CN112481606A - Gas source and system for PECVD deposition of solar cell doping layer - Google Patents

Gas source and system for PECVD deposition of solar cell doping layer Download PDF

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CN112481606A
CN112481606A CN202011246917.1A CN202011246917A CN112481606A CN 112481606 A CN112481606 A CN 112481606A CN 202011246917 A CN202011246917 A CN 202011246917A CN 112481606 A CN112481606 A CN 112481606A
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solar cell
gas
doping layer
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process chamber
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闫路
上官泉元
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Jiangsu Jietai Photoelectric Technology Co ltd
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention discloses a preparation method of a PECVD (plasma enhanced chemical vapor deposition) deposited solar cell doping layer, which comprises the following steps of: s1, conveying a silicon wafer placed on a carrier into a process chamber; s2, vacuumizing the process cavity; and S3, introducing mixed gas of halogenated silane and doping gas into the process cavity, starting a power supply to excite plasma to discharge, simultaneously heating the process cavity to a reaction temperature, reacting the mixed gas of halogenated silane and doping gas in a low-pressure vacuum environment, and generating a doped silicon film on the surface of the silicon wafer. According to the invention, the halogen silane without H is used for replacing flammable, explosive and high-risk silane as the reaction gas for PECVD deposition of the doping layer, so that the use safety is higher, and because the halogen silane does not contain H and can provide Si element required for deposition of a thin film layer, and the foaming phenomenon cannot be caused by the fact that the content of H in phosphine or borane is less, the problem of foaming of the deposition doping layer caused by silane is solved, and the yield of the solar cell is greatly improved.

Description

Gas source and system for PECVD deposition of solar cell doping layer
Technical Field
The invention relates to the technical field of solar cell preparation, in particular to a gas source and a system for depositing a solar cell doping layer by PECVD.
Background
In recent years, with the research and development of crystalline silicon solar cells, theories and practices prove that surface passivation is the necessary way for improving the cell efficiency, and the passivation of an alumina thin layer is widely popularized on a PERC cell. With the continuous reduction of the thickness of the silicon wafer of the crystalline silicon cell, and for the cell with a certain thickness, when the diffusion length of minority carriers is greater than the thickness of the silicon wafer, the recombination rate of the surface will bring adverse effects to the efficiency of the solar cell, and the preparation of the doping layer can provide field passivation, form a good passivation contact effect with the silicon substrate, reduce the recombination loss and improve the efficiency of the solar cell.
The passivation contact of tunneling oxide (TOPCon) technology is one of the key research directions of the current industrialized high-efficiency solar cell, and is a passivation contact cell structure which can reduce surface recombination and does not need to open pores.
At present, when a TOPCon solar cell prepares a doped layer by using a PECVD method, silane and phosphane (or borane) are generally used as reaction gases, the silane and the phosphane (or borane) enter a reaction chamber and are excited by a radio frequency or other kinds of power supplies to discharge to form a plasma state, and gas molecules are excited to form active ions which mutually collide and react in a vacuum environment. However, a large amount of H ions from silane in the plasma enter the film during the CVD process and are treated with H in the subsequent high temperature annealing process2Overflow of the film, resulting in rupture and chipping of the film in the overflow area, a phenomenon known as H2The final phosphorus (or boron) doped layer has a greatly reduced passivation effect due to the bubbling problem, and thus the ideal effect cannot be achieved. The foaming phenomenon is more serious when the thickness of the film is increased, and the thickness of the passivation doping layer is generally required to be 20-200nm, so the foaming problem seriously influences the yield of the solar cell.
Disclosure of Invention
In order to solve the technical problem, the invention provides a gas source for PECVD deposition of a doping layer of a solar cell, wherein the gas source adopts a mixed gas of halogenated silane and a doping gas.
The invention also provides a preparation method of the PECVD deposition solar cell doping layer, which comprises the following steps:
s1, conveying the silicon wafer placed on a carrier into a process chamber, wherein the conveying mode can be plate type, chain type, tube type and the like, and is not specifically limited;
s2, vacuumizing the process cavity;
and S3, introducing mixed gas of halogenated silane and doping gas into the process cavity, starting a power supply to excite plasma to discharge, heating the process cavity, and generating a doped silicon film on the surface of the silicon wafer in a reaction region in a low-pressure vacuum environment so as to obtain an in-situ doping layer to realize a passivation effect.
In step S2, the vacuum pressure in the process chamber is 1-30 Pa; in step S3, the heating temperature in the process chamber is 100-700 ℃.
The invention also provides a system for depositing the solar cell doping layer by PECVD, which comprises a conveying system and a reaction system;
the conveying system comprises a conveying line and a carrier arranged on the conveying line, and the silicon wafer is placed on the carrier;
the reaction system comprises a process cavity, vacuum equipment for vacuumizing the process cavity, gas supply equipment for introducing process gas into the process cavity, and a heating device arranged in the process cavity.
Wherein the gas supply equipment comprises doping gas supply equipment and halogenated silane supply equipment; the halosilane supply device is provided with a heating mechanism for heating and gasifying halosilane to form a gaseous source and introducing the gaseous source into the process chamber.
The heating device is used for heating the glass substrate by using infrared heating, microwave heating and laser heating.
The invention also provides a solar cell doping layer prepared by the system and the method, which is used for preparing the TOPCon solar cell.
By the technical scheme, the invention adopts the halogen silane (such as SiCl) without H4And the like) to replace flammable, explosive and high-risk silane as a reaction gas for PECVD deposition doping layer, the use safety is higher, and because the halogenated silane does not contain H and can provide Si element required by deposition of a thin film layer, and the H content in the phosphine (borane) is less, the bubbling phenomenon can not be caused, thereby solving the bubbling problem of the deposition doping layer caused by the silane and greatly improving the yield of the solar cell.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below.
FIG. 1 is a schematic view of a manufacturing system according to an embodiment of the present invention.
The figures in the drawings represent: 10. a silicon wafer; 20. a process chamber; 30. a vacuum device; 40. a gas supply device; 50. a heating device; 60. a reaction zone.
Detailed Description
Example 1:
referring to the preparation system for depositing the solar cell doping layer by PECVD shown in fig. 1, the preparation method for depositing the solar cell doping layer by PECVD provided by the invention comprises the following steps:
s1, conveying the silicon wafer 10 placed on a carrier into a process chamber 20 through a conveying line, wherein the conveying mode can be plate type, chain type, pipe type and the like, and is not particularly limited;
s2, vacuumizing the process cavity 20 to 1-30Pa by adopting vacuum equipment 30;
s3, introducing mixed gas of halogenated silane and doping gas into the process cavity 20 through the gas supply equipment 40, starting a power supply to excite plasma discharge, simultaneously heating the temperature in the process cavity 20 to 700 ℃ by adopting one or more of infrared heating, microwave heating and laser heating through the heating device 50, and generating a doped silicon film on the surface of the silicon wafer 10 in the reaction region 60 in the low-pressure vacuum environment so as to obtain an in-situ doping layer to realize the passivation effect.
Wherein the gas supply apparatus 40 includes a dopant gas supply apparatus and a halosilane supply apparatus; the halosilane supply apparatus has a heating mechanism for heating and vaporizing halosilane to form a gaseous source and passing it into the process chamber 20, for example, SiCl4Generally, heating above 58 ℃ will vaporize the vapor to form a gaseous source.
The following table shows comparative examples of 2 sets of different process parameters of this example 1:
Figure BDA0002770332990000031
based on the 2 groups of comparative examples in the table above, it can be known that the invention adopts halogen silane without H to replace flammable, explosive and high-risk silane as the reaction gas for PECVD deposition doping layer, the use safety is higher, and the halogen silane does not contain H and can provide Si element required for deposition of thin film layer, while the H content in phosphine (borazane) is less and does not cause foaming phenomenon, thereby solving the problem of foaming of deposition doping layer caused by silane and greatly improving the yield of solar cell.
Example 2:
the solar cell doping layer prepared based on the system and method of example 1 above was used for TOPCon solar cell preparation.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to the above-described embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (8)

1. The gas source for PECVD deposition of the solar cell doping layer is characterized in that the gas source adopts a mixed gas of halogenated silane and a doping gas.
2. A preparation method of a solar cell doping layer through PECVD deposition is characterized by comprising the following steps:
s1, conveying a silicon wafer (10) placed on a carrier into a process chamber (20);
s2, vacuumizing the process cavity (20);
s3, introducing the mixed gas of the halosilane and the doping gas according to the claim 1 into the process cavity (20), starting a power supply to excite plasma discharge, heating the process cavity (20), reacting in a low-pressure vacuum environment, and generating a doped silicon film on the surface of the silicon wafer (10), so that an in-situ doping layer is obtained to realize a passivation effect.
3. A method according to claim 2, wherein in step S2, the vacuum pressure in the process chamber (20) is 1-30 Pa; in step S3, the heating temperature in the process chamber (20) is 100-700 ℃.
4. A system for depositing a solar cell doping layer by PECVD is characterized by comprising a conveying system and a reaction system;
the conveying system comprises a conveying line and a carrier arranged on the conveying line, and a silicon wafer (10) is placed on the carrier;
the reaction system comprises a process chamber (20), a vacuum device (30) for vacuumizing the process chamber (20), a gas supply device (40) for introducing process gas into the process chamber (20), and a heating device (50) arranged in the process chamber (20).
5. A PECVD deposition solar cell doping layer preparation system according to claim 4, wherein the gas supply device (40) comprises a doping gas supply device and a halosilane supply device; the halosilane supply apparatus has a heating mechanism for heating and vaporizing halosilane to form a gaseous source and passing into the process chamber (20).
6. A PECVD deposition solar cell doping layer system according to claim 4, wherein the heating device (50) is heated by one or more of infrared heating, microwave heating and laser heating.
7. A solar cell doped layer, characterized by being prepared using the system of claim 4 and the method of claim 2.
8. A TOPCon solar cell comprising the doped layer of claim 7.
CN202011246917.1A 2020-11-10 2020-11-10 Gas source and system for PECVD deposition of solar cell doping layer Pending CN112481606A (en)

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Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142712A (en) * 2001-11-06 2003-05-16 Mitsubishi Heavy Ind Ltd Solar battery and method for manufacturing the same
CN1657648A (en) * 2000-06-12 2005-08-24 安捷伦科技有限公司 Chemical vapor deposition method for amorphous silicon and resulting thin film
TW200626740A (en) * 2004-10-06 2006-08-01 Okmetic Oyj CVD doped structures
CN101617409A (en) * 2006-07-28 2009-12-30 塞纳根设备有限公司 Make the method and system of polysilicon and silicon-germanium solar cells
CN101964368A (en) * 2009-07-21 2011-02-02 深圳市宇光高科新能源技术有限公司 Laminated solar battery and manufacturing method thereof
CN102037156A (en) * 2008-03-05 2011-04-27 Sri国际公司 Substrates for silicon solar cells and methods of producing the same
US8012859B1 (en) * 2010-03-31 2011-09-06 Tokyo Electron Limited Atomic layer deposition of silicon and silicon-containing films
CN103094403A (en) * 2011-10-28 2013-05-08 上海太阳能工程技术研究中心有限公司 Serial-type equipment for manufacture of double-faced heterojunction solar cell in plasma enhanced chemical vapor deposition (PECVD) method and process
CN103952680A (en) * 2006-01-25 2014-07-30 赢创德固赛有限责任公司 Process for producing a silicon film on a substrate surface by vapor deposition
CN108336184A (en) * 2018-02-09 2018-07-27 中国科学院宁波材料技术与工程研究所 A kind of preparation method of tunnelling oxygen passivation contact crystalline silicon solar cell
CN109562951A (en) * 2016-12-14 2019-04-02 瓦克化学股份公司 The method for being used to prepare polysilicon
CN110952073A (en) * 2019-11-04 2020-04-03 江苏杰太光电技术有限公司 Thin layer SiO2Preparation method of passivation film and prepared battery

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1657648A (en) * 2000-06-12 2005-08-24 安捷伦科技有限公司 Chemical vapor deposition method for amorphous silicon and resulting thin film
JP2003142712A (en) * 2001-11-06 2003-05-16 Mitsubishi Heavy Ind Ltd Solar battery and method for manufacturing the same
TW200626740A (en) * 2004-10-06 2006-08-01 Okmetic Oyj CVD doped structures
CN103952680A (en) * 2006-01-25 2014-07-30 赢创德固赛有限责任公司 Process for producing a silicon film on a substrate surface by vapor deposition
CN101617409A (en) * 2006-07-28 2009-12-30 塞纳根设备有限公司 Make the method and system of polysilicon and silicon-germanium solar cells
CN102037156A (en) * 2008-03-05 2011-04-27 Sri国际公司 Substrates for silicon solar cells and methods of producing the same
CN101964368A (en) * 2009-07-21 2011-02-02 深圳市宇光高科新能源技术有限公司 Laminated solar battery and manufacturing method thereof
US8012859B1 (en) * 2010-03-31 2011-09-06 Tokyo Electron Limited Atomic layer deposition of silicon and silicon-containing films
CN103094403A (en) * 2011-10-28 2013-05-08 上海太阳能工程技术研究中心有限公司 Serial-type equipment for manufacture of double-faced heterojunction solar cell in plasma enhanced chemical vapor deposition (PECVD) method and process
CN109562951A (en) * 2016-12-14 2019-04-02 瓦克化学股份公司 The method for being used to prepare polysilicon
CN108336184A (en) * 2018-02-09 2018-07-27 中国科学院宁波材料技术与工程研究所 A kind of preparation method of tunnelling oxygen passivation contact crystalline silicon solar cell
CN110952073A (en) * 2019-11-04 2020-04-03 江苏杰太光电技术有限公司 Thin layer SiO2Preparation method of passivation film and prepared battery

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Application publication date: 20210312