CN112490346A - Method for improving activation uniformity of pyroelectric wafer plasma - Google Patents
Method for improving activation uniformity of pyroelectric wafer plasma Download PDFInfo
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- 230000004913 activation Effects 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000001994 activation Methods 0.000 claims abstract description 91
- 230000003213 activating effect Effects 0.000 claims abstract description 59
- 238000000678 plasma activation Methods 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims description 34
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- 239000007789 gas Substances 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 15
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 3
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 108
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
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- 238000005566 electron beam evaporation Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
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- 238000002513 implantation Methods 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000002269 spontaneous effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
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Abstract
The application discloses a method for improving the activation uniformity of pyroelectric wafer plasma, which comprises the following steps: activating the surface of the pyroelectric wafer by a multiple plasma activation method; the total time for activating the surface of the pyroelectric wafer is 10 seconds to 60 seconds, the time for activating the surface of the pyroelectric wafer every time is 2 seconds to 10 seconds, and the time interval for activating the surface of the pyroelectric wafer every two adjacent times is 2 seconds to 10 seconds; the power for activating the surface of the pyroelectric wafer is 25-300 watts. Activating the surface of the pyroelectric wafer by a multiple plasma activation method, and presetting activation time, time interval and activation power; therefore, the positive feedback vicious circle in the continuous activation process is interrupted, namely, a mode of multiple short-time plasma activation is adopted, the charges accumulated on the surface are released, and the uniformity of plasma activation is improved.
Description
Technical Field
The application relates to the technical field of pyroelectric wafer plasma activation, in particular to a method for improving the activation uniformity of pyroelectric wafer plasma.
Background
With the development of information technology, it is difficult for a single material to meet the development requirements of the technology, and the heterogeneous integration of different materials to exert the advantages of the different materials becomes an important direction of the technology development. Bonding is an important way for realizing heterogeneous integration of different materials, and particularly Plasma Active Bonding (Plasma Active Bonding) can realize Bonding with higher strength at room temperature and is widely applied. However, when this bonding method is applied to the bonding of materials having pyroelectric properties such as lithium niobate (having a pyroelectric coefficient of 0.4 to 0.5X 10-8 C.cm-1. K-1) and lithium tantalate (having a pyroelectric coefficient of 1.8 to 2.3X 10-8 C.cm-1. K-1), the activation is not uniform at each location on the wafer due to the pyroelectric effect, resulting in a difference in bonding strength. Meanwhile, the breakdown and deformation of the chip may be caused, which may cause the generation of bonding holes and reduce the quality and yield of the bonded wafer. The specific reasons are explained as follows: the temperature of the surface of the wafer can be increased due to the bombardment effect of the plasma on the surface of the wafer, the spontaneous polarization of the bombarded surface is reduced due to the pyroelectric effect, and residual negative charges (as shown in figure 1) can be generated on the surface of the wafer, so that positive ions in the plasma are attracted to bombard the surface; the bombardment of the surface by positive ions further raises the surface temperature, increasing the negative charge, further increasing the bombardment of the surface by positive ions, thereby creating a positive feedback process. The presence of the pyroelectric effect further increases the non-directionality and non-uniformity of the plasma, which affects each part differently due to non-uniformity and non-directionality. The roughness of the surface of the ground bombarded by positive ions is increased, and the accumulation of charges can cause dielectric breakdown of the surface of the material, thereby increasing the probability of forming bonding holes and reducing the bonding quality of the wafer.
Content of application
Aiming at the technical problem in the background technology, the application provides a method for improving the plasma activation uniformity of a pyroelectric wafer.
The application is realized by the following technical scheme:
a method for improving the plasma activation uniformity of a pyroelectric wafer comprises the following steps: activating the surface of the pyroelectric wafer by a multiple plasma activation method; the total time for activating the surface of the pyroelectric wafer is 10 seconds to 60 seconds, the time for activating the surface of the pyroelectric wafer every time is 2 seconds to 10 seconds, and the time interval for activating the surface of the pyroelectric wafer every two adjacent times is 2 seconds to 10 seconds; the power for activating the surface of the pyroelectric wafer is 25-300 watts.
Further, before the surface of the pyroelectric wafer is activated by a multiple plasma activation method, the method further comprises the following steps: and depositing a metal layer on the surface of the pyroelectric wafer.
Further, before depositing a metal layer on the surface of the pyroelectric wafer, the method further comprises the following steps: and implanting oxygen or nitrogen into the pyroelectric wafer, so that the metal layer is oxidized or nitrided.
Further, after the surface of the pyroelectric wafer is activated, the method further comprises the following steps: annealing treatment; and introducing oxygen or ammonia gas in the annealing treatment process so as to oxidize or nitridize the metal layer.
Further, the power for activating the surface of the pyroelectric wafer is 200-300 watts, so that the metal layer is removed by utilizing the etching effect of plasma.
Further, the number of times of activating the pyroelectric wafer surface is determined by the total time length of activating the pyroelectric wafer surface and the time of activating the pyroelectric wafer surface each time.
Further, the number of times of activating the surface of the pyroelectric wafer is less than or equal to 5 times.
Further, after each activation of the pair of pyroelectric wafer surfaces, the method comprises the following steps: and (3) a release process of the surface charges of the pyroelectric wafer.
Further, the method for releasing the surface charge comprises the following steps: and activating to form conductive gaseous ions, or introducing gas into a gap between every two adjacent times of activating the surface of the pyroelectric wafer, and adding a positive and negative ion generator into a gas passage.
Further, the pyroelectric wafer is a lithium niobate LiNbO3 wafer or a lithium tantalate LiTaO3 wafer.
Further, the thickness of the metal layer is less than 5 nanometers, and the metal layer is titanium Ti, aluminum Al, iron Fe or copper Cu.
By adopting the technical scheme, the method for improving the plasma activation uniformity of the pyroelectric wafer has the following beneficial effects:
activating the surface of the pyroelectric wafer by a multiple plasma activation method, presetting the time for activating the surface of the pyroelectric wafer every time, presetting the time interval for activating the surface of the pyroelectric wafer every two adjacent times, and presetting the activation power of the surface of the pyroelectric wafer; thereby interrupting the positive feedback vicious circle in the continuous activation process, namely adopting a mode of plasma activation for a plurality of times in a short time to release the charges accumulated on the surface and improve the uniformity of the plasma activation; meanwhile, a metal layer can be deposited on the activated surface of the pyroelectric wafer, so that the release and homogenization of residual charges are promoted, the plasma activation effect is further optimized, and the bonding quality is improved.
Drawings
In order to more clearly illustrate the technical solutions of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive effort.
FIG. 1 is a schematic diagram illustrating a residual negative charge generated on a wafer surface during a plasma activation process in the prior art;
FIG. 2 is a bonding flow chart according to a first embodiment of the present invention;
FIG. 3 is a bonding flow diagram of a second embodiment of the present invention;
FIG. 4 is a bonding flow diagram of a third embodiment of the present invention;
FIG. 5 is a bonding flow diagram of a fourth embodiment of the present invention;
fig. 6 is a bonding flowchart of a fifth embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. In the description of the present application, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
As shown in fig. 1, an embodiment of the present application discloses a method for improving the plasma activation uniformity of a pyroelectric wafer, including: activating the surface of the pyroelectric wafer by a multiple plasma activation method; the total time for activating the surface of the pyroelectric wafer is 10 seconds to 60 seconds, the time for activating the surface of the pyroelectric wafer every time is 2 seconds to 10 seconds, and the time interval for activating the surface of the pyroelectric wafer every two adjacent times is 2 seconds to 10 seconds; the power for activating the surface of the pyroelectric wafer is 25-300 watts. The selection of the specific activation time and the interval time depends on the pyroelectric coefficient of the pyroelectric wafer and the conductive performance of the medium.
The method includes the steps that the surface of a pyroelectric wafer is activated through a multi-time plasma activation method, the time for activating the surface of the pyroelectric wafer every time, the time interval for activating the surface of the pyroelectric wafer every two adjacent times and the activation power of the surface of the pyroelectric wafer are preset; therefore, the positive feedback vicious circle in the continuous activation process is interrupted, namely, a mode of multiple short-time plasma activation is adopted, the charges accumulated on the surface are released, the uniformity of plasma activation is improved, and the quality of subsequent bonding is improved. According to the randomness of the plasma activation, local non-uniformity deterioration points generated by each activation are different, and after multiple activations, more uniform activation effect can be obtained due to the randomness of the non-uniformity points generated by each activation.
In another embodiment of the present application, before activating the surface of the pyroelectric wafer by multiple plasma activation methods, the method further includes: and depositing a metal layer on the surface of the pyroelectric wafer. The metal layer is typically less than 5 nanometers thick and may be titanium Ti, aluminum Al, iron Fe, or copper Cu. The metal layer is deposited on the activated surface of the pyroelectric wafer, so that the release and homogenization of the surface residual charge are promoted, the plasma activation effect is further optimized, and the bonding quality is improved. In one embodiment, a metal layer may be deposited on the surface of the pyroelectric wafer by electron beam evaporation.
In another embodiment of the present application, before depositing a metal layer on the surface of the pyroelectric wafer, the method further includes: implanting oxygen or nitrogen into the pyroelectric wafer, thereby oxidizing or nitriding the metal layer; specifically, the implantation method adopts low-energy implantation, and then the metal layer is nitrided or oxidized through the diffusion effect of nitrogen and oxygen at the end of the whole process.
In another embodiment of the present application, after the activating the surface of the pyroelectric wafer, the method further includes: annealing treatment; and introducing oxygen or ammonia gas in the annealing treatment process, so that the metal layer is oxidized or nitrided to form metal oxide or nitride.
In another embodiment of the present application, the power for activating the surface of the pyroelectric wafer is 200 w to 300w, so as to remove the metal layer by etching action of high-energy plasma.
In another embodiment of the application, the process of releasing and homogenizing the surface residual charge can also be realized by adopting low power to excite plasma to form conductive gaseous substances which do not generate bombardment action on the surface, so that the surface charge is released and neutralized, and the positive and negative ion generators are added when the gas species of the interval time of the cavity is activated and the gas is filled in the interval time; specifically, conductive gaseous ions are formed through activation, or N2, O2, CO2 or H2O is filled into the cavity in a gap between every two adjacent times of activation on the surfaces of the pair of pyroelectric wafers, and a positive-negative ion generator is added into the air inlet channel to charge the filled gas.
In another embodiment of the present application, the number of times of activating the pyroelectric wafer surface is determined by the total time length of activating the pyroelectric wafer surface and the time of activating the pyroelectric wafer surface each time. In a specific embodiment, the number of times of activating the surface of the pyroelectric wafer is less than or equal to 5 times.
In another embodiment of the present application, the activating the surface of the pyroelectric wafer by multiple plasma activation methods includes: and activating the surface of the pyroelectric wafer by adopting nitrogen, argon or oxygen.
In another embodiment of the present application, each time of the activation of the surface of the pyroelectric wafer is 2 seconds to 5 seconds, and the time interval between every two adjacent times of the activation of the surface of the pyroelectric wafer is 5 seconds to 10 seconds.
In another embodiment of the application, the activated vacuum degree of the cavity is 0.001-1.0 mbar; the vacuum degree of the cavity at the activation interval is 0.5-1000 mbar; the cavity of the activation interval may include O2, N2, Ar, O2/N2 mixed gas, CO2 and water vapor; the gas-filled channel can be added with a positive/negative ion generator to charge the gas-filled channel, thereby neutralizing the surface charges of the wafer.
In another embodiment of the present application, the pyroelectric wafer is a lithium niobate LiNbO3 wafer or a lithium tantalate LiTaO3 wafer.
In another embodiment of the present application, the activating the surface of the pyroelectric wafer by multiple plasma activation methods includes: and carrying out oxidation or nitridation treatment on the metal layer. Specifically, the oxidation or nitridation of the metal layer can be realized by the action of oxygen or nitrogen during the plasma activation process, and here, it should be noted that the oxidation or nitridation treatment of the metal layer can also be realized by annealing the bonded wafer in an O2, N2 or NH3 atmosphere after bonding.
In another embodiment of the present application, after the activating the surface of the pyroelectric wafer by the multiple plasma activation method, the method further includes: activating the wafer to be bonded by a plasma activation method; and bonding the pyroelectric wafer and the wafer to be bonded, wherein in a specific embodiment, the surface temperature rise value in the whole bonding process is less than 1 ℃. So that the residual negative charge (about 1X 10-8C cm-2) generated by the activated surface does not exceed a certain value, so that there is no significant difference in the activation of the surface by the plasma.
Based on the above embodiments, a method for improving the plasma activation uniformity of a pyroelectric wafer according to the present application is described in more detail below with reference to several specific embodiments.
The first embodiment is as follows:
as shown in fig. 2, the lithium tantalate wafer and the Si wafer are bonded by plasma activation:
step s 1: activating the lithium tantalite wafer by adopting a mode of activating for a plurality of times in a short time, wherein the activation parameters are set as follows: the activation was carried out using O2 gas, the activation power was 100W, the O2 gas pressure was maintained at 0.5mbar, the single activation time was set to 5s, the time gap for each activation was set to 5s, the number of activations was 5, and the total activation time was 25 s.
Step s 2: the Si wafer is activated in a continuous activation mode: the activation parameters are set as follows: activation with O2 was carried out at an activation power of 100W and O2 gas pressure of 0.5mbar for a total activation time of 25 s.
Step s 3: and bonding the two wafers at normal temperature and normal pressure.
The second embodiment is as follows:
as shown in fig. 3, the lithium niobate wafer and the Si wafer are bonded by plasma activation:
firstly, depositing a Ti metal layer on the surface of a lithium niobate wafer in an electron beam evaporation mode, and then activating the lithium niobate wafer in a multi-time short-time activation mode, wherein the activation parameters are set as follows: with N2 activation, the activation power was 120W, the N2 gas pressure was maintained at 0.6mbar, the single activation time was set to 7.5s, the time gap for each activation was set to 5s, the number of activations was 4, and the total activation time was 30 s.
The Si wafer is activated in a continuous activation mode: the activation parameters are set as follows: activation with N2 was carried out at an activation power of 120W, with N2 gas pressure maintained at 0.6mbar and a total activation time of 30 s.
And bonding the two wafers at normal temperature and normal pressure.
And annealing the formed bonding structure in an oxygen atmosphere at 200 ℃ to oxidize the metal Ti layer at the interface to form a TiO2 layer.
The third concrete implementation mode:
as shown in fig. 4, the lithium niobate wafer and the Si wafer are bonded by plasma activation:
firstly, depositing an Al metal layer on the surface of a lithium niobate wafer in an electron beam evaporation mode, and then activating the lithium niobate wafer in a multi-time short-time activation mode, wherein the activation parameters are set as follows: with Ar activation, the activation power was 75W, the Ar gas pressure was kept at 0.6mbar, the single activation time was set to 6s, the time gap for each activation was set to 5s, the number of activations was 5, and the total activation time was 30 s.
The Si wafer is activated in a continuous activation mode: the activation parameters are set as follows: activation with Ar was carried out at an activation power of 75W, Ar gas pressure was maintained at 0.6mbar and total activation time was 30 s.
And bonding the two wafers at normal temperature and normal pressure.
The formed bonded structure was annealed in an NH3 atmosphere at 200 ℃ to nitride the metallic Al layer at the interface to form an AlN layer.
The fourth concrete implementation mode:
as shown in fig. 5, the lithium niobate wafer and the Si wafer are bonded by plasma activation:
firstly, depositing an Al metal layer on the surface of a lithium niobate wafer in an electron beam evaporation mode, and then activating the lithium niobate wafer in a multi-time short-time activation mode, wherein the activation parameters are set as follows: ar activation is adopted, but the activation power is adjusted to be 300W, so that the metal layer can be etched, the Ar gas pressure is kept to be 0.6mbar, the single activation time is set to be 10s, the time interval of each activation is set to be 5s, the activation times are 3 times, the total activation time is 30s, and when the total activation time is finished, the deposited Al metal layer can be completely etched.
The Si wafer is activated in a continuous activation mode: the activation parameters are set as follows: with Ar activation, the activation power was 100W, the Ar gas pressure was maintained at 0.6mbar, and the total activation time was 30 s.
And bonding the two wafers at normal temperature and normal pressure.
The fifth concrete implementation mode:
as shown in fig. 6, the lithium tantalate wafer and the Si wafer are bonded by plasma activation:
firstly, injecting N ions through low-energy ions to form an N-rich area on the surface of a lithium tantalate wafer, wherein the content of nitrogen atoms is more than or equal to 30%, and then depositing an Al metal layer on the surface of the lithium tantalate wafer in an electron beam evaporation mode.
Activating the lithium tantalate wafer by adopting a multi-time short-time activation mode: the activation parameters are set as follows: with Ar activation, the activation power was set to 100W, the Ar gas pressure was kept at 0.6mbar, the single activation time was set to 5s, the activation time interval was set to 3s, the number of activations was set to 5 times, and the total activation time was 25 s.
The Si wafer is activated in a continuous activation mode: the activation parameters are set as follows: activation with Ar was carried out at an activation power of 75W, Ar gas pressure was maintained at 0.6mbar and total activation time was 30 s.
And bonding the two wafers at normal temperature and normal pressure.
The N ions, which are ion-implanted by annealing, react with Al to produce an AlN layer.
While the foregoing is directed to the preferred embodiment and mode of use of the present application, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the application.
Claims (11)
1. A method for improving the plasma activation uniformity of a pyroelectric wafer is characterized by comprising the following steps:
activating the surface of the pyroelectric wafer by a multiple plasma activation method;
the total time for activating the surface of the pyroelectric wafer is 10 seconds to 60 seconds, the time for activating the surface of the pyroelectric wafer every time is 2 seconds to 10 seconds, and the time interval for activating the surface of the pyroelectric wafer every two adjacent times is 2 seconds to 10 seconds;
the power for activating the surface of the pyroelectric wafer is 25-300 watts.
2. The method for improving the plasma activation uniformity of the pyroelectric wafer as claimed in claim 1, wherein before activating the surface of the pyroelectric wafer by the multiple plasma activation method, the method further comprises: and depositing a metal layer on the surface of the pyroelectric wafer.
3. The method for improving the plasma activation uniformity of the pyroelectric wafer as claimed in claim 2, wherein before depositing a metal layer on the surface of the pyroelectric wafer, the method further comprises:
and implanting oxygen or nitrogen into the pyroelectric wafer, so that the metal layer is oxidized or nitrided.
4. The method for improving the plasma activation uniformity of the pyroelectric wafer as claimed in claim 2, wherein after the activation of the surface of the pyroelectric wafer, the method further comprises: annealing treatment;
and introducing oxygen or ammonia gas in the annealing treatment process so as to oxidize or nitridize the metal layer.
5. The method for improving the plasma activation uniformity of the pyroelectric wafer as claimed in claim 2, wherein the power for activating the surface of the pyroelectric wafer is 200 w to 300w, so as to remove the metal layer by using the etching effect of the plasma.
6. The method for improving the plasma activation uniformity of the pyroelectric wafer as claimed in claim 1, wherein the number of times of activating the pyroelectric wafer surface is determined by the total time length of activating the pyroelectric wafer surface and the time of activating the pyroelectric wafer surface each time.
7. The method for improving the plasma activation uniformity of the pyroelectric wafer as claimed in claim 6, wherein the number of times of activating the surface of the pyroelectric wafer is 5 times or less.
8. The method for improving the plasma activation uniformity of the pyroelectric wafer as claimed in claim 1, wherein after each activation of the surface of the pyroelectric wafer, the method comprises: and (3) a release process of the surface charges of the pyroelectric wafer.
9. The method for improving the plasma activation uniformity of a pyroelectric wafer as claimed in claim 8, wherein the method for releasing the surface charges comprises: and activating to form conductive gaseous ions, or introducing gas into a gap between every two adjacent times of activating the surface of the pyroelectric wafer, and adding a positive and negative ion generator into a gas passage.
10. The method for improving the plasma activation uniformity of the pyroelectric wafer as claimed in claim 1, wherein the pyroelectric wafer is a lithium niobate LiNbO3 wafer or a lithium tantalate LiTaO3 wafer.
11. The method for improving the plasma activation uniformity of a pyroelectric wafer according to claim 2, wherein the thickness of the metal layer is less than 5 nm, and the metal layer is Ti, Al, Fe or Cu.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030003684A1 (en) * | 2001-05-09 | 2003-01-02 | Silicon Genesis Corporation | Method and apparatus for multi-frequency bonding |
| CN109166793A (en) * | 2018-08-30 | 2019-01-08 | 哈尔滨工业大学 | A method of using first vacuum-ultraviolet light, two step of nitrogen plasma activates Direct Bonding lithium niobate and silicon wafer again |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030003684A1 (en) * | 2001-05-09 | 2003-01-02 | Silicon Genesis Corporation | Method and apparatus for multi-frequency bonding |
| CN109166793A (en) * | 2018-08-30 | 2019-01-08 | 哈尔滨工业大学 | A method of using first vacuum-ultraviolet light, two step of nitrogen plasma activates Direct Bonding lithium niobate and silicon wafer again |
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