CN112415526A - Light emitting element, manufacturing method thereof, camera module and terminal - Google Patents
Light emitting element, manufacturing method thereof, camera module and terminal Download PDFInfo
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- CN112415526A CN112415526A CN201910775796.0A CN201910775796A CN112415526A CN 112415526 A CN112415526 A CN 112415526A CN 201910775796 A CN201910775796 A CN 201910775796A CN 112415526 A CN112415526 A CN 112415526A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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Abstract
The embodiment of the application discloses a light emitting element, a manufacturing method thereof, a camera module and a terminal, wherein the light emitting element comprises a light emitting element, a base body and a diffusion sheet, and the base body is fixedly connected with the light emitting element; the diffusion sheet is directly contacted and connected with the base body to form a closed cavity, the light emitting element is arranged in the closed cavity, and light emitted by the light emitting element passes through the diffusion sheet.
Description
Technical Field
The present disclosure relates to the field of electronic and information technologies, and in particular, to a light emitting device, a method for manufacturing the light emitting device, a camera module, and a terminal.
Background
Time of flight (TOF) is increasingly used in terminals, for example, the terminals may measure distances, perform three-dimensional modeling on objects, perform blurring of pictures, and perform motion sensing games through TOF cameras. The basic working principle of TOF is: the emitter emits modulated light, the modulated light is reflected after encountering an object, the receiver receives the reflected light, and the distance between the modulated light and the object is obtained by calculating the time difference or phase difference between the light emission and the reflection. However, the structural stability of the emitter in the related art is low, and for example, the elements of the emitter are easily detached from the emitter.
Disclosure of Invention
Embodiments of the present application are intended to provide a light emitting element, a method of manufacturing the same, a camera module, and a terminal, which solve the problem of low structural stability of an emitter in the related art.
The embodiment of the present application provides a light emitting element, the light emitting element includes:
a light emitting element;
the substrate is fixedly connected with the light-emitting element;
the diffusion sheet is directly contacted and connected with the base body to form a closed cavity, the light-emitting element is arranged in the closed cavity, and light emitted by the light-emitting element passes through the diffusion sheet.
In the scheme, the target surface of the base body is provided with a concave part, the target part of the target surface of the base body except the concave part is directly contacted and connected with the diffusion sheet, and the concave part and the diffusion sheet form the closed cavity;
the light-emitting element is fixedly connected with the concave part.
In the above aspect, the diffusion sheet includes:
a diffusion sheet body;
the diffusion sheet microstructure layer is arranged on one side, close to the base, of the diffusion sheet body; the size of the diffusion sheet microstructure layer is equal to the size of the cross section of the concave part, and the concave part and the diffusion sheet microstructure layer form the closed cavity.
In the above aspect, the light-emitting element includes:
one side of the first electrode is fixedly connected with the concave part;
a light generation layer disposed at the other side of the first electrode;
a second electrode disposed on a side of the light generation layer remote from the first electrode.
In the above aspect, the light generation layer includes:
a substrate layer disposed on the other side of the first electrode;
the first reflecting mirror layer is arranged on one side of the substrate layer far away from the first electrode;
the quantum well layer is arranged on one side, far away from the substrate layer, of the first reflecting mirror layer;
the current limiting layer is arranged on one side, away from the first reflecting mirror layer, of the quantum well layer;
a second mirror layer provided on a side of the current confinement layer away from the quantum well layer;
the isolation layer is arranged on one side, far away from the current limiting layer, of the second reflector layer; wherein the second electrode is disposed on a side of the isolation layer away from the second mirror layer.
In the above scheme, the base body includes a bottom wall and a side wall, and the bottom wall and the side wall form the recess;
accordingly, the light emitting element further includes:
a third electrode and a fourth electrode, both disposed on an outer surface of the bottom wall or an outer surface of the side wall;
wherein the third electrode is connected with the first electrode based on the substrate, and the fourth electrode is connected with the second electrode based on the substrate; the light emitting element may be connected to a circuit board through the third electrode and the fourth electrode.
The embodiment of the application provides a manufacturing method of a light emitting element, and the terminal comprises: the method comprises the following steps:
forming a substrate fixedly connected with the light-emitting element; the target surface of the substrate is provided with a concave part, and the light-emitting element is fixedly connected with the concave part;
forming a diffusion sheet on the base body, and enabling the diffusion sheet and the base body to be in direct contact connection to form a closed cavity; the closed cavity is internally provided with the light emitting element, and light emitted by the light emitting element passes through the diffusion sheet.
In the above scheme, the base body includes a bottom wall and a side wall, and the bottom wall and the side wall form the recess; the substrate for forming the fixed connection light-emitting element comprises:
forming the bottom wall;
the light-emitting element is fixedly connected to the inner surface of the bottom wall;
the side wall is formed in abutment with the bottom wall in a direction perpendicular to the bottom wall.
In the above aspect, the abutting the bottom wall in a direction perpendicular to the bottom wall to form the side wall includes:
depositing a first growth material on an edge region of the bottom wall fixedly connected to the light emitting element;
and controlling the first growth material to grow towards the diffusion sheet to form the side wall based on a crystal growth process.
In the scheme, the diffusion sheet comprises a diffusion sheet body and a diffusion sheet microstructure layer; the forming of the diffusion sheet on the base body, so that the diffusion sheet and the base body are directly contacted and connected to form a closed cavity, comprises:
forming an initial diffusion sheet;
forming a diffusion sheet microstructure layer in a first area of the initial diffusion sheet; wherein the size of the area is equal to the size of the cross-section of the recess;
disposing a second region of the initial diffuser sheet on a target surface of the base except for a target portion of the depression; the concave part and the diffusion sheet microstructure layer form the closed cavity; the second area and the first area are on a target plane of the initial diffusion sheet, and the second area is a partial area or a whole area of the target plane except the first area;
controlling the initial diffusion sheet to grow at least toward the base based on a crystal growth process to obtain the diffusion sheet body and integrate the second region and the target portion; wherein the diffusion sheet body has a crystal structure of the same type as that of the base body.
In the above aspect, the forming an initial diffusion sheet includes:
depositing a second growth material on the substrate;
and controlling the second growth material to grow to form the initial diffusion sheet based on a crystal growth process.
In the above aspect, the light-emitting element includes: a first electrode, a light generation layer, and a second electrode, the light emitting element being fixedly connected on an inner surface of the bottom wall, comprising:
forming the first electrode on the inner surface on the bottom wall;
forming the light generation layer on a side of the first electrode away from the bottom wall;
the second electrode is formed on a side of the light generation layer remote from the first electrode.
In the above scheme, the light generation layer includes a substrate layer, a first mirror layer, a quantum well layer, a current confinement layer, a second mirror layer, and an isolation layer; the forming the light generation layer on the side of the first electrode away from the bottom wall includes:
forming the substrate layer on the side of the first electrode away from the bottom wall;
forming the first mirror layer on the side of the substrate layer far away from the first electrode;
forming the quantum well layer on one side of the first reflector layer far away from the substrate layer;
forming the current confinement layer on a side of the quantum well layer away from the first mirror layer;
forming the second mirror layer on a side of the current confinement layer away from the quantum well layer;
forming an isolation layer on a side of the second mirror layer away from the current confinement layer;
accordingly, the forming of the second electrode on a side of the light generation layer remote from the first electrode comprises:
and forming the second electrode on one side of the isolation layer far away from the first electrode.
In the above aspect, after forming the diffusion sheet on the substrate and directly contacting and connecting the diffusion sheet and the substrate to form a closed cavity, the method further includes:
a third electrode and a fourth electrode are arranged on the outer surface of the bottom wall, or the third electrode and the fourth electrode are arranged on the outer surface of the side wall;
wherein the third electrode is connected with the first electrode based on the substrate, and the fourth electrode is connected with the second electrode based on the substrate; the light emitting element may be connected to a circuit board through the third electrode and the fourth electrode.
The embodiment of the application provides a camera module, which comprises any one of the light emitting elements.
The embodiment of the application provides a terminal, the terminal comprises the camera module.
The light emitting element, the manufacturing method thereof, the camera module and the terminal provided by the embodiment of the application are provided, wherein the light emitting element comprises a light emitting element, a base body and a diffusion sheet, and the base body is fixedly connected with the light emitting element; the diffusion sheet is directly contacted with the base body to form a closed cavity, a light emitting element is arranged in the closed cavity, and light emitted by the light emitting element passes through the diffusion sheet. Because diffusion piece and base member direct contact are connected, diffusion piece and base member are connected's stability height, and then the stability of light-emitting component is high.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting device according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another light emitting element provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of another light emitting device according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a light emitting device according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a light emitting device according to another embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a light emitting device according to yet another embodiment of the present disclosure;
fig. 7 is a schematic flowchart illustrating a method for fabricating a light emitting device according to an embodiment of the present disclosure;
fig. 8 is a schematic flow chart illustrating a manufacturing method of another light emitting device according to an embodiment of the present disclosure;
fig. 9 is a schematic flowchart of a method for manufacturing a light emitting device according to an embodiment of the present disclosure;
fig. 10 is a schematic structural diagram of a camera module according to an embodiment of the present disclosure;
fig. 11 is a schematic structural diagram of a terminal according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
It should be appreciated that reference throughout this specification to "an embodiment of the present application" or "an embodiment described previously" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in the embodiments of the present application" or "in the embodiments" in various places throughout this specification are not necessarily all referring to the same embodiments. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
It should be further noted that, in the embodiments of the present application, a side of the first object away from the second object may be understood as a side of the first object away from the second object. A third object on one side of the first object may or may not be physically connected to the first object, and each object may correspond to any of the structural members described below. In addition, in the manufacturing method of the light emitting element mentioned in the present specification, the order of performing the steps recited in the embodiments of the present application is not limited. It should also be noted that any step in the embodiments of the present application may be executed by a device independently, that is, when the device executes any step in the embodiments of the present application, the device may not depend on the execution of other steps.
The terminal market is competitive, and many manufacturers add TOF cameras to the terminals to increase the bright spots of the terminal products. The core module of TOF camera is the TOF module, and the TOF module includes infrared emission module, infrared receiving module and processing module, and infrared emission module is used for sending the infrared laser through the modulation, and infrared receiving module is used for receiving the infrared laser through the object reflection, and processing module is used for confirming the distance of TOF module and object based on the time of transmitting infrared laser and the time of receiving infrared laser, and then obtains the degree of depth information of object.
The infrared emission module mainly comprises a Vertical Cavity Surface Emitting Laser (VCSEL) light source array, a diffusion element and a light source substrate for fixing the light source array (the light source array in the embodiment of the application refers to the VCSEL light source array), wherein the VCSEL light source array can be fixed on the light source substrate in a lead mode or in a welding mode so as to be connected to a circuit board through the light source substrate, the light source array emits modulated pulse light and projects the modulated pulse light onto the diffusion element at a certain divergence angle, and the light passes through the diffusion element and is projected onto a uniform space object.
In a method for manufacturing an infrared emission module, a light source array and a light source substrate having a recess are obtained, the light source array is fixedly connected in the recess of the light source substrate, a diffusion element is obtained, and the diffusion element is disposed at an opening of the light source substrate through a packaging process (such as dispensing, welding or clamping, etc.) to seal the light source array. However, in this method of manufacturing the infrared emission module, the diffusion member is connected to the light source substrate by a packaging process, so that the diffusion member is easily detached from the light source substrate.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a light emitting device according to an embodiment of the present disclosure. The light emitting device 1 includes a light source substrate 11, and a diffusion element 12 fixedly connected to the light source substrate 11, the light source substrate 11 has a recess 111, the light source substrate 11 and the diffusion element 12 form a closed cavity to accommodate a light source array 13, and the light source substrate 11 is connected to a circuit board 15. In order to detect whether the diffusion element is detached from the light source substrate 11, the light source array 13 and the photodetector 14 (PD) may be provided on the recess portion 111 of the light source substrate 11, and the photodetector 14 determines whether the diffusion element is detached from the light source substrate 11 based on the emission time of the infrared laser light and the time of receiving the infrared laser light reflected by the diffusion element, however, the provision of the photodetector 14 can only detect whether the diffusion element is detached from the light source substrate 11, and cannot solve the problem of detachment of the diffusion element from the light source substrate 11.
It should be noted that, in the following embodiments, components having different reference numbers but the same names as those in the embodiment corresponding to fig. 1 may be the same components or different components.
In order to solve at least the above-mentioned problems, an embodiment of the present application provides a light emitting element, as shown in fig. 2, a light emitting element 2 including: light emitting element 21, base 22, and diffusion sheet 23.
The substrate 22 is fixedly connected with the light-emitting element 21; the diffusion sheet 23 and the base 22 are directly connected in contact with each other to form a closed chamber in which the light emitting element 21 is disposed, and light emitted from the light emitting element 21 passes through the diffusion sheet 23.
The light emitting element 2 may be an infrared emitting module for emitting modulated pulsed light. Further, the light Emitting element 21 may be a Vertical Cavity Surface Emitting Laser (VCSEL) light source array, or the light Emitting element 21 may be a VCSEL. The VCSEL light source array includes a plurality of VCSELs. For example, in one embodiment, N M VCSELs are disposed within the enclosed cavity to form an VCSEL light source array. N and M are both integers greater than 1. The light emitting element 21 may be a vertical cavity surface emitting laser of a top emission structure or a vertical cavity surface emitting laser of a bottom emission structure.
The substrate 22 is a basic material for manufacturing a circuit board, and can be selectively subjected to processing such as hole processing, electroless copper plating, electrolytic copper plating, or etching to obtain a desired circuit pattern.
The diffusion sheet 23 mainly functions to provide a uniform surface light source. In the present embodiment, the diffusion sheet 23 is flat in shape. In other embodiments, the diffusion sheet 23 may have a curved shape, such as a circular arc surface. The shape of the diffusion sheet 23 may be rectangular, circular or other shapes, and is not limited thereto.
A direct contact connection is to be understood as a direct contact and fixed connection. In the embodiment of the present application, the diffusion sheet 23 and the base 22 are directly connected in contact, and may include that the diffusion sheet 23 and the base 22 are integrally formed, that is, the diffusion sheet 23 and the base 22 form an integrally formed part. The integrally formed member is a non-assembled member. It should be understood that the integral molding and the non-integral molding are different manufacturing processes, and the integral molding means that the integral molding formed by the base 22 and the diffusion sheet 23 is obtained by one-step processing, for example, the material for manufacturing the base 22 and the material for manufacturing the diffusion sheet 23 are put into the apparatus, and the integral molding is obtained by one-step molding; the non-primary molding is obtained by two or more processes, for example, a material for preparing the base 22 and a material for preparing the diffusion sheet 23 are put into a device to obtain a molded diffusion sheet 23 and a molded base 22, and the molded diffusion sheet 23 and the molded base 22 are assembled by an assembly method such as dispensing, and the assembly obtained in this manner is a non-primary molded article.
In one embodiment, the diffusion sheet 23 and the base 22 may be integrally formed by forming the diffusion sheet 23 on the base 22, and specifically, growing the diffusion sheet 23 on the base 22. In another embodiment, the diffusion sheet 23 and the substrate 22 may be integrally formed by forming the substrate 22 on the diffusion sheet 23, and specifically, growing the substrate 22 on the diffusion sheet 23. Alternatively, the diffusion sheet 23 and the base 22 may be grown simultaneously to obtain an integral molding of the diffusion sheet 23 and the base 22. In the present embodiment, both the base 22 and the diffusion sheet 23 are silica crystals, that is, the crystal structures of the base 22 and the diffusion sheet 23 are the same. In other embodiments, substrate 22 and diffuser 23 may be different crystals, but the different crystals may partially merge under certain conditions. It is to be noted that the growth technique mentioned in the embodiments of the present application is a thin film growth technique, for example, growth by oxidation, and how to grow may be selected based on actual circumstances. However, the embodiment of the present application is not limited thereto, and the diffusion sheet 23 and the base 22 may be partially fused by other means to form a closed cavity.
In the embodiment of the present application, the light emitted from the light emitting element 21 may be directed to the diffusion sheet 23, that is, the optical axis of the light emitted from the light emitting element 21 is perpendicular to the diffusion sheet 23. In other embodiments, the optical axis of the light emitted from the light emitting elements 21 may not be perpendicular to the diffusion sheet 23.
The light emitting element provided by the embodiment of the application comprises a light emitting element, a base body and a diffusion sheet, wherein the base body is fixedly connected with the light emitting element; the diffusion sheet is directly contacted with the base body to form a closed cavity, a light emitting element is arranged in the closed cavity, and light emitted by the light emitting element passes through the diffusion sheet. Because diffusion piece and base member direct contact are connected, diffusion piece and base member are connected's stability height, and then the stability of light-emitting component is high.
Based on the foregoing embodiments, the present embodiment provides a light emitting element, as shown in fig. 3, a light emitting element 2 including: light emitting element 21, base 22, and diffusion sheet 23. The substrate 22 is fixedly connected with the light-emitting element 21; the diffusion sheet 23 and the base 22 are directly connected in contact with each other to form a closed chamber in which the light emitting element 21 is disposed, and light emitted from the light emitting element 21 passes through the diffusion sheet 23.
The object surface of the base body 22 is provided with a concave part 221, the object part of the object surface of the base body 22 except the concave part 221 directly contacts and is connected with the diffusion sheet 23, and the concave part 221 and the diffusion sheet 23 form a closed cavity; the light emitting element 21 is fixedly coupled to the inner surface of the recess 221. Alternatively, the light emitting element 21 may be located at the center of the recess 221.
The base 22 may include a bottom wall 222 and a side wall 223, the bottom wall 222 and the side wall 223 forming the recess 221. In the present embodiment, the side wall 223 is disposed perpendicular to the bottom wall 222. In other embodiments, the side wall 223 may be disposed obliquely to the bottom wall 222; that is, both the side wall 223 and the bottom wall 222 are disposed in different directions. Alternatively, the light emitting element 21 may be located at the center of the bottom wall 222.
It should be noted that the dashed lines in fig. 3 are only for facilitating understanding of the corresponding areas of the bottom wall 222 and the side wall 223, and in practical applications, the bottom wall 222 and the side wall 223 are directly abutted, and the bottom wall 222 and the side wall 223 are integrally formed, and there is no dividing line.
In the present embodiment, the light emitting element 21 may be grown on the inner surface of the bottom wall 222. In other embodiments, the light emitting element 21 may be attached to the inner surface of the bottom wall 222 by wire bonding or soldering.
The diffusion sheet 23 may include a diffusion sheet body 231 and a diffusion sheet micro-structure layer 232. The diffusion sheet micro-structure layer 232 is arranged on one side of the diffusion sheet body 231 close to the base 22; the size of the diffusion sheet micro-structure layer 232 is equal to the size of the cross section of the recess 221, and the recess 221 and the diffusion sheet micro-structure layer 232 form a closed cavity. Specifically, the diffuser micro-structured layer 232 has a size equal to the cross-section of the end of the inner surface of the side wall 223 remote from the bottom wall 222. In other embodiments, the diffuser micro-structure layer 232 may be disposed on the side of the diffuser body 231 away from the substrate 22, in which case, the diffuser micro-structure layer 232 may cover the entire surface of the diffuser body 231 away from the substrate 22.
The diffusion sheet micro-structure layer 232 may be a structure layer with a preset pattern on the diffusion sheet body 231, and the diffusion sheet 23 obtained by combining the diffusion sheet body 231 and the diffusion sheet micro-structure layer 232 enables light emitted by the light emitting element 21 to be uniformly projected through the diffusion sheet 23. The diffuser micro-structure layer 232 may be formed by etching the surface of the diffuser body 231.
The light emitting element 21 may include: a first electrode 211, a light generation layer 212, and a second electrode 213. One side of the first electrode 211 is fixedly connected to the inner surface of the recess 221; the light generation layer 212 is disposed at the other side of the first electrode 211; the second electrode 213 is disposed on a side of the light generation layer 212 remote from the first electrode 211.
In one possible embodiment, the first electrode 211, the light generation layer 212, and the second electrode 213 may be sequentially formed. Further, the first electrode 211, the light generation layer 212, and the second electrode 213 may be formed by growth in sequence. The first electrode 211 may be an N electrode and the second electrode 213 may be a P electrode, in this manner, the light emitting element 21 is a vertical cavity surface emitting laser of a top emission structure. In other embodiments, the first electrode 211 may be a P electrode and the second electrode 213 may be an N electrode, in such a manner that the light emitting element 21 is a vertical cavity surface emitting laser of a bottom emission structure.
It should be noted that the light emitting element 21 in the light emitting element 2 provided in fig. 2 and fig. 3 provided in the embodiment of the present application is abutted against or directly connected to the side wall 223, but the embodiment of the present application is not limited thereto, and the light emitting element 21 may have a gap with the side wall 223, and the size of the gap may be determined according to practical situations, and is not limited herein.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a light emitting device according to an embodiment of the present disclosure. The light-emitting element 21 may include a first electrode 211, a substrate layer 2121, a first mirror layer 2122, a quantum well layer 2123, a current confining layer 2124, a second mirror layer 2125, a spacer layer 2126, and a second electrode 213, which are sequentially stacked.
A substrate layer 2121 is disposed on the other side of the first electrode 211; wherein the first electrode 211 is connected between the substrate layer 2121 and the inner surface of the recess 221. Substrate layer 2121 can be a GaAs substrate layer 2121.
A first mirror layer 2122 is disposed on a side of substrate layer 2121 away from first electrode 211; the first mirror layer 2122 is an n-type Distributed Bragg Reflector (n-DBR) layer.
A quantum well layer 2123 is disposed on a side of the first mirror layer 2122 away from the substrate layer 2121; the material of the quantum well layer 2123 may be AlGaAs, GaAs, GaN, InGaN, InGaAs, InGaAsP, InGaAsN, InGaAlAs, or the like. The quantum well layer 2123 may also be referred to as a quantum well active layer, and the material of the quantum well layer 2123 may be selected according to the designed operating wavelength of the vcsel, and the embodiment of the present application is not particularly limited.
A current-limiting layer 2124 is disposed on the side of the quantum well layer 2123 away from the first mirror layer 2122; the current-confining layer 2124 comprises Al2O3Material layer region and in Al2O3A layer region of AlGaAs material or a layer region of InAlGaAs material in the center of the material layer region. The specific manufacturing method is that the periphery of the AlGaAs material layer or InAlGaAs material layer with the Al component larger than 90 percent is converted into Al by a wet oxidation process2O3A material layer region is produced.
The second mirror layer 2125 is disposed on the side of the current-confining layer 2124 away from the quantum well layer 2123; the second mirror layer 2125 is a p-type Distributed Bragg Reflector (p-DBR) layer.
The isolation layer 2126 is disposed on the side of the second mirror layer 2125 away from the current confinement layer 2124; wherein the second electrode 213 is arranged on a side of the isolation layer 2126 remote from the second mirror layer 2125.
Alternatively, the above-described substrate layer 2121, first mirror layer 2122, quantum well layer 2123, current-confining layer 2124, second mirror layer 2125, and isolation layer 2126 may be formed in this order. Further, the substrate layer 2121, the first mirror layer 2122, the quantum well layer 2123, the current confining layer 2124, the second mirror layer 2125, and the isolation layer 2126 may be grown in sequence.
Note that, although the light-emitting element 21 is fixed to the inner surface of the recess 221 by sequentially forming the layers, a vertical cavity surface emitting laser having a top emission structure is obtained by sequentially forming the substrate layer 2121, the first mirror layer 2122, the quantum well layer 2123, the current confinement layer 2124, the second mirror layer 2125, and the spacer layer 2126. When the vertical cavity surface emitting laser having a bottom emission structure is fixed to the recess 221, the recess 221 may be obtained by sequentially forming a P-electrode, an isolation layer 2126, a second mirror layer 2125, a current confinement layer 2124, a quantum well layer 2123, a first mirror layer 2122, a substrate layer 2121, and an N-electrode.
The embodiment of the present application is not limited thereto, and it is sufficient to directly obtain the already prepared light emitting element 21 and fix (fixing including but not limited to wire fixing, solder fixing, or wire and solder bonding fixing) the light emitting element 21 in the recess 221. For example, if the light emitting element 21 is a vertical cavity surface emitting laser with a top emission structure, the N-pole is fixed in the recess 221, and the light exit surrounded by the P-pole faces the diffusion sheet 23; if the light emitting element 21 is a vertical cavity surface emitting laser with a bottom emission structure, the P-pole is fixed in the recess 221, and the light exit surrounded by the N-pole faces the diffusion sheet 23.
It should be understood that in the drawings provided in the embodiments of the present application, only one light emitting element 21 is illustrated inside the light emitting element 2, but in practice, the light emitting element 2 should include a plurality of light emitting elements 21 inside, each of which is a vertical cavity surface emitting laser, the plurality of light emitting elements 21 forming a vertical cavity surface emitting laser light source array.
The embodiment of this application provides a light emitting component, has given light emitting component's specific structure, and light emitting component's simple structure, and because diffusion piece and base member direct contact are connected, diffusion piece and base member are connected's stability height, and then light emitting component's stability is high.
Based on the foregoing embodiments, the present embodiment provides another light emitting element, as shown in fig. 5 and fig. 6, and the light emitting element 2 may further include a third electrode 24 and a fourth electrode 25 on the basis of the light emitting element 2 provided in the embodiment corresponding to fig. 2 or 3. Wherein the third electrode 24 and the fourth electrode 25 are both disposed on the outer surface of the bottom wall 222 or the outer surface of the side wall 223.
In fig. 5, the third electrode 24 and the fourth electrode 25 are both disposed on the first outer surface of the bottom wall 222.
In fig. 6, the third electrode 24 and the fourth electrode 25 are both disposed on the second outer surface of the sidewall 223.
The third electrode 24 is connected with the first electrode 211 based on the substrate 22, and the fourth electrode 25 is connected with the second electrode 213 based on the substrate 22; the light emitting element 2 may be connected to the circuit board through the third electrode 24 and the fourth electrode 25.
Alternatively, the third electrode 24 and the fourth electrode 25 may be formed on the outer surface of the bottom wall 222 or the outer surface of the side wall 223. Further, the third electrode 24 and the fourth electrode 25 may be grown to be formed on the outer surface of the bottom wall 222 or the outer surface of the side wall 223.
The light emitting element provided by the embodiment of the application can supply power to the light emitting element based on the third electrode, the fourth electrode and the base body by arranging the third electrode and the fourth electrode. Further, based on the difference of the internal structure of the terminal or the limitation of the volume of the circuit board, the third electrode and the fourth electrode can be arranged on the outer surface of the bottom wall or the outer surface of the side wall, so that the flexibility of the terminal design is improved.
Based on the foregoing embodiments, an embodiment of the present application provides a method for manufacturing a light emitting device, which is applied to an apparatus, as shown in fig. 7, and includes:
step 301: forming a substrate fixedly connected with the light-emitting element.
The target surface of the substrate is provided with a concave part, and the light-emitting element is fixedly connected with the concave part.
The apparatus in the embodiments of the present application may be a manufacturing apparatus. For example, the manufacturing apparatus may include a thin film growth apparatus, and the specific type of the apparatus is not limited in this embodiment as long as the apparatus can implement the manufacturing method provided in this embodiment.
In one embodiment, the light emitting element may be fixedly attached to the substrate after the substrate is formed. For example, a complete substrate with a recess may be formed first, and the light emitting element may be fixedly connected to the recess. In another embodiment, the light emitting elements may be fixedly attached during the formation of the substrate.
Step 302: and forming a diffusion sheet on the substrate, so that the diffusion sheet and the substrate are directly contacted and connected to form a closed cavity.
Wherein, a light emitting element is arranged in the closed cavity, and light emitted by the light emitting element passes through the diffusion sheet.
The diffusion sheet may be formed on the base by crystal growth.
The mode of crystal growth may be a process in which a silicon crystal is grown into silicon dioxide. For example, in one embodiment, the third growth material may be obtained by oxidizing the third growth material, and the third growth material may have a silica content lower than that of the diffusion sheet, and/or a silicon content higher than that of the diffusion sheet. It should be noted that the growth referred to in the embodiments of the present application may be a directional growth or an anisotropic growth, which is not limited to this.
The embodiment of the present application does not limit the execution sequence of step 301 and step 302. For example, in one embodiment, step 301 may be performed first, and then step 302 may be performed, i.e., a diffusion sheet is formed based on growth of the substrate. In another embodiment, step 302 may be performed first, and then step 301 may be performed, i.e., the base is formed based on the diffuser growth. In yet another embodiment, steps 301 and 302 may be performed simultaneously or alternately, i.e., the substrate and the diffuser sheet may be grown simultaneously.
According to the manufacturing method of the light emitting element, the base body fixedly connected with the light emitting element is formed, the diffusion sheet is formed on the base body, the obtained light emitting element is formed step by step and is not obtained through assembly, the obtained light emitting element is integrally formed, the diffusion sheet and the base body are connected with each other stably, and the light emitting assembly obtained through the manufacturing method is high in stability.
Based on the foregoing embodiments, the present application provides another method for manufacturing a light emitting device, which is applied to a device. As shown in fig. 8, the method includes:
step 401: forming a bottom wall.
Forming the bottom wall may include: and obtaining a fourth growth material, and growing the fourth growth material to obtain the bottom wall. In another embodiment, forming the bottom wall may include: the bottom wall is directly accessed. Alternatively, the bottom wall may be rectangular, circular or other shape.
Step 402: the inner surface on the bottom wall is fixedly connected with the light-emitting element.
The light emitting element may include: a first electrode, a light generation layer and a second electrode. In one embodiment, step 402 may be implemented by the following steps a1 through A3:
step A1: a first electrode is formed on the inner surface of the bottom wall.
Step A2: and forming a light generation layer on the side of the first electrode far away from the bottom wall.
The light generation layer comprises a substrate layer, a first reflecting mirror layer, a quantum well layer, a current limiting layer, a second reflecting mirror layer and an isolation layer. Step a2 may be implemented by the following steps a21 to a 26:
step A21: a substrate layer is formed on a side of the first electrode remote from the bottom wall.
Step A22: a first mirror layer is formed on a side of the substrate layer remote from the first electrode.
Step A23: and forming a quantum well layer on one side of the first reflecting mirror layer far away from the substrate layer.
Step A24: a current confinement layer is formed on the quantum well layer on a side away from the first mirror layer.
Step A25: the second mirror layer is formed on the side of the current confinement layer away from the quantum well layer.
Step A26: and forming an isolation layer on the side of the second reflector layer far away from the current confinement layer.
Step A3: a second electrode is formed on the side of the light generation layer remote from the first electrode.
Wherein, the step A3 can be realized by the following step A31:
step A31: and forming a second electrode on the side of the isolation layer far away from the first electrode.
It is to be noted that, by forming the first electrode (N-pole), the substrate layer, the first mirror layer, the quantum well layer, the current confinement layer, the second mirror layer, the isolation layer, and the second electrode (P-pole) in this order on the bottom wall, the vertical cavity surface emitting laser of the top emission structure is formed on the bottom wall. If a vertical cavity surface emitting laser with a bottom emitting structure is to be formed, a P-pole, an isolation layer, a second mirror layer, a current limiting layer, a quantum well layer, a first mirror layer, a substrate layer and an N-pole can be sequentially formed on the bottom wall. It should be understood that the present embodiment only exemplifies a structural stacking manner of the light generation layer, and in other embodiments, the light generation layer may further include other layers, and the light generation may be further stacked in other manners as long as the stacking manner can realize the light emitting function, and is not limited thereto.
In another embodiment, step 402 may also be implemented by the following steps C1 to C2:
step C1: a light emitting element is obtained.
The light emitting elements may be vertical cavity surface emitting laser light source arrays. The acquisition light emitting element may be an already prepared array of light sources.
Step C2: the light emitting element is fixed on the bottom wall.
The light emitting element may be a vertical cavity surface emitting laser of a top emission structure, or may be a vertical cavity surface emitting laser of a bottom emission structure. Whatever the type of the light-emitting element, it is ensured that the light-emitting direction is directed away from the bottom wall when the light-emitting element is fixed to the bottom wall.
It is to be understood that, when the light emitting element is a vertical cavity surface emitting laser of a top emission structure, a first electrode (N-pole), a substrate layer, a first mirror layer, a quantum well layer, a current confinement layer, a second mirror layer, an isolation layer, and a second electrode (P-pole) are stacked in this order on the bottom wall. When the light emitting element is a vertical cavity surface emitting laser with a bottom emission structure, a P-pole, an isolation layer, a second mirror layer, a current confinement layer, a quantum well layer, a first mirror layer, a substrate layer and an N-pole are sequentially stacked on the bottom wall.
The light emitting element can be fixed on the bottom wall by a lead fixing mode, or fixed on the bottom wall by a welding mode, or fixed on the bottom wall by a lead and welding combination mode.
Step 403: and forming a side wall to obtain a substrate fixedly connected with the light-emitting element.
In an embodiment, step 403 may be implemented by the following steps D1 through D2.
Step D1: depositing a first growth material on an edge area of the inner surface of the bottom wall that fixedly connects the faces of the light emitting elements.
Step D2: and controlling the first growth material to grow towards the diffusion sheet to obtain the side wall based on the crystal growth process.
Step 404: and forming a diffusion sheet on the substrate, so that the diffusion sheet and the substrate are directly contacted and connected to form a closed cavity.
Wherein, a light emitting element is arranged in the closed cavity, and light emitted by the light emitting element passes through the diffusion sheet.
According to the manufacturing method of the light emitting element, the bottom wall is formed firstly, then the light emitting element is fixedly connected to the inner surface of the bottom wall, then the side wall grows on the basis of the bottom wall, and finally the diffusion sheet is formed on the side wall, so that the manufacturing method of the light emitting element is simple.
Based on the foregoing example, the present application provides a method for manufacturing a light emitting element, which is applied to an apparatus, in this embodiment, a diffuser of the light emitting element includes a diffuser body and a diffuser microstructure layer, as shown in fig. 9, and the method includes:
step 501: forming a substrate fixedly connected with the light-emitting element.
The target surface of the substrate is provided with a concave part, and the light-emitting element is fixedly connected with the concave part.
Step 502: an initial diffuser sheet is formed.
In an embodiment, step 502 may be implemented by the following steps E1 to E2:
step E1: depositing a second growth material on the substrate.
Step E2: and controlling the second growth material to grow to form the initial diffusion sheet based on the crystal growth process.
Step 503: and forming a diffusion sheet microstructure layer in a first area of the initial diffusion sheet.
Wherein the size of the one area may be equal to the size of the cross-section of the recess, in particular the size of the first area may be equal to the size of the cross-section of the inner surface of the side wall. In other embodiments, the size of the first region may be greater than or less than the size of the cross-section of the recess.
Step 504: and arranging a second area of the initial diffusion sheet on the target surface of the base except the target part of the concave part.
Wherein, the concave part and the diffusion sheet microstructure layer form a closed cavity. The second area and the first area are on the target plane of the initial diffusion sheet, and the second area is a partial area or a whole area of the target plane except the first area;
step 505: the initial diffuser is controlled to grow at least toward the base based on a crystal growth process to obtain a diffuser body and to integrate the second region with the target portion.
Wherein, the crystal structure type of the diffusion sheet body is the same as that of the base body.
The same type of crystal structure may indicate that the diffuser body and the matrix can be fused with each other. For example, in the embodiments of the present application, the components of the diffuser body and the base both include silica. In other embodiments, the diffuser body and the base may comprise different compositions, so long as they are capable of fusing, which may include physical or chemical fusion.
According to the manufacturing method of the light emitting element, the initial diffusion sheet is arranged on the base body, the initial diffusion sheet is continuously grown to obtain the diffusion sheet body, the diffusion sheet body and the base body can be integrated, the diffusion sheet body and the base body are connected through the integrally formed structure formed by the diffusion sheet body and the base body, and therefore the light emitting assembly obtained through the manufacturing method is high in stability.
It should be noted that the first growth material, the second growth material, the third growth material, and the fourth growth material mentioned in the embodiments of the present application may be growth materials having the same composition or growth materials having different compositions, and these growth materials have a common property that they all grow to increase their volume by an oxidation method, such as a thermal oxidation method.
The embodiment of the application does not limit the execution sequence of the steps 401 to 403 and the steps 502 to 505, that is, the device may execute the steps 401 to 403 first and then execute the steps 502 to 505; or executing steps 502-505 first and then executing steps 401-403; then, steps 401 to 403 and steps 502 to 505 are executed alternately, or steps 401 to 403 and steps 502 to 505 are executed simultaneously. For example, in one embodiment, the step of growing to obtain the sidewalls in step 403 and the step of growing to obtain the diffuser body in step 505 may be performed simultaneously. It should be understood that the apparatus may also execute the steps of the method for manufacturing the light emitting element according to other reasonable sequences, which is not limited by the embodiments of the present application.
Based on the foregoing embodiments, the present application provides a method for manufacturing a light emitting device, which is applied to a device, and in this embodiment, after steps 302, 404, or 505, the following step E may be further performed.
Step E: a third electrode and a fourth electrode are provided on the outer surface of the bottom wall.
Alternatively, after steps 302, 404 or 505, the following step F may also be performed:
step F: a third electrode and a fourth electrode are disposed on the outer surface of the sidewall.
The third electrode is connected with the first electrode based on the base body, and the fourth electrode is connected with the second electrode based on the base body; the light emitting element may be connected to the circuit board through the third electrode and the fourth electrode.
Whether the apparatus performs step E or step F, the apparatus may also perform a step of drawing a circuit pattern on the substrate before step E or F.
Based on the foregoing embodiments, the present application provides a camera module, and as shown in fig. 10, a camera module 3 may include the light emitting element 2 provided in any one of the embodiments corresponding to fig. 2 to 5.
Based on the foregoing embodiments, the present embodiment provides a terminal, as shown in fig. 11, the terminal 4 includes the above-described camera module 3.
Alternatively, the terminal 4 may be any device with graphics capturing capability, such as a mobile phone, a tablet computer, a laptop computer, a palmtop computer, a personal digital assistant, a portable media player, a smart speaker, a navigation device, a wearable device, a smart band, a pedometer, a digital TV, or a desktop computer. In the embodiment of the application, the terminal is a mobile phone.
The terminal provided by the embodiment of the application comprises a light-emitting element, a base body and a diffusion sheet, wherein the base body is fixedly connected with the light-emitting element; the diffusion sheet is directly contacted with the base body to form a closed cavity, a light emitting element is arranged in the closed cavity, and light emitted by the light emitting element passes through the diffusion sheet. Because diffusion piece and base member direct contact are connected, diffusion piece and base member are connected's stability height, and then the stability of light-emitting component is high.
Based on the foregoing embodiments, the present application provides an apparatus, which may include a processor and a memory connected to the processor, wherein the processor is configured to execute a computer program stored in the memory to implement the steps of the method for manufacturing any of the light emitting elements.
Based on the foregoing embodiments, the present application further provides a computer storage medium, in which a computer program is stored, where the computer program can be executed by a processor to implement the steps of the method for manufacturing any light emitting element.
The Processor or the Processing module may be at least one of an Application Specific Integrated Circuit (ASIC), a Digital Signal Processor (DSP), a Digital Signal Processing Device (DSPD), a Programmable Logic Device (PLD), a Field Programmable Gate Array (FPGA), a Central Processing Unit (CPU), a controller, a microcontroller, and a microprocessor. It is understood that the electronic device implementing the above-mentioned processor function may be other electronic devices, and the embodiments of the present application are not particularly limited.
The computer storage medium/Memory may be a Read Only Memory (ROM), a Programmable Read Only Memory (PROM), an Erasable Programmable Read Only Memory (EPROM), an Electrically Erasable Programmable Read Only Memory (EEPROM), a magnetic Random Access Memory (FRAM), a Flash Memory (Flash Memory), a magnetic surface Memory, an optical Disc, or a Compact Disc Read-Only Memory (CD-ROM); but may also be various terminals such as mobile phones, computers, tablet devices, personal digital assistants, etc., that include one or any combination of the above-mentioned memories.
In the several embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described device embodiments are merely illustrative, for example, the division of the unit is only a logical functional division, and there may be other division ways in actual implementation, such as: multiple units or components may be combined, or may be integrated into another system, or some features may be omitted, or not implemented. In addition, the coupling, direct coupling or communication connection between the components shown or discussed may be through some interfaces, and the indirect coupling or communication connection between the devices or units may be electrical, mechanical or other forms.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, that is, may be located in one place, or may be distributed on a plurality of network units; some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, all functional units in the embodiments of the present application may be integrated into one processing module, or each unit may be separately regarded as one unit, or two or more units may be integrated into one unit; the integrated unit can be realized in a form of hardware, or in a form of hardware plus a software functional unit. Those of ordinary skill in the art will understand that: all or part of the steps for implementing the method embodiments may be implemented by hardware related to program instructions, and the program may be stored in a computer readable storage medium, and when executed, the program performs the steps including the method embodiments; and the aforementioned storage medium includes: various media capable of storing program codes, such as a removable Memory device, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, and an optical disk.
The methods disclosed in the several method embodiments provided in the present application may be combined arbitrarily without conflict to obtain new method embodiments.
Features disclosed in several of the product embodiments provided in the present application may be combined in any combination to yield new product embodiments without conflict.
The features disclosed in the several method or apparatus embodiments provided in the present application may be combined arbitrarily, without conflict, to arrive at new method embodiments or apparatus embodiments.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (16)
1. A light emitting element, characterized in that the light emitting element comprises:
a light emitting element;
the substrate is fixedly connected with the light-emitting element;
the diffusion sheet is directly contacted and connected with the base body to form a closed cavity, the light-emitting element is arranged in the closed cavity, and light emitted by the light-emitting element passes through the diffusion sheet.
2. The light emitting element according to claim 1,
the target surface of the base body is provided with a concave part, the target part of the target surface of the base body except the concave part is directly contacted and connected with the diffusion sheet, and the concave part and the diffusion sheet form the closed cavity;
the light-emitting element is fixedly connected with the inner surface of the concave part.
3. The light emitting element according to claim 2, wherein the diffusion sheet comprises:
a diffusion sheet body;
the diffusion sheet microstructure layer is arranged on one side, close to the base, of the diffusion sheet body; the size of the diffusion sheet microstructure layer is equal to the size of the cross section of the concave part, and the concave part and the diffusion sheet microstructure layer form the closed cavity.
4. The light emitting element according to claim 2, wherein the light emitting element comprises:
one side of the first electrode is fixedly connected with the inner surface of the concave part;
a light generation layer disposed at the other side of the first electrode;
a second electrode disposed on a side of the light generation layer remote from the first electrode.
5. The light-emitting element according to claim 4, wherein the light-generating layer comprises:
a substrate layer disposed on the other side of the first electrode;
the first reflecting mirror layer is arranged on one side of the substrate layer far away from the first electrode;
the quantum well layer is arranged on one side, far away from the substrate layer, of the first reflecting mirror layer;
the current limiting layer is arranged on one side, away from the first reflecting mirror layer, of the quantum well layer;
a second mirror layer provided on a side of the current confinement layer away from the quantum well layer;
the isolation layer is arranged on one side, far away from the current limiting layer, of the second reflector layer; wherein the second electrode is disposed on a side of the isolation layer away from the second mirror layer.
6. The light emitting element according to any one of claims 2 to 5,
the base body comprises a bottom wall and a side wall, and the bottom wall and the side wall form the concave part;
accordingly, the light emitting element further includes:
a third electrode and a fourth electrode, both disposed on an outer surface of the bottom wall or an outer surface of the side wall;
wherein the third electrode is connected with the first electrode based on the substrate, and the fourth electrode is connected with the second electrode based on the substrate; the light emitting element may be connected to a circuit board through the third electrode and the fourth electrode.
7. A method of fabricating a light emitting device, the method comprising:
forming a substrate fixedly connected with the light-emitting element; the target surface of the substrate is provided with a concave part, and the light-emitting element is fixedly connected with the concave part;
forming a diffusion sheet on the base body, and enabling the diffusion sheet and the base body to be in direct contact connection to form a closed cavity; the closed cavity is internally provided with the light emitting element, and light emitted by the light emitting element passes through the diffusion sheet.
8. The method of claim 7, wherein the base includes a bottom wall and a side wall, the bottom wall and the side wall forming the recess; the substrate for forming the fixed connection light-emitting element comprises:
forming the bottom wall;
the light-emitting element is fixedly connected to the inner surface of the bottom wall;
the side wall is formed in abutment with the bottom wall in a direction perpendicular to the bottom wall.
9. The method of claim 8, wherein said abutting the bottom wall in a direction perpendicular to the bottom wall forms the side wall, comprising:
depositing a first growth material on an edge region of the bottom wall fixedly connected to the light emitting element;
and controlling the first growth material to grow towards the diffusion sheet to form the side wall based on a crystal growth process.
10. The method of any of claims 7 to 9, wherein the diffuser comprises a diffuser body and a diffuser micro-structured layer; the forming of the diffusion sheet on the base body, so that the diffusion sheet and the base body are directly contacted and connected to form a closed cavity, comprises:
forming an initial diffusion sheet;
forming a diffusion sheet microstructure layer in a first area of the initial diffusion sheet; wherein the first region has a dimension equal to a dimension of a cross-section of the recess;
disposing a second region of the initial diffuser sheet on a target surface of the base except for a target portion of the depression; the concave part and the diffusion sheet microstructure layer form the closed cavity; the second area and the first area are on a target plane of the initial diffusion sheet, and the second area is a partial area or a whole area of the target plane except the first area;
controlling the initial diffusion sheet to grow at least toward the base based on a crystal growth process to obtain the diffusion sheet body and integrate the second region and the target portion; wherein the diffusion sheet body has a crystal structure of the same type as that of the base body.
11. A method as recited in claim 10, wherein said forming a preliminary diffuser comprises:
depositing a second growth material on the substrate;
and controlling the second growth material to grow to form the initial diffusion sheet based on a crystal growth process.
12. The method of claim 8, wherein the light emitting element comprises: a first electrode, a light generation layer, and a second electrode, the light emitting element being fixedly connected on an inner surface of the bottom wall, comprising:
forming the first electrode on the inner surface on the bottom wall;
forming the light generation layer on a side of the first electrode away from the bottom wall;
the second electrode is formed on a side of the light generation layer remote from the first electrode.
13. The method of claim 12, wherein the light generating layer comprises a substrate layer, a first mirror layer, a quantum well layer, a current confinement layer, a second mirror layer, and an isolation layer; the forming the light generation layer on the side of the first electrode away from the bottom wall includes:
forming the substrate layer on the side of the first electrode away from the bottom wall;
forming the first mirror layer on the side of the substrate layer far away from the first electrode;
forming the quantum well layer on one side of the first reflector layer far away from the substrate layer;
forming the current confinement layer on a side of the quantum well layer away from the first mirror layer;
forming the second mirror layer on a side of the current confinement layer away from the quantum well layer;
forming an isolation layer on a side of the second mirror layer away from the current confinement layer;
accordingly, the forming of the second electrode on a side of the light generation layer remote from the first electrode comprises:
and forming the second electrode on one side of the isolation layer far away from the first electrode.
14. A method as recited in claim 12, wherein after forming a diffuser on the substrate, the diffuser and the substrate being joined in direct contact and forming a closed cavity, the method further comprises:
a third electrode and a fourth electrode are arranged on the outer surface of the bottom wall, or the third electrode and the fourth electrode are arranged on the outer surface of the side wall;
wherein the third electrode is connected with the first electrode based on the substrate, and the fourth electrode is connected with the second electrode based on the substrate; the light emitting element may be connected to a circuit board through the third electrode and the fourth electrode.
15. A camera module, characterized in that it comprises a light-emitting element according to any one of claims 1 to 6.
16. A terminal, characterized in that it comprises a camera module according to claim 15.
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