Disclosure of Invention
The invention aims to solve the technical problem of providing a dual-power redundant power supply low-side anti-reflection circuit of an automobile electronic product, which can meet the functional safety requirement and reduce the system cost of a controller.
The technical scheme adopted by the invention for solving the technical problems is as follows: the double-power redundant power supply low-side anti-reflection circuit of the automobile electronic product comprises a first power module, a second power module, a redundant power module and a low-side anti-reflection module, wherein the first power module is connected with a first load module and is also connected with the second load module through the redundant power module; the second power supply module is connected with the second load module, and the second power supply module is also connected with the first load module through the redundant power supply module; the control end of the low-side anti-reflection module is connected with the first power supply module and the second power supply module, the input end of the low-side anti-reflection module is connected with the grounding ends of the first load module and the second load module, and the output end of the low-side anti-reflection module is connected with the grounding end of the power supply of the whole vehicle; the redundant power supply module is activated when the first power supply module or the second power supply module fails.
The first power supply module comprises a first power supply, a first power supply protection circuit and a first power supply MOS tube switch circuit; the input of first power is connected whole car power, and the output is connected first power protection circuit's input, first power protection circuit's output is connected through first power detection end first power MOS pipe switch circuit's input, load module MOS pipe switch circuit's input is connected through fourth power detection end to first power MOS pipe switch circuit's output, first load module is connected to load module MOS pipe switch circuit's output.
And a first power supply filter circuit is also arranged between the output end of the first power supply protection circuit and the first power supply detection end.
The first power supply detection end is also connected with the logic unit through a first power supply logic anti-reverse circuit.
The second power supply module comprises a second power supply, a second power supply protection circuit and a second power supply MOS tube switching circuit; the input end of the second power supply is connected with the whole vehicle storage battery, the output end of the second power supply is connected with the input end of the second power supply protection circuit, the output end of the second power supply protection circuit is connected with the input end of the second power supply MOS tube switching circuit through the second power supply detection end, and the output end of the second power supply MOS tube switching circuit is connected with the second load module through the third power supply detection end.
And a second power supply filter circuit is also arranged between the output end of the second power supply protection circuit and the second power supply detection end.
And the second power supply detection end is also connected with the logic unit through a second power supply logic anti-reverse circuit.
The redundancy power supply module comprises a redundancy MOS tube switch circuit and a redundancy MOS tube anti-reverse circuit, and the output end of the first power supply is connected with the output end of the second power supply through the redundancy MOS tube switch circuit and the redundancy MOS tube anti-reverse circuit.
The redundancy MOS tube switching circuit and the redundancy MOS tube anti-reverse circuit are two NMOSFETs, the source levels of the two NMOSFETs are connected with the source level, the grid electrodes of the two NMOSFETs are connected with a driving signal, the two drain levels of the two NMOSFETs are respectively connected with the output end of the first power supply and the output end of the second power supply, and a redundancy MOS tube protection circuit is further connected between the two source electrodes.
The low-side anti-reflection module is a low-side anti-reflection MOS tube switch circuit, the low-side anti-reflection MOS tube switch circuit is an NMOSFET, a source electrode of the low-side anti-reflection MOS tube switch circuit is connected with grounding ends of the first load module and the second load module, a drain electrode of the low-side anti-reflection MOS tube switch circuit is connected with the grounding end of the whole vehicle power supply, and a grid electrode of the low-side anti-reflection MOS tube switch circuit is connected with the first power supply module and.
Advantageous effects
Due to the adoption of the technical scheme, compared with the prior art, the invention has the following advantages and positive effects: the power supply system uses two power supplies for power supply, and the two power supplies are electrically isolated, so that the power supply independence between the load modules is effectively ensured, the mutual influence caused by failure between different load modules is reduced, and meanwhile, the two power supplies supply power, when one power supply fails, the system can still work through a redundant power supply, so that the reliability and the functional safety level of the system are improved; meanwhile, the low-side anti-reflection circuit design is adopted, and compared with a high-side anti-reflection circuit, the use quantity of MOS (metal oxide semiconductor) tubes is reduced, and the system cost of the controller is effectively reduced.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
The embodiment of the invention relates to a dual-power redundant power supply low-side anti-reflection circuit of an automobile electronic product, which comprises a first power module, a second power module, a redundant power module and a low-side anti-reflection module, wherein the first power module is connected with a first load module and is also connected with the second load module through the redundant power module; the second power supply module is connected with the second load module, and the second power supply module is also connected with the first load module through the redundant power supply module; the control end of the low-side anti-reflection module is connected with the first power supply module and the second power supply module, the input end of the low-side anti-reflection module is connected with the grounding ends of the first load module and the second load module, and the output end of the low-side anti-reflection module is connected with the grounding end of the power supply of the whole vehicle; the redundant power supply module is activated when the first power supply module or the second power supply module fails.
As shown in fig. 2, the first power module in this embodiment includes a first power supply KL30_1, a first power protection circuit F1, and a first power MOS transistor switch circuit Q1. The second power supply module comprises a second power supply KL30_2, a second power supply protection circuit F2 and a second power supply MOS transistor switching circuit Q2. The redundant power supply module comprises a redundant MOS tube switch circuit Q5 and a redundant MOS tube anti-reverse circuit Q6. The low-side anti-reverse module is a low-side anti-reverse MOS tube switching circuit Q3.
The input end of the first power supply KL30_1 is connected with a whole vehicle storage battery, the output end of the first power supply KL30_1 is connected with the input end of the first power supply protection circuit F1, the output end of the first power supply protection circuit F1 is connected with the input end of the first power supply MOS tube switching circuit Q1 through the first power supply filter circuit C1 and the first power supply detection end Signal 1, the output end of the first power supply MOS tube switching circuit Q1 is connected with the input end of the load module MOS tube switching circuit Q7 through the first power supply MOS tube protection circuit D4 and the fourth power supply detection end Signal 4, and the output end of the load module MOS tube switching circuit Q7 is connected with the load module 1.
The input end of a second power supply KL30_2 is connected with a whole vehicle storage battery, the output end of the second power supply KL30_2 is connected with the input end of a second power supply protection circuit F2, the output end of the second power supply protection circuit F2 is connected with the input end of a second power supply MOS tube switching circuit Q2 through a second power supply filter circuit C2 and a second power supply detection end Signal 2, and the output end of the second power supply MOS tube switching circuit Q2 is connected with a load module 2 through a second power supply MOS tube protection circuit D3 and a third power supply detection end Signal 3.
The output end of the first power supply protection circuit is connected with the logic unit through a first power supply logic anti-reverse circuit D1, and the output end of the second power supply protection circuit is connected with the logic unit through a second power supply logic anti-reverse circuit D2, so that a logic unit redundant power supply mode is realized.
The first power supply MOS tube switching circuit Q1 and the second power supply MOS tube switching circuit Q2 are controlled by a high-side driving signal of an intelligent brake system ASIC chip. The output end of the first power supply MOS tube switching circuit Q1 is connected with the output end of the second power supply MOS tube switching circuit Q2 through a redundant MOS tube switching circuit Q5 and a redundant MOS tube anti-reverse circuit Q6, and dual-power redundancy switching power supply is achieved.
The low-side anti-reverse MOS tube switch circuit Q3 is controlled by a first power supply KL30_1 and a second power supply KL30_2 in an on-off mode, the input end of the low-side anti-reverse MOS tube switch circuit Q3 is connected with the grounding ends of units such as a logic unit and a load module, and the output end of the low-side anti-reverse MOS tube switch circuit Q3 is connected with the grounding end of a storage battery of the whole vehicle, so that the low-side anti-.
The first power supply KL30_1 and the second power supply KL30_2 are both connected to a vehicle storage battery and are connected out by different vehicle wire harnesses. The first power supply protection circuit F1 and the second power supply protection circuit F2 are both composed of fuses, the input end of the first power supply protection circuit F1 is connected with a first power supply KL30_1, and the output end of the first power supply protection circuit F1 is connected with the input end of a first power supply MOS tube switch circuit Q1 and the input end of a first power supply logic anti-reversion circuit D1 through a first power supply filter circuit C1; the input end of the second power supply protection circuit F2 is connected with a second power supply KL30_2, and the output end of the second power supply protection circuit F2 is connected with the input end of a second power supply MOS tube switching circuit Q2 and the input end of a second power supply logic anti-reverse circuit D2 through a second power supply filter circuit C2.
The first power filter circuit C1 and the second power filter circuit C2 are both capacitor filter circuits, which mainly filter out high-frequency interference and low-frequency interference of the power line, and the filter capacitors can be a combination design of differential mode capacitors and common mode capacitors.
The first power supply logic anti-reverse circuit D1 and the second power supply logic anti-reverse circuit D2 are anti-reverse diodes, the output end of the anti-reverse diode is connected to the system logic unit to supply power for the system logic module, and the power supply voltage is provided by a high-voltage unit in the first power supply or the second power supply.
The first power supply detection end Signal 1, the second power supply detection end Signal 2, the third power supply detection end Signal 3 and the fourth power supply detection end Signal 4 are all connected with an ADC (analog to digital converter) sampling circuit, the voltage division ratio and the resistance parameter selection of the ADC sampling circuit are determined by a specific system, and the working states of the first power supply and the second power supply are judged through the collected power supply voltage.
The first power supply MOS tube switching circuit Q1 is an NMOSFET, the drain electrode is connected with the input of a power supply, the source electrode is connected with the output of the power supply, the grid electrode is connected with an ASIC driving signal, the switching circuit Q1 is a high-side switch, the amplitude requirement of the ASIC driving signal is high, the grid source voltage of the NMOSFET can be broken down by the driving signal with high amplitude, an electronic device is damaged, the MOS tube protection circuit D4 is a clamp diode, and the clamp voltage is lower than the maximum differential voltage of the grid source of the MOS tube; the first resistor R1 is a current-limiting resistor, the first end of the resistor R1 is connected with an ASIC driving signal, and the second end of the resistor R1 is connected with the grid electrode of the MOS tube; the fourth resistor R4 is connected to the gate and the source of the MOS transistor, respectively.
The second power supply MOS tube switching circuit Q2 is an NMOSFET, the drain electrode is connected with the input of a power supply, the source electrode is connected with the output of the power supply, the grid electrode is connected with an ASIC driving signal, the switching circuit Q2 is a high-side switch, the amplitude requirement of the ASIC driving signal is high, the grid source voltage of the NMOSFET can be broken down by the driving signal with high amplitude, an electronic device is damaged, the MOS tube protection circuit D3 is a clamp diode, and the clamp voltage is lower than the maximum differential voltage of the grid source of the MOS tube; the second resistor R2 is a current-limiting resistor, the first end of the second resistor R2 is connected with an ASIC driving signal, and the second end of the second resistor R2 is connected with the grid electrode of the MOS tube; the third resistor R3 is connected to the gate and the source of the MOS transistor, respectively.
The redundancy MOS tube switch circuit Q5 and the redundancy MOS tube anti-reflection circuit Q6 are two NMOSFETs, the source electrodes of the two NMOSFETs are connected with the source electrodes, the two drain electrodes are respectively connected with the outputs of two paths of power supplies, the grid electrode is connected with an ASIC driving signal, the redundancy MOS tube switch circuit Q5 and the redundancy MOS tube anti-reflection circuit Q6 are high-side switches, the ASIC driving signal amplitude is high, the driving signal with high amplitude can cause the breakdown of the gate source voltage of the NMOSFETs and damage electronic devices, the MOS tube protection circuit D5 is a clamp diode, and the clamp voltage is lower than the maximum differential voltage of the gate source of the MOS tube; the fifth resistor R5 is a current-limiting resistor, the first end of the fifth resistor R5 is connected with an ASIC driving signal, and the second end of the fifth resistor R5 is connected with the grid electrode of the MOS tube; the sixth resistor R6 is connected to the gate and the source of the MOS transistor, respectively.
The low-side anti-reverse MOS tube switching circuit Q3 is an NMOSFET, the source electrode of the low-side anti-reverse MOS tube switching circuit Q3 is connected with the grounding ends of a logic unit, a load module and other units, the drain electrode of the low-side anti-reverse MOS tube switching circuit is connected with the grounding end of a storage battery of the whole vehicle, the grid electrode of the low-side anti-reverse MOS tube switching circuit is connected with a KL30_2 loop of a second power supply through a current-limiting resistor R7, and meanwhile, the grid electrode of the low-side anti-reverse MOS tube switching circuit D6 is connected with a KL30_1 loop of a first power supply through a current-limiting resistor R8, as an NMOSFET driving signal is; the seventh resistor R7 is a current-limiting resistor, the first end of the seventh resistor R7 is connected with the output end of the second power supply low-side anti-reverse MOS tube driving signal anti-reverse circuit D7, and the second end of the seventh resistor R7 is connected with the grid electrode of the MOS tube; the eighth resistor R8 is a current-limiting resistor, the first end of the eighth resistor R8 is connected with the output end of the first power supply low-side anti-reflection MOS tube driving signal anti-reflection circuit D8, and the second end of the eighth resistor R8 is connected with the grid electrode of the MOS tube.
The load module in this embodiment may be a motor, a solenoid valve coil, or other high-power devices, and when the system normally operates, the detection circuit detects effective voltages of the first power supply KL30-1 and the second power supply KL30-2, as shown in fig. 3, the first power supply KL30_1 supplies power to the first load module, the second power supply KL30_2 supplies power to the second load module, the redundant MOS transistor switch circuit Q5 and the redundant MOS transistor anti-reflection circuit Q6 are in an off state, the load modules supply power independently, and the intelligent brake system logic unit supplies power to the high-voltage unit in the first power supply or the second power supply.
When the system detects that the first power supply KL30-1 is lost or the second power supply KL30-2 is lost in the working process, as shown in fig. 4 and 5, according to a system diagnosis strategy, the redundant MOS transistor switch circuit Q5 and the redundant MOS transistor anti-reflection circuit Q6 are turned on, so that the redundant MOS transistor switch circuit Q5 and the redundant MOS transistor anti-reflection circuit Q6 are in a conducting state, and the normal power supply supplies power to the first load module, the second load module, the logic unit and other modules at the same time; under the failure mode, the MCU needs to detect two paths of power supply voltages in real time, and judges the working state of the system according to the detected power supply voltage value.