CN112490123B - Complementary etching method and semiconductor etching equipment - Google Patents
Complementary etching method and semiconductor etching equipment Download PDFInfo
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Abstract
The embodiment of the application provides a complementary etching method and semiconductor etching equipment, wherein the method comprises the following steps: acquiring the current actual etching depth, and judging whether the actual etching depth reaches the target etching depth or not; if the actual etching depth does not reach the target etching depth, calculating the cycle execution times of the complementary etching and the numerical value of each process parameter in each cycle based on the actual etching depth, the target etching depth, the etching depth of the conventional etching, the cycle execution times of the conventional etching, the initial value and the final value of each process parameter of the conventional etching; and executing the complementary etching based on the calculated cycle execution times of the complementary etching and the numerical value of the technological parameter in each cycle. According to the technical scheme provided by the application, when the etching depth of conventional etching does not reach the target etching depth, the numerical value of the technological parameter required by complementary etching can be automatically calculated, and the complementary etching is performed based on the numerical value of the technological parameter required by the complementary etching so as to reach the target etching depth.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a complementary etching method and semiconductor etching equipment.
Background
Plasma deep silicon etching is an important process technology in the processing of semiconductor devices. The silicon deep microstructure obtained by deep silicon etching has a large depth-to-width ratio and high verticality.
Currently, in order to obtain a silicon microstructure with a deep depth and a vertical angle, in plasma deep silicon etching, an etching mode of applying incremental (mapping) to a part of etching parameters, i.e. gradually increasing the etching parameters with increasing etching times, is a widely used method. When etching is performed in a manner of applying incremental etching to a part of the etching parameters, it is necessary to calculate the number of times of execution of the etching operation and the etching parameters adopted for each execution of the etching operation to achieve the target etching depth. In an actual etching process, there may be a case where an etching depth formed after performing the etching operation of the calculated number of times of execution does not reach a target etching depth due to various factors affecting the etching depth. How to continue etching to reach the target etch depth becomes a problem to be solved.
Disclosure of Invention
In order to overcome the problems in the related art, the application provides a complementary etching method and semiconductor etching equipment.
According to a first aspect of an embodiment of the present application, there is provided a complementary etching method, including:
acquiring the current actual etching depth, and judging whether the actual etching depth reaches the target etching depth or not;
if the actual etching depth does not reach the target etching depth, calculating the cycle execution times of complementary etching and the numerical value of each process parameter in each cycle based on the actual etching depth, the target etching depth, the etching depth of conventional etching, the cycle execution times of conventional etching, the initial value and the final value of each process parameter of conventional etching;
And executing the complementary etching based on the calculated cycle execution times of the complementary etching and the numerical value of the technological parameter in each cycle.
According to a second aspect of an embodiment of the present application, there is provided a semiconductor etching apparatus including:
The acquisition unit is configured to acquire the current actual etching depth and judge whether the actual etching depth reaches the target etching depth or not;
The calculation unit is configured to calculate the cycle execution times of the complementary etching and the numerical value of each process parameter in each cycle based on the actual etching depth, the target etching depth, the etching depth of the conventional etching, the cycle execution times of the conventional etching, the initial value and the final value of each process parameter of the conventional etching if the actual etching depth does not reach the target etching depth;
And the complementary etching unit is configured to execute the complementary etching based on the calculated cycle execution times of the complementary etching and the numerical value of the technological parameter in each cycle.
According to the complementary etching method and the semiconductor etching equipment provided by the embodiment of the application, whether the actual etching depth reaches the target etching depth is judged by acquiring the current actual etching depth; if the actual etching depth does not reach the target etching depth, calculating the cycle execution times of the complementary etching and the numerical value of each process parameter in each cycle based on the actual etching depth, the target etching depth, the etching depth of the conventional etching, the cycle execution times of the conventional etching, the initial value and the final value of each process parameter of the conventional etching; the technical scheme of executing the complementary etching based on the calculated cycle execution times of the complementary etching and the numerical value of the technological parameter in each cycle realizes that the numerical value of the technological parameter required by the complementary etching can be automatically calculated when the etching depth does not reach the target etching depth after the conventional etching is executed, and the complementary etching is performed based on the numerical value of the technological parameter required by the complementary etching so as to reach the target etching depth.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
FIG. 1 shows a flow chart of a complementary etching method provided by an embodiment of the application;
FIG. 2 shows a schematic flow chart of a frequent etch when an increment is applied to a process parameter;
FIG. 3 is a schematic diagram showing the flow of the complementary etching when the current actual etching depth does not reach the target etching depth;
fig. 4 shows a block diagram of a semiconductor etching apparatus according to an embodiment of the present application.
Detailed Description
The application is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. It should be noted that, for convenience of description, only the portions related to the present application are shown in the drawings.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
Fig. 1 shows a flowchart of a complementary etching method according to an embodiment of the present application, where the method includes:
step 101, obtaining the current actual etching depth, and judging whether the actual etching depth reaches the target etching depth.
In the present application, the current actual etching depth may refer to: the depth to which it has been etched is currently. The current actual etch depth may be: the distance between the position reached at the time when the execution of the last cycle of execution in the conventional etching is completed and the starting position of the entire etching task.
The etching referred to in the present application may be a time-division based dry etching, also known as Bosch (Bosch) process. The dry etching based on time separation is a low-temperature plasma-based technology, and the purpose of etching is achieved by using ionized gas and a material to be etched through physical bombardment and chemical reaction.
Step 102, if the obtained actual etching depth does not reach the target etching depth, calculating the number of times of cycle execution of complementary etching and the numerical value of each process parameter in each cycle based on the actual etching depth, the target etching depth, the etching depth of conventional etching, the number of times of cycle execution of conventional etching, the initial value and the final value of each process parameter of conventional etching.
In the present application, conventional etching does not refer to a certain etching process. The process in which the current actual etch depth does not yet reach the target etch depth after completion may be referred to as conventional etch. Conventional etching and complementary etching are relatively speaking.
After the one-time complementary etching, if the current actual etching depth still does not reach the target etching depth, the one-time complementary etching can be conventional etching relative to the one-time complementary etching when the one-time complementary etching is performed again, and after the one-time complementary operation, the number of times of the one-time complementary etching is performed based on the etching depth of the conventional etching, namely the etching depth of the one-time complementary etching, the number of times of the one-time complementary etching is performed in a circulating manner, the initial value and the final value of each technological parameter of the conventional etching, namely the initial value and the final value of each technological parameter of the one-time complementary etching, and the number of times of the circulating execution of the one-time complementary etching and the numerical value of each technological parameter in each circulating time when the one-time complementary etching is performed again are calculated.
In the present application, the above-described process parameters may refer to process parameters each of which is applied to be incremented in conventional etching. In conventional etching, it may also be referred to that no incremental process parameters are applied other than the various process parameters described above, and the values of the non-incremental process parameters may remain unchanged throughout the conventional etching.
For each of the above process parameters, applying an increment to that process parameter may refer to: for each cycle performed before the last cycle performed during conventional etching, the next cycle performed this time uses a value of the process parameter that is greater than (or less than) the value of the process parameter used for the cycle performed this time.
For each of the process parameters, the initial value of the conventional etch process parameter may refer to: the first cycle performed during conventional etching is the value of the process parameter used for the first cycle in conventional etching.
For each of the process parameters, the final value of the process parameter for conventional etching may refer to the value of the process parameter employed by the last cycle performed during conventional etching, i.e., the last cycle in conventional etching.
In some embodiments, the process parameters described above include at least one of the following: deposition time, etching time, lower electrode power, cavity pressure, upper radio frequency power, deposition air inflow, etching air inflow and back pressure.
Referring to fig. 2, a flow chart of a conventional etch is shown when an increment is applied to a process parameter.
In fig. 2, the application of increasing deposition time, the application of increasing lower electrode power is exemplarily shown.
The number of times of cycle execution of the conventional etching is represented by n total.
The process parameters involved in the deposition step in the cycle include deposition time. The initial value of the conventional etch deposition time is denoted by t initial. The final value of the conventional etch deposition time is represented by t final. The deposition time taken for the nth cycle is denoted by t.
t＝tinitial+(tfinal-tinitial)*n/ntotal。
The process parameters involved in the physical bombardment step include the bottom electrode power. The initial value of electrode power under conventional etching is denoted by P initial. The final value of electrode power under conventional etching is denoted by P final. The lower electrode power used in the nth cycle is denoted by P.
P＝Pinitial+(Pfinal-Pinitial)*n/ntotal。
In the application, when the cycle execution times of the complementary etching are calculated, the etching depth of the conventional etching can be divided by the cycle execution times of the conventional etching to obtain the average etching rate of the conventional etching. Then, the average etching rate of the complementary etching can be determined according to the association relation between the average etching rate of the conventional etching and the average etching rate of the complementary etching and the average etching rate of the conventional etching. And finally, subtracting the actual etching depth from the target etching depth to obtain the residual etching depth, and dividing the residual etching depth by the average etching rate of the complementary etching to obtain the cycle execution times of the complementary etching.
In some embodiments, counting the number of cycles of the complementary etch includes: dividing the etching depth of the conventional etching by the cycle execution times to obtain the average etching rate of the conventional etching; taking the average etching rate of conventional etching as the average etching rate of the complementary etching; subtracting the actual etching depth from the target etching depth to obtain the residual etching depth; dividing the residual etching depth by the average etching rate of the complementary etching to obtain the cycle execution times of the complementary etching.
The target etch depth is indicated by D 0. The first time steps 101-103 are performed, the etch depth of the conventional etch is actually the actual etch depth. The etch depth of the conventional etch and the actual etch depth are denoted by D 1.
The number of times of cycle execution of the conventional etching is represented by n total. The average etch rate for conventional etching is D 1/ntotal. The remaining etch depth was D 0-D1. The number of times of performing the cycle of the complementary etching is represented by n add.
The average etch rate of the regular etch may be taken as the average etch rate of the supplemental etch.
The number of times n add of the cycle execution of the complementary etching is:
nadd＝(D0-D1)/(D1/ntotal)
＝ntotal*(D0-D1)/D1。
in the application, after the number of times of the cycle execution of the complementary etching is calculated, the numerical value of each process parameter in each cycle during the complementary etching can be further calculated.
For each of the process parameters, the initial value of the process parameter at the time of the complementary etching may refer to: the first cycle performed during the complementary etch complements the value of the process parameter used in the first cycle of the etch.
For each of the process parameters, the final value of the process parameter at the time of the complementary etch may refer to: the last cycle performed during the complementary etch is the value of the process parameter used for the last cycle in the complementary etch.
For each of the process parameters, the final value of the process parameter at the time of conventional etching may be taken as the initial value of the process parameter at the time of complementary etching.
For each process parameter in the process parameters, the product of the cycle execution times of the complementary etching and the conventional increment corresponding to the process parameter can be added with the initial value of the process parameter in the complementary etching to obtain the final value of the process parameter in the complementary etching.
The conventional increment corresponding to the process parameter may be: the difference of the final value of the process parameter of the conventional etch minus the initial value of the process parameter of the conventional etch divided by the number of cycles performed by the conventional etch.
For each process parameter, after determining the initial value of the process parameter in the complementary etching and obtaining the final value of the process parameter in the complementary etching, the value of the process parameter adopted by the nth cycle of execution in the complementary etching can be determined.
In the present application, for each of the process parameters, an incremental amount on the process parameter may be allocated for each cycle of the complementary etch.
For each of the process parameters, an incremental amount on the process parameter allocated for each cycle may be such that it gradually increases from an initial value for the process parameter at the time of the complementary etch to a final value for the process parameter at the time of the complementary etch.
For each of the process parameters, the n-th cycle of the complementary etching uses the process parameters having the values: the n-1 th cycle of the supplemental etch takes the sum of the value of the process parameter and the incremental amount of the n-1 th cycle of the supplemental etch on the process parameter.
For each of the process parameters, since the initial value of the process parameter at the time of the complementary etching has been determined, the sum of the initial value of the process parameter at the time of the complementary etching and the incremental amount of the cycle executed 1 st time at the time of the complementary etching on the process parameter can be calculated, the value of the process parameter adopted by the cycle executed 2 nd time at the time of the complementary etching is obtained, and so on. Thus, the initial value of the technological parameter in the supplementary etching, the numerical value of the technological parameter adopted in the nth cycle in the supplementary etching and the final value of the technological parameter in the supplementary etching are finally obtained, namely the numerical value of each technological parameter in each cycle in the supplementary etching.
In some embodiments, the values of the process parameters in each cycle of the supplemental etch are calculated according to the following equation:
Xinitial-add＝Xfinal
Xfinal-add＝Xfinal+(Xfinal-Xinitial)*nadd/ntotal
X＝Xinitial-add+(Xfinal-add-Xinitial-add)*n/nadd
Wherein, X initial-add represents an initial value of the process parameter in the complementary etching, X final represents a final value of the process parameter in the normal etching, X final-add represents a final value of the process parameter in the complementary etching, X initial represents an initial value of the process parameter in the normal etching, n add represents the number of times of cycle execution of the complementary etching, ntotal represents the number of times of cycle execution of the normal etching, and X represents a parameter value of the process parameter adopted by the nth cycle execution in the complementary etching.
For any one of the process parameters, when calculating the value of the process parameter in each cycle during the complementary etching, the value of X initial in the above formula is the initial value of the process parameter during the conventional etching, and the value of X final in the above formula is the final value of the process parameter during the conventional etching.
For example, when calculating the deposition time taken for each cycle of performing the supplemental etch, the initial value of the conventional etch deposition time is t initial. The final value of the conventional etch deposition time is t final. The initial value of the complementary etch deposition time is t initial-add, and the final value of the complementary etch deposition time is t final-add.
tinitial-add＝tfinal
tfinal-add＝tfinal+(tfinal-tinitial)*nadd/ntotal
＝tfinal+(tfinal-tinitial)*ntotal*(D0-D1)/D1/ntotal
＝tfinal+(tfinal-tinitial)*(D0-D1)/D1
The deposition time t adopted by the nth execution cycle in the supplementary etching is as follows:
t＝tinitial-add+(tfinal-add-tinitial-add)*n/nadd
＝tfinal+[tfinal+(tfinal-tinitial)*(D0-D1)/D1-tfinal]*n/nadd
＝tfinal+[tfinal+(tfinal-tinitial)*(D0-D1)/D1-tfinal]*n/[ntotal*(D0-D1)/D1].
For example, when calculating the lower electrode power employed for each cycle of performing the supplemental etch, the initial value of the conventional etch lower electrode power is P initial and the final value of the conventional etch lower electrode power is P final. The initial value of the electrode power under the supplementary etching is P initial-add, and the final value of the electrode power under the supplementary etching is P final-add.
Pinitial-add＝Pfinal
Pfinal-add＝Pfinal+(Pfinal-Pinitial)*nadd/ntotal
The power P of the lower electrode adopted by the nth execution cycle in the supplementary etching is as follows:
P＝Pfinal+[Pfinal+(Pfinal-Pinitial)*(D0-D1)/D1-Pfinal]*n/[ntotal*(D0-D1)
/D1]。
And step 103, performing the complementary etching based on the calculated cycle execution times of the complementary etching and the numerical value of the technological parameter in each cycle.
When the complementary etching is executed, the determined numerical values of the technological parameters adopted by the cycles executed during the complementary etching can be adopted in sequence according to the execution sequence of the cycles during the complementary etching, and the corresponding cycles executed during the complementary etching are executed until the accumulated execution times of the cycles executed during the complementary etching reach the determined cycle execution times of the complementary etching.
In some embodiments, further comprising: and after the complementary etching is executed, returning to the step of acquiring the current actual etching depth and judging whether the actual etching depth reaches the target etching depth, and circularly executing the complementary etching method.
And returning to obtain the current actual etching depth, judging whether the actual etching depth reaches the target etching depth, firstly obtaining the current actual etching depth, namely, the actual etching depth after the complementary etching is executed, and then judging whether the actual etching depth reaches the target etching depth.
The current actual etching depth obtained by the step of returning to obtain the current actual etching depth and judging whether the actual etching depth reaches the target etching depth may be: the distance between the position reached after performing the above-mentioned complementary etch and the starting position of the entire etch task.
When the current actual etching depth obtained by the step of obtaining the current actual etching depth in a returning way and judging whether the actual etching depth reaches the target etching depth does not reach the target etching depth, the cycle execution times of the re-replenishment etching and the parameter values of each process parameter in each cycle in the re-replenishment etching can be determined, and the replenishment etching can be executed again.
Referring to fig. 3, a schematic flow chart of the complementary etching when the current actual etching depth does not reach the target etching depth is shown.
When i=1, n i is the number n total of cycle executions of the conventional etching for which n 1,n1 is an input. The target etch depth D 0, by inputting the number of times n total of the cycle execution of the conventional etch, the start value and the final value of the applied incremental process parameter, the value of the applied incremental process parameter employed by each of the executed cycles in n total can be determined. Based on the value of the applied incremental process parameter taken by each of the n total cycles, n total cycles are performed, with the etch depth reached after n total cycles being performed, i.e., the current actual etch depth D 1.
If D 1 does not reach D 0, performing the first complementary etching. Updating i, i=i+1, and updating i to i+1, i.e. 2. The number of times of cycle execution of the first supplemental etch, n 2, and the number of times of each cycle of n 2 at the time of the first supplemental etch were counted as values for each process parameter that was applied incrementally. The etch depth reached after n 2 cycles of the complementary etches are performed, i.e., the current actual etch depth D 2.
If D 2 still does not reach D 0, performing a second complementary etching. Updating i, i=i+1, and updating i to i+1, i.e. 3. The number of times n 3 of the cycle execution of the second supplemental etch and the value of each process parameter applied incrementally during each of n 3 of the second supplemental etch were calculated. After n 3 cycles of the complementary etches are performed, an etch depth of D 3, the current actual etch depth D 3, and so on, is reached until D i reaches D 0.
Referring to fig. 4, a block diagram of a semiconductor etching apparatus according to an embodiment of the present application is shown. The semiconductor etching apparatus includes: the obtaining unit 401, the calculating unit 402, and the first complementary etching unit 403.
The obtaining unit 401 is configured to obtain the current actual etching depth, and determine whether the actual etching depth reaches the target etching depth;
The calculating unit 402 is configured to calculate the number of times of cycle execution of the complementary etching and the numerical value of each process parameter in each cycle based on the actual etching depth, the target etching depth, the etching depth of the regular etching, the number of times of cycle execution of the regular etching, the initial value and the final value of each process parameter of the regular etching if the actual etching depth does not reach the target etching depth;
The supplemental etching unit 403 is configured to perform supplemental etching based on the calculated number of times the supplemental etching is performed and the value of the process parameter in each cycle.
In some embodiments, the supplemental etching unit 403 is further configured to trigger the acquisition unit 402 again to cycle the supplemental etching after performing the supplemental etching.
In some embodiments, the above process parameters include at least one of: deposition time, etching time, lower electrode power, cavity pressure, upper radio frequency power, deposition air inflow, etching air inflow and back pressure.
In some embodiments, the computing unit 402 is further configured to divide the etch depth of the conventional etch by the number of cycles performed to obtain an average etch rate of the conventional etch; taking the average etching rate of conventional etching as the average etching rate of complementary etching; subtracting the actual etching depth from the target etching depth to obtain the residual etching depth; dividing the residual etching depth by the average etching rate of the complementary etching to obtain the cycle execution times of the complementary etching.
In some embodiments, the calculation unit 402 is further configured to calculate the values of the process parameters in each cycle of the complementary etch according to the following formula:
Xinitial-add＝Xfinal
Xfinal-add＝Xfinal+(Xfinal-Xinitial)*nadd/ntotal
X＝Xinitial-add+(Xfinal-add-Xinitial-add)*n/nadd
Wherein, X initial-add represents an initial value of each process parameter in the complementary etching, X final represents a final value of each process parameter in the normal etching, X final-add represents a final value of each process parameter in the complementary etching, X initial represents an initial value of each process parameter in the normal etching, n add represents the number of times of cycle execution of the complementary etching, n total represents the number of times of cycle execution of the normal etching, and X represents a parameter value of each process parameter adopted in the nth cycle in the complementary etching.
Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (8)
1. A method of complementary etching, the method comprising:
acquiring the current actual etching depth, and judging whether the actual etching depth reaches the target etching depth or not;
if the actual etching depth does not reach the target etching depth, calculating the cycle execution times of complementary etching and the numerical value of each process parameter in each cycle based on the actual etching depth, the target etching depth, the etching depth of conventional etching, the cycle execution times of conventional etching, the initial value and the final value of each process parameter of conventional etching;
executing the complementary etching based on the calculated cycle execution times of the complementary etching and the numerical value of the technological parameter in each cycle;
The numerical value of each technological parameter in each cycle of the complementary etching is determined according to the following formula:
Xinitial-add＝Xfinal，
Xfinal-add＝Xfinal+(Xfinal-Xinitial)*nadd/ntotal，
X＝Xinitial-add+(Xfinal-add-Xinitial-add)*n/nadd，
n add＝(D0-D1)/(D1/ntotal), wherein X initial-add represents an initial value of the process parameter in the complementary etching, X final represents a final value of the process parameter in the conventional etching, X final-add represents a final value of the process parameter in the complementary etching, X initial represents an initial value of the process parameter in the conventional etching, n add represents the number of times of cycle execution of the complementary etching, n total represents the number of times of cycle execution of the conventional etching, X represents a parameter value of the process parameter adopted in the nth cycle in the complementary etching, 1.ltoreq.n.ltoreq. add,D1/ntotal is an average etching rate of the conventional etching, D 0-D1 is a residual etching depth, D 0 is a target etching depth, and D 1 is an actual etching depth.
2. The method according to claim 1, wherein after the performing of the complementary etching, returning to the step of obtaining the current actual etching depth, determining whether the actual etching depth reaches a target etching depth, and performing the complementary etching method in a circulating manner.
3. The method according to claim 1 or 2, wherein the process parameters comprise at least one of: deposition time, etching time, lower electrode power, cavity pressure, upper radio frequency power, deposition air inflow, etching air inflow and back pressure.
4. The method according to claim 1 or 2, wherein calculating the number of times the complementary etching is performed in a cycle comprises:
dividing the etching depth of the conventional etching by the cycle execution times to obtain the average etching rate of the conventional etching;
Taking the average etching rate of the conventional etching as the average etching rate of the complementary etching;
Subtracting the actual etching depth from the target etching depth to obtain a residual etching depth;
Dividing the residual etching depth by the average etching rate of the complementary etching to obtain the cycle execution times of the complementary etching.
5. A semiconductor etching apparatus, the apparatus comprising:
The acquisition unit is configured to acquire the current actual etching depth and judge whether the actual etching depth reaches the target etching depth or not;
The calculation unit is configured to calculate the cycle execution times of the complementary etching and the numerical value of each process parameter in each cycle based on the actual etching depth, the target etching depth, the etching depth of the conventional etching, the cycle execution times of the conventional etching, the initial value and the final value of each process parameter of the conventional etching if the actual etching depth does not reach the target etching depth;
A complementary etching unit configured to perform the complementary etching based on the calculated number of times of the cycle execution of the complementary etching and the numerical value of the process parameter in each cycle;
The numerical value of each technological parameter in each cycle of the complementary etching is determined according to the following formula:
Xinitial-add＝Xfinal，
Xfinal-add＝Xfinal+(Xfinal-Xinitial)*nadd/ntotal，
X＝Xinitial-add+(Xfinal-add-Xinitial-add)*n/nadd，
n add＝(D0-D1)/(D1/ntotal), wherein X initial-add represents an initial value of the process parameter in the complementary etching, X final represents a final value of the process parameter in the conventional etching, X final-add represents a final value of the process parameter in the complementary etching, X initial represents an initial value of the process parameter in the conventional etching, n add represents the number of times of cycle execution of the complementary etching, n total represents the number of times of cycle execution of the conventional etching, X represents a parameter value of the process parameter adopted in the nth cycle in the complementary etching, 1.ltoreq.n.ltoreq. add,D1/ntotal is an average etching rate of the conventional etching, D 0-D1 is a residual etching depth, D 0 is a target etching depth, and D 1 is an actual etching depth.
6. The apparatus of claim 5, wherein the supplemental etching unit is further configured to trigger the acquisition unit again to cycle the supplemental etching after performing the supplemental etching.
7. The apparatus according to claim 5 or 6, wherein the process parameters comprise at least one of: deposition time, etching time, lower electrode power, cavity pressure, upper radio frequency power, deposition air inflow, etching air inflow and back pressure.
8. The apparatus according to claim 5 or 6, wherein the calculation unit is further configured to divide the etch depth of the regular etch by the number of cycles performed to obtain an average etch rate of the regular etch; taking the average etching rate of the conventional etching as the average etching rate of the complementary etching; subtracting the actual etching depth from the target etching depth to obtain a residual etching depth; dividing the residual etching depth by the average etching rate of the complementary etching to obtain the cycle execution times of the complementary etching.
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| CN101599433A (en) * | 2008-06-03 | 2009-12-09 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor etching method and etching system |
| CN101840207A (en) * | 2009-03-13 | 2010-09-22 | 台湾积体电路制造股份有限公司 | Method and apparatus for advanced process control |
| CN106298636A (en) * | 2015-05-22 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | A kind of control method of ultralow K dielectric material etching depth |
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| JP4444428B2 (en) * | 2000-01-28 | 2010-03-31 | 東京エレクトロン株式会社 | Etching depth detection method, etching monitor apparatus and etching apparatus |
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| CN101599433A (en) * | 2008-06-03 | 2009-12-09 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor etching method and etching system |
| CN101840207A (en) * | 2009-03-13 | 2010-09-22 | 台湾积体电路制造股份有限公司 | Method and apparatus for advanced process control |
| CN106298636A (en) * | 2015-05-22 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | A kind of control method of ultralow K dielectric material etching depth |
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