CN112447578A - Electrostatic suction head, manufacturing method thereof and method for transferring Micro LED - Google Patents
Electrostatic suction head, manufacturing method thereof and method for transferring Micro LED Download PDFInfo
- Publication number
- CN112447578A CN112447578A CN202011372649.8A CN202011372649A CN112447578A CN 112447578 A CN112447578 A CN 112447578A CN 202011372649 A CN202011372649 A CN 202011372649A CN 112447578 A CN112447578 A CN 112447578A
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- Prior art keywords
- layer
- memory alloy
- suction head
- micro led
- electrostatic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
Abstract
The invention provides an electrostatic suction head and a manufacturing method thereof, and a method for transferring a Micro LED (light emitting diode). The buffer layer of the electrostatic suction head protects the electrode layer of the electrostatic suction head and the Micro LED, and the memory alloy layer made of the recoverable telescopic material can compensate a gap value caused by warping of the temporary storage substrate, poor film uniformity and the like, so that the electrostatic force is improved, and the transfer yield is increased.
Description
Technical Field
The invention relates to the technical field of Micro LEDs, in particular to an electrostatic suction head, a manufacturing method of the electrostatic suction head and a method for transferring the Micro LEDs.
Background
Micro LEDs are widely paid attention to as inorganic luminescent materials having advantages of high luminous efficiency, long service life and high reliability, and in order to manufacture a full-color display, R, G, B Micro LEDs of three colors need to be picked up from respective growth substrates and then placed on a driving back plate, and external force needs to be applied when the Micro LEDs are picked up, and the common force includes electrostatic adsorption force, viscous adsorption force, magnetic adsorption force, vacuum adsorption force and the like.
The LEDs have uniformity problems in the manufacturing process and may have different heights, so that some lower LEDs are difficult to absorb and the yield is low in the absorption process of the electrostatic absorption head
Disclosure of Invention
The invention aims to provide an electrostatic suction head providing electrostatic force and increasing transfer yield, a manufacturing method thereof and a method for transferring Micro LED.
The invention provides a method for manufacturing an electrostatic suction head, which comprises the following steps:
s1: depositing a memory alloy material layer on a glass substrate, and patterning the memory alloy material layer to form memory alloy layers arranged in an array;
s2: manufacturing a patterned buffer layer on the memory alloy layer;
s3: manufacturing a patterned electrode layer on the buffer layer;
s4: the chemical deposition method forms a dielectric material layer, and then forms a patterned dielectric layer through dry etching.
Further, the memory alloy layer of step S1 is formed by lift-off.
Further, the material of the buffer layer in step S2 is organic resin or hydrophobic organic silicon material.
Further, the material of the electrode layer in step S3 is platinum or gold.
Further, the dielectric material layer of step S4 is silicon nitride.
The invention also provides an electrostatic sucker which is characterized by comprising a memory alloy layer, a buffer layer, an electrode layer and a dielectric layer which are positioned on the glass substrate and arranged in an array, wherein the buffer layer, the electrode layer and the dielectric layer are sequentially positioned on the memory alloy layer.
The invention also provides a Micro LED transferring method which is characterized by comprising the following steps:
s1: aligning and attaching a dielectric layer of the electrostatic suction head with a Micro LED to be transferred on the temporary storage substrate;
s2: heating the electrostatic suction head, and stretching the memory alloy layer to enable the electrode layer to pick up the Micro LED through the dielectric layer;
s3: maintaining the temperature of the electrostatic suction head, transferring the Micro LED onto a bonding electrode on the back plate substrate by the electrostatic suction head, and bonding the Micro LED and the bonding electrode;
s4: the electrostatic suction head releases the Micro LED to the back plate substrate;
s5: the electrostatic chuck is removed.
The buffer layer of the electrostatic suction head protects the electrode layer of the electrostatic suction head and the Micro LED, and the memory alloy layer made of the recoverable telescopic material can compensate a gap value caused by warping of the temporary storage substrate, poor film uniformity and the like, so that the electrostatic force is improved, and the transfer yield is increased.
Drawings
FIGS. 1-4 are schematic illustrations of steps in the manufacture of an electrostatic chuck in accordance with the present invention;
FIGS. 5 and 6 are schematic diagrams of the Micro LED transfer method of the present invention.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention, which is to be given the full breadth of the appended claims and any and all equivalent modifications thereof which may occur to those skilled in the art upon reading the present specification.
For the sake of simplicity, the drawings only schematically show the parts relevant to the present invention, and they do not represent the actual structure as a product. In addition, in order to make the drawings concise and understandable, components having the same structure or function in some of the drawings are only schematically illustrated or only labeled. In this document, "one" means not only "only one" but also a case of "more than one".
The invention discloses a method for manufacturing an electrostatic suction head, which comprises the following steps:
s1: as shown in fig. 1, a memory alloy material layer is deposited on a glass substrate 10, and is patterned to form memory alloy layers 20 arranged in an array;
wherein the memory alloy layer 20 is formed by a lift-off process.
S2: as shown in fig. 2, a patterned buffer layer 30 is formed on the memory alloy layer 20, wherein the buffer layer 30 is made of organic resin or PDMS (hydrophobic silicone material);
s3: as shown in fig. 3, a patterned electrode layer 40 is formed on the buffer layer 20, and the material of the electrode layer 40 is platinum Pt, gold Au, or the like.
S4: as shown in fig. 4, a dielectric material layer is formed by a chemical deposition method, and then a patterned dielectric layer 50 is formed by dry etching, the dielectric material layer being silicon nitride SiNx.
The electrostatic chuck is formed by the above method.
The invention also discloses an electrostatic sucker, which comprises a memory alloy layer 20, a buffer layer 20, an electrode layer 40 and a dielectric layer 50 which are arranged on the glass substrate 10 in an array mode, wherein the buffer layer 20, the electrode layer 40 and the dielectric layer 50 are sequentially arranged on the memory alloy layer 20.
The memory alloy layer 20 is used as a telescopic layer, and the pressing amount of the electrostatic suction head is controlled through the telescopic amount of the telescopic layer, so that the electrostatic suction head can be ensured to be in contact with Micro LEDs with different heights; the buffer layer can further protect the damage problem of the electrostatic sucker and the Micro LED in the pressing process.
The invention also discloses a Micro LED transferring method, as shown in FIG. 5, comprising the following steps:
s1: as shown in fig. 5, the dielectric layer 50 of the electrostatic chuck is aligned and attached to the Micro LED100 to be transferred on the temporary storage substrate 101;
s2: as shown in fig. 5, the electrostatic chuck is heated, and the memory alloy layer 20 is stretched, so that the electrode layer 40 of the electrostatic chuck picks up the Micro LED100 through the dielectric layer 50;
s3: as shown in fig. 6, the temperature of the electrostatic chuck is maintained, the electrostatic chuck transfers the Micro LED100 to the bonding electrode 201 on the backplane substrate 200, and the Micro LED100 and the bonding electrode 201 are bonded;
s4: the electrostatic sucker releases the Micro LED100 onto the backboard substrate 200;
s5: the electrostatic chuck is removed.
The buffer layer of the electrostatic suction head protects the electrode layer of the electrostatic suction head and the Micro LED, and the memory alloy layer made of the recoverable telescopic material can compensate a gap value caused by warping of the temporary storage substrate, poor film uniformity and the like, so that the electrostatic force is improved, and the transfer yield is increased.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the foregoing embodiments, and various equivalent changes (such as number, shape, position, etc.) may be made to the technical solution of the present invention within the technical spirit of the present invention, and these equivalent changes are all within the protection scope of the present invention.
Claims (7)
1. A method of manufacturing an electrostatic chuck, comprising the steps of:
s1: depositing a memory alloy material layer on a glass substrate, and patterning the memory alloy material layer to form memory alloy layers arranged in an array;
s2: manufacturing a patterned buffer layer on the memory alloy layer;
s3: manufacturing a patterned electrode layer on the buffer layer;
s4: the chemical deposition method forms a dielectric material layer, and then forms a patterned dielectric layer through dry etching.
2. The method of claim 1, wherein the memory alloy layer of step S1 is formed by lift-off.
3. The method of claim 1, wherein the buffer layer of step S2 is made of organic resin or hydrophobic silicone material.
4. The method of claim 1, wherein the electrode layer of step S3 is made of platinum or gold.
5. The method of claim 1, wherein the dielectric material layer of step S4 is silicon nitride.
6. An electrostatic sucker is characterized by comprising a memory alloy layer, a buffer layer, an electrode layer and a dielectric layer which are arranged on a glass substrate in an array mode, wherein the buffer layer, the electrode layer and the dielectric layer are sequentially arranged on the memory alloy layer.
7. A Micro LED transfer method is characterized by comprising the following steps:
s1: aligning and attaching a dielectric layer of the electrostatic suction head with a Micro LED to be transferred on the temporary storage substrate;
s2: heating the electrostatic suction head, and stretching the memory alloy layer to enable the electrode layer to pick up the Micro LED through the dielectric layer;
s3: maintaining the temperature of the electrostatic suction head, transferring the Micro LED onto a bonding electrode on the back plate substrate by the electrostatic suction head, and bonding the Micro LED and the bonding electrode;
s4: the electrostatic suction head releases the Micro LED to the back plate substrate;
s5: the electrostatic chuck is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011372649.8A CN112447578A (en) | 2020-11-30 | 2020-11-30 | Electrostatic suction head, manufacturing method thereof and method for transferring Micro LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011372649.8A CN112447578A (en) | 2020-11-30 | 2020-11-30 | Electrostatic suction head, manufacturing method thereof and method for transferring Micro LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112447578A true CN112447578A (en) | 2021-03-05 |
Family
ID=74738007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011372649.8A Withdrawn CN112447578A (en) | 2020-11-30 | 2020-11-30 | Electrostatic suction head, manufacturing method thereof and method for transferring Micro LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112447578A (en) |
-
2020
- 2020-11-30 CN CN202011372649.8A patent/CN112447578A/en not_active Withdrawn
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20210305 |
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| WW01 | Invention patent application withdrawn after publication |