CN112410874A - Exhaust device of semiconductor-grade silicon single crystal furnace - Google Patents
Exhaust device of semiconductor-grade silicon single crystal furnace Download PDFInfo
- Publication number
- CN112410874A CN112410874A CN202011282707.8A CN202011282707A CN112410874A CN 112410874 A CN112410874 A CN 112410874A CN 202011282707 A CN202011282707 A CN 202011282707A CN 112410874 A CN112410874 A CN 112410874A
- Authority
- CN
- China
- Prior art keywords
- wall
- fixedly connected
- single crystal
- furnace
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Abstract
The invention discloses an exhaust device of a semiconductor-grade silicon single crystal furnace, which aims at the problem that the temperature in the single crystal furnace is easily distributed unevenly due to the fact that most of the existing exhaust devices are arranged in a one-way exhaust mode, and the quality of prepared monocrystalline silicon is poor. The wind-shield groove of the invention mixes the gas blocked in the rotation process in a certain space, then disperses near the mounting plate under the action of the splitter groove, and combines the action of the air pump, thus ensuring that the gas sucked from the air suction hole is the gas with uniformly mixed heat, avoiding uneven temperature around the quartz crucible in the furnace body and ensuring the stable preparation of the monocrystalline silicon.
Description
Technical Field
The invention relates to the technical field of exhaust of single crystal furnaces, in particular to an exhaust device of a semiconductor-grade silicon single crystal furnace.
Background
At present, monocrystalline silicon is a crystal with a basically complete lattice structure, is a good semiconductor material, has the purity of more than 99.9999999 percent, can be used for the production and deep processing and manufacturing of diode-level, rectifier device-level, circuit-level and solar cell-level monocrystalline products, and the subsequent products, namely integrated circuits and semiconductor separation devices, are widely applied to various fields, play an important role in military electronic equipment and are in the front of the development of new materials. A semiconductor grade silicon single crystal furnace is an important crystal growth apparatus in the single crystal silicon industry chain, and since a semiconductor grade silicon single crystal is slowly grown under a high temperature condition, a good temperature gradient control is required to form a cold center, and a uniform and stable temperature field is required to realize stable growth of the single crystal in a crucible. In the process of exhausting the crucible, the practical problems are that the heat taken away by the crucible exhaust easily causes disorder of thermal field in the crucible and uneven heat to influence the crystal growth quality, the crystal purity and the yield are low, and the production efficiency of high-purity silicon single crystals is seriously influenced. Monocrystalline silicon generally refers to a substance formed by an arrangement of silicon atoms. The conductivity of semiconductors is between that of conductors and insulators, silicon, germanium, gallium arsenide and cadmium sulfide are semiconductor materials, the resistivity of the semiconductor materials is reduced along with the increase of temperature and the increase of radiation intensity, and trace impurities are added into the semiconductors, so that the conductivity of the semiconductors is influenced decisively, and the important characteristics of the semiconductor materials are realized. Silicon is the most commonly used semiconductor material, and when molten elemental silicon solidifies, the silicon atoms are arranged in diamond lattices to form crystal nuclei, and the crystal nuclei grow into crystal grains with the same crystal plane orientation to form single crystal silicon.
The prior exhaust device of the semiconductor grade silicon single crystal furnace has the following problems: when the crucible is exhausted, the ordered flow direction of gas needs to be controlled well, the gas containing heat in the single crystal furnace can be exhausted under the condition of sufficient mixing, most of the existing exhaust devices are arranged in a one-way exhaust mode, the temperature in the single crystal furnace is easily distributed unevenly, and the quality of prepared monocrystalline silicon is poor.
Disclosure of Invention
Based on the exhaust device of the existing semiconductor-grade silicon single crystal furnace, the existing exhaust device is mostly in one-way exhaust arrangement, and the temperature distribution in the single crystal furnace is easy to be uneven, so that the technical problem of poor quality of prepared monocrystalline silicon is solved.
In order to achieve the purpose, the invention adopts the following technical scheme:
an exhaust device of a semiconductor-grade silicon single crystal furnace comprises a furnace body, wherein gas storage boxes distributed equidistantly are fixedly connected to the outer wall of the furnace body, the outer wall of one side adjacent to the two gas storage boxes is fixedly connected with the same connecting pipe, the outer wall of one side of the connecting pipe is fixedly connected with an air outlet pipe, the outer wall of one side of each gas storage box is fixedly connected with a connecting block, the outer wall of one side of each connecting block is fixedly connected with the same fixing ring, the inner wall of each fixing ring is provided with an annular chute, the inner wall of each annular chute is fixedly connected with an annular slide rail, the inner wall of each annular slide rail is slidably connected with a slide ring, the outer wall of one side of each slide ring is fixedly connected with a mounting plate distributed equidistantly, a gas bin is arranged inside each mounting plate, the outer wall of one side of each connecting block is provided with a first inclined, first inclined hole and second inclined hole looks adaptation, be equipped with the wind-break groove on one side outer wall of mounting panel, the wind-break groove sets up to the arc structure, be equipped with the splitter box that the equidistance distributes on one side outer wall of wind-break groove, the equal fixedly connected with equidistance of inner wall of splitter box distributes the suction opening.
As a still further scheme of the invention: the furnace is characterized in that a furnace cover is fixedly connected to the outer wall of the top of the furnace body, an upper furnace chamber is fixedly connected to the central position of the outer wall of the top of the furnace cover, and a hydrogen inlet pipe is fixedly connected to the outer wall of one side of the upper furnace chamber.
As a still further scheme of the invention: the upper furnace chamber is characterized in that a shunting box is fixedly connected to the outer wall of the top of the upper furnace chamber, and one end of an air outlet pipe is respectively and fixedly connected to the outer walls of the periphery of the shunting box.
As a still further scheme of the invention: an air pump is fixedly connected to the outer wall of the top of the flow distribution box, one end of the air pump is communicated with the inner wall of the top of the flow distribution box, and an air outlet of the air pump is fixedly connected with an air outlet hopper.
As a still further scheme of the invention: and the outer wall of the bottom of the furnace body is fixedly connected with supporting legs which are distributed equidistantly.
As a still further scheme of the invention: and a fixed plate is fixedly connected to the outer wall of one side of the furnace body close to the bottom end.
As a still further scheme of the invention: the top outer wall of the fixed plate is fixedly connected with a vacuum air pump, one end of the vacuum air pump is fixedly connected with a guide pipe, and one end of the guide pipe is fixedly connected inside the furnace body.
As a still further scheme of the invention: and the outer wall of the furnace body close to the bottom is provided with a heat insulation sleeve.
The invention has the beneficial effects that:
1. through the arrangement of the mounting plate, the wind-shielding groove and the splitter box, gas generated in the furnace body needs to be discharged in the process of preparing the monocrystalline silicon, the wind-shielding groove and the splitter box are arranged on one side of the rotating mounting plate under the driving of airflow, the wind-shielding groove is used for disordering the gas blocked in the rotating process in a certain space, and then the gas is dispersed nearby the mounting plate under the action of the splitter box, and the effect of the air suction pump is combined, so that the gas sucked from the air suction hole is the gas with uniformly mixed heat, the uneven temperature around the quartz crucible in the furnace body cannot be caused, and the stable preparation of the monocrystalline silicon is ensured;
2. the sliding ring is arranged on the furnace body, the sliding ring is arranged on the sliding ring, the sliding ring;
3. through setting up vacuum air pump and insulation cover, start the vacuum air pump earlier and extract to the vacuum state with the furnace body is inside, then heat the silicon solution in the quartz crucible in the furnace body, guarantee that the heat of the inside production of furnace body can not go out through the furnace body heat dissipation of solid, the inner wall that the furnace body is close to the top is equipped with the heat preservation and can completely cut off the heat on quartz crucible every side and can not scatter and disappear, install the insulation cover on the outer wall that the furnace body is close to the bottom, avoid the heat to scatter and disappear from the outer wall that the furnace body is close to the below, very big.
Drawings
FIG. 1 is a perspective view showing an embodiment 1 of an exhaust apparatus for a semiconductor-grade silicon single crystal furnace according to the present invention;
FIG. 2 is a schematic view showing a fixing ring according to embodiment 1 of an exhaust apparatus of a semiconductor-grade silicon single crystal furnace according to the present invention;
FIG. 3 is a schematic structural view of a mounting plate of embodiment 1 of an exhaust apparatus of a semiconductor-grade silicon single crystal furnace according to the present invention;
FIG. 4 is a schematic structural view of a gas storing box in embodiment 1 of an exhaust apparatus of a semiconductor-grade silicon single crystal furnace according to the present invention;
FIG. 5 is a schematic structural view of a slip ring in embodiment 1 of an exhaust apparatus of a semiconductor-grade silicon single crystal furnace according to the present invention;
FIG. 6 is a perspective view showing the structure of an exhaust apparatus of a semiconductor-grade silicon single crystal furnace according to embodiment 2 of the present invention.
In the figure: the device comprises 1 supporting leg, 2 gas storage boxes, 3 gas outlet pipes, 4 flow dividing boxes, 5 gas outlet hoppers, 6 air pumps, 7 upper furnace chambers, 8 furnace covers, 9 connecting pipes, 10 guide pipes, 11 vacuum air pumps, 12 mounting plates, 13 sliding rings, 14 fixing rings, 15 connecting blocks, 16 wind blocking grooves, 17 flow dividing grooves, 18 gas suction holes, 19 first inclined holes, 20 second inclined holes, 21 heat preservation sleeves, 22 furnace bodies and 23 fixing plates.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1
Referring to fig. 1-5, an exhaust apparatus of a semiconductor grade silicon single crystal furnace comprises a furnace body 22, gas storage boxes 2 distributed equidistantly are fixedly connected on the outer wall of the furnace body 22, the outer wall of one side adjacent to the two gas storage boxes 2 is fixedly connected with the same connecting pipe 9, an air outlet pipe 3 is fixedly connected on the outer wall of one side of the connecting pipe 9, a connecting block 15 is fixedly connected on the outer wall of one side of the gas storage boxes 2, the outer wall of one side of the connecting block 15 is fixedly connected with the same fixing ring 14, the inner wall of the fixing ring 14 is provided with an annular chute, the inner wall of the annular chute is fixedly connected with an annular slide rail, the inner wall of the annular slide rail is slidably connected with a slide ring 13, the outer wall of one side of the slide ring 13 is fixedly connected with a mounting plate 12 distributed equidistantly, a gas bin is arranged inside the mounting plate 12, the outer wall of one side of the, the first inclined hole 19 is matched with the second inclined hole 20, the outer wall of one side of the mounting plate 12 is provided with a wind blocking groove 16, the wind blocking groove 16 is of an arc structure, the outer wall of one side of the wind blocking groove 16 is provided with flow dividing grooves 17 which are distributed equidistantly, the inner walls of the flow dividing grooves 17 are fixedly connected with air suction holes 18 which are distributed equidistantly, air flow can drive the sliding ring 13 to slide in an annular sliding rail when air is sucked, the sliding ring 13 can drive the mounting plate 12 which is fixed on one side of the sliding ring 13 to rotate together, the wind blocking groove 16 and the flow dividing grooves 17 are arranged on one side of the rotating mounting plate 12, the air blocked in the rotating process is stirred in a certain space by the wind blocking groove 16 and then is dispersed near the mounting plate 12 under the action of the flow dividing grooves 17, and the air sucked from the air suction holes 18 is air with uniform heat mixing by combining the action of the air suction pump 6, the, the stable preparation of the monocrystalline silicon is ensured.
In the invention, the outer wall of the top of the furnace body 22 is fixedly connected with the furnace cover 8, the central position of the outer wall of the top of the furnace cover 8 is fixedly connected with the upper furnace chamber 7, and the outer wall of one side of the upper furnace chamber 7 is fixedly connected with a hydrogen inlet pipe.
In the invention, the outer wall of the top of the upper furnace cavity 7 is fixedly connected with the shunting box 4, and one end of the air outlet pipe 3 is respectively and fixedly connected with the peripheral outer wall of the shunting box 4.
In the invention, an air pump 6 is fixedly connected to the outer wall of the top of the flow distribution box 4, one end of the air pump 6 is communicated with the inner wall of the top of the flow distribution box 4, and an air outlet hopper 5 is fixedly connected to the air outlet of the air pump 6.
In the invention, the outer wall of the bottom of the furnace body 22 is fixedly connected with supporting legs 1 which are distributed equidistantly.
In the invention, a fixed plate 23 is fixedly connected to the outer wall of the furnace body 22 close to the bottom end.
In the invention, a vacuum air pump 11 is fixedly connected to the outer wall of the top of the fixing plate 23, one end of the vacuum air pump 11 is fixedly connected with a guide pipe 10, and one end of the guide pipe 10 is fixedly connected to the inside of the furnace body 22.
When the silicon solution heating furnace is used, the vacuum air pump 11 is started to pump the inside of the furnace body 22 to a vacuum state, then the silicon solution in the quartz crucible in the furnace body 22 is heated, in the process of preparing monocrystalline silicon, the gas generated in the furnace body 22 needs to be discharged, the air pump 6 is started, the air pump 6 pumps air from four different air outlet pipes 3 at the same speed under the action of the flow dividing box 4, the air outlet pipes 3 are connected to the connecting pipe 9, the connecting pipe 9 is fixed between the two gas storage boxes 2, during air pumping, air flow is distributed from the furnace body 22 and enters the air suction holes 18 on one side of the mounting plate 12 which are distributed at equal intervals, because the first inclined holes 19 on the connecting block 15 and the second inclined holes 20 which are distributed at equal intervals on the outer wall of the sliding ring 13 are in staggered fit, when air is sucked, the air flow can drive the sliding ring 13 to slide in the annular sliding rail, the sliding ring, the wind-shielding groove 16 and the splitter box 17 are arranged on one side of the rotating mounting plate 12, gas blocked in the rotating process is stirred in a certain space by the wind-shielding groove 16 and then dispersed near the mounting plate 12 under the action of the splitter box 17, and the effect of the air suction pump 6 is combined, so that the gas sucked from the air suction hole 18 is uniformly mixed with heat, the uneven temperature around the quartz crucible in the furnace body 22 is avoided, and the stable preparation of the monocrystalline silicon is ensured.
Example 2
Referring to fig. 6, an exhaust apparatus of a semiconductor grade silicon single crystal furnace comprises a furnace body 22, gas storage boxes 2 distributed equidistantly are fixedly connected on the outer wall of the furnace body 22, the same connecting pipe 9 is fixedly connected on the outer wall of one side adjacent to the two gas storage boxes 2, a gas outlet pipe 3 is fixedly connected on the outer wall of one side of the connecting pipe 9, a connecting block 15 is fixedly connected on the outer wall of one side of the gas storage boxes 2, the same fixing ring 14 is fixedly connected on the outer wall of one side of the connecting block 15, an annular chute is formed on the inner wall of the fixing ring 14, an annular slide rail is fixedly connected on the inner wall of the annular chute, a slide ring 13 is slidably connected on the inner wall of the annular slide rail, a mounting plate 12 distributed equidistantly is fixedly connected on the outer wall of one side of the slide ring 13, a gas bin is arranged inside the mounting plate 12, a first inclined hole 19 is formed on, the first inclined hole 19 and the second inclined hole 20 are matched, the wind blocking groove 16 is arranged on the outer wall of one side of the mounting plate 12, the wind blocking groove 16 is of an arc-shaped structure, the shunting grooves 17 distributed equidistantly are arranged on the outer wall of one side of the wind blocking groove 16, and the air suction holes 18 distributed equidistantly are fixedly connected to the inner wall of the shunting grooves 17.
In the invention, the outer wall of the top of the furnace body 22 is fixedly connected with the furnace cover 8, the central position of the outer wall of the top of the furnace cover 8 is fixedly connected with the upper furnace chamber 7, and the outer wall of one side of the upper furnace chamber 7 is fixedly connected with a hydrogen inlet pipe.
In the invention, the outer wall of the top of the upper furnace cavity 7 is fixedly connected with the shunting box 4, and one end of the air outlet pipe 3 is respectively and fixedly connected with the peripheral outer wall of the shunting box 4.
In the invention, an air pump 6 is fixedly connected to the outer wall of the top of the flow distribution box 4, one end of the air pump 6 is communicated with the inner wall of the top of the flow distribution box 4, and an air outlet hopper 5 is fixedly connected to the air outlet of the air pump 6.
In the invention, the outer wall of the bottom of the furnace body 22 is fixedly connected with supporting legs 1 which are distributed equidistantly.
In the invention, a fixed plate 23 is fixedly connected to the outer wall of the furnace body 22 close to the bottom end.
In the invention, a vacuum air pump 11 is fixedly connected on the outer wall of the top part of a fixing plate 23, one end of the vacuum air pump 11 is fixedly connected with a guide pipe 10, and one end of the guide pipe 10 is fixedly connected inside a furnace body 22
Compared with embodiment 1, the present embodiment further includes that a thermal insulation sleeve 21 is disposed on the outer wall of the furnace body 22 near the bottom.
When the quartz crucible furnace is used, the inner wall of the furnace body 22 close to the top is provided with the heat insulation layer which can isolate the heat around the quartz crucible from being dissipated, and the outer wall of the furnace body 22 close to the bottom is provided with the heat insulation sleeve 21 which can prevent the heat from being dissipated from the outer wall of the furnace body 22 close to the lower part.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (8)
1. An exhaust device of a semiconductor-grade silicon single crystal furnace comprises a furnace body (22) and is characterized in that gas storage boxes (2) which are distributed equidistantly are fixedly connected to the outer wall of the furnace body (22), the outer wall of one adjacent side of the two gas storage boxes (2) is fixedly connected with the same connecting pipe (9), an air outlet pipe (3) is fixedly connected to the outer wall of one side of the connecting pipe (9), a connecting block (15) is fixedly connected to the outer wall of one side of the gas storage boxes (2), the outer wall of one side of the connecting block (15) is fixedly connected with the same fixing ring (14), an annular sliding groove is formed in the inner wall of the fixing ring (14), an annular sliding rail is fixedly connected to the inner wall of the annular sliding groove, a sliding ring (13) is slidably connected to the inner wall of the annular sliding rail, and mounting plates (12) which are distributed equidistantly are, the inside of mounting panel (12) is equipped with the gas storehouse, it has first inclined hole (19) to open on one side outer wall of connecting block (15), opens second inclined hole (20) that have the equidistance and distribute on one side outer wall of sliding ring (13), first inclined hole (19) and second inclined hole (20) looks adaptation, be equipped with wind-break groove (16) on one side outer wall of mounting panel (12), wind-break groove (16) set up to the arc structure, be equipped with on one side outer wall of wind-break groove (16) splitter box (17) that the equidistance distributes, the equal fixedly connected with suction opening (18) that the equidistance distributes of inner wall of splitter box (17).
2. The exhaust device of a semiconductor grade silicon single crystal furnace according to claim 1, characterized in that a furnace cover (8) is fixedly connected to the outer wall of the top of the furnace body (22), an upper furnace chamber (7) is fixedly connected to the center of the outer wall of the top of the furnace cover (8), and a hydrogen inlet pipe is fixedly connected to the outer wall of one side of the upper furnace chamber (7).
3. The exhaust device of a semiconductor grade silicon single crystal furnace according to claim 2, characterized in that the outer wall of the top of the upper furnace chamber (7) is fixedly connected with a shunting box (4), and one end of the gas outlet pipe (3) is fixedly connected with the peripheral outer wall of the shunting box (4) respectively.
4. The exhaust device of the semiconductor-grade silicon single crystal furnace according to claim 3, wherein an air suction pump (6) is fixedly connected to the outer wall of the top of the shunting box (4), one end of the air suction pump (6) is communicated with the inner wall of the top of the shunting box (4), and an air outlet hopper (5) is fixedly connected to an air outlet of the air suction pump (6).
5. The exhaust device of a semiconductor grade silicon single crystal furnace according to claim 1, characterized in that the outer wall of the bottom of the furnace body (22) is fixedly connected with support legs (1) which are distributed at equal intervals.
6. The exhaust device of a semiconductor grade silicon single crystal furnace according to claim 5, characterized in that a fixing plate (23) is fixedly connected to the outer wall of the furnace body (22) on the side close to the bottom end.
7. The exhaust device of the semiconductor-grade silicon single crystal furnace according to claim 6, wherein a vacuum air pump (11) is fixedly connected to the outer wall of the top of the fixing plate (23), one end of the vacuum air pump (11) is fixedly connected with the guide pipe (10), and one end of the guide pipe (10) is fixedly connected to the inside of the furnace body (22).
8. The exhaust device of a semiconductor grade silicon single crystal furnace according to claim 1, characterized in that the outer wall of the furnace body (22) near the bottom is provided with a thermal insulating sleeve (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011282707.8A CN112410874B (en) | 2020-11-16 | 2020-11-16 | Exhaust device of semiconductor-grade silicon single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011282707.8A CN112410874B (en) | 2020-11-16 | 2020-11-16 | Exhaust device of semiconductor-grade silicon single crystal furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112410874A true CN112410874A (en) | 2021-02-26 |
| CN112410874B CN112410874B (en) | 2021-07-13 |
Family
ID=74832327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011282707.8A Active CN112410874B (en) | 2020-11-16 | 2020-11-16 | Exhaust device of semiconductor-grade silicon single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112410874B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000335992A (en) * | 1999-05-31 | 2000-12-05 | Mitsubishi Materials Silicon Corp | Method and apparatus for measuring gas in silicon single crystal growth unit |
| CN203559157U (en) * | 2013-10-29 | 2014-04-23 | 英利能源（中国）有限公司 | Bilateral exhaust device for ingot furnace |
| CN203923441U (en) * | 2014-06-20 | 2014-11-05 | 河北宁通电子材料有限公司 | The single crystal growing furnace of built-in gas barrier |
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
-
2020
- 2020-11-16 CN CN202011282707.8A patent/CN112410874B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000335992A (en) * | 1999-05-31 | 2000-12-05 | Mitsubishi Materials Silicon Corp | Method and apparatus for measuring gas in silicon single crystal growth unit |
| CN203559157U (en) * | 2013-10-29 | 2014-04-23 | 英利能源（中国）有限公司 | Bilateral exhaust device for ingot furnace |
| CN203923441U (en) * | 2014-06-20 | 2014-11-05 | 河北宁通电子材料有限公司 | The single crystal growing furnace of built-in gas barrier |
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112410874B (en) | 2021-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104805504B (en) | A kind of method of fast-growth large size silicon-carbide monocrystalline | |
| CN107723798B (en) | Growth device and method for efficiently preparing high-purity semi-insulating silicon carbide single crystal | |
| CN109722712B (en) | Method for uniformly doping SiC single crystal metal impurities | |
| US10519563B2 (en) | Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis | |
| CN104947182A (en) | Method for rapidly growing large-size high-purity semi-insulating silicon carbide single crystal | |
| CN109553105B (en) | High-purity silicon carbide powder and preparation method thereof | |
| WO2020224186A1 (en) | Ingot furnace for directional solidification growth of crystalline silicon and application | |
| KR20130114696A (en) | Method of manufacturing silicon single crystal, silicon single crystal, and wafer | |
| US20220307156A1 (en) | Single Crystal Pulling Apparatus Hot-Zone Structure, Single Crystal Pulling Apparatus and Crystal Ingot | |
| WO2018113013A1 (en) | Method for growing aluminium nitride monocrystal | |
| US20090288591A1 (en) | Crystal Growth Apparatus for Solar Cell Manufacturing | |
| CN217922435U (en) | Novel graphite crucible device capable of continuously growing silicon carbide crystals | |
| CN110129880A (en) | A kind of grower and growing method of low-carbon wrappage density SiC single crystal | |
| WO2019095632A1 (en) | Method for preparing semi-insulating silicon carbide single crystal | |
| CN108946735B (en) | Synthesis method of large-particle-size silicon carbide powder for silicon carbide crystal growth | |
| CN112410874B (en) | Exhaust device of semiconductor-grade silicon single crystal furnace | |
| CN114941174A (en) | Silicon carbide crystal growth device and filling method | |
| CN116575122B (en) | N-type silicon carbide crystal, preparation method and growth device | |
| CN117187960A (en) | Crucible for improving doping efficiency of large-size crystal and silicon carbide crystal doping method | |
| CN106591952A (en) | Preparation method of SiC wafer | |
| CN113716566A (en) | Preparation method of high-purity silicon carbide source powder | |
| CN109844185B (en) | Preparation method and preparation device of SiC raw material for growing SiC crystal | |
| US20010018892A1 (en) | Apparatus for fabricating single crystal | |
| PL238539B1 (en) | Method for producing a long silicon carbide crystals from gaseous phase | |
| CN112048769B (en) | Device for healing silicon carbide crystal micropipe and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |