CN112499582A - Preparation method of tunable FP optical filter based on thin film bonding - Google Patents
Preparation method of tunable FP optical filter based on thin film bonding Download PDFInfo
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- CN112499582A CN112499582A CN202011341605.9A CN202011341605A CN112499582A CN 112499582 A CN112499582 A CN 112499582A CN 202011341605 A CN202011341605 A CN 202011341605A CN 112499582 A CN112499582 A CN 112499582A
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- thin film
- lithium niobate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
Abstract
The invention belongs to the technical field of thin film spectral filter preparation processes, and particularly relates to a preparation method of a tunable FP optical filter based on thin film bonding, which comprises the following steps: manufacturing a lower metal reflecting layer: preparing a metal reflecting layer below the FP filter by a substrate by adopting a thermal evaporation or ion beam sputtering coating method; preparing a lithium niobate thin film light-transmitting layer: the preparation method comprises the following steps of preparing by adopting an ion implantation and bonding stripping method; preparing an upper metal reflecting layer: preparing by adopting a magnetron sputtering method; fourthly, the upper metal reflecting electrode is prepared in a graphical mode: and (3) manufacturing an upper metal electrode structure by adopting photoetching and ion beam etching processes to finish the manufacturing of the tunable FP optical filter. The method of the invention overcomes the problem that the center wavelength of the existing optical filter is difficult to tune, has simple manufacturing process and easy regulation and control, and can realize the linear and tile type multi-spectral-band optical filter.
Description
Technical Field
The invention belongs to the technical field of thin film spectral filter preparation processes, and particularly relates to a preparation method of a tunable FP optical filter based on thin film bonding.
Background
The filter is made by adding special fuel into plastic or glass substrate or evaporating optical film on its surface, and is used to attenuate some light wave band in light wave or to precisely select small wave band to pass through, and reflect other wave band which is not desired to pass through. By changing the structure of the optical filter and the optical parameters of the film layer, various spectral characteristics can be obtained, so that the optical filter can control, adjust and change the transmission, reflection, polarization or phase state of light waves, and the optical filter is widely applied to spectral cameras.
In order to realize the detection of various spectrums, the traditional multiband imaging device needs to use different optical filters and then realizes the filtering of multiband by the control of a rotating wheel, thereby causing larger volume and inconvenient use; on the other hand, in order to realize multiband focusing and reduce aberration, multiband imaging also needs a large and complex optical component for continuously reducing aberration, and the traditional multiband imaging device has a large volume and a complex imaging system and is inconvenient to use.
The tunable optical filter is generally an optical filter with adjustable central wavelength of an optical band-pass filter, can be used for a multiband imaging system due to the flexibility of wavelength adjustment, effectively simplifies a multiband imaging device, and has wide application in the field of multispectral imaging. At present, the dimmable filter is mainly based on a MEMs FP structure, the technical requirements on the MEMs processing technology are very high, the technology is complex and difficult, the yield is low, and the application of the dimmable filter is limited.
Disclosure of Invention
Technical problem to be solved
The technical problem to be solved by the invention is as follows: aiming at the defects or improvement requirements of the prior art, how to provide a tunable FP optical filter preparation process method based on film transfer bonding can effectively solve the problems of large process difficulty, low yield and the like of the existing MEMS type thermo-optical tuned filter, and has good application prospect in the field of spectral imaging.
(II) technical scheme
In order to solve the technical problem, the invention provides a preparation method of a tunable FP optical filter based on thin film bonding, which comprises the following steps:
step 1: manufacturing a lower metal reflecting layer;
preparing a lower metal reflecting layer of the FP filter on the substrate by adopting a thermal evaporation coating method;
step 2: preparing a lithium niobate thin film light-transmitting layer:
preparing a lithium niobate thin film light-transmitting layer by adopting an ion implantation and bonding stripping method;
and step 3: preparing an upper metal reflecting layer:
preparing an upper metal reflecting layer by adopting a magnetron sputtering method;
and 4, step 4: patterning preparation of the upper metal reflecting electrode:
manufacturing an upper metal electrode structure by adopting photoetching and ion beam etching processes to finish the manufacturing of the tunable FP optical filter;
and 5: graphical preparation of the lithium niobate thin film:
and etching to remove the lithium niobate thin film uncovered with the metal area by adopting an ion beam etching process to finish the manufacture of the tunable FP filter.
Wherein the substrate is quartz glass.
Wherein the substrate is K9 glass.
Wherein, the lower metal reflecting layer material comprises Al and Ag.
Wherein the step 2 is as follows: firstly, H ion implantation is carried out on the upper surface of a lithium niobate substrate, wafer-level bonding is carried out on the implanted surface of the lithium niobate and one surface of a lower metal reflecting layer in the substrate, the lithium niobate substrate is removed by adopting a thermal stripping method, and a substrate with a bonding structure of a lithium niobate thin film and the lower metal reflecting layer is left.
Wherein, in the step 2, the tangential direction, the thickness and the thickness of the lithium niobate thin film can be freely selected.
Wherein the step 3 is as follows: and sputtering the upper metal reflecting layer on the substrate with the lithium niobate film and the lower metal reflecting layer by adopting a magnetron sputtering method.
Wherein, the upper metal reflecting electrode is patterned into a linear array type, a tile type or a mosaic type.
Wherein, the upper metal reflecting layer material comprises Al and Ag.
In the step 5, the lithium niobate thin film not covered by the metal region is etched and removed by adopting a dry etching process including RIE and ICP.
(III) advantageous effects
Compared with the prior art, the invention can obtain the following beneficial effects:
the lithium niobate film adopted by the invention is used as a cavity material of a half-wave resonant cavity in the optical interference film, has a wider light-transmitting window (340-;
the invention can freely select the tangential direction and the thickness of the lithium niobate film based on the film transfer bonding method, and is beneficial to fully utilizing the photoelectric effect of the lithium niobate material;
the invention can effectively solve the problems of very high technical requirements of processing technology, complex and difficult process, low yield and the like of the existing MEMS thermo-optic tuned filter, and has good application prospect in the field of optical sensing.
Drawings
FIG. 1 is a schematic diagram of a process flow for manufacturing a tunable FP filter by thin film transfer bonding according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a line-column cross-sectional structure of a tunable FP filter based on a lithium niobate thin film according to an embodiment of the present invention;
fig. 3 is a schematic view of a tile structure of a tunable FP filter based on a lithium niobate thin film according to an embodiment of the present invention.
Detailed Description
In order to make the objects, contents, and advantages of the present invention clearer, the following detailed description of the embodiments of the present invention will be made in conjunction with the accompanying drawings and examples.
In order to solve the problems in the prior art, the invention provides a method for preparing a tunable FP optical filter based on thin film bonding, which comprises the following steps as shown in figure 1:
step 1: manufacturing a lower metal reflecting layer;
preparing a lower metal reflecting layer of the FP filter on the substrate by adopting a thermal evaporation coating method;
step 2: preparing a lithium niobate thin film light-transmitting layer:
preparing a lithium niobate thin film light-transmitting layer by adopting an ion implantation and bonding stripping method;
and step 3: preparing an upper metal reflecting layer:
preparing an upper metal reflecting layer by adopting a magnetron sputtering method;
and 4, step 4: patterning preparation of the upper metal reflecting electrode:
manufacturing an upper metal electrode structure by adopting photoetching and ion beam etching processes to finish the manufacturing of the tunable FP optical filter;
and 5: graphical preparation of the lithium niobate thin film:
and etching to remove the lithium niobate thin film uncovered with the metal area by adopting an ion beam etching process to finish the manufacture of the tunable FP filter.
Wherein the substrate is quartz glass.
Wherein the substrate is K9 glass.
Wherein, the lower metal reflecting layer material comprises Al and Ag.
Wherein the step 2 is as follows: firstly, H ion implantation is carried out on the upper surface of a lithium niobate substrate, wafer-level bonding is carried out on the implanted surface of the lithium niobate and one surface of a lower metal reflecting layer in the substrate, the lithium niobate substrate is removed by adopting a thermal stripping method, and a substrate with a bonding structure of a lithium niobate thin film and the lower metal reflecting layer is left.
Wherein, in the step 2, the tangential direction, the thickness and the thickness of the lithium niobate thin film can be freely selected.
Wherein the step 3 is as follows: and sputtering the upper metal reflecting layer on the substrate with the lithium niobate film and the lower metal reflecting layer by adopting a magnetron sputtering method.
Wherein, the upper metal reflecting electrode is patterned into a linear array type, a tile type or a mosaic type.
Wherein, the upper metal reflecting layer material comprises Al and Ag.
In the step 5, the lithium niobate thin film not covered by the metal region is etched and removed by adopting a dry etching process including RIE and ICP.
Example 1
As shown in fig. 1, this embodiment provides a method for manufacturing a tunable FP filter based on thin film transfer bonding, which includes the following steps:
manufacturing a lower metal reflecting layer 2: quartz glass, K9 glass or other highly transparent glass materials are preferably selected as the substrate 1; then evaporating a lower metal reflecting layer of the FP filter on the substrate by adopting a thermal evaporation coating method, wherein the lower metal layer is made of Al, Ag and the like, and the reflectivity is required to be better than 90%;
preparing a lithium niobate thin film light-transmitting layer 3: firstly, H ion injection is carried out on the upper surface 301 of a lithium niobate substrate, wafer-level bonding is carried out on the injection surface of the lithium niobate and one surface of a lower metal reflecting layer 2 in a substrate 1, the lithium niobate substrate 301 is removed by adopting a thermal stripping method, and the substrate with a bonding structure of a lithium niobate thin film 3 and the lower metal reflecting layer 2 is left, so that a lithium niobate thin film light-transmitting layer 3 is obtained;
preparing an upper metal reflecting layer 4: sputtering an upper metal reflecting layer on the substrate with the lithium niobate thin film light-transmitting layer 3 and the lower metal reflecting layer 2, wherein metals such as Al, Ag and the like can be prepared by adopting a magnetron sputtering method, and the reflectivity of the upper metal reflecting layer is required to be better than 90%;
fourthly, the upper metal reflecting electrode is prepared in a graphical mode: the upper metal patterned electrode structure 401 is manufactured by adopting conventional photoetching and etching process means, and can be in a linear array type, a tile type and a mosaic type;
preparing a lithium niobate film in a graphical manner: and etching and removing the lithium niobate thin film in the uncovered metal area by adopting dry etching processes such as RIE (reactive ion etching), ICP (inductively coupled plasma) and the like to complete the manufacture of the line-array and tile filter.
As shown in fig. 2, when the upper metal reflective electrode structure is a linear periodic structure 402, the lithium niobate thin film thereunder is a two-dimensional linear periodic structure 302. As shown in fig. 3, when the upper metal reflective electrode structure is a tile-shaped periodic structure 403, the lower lithium niobate thin film light-transmitting layer 3 is a tile-shaped three-dimensional periodic structure.
Preferably, the tangential direction of the lithium niobate thin film in the step (II) can be freely selected.
According to the preparation method of the tunable FP optical filter based on the thin film transfer bonding, the FP tunable optical filter film stack based on the lithium niobate thin film as the cavity material of the half-wave resonant cavity in the optical interference thin film is formed, the tangential direction and the thickness of the lithium niobate thin film can be freely selected, and the photoelectric effect of the lithium niobate material can be fully utilized; the optical loss of the narrow-band tunable filter can be greatly reduced, the tunable center wavelength is realized, and the problems of high technical requirement of the processing technology, complex technology, high difficulty, low yield and the like of the traditional MEMS thermo-optical tunable filter are effectively solved.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A preparation method of a tunable FP optical filter based on thin film bonding is characterized by comprising the following steps:
step 1: manufacturing a lower metal reflecting layer;
preparing a lower metal reflecting layer of the FP filter on the substrate by adopting a thermal evaporation coating method;
step 2: preparing a lithium niobate thin film light-transmitting layer:
preparing a lithium niobate thin film light-transmitting layer by adopting an ion implantation and bonding stripping method;
and step 3: preparing an upper metal reflecting layer:
preparing an upper metal reflecting layer by adopting a magnetron sputtering method;
and 4, step 4: patterning preparation of the upper metal reflecting electrode:
manufacturing an upper metal electrode structure by adopting photoetching and ion beam etching processes to finish the manufacturing of the tunable FP optical filter;
and 5: graphical preparation of the lithium niobate thin film:
and etching to remove the lithium niobate thin film uncovered with the metal area by adopting an ion beam etching process to finish the manufacture of the tunable FP filter.
2. The method of claim 1, wherein the substrate is quartz glass.
3. The method of manufacturing the tunable FP filter based on thin film bonding according to claim 1, wherein the substrate is K9 glass.
4. The method of claim 1, wherein the lower metal reflective layer comprises Al or Ag.
5. The method for manufacturing the tunable FP filter based on thin film bonding according to claim 1, wherein the step 2 is as follows: firstly, H ion implantation is carried out on the upper surface of a lithium niobate substrate, wafer-level bonding is carried out on the implanted surface of the lithium niobate and one surface of a lower metal reflecting layer in the substrate, the lithium niobate substrate is removed by adopting a thermal stripping method, and a substrate with a bonding structure of a lithium niobate thin film and the lower metal reflecting layer is left.
6. The method for manufacturing the tunable FP filter based on thin film bonding of claim 5, wherein in the step 2, the tangential direction, the thickness and the thickness of the lithium niobate thin film can be freely selected.
7. The method for manufacturing the tunable FP filter based on thin film bonding according to claim 5, wherein the step 3 is as follows: and sputtering the upper metal reflecting layer on the substrate with the lithium niobate film and the lower metal reflecting layer by adopting a magnetron sputtering method.
8. The method of claim 1, wherein the upper metal reflective electrode is patterned into a linear, tile or mosaic pattern.
9. The method of claim 1, wherein the upper metal reflective layer comprises Al or Ag.
10. The method for manufacturing the tunable FP filter based on thin film bonding as claimed in claim 1, wherein in the step 5, the lithium niobate thin film not covered by the metal region is removed by etching by using a dry etching process including RIE and ICP.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4269481A (en) * | 1979-07-06 | 1981-05-26 | Rockwell International Corporation | Multiple-cavity electro-optic tunable filter |
| US4508964A (en) * | 1982-09-29 | 1985-04-02 | Rockwell International Corporation | Electro-optically tuned rejection filter |
| US6031653A (en) * | 1997-08-28 | 2000-02-29 | California Institute Of Technology | Low-cost thin-metal-film interference filters |
| US20020009251A1 (en) * | 2000-03-31 | 2002-01-24 | Byrne Dale M. | Electro-optically tunable filter |
| US20090059343A1 (en) * | 2007-08-29 | 2009-03-05 | Nova Photonics | Electro-Optical Tunable Birefringent Filter |
| CN104868050A (en) * | 2014-06-09 | 2015-08-26 | 济南晶正电子科技有限公司 | Method of manufacturing thin film on substrate with different thermal expansion coefficient from original substrate |
| CN105629523A (en) * | 2016-04-07 | 2016-06-01 | 山东大学 | Lithium niobate based tunable optical filter and application thereof |
| CN110224680A (en) * | 2019-05-13 | 2019-09-10 | 电子科技大学 | A kind of solid-state reflection-type bulk acoustic wave resonator and preparation method thereof |
-
2020
- 2020-11-25 CN CN202011341605.9A patent/CN112499582A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4269481A (en) * | 1979-07-06 | 1981-05-26 | Rockwell International Corporation | Multiple-cavity electro-optic tunable filter |
| US4508964A (en) * | 1982-09-29 | 1985-04-02 | Rockwell International Corporation | Electro-optically tuned rejection filter |
| US6031653A (en) * | 1997-08-28 | 2000-02-29 | California Institute Of Technology | Low-cost thin-metal-film interference filters |
| US20020009251A1 (en) * | 2000-03-31 | 2002-01-24 | Byrne Dale M. | Electro-optically tunable filter |
| US20090059343A1 (en) * | 2007-08-29 | 2009-03-05 | Nova Photonics | Electro-Optical Tunable Birefringent Filter |
| CN104868050A (en) * | 2014-06-09 | 2015-08-26 | 济南晶正电子科技有限公司 | Method of manufacturing thin film on substrate with different thermal expansion coefficient from original substrate |
| CN105629523A (en) * | 2016-04-07 | 2016-06-01 | 山东大学 | Lithium niobate based tunable optical filter and application thereof |
| CN110224680A (en) * | 2019-05-13 | 2019-09-10 | 电子科技大学 | A kind of solid-state reflection-type bulk acoustic wave resonator and preparation method thereof |
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