CN112447763A - Display panel and display - Google Patents
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- CN112447763A CN112447763A CN201910838662.9A CN201910838662A CN112447763A CN 112447763 A CN112447763 A CN 112447763A CN 201910838662 A CN201910838662 A CN 201910838662A CN 112447763 A CN112447763 A CN 112447763A
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- 238000010168 coupling process Methods 0.000 claims abstract description 39
- 238000005859 coupling reaction Methods 0.000 claims abstract description 39
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- 239000006087 Silane Coupling Agent Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229910004205 SiNX Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 18
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a display panel, comprising: a metal electrode; the passivation layer is arranged on the metal electrode, and a through hole penetrating through the passivation layer to the metal electrode is formed in the passivation layer; a coupling layer disposed over the passivation layer and the metal electrode exposed through the via hole; and the transparent electrode layer is arranged on the coupling layer. According to the invention, the coupling layers are added among the metal electrode, the passivation layer and the transparent electrode layer, so that bonding is generated among the coupling layers, the metal electrode, the passivation layer and the transparent electrode layer, and the adhesive force among the metal electrode, the transparent electrode layer and the passivation layer is increased, thereby effectively solving the problem of loose passivation layer caused by low-temperature processing, improving the effect of the passivation layer on blocking water and oxygen, preventing the threshold voltage of the thin film transistor from generating negative drift, and improving the display effect.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a display panel and a display.
Background
With the development of information technology, the demand for display devices has rapidly increased. In order to meet such a demand, Display devices typified by Liquid Crystal Displays (LCDs), Plasma Displays (PDPs), and Organic Light Emitting Displays (OLEDs) have been rapidly developed.
Organic light emitting display devices have characteristics of self-luminescence, high brightness, wide viewing angle, high contrast, flexibility, low power consumption, etc., and thus have attracted much attention as a new generation of display mode, and have begun to gradually replace conventional liquid crystal display devices, and are widely used in the fields of mobile phone screens, computer monitors, full-color televisions, etc. Unlike the conventional liquid crystal display, the organic electroluminescent device directly provides a very thin organic material coating on a glass substrate without a backlight, and the organic material coating emits light when a current flows therethrough. In order to realize full Color of the OLED display, there are three technologies, which are a three primary Color light Emitting method, a Color Filter (CF) method and a Color conversion method, respectively, and the currently mainly pushed technology of the large-sized OLED display in the market is White Organic Light Emitting Diode (WOLED) in combination with a conventional Color Filter, the principle of the Color Filter is to make a light Emitting layer emit White light, and then the White light is converted into r (red) light, g (green) light and b (blue) light by using the Color Filter, so as to realize full Color display.
However, in order to protect a fragile active layer in a thin film transistor in an organic light emitting display device, after the thin film transistor is manufactured, a passivation layer is manufactured at a low temperature to protect the active layer of the thin film transistor, and the passivation layer formed at the low temperature affects a water and oxygen blocking effect, thereby affecting a display effect.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a display panel and a display. The technical problem to be solved by the invention is realized by the following technical scheme:
a display panel, comprising:
a metal electrode;
the passivation layer is arranged on the metal electrode, and a through hole penetrating through the passivation layer to the metal electrode is formed in the passivation layer;
a coupling layer disposed over the passivation layer and the metal electrode exposed through the via hole;
and the transparent electrode layer is arranged on the coupling layer.
In one embodiment of the invention, the metal electrode comprises a source electrode and/or a drain electrode.
In one embodiment of the invention, the material of the passivation layer comprises SiNxAnd/or SiOx。
In one embodiment of the present invention, the coupling layer includes a silane coupling agent.
In one embodiment of the present invention, the transparent electrode layer includes an ITO electrode layer.
In one embodiment of the present invention, the device further comprises an active layer disposed under the metal electrode and the passivation layer.
In one embodiment of the invention, the material of the active layer comprises IGZO.
In one embodiment of the invention, the device further comprises a substrate, a gate electrode and a gate insulating layer, wherein the gate electrode and the gate insulating layer are sequentially arranged between the substrate and the active layer.
In one embodiment of the present invention, the material of the gate insulating layer includes SiO2。
An embodiment of the present invention further provides a display including the display panel according to any one of the above embodiments.
The invention has the beneficial effects that:
according to the invention, the coupling layers are added among the metal electrode, the passivation layer and the transparent electrode layer, so that bonding is generated among the coupling layers, the metal electrode, the passivation layer and the transparent electrode layer, and the adhesive force among the metal electrode, the transparent electrode layer and the passivation layer is increased, thereby effectively solving the problem of loose passivation layer caused by low-temperature processing, improving the effect of the passivation layer on blocking water and oxygen, preventing the threshold voltage of the thin film transistor from generating negative drift, and improving the display effect.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the formula of a silane coupling agent according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention.
Description of reference numerals:
a metal electrode-101; a passivation layer-102; a via-103; coupling layer-104; a transparent electrode layer-105; an active layer-106; a gate insulating layer-107; a gate-108; a substrate-109.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Thin Film Transistors (TFTs) are one of the key components in the present flat panel display devices, and have a very important role in the operation performance of the display devices. A thin film transistor is one of the field effect transistor types, and its core structure mainly includes various thin films deposited on a substrate, such as an Active Layer (Active Layer) providing an electron transport channel, a dielectric Layer, and a metal electrode Layer. Wherein the active layer (IGZO) cannot be processed at high temperature after activation because oxygen vacancies are generated to make the IGZO conductive. At present, in order to protect the active layer, after the thin film transistor is manufactured, a passivation layer is manufactured at a low temperature, the passivation layer is generally manufactured by a low-temperature manufacturing process at 200-220 ℃, due to the limitation of the low-temperature manufacturing process, the passivation layer is loose, the passivation layer is generally made of an inorganic thin film material, and due to the fact that the inorganic thin film material does not have ductility, the effect of the passivation layer on blocking water and oxygen is poor, so that the problem of negative drift of the threshold voltage of the thin film transistor is caused, the negative drift of the threshold voltage can cause the thin film transistor to be invalid, and the display effect is finally influenced. In addition, the through hole penetrating through the passivation layer is generally prepared by a dry etching method, and the dry etching method is easy to form a sawtooth structure, so that the surface of the passivation layer is rough, and then the problem of poor adhesion between the transparent electrode layer formed in the through hole and the passivation layer is caused, so that the transparent electrode layer is easy to peel off from the passivation layer.
For the above reasons, the present embodiment provides a display panel, please refer to fig. 1, and fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention, where the display panel includes a metal electrode 101, a passivation layer 102, a coupling layer 104 and a transparent electrode layer 105, where the passivation layer 102 is disposed on the metal electrode, a via hole 103 penetrating through the passivation layer 102 to the metal electrode 101 is disposed on the passivation layer 102, the coupling layer 104 is disposed on the passivation layer 102 and the metal electrode 101 exposed through the via hole 103, and the transparent electrode layer 105 is disposed on the coupling layer 104.
Specifically, the coupling layer 104 of the present embodiment may be a structure having bifunctional groups, and the coupling layer 104 may form a "molecular bridge" between interfaces of an inorganic substance and an organic substance, and connect two materials with different properties together, so as to enhance the adhesive strength between the structures on both sides of the coupling layer 104, so that the coupling layer 104 of the present embodiment is disposed between the passivation layer 102 and the transparent electrode layer 105, so that the coupling layer 104 of the present embodiment not only can generate hydrogen bonds or chemical bonds with the passivation layer 102, but also can generate hydrogen bonds or chemical bonds with the transparent electrode layer 105, and form a "molecular bridge" between the passivation layer 102 and the transparent electrode layer 105 through the coupling layer 104, thereby enhancing the adhesion between the passivation layer 102 and the transparent electrode layer 105, and in addition, the coupling layer 104 can fill up the microporous structure on the surface of the passivation layer 102, therefore, the adhesive force between the passivation layer 102 and the transparent electrode layer 105 is further enhanced, the problem that the passivation layer 102 is limited in material selection when meeting the requirements of a low-temperature process and the capability of blocking water and oxygen is effectively solved, the problem that the passivation layer 102 is loose due to the low-temperature process is avoided, the passivation layer 102 can effectively play a role in blocking external water and oxygen, the problem that the threshold voltage of the thin film transistor generates a negative drift phenomenon is solved, and the display effect of the display panel is improved.
In addition, in the present embodiment, a coupling layer is disposed between the passivation layer 102 and the metal electrode 101 exposed through the via hole 103, so that the coupling layer 104 of the present embodiment can generate a hydrogen bond or a chemical bond with the metal electrode 101, and meanwhile, the coupling layer 104 can also generate a hydrogen bond or a chemical bond with the transparent electrode layer 105, thereby enhancing an adhesion between the metal electrode 101 and the transparent electrode layer 105, so that the metal electrode 101 and the transparent electrode layer 105 can be tightly connected, thereby avoiding a problem that the transparent electrode layer 105 is easily separated from the metal electrode 101, and further ensuring a display effect of the display panel.
In addition, other structures of the display panel of this embodiment belong to the common general knowledge in the art, and the preparation and the position thereof are the same as the conventional manner in the art, so the description of this embodiment is omitted for other structures.
Example two
In order to better explain the display panel of the first embodiment, the present embodiment specifically explains a specific structure of the display panel on the basis of the above embodiments.
Currently, the passivation layer is generally formed by a Deposition method (e.g., Chemical Vapor Deposition (CVD)), and the Deposition process of the passivation layer must be performed at a relatively low temperature because the TFT substrate cannot withstand a high annealing temperature. Therefore, in order to solve the problem of poor water and oxygen blocking effect of the passivation layer caused by the low temperature process, referring to fig. 2, the coupling layer 104 is selected as a silane coupling agent (Y-R-si (or))3) And Y-R-is marked as X, siloxy in the silane coupling agent can be decomposed into silanol hydroxyl when meeting water, a-X group in the silane coupling agent forms a-OH group after the action of oxygen plasma, the formed group and an inorganic interface are subjected to hydrogen bonding adsorption, and then the inorganic material is dried, so that dehydration condensation reaction can be carried out, and a firm chemical bond is formed.
Referring to fig. 1, after the via hole 103 is formed on the passivation layer 102 by a dry etching process, a silane coupling agent may be coated on the passivation layer 102 by a spraying process, and then the transparent conductive layer 105 is deposited on the silane coupling agent, where the silane coupling agent reacts with the metal electrode 101, the passivation layer 102, and the transparent conductive layer 105, so that a "molecular bridge" is formed between the interfaces of the metal electrode 101 and the transparent conductive layer 105 and between the interfaces of the passivation layer 102 and the transparent conductive layer 105 by the silane coupling agent to connect the metal electrode 101 and the transparent conductive layer 105, and the passivation layer 102 and the transparent conductive layer 105 together, thereby enhancing the adhesion between the metal electrode 101 and the transparent conductive layer 105, and between the passivation layer 102 and the transparent conductive layer 105. In the embodiment, the adhesion between the passivation layer 102 and the transparent conductive layer 105 is enhanced by the silane coupling agent, and meanwhile, the microporous structure on the surface of the passivation layer 102 is filled by the silane coupling agent, so that the problem of looseness of the passivation layer 102 caused by a low-temperature process is solved, the passivation layer 102 can effectively play a role in blocking external water and oxygen, the problem of negative drift phenomenon caused by the threshold voltage of the thin film transistor is solved, and the display effect of the display panel is improved. In addition, in the embodiment, the adhesion between the metal electrode 101 and the transparent conductive layer 105 is enhanced by the silane coupling agent, so that the problem that the transparent electrode layer 105 is easy to fall off from the passivation layer 102 is avoided, and the display effect of the display panel is further ensured.
Further, in the silane coupling agent of the present embodiment, the siloxy group is decomposed to form silanol hydroxyl group when it contacts water, the X group of the silane coupling agent forms OH group by the action of oxygen plasma, and it is adsorbed to the inorganic interface with hydrogen bonding property, and then the inorganic material is dried to generate dehydration condensation reaction, thereby forming a strong chemical bond.
Further, the thickness of the silane coupling agent in this embodiment may be 1nm to 10nm, because if the thickness of the silane coupling agent is less than 1nm, the adhesion between the metal electrode 101 and the transparent conductive layer 105, and the adhesion between the passivation layer 102 and the transparent conductive layer 105 cannot be enhanced, and the passivation layer 102 cannot have an effect of blocking external water and oxygen, and if the thickness of the silane coupling agent is greater than 10nm, the silane coupling agent may have a risk of cracking of the material, and thus the adhesion between the metal electrode 101 and the transparent conductive layer 105, and the adhesion between the passivation layer 102 and the transparent conductive layer 105 cannot be enhanced, and meanwhile, if the silane coupling agent is too thick, the preparation cost may be increased.
Further, the metal electrode 101 of the present embodiment includes a source electrode and/or a drain electrode. The source electrode is an electrode for collecting current, and the drain electrode is an electrode for emitting. In the embodiment, a layer of silane coupling agent is added between the source electrode and the transparent electrode layer and between the drain electrode and the transparent electrode layer, so that the adhesive force between the source electrode and the transparent electrode layer and the adhesive force between the drain electrode and the transparent electrode layer are enhanced, and the problem that the transparent electrode layer is easy to peel off from the source electrode and the drain electrode is avoided.
Further, the material of the passivation layer 102 of the present embodiment may include SiN, for examplexAnd/or SiOx。SiNxAnd SiOxH can be effectively prevented from diffusing to the active layer, thereby playing a role in protection. In addition, silane coupling agents can be reacted with SiNxAnd SiOxForm firm chemical bond between the two and effectively fill in SiNxAnd SiOxThe micro-porous structure of the surface enables the passivation layer 102 to satisfy both the low temperature process and the water and oxygen blocking capability.
Further, the transparent electrode layer includes an ITO (indium Tin Oxide) electrode layer. The ITO electrode layer is the most commonly used material for flat panel displays because of its good visible light transmittance and conductivity, high mechanical strength and chemical stability, and it has excellent hole injection ability at the same time, and thus is used for a transparent electrode of an organic electroluminescent device. Therefore, the adhesion between the ITO electrode and the source and drain electrodes affects the final display effect, and if the adhesion between the ITO electrode and the source and drain electrodes is too small, the ITO electrode is easily peeled off.
In addition, referring to fig. 3, the display panel of the present embodiment further includes an active layer 106 for providing an electron transport channel. Further, the material of the active layer includes IGZO (Indium Gallium Zinc Oxide). A common TFT driving classification mainly includes a-Si TFTs (amorphous silicon), but at present, when a display panel with a resolution of Full high Definition (Full HD, for example, resolution of 1920 × 1080P) or even Ultra high Definition (for example, resolution of 4 k) is provided, the a-Si TFTs have a problem of high power consumption, and the IGZO is used as a material of an active layer, so that the power consumption of the display panel can be reduced.
Referring to fig. 3 again, the display panel of the present embodiment further includes a substrate 109, a gate electrode 108, and a gate insulating layer 107, and the gate electrode 108 and the gate insulating layer 107 are sequentially disposed between the substrate 109 and the active layer 106.
Further, the substrate 109 may be made of a semiconductor material such as glass or quartz, or an organic polymer.
In the field effect transistor, a voltage applied to a gate electrode acts on an active layer through a gate insulating layer, thereby controlling on and off of a drain current. Therefore, a gate insulating layer material for an organic field effect transistor is required to have excellent insulating properties and electrical breakdown strength when formed as a thin film. Therefore, the material of the gate insulating layer 107 is generally an inorganic material, such as silicon dioxide, silicon nitride, or aluminum oxide, which is excellent in terms of excellent electrical characteristics and stable properties, and preferably, the material of the gate insulating layer is silicon dioxide, which has the characteristics of low refractive index, strong thin film layer, strong protective capability, and small light absorption, and thus is very suitable as a gate insulating dielectric of an oxide semiconductor device. The method for preparing silicon dioxide may be a thermal growth method, a magnetron sputtering method, a PECVD (Plasma Enhanced Chemical Vapor Deposition) method, etc., and the Plasma method is often used because it is suitable for a large substrate, has good uniformity, and has a simple process.
In addition, other structures of the display panel of this embodiment belong to the common general knowledge in the art, and the preparation and the position thereof are the same as the conventional manner in the art, so the description of this embodiment is omitted for other structures.
EXAMPLE III
The embodiment of the invention also provides a display, which is an OLED display, and the OLED display comprises the display panel in the embodiment. The display may be, for example: any product or component with a display function, such as an LTPO display device, a Micro LED display device, electronic paper, an OLED panel, an AMOLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and the like.
Specifically, referring to fig. 3 again, the display panel of the present embodiment may specifically include a metal electrode 101, a passivation layer 102, a coupling layer 104, a transparent electrode layer 105, an active layer 106, a substrate 109, a gate electrode 108, and a gate insulating layer 107, wherein the passivation layer 102 is disposed on the metal electrode, a via hole 103 penetrating through the passivation layer 102 to the metal electrode 101 is disposed on the passivation layer 102, the coupling layer 104 is disposed on the passivation layer 102 and the metal electrode 101 exposed through the via hole 103, the transparent electrode layer 105 is disposed on the coupling layer 104, the active layer 106 is disposed below the metal electrode 101 and the passivation layer 102, and the gate electrode 108 and the gate insulating layer 107 are sequentially disposed between the substrate 109 and the active layer 106.
In the embodiment, the coupling layer 104 is arranged between the passivation layer 102 and the transparent electrode layer 105, so that the coupling layer 104 of the embodiment can generate a hydrogen bond or a chemical bond with the passivation layer 102, and meanwhile, the coupling layer 104 can also generate a hydrogen bond or a chemical bond with the transparent electrode layer 105, thereby enhancing the adhesion between the passivation layer 102 and the transparent electrode layer 105, and in addition, the coupling layer 104 can also fill up the microporous structure on the surface of the passivation layer 102, thereby further enhancing the adhesion between the passivation layer 102 and the transparent electrode layer 105, avoiding the problem of looseness of the passivation layer 102 caused by a low-temperature process, so that the passivation layer 102 can effectively play a role in blocking external water and oxygen, thereby improving the problem that the threshold voltage of the thin film transistor generates a negative drift phenomenon, and improving the display effect of the display panel.
Further, the present embodiment selects the coupling layer 104 as a silane coupling agent (Y-R-Si (OR))3) The silane coupling agent is used for erecting a 'molecular bridge' between the interfaces of the metal electrode 101 and the transparent conductive layer 105 and between the interfaces of the passivation layer 102 and the transparent conductive layer 105, so as to connect the metal electrode 101 and the transparent conductive layer 105 and connect the passivation layer 102 and the transparent conductive layer 105 together, thereby enhancing the metal electrode 101 and the transparent conductive layer 105And the adhesion among the transparent conductive layer 105, the passivation layer 102 and the transparent conductive layer 105. In the embodiment, the adhesion between the passivation layer 102 and the transparent conductive layer 105 is enhanced by the silane coupling agent, and meanwhile, the microporous structure on the surface of the passivation layer 102 is filled by the silane coupling agent, so that the problem of looseness of the passivation layer 102 caused by a low-temperature process is solved, the passivation layer 102 can effectively play a role in blocking external water and oxygen, the problem of negative drift phenomenon caused by the threshold voltage of the thin film transistor is solved, and the display effect of the display panel is improved. In addition, in the embodiment, the adhesion between the metal electrode 101 and the transparent conductive layer 105 is enhanced by the silane coupling agent, so that the problem that the transparent electrode layer 105 is easy to fall off from the passivation layer 102 is avoided, and the display effect of the display panel is further ensured.
Further, the metal electrode 101 of the present embodiment includes a source electrode and/or a drain electrode. In the embodiment, a layer of silane coupling agent is added between the source electrode and the transparent electrode layer and between the drain electrode and the transparent electrode layer, so that the adhesive force between the source electrode and the transparent electrode layer and the adhesive force between the drain electrode and the transparent electrode layer are enhanced, and the problem that the transparent electrode layer is easy to peel off from the source electrode and the drain electrode is avoided.
Further, the material of the passivation layer 102 of the present embodiment may include SiN, for examplexAnd/or SiOx. The silane coupling agent can be reacted with SiNxAnd SiOxForm firm chemical bond between the two and effectively fill in SiNxAnd SiOxThe micro-porous structure of the surface enables the passivation layer 102 to satisfy both the low temperature process and the water and oxygen blocking capability.
Further, the transparent electrode layer includes an ITO (indium Tin Oxide) electrode layer. In order to enhance the adhesion between the ITO electrode and the source electrode and the drain electrode, a layer of silane coupling agent is added between the ITO electrode and the source electrode and between the ITO electrode and the drain electrode, so that the adhesion between the ITO electrode and the source electrode and the drain electrode is enhanced due to the silane coupling agent, and the problem that the ITO electrode is easy to peel off is avoided.
The display panel provided in the embodiment of the present invention has the similar implementation principle and technical effect as those of the display panel provided in the above embodiments, and is not described herein again.
It should be noted that other structures of the display of this embodiment belong to the common general knowledge in the art, and the preparation and the location thereof are the same as the conventional manner in the art, so the description of this embodiment is not repeated for other structures.
Example four
The embodiment of the invention also provides another display, which is a liquid crystal display, belongs to a low-power-consumption product, and can completely avoid heating (main power consumption and heating parts exist in a backlight tube or an LED), while a CRT display can inevitably generate high temperature due to a developing technology; the body of the liquid crystal display is thin, the space is saved, and compared with the heavier CRT display, the liquid crystal display only needs one third of the space; liquid crystal displays radiate much less than CRT displays, which is a boon to people working in front of computers all day long; the liquid crystal display picture can not flicker, the damage of the display to the eyes can be reduced, and the eyes are not easy to fatigue. Therefore, liquid crystal displays are increasingly used, for example, displays can be used for: any product or component with a display function, such as an LTPO display device, a Micro LED display device, a liquid crystal panel, electronic paper, an OLED panel, an AMOLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and the like.
The liquid crystal display provided by the embodiment comprises: a liquid crystal display panel and a backlight module.
In one embodiment, the backlight module is used for providing light source for the liquid crystal display panel by the incident light emitted by the backlight module to the liquid crystal display panel. Specifically, the backlight module may include a light source, a light guide element, and an optical film, wherein light projected from the light source forms a surface light source through the light guide element, and then the brightness of the light is increased through the optical film, and finally the image is displayed on the liquid crystal display panel. The light source, the light guide element and the optical film are usually assembled in the frame structure, and the edges of the light source, the light guide element and the optical film are attached by an adhesive tape.
Referring to fig. 3 again, the liquid crystal display panel of the present embodiment may specifically include a metal electrode 101, a passivation layer 102, a coupling layer 104, a transparent electrode layer 105, an active layer 106, a substrate 109, a gate 108, and a gate insulating layer 107, wherein the passivation layer 102 is disposed on the metal electrode, a via 103 penetrating through the passivation layer 102 to the metal electrode 101 is disposed on the passivation layer 102, the coupling layer 104 is disposed on the passivation layer 102 and the metal electrode 101 exposed through the via 103, the transparent electrode layer 105 is disposed on the coupling layer 104, the active layer 106 is disposed under the metal electrode 101 and the passivation layer 102, and the gate 108 and the gate insulating layer 107 are sequentially disposed between the substrate 109 and the active layer 106.
Further, the present embodiment selects the coupling layer 104 as a silane coupling agent (Y-R-Si (OR))3) The silane coupling agent enhances adhesion between the metal electrode 101 and the transparent conductive layer 105, and between the passivation layer 102 and the transparent conductive layer 105. In this embodiment, the silane coupling agent is used to fill up the microporous structure on the surface of the passivation layer 102, so that the passivation layer 102 can effectively block external water and oxygen, and the silane coupling agent is used to enhance the adhesion between the metal electrode 101 and the transparent conductive layer 105.
Further, the metal electrode 101 of the present embodiment includes a source electrode and/or a drain electrode. In the embodiment, a layer of silane coupling agent is added between the source electrode and the transparent electrode layer and between the drain electrode and the transparent electrode layer, so that the adhesive force between the source electrode and the transparent electrode layer and the adhesive force between the drain electrode and the transparent electrode layer are enhanced, and the problem that the transparent electrode layer is easy to peel off from the source electrode and the drain electrode is avoided.
Further, the material of the passivation layer 102 of the present embodiment may include SiN, for examplexAnd/or SiOx。
Further, the transparent electrode layer includes an ITO electrode layer.
The display panel provided in the embodiment of the present invention has the similar implementation principle and technical effect to those of the display panel described in the above embodiments, and is not described herein again.
It should be noted that other structures of the display of this embodiment belong to the common general knowledge in the art, and the preparation and the location thereof are the same as the conventional manner in the art, so the description of this embodiment is not repeated for other structures.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A display panel, comprising:
a metal electrode;
the passivation layer is arranged on the metal electrode, and a through hole penetrating through the passivation layer to the metal electrode is formed in the passivation layer;
a coupling layer disposed over the passivation layer and the metal electrode exposed through the via hole;
and the transparent electrode layer is arranged on the coupling layer.
2. The display panel according to claim 1, wherein the metal electrode comprises a source electrode and/or a drain electrode.
3. The display panel of claim 1, wherein the material of the passivation layer comprises SiNxAnd/or SiOx。
4. The display panel of claim 1, wherein the coupling layer comprises a silane coupling agent.
5. The display panel according to claim 1, wherein the transparent electrode layer comprises an ITO electrode layer.
6. The display panel of claim 1, further comprising an active layer disposed under the metal electrode and the passivation layer.
7. The display panel according to claim 6, wherein the material of the active layer comprises IGZO.
8. The display panel according to claim 6, further comprising a substrate, a gate electrode, and a gate insulating layer, wherein the gate electrode and the gate insulating layer are sequentially disposed between the substrate and the active layer.
9. The display panel according to claim 8, wherein a material of the gate insulating layer comprises SiO2。
10. A display comprising the display panel according to any one of claims 1 to 9.
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| CN201910838662.9A CN112447763A (en) | 2019-09-05 | 2019-09-05 | Display panel and display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113838974A (en) * | 2021-09-24 | 2021-12-24 | 长江先进存储产业创新中心有限责任公司 | Phase change memory and preparation method thereof |
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