CN112480407A - Low-dielectric and low-loss polyimide film and preparation method thereof - Google Patents
Low-dielectric and low-loss polyimide film and preparation method thereof Download PDFInfo
- Publication number
- CN112480407A CN112480407A CN202011372180.8A CN202011372180A CN112480407A CN 112480407 A CN112480407 A CN 112480407A CN 202011372180 A CN202011372180 A CN 202011372180A CN 112480407 A CN112480407 A CN 112480407A
- Authority
- CN
- China
- Prior art keywords
- low
- polyimide film
- dielectric
- molecular sieve
- mesoporous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/22—Expanded, porous or hollow particles
- C08K7/24—Expanded, porous or hollow particles inorganic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/10—Encapsulated ingredients
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
The invention provides a low-dielectric and low-loss polyimide film and a preparation method thereof, which comprises the steps of reacting a mesoporous molecular sieve with tetraethoxysilane, an amino silane coupling agent containing ammonia and ammonia water to obtain a mesoporous material with surface amino modification; and carrying out polycondensation reaction on the mesoporous material with the amino-modified surface, diamine and dianhydride monomers, and then carrying out thermal imidization and film formation to obtain the low-dielectric and low-loss polyimide film. According to the low-dielectric and low-loss polyimide film and the preparation method thereof, the mesoporous material with uniform size and amino-modified surface is introduced into the polyimide, so that the dielectric constant and the dielectric loss of the polyimide film are effectively reduced.
Description
Technical Field
The invention relates to the technical field of insulating materials, in particular to a low-dielectric and low-loss polyimide film and a preparation method thereof.
Background
Polyimide is a high-performance resin material, and is widely applied to the fields of engineering plastics, microelectronic industry, communication technology, photoelectric display technology and the like on the basis of excellent heat resistance, mechanical and mechanical properties, chemical corrosion resistance, high insulating property and low thermal expansion coefficient. Although the above excellent properties of polyimide satisfy the requirements of general electronic packages, it does not have a low dielectric constant and thus cannot satisfy the requirements of advanced electronic packages.
The dielectric constant of polyimide is related to its molecular polarization, and there are two general methods for lowering the dielectric constant: one is to reduce the molecular polarizability of polyimide, which is determined by the molecular structure and chemical composition. Because the C-F bond has low molecular polarizability, the dielectric constant and loss of the polyimide can be effectively reduced by introducing a fluorinated group or fluorine-containing high polymer resin into the polyimide. However, the fluorinated polyimide monomer is very expensive, and fluorine-containing polymers such as polytetrafluoroethylene have poor compatibility with polyimide, resulting in a decrease in mechanical properties of the final film.
Another approach is to reduce the density of polarized molecules per unit volume of polyimide, which is generally achieved by increasing the intrinsic free volume of the polyimide and introducing nanovoided structures. The intrinsic free volume is a molecular-scale void structure generated by disordered stacking of a high molecular chain, and can be generally realized by introducing an asymmetric structural group and a large-volume functional group into a polyimide molecule to reduce the stacking density of the polyimide molecular chain, and the purpose of introducing the nano void structure is to introduce air (the dielectric constant of the air is about 1.0) into the polyimide, so that the dielectric constant can be effectively reduced and can generally reach 2.0-3.0.
However, the dielectric property improvement effect of the polyimide film is not very desirable because of the problems that the nano-void structure is difficult to be uniformly dispersed in the polyimide matrix and the nano-void structure has poor dimensional uniformity.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides a low-dielectric and low-loss polyimide film and a preparation method thereof.
The invention provides a preparation method of a polyimide film with low dielectric constant and low loss, which comprises the following steps:
s1, reacting the mesoporous molecular sieve with tetraethoxysilane, an amino silane coupling agent containing ammonia and ammonia water to obtain a mesoporous material with the surface modified by amino;
s2, carrying out polycondensation reaction on the mesoporous material with the surface amino modified, diamine and dianhydride monomers, and then carrying out thermal imidization and film formation to obtain the low-dielectric and low-loss polyimide film.
Preferably, before step S1, the mesoporous molecular sieve is first mixed with an organic amine to adsorb the organic amine in the pores.
Preferably, the mesoporous molecular sieve is at least one of an MCM, KIT, SBA, or FDU molecular sieve.
Preferably, the organic amine is an aliphatic amine having 10 to 20 carbon atoms, preferably decylamine or hexadecylamine.
Preferably, the aminosilane-containing coupling agent is at least one of 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyldiethoxymethylsilane, 3- (3-aminopropylamino) propyltrimethoxysilane or 3- (3-aminopropylamino) propyltriethoxysilane.
Preferably, the mass volume ratio of the mesoporous molecular sieve to the tetraethoxysilane and the amino-containing silanization coupling agent is 1g:2-4mL:1-2 mL.
Preferably, the mass ratio of the mesoporous molecular sieve to the organic amine is 1: 0.1-0.4.
Preferably, the diamine monomer is at least one of 4, 4 '-diaminodiphenyl ether, 4' -diaminodiphenyl sulfide, 4 '-diaminodiphenylmethane or 4, 4' -diaminodiphenyl sulfone;
the tetracarboxylic dianhydride monomer is at least one of 3, 3', 4, 4' -biphenyl tetracarboxylic dianhydride, 3', 4, 4' -diphenyl ether tetracarboxylic dianhydride, 3', 4, 4' -benzophenone tetracarboxylic dianhydride or 3, 3', 4, 4' -diphenyl sulfone tetracarboxylic dianhydride.
Preferably, the mass ratio of the mesoporous molecular sieve to the diamine monomer is 1: 2-30.
The invention provides a low-dielectric and low-loss polyimide film which is prepared by the preparation method.
The low-dielectric and low-loss polyimide film is prepared by introducing mesoporous material with amino-modified surface into polyimide matrix, wherein the mesoporous material is prepared by reacting mesoporous molecular sieve with tetraethoxysilane, amino-containing silane coupling agent and ammonia water, so that the surface of the mesoporous molecular sieve is coated with amino-functionalized SiO2Thus, under the condition of keeping the surface structure of the mesoporous material unchanged, amino modifying groups can be uniformly distributed on the surface of the mesoporous material and can pass through SiO2The coating makes up the defect of inconsistent original structure and size of the mesoporous molecular sieve.
Once the mesoporous material with the surface modified by the amino groups is mixed with the polyimide, on one hand, the mesoporous material modified by the amino groups enhances the affinity of the mesoporous material and the polyimide matrix, and ensures that the mesoporous material is uniformly dispersed in the polyimide system; on the other hand, SiO2The coated mesoporous molecular sieve has consistent structure size, uniform aperture and long-range order, so that the polyimide film has ideal dielectric property improvement effect.
Furthermore, in the invention, before the surface amino modification of the mesoporous molecular sieve, the mesoporous molecular sieve is mixed with organic amine in advance, so that the organic amine is adsorbed into the pore channels of the mesoporous molecular sieve in advance to protect the pore channel structure of the molecular sieve, and then SiO generated by hydrolyzing tetraethoxysilane2The tendency is deposited on the surface of the non-pore channel position of the molecular sieve, thereby not only avoiding the influence on the pore size distribution of the original mesoporous molecular sieve, but also being capable of carrying out subsequent SiO treatment2Is deposited in the holeAnd the channel forms guide, so that the mesoporous material with more ordered pore size distribution is obtained, and the dielectric constant and the dielectric loss of the polyimide are further reduced.
Detailed Description
Hereinafter, the technical solution of the present invention will be described in detail by specific examples, but these examples should be explicitly proposed for illustration, but should not be construed as limiting the scope of the present invention.
Example 1
A preparation method of a polyimide film with low dielectric and low loss comprises the following steps:
s1, adding 0.5g of MCM-41 molecular sieve into 100mL of ethanol water solution (volume fraction of 70%) for uniform dispersion, adding 4.0mL of ammonia water (25%), 1.5mL of ethyl orthosilicate and 0.8mL of 3-aminopropyltriethoxysilane, stirring for reaction for 12 hours, and performing vacuum drying at 80 ℃ to obtain solid powder; washing the solid powder with ethanol and water for 2 times in sequence, and drying in vacuum at 60 ℃ to obtain a mesoporous material with amino modified surface;
s2, adding 0.5g of mesoporous material with surface amino modified into 40mL of N, N-dimethylacetamide under the atmosphere of nitrogen, adding 15mmol of 4, 4' -diaminodiphenyl ether, stirring until the mesoporous material is completely dissolved, adding 15mmol of 3, 3', 4, 4' -biphenyltetracarboxylic dianhydride, continuously stirring until the mesoporous material is completely dissolved, and stirring at room temperature for 6 hours to obtain a polyamic acid hybridization solution; and (2) defoaming the polyamic acid hybridization solution in vacuum, uniformly coating the polyamic acid hybridization solution on a glass substrate, treating the coated substrate at 60 ℃, 150 ℃, 200 ℃, 280 ℃ and 350 ℃ for 30min, naturally cooling to room temperature, taking out, placing the substrate in water for demoulding, and finally placing the substrate in a drying oven at 100 ℃ for drying and removing water to obtain the low-dielectric and low-loss polyimide film, wherein the thickness of the film is controlled to be 50 mu m.
Example 2
A preparation method of a polyimide film with low dielectric and low loss comprises the following steps:
s1, dissolving 0.3g of decylamine in 10mL of absolute ethyl alcohol, heating to 60 ℃, adding 1.0g of MCM-41 molecular sieve, stirring for reaction for 2 hours, filtering, and drying to obtain the MCM-41 molecular sieve with organic amine absorbed in the pore channel; adding the MCM-41 molecular sieve adsorbing the organic amine in the 0.5g pore channel into 100mL ethanol water solution (volume fraction is 70 percent) for uniform dispersion, adding 4.0mL ammonia water (25 percent), 1.5mL ethyl orthosilicate and 0.8mL 3-aminopropyltriethoxysilane, stirring for reaction for 12 hours, and then carrying out vacuum drying at 80 ℃ to obtain solid powder; adding the solid powder into 100mL of ethanol water solution (volume fraction 95%) dissolved with 0.2g of ammonium nitrate, stirring for 2h at 60 ℃, filtering, washing for 2 times by using ethanol and water in sequence, and drying in vacuum at 60 ℃ to obtain a mesoporous material with amino modified surface;
s2, adding 0.5g of mesoporous material with surface amino modified into 40mL of N, N-dimethylacetamide under the atmosphere of nitrogen, adding 15mmol of 4, 4' -diaminodiphenyl ether, stirring until the mesoporous material is completely dissolved, adding 15mmol of 3, 3', 4, 4' -biphenyltetracarboxylic dianhydride, continuously stirring until the mesoporous material is completely dissolved, and stirring at room temperature for 6 hours to obtain a polyamic acid hybridization solution; and (2) defoaming the polyamic acid hybridization solution in vacuum, uniformly coating the polyamic acid hybridization solution on a glass substrate, treating the coated substrate at 60 ℃, 150 ℃, 200 ℃, 280 ℃ and 350 ℃ for 30min, naturally cooling to room temperature, taking out, placing the substrate in water for demoulding, and finally placing the substrate in a drying oven at 100 ℃ for drying and removing water to obtain the low-dielectric and low-loss polyimide film, wherein the thickness of the film is controlled to be 50 mu m.
Example 3
A preparation method of a polyimide film with low dielectric and low loss comprises the following steps:
s1, adding 0.5g of KIT-6 molecular sieve into 100mL of ethanol water solution (volume fraction of 70%) for uniform dispersion, adding 4.0mL of ammonia water (25%), 1.5mL of ethyl orthosilicate and 0.8mL of 3-aminopropyltriethoxysilane, stirring for reaction for 12 hours, and performing vacuum drying at 80 ℃ to obtain solid powder; washing the solid powder with ethanol and water for 2 times in sequence, and drying in vacuum at 60 ℃ to obtain a mesoporous material with amino modified surface;
s2, adding 0.5g of mesoporous material with surface amino modified into 40mL of N, N-dimethylacetamide under the atmosphere of nitrogen, adding 15mmol of 4, 4' -diaminodiphenyl ether, stirring until the mesoporous material is completely dissolved, adding 15mmol of 3, 3', 4, 4' -biphenyltetracarboxylic dianhydride, continuously stirring until the mesoporous material is completely dissolved, and stirring at room temperature for 6 hours to obtain a polyamic acid hybridization solution; and (2) defoaming the polyamic acid hybridization solution in vacuum, uniformly coating the polyamic acid hybridization solution on a glass substrate, treating the coated substrate at 60 ℃, 150 ℃, 200 ℃, 280 ℃ and 350 ℃ for 30min, naturally cooling to room temperature, taking out, placing the substrate in water for demoulding, and finally placing the substrate in a drying oven at 100 ℃ for drying and removing water to obtain the low-dielectric and low-loss polyimide film, wherein the thickness of the film is controlled to be 50 mu m.
Example 4
A preparation method of a polyimide film with low dielectric and low loss comprises the following steps:
s1, dissolving 0.3g of decylamine in 10mL of absolute ethyl alcohol, heating to 60 ℃, adding 1.0g of KIT-6 molecular sieve, stirring for reacting for 2h, filtering, and drying to obtain the KIT-6 molecular sieve with organic amine adsorbed in the pore channel; adding the KIT-6 molecular sieve adsorbing the organic amine in the pore channel of 0.5g into 100mL of ethanol aqueous solution (volume fraction is 70 percent) for uniform dispersion, adding 4.0mL of ammonia water (25 percent), 1.5mL of ethyl orthosilicate and 0.8mL of 3-aminopropyltriethoxysilane, stirring for reaction for 12 hours, and then carrying out vacuum drying at 80 ℃ to obtain solid powder; adding the solid powder into 100mL of ethanol water solution (volume fraction 95%) dissolved with 0.2g of ammonium nitrate, stirring for 2h at 60 ℃, filtering, sequentially washing for 2 times by using ethanol and water, and vacuum drying at 60 ℃ to obtain a mesoporous material with amino modified surface;
s2, adding 0.5g of mesoporous material with surface amino modified into 40mL of N, N-dimethylacetamide under the atmosphere of nitrogen, adding 15mmol of 4, 4' -diaminodiphenyl ether, stirring until the mesoporous material is completely dissolved, adding 15mmol of 3, 3', 4, 4' -biphenyltetracarboxylic dianhydride, continuously stirring until the mesoporous material is completely dissolved, and stirring at room temperature for 6 hours to obtain a polyamic acid hybridization solution; and (2) defoaming the polyamic acid hybridization solution in vacuum, uniformly coating the polyamic acid hybridization solution on a glass substrate, treating the coated substrate at 60 ℃, 150 ℃, 200 ℃, 280 ℃ and 350 ℃ for 30min, naturally cooling to room temperature, taking out, placing the substrate in water for demoulding, and finally placing the substrate in a drying oven at 100 ℃ for drying and removing water to obtain the low-dielectric and low-loss polyimide film, wherein the thickness of the film is controlled to be 50 mu m.
Example 5
A preparation method of a polyimide film with low dielectric and low loss comprises the following steps:
s1, adding 0.5g of SBA-15 molecular sieve into 100mL of ethanol water solution (volume fraction of 70%) for uniform dispersion, adding 4.0mL of ammonia water (25%), 1.5mL of ethyl orthosilicate and 0.8mL of 3-aminopropyltriethoxysilane, stirring for reaction for 12 hours, and performing vacuum drying at 80 ℃ to obtain solid powder; washing the solid powder with ethanol and water for 2 times in sequence, and drying in vacuum at 60 ℃ to obtain a mesoporous material with amino modified surface;
s2, adding 0.5g of mesoporous material with surface amino modified into 40mL of N, N-dimethylacetamide under the atmosphere of nitrogen, adding 15mmol of 4, 4' -diaminodiphenyl ether, stirring until the mesoporous material is completely dissolved, adding 15mmol of 3, 3', 4, 4' -biphenyltetracarboxylic dianhydride, continuously stirring until the mesoporous material is completely dissolved, and stirring at room temperature for 6 hours to obtain a polyamic acid hybridization solution; and (2) defoaming the polyamic acid hybridization solution in vacuum, uniformly coating the polyamic acid hybridization solution on a glass substrate, treating the coated substrate at 60 ℃, 150 ℃, 200 ℃, 280 ℃ and 350 ℃ for 30min, naturally cooling to room temperature, taking out, placing the substrate in water for demoulding, and finally placing the substrate in a drying oven at 100 ℃ for drying and removing water to obtain the low-dielectric and low-loss polyimide film, wherein the thickness of the film is controlled to be 50 mu m.
Example 6
A preparation method of a polyimide film with low dielectric and low loss comprises the following steps:
s1, dissolving 0.3g of decylamine in 10mL of absolute ethyl alcohol, heating to 60 ℃, adding 1.0g of SBA-15 molecular sieve, stirring for reacting for 2 hours, filtering, and drying to obtain the SBA-15 molecular sieve with organic amine adsorbed in the pore channel; adding the SBA-15 molecular sieve adsorbing organic amine in the pore channel of 0.5g into 100mL of ethanol aqueous solution (volume fraction is 70 percent) for uniform dispersion, adding 4.0mL of ammonia water (25 percent), 1.5mL of ethyl orthosilicate and 0.8mL of 3-aminopropyltriethoxysilane, stirring for reaction for 12 hours, and performing vacuum drying at 80 ℃ to obtain solid powder; adding the solid powder into 100mL of ethanol water solution (volume fraction 95%) dissolved with 0.2g of ammonium nitrate, stirring for 2h at 60 ℃, filtering, washing for 2 times by using ethanol and water in sequence, and drying in vacuum at 60 ℃ to obtain a mesoporous material with amino modified surface;
s2, adding 0.5g of mesoporous material with surface amino modified into 40mL of N, N-dimethylacetamide under the atmosphere of nitrogen, adding 15mmol of 4, 4' -diaminodiphenyl ether, stirring until the mesoporous material is completely dissolved, adding 15mmol of 3, 3', 4, 4' -biphenyltetracarboxylic dianhydride, continuously stirring until the mesoporous material is completely dissolved, and stirring at room temperature for 6 hours to obtain a polyamic acid hybridization solution; and (2) defoaming the polyamic acid hybridization solution in vacuum, uniformly coating the polyamic acid hybridization solution on a glass substrate, treating the coated substrate at 60 ℃, 150 ℃, 200 ℃, 280 ℃ and 350 ℃ for 30min, naturally cooling to room temperature, taking out, placing the substrate in water for demoulding, and finally placing the substrate in a drying oven at 100 ℃ for drying and removing water to obtain the low-dielectric and low-loss polyimide film, wherein the thickness of the film is controlled to be 50 mu m.
Comparative example 1
A method for preparing a polyimide film, comprising:
adding 0.5g of MCM-41 molecular sieve into 40mL of N, N-dimethylacetamide under the atmosphere of nitrogen, adding 15mmol of 4, 4' -diaminodiphenyl ether, stirring until the solution is completely dissolved, adding 15mmol of 3, 3', 4, 4' -biphenyltetracarboxylic dianhydride, continuously stirring until the solution is completely dissolved, and stirring at room temperature for reaction for 6 hours to obtain a polyamic acid hybrid solution; and (2) defoaming the polyamic acid hybrid solution in vacuum, uniformly coating the polyamic acid hybrid solution on a glass substrate, treating the coated substrate at 60 ℃, 150 ℃, 200 ℃, 280 ℃ and 350 ℃ for 30min, naturally cooling to room temperature, taking out, placing the substrate in water for demoulding, and finally placing the substrate in a drying oven at 100 ℃ for drying and removing water to obtain the polyimide film, wherein the thickness of the film is controlled to be 50 microns.
Comparative example 2
A preparation method of a polyimide film comprises the following steps:
s1, adding 0.5g MCM-41 molecular sieve into 100mL ethanol water solution (volume fraction is 70%), uniformly dispersing, adding 0.8mL 3-aminopropyltriethoxysilane, stirring for reaction for 12h, and vacuum drying at 80 ℃ to obtain solid powder; washing the solid powder with ethanol and water for 2 times in sequence, and drying in vacuum at 60 ℃ to obtain a modified mesoporous material;
s2, adding 0.5g of modified mesoporous material into 40mL of N, N-dimethylacetamide under the atmosphere of nitrogen, adding 15mmol of 4, 4' -diaminodiphenyl ether, stirring until the modified mesoporous material is completely dissolved, adding 15mmol of 3, 3', 4, 4' -biphenyltetracarboxylic dianhydride, continuously stirring until the modified mesoporous material is completely dissolved, and stirring at room temperature for reaction for 6 hours to obtain a polyamic acid hybrid solution; and (2) defoaming the polyamic acid hybrid solution in vacuum, uniformly coating the polyamic acid hybrid solution on a glass substrate, treating the coated substrate at 60 ℃, 150 ℃, 200 ℃, 280 ℃ and 350 ℃ for 30min, naturally cooling to room temperature, taking out, placing the substrate in water for demoulding, and finally placing the substrate in a drying oven at 100 ℃ for drying and removing water to obtain the polyimide film, wherein the thickness of the film is controlled to be 50 microns.
The polyimide films obtained in examples 1 to 6 and comparative examples 1 to 2 were subjected to the performance tests shown in the following methods, and the results are shown in Table 1.
Dielectric constant: and (3) testing the dielectric spectrum of the film by adopting an Agilent 4294A type precise impedance analyzer, and calculating to obtain the dielectric constant with the frequency of 1 MHz.
TABLE 1 Performance test results of polyimide films obtained in examples and comparative examples
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (10)
1. A preparation method of a polyimide film with low dielectric and low loss is characterized by comprising the following steps:
s1, reacting the mesoporous molecular sieve with tetraethoxysilane, an amino silane coupling agent containing ammonia and ammonia water to obtain a mesoporous material with the surface modified by amino;
s2, carrying out polycondensation reaction on the mesoporous material with the surface amino modified, diamine and dianhydride monomers, and then carrying out thermal imidization and film formation to obtain the low-dielectric and low-loss polyimide film.
2. The method of claim 1, wherein the mesoporous molecular sieve is mixed with organic amine to adsorb organic amine in the pores before step S1.
3. The method for preparing a low dielectric, low loss polyimide film according to any of claims 1-2, wherein said mesoporous molecular sieve is at least one of MCM, KIT, SBA or FDU molecular sieves.
4. The method of claim 2, wherein the organic amine is an aliphatic amine having 10 to 20 carbon atoms, preferably decylamine or hexadecylamine.
5. The method for preparing a low dielectric and low loss polyimide film according to any one of claims 1 to 4, wherein the amino silane coupling agent is at least one of 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyldiethoxymethylsilane, 3- (3-aminopropylamino) propyltrimethoxysilane and 3- (3-aminopropylamino) propyltriethoxysilane.
6. The method for preparing a low dielectric and low loss polyimide film according to any one of claims 1 to 5, wherein the mass-to-volume ratio of the mesoporous molecular sieve to the tetraethoxysilane and the aminosilane-containing coupling agent is 1g:2-4mL:1-2 mL.
7. The method for preparing a low dielectric and low loss polyimide film according to any one of claims 2 to 6, wherein the mass ratio of the mesoporous molecular sieve to the organic amine is 1: 0.1-0.4.
8. The method for preparing a low dielectric, low loss polyimide film according to any one of claims 1 to 7, wherein the diamine monomer is at least one of 4, 4 '-diaminodiphenyl ether, 4' -diaminodiphenyl sulfide, 4 '-diaminodiphenyl methane or 4, 4' -diaminodiphenyl sulfone;
the tetracarboxylic dianhydride monomer is at least one of 3, 3', 4, 4' -biphenyl tetracarboxylic dianhydride, 3', 4, 4' -diphenyl ether tetracarboxylic dianhydride, 3', 4, 4' -benzophenone tetracarboxylic dianhydride or 3, 3', 4, 4' -diphenyl sulfone tetracarboxylic dianhydride.
9. The method for preparing a low dielectric and low loss polyimide film according to any one of claims 1 to 8, wherein the mass ratio of the mesoporous molecular sieve to the diamine monomer is 1:2 to 30.
10. A low dielectric and low loss polyimide film prepared by the method of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011372180.8A CN112480407B (en) | 2020-11-30 | 2020-11-30 | Polyimide film with low dielectric and low loss and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011372180.8A CN112480407B (en) | 2020-11-30 | 2020-11-30 | Polyimide film with low dielectric and low loss and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112480407A true CN112480407A (en) | 2021-03-12 |
| CN112480407B CN112480407B (en) | 2023-07-04 |
Family
ID=74937188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011372180.8A Active CN112480407B (en) | 2020-11-30 | 2020-11-30 | Polyimide film with low dielectric and low loss and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112480407B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113235225A (en) * | 2021-04-14 | 2021-08-10 | 清华大学深圳国际研究生院 | Substrate material and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1760244A (en) * | 2004-10-13 | 2006-04-19 | 中国科学院理化技术研究所 | Hybrid film of polyimide of modified by silicon dioxide tube and preparation method thereof |
| CN101560299A (en) * | 2008-04-15 | 2009-10-21 | 东丽纤维研究所（中国）有限公司 | Low-dielectric-constant polyimide/mesoporous molecular sieve hybrid material and preparation method thereof |
| CN109627470A (en) * | 2018-11-09 | 2019-04-16 | 株洲时代新材料科技股份有限公司 | A kind of preparation method of low dielectric Kapton |
| CN111393646A (en) * | 2020-04-30 | 2020-07-10 | 上海国瓷新材料技术有限公司 | Low-dielectric and low-loss polyimide composite material, and preparation method and application thereof |
| CN111635525A (en) * | 2020-07-03 | 2020-09-08 | 浙江中科玖源新材料有限公司 | Low-dielectric-constant hydrophobic polyimide film and preparation method thereof |
-
2020
- 2020-11-30 CN CN202011372180.8A patent/CN112480407B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1760244A (en) * | 2004-10-13 | 2006-04-19 | 中国科学院理化技术研究所 | Hybrid film of polyimide of modified by silicon dioxide tube and preparation method thereof |
| CN101560299A (en) * | 2008-04-15 | 2009-10-21 | 东丽纤维研究所（中国）有限公司 | Low-dielectric-constant polyimide/mesoporous molecular sieve hybrid material and preparation method thereof |
| CN109627470A (en) * | 2018-11-09 | 2019-04-16 | 株洲时代新材料科技股份有限公司 | A kind of preparation method of low dielectric Kapton |
| CN111393646A (en) * | 2020-04-30 | 2020-07-10 | 上海国瓷新材料技术有限公司 | Low-dielectric and low-loss polyimide composite material, and preparation method and application thereof |
| CN111635525A (en) * | 2020-07-03 | 2020-09-08 | 浙江中科玖源新材料有限公司 | Low-dielectric-constant hydrophobic polyimide film and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113235225A (en) * | 2021-04-14 | 2021-08-10 | 清华大学深圳国际研究生院 | Substrate material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112480407B (en) | 2023-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1792928B1 (en) | Multibranched polyimide hybrid material | |
| CN109942851B (en) | Low-dielectric-constant polyimide hybrid film and application | |
| EP3444020B1 (en) | Method for manufacturing gas separation membrane | |
| CN110982103A (en) | Preparation method of low dielectric polyimide film | |
| CN112679770B (en) | Low-dielectric-constant polyimide film and preparation method thereof | |
| CN104910409A (en) | Preparation method of porous low-dielectric polyimide thin films | |
| CN111253601A (en) | High-temperature heat-conducting polyimide film with stable size and preparation method thereof | |
| CN112480407B (en) | Polyimide film with low dielectric and low loss and preparation method thereof | |
| CN112646179B (en) | Low-dielectric polyimide film and preparation method thereof | |
| TWI818990B (en) | Gas separation membrane manufacturing method | |
| CN112646372B (en) | Polyimide film with low dielectric constant and application thereof | |
| CN113667158A (en) | Low-dielectric polyimide-based composite film and preparation method and application thereof | |
| Peng et al. | Fabrication of low dielectric constant fluorinated poly (arylene ether nitrile) composites by cross-linking with metal-organic frameworks | |
| CN114349962A (en) | Low-dielectric-constant polyimide film and preparation method thereof | |
| Sun et al. | All‐Organic Hyper‐Crosslinked Polymer/Polyimide Composite Films with Ultralow High‐Frequency Dielectric Constant | |
| CN110387041B (en) | Polyimide composite film and preparation method thereof | |
| Chen et al. | Imparting low dielectric constant and high toughness to polyimide via physical blending with trifluoropropyl polyhedral oligomeric silsesquioxane | |
| CN114940760A (en) | Polyimide film and preparation method and application thereof | |
| CN115044204A (en) | Preparation method of low-dielectric all-organic crosslinked polyimide film | |
| CN114699928A (en) | Mixed matrix membrane preparation method based on in-situ polymerization | |
| CN111393646A (en) | Low-dielectric and low-loss polyimide composite material, and preparation method and application thereof | |
| Huang et al. | Preparation and characterization of polyimide/pure silica zeolite hybrid films | |
| CN117430949B (en) | Polyimide film with high heat conduction and low thermal expansion coefficient and preparation method thereof | |
| CN117018896B (en) | Polyimide mixed matrix film and preparation method and application thereof | |
| CN115181268B (en) | Photosensitive polyimide, preparation method thereof and photosensitive polyimide composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |