CN112447489A - Reaction chamber device and working method thereof - Google Patents

Reaction chamber device and working method thereof Download PDF

Info

Publication number
CN112447489A
CN112447489A CN202011566713.6A CN202011566713A CN112447489A CN 112447489 A CN112447489 A CN 112447489A CN 202011566713 A CN202011566713 A CN 202011566713A CN 112447489 A CN112447489 A CN 112447489A
Authority
CN
China
Prior art keywords
buffer ring
wafer
reaction chamber
reaction
chamber device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011566713.6A
Other languages
Chinese (zh)
Inventor
邱勇
吴堃
张鹏兵
陈世名
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Nippon Semiconductor Equipment Co ltd
Original Assignee
Shanghai Nippon Semiconductor Equipment Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Nippon Semiconductor Equipment Co ltd filed Critical Shanghai Nippon Semiconductor Equipment Co ltd
Priority to CN202011566713.6A priority Critical patent/CN112447489A/en
Publication of CN112447489A publication Critical patent/CN112447489A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Abstract

A reaction chamber device and a working method thereof are provided, the reaction chamber device comprises: a reaction chamber body; the wafer bearing platform is positioned in the reaction cavity main body, and the surface of the wafer bearing platform is suitable for placing a wafer; and the buffer ring surrounds the wafer bearing platform and is suitable for moving in a direction vertical to the upper surface of the wafer bearing platform. The reaction chamber device can adjust the uniformity of the reaction rate of the whole wafer surface.

Description

Reaction chamber device and working method thereof
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a reaction cavity device and a working method thereof.
Background
In semiconductor manufacturing, a plurality of processes are involved, each of which is performed by a certain apparatus and process. Among them, the plasma reaction is often used for chemical physical deposition, etching, and photoresist ashing removal of semiconductor wafers and other substrates, and the commonly used plasma sources include ICP, CCP, microwave and other generation methods. For some photoresist ashing removal processes, it is generally not desirable for the energetic ions in the plasma to interact directly with the photoresist, but rather it is desirable to produce a high temperature ashing reaction between the chemically reactive radical intermediates in the plasma and the photoresist, which is a typical high temperature chemical reaction process. Generally, uniformity of the ashing reaction is critical and depends on the uniformity of the distribution of chemically reactive radical intermediates (reactive radicals for short) on the wafer surface, including the uniformity of reactive radical flux, pressure, and composition.
Generally, photoresist with high concentration implants is usually removed by a reductive chemical reaction, such as H2/N2The mixture is used as a reaction gas, and the ashing reaction often shows a strong tendency that the central reaction rate is high and the edge reaction rate is low. The reason is as follows: high density H of plasma generation*The reactive groups have very high migration velocities due to their low mass, H*The residence time in the reaction chamber is particularly short and is very easily pumped away by the vacuum pump, resulting in a wafer edge region H*The overall reaction uniformity is poor due to the tendency of abrupt decrease in concentration, i.e., the tendency of high concentration at the center of the wafer, fast ashing reaction, low concentration at the edge of the wafer, and slow ashing reaction.
Disclosure of Invention
The invention aims to provide a reaction chamber device and a working method thereof, which can adjust the uniformity of the reaction rate of the whole wafer surface.
In order to solve the above technical problem, the present invention provides a reaction chamber device, including: a reaction chamber body; the wafer bearing platform is positioned in the reaction cavity main body, and the surface of the wafer bearing platform is suitable for placing a wafer; and the buffer ring surrounds the wafer bearing platform and is suitable for moving in a direction vertical to the upper surface of the wafer bearing platform.
Optionally, the buffer ring has an opening therein; the opening penetrates through the buffer ring from the inner wall of the buffer ring to the outer wall of the buffer ring.
Optionally, the plurality of openings are arranged along the circumferential direction of the cushion ring.
Optionally, the projection shape of the opening on the side wall of the buffer ring is a strip, and the extending direction of the strip is perpendicular to the arrangement direction of the plurality of openings.
Optionally, a projection shape of the opening on the side wall of the buffer ring extends along the circumferential direction of the buffer ring; a plurality of openings are arranged from the top of the buffer ring to the bottom of the buffer ring.
Optionally, the projection shape of the opening on the side wall of the buffer ring is a hole shape.
Optionally, the material of the buffer ring is quartz, ceramic, bare aluminum or anodized aluminum.
Optionally, the material of the buffer ring is a porous structure material.
Optionally, the sidewall of the buffer ring is perpendicular to the upper surface of the wafer supporting platform.
Optionally, an included angle between the sidewall of the buffer ring and the upper surface of the wafer bearing platform is an obtuse angle, and the obtuse angle is less than or equal to 120 degrees.
Optionally, the method further includes: the height adjuster is positioned at the bottom of the buffer ring and is in contact with the bottom surface of the buffer ring; a height controller adapted to control the height adjuster to adjust a position of the cushion ring in a longitudinal direction.
Optionally, the method further includes: the inductive coupling radio frequency unit is positioned above the reaction cavity main body; the top of the reaction cavity main body is provided with an isolation grid; the inductive coupling radio frequency unit is positioned above the isolation grid; and the air outlet penetrates through the bottom wall of the reaction cavity main body.
The invention also provides a working method of the reaction chamber device, which comprises the following steps: after a wafer is placed on the surface of the wafer bearing platform, the position of the buffer ring in the direction vertical to the upper surface of the wafer bearing platform is adjusted; and after the position of the buffer ring in the direction vertical to the upper surface of the wafer bearing platform is adjusted, carrying out a first process reaction.
Optionally, the reaction chamber device further includes: the height adjuster is positioned at the bottom of the buffer ring and is in contact with the bottom surface of the buffer ring; a height controller; adjusting the position of the buffer ring in the direction vertical to the upper surface of the wafer bearing platform to: the height controller controls the height adjuster to adjust the position of the cushion ring in the longitudinal direction.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
the reaction chamber device provided by the technical scheme of the invention comprises a wafer bearing platform positioned in a reaction chamber main body, wherein the surface of the wafer bearing platform is suitable for placing a wafer; and the buffer ring surrounds the wafer bearing platform. The pumping speed of the reaction source particles in the reaction cavity body, such as H, is adjusted by adjusting the height of the buffer ring*The radical pumping speed optimizes the uniformity of the ashing reaction rate distribution of the wafer in the radial direction, particularly the adjustment of the ashing reaction rate of the edge of the wafer, and optimizes the distribution uniformity of the ashing reaction rate on the whole wafer surface.
Further, the buffer ring is provided with an opening, and the opening penetrates through the buffer ring from the inner wall of the buffer ring to the outer wall of the buffer ring. The byproduct gas generated after the reaction of the reaction source particles and the wafer can be pumped away from the opening in time by the air pumping system, so that the byproduct is prevented from being accumulated in the edge area of the wafer.
According to the working method of the reaction chamber device provided by the technical scheme of the invention, after a wafer is placed on the surface of the wafer bearing platform, the position of the buffer ring in the direction vertical to the upper surface of the wafer bearing platform is adjusted; and after the position of the buffer ring in the direction vertical to the upper surface of the wafer bearing platform is adjusted, carrying out a first process reaction. The pumping speed of the reaction source particles in the reaction cavity body, such as H, is adjusted by adjusting the height of the buffer ring*The radical pumping speed optimizes the uniformity of the ashing reaction rate distribution of the wafer in the radial direction, particularly the adjustment of the ashing reaction rate of the edge of the wafer, and optimizes the distribution uniformity of the ashing reaction rate on the whole wafer surface.
Drawings
FIG. 1 is a schematic cross-sectional view of a reaction chamber device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a buffer ring according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a buffer ring according to another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a cushion ring according to another embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a cushion ring according to another embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a reaction chamber device according to still another embodiment of the present invention.
Detailed Description
An embodiment of the present invention provides a reaction chamber device, please refer to fig. 1 and fig. 2, including:
a reaction chamber body 100;
a wafer support platform 110 disposed within the chamber body 100, the wafer support platform 110 having a surface adapted to receive a wafer 10;
a buffer ring 150 surrounding the wafer support platform 110, wherein the buffer ring 150 is adapted to move in a direction perpendicular to the upper surface of the wafer support platform 110.
Referring to fig. 2, the buffer ring 150 has an opening 151 therein, and the opening 151 penetrates the buffer ring 150 from an inner wall of the buffer ring 150 to an outer wall of the buffer ring 150.
In this embodiment, the openings 151 are arranged along the circumferential direction of the cushion ring 150.
In this embodiment, the projection shape of the opening 151 on the sidewall of the buffer ring 150 is a strip, and the extending direction of the strip is perpendicular to the arrangement direction of the openings 151. In other embodiments, the projection shape of the opening on the sidewall of the buffer ring 150 is other shapes.
In this embodiment, the material of the buffer ring 150 is quartz, ceramic, bare aluminum or anodized aluminum.
In this embodiment, the sidewall of the buffer ring 150 is perpendicular to the upper surface of the wafer stage 110.
In this embodiment, the method further includes: a height adjuster 180 located at the bottom of the buffer ring 150 and contacting the bottom surface of the buffer ring 150; a height controller 160, the height controller 160 being adapted to control the height adjuster 180 to adjust the position of the cushion ring 150 in the longitudinal direction.
In this embodiment, the wafer platform 110 has a plurality of displacement holes penetrating through the wafer platform 110; and ejector pins (not shown) respectively located in the displacement holes, the ejector pins being adapted to support the wafer 10, and the wafer 10 is placed on the surface of the wafer stage 110 by downward movement of the ejector pins in the displacement holes.
In this embodiment, the reaction chamber device is a plasma reaction device. The reaction chamber device can perform an ashing reaction.
The reaction chamber device further comprises: an inductively coupled radio frequency unit located above the reaction chamber main body 100; the inductively coupled radio frequency unit includes: a reaction chamber media tube 120; and the radio frequency antenna 140 is distributed on the side 120 of the reaction chamber medium tube.
The reaction chamber device further comprises: and an air outlet C penetrating the bottom wall of the reaction chamber body 100.
In this embodiment, the buffer ring 150 contacts the wafer platen 110; in other embodiments, the buffer ring 150 is spaced apart from the wafer platen 110.
The top of the reaction chamber body 100 is provided with an isolation grid 130; the inductively coupled rf unit is located above the isolation grid 130.
The top of the reaction chamber medium pipe 120 has an inlet port 121.
The rf antenna 140 excites the gas introduced into the reaction chamber dielectric tube 120 to generate plasma, charged particles (including ions) in the plasma are filtered by the isolation grid 130, and chemically active groups in the plasma freely enter the reaction chamber main body 100 through the isolation grid 130 to reach the surface of the wafer 10, so as to perform a high temperature ashing reaction with the photoresist on the surface of the wafer 10. The wafer 10 after the high temperature ashing reaction is adjusted to the wafer transfer position by the ejector pin and then transferred out.
For photoresist with high concentration implants, reductive chemical reactions are often used in the removal process, such as with H2/N2The mixture being a reaction gas, plasma-generated high density H*The reactive groups have very high migration speeds due to their low mass.
The number of the height adjusters 180 may be other numbers, and is not limited.
In this embodiment, the height adjusters 180 are uniformly distributed at the bottom of the buffer ring 150. In other embodiments, the height adjusters 180 are not evenly distributed at the bottom of the cushion ring 150.
In this embodiment, the reaction chamber device further includes: the device controller 170.
In this embodiment, the pumping speed of the pumping system of the chamber body 100 for the source particles in the chamber body 100, such as for H, is adjusted by adjusting the height of the buffer ring 150*The radical pumping speed optimizes the uniformity of the distribution of the ashing reaction rate of the wafer 10 in the radial direction, particularly the adjustment of the ashing reaction rate of the edge of the wafer 10, and optimizes the distribution uniformity of the ashing reaction rate on the whole surface of the wafer 10.
Further, the buffer ring 150 has an opening 151 therein, and the opening 151 penetrates the buffer ring 150 from the inner wall of the buffer ring 150 to the outer wall of the buffer ring 150. The byproduct gas generated by the reaction between the reaction source particles and the wafer 10 can be pumped out from the opening 151 by the pumping system in time, so as to avoid accumulation of byproducts on the edge region of the wafer 10.
In this embodiment, a part of the reaction source ions can be extracted from the opening, and the part of the reaction source ions can reach the surface of the wafer and then move to the outer side of the buffer ring along the top surface of the buffer ring, so as to be extracted.
Correspondingly, an embodiment of the present invention further provides a working method of the reaction chamber device, including the following steps: after the wafer 10 is placed on the surface of the wafer platform 110, adjusting the position of the buffer ring 150 in the direction perpendicular to the upper surface of the wafer platform 110; after adjusting the position of the buffer ring 150 in the direction perpendicular to the upper surface of the wafer stage 110, a first process reaction is performed.
The position of the buffer ring 150 in the direction perpendicular to the upper surface of the wafer platform 110 is adjusted as follows: the height controller 160 controls the height adjuster 180 to adjust the position of the cushion ring 150 in the longitudinal direction.
The pumping speed of the pumping system of the reaction chamber body for the reaction source particles in the reaction chamber body 100, such as for H, is adjusted by adjusting the height of the buffer ring 150*The radical pumping speed optimizes the uniformity of the distribution of the ashing reaction rate of the wafer 10 in the radial direction, particularly the adjustment of the ashing reaction rate of the edge of the wafer 10, and optimizes the distribution uniformity of the ashing reaction rate on the whole surface of the wafer 10.
The position of the cushion ring 150 in the vertical direction can be adjusted and controlled in real time on-line by the height adjuster 180.
Specifically, a wafer 10 is provided, and a photoresist layer is provided on the surface of the wafer 10; after the wafer 10 is placed on the surface of the wafer stage 110, the wafer stage 110 heats the wafer 10, and the temperature of the wafer 10 is rapidly heated from the normal temperature to the reaction temperature (e.g., about 280 ℃). Meanwhile, the rf antenna 140 excites the gas introduced into the reaction chamber dielectric tube 120 to generate plasma, charged particles (including ions) in the plasma are filtered by the isolation grid 130, chemical active groups in the plasma freely enter the reaction chamber main body 100 through the isolation grid 130 to reach the surface of the wafer 10 and perform a high temperature ashing reaction with the photoresist on the surface of the wafer 10, during the high temperature ashing reaction, the device controller 170 obtains an initial ashing reaction rate, which can realize on-line real-time control, i.e. different reaction steps of the same process can set the buffer rings at different heights, then the device controller 170 evaluates the uniformity of the ashing reaction to calculate the height of the buffer rings to be adjusted, and feeds back the height to the height controller 160, the height controller 160 controls a plurality of height adjusters to adjust the height and direction of the buffer rings 150, thereby realizing the synchronous regulation of the uniformity of the ashing reaction rate; after the high-temperature ashing reaction is completed for a certain time, the wafer 10 is adjusted to a wafer transfer position by the ejector pin and then transferred out.
The working method of the reaction chamber apparatus provided in this embodiment adjusts the pumping speed of the pumping system of the reaction chamber body to the reaction source particles in the reaction chamber body, for example, to H, by adjusting the height of the buffer ring*Radical pumping speed, and optimization of ashing reaction rate of radial wafersUniformity of distribution, particularly the adjustment of the ashing reaction rate at the wafer edge, optimizes the uniformity of the distribution of the ashing reaction rate across the wafer surface.
Another embodiment of the present invention further provides a reaction chamber device, referring to fig. 3, the present embodiment is different from the previous embodiment in that; the structure of the buffer ring 150a used is different. In this embodiment, the buffer ring 150a has an opening 151a therein; the opening 151a penetrates through the cushion ring 150a from the inner wall of the cushion ring 150a to the outer wall of the cushion ring 150a, and a projected shape of the opening 151a on the side wall of the cushion ring 150a extends along the circumferential direction of the cushion ring 150 a; a plurality of openings 151a are arranged in a direction from the top of the cushion ring 150a to the bottom of the cushion ring 150 a.
The material of the buffer ring 150a is quartz, ceramic, bare aluminum or anodized aluminum. The sidewall of the buffer ring 150a is perpendicular to the upper surface of the wafer platform.
The operation of the reaction chamber device in this embodiment refers to the previous embodiments, and will not be described in detail.
Still another embodiment of the present invention further provides a reaction chamber device, referring to fig. 4, the present embodiment is different from the previous embodiment in that; the structure of the buffer ring 150b used is different. In this embodiment, the buffer ring 150b has an opening 151b therein; the opening 151b penetrates the cushion ring 150b from the inner wall of the cushion ring 150b to the outer wall of the cushion ring 150b, and a projection shape of the opening 151b on the side wall of the cushion ring 150b is a hole shape. The projection shape of the opening 151b on the side wall of the buffer ring 150b is a circular, oval or irregular shape of vent holes uniformly distributed.
The material of the buffer ring 150b is quartz, ceramic, bare aluminum or anodized aluminum. The sidewall of the cushion ring 150b is perpendicular to the upper surface of the wafer platform.
The same parts of the reaction chamber device of the present embodiment as those of the previous embodiment will not be described in detail.
Still another embodiment of the present invention further provides a reaction chamber device, referring to fig. 5, the present embodiment is different from the previous embodiment in that; the buffer ring 150c used is different. The material of the cushion ring 150c is a porous structure material, for example, the material of the cushion ring 150c is porous ceramic.
The same parts of the reaction chamber device of the present embodiment as those of the previous embodiment will not be described in detail.
Still another embodiment of the present invention further provides a reaction chamber device, referring to fig. 6, the present embodiment is different from the previous embodiment in that; the included angle between the buffer ring 150d and the upper surface of the wafer supporting platform 110 is an obtuse angle, and the obtuse angle is less than or equal to 120 degrees.
The buffer ring 150d has an opening therein, and the structure of the opening may be any one of the above-described fig. 2 to 4. Alternatively, the material of the cushion ring 150d is a porous structure material, such as porous ceramic, for example, the material of the cushion ring 150 d.
The same parts of the reaction chamber device of the present embodiment as those of the previous embodiment will not be described in detail.
In this embodiment, the working method of the reaction chamber device refers to the working method of the reaction chamber device provided in the previous embodiment, and is not described in detail.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (14)

1. A reaction chamber assembly, comprising:
a reaction chamber body;
the wafer bearing platform is positioned in the reaction cavity main body, and the surface of the wafer bearing platform is suitable for placing a wafer;
and the buffer ring surrounds the wafer bearing platform and is suitable for moving in a direction vertical to the upper surface of the wafer bearing platform.
2. The reaction chamber device of claim 1 wherein the buffer ring has an opening therein; the opening penetrates through the buffer ring from the inner wall of the buffer ring to the outer wall of the buffer ring.
3. The reactor chamber device as claimed in claim 2, wherein the plurality of openings are arranged along a circumferential direction of the buffer ring.
4. The reaction chamber device as claimed in claim 3, wherein the projection of the opening on the side wall of the buffer ring is in the shape of a strip, and the extending direction of the strip is perpendicular to the arrangement direction of the plurality of openings.
5. The reaction chamber device according to claim 2, wherein the projection shape of the opening on the side wall of the buffer ring extends along the circumferential direction of the buffer ring; a plurality of openings are arranged from the top of the buffer ring to the bottom of the buffer ring.
6. The reaction chamber device as claimed in claim 2, wherein the projection shape of the opening on the side wall of the buffer ring is hole-shaped.
7. The reactor chamber device as claimed in claim 2, wherein the material of the buffer ring is quartz, ceramic, bare aluminum or anodized aluminum.
8. The reaction chamber device as claimed in claim 1, wherein the material of the buffer ring is a porous structure material.
9. The reactor chamber assembly of claim 1 wherein the sidewalls of the buffer ring are perpendicular to the upper surface of the wafer support platen.
10. The reactor chamber device as claimed in claim 1, wherein an included angle between the sidewall of the buffer ring and the upper surface of the wafer supporting platform is an obtuse angle, and the obtuse angle is less than or equal to 120 degrees.
11. The reaction chamber device of claim 1 further comprising: the height adjuster is positioned at the bottom of the buffer ring and is in contact with the bottom surface of the buffer ring; a height controller adapted to control the height adjuster to adjust a position of the cushion ring in a longitudinal direction.
12. The reaction chamber device of claim 1 further comprising: the inductive coupling radio frequency unit is positioned above the reaction cavity main body; the top of the reaction cavity main body is provided with an isolation grid; the inductive coupling radio frequency unit is positioned above the isolation grid; and the air outlet penetrates through the bottom wall of the reaction cavity main body.
13. A method of operating a reaction chamber assembly according to any one of claims 1 to 12, comprising:
after a wafer is placed on the surface of the wafer bearing platform, the position of the buffer ring in the direction vertical to the upper surface of the wafer bearing platform is adjusted;
and after the position of the buffer ring in the direction vertical to the upper surface of the wafer bearing platform is adjusted, carrying out a first process reaction.
14. The method of operating a reactor chamber assembly of claim 13, further comprising: the height adjuster is positioned at the bottom of the buffer ring and is in contact with the bottom surface of the buffer ring; a height controller;
adjusting the position of the buffer ring in the direction vertical to the upper surface of the wafer bearing platform to: the height controller controls the height adjuster to adjust the position of the cushion ring in the longitudinal direction.
CN202011566713.6A 2020-12-25 2020-12-25 Reaction chamber device and working method thereof Pending CN112447489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011566713.6A CN112447489A (en) 2020-12-25 2020-12-25 Reaction chamber device and working method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011566713.6A CN112447489A (en) 2020-12-25 2020-12-25 Reaction chamber device and working method thereof

Publications (1)

Publication Number Publication Date
CN112447489A true CN112447489A (en) 2021-03-05

Family

ID=74739826

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011566713.6A Pending CN112447489A (en) 2020-12-25 2020-12-25 Reaction chamber device and working method thereof

Country Status (1)

Country Link
CN (1) CN112447489A (en)

Similar Documents

Publication Publication Date Title
KR102488729B1 (en) Control of on-wafer cd uniformity with movable edge ring and gas injection adjustment
KR102451669B1 (en) Upper electrode having varying thickness for plasma processing
EP1401014B1 (en) Plasma processing device, and method of cleaning the same
TWI633573B (en) Plasma processing device and method
CN213583696U (en) Reaction chamber device
CN112614771A (en) Reaction chamber device and working method thereof
JP7174687B2 (en) Plasma processing apparatus and etching method
CN112447489A (en) Reaction chamber device and working method thereof
CN214099575U (en) Reaction chamber device
KR20200051505A (en) Placing table and substrate processing apparatus
CN214279904U (en) Reaction chamber device
CN112447487A (en) Reaction chamber device and working method thereof
CN112447488A (en) Reaction chamber device and working method thereof
JP7321026B2 (en) EDGE RING, PLACE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD
TW202231130A (en) Plasma processing apparatus and adjustment method capable of replacing the adjusting ring to meet process requirements and providing convenience for adjusting etching parameters
CN111681976A (en) Inductive coupling edge etching reaction device and edge etching method
CN212277163U (en) Inductive coupling edge etching reaction device
CN212136400U (en) Novel edge etching reaction device
CN213878020U (en) Reaction chamber device
US20220270862A1 (en) Substrate support, plasma processing system, and plasma etching method
CN213583695U (en) Plasma processing device
TWI828132B (en) Confinement ring, plasma processing device and exhaust control method thereof
CN218896616U (en) Semiconductor processing equipment
TWI835453B (en) Tapered upper electrode for uniformity control in plasma processing
CN111627844A (en) Novel edge etching reaction device and edge etching method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination