CN112415651B - Design and preparation method and system for radiation focusing of optical chip - Google Patents
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
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Abstract
The embodiment of the invention provides a design and preparation method and a system for radiation focusing of an optical chip, wherein the method comprises the following steps: depositing a cladding material with a preset thickness on the upper surface of the substrate to be used as a lower cladding of the optical waveguide; depositing a layer of optical waveguide material on the upper surface of the lower cladding layer to serve as an optical waveguide layer, wherein the optical waveguide layer comprises a transmitter structure, and the transmitter structure comprises a straight waveguide, a bent waveguide and a ring waveguide grating; and depositing a layer of cladding material on the optical waveguide layer comprising the emitter structure to serve as an upper cladding of the optical waveguide layer, thereby obtaining the emitter with optical chip radiation focusing. The embodiment of the invention realizes the radiation focusing effect of the optical chip by designing structures such as the waveguide, the emitter and the like in the optical chip, can realize the light focusing interconnection between different layers of the same chip or between different chips, is compatible with the traditional COMS process, and has simple manufacture and low large-scale processing production cost.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a design and preparation method and a system for radiation focusing of an optical chip.
Background
In recent years, with the rapid development of various industries, the industrial society has more and more urgent needs for high-precision technology, and due to the comprehensive layout in the fields of 5G, artificial intelligence, Internet of things and the like, the pace of the world of everything interconnection is faster and faster, so that higher requirements on the aspects of processing speed, power consumption and the like of a chip are met, and under the background, the optical chip is brought to great tendency in birth, popularization and application.
Currently, there is also an increasing research on optical chips, including two-dimensional and three-dimensional integrated silicon-based optical chips, etc. Optical chips are generally designed based on Silicon On Insulator (SOI) platforms, and their structures include optical waveguides, couplers, optical switches, resonators, transmitters, and so on. The design of the special structure in the optical waveguide can realize the focusing effect of light in the transmission process, thereby being beneficial to the mutual communication of the light among different structures in the chip. However, the advantages brought by the current focusing interconnection mode are only limited to the same layer of the same chip, if focusing interconnection between different layers of the same chip or between different chips is to be realized, an off-chip or off-layer focusing interconnection method is needed, and at the moment, a new problem which has to be solved is formed for optical interconnection between different layers of the same chip or between different chips.
Therefore, a method and system for designing and manufacturing a radiation focus of an optical chip are needed to solve the above problems.
Disclosure of Invention
Aiming at the problems in the prior art, the embodiment of the invention provides a design and preparation method and a system for radiation focusing of an optical chip.
In a first aspect, an embodiment of the present invention provides a method for designing and manufacturing a radiation focus of an optical chip, including:
depositing a cladding material with a preset thickness on the upper surface of the substrate to be used as a lower cladding of the optical waveguide;
depositing a layer of optical waveguide material on the upper surface of the lower cladding layer to serve as an optical waveguide layer, wherein the optical waveguide layer comprises a transmitter structure, and the transmitter structure comprises a straight waveguide, a bent waveguide and a ring waveguide grating;
and depositing a layer of cladding material on the optical waveguide layer comprising the emitter structure to serve as an upper cladding of the optical waveguide layer, thereby obtaining the emitter with optical chip radiation focusing.
Further, the substrate is made of a material with a surface on which silicon dioxide easily grows, a silicon material or a silicon dioxide material.
Further, the optical waveguide material is a material with a refractive index higher than that of a silicon dioxide material and with a light propagation characteristic, a silicon material or a silicon nitride material.
Further, the calculation formula of the total phase delay of the curved waveguide is as follows:
wherein Δ φ represents the total phase delay generated after light propagates in the curved waveguide; λ represents the wavelength at which light propagates in vacuum; n iseffRepresenting an effective refractive index of the curved waveguide; l represents the total length of the curved waveguide.
Further, the radius formula of the annular waveguide grating is as follows:
wherein n isdRepresenting the effective refractive index of the propagation medium after light has been coupled out of the annular waveguide grating; r isiDenotes the radius of the ith circular waveguide grating, f denotes the focal length, λ denotes the wavelength at which light propagates in vacuum, and N denotes a positive integer.
Further, the transmitter structure is specifically: the straight waveguide is connected with one end of a first annular waveguide grating, the other end of the first annular waveguide grating is connected with one end of a first curved waveguide, the other end of the first curved waveguide is connected with one end of a second annular waveguide grating, and the other end of the second annular waveguide grating is connected with one end of a second curved waveguide, so that under the condition that the total phase delay calculation formula and the radius formula are met, each annular waveguide grating and each curved waveguide are circularly and sequentially connected, and the transmitter structure is constructed.
Further, the cladding material comprises: a silica material, or any material having a refractive index lower than the optical waveguide material and having optical transparency.
In a second aspect, an embodiment of the present invention provides a design preparation system for optical chip radiation focusing, including:
the lower cladding construction module is used for depositing cladding material with preset thickness on the upper surface of the substrate to be used as a lower cladding of the optical waveguide;
the optical waveguide layer construction module is used for depositing a layer of optical waveguide material on the upper surface of the lower cladding layer to serve as an optical waveguide layer, the optical waveguide layer comprises a transmitter structure, and the transmitter structure comprises a straight waveguide, a bent waveguide and a ring waveguide grating;
and the upper cladding layer construction module is used for depositing a layer of cladding material on the optical waveguide layer comprising the emitter structure to serve as an upper cladding layer of the optical waveguide layer, so that the emitter with the optical chip radiation focusing is obtained.
According to the design and preparation method and system for radiation focusing of the optical chip, provided by the embodiment of the invention, by designing structures such as a waveguide and an emitter in the optical chip, the radiation focusing effect of the optical chip is realized, the light focusing interconnection between different layers of the same chip or between different chips can be realized, the design and preparation method and system are compatible with the traditional COMS process, the manufacturing is simple, the large-scale processing and production cost is low, and the design and preparation method and system can be applied to the fields of optical communication, optical interconnection, medical imaging, optical sensing and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic flow chart of a design and manufacturing method for radiation focusing of an optical chip according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an emitter device with a photonic chip radiation focus according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a design and preparation system for optical chip radiation focusing according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic flow chart of a design and preparation method for optical chip radiation focusing provided in an embodiment of the present invention, and as shown in fig. 1, an embodiment of the present invention provides a design and preparation method for optical chip radiation focusing, which is characterized by comprising:
In the embodiment of the present invention, the substrate is made of silicon (Si), and it should be noted that other materials may be used as the substrate in the embodiment of the present invention, and silicon dioxide (SiO) is easily grown on the surface of the substrate2) A film. Preferably, in the embodiment of the present invention, if SiO2The thin film layer is thick enough to directly serve as a substrate, thereby omitting the growth of SiO on the substrate layer2And (3) film processing.
And 102, depositing a layer of optical waveguide material on the upper surface of the lower cladding to serve as an optical waveguide layer, wherein the optical waveguide layer comprises an emitter structure, and the emitter structure comprises a straight waveguide, a bent waveguide and a ring waveguide grating.
In embodiments of the present invention, the optical waveguide material comprises a silicon material or silicon nitride (Si)3N4) And a material for constructing an optical waveguide layer for optical transmission by depositing a layer of an optical waveguide material on an upper surface of the lower cladding layer. Preferably, other materials having a higher refractive index than silicon dioxide and capable of propagating light may also be used.
Further, the transmitter structure is transferred to the optical waveguide layer by the existing semiconductor industry technology, and the transmitter structure includes a plurality of curved waveguides, curved waveguides and annular waveguide gratings, wherein one end of each of the curved waveguides and the annular waveguide gratings is connected to one end of a first annular waveguide grating, the other end of the annular waveguide grating is connected to one end of a first curved waveguide, and the other end of each of the curved waveguides is connected to one end of a next annular waveguide grating.
And 103, depositing a layer of cladding material on the optical waveguide layer comprising the emitter structure to serve as an upper cladding of the optical waveguide layer, so as to obtain the emitter with the optical chip radiation focusing.
In the embodiment of the invention, a layer of silica film is deposited on the basis of the optical waveguide layer of the existing transmitter structure to be used as an upper cladding layer of the optical waveguide layer and also used as a protective layer of the optical waveguide layer, so that the transmitter with the optical chip radiation focusing is designed and prepared.
The design and preparation method for the radiation focusing of the optical chip provided by the embodiment of the invention realizes the radiation focusing effect of the optical chip by designing structures such as the waveguide, the emitter and the like in the optical chip, can realize the light focusing interconnection between different layers of the same chip or between different chips, is compatible with the traditional COMS process, has simple manufacture and low large-scale processing production cost, and can be applied to the fields of optical communication, optical interconnection, medical imaging, optical sensing and the like.
On the basis of the above embodiment, the total phase delay of the curved waveguide is calculated by the following formula:
wherein Δ φ represents the total phase delay generated after light propagates in the curved waveguide; λ represents the wavelength at which light propagates in vacuum; n iseffRepresenting an effective refractive index of the curved waveguide; l represents the total length of the curved waveguide.
In the embodiment of the present invention, the design of the curved waveguide should satisfy that the total phase delay generated after light propagates in the waveguide is an integer multiple of 2 pi, that is, the formula needs to be satisfied:
on the basis of the above embodiment, the radius formula of the annular waveguide grating is as follows:
wherein n isdRepresenting the effective refractive index of the propagation medium after light has been coupled out of the annular waveguide grating; r isiDenotes the radius of the ith circular waveguide grating, f denotes the focal length, λ denotes the wavelength at which light propagates in vacuum, and N denotes a positive integer.
In the embodiment of the invention, the annular waveguide grating should satisfy the following conditions: after light is coupled out of the grating, the same initial phase or the initial phase difference is an integral multiple of 2 pi, and under the condition that the focal length f is fixed, when the light coupled out of the grating propagates to the focal length f in a medium, the phase delay caused in the whole propagation process of the light is an integral multiple of 2 pi, so that the radius of the annular waveguide grating satisfies the formula:
on the basis of the above embodiment, the transmitter structure specifically includes: the straight waveguide is connected with one end of a first annular waveguide grating, the other end of the first annular waveguide grating is connected with one end of a first curved waveguide, the other end of the first curved waveguide is connected with one end of a second annular waveguide grating, and the other end of the second annular waveguide grating is connected with one end of a second curved waveguide, so that under the condition that the total phase delay calculation formula and the radius formula are met, each annular waveguide grating and each curved waveguide are circularly and sequentially connected, and the transmitter structure is constructed.
On the basis of the above embodiment, the cladding material includes: a silica material, or any material having a refractive index lower than the optical waveguide material and having optical transparency.
Fig. 2 is a schematic structural diagram of an emitting device with an optical chip radiation focus according to an embodiment of the present invention, which can be referred to in fig. 2, and an emitting device with an optical chip radiation focus can be obtained by using the existing semiconductor process technology including cleaning, glue coating, pre-baking, exposing, developing, film hardening, etching, photoresist removing, film deposition, epitaxial growth, and the like through the steps of transferring a target device pattern (i.e., an emitter structure) for achieving the optical chip radiation focus onto an optical waveguide layer of an optical chip and finally completing deposition of a cladding layer on the optical waveguide.
Specifically, as shown in fig. 2, first, a clean silicon wafer is taken out as a substrate 1 and cleaned; then, on the basis of the cleaned substrate 1, growing a SiO2 thin film layer with the thickness of 5 microns, namely a lower cladding layer 2 of the optical waveguide, on the substrate 1 by an epitaxial growth technology; further, on the basis of the lower cladding layer 2, a 220 nm thick Si thin film layer is grown on the lower cladding layer 2 by an epitaxial growth technology to serve as an optical waveguide layer for transmitting light, namely, the Si thin film layer where the straight waveguide 3, the curved waveguide 4 and the annular waveguide grating 5 are located in the subsequent transmitter structure; then, by semiconductor process technologies such as cleaning, glue coating, pre-baking, exposure, development, film hardening, etching and photoresist removal, a target pattern to be processed (i.e. an emitter structure) is transferred onto an optical waveguide layer, and a required emitter device is obtained, wherein the emitter device comprises three parts, namely a straight waveguide 3, a curved waveguide 4 and an annular waveguide grating 5, wherein the annular waveguide grating 5 is required to ensure that the same initial phase or the initial phase difference is an integral multiple of 2 pi after the grating is optically coupled out, and in the embodiment of the present invention, the annular waveguide grating 5 is designed to satisfy the following conditions: 1.θ is 0 °, where θ is the exit angle of the annular waveguide grating 5; 2.
wherein ΛgrIs the period of the annular waveguide grating 5, λ is the wavelength at which light propagates in vacuum, neff,grAn effective refractive index of a grating region that is an annular waveguide; finally, a thin film of silicon dioxide (SiO2) is grown on the optical waveguide layer by epitaxial growth technique as the upper cladding layer 6 of the optical waveguide and also as the protective layer of the optical waveguide layer.
Fig. 3 is a schematic structural diagram of a design and preparation system for photonic crystal slab radiation focusing according to an embodiment of the present invention, and as shown in fig. 3, an embodiment of the present invention provides a design and preparation system for photonic crystal slab radiation focusing, which includes a lower cladding layer building module 301, an optical waveguide layer building module 302, and an upper cladding layer building module 303, where the lower cladding layer building module 301 is configured to deposit a predetermined thickness of cladding material on an upper surface of a substrate as a lower cladding layer of an optical waveguide; the optical waveguide layer constructing module 302 is used for depositing a layer of optical waveguide material on the upper surface of the lower cladding layer as an optical waveguide layer, wherein the optical waveguide layer comprises a transmitter structure, and the transmitter structure comprises a straight waveguide, a bent waveguide and a ring waveguide grating; the upper cladding layer constructing module 303 is used for depositing a layer of cladding material on the optical waveguide layer including the emitter structure, and the cladding material is used as an upper cladding layer of the optical waveguide layer to obtain the emitter with optical chip radiation focusing.
The design and preparation system for the radiation focusing of the optical chip provided by the embodiment of the invention realizes the radiation focusing effect of the optical chip by designing structures such as a waveguide, an emitter and the like in the optical chip, can realize the light focusing interconnection between different layers of the same chip or between different chips, is compatible with the traditional COMS process, has simple manufacture and low large-scale processing production cost, and can be applied to the fields of optical communication, optical interconnection, medical imaging, optical sensing and the like.
The system provided by the embodiment of the present invention is used for executing the above method embodiments, and for details of the process and the details, reference is made to the above embodiments, which are not described herein again.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (5)
1. A design and preparation method for radiation focusing of an optical chip is characterized by comprising the following steps:
depositing a cladding material with a preset thickness on the upper surface of the substrate to be used as a lower cladding of the optical waveguide;
depositing a layer of optical waveguide material on the upper surface of the lower cladding layer to serve as an optical waveguide layer, wherein the optical waveguide layer comprises a transmitter structure, and the transmitter structure comprises a straight waveguide, a bent waveguide and a ring waveguide grating;
the total phase delay calculation formula of the curved waveguide is as follows:
wherein Δ φ represents the total phase delay generated after light propagates in the curved waveguide; λ represents the wavelength at which light propagates in vacuum; n iseffRepresenting an effective refractive index of the curved waveguide; l represents the total length of the curved waveguide;
the radius formula of the annular waveguide grating is as follows:
wherein n isdRepresenting the effective refractive index of the propagation medium after light has been coupled out of the annular waveguide grating; r isiDenotes the radius of the ith circular waveguide grating, f denotes the focal length, λ denotes the wavelength at which light propagates in vacuum, and N denotes a positive integer;
the transmitter structure specifically is: the straight waveguide is connected with one end of a first annular waveguide grating, the other end of the first annular waveguide grating is connected with one end of a first curved waveguide, the other end of the first curved waveguide is connected with one end of a second annular waveguide grating, and the other end of the second annular waveguide grating is connected with one end of a second curved waveguide, so that under the condition that the total phase delay calculation formula and the radius formula are met, each annular waveguide grating and each curved waveguide are circularly and sequentially connected to construct the transmitter structure;
and depositing a layer of cladding material on the optical waveguide layer comprising the emitter structure to serve as an upper cladding of the optical waveguide layer, thereby obtaining the emitter with optical chip radiation focusing.
2. The design and preparation method of optical chip radiation focus according to claim 1, wherein the substrate is made of a material with a surface on which silicon dioxide is easily grown, a silicon material or a silicon dioxide material.
3. The method of claim 1, wherein the optical waveguide material is a material with a refractive index higher than that of silicon dioxide and with a property of propagating light, a silicon material or a silicon nitride material.
4. The design and preparation method of optical chip radiation focusing of claim 1, wherein the cladding material comprises: a silica material, or any material having a refractive index lower than the optical waveguide material and having optical transparency.
5. A design preparation system for optical chip radiation focusing, comprising:
the lower cladding construction module is used for depositing cladding material with preset thickness on the upper surface of the substrate to be used as a lower cladding of the optical waveguide;
the optical waveguide layer construction module is used for depositing a layer of optical waveguide material on the upper surface of the lower cladding layer to serve as an optical waveguide layer, the optical waveguide layer comprises a transmitter structure, and the transmitter structure comprises a straight waveguide, a bent waveguide and a ring waveguide grating;
the total phase delay calculation formula of the curved waveguide is as follows:
wherein Δ φ represents the total phase delay generated after light propagates in the curved waveguide; λ represents the wavelength at which light propagates in vacuum; n iseffRepresenting an effective refractive index of the curved waveguide; l represents the total length of the curved waveguide;
the radius formula of the annular waveguide grating is as follows:
wherein n isdRepresenting the effective refractive index of the propagation medium after light has been coupled out of the annular waveguide grating; r isiDenotes the radius of the ith circular waveguide grating, f denotes the focal length, λ denotes the wavelength at which light propagates in vacuum, and N denotes a positive integer;
the transmitter structure specifically is: the straight waveguide is connected with one end of a first annular waveguide grating, the other end of the first annular waveguide grating is connected with one end of a first curved waveguide, the other end of the first curved waveguide is connected with one end of a second annular waveguide grating, and the other end of the second annular waveguide grating is connected with one end of a second curved waveguide, so that under the condition that the total phase delay calculation formula and the radius formula are met, each annular waveguide grating and each curved waveguide are circularly and sequentially connected to construct the transmitter structure;
and the upper cladding layer construction module is used for depositing a layer of cladding material on the optical waveguide layer comprising the emitter structure to serve as an upper cladding layer of the optical waveguide layer, so that the emitter with the optical chip radiation focusing is obtained.
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