CN112436010B - Flexible memory based on two-dimensional material - Google Patents
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- CN112436010B CN112436010B CN202011289834.0A CN202011289834A CN112436010B CN 112436010 B CN112436010 B CN 112436010B CN 202011289834 A CN202011289834 A CN 202011289834A CN 112436010 B CN112436010 B CN 112436010B
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- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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Abstract
The invention discloses a flexible memory based on a two-dimensional material, which comprises a flexible substrate, and an indium tin oxide layer, an aluminum oxide barrier layer, a nano graphene layer, an aluminum oxide tunneling layer, a molybdenum disulfide layer and a metal electrode which are sequentially arranged on the flexible substrate from bottom to top. The invention has the beneficial effects that: the flexible memory based on the two-dimensional material provided by the invention utilizes the nano-graphene with adjustable density to effectively capture and release transfer electrons under different working conditions, so that the writing and erasing processes of a device are realized. And the common action of the input voltage and the incident illumination provided by the nano generator under the mechanical motion is utilized to realize the multi-state storage performance of the device under the action of different mechanical and optical signals.
Description
Technical Field
The invention relates to the field of nonvolatile memories, in particular to a flexible memory based on a two-dimensional material.
Background
In recent years, in view of new requirements for miniaturization and structural flexibility of devices, two-dimensional materials have rapidly developed in the research of flexible memories due to their excellent electrical and mechanical properties, and can realize a larger memory window, a lower operating voltage, and better data retention characteristics. Although the performance of the two-dimensional material-based memory is not comparable to that of the silicon-based memory at present, the characteristics of high storage density, fast erasing performance, adaptability to various complex environments and the like are important supplements of the nonvolatile semiconductor memory market. However, to realize the commercial application, the following problems need to be solved: (1) the carrier mobility of the device is improved, so that the erasing speed of the memory device is effectively improved. (2) The operating voltage is reduced to reduce power consumption. (3) The retention and durability of the flexible memory device under different mechanical deformations are improved to meet the requirements of different environment operations. (4) The structure of the large-scale integrated device is optimized to reduce signal mutual interference.
Among different types of memories, a memory based on a two-dimensional material transistor structure is widely used by inserting a floating gate structure between a barrier layer and a tunnel layer with characteristics of non-destructive reading and writing, easy integration, and the like. A high voltage is typically applied to the gate causing charge to tunnel back and forth in the dielectric layer, thereby achieving a programmed/erased state. The multi-storage level of the device is determined by the charge trapping/releasing capacity of the floating gate. In the case of various two-dimensional materials,the single-layer molybdenum disulfide has obvious band gap of 1.8eV, and the current on-off ratio of the field effect transistor can reach 10 8 Thereby providing a distinguishable program/erase state for its application from the memory device. Therefore, the floating gate structure is inserted on the basis of the molybdenum disulfide field effect transistor structure, so that the function of the floating gate structure as a memory can be realized. However, in order to bring such a device to an erased state, a large positive voltage needs to be additionally applied to the gate, and therefore high power consumption is inevitable for the device to normally operate.
Disclosure of Invention
The main purpose of the present application is to provide a flexible memory based on two-dimensional material, which can effectively capture and release transfer electrons under different working conditions, thereby realizing the writing and erasing processes of the device.
In order to achieve the above purpose, the invention provides the following technical scheme:
a flexible memory based on a two-dimensional material comprises a flexible substrate, and an indium tin oxide layer, an aluminum oxide barrier layer, a nano graphene layer, an aluminum oxide tunneling layer, a molybdenum disulfide layer and a metal electrode which are sequentially arranged on the flexible substrate from bottom to top;
the preparation method of the flexible memory comprises the following steps:
(1) depositing indium tin oxide on the flexible substrate by a magnetron sputtering method to prepare an indium tin oxide layer as a bottom electrode;
(2) depositing aluminum oxide on the surface of the indium tin oxide layer by an atomic layer deposition method to serve as an aluminum oxide barrier layer;
(3) depositing nano graphene on a silicon wafer covered with silicon oxide by a plasma chemical vapor deposition method, spin-coating PMMA, transferring the PMMA onto a flexible substrate after wet etching, and removing the PMMA by using acetone to obtain a nano graphene layer;
(4) obtaining a graphene graphic array by utilizing ultraviolet optical exposure and reactive ion etching technologies;
(5) depositing alumina on the surface of the nano graphene layer by an atomic layer deposition method to serve as an alumina tunneling layer;
(6) depositing molybdenum disulfide on a substrate by a chemical vapor deposition method to obtain a single-layer molybdenum disulfide, spin-coating PMMA, soaking with hot alkali solution, and then transferring to a flexible substrate to obtain a molybdenum disulfide layer; and obtaining a molybdenum disulfide graphic array matched with the graphene by utilizing ultraviolet optical exposure and reactive ion etching technologies.
As a preferred embodiment, the flexible memory based on two-dimensional material further includes a nano-generator, and the nano-generator is connected in series with the ITO metal electrode; preferably, the nanogenerator is a PTFE nanogenerator.
In the above flexible memory based on two-dimensional material, as a preferred embodiment, in step (1), the thickness of the ito layer is 10-200 nm, and preferably, the thickness of the ito layer is 30 nm.
In the above flexible memory based on two-dimensional material, as a preferred embodiment, in the step (2), the thickness of the alumina barrier layer is 20-50 nm, and preferably, the thickness of the alumina barrier layer is 30 nm.
As a preferred embodiment, in the step (3), the thickness of the silicon chip coated with the silicon oxide is 280-320 nm, and the thickness of the nano graphene layer is 0.8-1.2 nm.
As a preferred embodiment, in the above flexible memory based on two-dimensional material, in step (3), the wet etching is: and soaking the graphene spin-coated with PMMA in hydrofluoric acid for 8-12 min.
In the above flexible memory based on two-dimensional material, as a preferred embodiment, in step (5), the thickness of the alumina tunneling layer is 5-15 nm, and preferably, the thickness of the alumina tunneling layer is 10 nm.
As a preferred embodiment, in the step (6), the soaking with the hot alkali solution is: soaking in 80-120 deg.C potassium hydroxide solution for 1 hr.
As a preferred embodiment, in the step (6), the thickness of the molybdenum disulfide layer is preferably 0.65 nm.
In the flexible memory based on two-dimensional material, the metal electrode is a Ti/Au electrode as a preferred embodiment.
Compared with the prior art, the invention has the beneficial effects that: the flexible memory based on the two-dimensional material provided by the invention utilizes the nano-graphene with adjustable density to effectively capture and release transfer electrons under different working conditions, so that the writing and erasing processes of a device are realized. And the common action of the input voltage and the incident illumination provided by the nano generator under the mechanical motion is utilized to realize the multi-state storage performance of the device under the action of different mechanical and optical signals.
According to the flexible memory based on the two-dimensional material, the dual regulation and control of optical and mechanical signals are utilized, no additional grid voltage is needed, the energy consumption is effectively reduced, and the introduction of the mechanical signal enables the device to have the function of integrating sensing and storage into a whole, so that the device is multifunctional.
Drawings
FIG. 1 is a diagram: the invention discloses a structural schematic diagram of a vertical interface of a flexible memory based on a two-dimensional material;
in the figure: 1. a flexible substrate; 2. an indium tin oxide layer; 3. an alumina barrier layer; 4. a nanographene layer, 5, an alumina tunneling layer; 6. a molybdenum disulfide layer; 7. a metal electrode; 8. a nano-generator;
FIG. 2a is: the flexible memory based on the two-dimensional material has the current maintaining characteristic after the PTFE nano generator moves for different distances;
FIG. 2b is: the flexible memory based on the two-dimensional material has the current retention characteristic after being irradiated by laser pulses with different powers.
Detailed Description
In order to make the technical solutions in the embodiments of the present application better understood, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to examples, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The flexible memory based on the two-dimensional material utilizes the nano graphene film as a flexible multifunctional molybdenum disulfide nonvolatile memory of a floating gate structure. The storage device utilizes the nano-graphene with adjustable density to effectively capture and release transfer electrons under different working conditions, thereby realizing the writing and erasing processes of the device. And the common action of the input voltage and the incident illumination provided by the nano generator under the mechanical motion is utilized to realize the multi-state storage performance of the device under the action of different mechanical and optical signals.
Example 1
A flexible memory based on a two-dimensional material comprises a flexible substrate, and an indium tin oxide layer, an aluminum oxide barrier layer, a nano graphene layer, an aluminum oxide tunneling layer, a molybdenum disulfide layer and a metal electrode which are sequentially arranged on the flexible substrate from bottom to top;
the preparation method of the flexible memory based on the two-dimensional material in the embodiment 1 comprises the following steps:
(1) depositing indium tin oxide on a flexible substrate by a magnetron sputtering method to prepare an indium tin oxide layer with the thickness of 20nm as a bottom electrode;
(2) depositing aluminum oxide on the surface of the indium tin oxide layer by an atomic layer deposition method to serve as an aluminum oxide barrier layer, wherein the thickness of the aluminum oxide barrier layer is 20 nm;
(3) depositing graphene on a silicon wafer covered with silicon oxide by a plasma chemical vapor deposition method, wherein the thickness of the silicon wafer covered with the silicon oxide is 280nm, spin-coating PMMA, soaking the graphene subjected to PMMA spin-coating in hydrofluoric acid for 8min for wet etching, then transferring the graphene to a flexible substrate, and removing the PMMA by using acetone to obtain a graphene nano layer with the thickness of 1 nm;
(4) obtaining a graphene graphic array by utilizing ultraviolet optical exposure and reactive ion etching technologies;
(5) depositing alumina on the surface of the graphene nano-layer by an atomic layer deposition method to serve as an alumina tunneling layer, wherein the thickness of the alumina tunneling layer is 8 nm;
(6) depositing on a substrate by a chemical vapor deposition method to obtain a single-layer molybdenum disulfide, spin-coating PMMA, soaking for 1h by using a potassium hydroxide solution at the temperature of 80 ℃, and then transferring to a flexible substrate to obtain a molybdenum disulfide layer with the thickness of 0.65 nm; obtaining a molybdenum disulfide graphic array matched with graphene by utilizing ultraviolet optical exposure and reactive ion etching technologies, and obtaining a metal electrode by evaporating Ti/Au;
and a PTFE nano generator is connected in series on the metal electrode to obtain the flexible memory based on the two-dimensional material.
Example 2
A flexible memory based on a two-dimensional material comprises a flexible substrate, and an indium tin oxide layer, an aluminum oxide barrier layer, a nano graphene layer, an aluminum oxide tunneling layer, a molybdenum disulfide layer and a metal electrode which are sequentially arranged on the flexible substrate from bottom to top;
the preparation method of the flexible memory based on the two-dimensional material in the embodiment 2 comprises the following steps:
(1) depositing indium tin oxide on a flexible substrate by a magnetron sputtering method to prepare an indium tin oxide layer with the thickness of 30nm as a bottom electrode;
(2) depositing aluminum oxide on the surface of the indium tin oxide layer by an atomic layer deposition method to serve as an aluminum oxide barrier layer, wherein the thickness of the aluminum oxide barrier layer is 30 nm;
(3) depositing graphene on a silicon wafer covered with silicon oxide by a plasma chemical vapor deposition method, wherein the silicon wafer is covered with the silicon oxide with the thickness of 300nm, spin-coating PMMA, soaking the graphene subjected to PMMA spin-coating in hydrofluoric acid for 10min for wet etching, then transferring the graphene to a flexible substrate, and removing the PMMA by using acetone to obtain a nano graphene layer with the thickness of 1 nm;
(4) obtaining a graphene graphic array by utilizing ultraviolet optical exposure and reactive ion etching technologies;
(5) depositing alumina on the surface of the graphene nano-layer by an atomic layer deposition method to serve as an alumina tunneling layer, wherein the thickness of the alumina tunneling layer is 10 nm;
(6) depositing molybdenum disulfide on a substrate by a chemical vapor deposition method to obtain a single-layer molybdenum disulfide, spin-coating PMMA, soaking for 1h by using a potassium hydroxide solution at the temperature of 100 ℃, then transferring to a flexible substrate to obtain a molybdenum disulfide layer with the thickness of 0.65nm, obtaining a molybdenum disulfide pattern display matched with graphene by using ultraviolet optical exposure and reactive ion etching technologies, and obtaining a metal electrode by evaporating Ti/Au;
and a PTFE nano generator is connected in series on the metal electrode to obtain the flexible memory based on the two-dimensional material.
Example 3
A flexible memory based on a two-dimensional material comprises a flexible substrate, and an indium tin oxide layer, an aluminum oxide barrier layer, a nano graphene layer, an aluminum oxide tunneling layer, a molybdenum disulfide layer and a metal electrode which are sequentially arranged on the flexible substrate from bottom to top;
the preparation method of the flexible memory based on the two-dimensional material in the embodiment 3 comprises the following steps:
(1) depositing indium tin oxide on a flexible substrate by a magnetron sputtering method to prepare an indium tin oxide layer with the thickness of 50nm as a bottom electrode;
(2) depositing aluminum oxide on the surface of the indium tin oxide layer by an atomic layer deposition method to serve as an aluminum oxide barrier layer, wherein the thickness of the aluminum oxide barrier layer is 25 nm;
(3) depositing graphene on a silicon wafer covered with silicon oxide by a plasma chemical vapor deposition method, wherein the thickness of the silicon wafer covered with the silicon oxide is 320nm, spin-coating PMMA, soaking the graphene subjected to PMMA spin-coating in hydrofluoric acid for 12min for wet etching, then transferring the graphene to a flexible substrate, and removing the PMMA by using acetone to obtain a graphene nano layer with the thickness of 1 nm;
(4) obtaining a graphene graphic array by utilizing ultraviolet optical exposure and reactive ion etching technologies;
(5) depositing alumina on the surface of the graphene nano-layer by an atomic layer deposition method to serve as an alumina tunneling layer, wherein the thickness of the alumina tunneling layer is 15 nm;
(6) depositing molybdenum disulfide on a substrate by a chemical vapor deposition method to obtain a single-layer molybdenum disulfide, spin-coating PMMA, soaking for 1h by using a potassium hydroxide solution at the temperature of 120 ℃, and then transferring to a flexible substrate to obtain a molybdenum disulfide layer with the thickness of 0.65 nm; obtaining a molybdenum disulfide pattern display matched with graphene by utilizing ultraviolet optical exposure and reactive ion etching technologies, and obtaining a metal electrode by evaporating Ti/Au;
and a PTFE nano generator is connected in series on the metal electrode to obtain the flexible memory based on the two-dimensional material.
Performance research of flexible memory based on two-dimensional material in embodiment 3 of the invention
The results of the study are shown in FIGS. 2a and 2 b:
as can be seen from fig. 2 a: when the distance between two electrodes of the nano generator is changed, namely the grid voltage applied to the flexible memory is changed, the source-drain current of the flexible memory can form different storage states, and the current of the flexible memory is kept at a fixed value along with the time, namely the flexible memory based on the two-dimensional material has a stable storage function.
As can be seen from fig. 2 b: under the condition of different illumination powers, the source-drain current of the device forms different storage states along with the change of illumination intensity, and the storage performance of the device is basically not changed along with the time lapse, namely the storage performance of the device has good stability.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and additions can be made without departing from the method of the present invention, and these modifications and additions should also be regarded as the protection scope of the present invention.
Claims (13)
1. A flexible memory based on two-dimensional materials, characterized by:
the flexible memory comprises a flexible substrate, an indium tin oxide layer, an aluminum oxide barrier layer, a nano graphene layer, an aluminum oxide tunneling layer, a molybdenum disulfide layer and a metal electrode, wherein the indium tin oxide layer, the aluminum oxide barrier layer, the nano graphene layer, the aluminum oxide tunneling layer, the molybdenum disulfide layer and the metal electrode are sequentially arranged on the flexible substrate from bottom to top;
the preparation method of the flexible memory comprises the following steps:
(1) depositing indium tin oxide on the flexible substrate by a magnetron sputtering method to prepare an indium tin oxide layer as a bottom electrode;
(2) depositing aluminum oxide on the surface of the indium tin oxide layer by an atomic layer deposition method to serve as an aluminum oxide barrier layer;
(3) depositing nano graphene on a silicon wafer coated with silicon oxide by a plasma chemical vapor deposition method, spin-coating PMMA, transferring the PMMA to a flexible substrate after wet etching, and removing the PMMA by using acetone to obtain a nano graphene layer;
(4) obtaining a graphene graphic array by utilizing ultraviolet optical exposure and reactive ion etching technologies;
(5) depositing aluminum oxide on the surface of the nano graphene layer by an atomic layer deposition method to serve as an aluminum oxide tunneling layer;
(6) depositing molybdenum disulfide on a substrate by a chemical vapor deposition method to obtain a single-layer molybdenum disulfide, spin-coating PMMA, soaking with hot alkali solution, and then transferring to a flexible substrate to obtain a molybdenum disulfide layer; and obtaining a molybdenum disulfide pattern array matched with the graphene by utilizing ultraviolet optical exposure and reactive ion etching technologies, and evaporating Ti/Au to obtain the metal electrode.
2. A two-dimensional material based flexible memory as defined in claim 1, wherein: the nano generator is a PTFE nano generator.
3. The two-dimensional material based flexible memory of claim 1, wherein:
in the step (1), the thickness of the indium tin oxide layer is 10-200 nm.
4. A two-dimensional material based flexible memory according to claim 1, wherein said indium tin oxide layer has a thickness of 30 nm.
5. The two-dimensional material based flexible memory of claim 1, wherein:
in the step (2), the thickness of the alumina barrier layer is 20-50 nm.
6. The two-dimensional material based flexible memory of claim 1, wherein: the thickness of the alumina barrier layer is 30 nm.
7. The two-dimensional material based flexible memory of claim 1, wherein:
in the step (3), the thickness of the silicon wafer coated with the silicon oxide is 280-320 nm, and the thickness of the nano graphene layer is 0.8-1.2 nm.
8. The two-dimensional material based flexible memory of claim 1, wherein:
in the step (3), the wet etching is: and soaking the graphene spin-coated with PMMA in hydrofluoric acid for 8-12 min.
9. The two-dimensional material based flexible memory of claim 1, wherein:
in the step (5), the thickness of the alumina tunneling layer is 5-15 nm.
10. The two-dimensional material based flexible memory of claim 1, wherein: in the step (5), the thickness of the aluminum oxide tunneling layer is 10 nm.
11. The two-dimensional material based flexible memory of claim 1, wherein:
in the step (6), the soaking with hot alkali solution is as follows: soaking in 80-120 deg.C potassium hydroxide solution for 1 hr.
12. The two-dimensional material based flexible memory of claim 1, wherein: in the step (6), the thickness of the molybdenum disulfide layer is 0.65 nm.
13. The two-dimensional material based flexible memory of claim 1, wherein: the metal electrode is a Ti/Au electrode.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709293A (en) * | 2012-06-06 | 2012-10-03 | 中国科学院物理研究所 | Novel low-voltage high-performance nonvolatile memory based on separate nano graphene floating gate |
| CN103368450A (en) * | 2013-01-28 | 2013-10-23 | 国家纳米科学中心 | Frictional electricity nano-generator and shoe pad utilizing frictional electricity nano-generator |
| CN106655873A (en) * | 2016-07-29 | 2017-05-10 | 北京纳米能源与系统研究所 | Friction nano-generator and monitoring device and self-driven card lamp using same |
| CN107104607A (en) * | 2016-02-22 | 2017-08-29 | 北京纳米能源与系统研究所 | The nano generator of oscillatory type |
| CN111463265A (en) * | 2020-04-14 | 2020-07-28 | 有研工程技术研究院有限公司 | Charge trapping memory based on two-dimensional material and preparation method thereof |
| CN111834393A (en) * | 2019-04-22 | 2020-10-27 | 中国科学院金属研究所 | Flexible carbon nanotube photoelectric memory based on aluminum nanocrystalline floating gate |
-
2020
- 2020-11-17 CN CN202011289834.0A patent/CN112436010B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709293A (en) * | 2012-06-06 | 2012-10-03 | 中国科学院物理研究所 | Novel low-voltage high-performance nonvolatile memory based on separate nano graphene floating gate |
| CN103368450A (en) * | 2013-01-28 | 2013-10-23 | 国家纳米科学中心 | Frictional electricity nano-generator and shoe pad utilizing frictional electricity nano-generator |
| CN107104607A (en) * | 2016-02-22 | 2017-08-29 | 北京纳米能源与系统研究所 | The nano generator of oscillatory type |
| CN106655873A (en) * | 2016-07-29 | 2017-05-10 | 北京纳米能源与系统研究所 | Friction nano-generator and monitoring device and self-driven card lamp using same |
| CN111834393A (en) * | 2019-04-22 | 2020-10-27 | 中国科学院金属研究所 | Flexible carbon nanotube photoelectric memory based on aluminum nanocrystalline floating gate |
| CN111463265A (en) * | 2020-04-14 | 2020-07-28 | 有研工程技术研究院有限公司 | Charge trapping memory based on two-dimensional material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation;Wang,Tian-Yu 等;《ADVANCED SCIENCE》;20200316;第7卷(第8期);第1903480（1-8）页 * |
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