the thermistor 230, and express the temperature of the discrete packaged semiconductor device 250 by using the temperature of the thermistor 230.
In addition, the present invention further provides a specific connection manner of the closed loop, where the voltage-dividing resistor 220 and the thermistor 230 are connected in series to two ends of the gate driving power supply 210, and the closed loop includes:
the positive terminal of the gate driving power source 210 is connected to the first terminal of the voltage-dividing resistor 220, the second terminal of the voltage-dividing resistor 220 is connected to the first terminal of the thermistor 230, and the second terminal of the thermistor 230 is connected to the negative terminal of the gate driving power source 210.
It is noted that when the discrete packaged semiconductor device 250 is a MOSFET, the KELVIN pin is connected to the source region of the MOSFET;
when the discrete packaged semiconductor device 250 is the IGBT or the transistor, the KELVIN pin is connected to an emitter region of the IGBT or the transistor;
of course, the discrete packaged semiconductor device 250 may be other semiconductor devices besides the above examples, in which case the KELVIN pins are connected to the output terminal areas like the source and emitter regions.
As a preferred embodiment, the KELVIN pin is directly connected to the corresponding region of the discrete packaged semiconductor device 250 through a binding line;
the above "directly" means that the binding line connects the corresponding region of the discrete packaged semiconductor device 250 with the closed loop, and more specifically, the thermistor 230, without passing through other media or contacting with other structures, which can ensure that the heat of the semiconductor heating region is directly conducted to the thermistor 230 as much as possible, so that the temperature of the thermistor 230 is kept as consistent as possible with the temperature of the discrete packaged semiconductor device 250, and the measurement accuracy is improved.
In addition, the discrete packaged semiconductor device 250 is a TO247 package, the TO247 package has a simple structure, low cost and small occupied space, and other packages, such as SO-8 packages, can be selected according TO actual situations.
In order to improve the measurement accuracy, the voltage dividing resistor 220 may be a high-precision resistor, and the high-precision resistor indicates that the error between the nominal value and the measured value of the resistor is not more than 1%.
The discrete semiconductor circuit provided by the invention comprises a processor 100 and a semiconductor working unit; the semiconductor working unit comprises a discrete packaged semiconductor device 250, a gate driving power supply 210, a thermistor 230, a divider resistor 220 and an electric signal detection component 240; the voltage dividing resistor 220 and the thermistor 230 are connected in series to two ends of the gate driving power supply 210 to form a closed loop; the KELVIN pin of the discrete packaged semiconductor device 250 is connected between the thermistor 230 and the negative electrode of the gate driver 210; the electric signal detection component 240 is configured to obtain an electric temperature signal of the closed loop, and send the electric temperature signal to the processor 100; the processor 100 is configured to determine temperature information of the discrete packaged semiconductor device 250 according to the temperature electrical signal. According to the invention, the gate drive power supply 210 corresponding to the discrete packaged semiconductor device 250 is used for driving the closed loop, meanwhile, the heat energy of the semiconductor packaged device is directly guided to the thermistor 230 by using the KELVIN pin, so that the difference between the temperature of the thermistor 230 and the temperature of the discrete packaged semiconductor is further reduced, at the moment, the resistance value change of the thermistor 230 can be known by acquiring the electric signal of the closed loop, and further, the high-precision temperature information of the discrete packaged semiconductor device 250 is obtained, the temperature measurement of the single discrete packaged semiconductor device 250 is realized, and the measurement precision is greatly improved.
On the basis of the first embodiment, the processor 100 is further limited to obtain a second embodiment, which is shown in fig. 4 and includes the processor 100 and a semiconductor working unit;
the semiconductor working unit comprises a discrete packaged semiconductor device 250, a gate driving power supply 210, a thermistor 230, a divider resistor 220 and an electric signal detection component 240;
the voltage dividing resistor 220 and the thermistor 230 are connected in series to two ends of the gate driving power supply 210 to form a closed loop;
the KELVIN pin of the discrete packaged semiconductor device 250 is connected between the thermistor 230 and the negative electrode of the gate driver 210;
the electric signal detection component 240 is configured to obtain an electric temperature signal of the closed loop, and send the electric temperature signal to the processor 100;
the processor 100 is configured to determine temperature information of the discrete packaged semiconductor device 250 according to the temperature electrical signal;
the processor 100 is a gate driving chip 300 corresponding to the gate driving power supply 210.
In this embodiment, the processor 100 is the gate driving chip 300, and the gate driving chip 300 can directly output a digital signal representing the temperature of the discrete packaged semiconductor device 250, so as to measure the temperature in the gate circuit, thereby greatly enhancing the flexibility of assembling the discrete semiconductor circuit and improving the versatility of the discrete semiconductor circuit.
Since the gate driving chip 300 also has the function of measuring the electrical signal, the electrical signal detection device 240 is not shown in fig. 4, and the electrical signal detection device 240 and the processor 100 are both the gate driving chip 300.
Similarly, in the first embodiment, when a plurality of semiconductor working units are connected to the same processor 100, a third embodiment can be obtained, in which a schematic structural diagram is shown in fig. 5, and includes the processor 100 and the semiconductor working units;
the semiconductor working unit comprises a discrete packaged semiconductor device 250, a gate driving power supply 210, a thermistor 230, a divider resistor 220 and an electric signal detection component 240;
the voltage dividing resistor 220 and the thermistor 230 are connected in series to two ends of the gate driving power supply 210 to form a closed loop;
the KELVIN pin of the discrete packaged semiconductor device 250 is connected between the thermistor 230 and the negative electrode of the gate driver 210;
the electric signal detection component 240 is configured to obtain an electric temperature signal of the closed loop, and send the electric temperature signal to the processor 100;
the processor 100 is configured to determine temperature information of the discrete packaged semiconductor device 250 according to the temperature electrical signal;
the discrete semiconductor circuit includes a plurality of semiconductor working units; the semiconductor working unit further includes an isolator 260;
the processor 100 obtains temperature information of the discrete packaged semiconductor devices 250 corresponding to the plurality of semiconductor working units through the plurality of isolators 260.
In this embodiment, considering that a plurality of discrete semiconductor package devices are centrally disposed, and the gate driver chip 300 has a low cost and a poor calculation power, and is not suitable for directly processing the acquired temperature electrical signals, the temperature electrical signals corresponding to the plurality of discrete semiconductor package devices in this embodiment are adjusted by the isolator 260 to be electrical signals suitable for long-distance transmission determined according to actual conditions, and are uniformly received by the external processor 100 and then processed to obtain temperature information of each discrete semiconductor package device.
It should be noted that each discrete semiconductor device in fig. 5 only shows the thermistor 230, and shows that the corresponding electrical signal is obtained from the thermistor 230, and is transmitted to the external processor 100 from the isolator 260 after being input into the isolator 260, and other structures in the discrete semiconductor device are omitted for clarity.
The invention also provides a power electronic device with the beneficial effects, and the power electronic device comprises the discrete semiconductor circuit. The discrete semiconductor circuit provided by the invention comprises a processor 100 and a semiconductor working unit; the semiconductor working unit comprises a discrete packaged semiconductor device 250, a gate driving power supply 210, a thermistor 230, a divider resistor 220 and an electric signal detection component 240; the voltage dividing resistor 220 and the thermistor 230 are connected in series to two ends of the gate driving power supply 210 to form a closed loop; the KELVIN pin of the discrete packaged semiconductor device 250 is connected between the thermistor 230 and the negative electrode of the gate driver 210; the electric signal detection component 240 is configured to obtain an electric temperature signal of the closed loop, and send the electric temperature signal to the processor 100; the processor 100 is configured to determine temperature information of the discrete packaged semiconductor device 250 according to the temperature electrical signal. According to the invention, the gate drive power supply 210 corresponding to the discrete packaged semiconductor device 250 is used for driving the closed loop, meanwhile, the heat energy of the semiconductor packaged device is directly guided to the thermistor 230 by using the KELVIN pin, so that the difference between the temperature of the thermistor 230 and the temperature of the discrete packaged semiconductor is further reduced, at the moment, the resistance value change of the thermistor 230 can be known by acquiring the electric signal of the closed loop, and further, the high-precision temperature information of the discrete packaged semiconductor device 250 is obtained, the temperature measurement of the single discrete packaged semiconductor device 250 is realized, and the measurement precision is greatly improved.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The discrete semiconductor circuit and the power electronic device provided by the present invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A discrete semiconductor circuit comprises a processor and a semiconductor working unit;
the semiconductor working unit comprises a discrete packaged semiconductor device, a gate driving power supply, a thermistor, a divider resistor and an electric signal detection assembly;
the divider resistor and the thermistor are connected in series to two ends of the gate pole driving power supply to form a closed loop;
the KELVIN pin of the discrete packaged semiconductor device is connected between the thermistor and the cathode of the gate drive power supply;
the electric signal detection assembly is used for acquiring the temperature electric signal of the closed loop and sending the temperature electric signal to the processor;
the processor is used for determining the temperature information of the discrete packaged semiconductor device according to the temperature electric signal.
2. The discrete semiconductor circuit according to claim 1, wherein the electrical signal detection component is a voltage detection component;
the voltage component is connected to two ends of the thermistor and used for detecting the voltage value of the thermistor.
3. The discrete semiconductor circuit of claim 1, wherein the voltage divider resistor and the thermistor are connected in series across the gate drive power supply to form a closed loop comprising:
the positive pole of gate pole drive power supply is connected with the first end of divider resistor, the second end of divider resistor is connected with the first end of thermistor, the second end of thermistor is connected with the negative pole of gate pole drive power supply.
4. The discrete semiconductor circuit according to claim 1, wherein when the discrete packaged semiconductor device is a MOSFET, the KELVIN pin is connected to a source region of the MOSFET;
when the discrete packaged semiconductor device is the IGBT or the triode, the KELVIN pin is connected with an emitter region of the IGBT or the triode.
5. The discrete semiconductor circuit of claim 1, wherein the KELVIN pins are directly connected to corresponding regions in the discrete packaged semiconductor device by bonding wires.
6. The discrete semiconductor circuit according to claim 1, wherein the voltage-dividing resistor is a high-precision resistor.
7. The discrete semiconductor circuit of claim 1, wherein the discrete packaged semiconductor device is a TO247 package.
8. The discrete semiconductor circuit according to claim 1, wherein the processor is a gate drive chip corresponding to the gate drive power supply.
9. The discrete semiconductor circuit according to any one of claims 1 to 7, wherein the discrete semiconductor circuit comprises a plurality of semiconductor working units; the semiconductor working unit further comprises an isolator;
the processor respectively obtains the temperature information of the discrete packaged semiconductor devices corresponding to the semiconductor working units through the plurality of isolators.
10. A power electronic device characterized in that it comprises a discrete semiconductor circuit according to any of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011435474.0A CN112504502A (en) | 2020-12-10 | 2020-12-10 | Discrete semiconductor circuit and power electronic device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011435474.0A CN112504502A (en) | 2020-12-10 | 2020-12-10 | Discrete semiconductor circuit and power electronic device |
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| CN112504502A true CN112504502A (en) | 2021-03-16 |
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| CN202011435474.0A Pending CN112504502A (en) | 2020-12-10 | 2020-12-10 | Discrete semiconductor circuit and power electronic device |
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