CN112504302A - Magnetic adsorption transfer gallium nitride-based flexible differential type non-grid biosensor - Google Patents
Magnetic adsorption transfer gallium nitride-based flexible differential type non-grid biosensor Download PDFInfo
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- G—PHYSICS
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- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
The invention discloses a magnetic adsorption transfer gallium nitride-based flexible differential non-grid biosensor, which relates to the field of biosensors and comprises a GaN HEMT device Q1, a GaN HEMT device Q2 (a gallium nitride high electron mobility transistor) and a peripheral functional circuit, wherein the sensor adopts the third generation gallium nitride-based wide bandgap semiconductor technology, the differential technology, the magnetic adsorption transfer technology and the flexible technology for processing, so that the sensor can be worn. The gallium nitride non-grid device has natural high-concentration two-dimensional electron gas (2 DEG) and strong polarization effect, and is high in sensing sensitivity and responsivity. The sensing precision of the device is greatly improved by using a differential technology, so that the device is hardly influenced by the environment. The device is firmly combined with the flexible substrate by a magnetic adsorption transfer technology. The flexible technology extends the application of the gallium nitride device in flexible occasions, and the gallium nitride device can be universally used for various sensors of temperature, glucose, sweat, ultraviolet, strain and the like by adopting different biological sensitive identification substances.
Description
Technical Field
The invention relates to the field of biosensors, in particular to a magnetic adsorption transfer gallium nitride-based flexible differential type gridless biosensor.
Background
A biosensor is a sensor that is sensitive to a biological substance and converts its concentration into an electrical signal for detection. Biosensors generally comprise three main functional components, a biologically sensitive recognition substance, a physicochemical transducer and a signal amplifier. Wherein, the biological sensitive identification substance comprises enzyme, antibody, antigen, microorganism, cell, tissue, nucleic acid, etc. The physical and chemical transducer comprises an oxygen electrode, a photosensitive tube, a field effect tube, a piezoelectric crystal and the like. The signal amplifier comprises an operational amplifier or a buffer and the like.
Most commonly, in the conventional biosensor, the physical and chemical transducers are made of semiconductor materials, and the devices are generally made into resistive devices and field effect transistor devices. The resistive device has simple structure and process, is easy to manufacture, but has no amplification function, and has relatively low detection sensitivity. The field effect transistor device structure has the advantages that the grid control effect is added, the structure and the process become more complex, the cost is high, the amplification function is achieved, the detection sensitivity is high, and the response is faster. With the development of the technology, the field effect transistor biosensor is developed into two structures, namely, a gated structure and a non-gated structure. The gridless structure combines the dual advantages of resistive devices and field effect transistor devices and is highly appreciated.
Both the conventional biosensor and the newly developed GaN HEMT grid-less biosensor have a fatal defect that the biosensor is greatly influenced by the environment, and the environmental factors comprise the environmental temperature, the environmental illumination intensity, the magnitude of applied bias voltage, the magnitude of on-current and the like.
On the other hand, the NiZnCu ferrite belongs to a branch of NiZn ferrite, not only has higher magnetic conductivity and low high-frequency loss, but also has very high resistivity and low sintering temperature, has no problem of ion valence change in the sintering process, can be directly sintered in the air, and has relatively simple manufacturing process, thereby having the most potential application in chip inductor devices. The magnetic property of the ferrite can be utilized to expand the application of the ferrite to other purposes, such as enhancing the adsorption strength between the device and the flexible substrate.
Disclosure of Invention
The invention aims to provide a magnetic adsorption transfer gallium nitride-based flexible differential type non-grid biosensor, which adopts the third generation gallium nitride-based wide bandgap semiconductor technology, the differential technology, the magnetic adsorption transfer technology and the flexible technology for processing and is wearable. The adopted gallium nitride non-grid device has natural high-concentration two-dimensional electron gas and strong polarization effect, and has high sensing sensitivity and high responsiveness. The sensing precision of the device is greatly improved by using a differential technology, so that the device is hardly influenced by the environment. The magnetic adsorption transfer technology enables the device to be firmly combined with the flexible substrate. The flexible technology extends the application of the gallium nitride device in flexible occasions, and the gallium nitride device can be universally used for various sensors of temperature, glucose, sweat, ultraviolet, strain and the like by adopting different biological sensitive identification substances.
A magnetically-adsorbed-transferred gallium nitride-based flexible differential-type gridless biosensor is characterized by comprising a GaN HEMT device Q1, a GaN HEMT device Q2 and a peripheral functional circuit, wherein the GaN HEMT device Q1 and the GaN HEMT device Q2 work in a linear state, the drains of the GaN HEMT device Q2 are connected, the grids of the GaN HEMT device Q1 and the GaN HEMT device Q2 respectively correspond to a signal input 1 and a signal input 2, the sources of the GaN HEMT device Q1 and the GaN HEMT device Q2 are respectively connected to one sides of a current detector S1 and a current detector S2 in the functional circuit, the other sides of the current detector S1 and the current detector S2 are connected to the ground, and the current detector S1 and the current detector S2 are also respectively connected to the positive terminal and the negative terminal of an operational amplifier IC 1;
the GaN HEMT device Q1 and the GaN HEMT device Q2 are differential type non-grid high electron mobility transistor devices prepared by adopting a third generation wide bandgap semiconductor gallium nitride material, after a substrate of the primarily manufactured differential type non-grid GaN HEMT device is stripped, the GaN HEMT device is subjected to flexible treatment through a flexible snake-shaped interconnection process, and then the GaN HEMT device can be firmly combined with the flexible substrate through a magnetic adsorption transfer process.
Preferably, the single biosensor is made into an area detector through flexible array of devices.
Preferably, the magnetic adsorption transfer process is to fill the PDMS in the nano-pits by surface treatment of the GaN HEMT device through the adhesion of the PDMS, so that the GaN HEMT device can be firmly combined with the flexible substrate.
Preferably, the flexible substrate of the GaN HEMT device can be a PDMS material.
Preferably, the substrate of the preliminarily manufactured differential type non-grid GaN HEMT device is sapphire or silicon, the substrate is provided with a buffer and sacrificial layer which comprises a 1-3nmAl layer or a graphical GaN layer, the buffer and sacrificial layer is provided with a GaN buffer layer, the GaN buffer layer is provided with an intrinsic GaN layer, the intrinsic GaN layer is provided with an AlGaN barrier layer and AlXGaN1-XOn the barrier layer is a p-type GaN cap layer.
Preferably, the Al isXGaN1-XIn the barrier layer, X is AlXGaN1-XThe component of middle GaN is 0.15-0.38.
Preferably, the GaN HEMT device Q1, the GaN HEMT device Q2, the current detector S1, the current detector S2 and the operational amplifier IC1 are integrated on a PCB board and placed in a biosensor case.
The invention has the advantages that:
1. the differential type non-grid High Electron Mobility Transistor (HEMT) device is prepared by adopting a third-generation wide bandgap semiconductor gallium nitride (GaN) material, has natural high-concentration two-dimensional electron gas and strong polarization effect, and is high in sensing sensitivity and responsivity.
2. The difference technology is used, compared with a single device, the structure of the device is equivalent to that 2 identical GaN HEMT devices which are connected in parallel are adopted, wherein 1 GaN HEMT device is used for detecting environment variables and measured variables, the other 1 GaN HEMT device only detects the environment variables (including temperature, illumination, device bottom noise and the like), then the difference value of the 2 GaN HEMT devices is extracted and amplified through a differential amplifier, namely an amplified signal of the pure measured variable is obtained, and the measurement accuracy can be obviously improved.
3. Can descend its thickness through peeling off the back with the substrate, the rethread flexible technology is handled, accomplishes the flexibility to gaN HEMT device, and rethread magnetic adsorption transfer technique handles the gaN surface of device, with the help of the viscidity of PDMS, fills PDMS in the nanometer hole, makes gaN HEMT device firmly combine together with flexible substrate.
4. The GaN HEMT device and the current detection and differential amplification circuit are designed in an integrated mode, so that the size of a single biosensor is effectively reduced, and the array design is facilitated.
5. The array design can expand the single-point detection of the biosensor to the area detection, and effectively improves the detection function of the device.
Drawings
FIG. 1 is a schematic diagram of the circuit of the present invention;
FIG. 2 is a schematic structural diagram of a conventional gridless GaN HEMT device;
FIG. 3 is a schematic structural diagram of a differential gridless GaN HEMT device in accordance with the present invention;
FIG. 4 is a flow chart of a process for manufacturing a differential non-gate GaN HEMT device;
FIG. 5 is a diagram of a magnetic adsorption transfer process;
FIG. 6 is a process diagram of a flexible serpentine interconnect fabrication process;
FIG. 7 is a process for flexible array fabrication of devices;
FIG. 8 is a schematic structural view of a face detector;
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
As shown in fig. 1 to 7, a magnetically-adsorbed-transfer gallium nitride-based flexible differential-type gridless biosensor comprises a GaN HEMT device Q1, a GaN HEMT device Q2 and a peripheral functional circuit, wherein the GaN HEMT device Q1 and the GaN HEMT device Q2 work in a linear state, the drains of the GaN HEMT device Q1 and the gate of the GaN HEMT device Q2 respectively correspond to a signal input 1 and a signal input 2, the sources of the GaN HEMT device Q1 and the GaN HEMT device Q2 are respectively connected to one side of a current detector S1 and one side of a current detector S2 in the functional circuit, the current detector S1 and the other side of the current detector S2 are connected to the ground, and the current detector S1 and the current detector S2 are respectively connected to the positive terminal and the negative terminal of an operational amplifier IC 1; the difference technology is used, compared with a single device, the structure of the device is equivalent to that 2 identical GaN HEMT devices which are connected in parallel are adopted, wherein 1 GaN HEMT device is used for detecting environment variables and measured variables, the other 1 GaN HEMT device only detects the environment variables (including temperature, illumination, device bottom noise and the like), then the difference value of the 2 GaN HEMT devices is extracted and amplified through a differential amplifier, namely an amplified signal of the pure measured variable is obtained, and the measurement accuracy can be obviously improved.
The GaN HEMT device Q1 and the GaN HEMT device Q2 are differential type non-grid high electron mobility transistor devices prepared by adopting a third generation wide bandgap semiconductor gallium nitride material, after a substrate of the primarily manufactured differential type non-grid GaN HEMT device is stripped, the GaN HEMT device is subjected to flexible treatment through a flexible snake-shaped interconnection process, and then the GaN HEMT device can be firmly combined with the flexible substrate through a magnetic adsorption transfer process. The differential type non-grid High Electron Mobility Transistor (HEMT) device is prepared by adopting a third-generation wide bandgap semiconductor gallium nitride (GaN) material, has natural high-concentration two-dimensional electron gas and strong polarization effect, and is high in sensing sensitivity and responsivity.
And then the single biosensor is flexibly arrayed through the device to form an area detector. The array design can expand the single-point detection of the biosensor to the area detection, and effectively improves the detection function of the device.
The magnetic adsorption transfer process is characterized in that the surface of the GaN HEMT device is treated, and PDMS is filled in the nano pits by virtue of the viscosity of the PDMS, so that the GaN HEMT device can be firmly combined with the flexible substrate. Can descend its thickness through peeling off the back with the substrate, the rethread flexible technology is handled, accomplishes the flexibility to gaN HEMT device, and rethread magnetic adsorption transfer technique handles the gaN surface of device, with the help of the viscidity of PDMS, fills PDMS in the nanometer hole, makes gaN HEMT device firmly combine together with flexible substrate.
The flexible substrate of the GaN HEMT device can be a PDMS material.
The substrate of the preliminarily manufactured differential type non-grid GaN HEMT device is sapphire or silicon, a buffering and sacrificial layer is arranged on the substrate and comprises a 1-3nmAl layer or a graphical GaN layer, a GaN buffering layer is arranged on the buffering and sacrificial layer, an intrinsic GaN layer is arranged on the GaN buffering layer, an AlGaN barrier layer and an Al barrier layer are arranged on the intrinsic GaN layerXGaN1-XA p-type GaN cap layer is arranged on the barrier layer。
The Al isXGaN1-XIn the barrier layer, X is AlXGaN1-XThe component of middle GaN is 0.15-0.38.
The GaN HEMT device Q1, the GaN HEMT device Q2, the current detector S1, the current detector S2 and the operational amplifier IC1 are integrated on a PCB and are arranged in the shell of the biosensor.
The specific implementation mode and principle are as follows:
the device structure is shown in fig. 3. The substrate is sapphire or silicon. On the substrate are buffer and sacrificial layers comprising 1-3nmal n layers or patterned GaN layers. The buffer and sacrificial layer is a GaN buffer layer with a thickness of 200nm-1.5 um. The GaN buffer layer is an intrinsic GaN layer with a thickness of 100nm-500 nm. Al on the intrinsic GaN layerXGaN1-XBarrier layer, x is AlXGaN1-XThe component of middle GaN is 0.15-0.38, and the thickness is 10-30 nm. Al (Al)XGaN1-XThe barrier layer is provided with a p-type GaN cap layer with the thickness of 5nm-30nm and the p-type doping concentration of 1 x 1017/cm3 -*1019/cm3。
The device process is shown in fig. 4, and the process is divided into six major steps.
The first step is to clean the surface of the device. The cleaning method comprises the steps of firstly, sequentially adopting acetone, alcohol and deionized water to carry out ultrasonic treatment for 5 minutes respectively to remove partial grease; then, using liquid No. 1 APM: NH (NH)4OH:H2O2DI =1:5:30, ultrasonic treatment for 10 minutes, and removal of particles, organic matter and part of metal; then, using a liquid 2 HPM: HCl H2O2DI =1:4:20, ultrasonic treatment for 10 minutes, removal of oxides and reduction of residual amount of oxygen element; then sequentially adopting acetone, alcohol and deionized water to perform ultrasonic treatment for 5 minutes respectively, finally drying by nitrogen, and immediately baking for 5 minutes on a 110 ℃ hot table for later use.
The second step is to evaporate electrodes on the device using Physical Vapor Deposition (PVD), the electrode material can be Ti/Al/Ni/Au or Ti/Al/Ni/Al/Au.
The third step is mesa etching or ion implantation. Photoetching (the thickness of the photoresist is more than 3 mu m), and then RIE (reactive ion etching) is carried out to remove residual photoresist; then adopting ICP etching, wherein the etching time is 20 seconds, and the etching thickness is 100-300 nm; the residual gum was then removed by RIE, the surface was treated with hydrochloric acid (30% HCl: deionized water =1: 5) for 1 minute, dried with nitrogen and baked on a 110 ℃ hot plate for 5 minutes. If the boron ion implantation is adopted, mesa etching is not needed, and the surface damage of the device can be reduced.
The fourth step is isolation etching. The step is the same as the etching of the third step, and only a certain depth is etched after the third step, so that 2 devices are ensured not to generate mutual influence, and the etching thickness is 50-200 nm. The fifth step is passivation windowing to expose the active area and protect the area outside the active area of the device from passivation. Si by PECVD3N4Passivating, and passivating the thickness of the passivation to be about 30-200 nm.
The sixth step is to protect the passivation in order to protect all the area under the active area from the passivation. Si by PECVD3N4And passivating to a passivation thickness of about 100-300 nm, wherein the passivation thickness is the same as the mesa etching thickness in the third step.
The nano-patterning and transfer process is shown in figure 5 and comprises six major steps. The first step is to clean the device substrate first, and the cleaning method is the same as that in the three processes shown in the attached drawings. The second step is to vapor plate nickel (Ni) with a thickness of 50-150nm using Physical Vapor Deposition (PVD). The third step is to carry out high temperature annealing, wherein the annealing environment is pure nitrogen, the annealing temperature is 400-500 ℃, and the annealing time is 10-20 minutes. The grain size of the metallic Ni spheres formed after annealing is about 100 nm. The fourth step is that the metal Ni ball particles formed in the third step are used as a nanometer mask, and then ICP etching is adopted, the etching time is 20 seconds, and the etching thickness is 200-500 nm; the residual gum was then removed by RIE, the surface was treated with hydrochloric acid (30% HCl: deionized water =1: 5) for 1 minute, dried with nitrogen and baked on a 110 ℃ hot plate for 5 minutes. And fifthly, removing the nano Ni ball mask by adopting proportioned hydrochloric acid. The sixth step is to apply a PDMS adhesive in order to provide the device substrate with adhesion of sufficient strength. PDMS as basic component and curing agent according to 1:10 ratio completely mixed, placed in refrigerator for 2 hours and then taken out, using dropper to absorb and drop to the device, then using 500 revolutions per minute (rpm) speed spin coating for 1 minute, evenly filling on the nano patterned substrate. And sucking the PDMS by using a dropper again and dropping the PDMS on the device to ensure that the PDMS overflows out of the substrate of the device, thereby ensuring the sufficient dosage of the PDMS.
The flexible serpentine interconnection process is shown in figure 6 and is divided into six major steps. The first step is to wash the glass with alcohol and ion water, and blow-dry with nitrogen for standby. The second step is to evenly coat PDMS with the proportion of 1:10 on the glass by a glue homogenizing method under the condition of 2000rpm/30 seconds, and then bake the glass on a hot plate at the temperature of 100 ℃ for 10 minutes. The third step is to use Physical Vapor Deposition (PVD) to evaporate metal copper (Cu), the fourth step is to use photoresist to make patterns, the fifth step is to use Cu etching liquid to perform wet etching for 15 minutes, and the sixth step of preparing the patterned metal interconnection is to use Polyimide (PI) to perform passivation.
The flexible array of the device is shown in the sixth drawing, and the process is divided into three major steps.
The first step is to place the device prepared in the fourth drawing in the center of the flexible interconnection prepared in the fifth drawing, and the device is firmly adhered to the flexible substrate through the coated PDMS glue due to the nano-patterning.
And secondly, arraying the devices and bonding and interconnecting the devices.
And thirdly, passivating the device, wherein the passivation material adopts PI.
Making GaN HEMT device Q1And Q2Operating in a linear state with their drains connected. Q1And Q2Respectively, corresponding to signal input 1 and signal input 2, where signal input 1 contains the signal under test and the ambient signal, and signal input 2 contains only the ambient signal. Q1And Q2Are respectively connected with 2 current detectors (S)1And S2) The current detector may be a resistor, a hall sensor, a current transformer, a giant magnetic sensor, or the like, S1And S2The other side of the first and second electrodes are connected and grounded. S1And S2Detected current signal (I)1And I2) Respectively corresponding to the devices Q1And Q2Is proportional to signal input 1 and signal input 2, respectively. I is1And I2Respectively fed to the positive and negative terminals of an operational amplifier IC1, the output voltage V of IC1eIs proportional to I1And I2The error between the two. Thus, VeProportional to the error between signal input 1 and signal input 2, and the error between signal input 1 and signal input 2 reflects the amount of pure measured signal, the amount of ambient signal has been stripped.
Based on the above, the sensor of the invention adopts the third generation gallium nitride-based wide bandgap semiconductor technology, the differential technology, the magnetic adsorption transfer technology and the flexible technology for processing, so that the sensor can be worn. The adopted gallium nitride non-grid device has natural high-concentration two-dimensional electron gas and strong polarization effect, and has high sensing sensitivity and high responsiveness. The sensing precision of the device is greatly improved by using a differential technology, so that the device is hardly influenced by the environment. The magnetic adsorption transfer technology enables the device to be firmly combined with the flexible substrate. The flexible technology extends the application of the gallium nitride device in flexible occasions, and the gallium nitride device can be universally used for various sensors of temperature, glucose, sweat, ultraviolet, strain and the like by adopting different biological sensitive identification substances.
It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of or equivalence to the invention are intended to be embraced therein.
Claims (7)
1. A magnetically-adsorbed-transferred gallium nitride-based flexible differential-type gridless biosensor is characterized by comprising a GaN HEMT device Q1, a GaN HEMT device Q2 and a peripheral functional circuit, wherein the GaN HEMT device Q1 and the GaN HEMT device Q2 work in a linear state, the drains of the GaN HEMT device Q2 are connected, the grids of the GaN HEMT device Q1 and the GaN HEMT device Q2 respectively correspond to a signal input 1 and a signal input 2, the sources of the GaN HEMT device Q1 and the GaN HEMT device Q2 are respectively connected to one sides of a current detector S1 and a current detector S2 in the functional circuit, the other sides of the current detector S1 and the current detector S2 are connected to the ground, and the current detector S1 and the current detector S2 are also respectively connected to the positive terminal and the negative terminal of an operational amplifier IC 1;
the GaN HEMT device Q1 and the GaN HEMT device Q2 are differential type non-grid high electron mobility transistor devices prepared by adopting a third generation wide bandgap semiconductor gallium nitride material, after a substrate of the primarily manufactured differential type non-grid GaN HEMT device is stripped, the GaN HEMT device is subjected to flexible treatment through a flexible snake-shaped interconnection process, and then the GaN HEMT device can be firmly combined with the flexible substrate through a magnetic adsorption transfer process.
2. The magnetically adsorbed transferred gallium nitride-based flexible differential non-gate biosensor as claimed in claim 1, wherein: and then the single biosensor is flexibly arrayed through the device to form an area detector.
3. The magnetically adsorbed transferred gallium nitride-based flexible differential non-gate biosensor as claimed in claim 1, wherein: the magnetic adsorption transfer process is characterized in that the surface of the GaN HEMT device is treated, and PDMS is filled in the nano pits by virtue of the viscosity of the PDMS, so that the GaN HEMT device can be firmly combined with the flexible substrate.
4. The magnetically adsorbed transferred gallium nitride-based flexible differential non-gate biosensor as claimed in claim 1, wherein: the flexible substrate of the GaN HEMT device can be a PDMS material.
5. The magnetically adsorbed transferred gallium nitride-based flexible differential non-gate biosensor as claimed in claim 1, wherein: the substrate of the preliminarily manufactured differential type non-grid GaN HEMT device is sapphire or silicon, a buffering and sacrificial layer is arranged on the substrate and comprises a 1-3nmAl layer or a graphical GaN layer, a GaN buffering layer is arranged on the buffering and sacrificial layer, an intrinsic GaN layer is arranged on the GaN buffering layer, an AlGaN barrier layer and an Al barrier layer are arranged on the intrinsic GaN layerXGaN1-XOn the barrier layer is a p-type GaN cap layer.
6. The magnetically adsorbed transferred gallium nitride-based flexible differential non-gate biosensor as claimed in claim 5, wherein: the Al isXGaN1-XIn the barrier layer, X is AlXGaN1-XThe component of middle GaN is 0.15-0.38.
7. The magnetically adsorbed transferred gallium nitride-based flexible differential non-gate biosensor as claimed in claim 1, wherein: the GaN HEMT device Q1, the GaN HEMT device Q2, the current detector S1, the current detector S2 and the operational amplifier IC1 are integrated on a PCB and are arranged in the shell of the biosensor.
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