CN112409759B - Preparation method and application of resin-based low-dielectric composite material - Google Patents
Preparation method and application of resin-based low-dielectric composite material Download PDFInfo
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- CN112409759B CN112409759B CN202011230545.3A CN202011230545A CN112409759B CN 112409759 B CN112409759 B CN 112409759B CN 202011230545 A CN202011230545 A CN 202011230545A CN 112409759 B CN112409759 B CN 112409759B
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/10—Encapsulated ingredients
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/504—Amines containing an atom other than nitrogen belonging to the amine group, carbon and hydrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/22—Expanded, porous or hollow particles
- C08K7/24—Expanded, porous or hollow particles inorganic
- C08K7/26—Silicon- containing compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
Abstract
The invention discloses a preparation method and application of a resin-based low-dielectric composite material, and relates to the technical field of composite materials.
Description
Technical field:
the invention relates to the technical field of composite materials, in particular to a preparation method and application of a resin-based low-dielectric composite material.
The background technology is as follows:
in recent years, dielectric materials have been widely used in the fields of capacitors, copper-clad plates, printed circuit boards, and the like. Conventionally, epoxy resins, polyimide resins, polytetrafluoroethylene and the like are commonly used as materials for printed circuit board substrates. The epoxy resin has the characteristics of relatively low price, easiness in processing and molding, high mechanical strength, high heat resistance, good electrical insulation and the like. However, with the rapid development of the microelectronics field, the dielectric properties of pure epoxy resin cannot meet the requirements of the current low dielectric materials, so that further reduction of the dielectric constant of epoxy resin-based materials is a problem to be solved.
Currently, the methods for reducing the dielectric constant of materials generally include two methods: (1) The chemical modification, namely, the incorporation of strong electronegative elements in the molecular structure firmly tie up electrons and reduce the polarity of the material. The common chemical modification method is to blend fluorine into the material to reduce the dielectric constant, but the method has the problems of complex operation, high cost and insignificant reduction effect. (2) Physical modification, namely, adding inorganic filler with a porous or hollow structure to reduce the density of the material and further reduce the dielectric constant, or adding low-dielectric polymer into epoxy resin to reduce the dielectric constant of the material, wherein the problem of uneven dispersion exists in a physical blending mode, so that the processability and mechanical property of the material are affected.
The invention comprises the following steps:
the invention aims to solve the technical problem of providing a preparation method of a resin-based low-dielectric composite material, which effectively reduces the dielectric constant and dielectric loss of the prepared composite material by combining physical modification and chemical modification, thereby strengthening the application performance of the composite material as a low-dielectric composite material.
The technical problems to be solved by the invention are realized by adopting the following technical scheme:
a preparation method of a resin-based low-dielectric composite material comprises the following preparation steps:
(1) Adding a curing agent into the epoxy resin, and stirring and mixing to obtain a material I;
(2) Under the anhydrous condition, adding 1-biphenyl carbonyl chloride and pyridine into the material I, heating for reaction, adding water and stirring after the reaction is completed, and taking an organic phase to obtain a material II;
(3) Adding the dried mesoporous silica into the material II, stirring and mixing, vacuumizing and removing bubbles to obtain a material III;
(4) And pouring the material III into a preheated die, and heating for two-stage curing to obtain the composite material.
The epoxy resin is bisphenol A type epoxy resin.
The curing agent is amino-terminated polyether.
The mass ratio of the epoxy resin to the curing agent is 10-30:30-60.
The mass ratio of the material I to the 1-biphenyl carbonyl chloride to the pyridine is 30-80:20-50:10-20.
The temperature of the heating reaction is 50-70 ℃.
The mass ratio of the material II to the mesoporous silica is 50-120:5-15.
The particle size of the mesoporous silica is 50-300nm.
The preheating temperature of the die is 60-80 ℃.
The two-stage curing conditions are that the first stage is to cure for 1-4 hours at 80-100 ℃ and the second stage is to cure for 0.5-2 hours at 100-120 ℃.
In the technical scheme, hydroxyl is introduced into a curing system formed by epoxy resin and a curing agent, the hydroxyl reacts with acyl chloride groups contained in a 1-biphenyl carbonyl chloride structure, and the modified epoxy resin is generated through connection of ester groups. The purpose of adding pyridine during the reaction is to neutralize hydrogen chloride generated in the step (2), the obtained pyridine hydrochloride is easy to dissolve in water, and is removed by water washing operation, and meanwhile, the reaction can be quenched by adding water.
The mesoporous silica is added to increase the formation of pores in the material and reduce the density of the material, the polarity of the prepared modified epoxy resin is obviously weakened, the compatibility with the mesoporous silica is improved, and the addition of a small amount of mesoporous silica can further reduce the dielectric constant of the material.
The technical scheme adopts a mode of combining chemical modification and physical modification, and the dielectric constant of the epoxy resin is effectively reduced, but the 1-biphenyl carbonyl chloride is unstable and has a severe requirement on reaction conditions, and meanwhile, pyridine has certain toxicity, so the technical problem to be solved by the invention can be realized by adopting the following technical scheme:
a preparation method of a resin-based low-dielectric composite material comprises the following preparation steps:
(1) Adding toluene, 4-acryloylmorpholine and an initiator into the dried mesoporous silica under stirring, heating to perform polymerization reaction, filtering after the reaction is completed, drying, washing with water, and drying again to obtain modified mesoporous silica;
(2) Adding the modified mesoporous silica into the epoxy resin, stirring and mixing, then adding the curing agent, stirring and mixing again, vacuumizing and removing bubbles to obtain a mixture;
(3) And pouring the mixture into a preheated mold, and heating for two-stage curing to obtain the composite material.
The particle size of the mesoporous silica is 50-300nm.
The mass ratio of the mesoporous silica to the 4-acryloylmorpholine is 10-20:20-50.
The initiator is azo initiator, and the dosage is 1-5% of the mass of the 4-acryloylmorpholine.
The reaction temperature of the polymerization reaction is 60-80 ℃ and the reaction time is 3-5h.
The epoxy resin is bisphenol A type epoxy resin.
The curing agent is amino-terminated polyether.
The mass ratio of the epoxy resin to the curing agent to the modified mesoporous silica is 10-30:30-60:10-30.
The preheating temperature of the die is 60-80 ℃.
The two-stage curing conditions are that the first stage is to cure for 1-4 hours at 80-100 ℃ and the second stage is to cure for 0.5-2 hours at 100-120 ℃.
According to the technical scheme, the 4-acryloylmorpholine is subjected to polymerization reaction under the action of the initiator to generate the acryloylmorpholine polymer wrapping the mesoporous silica, so that the density of the material can be reduced through the addition of the mesoporous silica, and the formed acryloylmorpholine polymer has a lower dielectric constant, so that the low dielectric property of the composite material is greatly optimized.
The resin-based low-dielectric composite material prepared by the two technical schemes has lower dielectric constant and lower dielectric loss, so that the resin-based low-dielectric composite material can be applied to printed circuit board substrate materials.
The beneficial effects of the invention are as follows: according to the invention, the epoxy resin is used as a resin base material, the application performance of the epoxy resin is improved by combining chemical modification and physical mixing, so that the novel resin-based low-dielectric composite material is prepared, has low dielectric constant and dielectric loss, and simultaneously has excellent mechanical properties, and can well meet the performance requirements of printed circuit board substrate materials.
The specific embodiment is as follows:
the invention is further described in connection with the following embodiments in order to make the technical means, the creation features, the achievement of the purpose and the effect of the invention easy to understand.
Example 1
(1) To 24g of bisphenol A type epoxy resin E-51, 45g of amine-terminated polyether D400 was added, and the mixture was stirred and mixed to obtain a material I.
(2) Under anhydrous condition, adding 38g of 1-biphenyl carbonyl chloride and 15g of pyridine into 62g of material I, heating to 60 ℃ for reaction for 5h, adding water and stirring after the reaction is completed, and taking an organic phase to obtain material II.
(3) And adding 10g of dried mesoporous silica (with the particle size of 50 nm) into 100g of the material II, stirring and mixing, and vacuumizing to remove bubbles to obtain the material III.
(4) 100g of material III was poured into a mold preheated to 70℃and heated for two-stage curing, the first stage being curing at 100℃for 2h and the second stage at 120℃for 1h, to give a composite.
Example 2
(1) To 24g of bisphenol A type epoxy resin E-51, 45g of amine-terminated polyether D400 was added, and the mixture was stirred and mixed to obtain a material I.
(2) Under anhydrous condition, 35g of 1-biphenyl carbonyl chloride and 15g of pyridine are added into 60g of material I, the mixture is heated to 60 ℃ to react for 5 hours, water is added and stirred after the reaction is completed, and an organic phase is taken out to obtain material II.
(3) And adding 12g of dried mesoporous silica (with the particle size of 50 nm) into 100g of the material II, stirring and mixing, and vacuumizing to remove bubbles to obtain the material III.
(4) 100g of material III was poured into a mold preheated to 70℃and heated for two-stage curing, the first stage being curing at 100℃for 2h and the second stage at 120℃for 1h, to give a composite.
Example 3
(1) Toluene, 30g of 4-acryloylmorpholine and 1g of azobisisobutyronitrile are added into 12g of dried mesoporous silica (particle diameter of 50 nm) under stirring, and the mixture is heated to 70 ℃ for polymerization reaction for 4 hours, and after the reaction is finished, the mixture is filtered, dried, washed and dried again to obtain the modified mesoporous silica.
(2) 22g of modified mesoporous silica is added into 24g of bisphenol A type epoxy resin E-51, stirred and mixed, 45g of amino-terminated polyether D400 is added, stirred and mixed again, and vacuumized to remove bubbles, so as to obtain a mixture.
(3) 100g of the mixture was poured into a mold preheated to 70℃and heated for two-stage curing, the first stage being curing at 100℃for 2 hours and the second stage at 120℃for 1 hour, to give a composite material.
Comparative example 1
Comparative example 1 differs from example 2 in that no chemical modification was performed with 1-biphenylcarbonyl chloride.
(1) To 24g of bisphenol A type epoxy resin E-51, 45g of amine-terminated polyether D400 was added, and the mixture was stirred and mixed to obtain a material I.
(2) And adding 12g of dried mesoporous silica (with the particle size of 50 nm) into 100g of the material I, stirring and mixing, and vacuumizing to remove bubbles to obtain a material II.
(3) 100g of material II is poured into a mould preheated to 70 ℃, and is heated for two-stage curing, wherein the first stage is to cure for 2 hours at 100 ℃, and the second stage is to cure for 1 hour at 120 ℃ to obtain the composite material.
Comparative example 2
Comparative example 2 differs from example 3 in that the polymerization was carried out without 4-acryloylmorpholine.
(1) 22g of dried mesoporous silica is added into 24g of bisphenol A epoxy resin E-51, stirred and mixed, 45g of amino-terminated polyether D400 is added, stirred and mixed again, and vacuumized to remove bubbles, so as to obtain a mixture.
(2) 100g of the mixture was poured into a mold preheated to 70℃and heated for two-stage curing, the first stage being curing at 100℃for 2 hours and the second stage at 120℃for 1 hour, to give a composite material.
By the arrangement of the embodiment and the comparison example, a blank comparison test which only has the chemical modification and the physical modification is formed, so that the technical effect obtained by the technical scheme of the invention is objectively reflected by combining the performance test data of the finally manufactured composite material.
The material II prepared in step (2) of example 1 above was subjected to infrared spectroscopic analysis, and the analysis structure showed characteristic peaks of c=o and c—o having an ester group, indicating that a biphenyl structure was grafted on the epoxy resin by reaction.
The composite materials prepared in the above examples and comparative examples were tested for dielectric constant and dielectric loss according to GB/T31838.1-2015 and tensile strength and elongation at break according to GB/T1040-2018. The test was performed in parallel for 6 times and the average was taken.
The test results are shown in Table 1.
TABLE 1
From table 1 above, it can be seen that the dielectric constant and dielectric loss of the composite material can be significantly reduced by chemical modification and physical modification of the epoxy resin, and the mechanical properties can not be reduced, thereby preparing the high-performance resin-based low-dielectric composite material.
The foregoing has shown and described the basic principles and main features of the present invention and the advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A preparation method of a resin-based low-dielectric composite material is characterized by comprising the following steps of: the preparation method comprises the following preparation steps:
(1) Adding a curing agent into the epoxy resin, and stirring and mixing to obtain a material I;
(2) Under the anhydrous condition, adding 1-biphenyl carbonyl chloride and pyridine into the material I, heating for reaction, adding water and stirring after the reaction is completed, and taking an organic phase to obtain a material II;
(3) Adding the dried mesoporous silica into the material II, stirring and mixing, vacuumizing and removing bubbles to obtain a material III;
(4) Pouring the material III into a preheated mold, and heating to perform two-stage curing to obtain a composite material;
the curing agent is amino-terminated polyether.
2. The method for preparing a resin-based low dielectric composite material according to claim 1, wherein: the epoxy resin is bisphenol A type epoxy resin.
3. The method for preparing a resin-based low dielectric composite material according to claim 1, wherein: the mass ratio of the epoxy resin to the curing agent is 10-30:30-60.
4. The method for preparing a resin-based low dielectric composite material according to claim 1, wherein: the mass ratio of the material I to the 1-biphenyl carbonyl chloride to the pyridine is 30-80:20-50:10-20.
5. The method for preparing a resin-based low dielectric composite material according to claim 1, wherein: the temperature of the heating reaction is 50-70 ℃.
6. The method for preparing a resin-based low dielectric composite material according to claim 1, wherein: the mass ratio of the material II to the mesoporous silica is 50-120:5-15.
7. The method for preparing a resin-based low dielectric composite material according to claim 1, wherein: the particle size of the mesoporous silica is 50-300nm.
8. The method for preparing a resin-based low dielectric composite material according to claim 1, wherein: the preheating temperature of the die is 60-80 ℃.
9. The method for preparing a resin-based low dielectric composite material according to claim 1, wherein: the two-stage curing conditions are that the first stage is to cure for 1-4 hours at 80-100 ℃ and the second stage is to cure for 0.5-2 hours at 100-120 ℃.
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