CN112468190A - Wireless near field communication host system of implantable medical device - Google Patents
Wireless near field communication host system of implantable medical device Download PDFInfo
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- CN112468190A CN112468190A CN202011622011.5A CN202011622011A CN112468190A CN 112468190 A CN112468190 A CN 112468190A CN 202011622011 A CN202011622011 A CN 202011622011A CN 112468190 A CN112468190 A CN 112468190A
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- 238000004891 communication Methods 0.000 title claims abstract description 99
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- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 230000009977 dual effect Effects 0.000 claims description 4
- 238000004804 winding Methods 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 5
- 230000002035 prolonged effect Effects 0.000 abstract description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000000747 cardiac effect Effects 0.000 description 1
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- H04B5/72—
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/372—Arrangements in connection with the implantation of stimulators
- A61N1/37211—Means for communicating with stimulators
- A61N1/37217—Means for communicating with stimulators characterised by the communication link, e.g. acoustic or tactile
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/372—Arrangements in connection with the implantation of stimulators
- A61N1/37211—Means for communicating with stimulators
- A61N1/37217—Means for communicating with stimulators characterised by the communication link, e.g. acoustic or tactile
- A61N1/37223—Circuits for electromagnetic coupling
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- H04B5/24—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention relates to the technical field of near-field communication equipment, in particular to a wireless near-field communication host system of an implanted medical instrument, which comprises a host chip, wherein the input end of the host chip is connected with a master control single chip microcomputer, the output end of the host chip 1 is connected with a high-speed double-MOSFET full-bridge arm driver module, the host chip is also connected with a small-signal instrument amplifier module, and the high-speed double-MOSFET full-bridge arm driver module and the small-signal instrument amplifier module are both connected with a communication module. The sending power of the near field communication host system is improved, and the communication distance is increased. The communication power consumption of the near field communication slave system is reduced and the service life is prolonged by charging the capacitor at the slave end; the receiving sensitivity of the near field communication host system is improved, the response power requirement of signals at the slave end is reduced, the volume of slave equipment is reduced, and the near field communication host system is suitable for occasions where batteries are difficult to replace; the reliability and the communication rate of the near field communication system are improved; the communication distance of the near field communication system is increased.
Description
Technical Field
The invention relates to the technical field of near field communication equipment, in particular to a wireless near field communication host system of an implantable medical device.
Background
In the prior art, a communication host generally adopts a singlechip to control a single bridge arm Mos tube to drive a wound coil, and transmits a 125KHZ carrier signal to a slave machine in a PPM (pulse position modulation) mode. And if receiving, carrying out hardware comparison on the amplitude of the carrier signal on the winding coil through a comparator to form a square wave signal, and decoding the carrier through a singlechip timer and a counter. The slave responds to the master in the same way by PPM (pulse position modulation). Therefore, the sending driving power of the communication host is smaller, so that the amplitude peak value of the carrier is lower, and the communication distance is shorter.
In the prior art, the communication host adopts the comparator to process the waveform, so that the receiving sensitivity is low, and small signals cannot be received. The slave machine end must adopt larger response power, the communication power consumption of the slave machine end system is higher, the standby service life of the slave machine end system is reduced, and the volume of the slave machine equipment antenna is larger.
In the prior art, most communication hosts are designed by adopting discrete components, hardware filtering processing of information is lost, and capturing and analyzing of carriers are performed by a master control single chip microcomputer, so that single chip microcomputer resources are occupied, the real-time performance and the communication rate of the whole system are reduced, interference is easily caused, and the communication reliability is general.
In the technical field of low-speed communication of in-vivo implantable medical equipment, the defects limit the service life of a communication system, limit the distance and the precision of communication and influence the use experience of patients.
Disclosure of Invention
In order to overcome the defects of the existing near field communication host, the invention provides a wireless near field communication host system of an implantable medical device. The host system has high sensitivity and high output power, and is suitable for the fields of implantable medical equipment, IC card communication, industrial communication and the like which need to use near field communication.
The technical scheme adopted by the invention for solving the technical problems is as follows: the utility model provides an embedded medical instrument wireless near field communication host system, contains the host computer chip, the input of host computer chip links to each other with the master control singlechip, 1 output of host computer chip links to each other with high-speed two MOSFET full bridge arm driver modules, the host computer chip still is connected with small signal instrumentation amplifier module, high-speed two MOSFET full bridge arm driver modules, small signal instrumentation amplifier module all link to each other with communication module.
According to another embodiment of the present invention, the host chip is integrated with a band-pass filter module, a limiter module, a digital demodulator module, a pre-amplifier module, a carrier control driver module, a frequency divider carrier frequency control module, a logic control module, and an interface module.
According to another embodiment of the invention, further comprising a DCDC boost module connected to the high-speed double MOSFET full bridge arm driver module. The supplied supply voltage is further increased by a Boost voltage circuit within the DCDC Boost module.
According to another embodiment of the invention, a resistance-capacitance filtering module is further connected between the high-speed double-MOSFET full bridge arm driver module and the communication module.
According to another embodiment of the invention, the small signal instrumentation amplifier module is powered by a negative voltage generation module. The negative voltage generating module generates a supply voltage of + -5v to supply power for the small-signal instrument amplifier module.
According to another embodiment of the present invention, the communication module further comprises a resonance capacitor and a wound coil connected to each other. And the receiving and the transmitting of signals are realized through the resonance capacitor and the wound coil.
According to another embodiment of the present invention, it is further included that a crystal oscillator is further connected to the host chip. The crystal oscillator provides a clock signal for the host chip, so that the logic clock operation and the carrier signal generation of the host chip are realized.
The invention has the beneficial effects that:
1. the transmitting power of the near field communication host system is improved, and the communication distance is increased. And the capacitor at the slave end is charged, so that the communication power consumption of the near field communication slave system is reduced, and the service life of power consumption sensitive equipment such as an implanted medical instrument is prolonged.
2. The receiving sensitivity of the near field communication host system is improved, the response power requirement of signals at the slave end is reduced, the volume of slave equipment is reduced, and the near field communication host system is suitable for occasions where batteries are difficult to replace.
3. The reliability of the near field communication system is improved.
4. The communication speed of the near field communication system is improved.
5. The communication distance of the near field communication system is increased.
6. The near field communication host system is suitable for application of various near field communication host systems, including internal implanted medical equipment, IC card communication, industrial communication and the like.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a schematic diagram of the communication between the present invention and a communication slave.
In the figure, the device comprises a host chip 1, a host chip 1-1, a band-pass filter module 1-2, a limiter module 1-3, a digital demodulator module 1-4, a pre-amplification module 1-5, a carrier control driving module 1-6, a frequency divider carrier frequency control module 1-7, a logic control module 1-8, an interface module 2, a main control single chip microcomputer 3, a high-speed double MOSFET full bridge arm driver module 4, a small signal instrument amplifier module 5, a communication module 5-1, a resonant capacitor 5-2, a winding coil 6, a DCDC boosting module 7, a resistance-capacitance filtering module 8, a negative pressure generation module 9 and a crystal oscillator.
Detailed Description
As shown in fig. 1 to 2, which are schematic structural diagrams of the present invention, an implantable medical device wireless near-field communication host system comprises a host chip 1, wherein an input end of the host chip 1 is connected to a master control single chip 2, an output end of the host chip 1 is connected to a high-speed double MOSFET full-bridge arm driver module 3, the host chip 1 is further connected to a small signal instrument amplifier module 4, and the high-speed double MOSFET full-bridge arm driver module 3 and the small signal instrument amplifier module 4 are both connected to a communication module 5.
The communication host is internally provided with a host chip 1 and is matched with a high-speed double-MOSFET full-bridge arm driver module 3 and a small-signal instrument amplifier module 4 to fully filter, amplify, shape and decode carrier signals. For receiving the response signal, the host chip 1 transmits NRZ encoded (non-return-to-zero code) response data of the communication slave to the master control single chip microcomputer 2. The master control singlechip 2 sends PPM (pulse position modulation) signals to control the host chip 1 to send high-amplitude carrier signals. According to the method, CRC (cyclic redundancy check) and a perfect transmission protocol are embedded in a communication protocol stack. The resource occupation of the master control singlechip 2 is obviously reduced, the real-time performance of the whole system is improved, the communication speed is improved, and the reliability of the near field communication system is improved.
Aiming at the technical problem that the communication host has smaller driving power in the prior art, a high-speed double-MOSFET full bridge arm driver module 3 is added behind the output end of a host chip 1, the module has the current driving capability of + -4A, and the highest power supply voltage can reach 15 v. Because the full-bridge Mos tube is adopted for driving, the peak value of the carrier amplitude of the power supply can reach at least 2 times of that of the existing scheme under the same power supply voltage. The carrier peak voltage formula of the present application is: vpp = Vs × 2 × Q, Vpp being the peak voltage, Vs the supply voltage, and Q the inductance quality factor for the case of 134.2hz of the communication coil. Therefore, under the conditions that the Q value of the common inductor is 25 and Vs =12v, the peak voltage of the carrier wave can reach 600v, the amplitude is large, communication energy can be stably provided for the communication slave machine (the energy storage requirement in the communication process can be met), so that the communication power consumption of the slave machine end is reduced, the carrier wave is more easily captured by the slave machine due to the large peak voltage of the coil end, and the distance of near field communication is effectively increased.
Aiming at the technical problems that the communication system has low receiving sensitivity and cannot receive small signals in the prior art, the small signal instrument amplifier module 4 is added in front of the receiving end of the host chip 1, so that full-wave distortion-free amplification of the small signals is realized. The small-signal instrumentation amplifier module 4 performs 50 times of full-phase amplification on the received micro-carrier signal and transmits the signal to the host chip 1. The host chip 1 analyzes and pre-amplifies signals larger than 1mv, then performs filtering processing on the signals to separate out useful signals, and then converts analog sine wave signals into digital signals, thereby being convenient for outputting the signals. Therefore, a small signal can be received, and there is an advantage that the reception sensitivity is high.
According to another embodiment of the invention, the host chip 1 is further integrated with a band-pass filter module 1-1, a limiter module 1-2, a digital demodulator module 1-3, a pre-stage amplification module 1-4, a carrier control driving module 1-5, a frequency divider carrier frequency control module 1-6, a logic control module 1-7 and an interface module 1-8.
The band-pass filter module 1-1 is responsible for amplifying and filtering signals, and specifically, the host chip 1 includes the band-pass filter module 1-1, and can amplify and filter signals without external elements, wherein the low cut-off frequency is about 65KHZ, and the high cut-off frequency is 260 KHZ.
The amplitude limiter module 1-2 is responsible for limiting the amplitude of the output signal within a certain range, and the amplitude limiter module 1-2 converts the analog sine wave signal into a digital signal. Hysteresis is provided according to the minimum amplitude of the input signal and the duty cycle of the digital output signal is between 40% and 60%. Both the band-pass filter module 1-1 and the limiter module 1-2 together have a high gain of 1000 times.
The digital demodulator modules 1-3 are responsible for FSK frequency encoding and parsing. Specifically, the digital demodulator module 1-3 performs frequency coding according to the high-order and low-order sequences of the input signal, measures the frequency of the input signal by counting the oscillation clock within a period of time of the input signal, is specified as a wide tolerance at the high-order and low-order frequencies, the digital demodulator module 1-3 is designed to distinguish the high-order and low-order frequencies by an offset between the two frequencies rather than an absolute value, a threshold between the high-order and low-order frequencies is defined to be 6.5kHz lower than the measured low-order frequency and to have a hysteresis of ± 0.55kHz, and transmits the resolved signal to the master single chip microcomputer 2. After the data stream detected by the input stage of the digital demodulator module 1-3 is demodulated, the data stream is cached according to bytes and then is sent to the main control single chip microcomputer 2 through serial coding.
The pre-stage amplification module 1-4 is responsible for preventing signals from being large. Specifically, the pre-amplifier module 1-4, i.e., the pre-amplifier operational amplifier, has a fixed internal reference voltage and a voltage gain of up to 5 times defined by an external resistor, and the pre-amplifier module 1-4 has a high gain-bandwidth product of at least 2 MHz.
The carrier control driver modules 1-5 are responsible for generating the carrier signals. Specifically, it drives the host chip 1 internally to generate a carrier signal using the carrier frequency generated by the frequency divider carrier frequency control block 1-6.
The divider carrier frequency control block 1-6 is responsible for generating the carrier frequency. Specifically, the frequency divider carrier frequency control block 1-6 is a programmable frequency divider that can generate a carrier frequency for the carrier control drive block 1-5 by frequency dividing the crystal oscillator.
The logic control modules 1-7 are responsible for controlling the timing, status and logic analysis of the overall operation of the host chip 1. The module can be controlled by a main control singlechip 2 through serial input so as to change the configuration and control the frequency divider carrier frequency control modules 1-6. This module implements a mode control register that can be written to by the master control singlechip 2.
The interface modules 1-8 provide interfaces for communication interaction between the host chip 1 and the master control singlechip 2. The interface modules 1-8 comprise a PPM control interface and an asynchronous communication interface, the PPM control interface is suitable for communication of PPM pulse signals, and the asynchronous communication interface is suitable for communication of asynchronous serial NRZ codes.
According to another embodiment of the present invention, it further comprises a DCDC boost module 6 connected to the high-speed dual MOSFET full bridge arm driver module 3. The supplied supply voltage is further increased by a Boost circuit within the DCDC Boost module 6. Specifically, the peak voltage of the present application can be further increased as the voltage of the DCDC boost module 6 increases, and the peak carrier amplitude can reach the level of 4-5 times that of the existing scheme.
According to another embodiment of the present invention, further comprising a resistance-capacitance filtering module 7 connected between the high-speed dual MOSFET full bridge arm driver module 3 and the communication module 5.
The resistance-capacitance filtering module 7 is responsible for reducing interference and further improving the stability of the system. In particular, the communication module 5 is driven by the push-pull output stage of the high-speed dual MOSFET full bridge arm driver module 3, which can be seen as harmonic interference due to fast digital switching. To minimize this interference, the RC filter module 7 provides a low pass RC filter feeding the communication module 5, which further improves the stability of the system when the communication module 5 is long-wired.
According to another embodiment of the present invention, it further comprises that the small signal instrumentation amplifier module 4 is powered by a negative voltage generation module 8. The negative voltage generating module 8 generates a supply voltage of + -5v to supply power for the small-signal instrument amplifier module 4.
According to another embodiment of the present invention, it further comprises that the communication module 5 comprises a resonance capacitor 5-1 and a winding coil 5-2 connected with each other. The receiving and the transmitting of the signals are realized through the resonance capacitor 5-1 and the wound coil 5-2. Preferably, the resonance capacitor 5-1 is an NPO high-voltage-withstanding high-frequency capacitor, so that the loss of capacitance parameters at high temperature and high frequency is small, and the communication effect of the system is further improved.
According to another embodiment of the present invention, it is further included that a crystal oscillator 9 is further connected to the host chip 1. The crystal oscillator 9 provides a clock signal to the host chip 1, thereby realizing logic clock operation and carrier signal generation of the host chip 1.
The communication host is suitable for communicating with the slave machines of the internal implanted medical equipment, and comprises a cardiac pacemaker, a defibrillator, a nerve stimulator, an implanted medicine pump and the like. The communication host has high driving power and can charge the energy storage capacitor of the implanted communication slave machine, thereby providing communication energy for the communication slave machine and greatly prolonging the service life of the near field communication system. The communication host is sensitive, real-time and accurate, communication speed and communication distance are improved, and reliability of a near field communication system is improved.
The foregoing description is intended to be illustrative rather than limiting, and it will be appreciated by those skilled in the art that many modifications, variations or equivalents may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (7)
1. The utility model provides an embedded medical instrument wireless near field communication host system, contains host computer chip (1), characterized by, the input of host computer chip (1) links to each other with master control singlechip (2), host computer chip (1) output links to each other with high-speed two MOSFET full bridge arm driver module (3), host computer chip (1) still is connected with small signal instrument amplifier module (4), high-speed two MOSFET full bridge arm driver module (3), small signal instrument amplifier module (4) all link to each other with communication module (5).
2. The wireless near-field communication host system of the implantable medical device as claimed in claim 1, wherein the host chip (1) is integrated with a band-pass filter module (1-1), a limiter module (1-2), a digital demodulator module (1-3), a pre-amplifier module (1-4), a carrier control driver module (1-5), a divider carrier frequency control module (1-6), a logic control module (1-7) and an interface module (1-8).
3. The wireless near-field communication host system of the implantable medical device as claimed in claim 1, wherein the high-speed dual MOSFET full bridge arm driver module (3) is further connected with a DCDC boost module (6).
4. The wireless near-field communication host system of the implantable medical device as claimed in claim 1, wherein a resistance-capacitance filtering module (7) is further connected between the high-speed double-MOSFET full bridge arm driver module (3) and the communication module (5).
5. The wireless near-field communication host system of implantable medical devices according to claim 1, wherein the small signal instrumentation amplifier module (4) is powered by the negative pressure generation module (8).
6. The host system of claim 1, wherein the communication module (5) comprises a resonant capacitor (5-1) and a winding coil (5-2) connected with each other.
7. The wireless near-field communication host system of implantable medical devices according to claim 1, wherein the host chip (1) is further connected with a crystal oscillator (9).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011622011.5A CN112468190A (en) | 2020-12-31 | 2020-12-31 | Wireless near field communication host system of implantable medical device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011622011.5A CN112468190A (en) | 2020-12-31 | 2020-12-31 | Wireless near field communication host system of implantable medical device |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19512754A1 (en) * | 1995-04-05 | 1996-10-10 | Thomson Brandt Gmbh | Power amplifier e.g. for audio and television signals |
| CN102179003A (en) * | 2011-04-26 | 2011-09-14 | 深圳市锘特达科技发展有限公司 | Implantable medical device |
| CN102284136A (en) * | 2011-05-11 | 2011-12-21 | 深圳市锘特达科技发展有限公司 | In-vitro program-controlled device for implantable medical appliance |
| US20170189697A1 (en) * | 2016-01-06 | 2017-07-06 | Syntilla Medical LLC | Charging system providing adjustable transmitted power to improve power efficiency within an implanted device |
| CN107769812A (en) * | 2017-10-31 | 2018-03-06 | 乐普医学电子仪器股份有限公司 | A kind of wireless telecommunication system for implantable medical devices |
| CN213960066U (en) * | 2020-12-31 | 2021-08-13 | 常州瑞神安医疗器械有限公司 | Wireless near field communication host system of implantable medical device |
-
2020
- 2020-12-31 CN CN202011622011.5A patent/CN112468190A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19512754A1 (en) * | 1995-04-05 | 1996-10-10 | Thomson Brandt Gmbh | Power amplifier e.g. for audio and television signals |
| CN102179003A (en) * | 2011-04-26 | 2011-09-14 | 深圳市锘特达科技发展有限公司 | Implantable medical device |
| CN102284136A (en) * | 2011-05-11 | 2011-12-21 | 深圳市锘特达科技发展有限公司 | In-vitro program-controlled device for implantable medical appliance |
| US20170189697A1 (en) * | 2016-01-06 | 2017-07-06 | Syntilla Medical LLC | Charging system providing adjustable transmitted power to improve power efficiency within an implanted device |
| CN107769812A (en) * | 2017-10-31 | 2018-03-06 | 乐普医学电子仪器股份有限公司 | A kind of wireless telecommunication system for implantable medical devices |
| CN213960066U (en) * | 2020-12-31 | 2021-08-13 | 常州瑞神安医疗器械有限公司 | Wireless near field communication host system of implantable medical device |
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