CN112432936A - Rapid quantitative imaging characterization method for life space distribution of semiconductor wafer excess carriers - Google Patents
Rapid quantitative imaging characterization method for life space distribution of semiconductor wafer excess carriers Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N2021/6417—Spectrofluorimetric devices
Abstract
The invention discloses a rapid quantitative imaging characterization method for the service life spatial distribution of an excess carrier of a semiconductor wafer, which is characterized in that a silicon wafer is excited after laser which is subjected to light intensity sinusoidal modulation and has photon energy larger than the forbidden bandwidth of the semiconductor is collimated and expanded, the excess carrier is generated in the silicon wafer, and the concentration of the excess carrier changes with the same frequency sinusoid along with time; the excessive carriers are sampled and shot by a CCD (charge coupled device) placed on the back of the wafer through a same-frequency sinusoidal fluorescent signal dynamic image emitted by radiation recombination and are transmitted into a computer through a frame grabber; the laser modulation signal is used as a reference signal, digital phase-locking operation is carried out on discrete time domain data of all pixel points of the CCD in different frames, and a phase image can be extracted from noise; quantitative spatial distribution of the wafer excess carrier lifetime can be obtained by analyzing the phase image. The method can provide a non-contact, nondestructive, quantitative, rapid and online electrical quality imaging characterization method for a semiconductor wafer production line.
Description
Technical Field
The invention relates to the field of semiconductor material characteristic detection, in particular to a non-contact, nondestructive and quantitative imaging optical characterization method for service life spatial distribution of excess carriers of a semiconductor wafer.
Background
The development of semiconductor materials and device science began in the fifties of the last century, and at almost the same time, methods for carrier lifetime characterization have received much attention and continued to date. Two groups of which carrier lifetime is of most concern are in the field of microelectronic and photovoltaic energy. The carrier lifetime is one of the most sensitive parameters reflecting the purity, defects, impurities, interface states, etc. of electronic materials, and directly determines the performance of devices. There has been no other method to date that can probe 10 at room temperature, as is the case for carrier lifetime measurements9～1011cm–3Such low concentrations of defects or impurities and in principle without minimum limitations. Carrier lifetime and related carrier diffusion length measurements have become routine routines today in the integrated circuit industry from raw material preparation to device development and production, playing the role of process cleaning monitoring, although carrier lifetime itself has little direct impact on unipolar MOS device performance.
The carrier life measuring technology based on the optical detection method has the advantages of non-contact, no damage, no pollution, rapidness and the like, and becomes a new generation of detection technology with key development in the field of characterization of the current semiconductor carrier recombination and transport characteristics. Among the optical detection techniques applied to the field of semiconductor material characteristic detection, the Photoluminescence (Photoluminescence) technique is known to be capable of measuring the excess carrier recombination and transport performance, including measurement of excess carrier transport parameters such as bulk recombination lifetime, mobility, diffusion coefficient, surface recombination rate, and the like. In the process of realizing the measurement of the excess carrier recombination and transport parameters, the photoluminescence technology usually adopts a mode of excitation light intensity modulation, fluorescence signals (generally in a near infrared band) generated by radiation recombination of excited excess carriers in a sample carry the same frequency components, a phase-locked amplifier is used for demodulating the amplitude and phase under the frequency, data of which the amplitude and phase change along with the frequency is obtained by scanning from low frequency to high frequency through modulating the frequency, and the excess carrier recombination and transport parameters are extracted from the data. However, for the current trend that the size of a semiconductor substrate is increasing (16 inches of wafers are becoming mainstream gradually), the traditional Photoluminescence (Photoluminescence) technology based on single-point detection can only perform local spot inspection of the service life of the surplus carriers, and cannot perform full-coverage scanning measurement on the whole large-size wafer, and if a point-by-point scanning mode is adopted to realize imaging, the time consumption is too long, and online quick inspection cannot be realized.
The invention provides a method for replacing a single-point detector in the traditional photoluminescence carrier life measuring technology by using a CCD (charge coupled device), and develops the photoluminescence imaging based on the CCD from a qualitative imaging technology into a quantitative imaging method, wherein the numerical value of each pixel point in an image has absolute physical significance and dimension, namely the equivalent life of the surplus carrier of a semiconductor wafer. The qualitative to quantitative measurement is realized by a phase-locked imaging principle, namely, a CCD carries out strictly synchronous sampling shooting on a dynamic image of a modulated fluorescent signal emitted from a wafer, and a phase lag image of the dynamic fluorescent image relative to a same-frequency reference signal is obtained after signal processing, so that a quantitative equivalent life image of an excess carrier is obtained.
Disclosure of Invention
The invention provides a rapid quantitative imaging characterization method for spatial distribution of service life of excess carriers of a semiconductor wafer, which comprises a function generator 1, an excitation laser 2, a collimation and beam expansion system 3, a wafer sample 4 to be characterized, a fluorescence imaging CCD5, a long-pass filter 6 and a computer 7, and is characterized in that:
the signal generated by the function generator 1 is used for modulating the laser 2 to emit laser with light intensity changing in a sine way along with time, the laser passes through the beam collimation and beam expansion system 3 to form a large light spot with uniformly distributed light intensity to be incident on a semiconductor wafer sample 4, excess carriers with concentration changing in a sine way along with time are generated in the semiconductor wafer sample, the excess carriers are sampled and shot by a CCD5 through a dynamic image of a same-frequency sine fluorescence signal emitted by radiation recombination, a long pass filter 6 placed in front of a CCD5 lens filters excitation light emitted by the laser 2 and allows fluorescence to enter a CCD5, the shot dynamic image data are transmitted to a computer 7 with a frame grabber, the laser modulation signal is used as a reference signal, and the computer 7 performs digital phase-locking operation on discrete time domain data of all pixel points of the CCD5 to extract a phase image from noise; quantitative spatial distribution of the wafer excess carrier lifetime can be obtained by analyzing the phase image.
The frequency of the modulation signal generated by the function generator 1 should be low frequency, that is, quasi-steady state approximation ω τ <1 is satisfied, where ω is light intensity modulation angular frequency, τ is equivalent carrier lifetime of the silicon wafer to be measured, and meanwhile, the direct current component of the modulation signal should be much larger than the alternating current component, so that the laser light intensity is a small alternating current signal superimposed on a large direct current background.
The photon energy of the laser emitted by the laser 2 is larger than the forbidden bandwidth of the semiconductor wafer material to be tested, so that the excess carriers can be excited; meanwhile, the optical power of the laser should be high enough, the excitation light intensity of the whole wafer after the light spot expands the beam meets the requirement of carrier injection dosage, and the dosage requirement is determined by specific representation requirements.
After the laser beam emitted from the laser 2 passes through the collimation and beam expansion system 3, large-size light spots with uniformly distributed light intensity are formed, so that uniform excitation on a semiconductor wafer sample can be realized, namely the incident light intensity at each position of the wafer is consistent.
The photosensitive waveband of the CCD5 is selected as the fluorescent waveband of the semiconductor to be detected, generally the near-infrared CCD, and the CCD5 is placed on the back of the wafer, namely the other side where the excitation light is located, so that the reflected light of the front surface of the wafer to the excitation light cannot reach the CCD5, and the long-pass filter 6 placed in front of the CCD5 can further filter the stray excitation light, so as to ensure that the image shot by the CCD is a pure fluorescent image.
The CCD5 has the function of external trigger, the frame rate is adjustable, and the Nyquist sampling theorem is satisfied, i.e. the frame rate is more than twice of the laser modulation frequency, the shooting trigger sequence signal of the CCD5 is generated by the computer 7, and the synchronous control of the whole system is realized by the computer 7.
The overall duration of the image sequence obtained by the CCD5 should be an integral multiple of the laser modulation period, and in general, this condition is naturally satisfied when the laser modulation frequency is set to an integral multiple of 1Hz and the overall duration of the image sequence is selected to be an integral multiple of 1 s.
The computer 7 uses the laser modulation signal as a reference signal to perform digital phase-locking operation on the discrete time domain signal of each pixel point of the image sequence, and the phase value of each pixel point obtained thereby constitutes a phase-locked phase image of the wafer at the adjustment frequency, where the phase is understood as the phase lag of the fluorescent signal relative to the same-frequency reference signal.
Using formulas
Calculating an equivalent carrier lifetime image from the phase image, wherein tau is the equivalent carrier lifetime of the silicon wafer to be tested,
for phase, ω is the intensity modulation angular frequency, and the equivalent carrier lifetime is understood herein to be the overall recombination lifetime that integrates all of the excess carrier recombination events in the semiconductor wafer, such as bulk recombination, surface recombination, Shockley-Read-Hall recombination, radiative recombination, Auger recombination, etc.
The invention has the beneficial effects that: the traditional photoluminescence carrier life detection technology is expanded from single-point local measurement to space surface imaging, and the photoluminescence imaging based on the CCD is developed into a quantitative imaging method from a qualitative imaging technology, the numerical value of each pixel point in the image has absolute physical significance and dimension, namely the equivalent life of the surplus carriers of the semiconductor wafer, and a non-contact, nondestructive, quantitative, rapid and online electrical quality imaging characterization method can be provided for a large-size semiconductor wafer production line.
Drawings
FIG. 1 is a schematic diagram of an experimental system of the present invention, in which 1 is a function generator, 2 is an excitation laser, 3 is a collimated beam expanding system, 4 is a wafer sample to be characterized, 5 is a fluorescence imaging CCD, 6 is a long pass filter, and 7 is a computer.
Fig. 2 is a schematic diagram of a system synchronization trigger sequence signal.
FIG. 3 is a diagram showing the quantitative imaging result of a single crystal silicon wafer. (a) Fluorescence phase image at 20-Hz modulation frequency, (b) spatial distribution of lifetime of excess carriers of the wafer calculated based on the phase image.
Detailed Description
The following describes a fast quantitative imaging characterization method for lifetime spatial distribution of excess carriers of a semiconductor wafer according to the present invention with reference to fig. 1 to 3. It is to be understood, however, that the drawings are provided for a better understanding of the invention and are not to be construed as limiting the invention. The specific implementation steps are as follows:
(1) and (5) building an experimental system. A rapid quantitative imaging characterization experiment system for spatial distribution of service life of the excessive carriers of the silicon wafer as shown in figure 1 is set up, and comprises a function generator 1, an excitation laser 2, a collimation and beam expansion system 3, a wafer sample 4 to be characterized, an indium gallium arsenic CCD5, a long pass filter 6 and a computer 7.
a. And connecting the function generator with the laser, and setting a safety range of the output signal amplitude of the function generator based on the driving signal data provided by the laser specification.
b. The excitation laser is continuous laser with 808nm and peak power of 30W, the photon energy of the excitation laser is larger than the forbidden band width of silicon, so that excess carriers can be excited, and the optical power of the excitation laser can meet the injection dosage requirement represented by most silicon wafer carriers.
c. And adjusting the beam collimation and expansion device 3 to form large-size light spots with uniformly distributed light intensity to be incident on the surface of the wafer, so as to realize uniform excitation on the sample.
d. A long-pass filter is placed in front of the InGaAs CCD to completely filter stray excitation light and only pass near-infrared fluorescence signals generated by radiation recombination of excess carriers in a silicon wafer.
e. And adjusting the CCD lens to enable the focal plane to be at the position of the wafer sample plane.
(2) And (4) carrying out wafer photoluminescence phase-locked imaging. Based on the experimental system, the photoluminescence phase-locked imaging is developed, and the modulation signal is selected and set, the absolute light intensity is measured and calibrated, the synchronous control software is compiled, and a dynamic diagram is generatedAnd acquiring image data, and finally acquiring photoluminescence phase-locked imaging data. As an example, the silicon wafer sample to be tested is p-type FZ single crystal silicon, and the resistivity is more than 103Omega cm, hydrogen passivation is formed after the surface is etched by HF.
a. According to the basic information of the sample to be detected, the equivalent carrier life is known to be in the order of hundred microseconds, so that the modulation frequency generated by the function generator is set to be 20Hz, and the quasi-steady state is approximate to omega tau < <1, wherein omega is the light intensity modulation angular frequency, and tau is the equivalent carrier life of the silicon wafer to be detected; at the same time, the output signal of the function generator is set to generate a modulation signal with a DC offset 10 times larger than the AC amplitude to drive the laser.
b. And measuring the incident light power and the spot area at the position of the sample, and calculating the absolute light intensity as a carrier injection dose basis of the representation.
c. By using synchronous control software of an LABVIEW writing system, a synchronous trigger sequence signal is shown in figure 2, after a computer sends out a main trigger signal, a function generator starts to modulate light emitted by a laser, and simultaneously four times of 20-Hz modulation frequency is used as a trigger signal of a CCD (charge coupled device), so that the Nyquist sampling theorem is met, and the exposure time of a camera is selected to be 16.6ms which is far less than the time scale corresponding to a frame rate.
d. According to the system control scheme, the CCD starts to continuously capture an image sequence, and image signals of 100 modulation periods are continuously recorded to ensure excellent signal-to-noise ratio.
(3) Image data processing and carrier lifetime calculation. Based on the image sequence data obtained in the previous step, the spatial distribution map of the lifetime of the excess carriers of the silicon wafer can be calculated.
a. The amplitude and the phase of each pixel point can be calculated by taking the light modulation signal as a reference signal and performing digital phase-locking operation on the discrete time domain sequence of each pixel point, and the calculation formula is shown as follows
Wherein S is0And S90Are respectively homodromous and orthogonal signals, N is the number of points of the time domain signal, f (t)j) Is tjTime, value of a certain pixel, omegarIs the angular frequency of the reference signal, A and
amplitude and phase respectively.
b. The phase data is processed to obtain a phase image at the 20-Hz conditioning frequency, as shown in fig. 3 (a).
c. Exploiting relationships
The quasi-steady state equivalent carrier lifetime image at the excitation light intensity can be obtained from the phase image shown in fig. 3(a), as shown in fig. 3(b), wherein
For the measured phase, ω is the light intensity modulation angular frequency and τ is the equivalent carrier lifetime of the silicon wafer to be measured.
The method expands the traditional photoluminescence carrier life detection technology from single-point local measurement to space surface imaging, and develops the photoluminescence carrier imaging based on the CCD from a qualitative imaging technology into a quantitative imaging method, wherein the numerical value of each pixel point in the image has absolute physical significance and dimension, namely the equivalent life of the excess carrier of the semiconductor wafer, and the method can provide a non-contact, nondestructive, quantitative, rapid and online electrical quality imaging characterization method for a large-size semiconductor wafer production line.
Claims (9)
1. A rapid quantitative imaging characterization method for life-span spatial distribution of excess carriers of a semiconductor wafer is characterized by comprising the following steps: the signal generated by the function generator 1 is used for modulating the laser 2 to emit laser with light intensity changing in a sine way along with time, the laser passes through the beam collimation and beam expansion system 3 to form a large light spot with uniformly distributed light intensity to be incident on a semiconductor wafer sample 4, excess carriers with concentration changing in a sine way along with time are generated in the semiconductor wafer sample, the excess carriers are sampled and shot by a CCD5 through a dynamic image of a same-frequency sine fluorescence signal emitted by radiation recombination, a long pass filter 6 placed in front of a CCD5 lens filters excitation light emitted by the laser 2 and allows fluorescence to enter a CCD5, the shot dynamic image data are transmitted to a computer 7 with a frame grabber, the laser modulation signal is used as a reference signal, and the computer 7 performs digital phase-locking operation on discrete time domain data of all pixel points of the CCD5 to extract a phase image from noise; quantitative spatial distribution of the wafer excess carrier lifetime can be obtained by analyzing the phase image.
2. The method as claimed in claim 1, wherein the characterization method comprises: the frequency of the modulation signal generated by the function generator 1 should be low frequency, that is, it meets quasi-steady state approximate ω τ < <1, where ω is the light intensity modulation angular frequency, τ is the equivalent carrier lifetime of the silicon wafer to be measured, and simultaneously, the direct current component of the modulation signal should be much larger than the alternating current component, so that the laser light intensity is a small alternating current signal superimposed on a large direct current background.
3. The method as claimed in claim 1, wherein the characterization method comprises: the photon energy of the laser emitted by the laser 2 is larger than the forbidden bandwidth of the semiconductor wafer material to be tested, so that the excess carriers can be excited; meanwhile, the optical power of the laser should be high enough, the excitation light intensity of the whole wafer after the light spot expands the beam meets the requirement of carrier injection dosage, and the dosage requirement is determined by specific representation requirements.
4. The method as claimed in claim 1, wherein the characterization method comprises: after laser beams emitted from the laser 2 pass through the collimation and beam expansion system 3, large-size light spots with uniformly distributed light intensity are formed, so that uniform excitation on a semiconductor wafer sample can be realized, namely incident light intensity at each position of a wafer is consistent.
5. The method as claimed in claim 1, wherein the characterization method comprises: the photosensitive waveband of the CCD5 is selected as the fluorescent waveband of the semiconductor to be tested, which is generally a near-infrared CCD, and the CCD5 is placed on the back side of the wafer, i.e. the other side where the excitation light is located, so that the reflected light of the front surface of the wafer to the excitation light cannot reach the CCD5, and the long-pass filter 6 placed in front of the CCD5 can further filter the stray excitation light, so as to ensure that the image captured by the CCD is a pure fluorescent image.
6. The method as claimed in claim 1, wherein the characterization method comprises: the CCD5 has an external trigger function, the frame rate of which is adjustable and should satisfy the nyquist sampling theorem, that is, the frame rate is more than twice the laser modulation frequency, the shooting trigger sequence signal of the CCD5 is generated by the computer 7, and the synchronous control of the whole system is realized by the computer 7.
7. The method as claimed in claim 1, wherein the characterization method comprises: the overall duration of the image sequence obtained by the CCD5 should be an integral multiple of the laser modulation period, and in general, this condition is naturally satisfied when the laser modulation frequency is set to an integral multiple of 1Hz and the overall duration of the image sequence is selected to be an integral multiple of 1 s.
8. The method as claimed in claim 1, wherein the characterization method comprises: the computer 7 performs digital phase-locking operation on the discrete time domain signal of each pixel point of the image sequence by using the laser modulation signal as a reference signal, so that the obtained phase value of each pixel point forms a phase-locked phase image of the wafer at the adjustment frequency, wherein the phase is understood as the phase lag of the fluorescent signal relative to the same-frequency reference signal.
9. The method as claimed in claim 1, wherein the characterization method comprises: using formulas
Calculating an equivalent carrier lifetime image from the phase image, wherein tau is the equivalent carrier lifetime of the silicon wafer to be tested,
for phase, ω is the intensity modulation angular frequency, and the equivalent carrier lifetime is understood herein to be the overall recombination lifetime that integrates all of the excess carrier recombination events in the semiconductor wafer, such as bulk recombination, surface recombination, Shockley-Read-Hall recombination, radiative recombination, Auger recombination, etc.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113781487A (en) * | 2021-11-15 | 2021-12-10 | 浙江大学杭州国际科创中心 | Method and system for generating silicon carbide wafer surface recombination velocity image and storage medium |
| CN114235764A (en) * | 2021-12-07 | 2022-03-25 | 电子科技大学 | Quantitative imaging characterization method for surface recombination rate of semiconductor wafer current carrier |
| CN115219480A (en) * | 2022-09-01 | 2022-10-21 | 合肥锁相光学科技有限公司 | Phase-locked low-light-level microscopic imaging method and device |
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| CN105915179A (en) * | 2016-04-12 | 2016-08-31 | 哈尔滨工业大学 | Wafer and solar cell photoinduced carrier radiation phase lock imaging detection method and system |
| CN110940860A (en) * | 2019-12-25 | 2020-03-31 | 电子科技大学 | Optical method for measuring resistivity of silicon wafer in non-contact mode |
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| CN103901335A (en) * | 2014-04-22 | 2014-07-02 | 哈尔滨工业大学 | Infrared polarization optical imaging detecting method and system for service life distribution of minority carriers of semi-conductor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113781487A (en) * | 2021-11-15 | 2021-12-10 | 浙江大学杭州国际科创中心 | Method and system for generating silicon carbide wafer surface recombination velocity image and storage medium |
| CN114235764A (en) * | 2021-12-07 | 2022-03-25 | 电子科技大学 | Quantitative imaging characterization method for surface recombination rate of semiconductor wafer current carrier |
| CN115219480A (en) * | 2022-09-01 | 2022-10-21 | 合肥锁相光学科技有限公司 | Phase-locked low-light-level microscopic imaging method and device |
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