CN112415855B - OPC correction method and OPC correction device - Google Patents
OPC correction method and OPC correction device Download PDFInfo
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- CN112415855B CN112415855B CN201910777988.5A CN201910777988A CN112415855B CN 112415855 B CN112415855 B CN 112415855B CN 201910777988 A CN201910777988 A CN 201910777988A CN 112415855 B CN112415855 B CN 112415855B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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Abstract
The invention provides an OPC correction method and an OPC correction device. The OPC correction method comprises the following steps: dividing the edge of a mask pattern to form a plurality of segments; acquiring an origin in each segment according to a preset rule; respectively carrying out multiple circulation steps on each origin to obtain multiple overlapping areas corresponding to each origin; grouping the multiple origin points according to the matching degree of the overlapping areas among the origin points; correcting the segments of the original points in the same group by using the same compensation value; the circulating step includes: extending a preset distance outwards from the origin to form an evaluation graph which is symmetrical about the center of the origin; and acquiring the overlapping area between the evaluation graph and the mask pattern, and taking the whole evaluation graph as the origin of the next cycle. The invention greatly improves the OPC correction efficiency and saves the OPC correction time.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to an OPC correction method and an OPC correction apparatus.
Background
In a semiconductor lithography process, due to the diffraction Effect of ultraviolet light, when a pattern on a mask pattern is projected onto a wafer, the pattern formed on the surface of the wafer is often distorted, which is called Optical Proximity Effect (OPE). The pattern distortion Of the wafer surface caused by the optical proximity effect is mainly characterized by Line width feature size (CD) shift, Line End (EOL) shortening, pattern missing Or Bridging (Missed Patterns Or Rounding), Corner Rounding (Corner Rounding), and the like.
The mask pattern is appropriately modified to compensate for defects caused by Optical Proximity effects, so as to obtain the same pattern on the wafer surface as the original design pattern, which is called Optical Proximity Correction (OPC). However, the existing OPC correction method corrects the deviation between the simulated contour edge and the target shape section by section, which is cumbersome to operate, increases the OPC correction time, and reduces the production efficiency.
Therefore, how to improve the efficiency of OPC correction and reduce the time of OPC correction is a technical problem to be solved.
Disclosure of Invention
The invention provides an OPC correction method and an OPC correction device, which are used for solving the problems of complicated operation and long correction time of the conventional OPC correction so as to improve the photoetching efficiency of a semiconductor.
In order to solve the above problem, the present invention provides an OPC correction method, which includes the steps of:
dividing the edge of a mask pattern to form a plurality of segments;
acquiring an origin in each segment according to a preset rule;
respectively carrying out multiple circulation steps on each origin to obtain multiple overlapping areas corresponding to each origin;
grouping the multiple origin points according to the matching degree of the overlapping areas among the origin points;
correcting the segments of the original points in the same group by using the same compensation value;
the circulating step includes:
extending a preset distance outwards from the origin to form an evaluation graph which is symmetrical about the center of the origin;
and acquiring the overlapping area between the evaluation graph and the mask pattern, and taking the whole evaluation graph as the origin of the next cycle.
Optionally, the specific steps of forming the plurality of fragments include:
each edge of a mask pattern is divided equally to form a plurality of segments.
Optionally, the specific step of obtaining the origin in each segment according to a preset rule includes:
and acquiring the midpoint position of each segment, and taking the midpoint as an origin.
Optionally, the multiple overlapping areas corresponding to each origin are sequentially arranged from small to large; the specific steps of grouping a plurality of origins according to the matching degree of the overlapping areas between the origins include:
and judging whether the first plurality of overlapping areas of any two of the original points are the same or not, and if so, grouping the two original points into the same group.
Optionally, the multiple overlapping areas corresponding to each origin are sequentially arranged from small to large; the specific step of grouping the plurality of origins according to the matching degree of the overlapping areas between the origins comprises:
and judging whether all the overlapping areas of any two of the original points are the same or not, and if so, grouping the two original points into the same group.
Optionally, the shape of the evaluation graph is a regular polygon or a circle.
Optionally, the preset distance is 1nm to 10 nm.
In order to solve the above problem, the present invention further provides an OPC correcting apparatus comprising:
a dividing module for dividing the edge of a mask pattern to form a plurality of segments;
the acquisition module is connected with the segmentation module and used for acquiring an origin in each segment according to a preset rule;
the processing module is connected with the acquisition module and is used for respectively carrying out multiple circulation steps on each origin to acquire multiple overlapping areas corresponding to each origin;
the grouping module is connected with the processing module and used for grouping the origin points according to the matching degree of the overlapping areas among the origin points;
the correction module is connected with the grouping module and used for correcting the segments of the original points in the same group by using the same compensation value;
the circulating step includes:
extending a preset distance outwards from the origin to form an evaluation graph which is symmetrical about the center of the origin;
and acquiring the overlapping area between the evaluation graph and the mask pattern, and taking the whole evaluation graph as the origin of the next cycle.
Optionally, the dividing module is configured to equally divide each edge of a mask pattern to form a plurality of segments.
Optionally, the obtaining module is configured to obtain a midpoint position of each of the segments, and use the midpoint as an origin.
Optionally, the multiple overlapping areas corresponding to each origin are sequentially arranged from small to large;
the grouping module is used for judging whether the first plurality of overlapping areas of any two original points are the same or not, and if so, grouping the two original points into the same group.
Optionally, the multiple overlapping areas corresponding to each origin are sequentially arranged from small to large;
the grouping module is used for judging whether all the overlapping areas of any two original points are the same or not, and if so, grouping the two original points into the same group.
Optionally, the modification module includes:
the statistical unit is used for counting the number of the original points in each group;
and the correcting unit is connected with the counting unit and is used for correcting each group.
Optionally, the shape of the evaluation graph is a regular polygon or a circle.
Optionally, the preset distance is 1nm to 10 nm.
The OPC correcting method and the OPC correcting device provided by the invention have the advantages that the original point position of each segmented fragment is obtained by adopting a preset rule, a plurality of overlapping areas corresponding to each original point are obtained by adopting a circulating step, the original points are grouped according to the matching degree of the overlapping areas among the original points, so that the original points with the same or similar surrounding graphic environments are grouped into one group, and the fragments of the original points in the same group are corrected by adopting the same compensation value, namely group-by-group correction is realized.
Drawings
FIG. 1 is a flow chart of an OPC correction method in an embodiment of the present invention;
FIG. 2 is a flow chart of the loop steps in an embodiment of the present invention;
FIGS. 3A-3E are schematic diagrams of OPC correction in an embodiment of the present invention;
FIG. 4 is a block diagram of an OPC correction apparatus in accordance with an embodiment of the present invention.
Detailed Description
The following describes in detail embodiments of an OPC correction method and an OPC correction apparatus according to the present invention with reference to the drawings.
Fig. 1 is a flowchart of an OPC correction method according to an embodiment of the present invention, fig. 2 is a flowchart of a loop step according to an embodiment of the present invention, and fig. 3A to 3E are schematic diagrams of an OPC correction process according to an embodiment of the present invention. As shown in fig. 1, fig. 2, and fig. 3A to fig. 3E, the OPC correction method according to this embodiment includes the following steps:
in step S11, the edge of a mask pattern is divided into a plurality of segments.
In order to simplify the mask pattern segmentation operation and further improve the OPC correction efficiency, optionally, the specific step of forming a plurality of segments includes:
each edge of a mask pattern is divided equally to form a plurality of segments.
Fig. 3A is a schematic structural diagram of a mask pattern according to this embodiment. As shown in fig. 3A, the mask pattern has a plurality of mutually independent patterns, and only four mutually independent patterns in the mask pattern are shown in fig. 3A, each of the patterns being composed of a plurality of edges 30. The borderline in this embodiment is a straight line. Specifically, each edge of each graph in the mask pattern is divided, that is, a plurality of dividing lines 31 are provided on each edge 30 constituting each graph, so as to equally divide each edge 30 into a plurality of segments, for example, two dividing lines 31 are provided on an edge 30 of one graph in the mask pattern shown in fig. 3A, so as to divide the edge 30 into three segments with equal length, that is, a first segment S1, a second segment S2 and a third segment S3.
The skilled person can determine the number of edges segmented by one edge according to actual needs, for example, according to the length of the edge, the number and the length of segments segmented by different edges may be the same or different, and the skilled person can select the number and the length according to actual needs.
Step S12, obtaining an origin in each of the segments according to a preset rule.
The preset rule may also be set by a person skilled in the art according to actual needs, as long as the origin is obtained by using the same rule for all the segments divided in the mask pattern. In order to further simplify the OPC correcting step, optionally, the specific step of obtaining the origin in each segment according to a preset rule includes:
and acquiring the midpoint position of each segment, and taking the midpoint as an origin.
Specifically, each of the segments obtained by dividing in step S11 is a straight line segment, and the midpoint of the straight line segment is directly used as the origin, so that the OPC correction time can be further saved. For example, the midpoints of the three segments obtained by dividing the edge 30 in fig. 3A are respectively taken to obtain a first origin CP1, a second origin CP2 and a third origin CP3, which are in one-to-one correspondence with the first segment S1, the second segment S2 and the third segment S3.
Step S13, performing a plurality of loop steps for each origin point, respectively, to obtain a plurality of overlapping areas corresponding to each origin point.
The circulating step includes:
step S21, extending a preset distance from the origin outwards to form an evaluation graph which is symmetrical about the center of the origin;
step S22, acquiring an overlapping area between the evaluation pattern and the mask pattern, and taking the entire evaluation pattern as an origin of a next cycle.
The second origin CP2 will be described as an example. As shown in fig. 3B, in the first loop step, the predetermined distance D is extended toward the outer periphery of the second origin CP2 with the second origin CP2 as the center, a first evaluation pattern 32 which is centrosymmetric with respect to the second origin CP2 is formed, as shown in fig. 3C, and then the overlapping area between the first evaluation pattern 32 and the mask pattern is calculated as a first overlapping area 33 (a slant line filling portion in fig. 3D); in the second loop step, the whole of the first evaluation pattern 32 is used as a new second origin, the predetermined distance d is extended to the periphery of the new second origin CP2, a second evaluation pattern 34 which is centrosymmetric with respect to the new second origin CP2 is formed, as shown in fig. 3E, and then the overlapping area between the second evaluation pattern 34 and the mask pattern is calculated as a second overlapping area. And by analogy, the whole of the evaluation graph formed in the previous cycle is used as a new second origin in the next cycle step until a plurality of overlapping areas are obtained.
Optionally, the shape of the evaluation graph is a regular polygon or a circle.
Optionally, the preset distance is 1nm to 10 nm.
In the loop step, the specific shape of the evaluation pattern may be selected by a person skilled in the art according to actual needs, for example, in fig. 3B to 3D, the shape of the evaluation pattern is illustrated as a square. The smaller the preset distance is, the more accurate the subsequent grouping result is, and the better the final OPC correction effect is; the larger the preset distance is, the more time for OPC correction can be saved. In order to further reduce the time for OPC correction while improving the effect of OPC correction, the preset distance is more preferably 5 nm.
The number of cycles of the circulation step can be selected by those skilled in the art according to actual needs. For example, when the number of cycles is 20, the preset distance is 5nm, and the evaluation pattern is a square, the twentieth evaluation pattern obtained in the 20 th cycle step is a square having a side length of 100 nm.
In step S14, the plurality of origins are grouped according to the matching degree of the overlapping areas between the origins.
Table 1 is a plurality of overlap area tables corresponding to a plurality of origins, respectively, the mth overlap area indicating the overlap area obtained in the mth cycle step, and the nth origin indicating the nth origin obtained by division. In the circulation step, the next circulation step takes the whole of the evaluation pattern obtained in the previous circulation step as an origin, and therefore, the area of the evaluation pattern obtained in the next circulation step is larger than that of the evaluation pattern obtained in the previous circulation step. That is, as the loop step progresses, the overlapping areas sequentially increase.
TABLE 1 multiple overlap area tables corresponding to multiple origins respectively
In this embodiment, the overlapping area matching means that the overlapping areas obtained by the same cycle step between any two origins are equal or similar. Optionally, the multiple overlapping areas corresponding to each origin are sequentially arranged from small to large; the specific steps of grouping a plurality of origins according to the matching degree of the overlapping areas between the origins include:
and judging whether the first plurality of overlapping areas of any two of the original points are the same or not, and if so, grouping the two original points into the same group.
Specifically, since the optical proximity effect is mainly caused by phenomena such as diffraction of light, the optical proximity effect of a segment is more significant for a graph with a smaller distance from the segment where an origin is located, and therefore, by comparing the overlapping areas obtained in a plurality of previous circulation steps of any two origins, whether the graph environments around the two origins are the same can be determined, and whether the two origins can be grouped into the same group can be determined. The grouping formula requires a smaller number of overlapping areas to be compared and a smaller number of cycles to be performed, thereby contributing to further improving the efficiency of OPC correction.
For example, in table 1, if the first, second, third, and fourth overlapping areas of the first, third, and fifth origins are all equal, the first, third, and fifth origins may be grouped into a first group; if the first overlap area, the second overlap area, the third overlap area and the fourth overlap area of the second origin and the fourth origin are equal, the second origin and the fourth origin can be classified into a second group; and if the first overlapping area, the second overlapping area, the third overlapping area and the fourth overlapping area of the Nth origin are different from the first origin, the second origin, the third origin, the fourth origin and the fifth origin, the Nth origin is classified into a third group.
In other specific embodiments, in order to improve the grouping precision and further improve the OPC correction precision, a plurality of the overlapping areas corresponding to each of the origins are arranged in order from small to large; the specific step of grouping the plurality of origins according to the matching degree of the overlapping areas between the origins comprises:
and judging whether all the overlapping areas of any two of the original points are the same or not, and if so, grouping the two original points into the same group.
And step S15, correcting the segment where each origin is located in the same group by using the same compensation value.
Optionally, the specific step of correcting the segments in which the origins in the same group are located by using the same compensation value includes:
counting the number of the origins in each group;
and correcting each group in sequence from the most to the least according to the number of the original points contained in the group.
Specifically, a compensation value can be obtained for each group through multiple simulation tests, and then the same compensation value is used for correcting segments in which all the origins in the same group are located, that is, batch correction.
Furthermore, the present embodiment provides an OPC correction apparatus. Fig. 4 is a block diagram illustrating a structure of an OPC correcting apparatus according to an embodiment of the present invention, and a control method of the OPC correcting apparatus can be seen in fig. 1 to 2 and fig. 3A to 3E. As shown in fig. 1 to 2, 3A to 3E and 4, the OPC correcting apparatus according to the present embodiment includes:
a dividing module 40 for dividing an edge of a mask pattern to form a plurality of segments;
an obtaining module 41, connected to the segmenting module 40, configured to obtain an origin in each of the segments according to a preset rule;
a processing module 42, connected to the obtaining module 41, configured to perform multiple circulation steps on each of the origins respectively to obtain multiple overlapping areas corresponding to each of the origins;
a grouping module 43, connected to the processing module 42, for grouping the multiple origins according to the matching degree of the overlapping areas between the origins;
the correcting module 44 is connected to the grouping module 43 and is used for correcting the segments where the original points in the same group are located by using the same compensation value;
the circulating step includes:
extending a preset distance outwards from the origin to form an evaluation graph which is symmetrical about the center of the origin;
and acquiring the overlapping area between the evaluation graph and the mask pattern, and taking the whole evaluation graph as the origin of the next cycle.
Optionally, the dividing module 40 is configured to equally divide each edge of a mask pattern to form a plurality of segments.
Optionally, the obtaining module 41 is configured to obtain a midpoint position of each of the segments, and use the midpoint as an origin.
Optionally, the multiple overlapping areas corresponding to each origin are sequentially arranged from small to large;
the grouping module 43 is configured to determine whether the first overlapping areas of any two of the origins are the same, and if yes, group the two origins into the same group.
Optionally, the multiple overlapping areas corresponding to each origin are sequentially arranged from small to large;
the grouping module 43 is configured to determine whether all overlapping areas of any two of the origins are the same, and if yes, group the two origins into the same group.
Optionally, the modification module 44 includes:
a counting unit 441, configured to count the number of the origins in each group;
a correcting unit 442, connected to the counting unit 441, for correcting each group.
Optionally, the correcting unit 442 is configured to sequentially correct each group according to a sequence from a large number to a small number of the origins included in the group.
Optionally, the shape of the evaluation graph is a regular polygon or a circle.
Optionally, the preset distance is 1nm to 10 nm.
The OPC correction method and the OPC correction apparatus according to the present embodiment obtain the position of the origin of each segment after being divided by using the preset rule, obtain a plurality of overlapping areas corresponding to each of the origins by using the loop procedure, group the origins according to the matching degree of the overlapping areas between the origins, group the origins having the same or similar peripheral graphic environments into one group, and correct the segments in which the origins in the same group are located by using the same compensation value, that is, realize the group-by-group correction.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (15)
1. An OPC correction method is characterized by comprising the following steps:
dividing the edge of a mask pattern to form a plurality of segments;
acquiring an origin in each segment according to a preset rule;
respectively carrying out multiple circulation steps on each origin to obtain multiple overlapping areas corresponding to each origin;
grouping the multiple origin points according to the matching degree of the overlapping areas among the origin points;
correcting the segments of the original points in the same group by using the same compensation value;
the circulating step includes:
extending a preset distance outwards from the origin to form an evaluation graph which is symmetrical about the center of the origin;
and acquiring the overlapping area between the evaluation graph and the mask pattern, and taking the whole evaluation graph as the origin of the next cycle.
2. The OPC correction method of claim 1 wherein the step of forming a plurality of segments comprises:
each edge of a mask pattern is divided equally to form a plurality of segments.
3. The OPC correcting method of claim 1, wherein the step of obtaining the origin in each of the segments according to a predetermined rule comprises:
and acquiring the midpoint position of each segment, and taking the midpoint as an origin.
4. The OPC correction method of claim 1, wherein a plurality of the overlapping areas corresponding to each of the origins are arranged in order from smaller to larger; the specific steps of grouping a plurality of origins according to the matching degree of the overlapping areas between the origins include:
and judging whether the first plurality of overlapping areas of any two of the original points are the same or not, and if so, grouping the two original points into the same group.
5. The OPC correction method of claim 1, wherein a plurality of the overlapping areas corresponding to each of the origins are arranged in order from smaller to larger; the specific step of grouping the plurality of origins according to the matching degree of the overlapping areas between the origins comprises:
and judging whether all the overlapping areas of any two of the original points are the same or not, and if so, grouping the two original points into the same group.
6. The OPC correction method of claim 1, wherein the evaluation pattern has a shape of a regular polygon or a circle.
7. The OPC correction method of claim 1, wherein the predetermined distance is 1nm to 10 nm.
8. An OPC correction apparatus comprising:
a dividing module for dividing the edge of a mask pattern to form a plurality of segments;
the acquisition module is connected with the segmentation module and used for acquiring an origin in each segment according to a preset rule;
the processing module is connected with the acquisition module and is used for respectively carrying out multiple circulation steps on each origin to acquire multiple overlapping areas corresponding to each origin;
the grouping module is connected with the processing module and used for grouping the origin points according to the matching degree of the overlapping areas among the origin points;
the correction module is connected with the grouping module and used for correcting the segments of the original points in the same group by using the same compensation value;
the circulating step includes:
extending a preset distance outwards from the origin to form an evaluation graph which is symmetrical about the center of the origin;
and acquiring the overlapping area between the evaluation graph and the mask pattern, and taking the whole evaluation graph as the origin of the next cycle.
9. The OPC correction apparatus of claim 8 wherein the dividing module is adapted to equally divide each edge of a mask pattern to form a plurality of segments.
10. The OPC correction apparatus of claim 8 wherein the acquiring module is configured to acquire a midpoint position of each of the segments, with the midpoint as an origin.
11. The OPC correcting apparatus of claim 8 wherein a plurality of the overlapping areas corresponding to each of the origins are arranged in order from smaller to larger;
the grouping module is used for judging whether the first plurality of overlapping areas of any two original points are the same or not, and if so, grouping the two original points into the same group.
12. The OPC correcting apparatus of claim 8 wherein a plurality of the overlapping areas corresponding to each of the origins are arranged in order from smaller to larger;
the grouping module is used for judging whether all the overlapping areas of any two original points are the same or not, and if so, grouping the two original points into the same group.
13. The OPC correction apparatus of claim 8 wherein said correction module comprises: the statistical unit is used for counting the number of the original points in each group;
and the correcting unit is connected with the counting unit and is used for correcting each group.
14. The OPC correction apparatus of claim 8, wherein the evaluation pattern has a shape of a regular polygon or a circle.
15. The OPC correction apparatus of claim 8, wherein the predetermined distance is 1nm to 10 nm.
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| CN107797391A (en) * | 2017-11-03 | 2018-03-13 | 上海集成电路研发中心有限公司 | Optical adjacent correction method |
| CN110119061A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7707538B2 (en) * | 2007-06-15 | 2010-04-27 | Brion Technologies, Inc. | Multivariable solver for optical proximity correction |
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| CN101013271A (en) * | 2007-01-26 | 2007-08-08 | 浙江大学 | Method for correcting layering optical proximity effect |
| CN102122111A (en) * | 2011-03-20 | 2011-07-13 | 北京理工大学 | Pixel-based optimization method for optical proximity correction |
| CN107797391A (en) * | 2017-11-03 | 2018-03-13 | 上海集成电路研发中心有限公司 | Optical adjacent correction method |
| CN110119061A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
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