CN112397594A - Photoelectric detector and manufacturing method thereof - Google Patents
Photoelectric detector and manufacturing method thereof Download PDFInfo
- Publication number
- CN112397594A CN112397594A CN202011218910.9A CN202011218910A CN112397594A CN 112397594 A CN112397594 A CN 112397594A CN 202011218910 A CN202011218910 A CN 202011218910A CN 112397594 A CN112397594 A CN 112397594A
- Authority
- CN
- China
- Prior art keywords
- layer
- pole
- photoelectric detector
- resistor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 239000003990 capacitor Substances 0.000 claims abstract description 51
- 238000009792 diffusion process Methods 0.000 claims abstract description 29
- 241001272720 Medialuna californiensis Species 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 68
- 229920005591 polysilicon Polymers 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000007769 metal material Substances 0.000 claims description 32
- 230000003287 optical effect Effects 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 25
- 238000010521 absorption reaction Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 239000007772 electrode material Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 29
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 238000001914 filtration Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 230000002238 attenuated effect Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention relates to the technical field of semiconductor integrated circuits, and provides a photoelectric detector and a manufacturing method thereof. The photoelectric detector region comprises a half-moon annular N + diffusion region connected with the N pole, an annular P + diffusion region connected with the P pole and a light receiving region; the semi-lunar annular n + diffusion region is arranged at a position with a specified distance from the outer ring of the annular p + diffusion region; the resistance area comprises a resistor and an R pole, wherein two ends of the resistor are respectively connected with the R pole and the N pole of the photoelectric detector; the R pole is used for connecting a pin VAPD for supplying power to the photoelectric detector; and the N pole of the photoelectric detector is also used for completing grounding by the other end of the first capacitor after being connected with the first capacitor so as to filter the input power supply signal of the pin VAPD. The invention solves the problem that the light receiving sensitivity of the 10G access terminal equipment is obviously degraded due to 5G WiFi crosstalk.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of semiconductor integrated circuits, in particular to a photoelectric detector and a manufacturing method thereof.
[ background of the invention ]
With the popularization and application of broadband services such as electronic commerce, 4K/8K videos, internet of things, cloud computing and the like and the gradual rise of ultra-wideband services such as unmanned intelligent driving, Virtual Reality (VR), Artificial Intelligence (AI), smart cities and the like, companies such as operators, internet and the like are greatly promoted to actively upgrade the existing network equipment so as to meet the requirements of emerging services on ultra-wideband, ultra-large capacity, low delay and the like.
For example, in terms of access networks, technological innovations ranging from telephone line access (Kbps rate), to copper line access (Mbps rate), to fiber access (Gbps) have been implemented for over 20 years, increasing the bandwidth rates of home users from the first Kbps to Gbps. At present, the deployment of GPON/EPON access networks with gigabit rate is basically finished in China, and the large-scale commercial deployment stage of 10G-GON/10G-EPON is entered.
In the aspect of developing and deploying the optical modem to devices such as a 10G-GON/10G-EPON home terminal optical modem, due to service requirements, the optical modem device needs to support both optical fiber access and wireless WiFi access, so that the technical problem of realizing coexistence of optical signals and wireless signals in the aspect of terminal device development is faced. The main reasons for this are: in order to realize indoor transmission and coverage of 5G WiFi, the signal strength of the indoor WiFi needs to reach 24-30 dBm. The electromagnetic signal with such intensity is easy to crosstalk to the photoelectric signal port in the terminal optical modem module, which seriously affects the receiving sensitivity of the photoelectric signal, and leads to the receiving sensitivity not meeting the standard specification requirement.
In view of the above, the present invention is directed to overcoming the drawbacks of the prior art.
[ summary of the invention ]
The technical problem to be solved by the embodiments of the present invention is to meet the development requirements of services, and an access terminal device needs to support both an optical fiber access and a wireless WiFi access connection mode. When the WiFi access standard is upgraded from 2.4G WiFi to 5G WiFi with higher transmission rate, in order to meet the requirement of covering the transmission distance in a family room, the signal intensity of the 5G WiFi is also improved to 24 dBm-30 dBm. The working frequency band of the 5G WiFi signal is just within the working frequency band range of the 10G photoelectric signal, which causes the 5G WiFi signal to cause serious electromagnetic crosstalk to the 10G photoelectric signal, thereby significantly deteriorating the receiving sensitivity of the photoelectric signal, and causing the optical signal access sensitivity of the terminal device to fail to meet the standard requirement.
In a first aspect, the present invention discloses a photodetector, including a photodetector region and a resistance region, specifically:
the photoelectric detector region comprises a half-moon annular N + diffusion region connected with the N pole, an annular P + diffusion region connected with the P pole and a light receiving region; the semi-lunar annular n + diffusion region is arranged at a position with a specified distance from the outer ring of the annular p + diffusion region;
the resistance area comprises a resistor and an R pole, wherein two ends of the resistor are respectively connected with the R pole and the N pole of the photoelectric detector; the R pole is used for connecting a pin VAPD for supplying power to the photoelectric detector; and the N pole of the photoelectric detector is also used for completing grounding by the other end of the first capacitor after being connected with the first capacitor so as to filter the input power supply signal of the pin VAPD.
Preferably, the resistor is a polysilicon resistor; wherein the polysilicon resistor is grown on a designated area of an oxide layer in the photodetector and is positioned above a P-electrode contact layer of the photodetector; the polycrystalline silicon resistor is separated from a P electrode contact layer of the photoelectric detector by the oxide layer; or,
the resistor is an n-well resistor, and the n-well resistor is formed in a designated area of the photoelectric detector through n-type doping before an oxide layer is formed in the photoelectric detector;
the two sides of the polycrystalline silicon resistor or the n-well resistor are respectively doped by n + injection to manufacture two n + contact regions of the polycrystalline silicon resistor or the n-well resistor; and the N + contact region is respectively used for being connected with the R pole and the N pole of the photoelectric detector.
Preferably, the resistance value of the polysilicon resistor is set between 10 ohm and 500 ohm, the thickness of the polysilicon layer of the corresponding polysilicon resistor is 1-3um, the resistivity of the doped polysilicon resistor is 100 +/-10 omega, and the length and the width of the doped polysilicon resistor are set according to the shape characteristic of the photoelectric detector and the size of the resistance value to be formed.
Preferably, the depth of the n-well resistor is 0.5um-1.5um, the resistivity of the n-well is 50 +/-10 omega. um, and the length and the width of the n-well resistor are set according to the shape characteristic of the photoelectric detector and the size of a resistance value to be formed.
In a second aspect, the present invention discloses a photodetector, which includes a photodetector region, a resistor region and a capacitor region, specifically:
the photoelectric detector region comprises a half-moon annular N + diffusion region connected with the N pole, an annular P + diffusion region connected with the P pole and a light receiving region; the semi-lunar annular n + diffusion region is arranged at a position with a specified distance from the outer ring of the annular p + diffusion region;
the resistance area comprises a resistor and an R pole, wherein two ends of the resistor are respectively connected with the R pole and the N pole of the photoelectric detector; the R pole is used for connecting a pin VAPD for supplying power to the photoelectric detector; the N pole of the photoelectric detector is also used for connecting the capacitance area;
the capacitor area comprises a built-in capacitor and a GND pole, wherein one end of the built-in capacitor is connected with the N pole, and the other end of the built-in capacitor is connected with the GND pole so as to filter a pin VAPD input power supply signal.
Preferably, the built-in capacitor is made of a metal-insulator-metal structure, and includes a first layer of metal material, an intermediate insulating layer material, and a second layer of metal material, where the first layer of metal material is located at the bottom of the intermediate insulating layer material and the second layer of metal material, specifically:
when two poles of the built-in capacitor are formed, a first electrode is in contact with an epitaxial part of the first layer of metal material through n + implantation doping, wherein the intermediate insulating layer material and the second layer of metal material are not grown on the epitaxial part of the first layer of metal material;
the second electrode is a designated area on the second layer of metal material, and the designated area is respectively positioned at two sides of the second electrode relative to the first electrode.
Preferably, the first layer of metal material and the second layer of metal material are both one metal material or a mixture of metals of Al, Cu, Au, W, Co and Ti; material of the intermediate insulating layer: SiO 22The thickness is 5-10nm, and the relative dielectric constant is 3.9 +/-0.5; the unit area capacitance of the metal-insulator-metal structure is 2-4 fF/um2。
In a third aspect, the present invention also discloses a method for manufacturing a photodetector, which includes:
growing a first oxide layer on the p + contact layer;
growing a polysilicon layer on the first oxide layer, and exposing and etching to reserve a region for manufacturing a polysilicon resistor;
growing oxide on the etched region to enable the formed second oxide layer to cover the polycrystalline silicon layer;
n + injection doping is carried out at two ends of the polycrystalline silicon resistor area to manufacture two resistor contact areas of the polycrystalline silicon resistor;
etching the region needing to be led out of the electrode until the p + contact region and the n + contact region on the surface are etched to form a contact hole capable of epitaxially growing a metal electrode material;
epitaxially growing an electrode material to form a P pole, an N pole and an R pole of the electrode of the photoelectric detector;
and etching the oxide layer on the surface of the light receiving area of the photoelectric detector to the p + contact layer on the surface to form a window for effectively receiving an external optical signal.
Preferably, before forming the p + contact layer, the method comprises:
processing an InP substrate wafer; n + doping is carried out on the InP substrate to form an N + InP contact layer which is used for manufacturing an N pole of the photoelectric detector; epitaxially growing an n-InGaAsP layer; epitaxially growing a p-InGaAsP layer; epitaxially growing an InP layer; carrying out P + doping on the InP layer to form a P + InP contact layer for manufacturing a P pole of the photoelectric detector; performing deep N + injection doping to form an N + contact region communicated with the N + InP contact layer, and manufacturing an N pole of the photoelectric detector on the surface of the N + contact region; the p + contact layer is specifically a p + InP contact layer; or,
processing a Si substrate wafer; n + doping is carried out on the Si substrate to form an N + Si contact layer which is used for manufacturing an N pole of the photoelectric detector; epitaxially growing an intrinsic Si layer; epitaxially growing a layer of n-type Si, and forming a buffer layer together with the intrinsic Si layer; epitaxially growing an intrinsic Si avalanche layer for generating an avalanche effect and carrying out avalanche amplification on the photogenerated electrons; epitaxially growing a p-type Si charge layer; epitaxially growing an intrinsic Ge absorption layer for absorbing optical signals and generating photo-generated electrons and holes; injecting to perform P + doping, and forming a P + contact region on the surface of the intrinsic Ge absorption layer for manufacturing a P pole of the photoelectric detector; carrying out deep N + implantation doping to form an N + contact region communicated with the N + Si contact layer and used for manufacturing an N pole of the photoelectric detector on the surface; the p + contact layer is specifically a p + Ge contact layer.
In a fourth aspect, the present invention further discloses a method for fabricating a photodetector, wherein before fabricating the oxide layer, the method comprises:
injecting n-type doping into the designated area to form an n-well resistance area;
n + injection doping is carried out on both ends of the n-well resistor region, and two n + contact regions of the n-well resistor are manufactured;
etching the region of the extraction electrode until a surface p + contact region and a surface n + contact region form a contact hole capable of epitaxially growing a metal electrode material;
epitaxially growing an electrode material to form a P pole, an N pole and an R pole of the electrode of the photoelectric detector;
and etching the oxide layer on the surface of the light receiving area of the photoelectric detector to form a window for effectively receiving an external optical signal.
Compared with the prior art, the embodiment of the invention has the beneficial effects that:
the photoelectric detector provided by the invention is integrated with a resistor structure or a combined structure of a resistor and a capacitor, the resistor and an external capacitor device form a low-pass filter on a path for supplying power to the photoelectric detector on the photoelectric detector, or the resistor and capacitor combined structure in the photoelectric detector directly forms the low-pass filter, so that the aim of effectively filtering 5G WiFi crosstalk signals is fulfilled, and the problem that the light receiving sensitivity of 10G access terminal equipment is remarkably degraded due to 5G WiFi crosstalk is solved.
[ description of the drawings ]
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a top view of a prior art package structure of a photodetector provided in the present invention;
fig. 2 is a schematic top view of a structure of a photo-detector integrated with a resistor according to an embodiment of the present invention;
fig. 3 is a top view of a photodetector package structure according to an embodiment of the present invention;
FIG. 4 is a schematic top view of a structure of a photo-detector integrating a resistor and a metal region according to an embodiment of the present invention;
FIG. 5 is a schematic top view of a structure of a photo-detector integrated with a resistor and a capacitor according to an embodiment of the present invention;
fig. 6 is a schematic flow chart of a method for manufacturing a photodetector according to an embodiment of the present invention;
fig. 7 is a schematic diagram of an InP-based APD structure using polysilicon resistors, corresponding to the structure shown in fig. 2, and corresponding to a combination of cross-sectional views of section lines 1 and 2;
FIG. 8 is a cross-sectional view of a SiGe APD structure using polysilicon resistors, corresponding to the structure shown in FIG. 2, taken along line 1 and line 2;
FIG. 9 is a flow chart illustrating another method for fabricating a photodetector according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of an InP-based APD structure employing an n-well resistor, corresponding to the structure shown in FIG. 2, combined with cross-sectional views taken along lines 1 and 2;
FIG. 11 is a cross-sectional view of a combination of cross-sectional views corresponding to section line 1 and section line 2, with a metal region in an InP-based APD structure using an n-well resistor according to an embodiment of the present invention;
FIG. 12 is a schematic diagram of a SiGe APD structure employing an n-well resistor, corresponding to the structure shown in FIG. 2, combined with cross-sectional views corresponding to section lines 1 and 2, according to an embodiment of the present invention;
FIG. 13 is a cross-sectional view of a SiGe APD structure employing an n-well resistor, corresponding to the structure shown in FIG. 2 and including a metal region, taken along with a combination of cross-sectional views taken along line 1 and line 2, in accordance with an embodiment of the present invention;
fig. 14 is a simulation result diagram of the filtering effect of the photodetector according to the present invention on WiFi signals.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, the terms "inner", "outer", "longitudinal", "lateral", "upper", "lower", "top", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are for convenience only to describe the present invention without requiring the present invention to be necessarily constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The inventor finds that the current 10G ONU optical modem adds a filter resistor and a filter capacitor to a branch circuit for supplying power to a photoelectric detector on a PCB (printed circuit board), and also adds the filter capacitor to the inside of an optical receiving component. However, the current filtering scheme cannot effectively filter out WiFi crosstalk signals on the optical receiving module pin VAPD.
The filter resistor and the capacitor are added to a branch circuit for supplying power to the photoelectric detector on the PCB: the WiFi signal on the optical receiving module pin VAPD cannot be filtered out because the WiFi crosstalk signal enters directly through the VAPD pin (the VAPD pin is equivalent to an antenna).
The bandwidth of a filter formed by a VAPD pin (with parasitic resistance of about tens of milliohms) and an internal filter capacitor (generally 470pF) of the light receiving component is in the GHz level, and WiFi crosstalk signals cannot be filtered.
The current test result of the 10G ONU optical modem is as follows:
when no 5G WiFi signal exists, the light receiving sensitivity of a 10G ONU optical modem test is about-29 dBm to-31 dBm @ BER-1E-3, wherein dBm is the unit of incident light power, and the incident light power is 10 log (Pin/1) after the unit is converted into dBm if the incident light power is Pinmilliwatt (mW); BER 1E-3 indicates a bit error rate equal to 1E-3.
After the 5G WiFi signal is turned on, the light receiving sensitivity of the 10G ONU optical modem test is degraded to be lower than-20 dBm @ BER-1E-3.
The technical features mentioned in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1:
the photoelectric detector region comprises a half-moon annular N + diffusion region connected with the N pole, an annular P + diffusion region connected with the P pole and a light receiving region; the semi-lunar annular n + diffusion region is arranged at a position with a specified distance from the outer ring of the annular p + diffusion region;
the resistance area comprises a resistor and an R pole, wherein two ends of the resistor are respectively connected with the R pole and the N pole of the photoelectric detector; the R pole is used for connecting a pin VAPD for supplying power to the photoelectric detector; and the N pole of the photoelectric detector is also used for completing grounding by the other end of the first capacitor after being connected with the first capacitor so as to filter the input power supply signal of the pin VAPD.
The photoelectric detector provided by the embodiment of the invention is integrated with the resistor structure, and the resistor and an external capacitor device form a low-pass filter on a path for supplying power to the photoelectric detector, so that the aim of effectively filtering 5G WiFi crosstalk signals is achieved, and the problem that the light receiving sensitivity of 10G access terminal equipment is remarkably degraded due to 5G WiFi crosstalk is solved. Fig. 3 is a schematic diagram of a pin structure of a TO-CAN package implemented by combining the photodetector chip according TO an embodiment of the present invention.
In the embodiment of the present invention, at least two experimentally demonstrated feasible ways are provided for the above-mentioned implementation of the resistor.
The first method is as follows:
the resistor is a polysilicon resistor; wherein the polysilicon resistor is grown on a designated area of an oxide layer in the photodetector and is positioned above a P-electrode contact layer of the photodetector; wherein the polysilicon resistor is separated from the P electrode contact layer of the photoelectric detector by the oxide layer.
In the background scene provided by the embodiment of the invention, the resistance value of the polysilicon resistor is set between 10 ohm and 500 ohm, the thickness of the polysilicon layer of the corresponding polysilicon resistor is 1-3um, the resistivity of the doped polysilicon resistor is 100 +/-10 omega, um, and the length and the width of the doped polysilicon resistor are set according to the shape characteristic of the photoelectric detector and the size of the resistance value to be formed. The specific calculation method of the resistance value of the polysilicon is given here as follows:
assuming that the thickness of the polysilicon resistance layer is d, the resistivity of the polysilicon resistance layer is ρ (in Ω. um), and the length and width of the polysilicon resistance layer are L micrometers (um) and W micrometers (um), respectively, the resistance of the square resistor of the polysilicon resistance layer is:
Rsquare block＝ρ/d(Ω.um2)；
Note: the square resistance means a resistance having a length and a width of 1 um.
The resistance value of the polysilicon resistor is as follows:
R＝Rsquare block×L/W(Ω)；
The resistivity ρ is generally obtained by a four-probe sheet resistivity tester. The resistivity can also be calculated by measuring the size and the resistance value of the measured resistor according to a calculation formula: (1) firstly, measuring the size of the measured resistor, including the length L and the area S of the cross section; (2) accurately measuring the resistance R of the measured resistor by methods such as a high-precision bridgeS(ii) a (3) Calculating the resistivityThe resistivity is calculated as follows:
ρ＝RS×S/L；
in order to simplify the measurement process, the length L and the width W of the measured resistor are made to be equal during design, the thickness of the measured resistor is d, and then the resistivity calculation formula of the measured resistor is as follows:
ρ＝RS×(W×d)/L＝RS×d；
that is, for the measured resistor with the same length L and width W, the resistivity can be simplified to be obtained by multiplying the measured resistance value by the thickness.
In the present embodiment, a set of parameter instances is given: thickness of the polysilicon layer: 2 um; resistivity of doped polysilicon: um (obtained according to the resistivity measurement method and experimental results described above: if P-type doping is used, the doping concentration is about 9.6E + 18; if N-type doping is used, the doping concentration is about 5E + 17); polycrystalline silicon square resistance: 50 omega; 500 ohm polysilicon resistor size example: width 30um and length 300 um; 10 ohm polysilicon resistor size example: width 200um x length 40 um.
As shown in fig. 4, a modified solution proposed in the embodiment of the present invention is that, a metal layer (identified as a metal region in the top view shown in fig. 4) connected to the N-pole of the resistor is covered above the polysilicon resistor, and the metal layer is made of metal materials such as Al, Cu, Au, W (tungsten), Co (cobalt), and Ti (titanium), which are the same as the material of the resistor and the electrode of the photodetector; the distance between the metal layer region and the P pole of the resistor, the distance between the metal layer region and the upper boundary of the semilunar annular n + diffusion region and the upper boundary of the device are all 10-20 mu m; the metal layer and the substrate of the device (usually connected to ground by default) form a capacitor, and the dielectric material between the metal layer and the substrate of the device is SiO2The relative dielectric constant of the material is 3.9 +/-0.5; assuming SiO2The thickness of (a) is 15-30nm, the capacitance per unit area of the metal-substrate structure is 0.67-1.33 fF/um2(ii) a If the width of the metal layer is 60um and the length is 300um, the parasitic capacitance formed by the metal layer and the substrate is about 12-24 pF. The capacitance calculation formula of the metal layer-substrate structure is as follows:
C＝ε0×εSiO2×S/d；
in the above formula, ∈0A vacuum dielectric constant of 8.854X 10-12(F/m)；εSiO2Is SiO2The relative dielectric constant of the material; s is the area of the metal layer-substrate structure capacitor, which is equal to the width of the metal layer-substrate structure capacitor multiplied by the length of the metal layer-substrate structure capacitor, and the area of the capacitor per unit area is 1um2(ii) a d is a dielectric material (here SiO)2) Is measured.
The polysilicon resistor, the metal layer above the polysilicon resistor and the capacitor formed by the device substrate form a low-pass filter, and a part of external crosstalk signals can be filtered in advance to a certain extent (the attenuation degree of the external crosstalk signals is about dozens of times); the alien crosstalk signals are then further effectively filtered out in combination with the applied capacitance.
The second method comprises the following steps:
the resistor is an n-well resistor, and the n-well resistor is formed in a designated area of the photoelectric detector through n-type doping before an oxide layer is formed in the photoelectric detector;
the two sides of the polycrystalline silicon resistor or the n-well resistor are respectively doped by n + injection to manufacture two n + contact regions of the polycrystalline silicon resistor or the n-well resistor; and the N + contact region is respectively used for being connected with the R pole and the N pole of the photoelectric detector.
In the background scene provided by the embodiment of the invention, the depth of the n-well resistor is 0.5-1.5 um, the resistivity of the n-well is 50 +/-10 omega, and the length and the width of the n-well resistor are set according to the shape characteristic of the photoelectric detector and the size of the resistance value to be formed.
Example 2:
an embodiment of the present invention provides a photodetector, where, compared to the photodetector in embodiment 1 integrated with a built-in resistor, the photodetector in embodiment 1 further needs to connect a peripheral capacitor to an N-pole to form a filter circuit, and in embodiment 2 of the present invention, the peripheral capacitor that needs to be added in the use process of embodiment 1 is further integrated into the photodetector, as shown in fig. 5, including a photodetector region, a resistor region, and a capacitor region, specifically:
the photoelectric detector region comprises a half-moon annular N + diffusion region connected with the N pole, an annular P + diffusion region connected with the P pole and a light receiving region; the semi-lunar annular n + diffusion region is arranged at a position with a specified distance from the outer ring of the annular p + diffusion region;
the resistance area comprises a resistor and an R pole, wherein two ends of the resistor are respectively connected with the R pole and the N pole of the photoelectric detector; the R pole is used for connecting a pin VAPD for supplying power to the photoelectric detector; the N pole of the photoelectric detector is also used for connecting the capacitance area;
the capacitor area comprises a built-in capacitor and a GND pole, wherein one end of the built-in capacitor is connected with the N pole, and the other end of the built-in capacitor is connected with the GND pole so as to filter a pin VAPD input power supply signal.
The combined structure of the resistor and the capacitor is integrated into the photoelectric detector provided by the embodiment of the invention, and the low-pass filter is directly formed by the combined structure of the resistor and the capacitor in the photoelectric detector, so that the aim of effectively filtering 5G WiFi crosstalk signals is fulfilled, and the problem that the light receiving sensitivity of 10G access terminal equipment is remarkably degraded due to 5G WiFi crosstalk is solved.
In an embodiment of the present invention, the built-in capacitor is made of a metal-insulator-metal structure, and includes a first layer of metal material, an intermediate insulating layer material, and a second layer of metal material, where the first layer of metal material is located at the bottom of the intermediate insulating layer material and the second layer of metal material, specifically:
when two poles of the built-in capacitor are formed, a first electrode is in contact with an epitaxial part of the first layer of metal material through n + implantation doping, wherein the intermediate insulating layer material and the second layer of metal material are not grown on the epitaxial part of the first layer of metal material;
the second electrode is a designated area on the second layer of metal material, and the designated area is respectively positioned at two sides of the second electrode relative to the first electrode.
For example: the first layer of metal material and the second layer of metal material are both metals such as Al, Cu, Au, W (tungsten), Co (cobalt), Ti (titanium) and the likeA material; the intermediate insulating layer is made of SiO2The thickness is 5-10nm, and the relative dielectric constant is 3.9 +/-0.5; the unit area capacitance of the metal-insulator-metal structure is 2-4 fF/um2. According to experimental demonstration, the resistance value of the photoelectric detector is 500 ohms, the filter capacitance is 50-100 pF, and the photoelectric detector is suitable for ONU optical modems in optical access networks such as 10G-GON/10G-EPON, next generation 50G PON and the like and other application scenes of coexistence of photoelectric and WiFi signals; the light receiving assembly adopting the photoelectric detector structure can effectively filter WiFi signals before the WiFi signals enter the signal end of the photoelectric detector through radiation crosstalk, so that the WiFi signals are prevented from being mixed into useful data signals of the photoelectric detector, and the sensitivity of the light receiving assembly is prevented from being deteriorated by the WiFi signals.
It should be noted that the meaning of the embodiment of the present invention is to embed both the resistor and the capacitor in the chip itself, and therefore, the technical details described in relation to the embedded resistor portion in embodiment 1 are also applicable to the embodiment of the present invention.
Example 3:
an embodiment of the present invention provides a method for manufacturing a photodetector, as shown in fig. 6, the method includes:
in step 201, a first oxide layer is grown on the p + contact layer.
In step 202, a polysilicon layer is grown on the first oxide layer, and the region for manufacturing the polysilicon resistor is reserved by exposure and etching.
In step 203, oxide is grown on the etched away regions so that the second oxide layer is formed covering the polysilicon layer.
In step 204, n + implantation doping is performed at both ends of the polysilicon resistor region to fabricate two resistor contact regions of the polysilicon resistor.
In step 205, the region where the electrode needs to be extracted is etched until the surface p + contact region and the n + contact region are reached, so as to form a contact hole for epitaxially growing a metal electrode material.
In step 206, an electrode material is epitaxially grown to form electrodes P, N, and R of the photodetector and a metal layer over the resistive region.
In step 207, the oxide layer on the surface of the photo-detector is etched away to reach the p + contact layer on the surface, so as to form a window for effectively receiving the external optical signal.
In the embodiment of the invention, under different photoelectric detector chip manufacturing scenes, the corresponding p + contact layer can be represented as different material layers. Two cases are listed as follows:
the first condition is as follows:
an InP (indium phosphide) APD structure diagram of an integrated polysilicon resistor, as shown in fig. 7 and referring to the top view shown in fig. 2, includes an InP substrate, an n + InP contact layer, an n-InGaAsP (indium gallium arsenide phosphide), a p-InGaAsP, a p + InP contact layer, an oxide layer, a polysilicon layer, and a metal layer. The SiGe APD structure is composed of an InP substrate, an n + InP contact layer, an n-InGaAsP (indium gallium arsenide phosphide), a p-InGaAsP and a p + InP contact layer and is used for converting an input optical signal into a photo-generated current signal; the polysilicon layer forms a polysilicon resistor which is used for forming a low-pass filter with the capacitor, and external crosstalk signals are effectively filtered.
Then, prior to forming the p + contact layer, the method comprises:
processing an InP substrate wafer; n + doping is carried out on the InP substrate to form an N + InP contact layer which is used for manufacturing an N pole of the photoelectric detector; epitaxially growing an n-InGaAsP layer; epitaxially growing a p-InGaAsP layer; epitaxially growing an InP layer; carrying out P + doping on the InP layer to form a P + InP contact layer for manufacturing a P pole of the photoelectric detector; performing deep N + injection doping to form an N + contact region communicated with the N + InP contact layer, and manufacturing an N pole of the photoelectric detector on the surface of the N + contact region; at this time, the p + contact layer is specifically a p + InP contact layer.
Thus, an InP APD structure is manufactured, wherein n-InGaAsP and p-InGaAsP form a PN junction; under the action of an external electric field, photogenerated electrons generated in the PN junction region can enter the N-InGaAsP layer and the N + InP contact layer, enter the surface through the N + contact region manufactured in the step 7 and flow into the N pole; the photo-generated holes generated in the PN junction region enter the P + contact region and flow into the P pole.
As shown in fig. 11, in order to use the cross-sectional view of the structure correspondingly presented after the metal region structure is correspondingly added in example 1, by comparing the differences between fig. 11 and fig. 10, it can be further clarified that the metal region structure can be further obtained by etching growth after the processing procedure of the above case one.
Case two:
a schematic diagram of a SiGe (germanium silicon) APD (avalanche photodetector) structure of integrated polysilicon resistor, as shown in fig. 8 and with reference to the top view shown in fig. 2, includes a Si substrate, an n + contact layer, an intrinsic Si layer, an n-type Si layer, an intrinsic Si avalanche layer, a p-type Si charge layer, an intrinsic Ge absorption layer, a p + Ge contact layer, an oxide layer, a polysilicon layer and a metal layer. The SiGe APD structure consists of a Si substrate, an n + contact layer, an intrinsic Si layer, an n-type Si layer, an intrinsic Si avalanche layer, a p-type Si charge layer, an intrinsic Ge absorption layer and a p + Ge contact layer, and is used for converting an input optical signal into a photo-generated current signal; the polysilicon layer forms a polysilicon resistor which is used for forming a low-pass filter with the capacitor, and external crosstalk signals are effectively filtered.
Then, prior to forming the p + contact layer, the method comprises:
processing a Si substrate wafer; n + doping is carried out on the Si substrate to form an N + Si contact layer which is used for manufacturing an N pole of the photoelectric detector; epitaxially growing an intrinsic Si layer; epitaxially growing a layer of n-type Si, and forming a buffer layer together with the intrinsic Si layer; epitaxially growing an intrinsic Si avalanche layer for generating an avalanche effect and carrying out avalanche amplification on the photogenerated electrons; epitaxially growing a p-type Si charge layer; epitaxially growing an intrinsic Ge absorption layer for absorbing optical signals and generating photo-generated electrons and holes; injecting to perform P + doping, and forming a P + contact region on the surface of the intrinsic Ge absorption layer for manufacturing a P pole of the photoelectric detector; carrying out deep N + implantation doping to form an N + contact region communicated with the N + Si contact layer and used for manufacturing an N pole of the photoelectric detector on the surface; at this time, the p + contact layer is specifically a p + Ge contact layer.
Thus, a SiGe APD structure is manufactured, wherein a PN junction is formed by the p-type Si charge layer, the intrinsic Si avalanche layer and the n-type Si; under the action of an external electric field, photogenerated electrons generated by the intrinsic Ge absorption layer can enter the p-type Si charge layer, the intrinsic Si avalanche layer, the N-type Si, the intrinsic Si layer and the N + Si contact layer, enter the surface through the N + contact area manufactured in the step 9 and flow into the N pole; the photogenerated holes generated by the intrinsic Ge absorption layer enter the P + contact region and flow into the P pole.
As shown in fig. 13, in order to use the cross-sectional view of the structure correspondingly presented after the metal region structure is correspondingly added in example 1, by comparing the differences between fig. 11 and fig. 12, it can be further clarified that the metal region structure can be further obtained by etching growth after the processing procedure of the above case one.
Example 4:
an embodiment of the present invention provides a method for manufacturing a photodetector, where before manufacturing an oxide layer, as shown in fig. 9, with reference to a structural cross-sectional view shown in fig. 10, the method includes:
in step 301, an n-well resistor region is formed by implanting n-type dopant into a designated region.
In step 302, n + implantation doping is performed at both ends of the n-well resistor region to fabricate two n + contact regions of the n-well resistor.
In step 303, the region of the extraction electrode is etched until the surface p + contact region and the n + contact region form a contact hole for epitaxially growing a metal electrode material.
In step 304, electrode material is epitaxially grown to form electrodes P, N, and R of the photodetector.
In step 305, for the photo-receiving area of the photo-detector, the oxide layer on the surface is etched away to form a window for effectively receiving the external optical signal.
Fig. 12 is a schematic diagram of a SiGe (germanium silicon) APD (avalanche photodetector) structure with integrated n-well resistor according to the present invention, which includes a Si substrate, an n + contact layer, an intrinsic Si layer, an n-type Si layer, an intrinsic Si avalanche layer, a p-type Si charge layer, an intrinsic Ge absorption layer, a p + Ge contact layer, an n-well, an oxide layer and a metal layer. The SiGe APD structure consists of a Si substrate, an n + contact layer, an intrinsic Si layer, an n-type Si layer, an intrinsic Si avalanche layer, a p-type Si charge layer, an intrinsic Ge absorption layer and a p + Ge contact layer, and is used for converting an input optical signal into a photo-generated current signal; the n-well region forms an n-well resistor, and the n-well resistor and the capacitor form a low-pass filter to effectively filter external crosstalk signals.
The photodetector processing steps illustrated in fig. 12 will be described in detail below.
Step 1: processing a Si substrate wafer;
step 2: n + doping is carried out on the Si substrate to form an N + Si contact layer which is used for manufacturing an N pole of the photoelectric detector;
and 3, step 3: epitaxially growing an intrinsic Si layer;
and 4, step 4: epitaxially growing a layer of n-type Si, and forming a buffer layer together with the intrinsic Si layer in the step 3;
and 5, step 5: an intrinsic Si avalanche layer is epitaxially grown and used for generating an avalanche effect and carrying out avalanche amplification on photo-generated electrons so as to achieve the purpose of improving the light responsivity;
and 6, step 6: epitaxially growing a p-type Si charge layer;
and 7, step 7: epitaxially growing an intrinsic Ge absorption layer for absorbing optical signals and generating photo-generated electrons and holes;
and 8, step 8: injecting to perform P + doping, and forming a P + contact region on the surface of the intrinsic Ge absorption layer for manufacturing a P pole of the photoelectric detector;
step 9: carrying out deep N + implantation doping to form an N + contact region communicated with the N + Si contact layer in the step 2, wherein the N + contact region is used for facilitating the manufacture of an N pole of the photoelectric detector on the surface;
manufacturing a SiGe APD structure from the step 1 to the step 9, wherein a P-type Si charge layer, an intrinsic Si avalanche layer and n-type Si form a PN junction; under the action of an external electric field, photogenerated electrons generated by the intrinsic Ge absorption layer can enter the p-type Si charge layer, the intrinsic Si avalanche layer, the N-type Si, the intrinsic Si layer and the N + Si contact layer, enter the surface through the N + contact area manufactured in the step 9 and flow into the N pole; the photogenerated holes generated by the intrinsic Ge absorption layer enter the P + contact region and flow into the P pole;
step 10: injecting n-type doping to form an n-well resistance region;
and 11, step 11: n + injection doping is carried out on both ends of the n-well resistor region, and two n + contact regions of the n-well resistor are manufactured;
step 12: etching the region needing to be led out of the electrode until the p + contact region and the n + contact region on the surface are etched to form a contact hole capable of epitaxially growing a metal electrode material;
step 13: and epitaxially growing an electrode material Au-Sn or other metal electrode materials to form a P pole, an N pole and an R pole of the electrode of the photoelectric detector.
Step 14: and etching the oxide layer on the surface of the light receiving area of the photoelectric detector to the p + Ge contact layer on the surface to form a window for effectively receiving an external optical signal.
Fig. 14 is a graph showing simulation results of filtering WiFi signals by using the photodetector of the present invention, wherein the resistance value of the photodetector is 100 ohms, and the filter capacitance is 470 pF. Simulation results show that: the 2.4G WiFi crosstalk signal may be attenuated by about 57dB (i.e., the 2.4G WiFi crosstalk signal is attenuated by about 1/708), and the 5G WiFi crosstalk signal may be attenuated by about 63.3dB (i.e., the 2.4G WiFi crosstalk signal is attenuated by about 1/1462).
It should be noted that, for the information interaction, execution process and other contents between the modules and units in the apparatus and system, the specific contents may refer to the description in the embodiment of the method of the present invention because the same concept is used as the embodiment of the processing method of the present invention, and are not described herein again.
Those of ordinary skill in the art will appreciate that all or part of the steps of the various methods of the embodiments may be implemented by associated hardware as instructed by a program, which may be stored on a computer-readable storage medium, which may include: read Only Memory (ROM), Random Access Memory (RAM), magnetic or optical disks, and the like.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A photoelectric detector is characterized by comprising a photoelectric detector area and a resistance area, and specifically comprises the following components:
the photoelectric detector region comprises a half-moon annular N + diffusion region connected with the N pole, an annular P + diffusion region connected with the P pole and a light receiving region; the semi-lunar annular n + diffusion region is arranged at a position with a specified distance from the outer ring of the annular p + diffusion region;
the resistance area comprises a resistor and an R pole, wherein two ends of the resistor are respectively connected with the R pole and the N pole of the photoelectric detector; the R pole is used for connecting a pin VAPD for supplying power to the photoelectric detector; and the N pole of the photoelectric detector is also used for completing grounding by the other end of the first capacitor after being connected with the first capacitor so as to filter the input power supply signal of the pin VAPD.
2. The photodetector of claim 1, wherein the resistor is a polysilicon resistor; wherein the polysilicon resistor is grown on a designated area of an oxide layer in the photodetector and is positioned above a P-electrode contact layer of the photodetector; the polycrystalline silicon resistor is separated from a P electrode contact layer of the photoelectric detector by the oxide layer; or,
the resistor is an n-well resistor, and the n-well resistor is formed in a designated area of the photoelectric detector through n-type doping before an oxide layer is formed in the photoelectric detector;
the two sides of the polycrystalline silicon resistor or the n-well resistor are respectively doped by n + injection to manufacture two n + contact regions of the polycrystalline silicon resistor or the n-well resistor; and the N + contact region is respectively used for being connected with the R pole and the N pole of the photoelectric detector.
3. The photodetector of claim 2, wherein the resistance of the polysilicon resistor is set between 10 ohm and 500 ohm, the thickness of the polysilicon layer of the corresponding polysilicon resistor is 1-3um, the resistivity of the doped polysilicon is 100 ± 10 Ω · um, and the length and width are set according to the shape characteristic of the photodetector and the magnitude of the resistance to be formed.
4. The photodetector of claim 2, wherein the n-well resistor has a depth of 0.5um to 1.5um, an n-well resistivity of 50 ± 10 Ω -um, and a length and a width thereof are set according to the shape characteristics of the photodetector and the magnitude of the resistance to be formed.
5. A photoelectric detector is characterized by comprising a photoelectric detector area, a resistance area and a capacitance area, and specifically comprises the following components:
the photoelectric detector region comprises a half-moon annular N + diffusion region connected with the N pole, an annular P + diffusion region connected with the P pole and a light receiving region; the semi-lunar annular n + diffusion region is arranged at a position with a specified distance from the outer ring of the annular p + diffusion region;
the resistance area comprises a resistor and an R pole, wherein two ends of the resistor are respectively connected with the R pole and the N pole of the photoelectric detector; the R pole is used for connecting a pin VAPD for supplying power to the photoelectric detector; the N pole of the photoelectric detector is also used for connecting the capacitance area;
the capacitor area comprises a built-in capacitor and a GND pole, wherein one end of the built-in capacitor is connected with the N pole, and the other end of the built-in capacitor is connected with the GND pole so as to filter a pin VAPD input power supply signal.
6. The photodetector of claim 5, wherein the built-in capacitor is made of a metal-insulator-metal structure, and comprises a first layer of metal material, an intermediate insulating layer material, and a second layer of metal material, wherein the first layer of metal material is located at the bottom of the intermediate insulating layer material and the second layer of metal material, and specifically:
when two poles of the built-in capacitor are formed, a first electrode is in contact with an epitaxial part of the first layer of metal material through n + implantation doping, wherein the intermediate insulating layer material and the second layer of metal material are not grown on the epitaxial part of the first layer of metal material;
the second electrode is a designated area on the second layer of metal material, and the designated area is respectively positioned at two sides of the second electrode relative to the first electrode.
7. The photodetector of claim 6, wherein the first layer of metal material and the second layer of metal material are both one or more metal mixtures of Al, Cu, Au, W, Co and Ti; material of the intermediate insulating layer: SiO 22The thickness is 5-10nm, and the relative dielectric constant is 3.9 +/-0.5; the unit area capacitance of the metal-insulator-metal structure is 2-4 fF/um2。
8. A method of fabricating a photodetector, the method comprising:
growing a first oxide layer on the p + contact layer;
growing a polysilicon layer on the first oxide layer, and exposing and etching to reserve a region for manufacturing a polysilicon resistor;
growing oxide on the etched region to enable the formed second oxide layer to cover the polycrystalline silicon layer;
n + injection doping is carried out at two ends of the polycrystalline silicon resistor area to manufacture two resistor contact areas of the polycrystalline silicon resistor;
etching the region needing to be led out of the electrode until the p + contact region and the n + contact region on the surface are etched to form a contact hole capable of epitaxially growing a metal electrode material;
epitaxially growing an electrode material to form a P pole, an N pole and an R pole of the electrode of the photoelectric detector;
and etching the oxide layer on the surface of the light receiving area of the photoelectric detector to the p + contact layer on the surface to form a window for effectively receiving an external optical signal.
9. The method of fabricating a photodetector as claimed in claim 8, wherein prior to forming the p + contact layer, the method comprises:
processing an InP substrate wafer; n + doping is carried out on the InP substrate to form an N + InP contact layer which is used for manufacturing an N pole of the photoelectric detector; epitaxially growing an n-InGaAsP layer; epitaxially growing a p-InGaAsP layer; epitaxially growing an InP layer; carrying out P + doping on the InP layer to form a P + InP contact layer for manufacturing a P pole of the photoelectric detector; performing deep N + injection doping to form an N + contact region communicated with the N + InP contact layer, and manufacturing an N pole of the photoelectric detector on the surface of the N + contact region; the p + contact layer is specifically a p + InP contact layer; or,
processing a Si substrate wafer; n + doping is carried out on the Si substrate to form an N + Si contact layer which is used for manufacturing an N pole of the photoelectric detector; epitaxially growing an intrinsic Si layer; epitaxially growing a layer of n-type Si, and forming a buffer layer together with the intrinsic Si layer; epitaxially growing an intrinsic Si avalanche layer for generating an avalanche effect and carrying out avalanche amplification on the photogenerated electrons; epitaxially growing a p-type Si charge layer; epitaxially growing an intrinsic Ge absorption layer for absorbing optical signals and generating photo-generated electrons and holes; injecting to perform P + doping, and forming a P + contact region on the surface of the intrinsic Ge absorption layer for manufacturing a P pole of the photoelectric detector; carrying out deep N + implantation doping to form an N + contact region communicated with the N + Si contact layer and used for manufacturing an N pole of the photoelectric detector on the surface; the p + contact layer is specifically a p + Ge contact layer.
10. A method of fabricating a photodetector, the method comprising, prior to fabricating an oxide layer:
injecting n-type doping into the designated area to form an n-well resistance area;
n + injection doping is carried out on both ends of the n-well resistor region, and two n + contact regions of the n-well resistor are manufactured;
etching the region of the extraction electrode until a surface p + contact region and a surface n + contact region form a contact hole capable of epitaxially growing a metal electrode material;
epitaxially growing an electrode material to form a P pole, an N pole and an R pole of the electrode of the photoelectric detector;
and etching the oxide layer on the surface of the light receiving area of the photoelectric detector to form a window for effectively receiving an external optical signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011218910.9A CN112397594B (en) | 2020-11-04 | 2020-11-04 | Photoelectric detector and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011218910.9A CN112397594B (en) | 2020-11-04 | 2020-11-04 | Photoelectric detector and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112397594A true CN112397594A (en) | 2021-02-23 |
| CN112397594B CN112397594B (en) | 2022-03-25 |
Family
ID=74597896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011218910.9A Active CN112397594B (en) | 2020-11-04 | 2020-11-04 | Photoelectric detector and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112397594B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114388632A (en) * | 2022-01-12 | 2022-04-22 | 中国电子科技集团公司第四十四研究所 | Multi-pixel free-running single photon detector based on floating ring and preparation method |
| CN115173956A (en) * | 2022-07-26 | 2022-10-11 | 烽火通信科技股份有限公司 | Photoelectric detection receiver |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133695A1 (en) * | 2003-12-17 | 2005-06-23 | Yoshiki Kuhara | Photodetector and optical receiver |
| US20060081779A1 (en) * | 2004-10-18 | 2006-04-20 | Kok-Soon Yeo | Variable noise control for an optical transducer |
| CN1790946A (en) * | 2004-12-17 | 2006-06-21 | 中兴通讯股份有限公司 | Optical receiving module with overload protection function |
| CN107170847A (en) * | 2017-05-16 | 2017-09-15 | 中国科学院半导体研究所 | Make avalanche photodide of multiplication region and preparation method thereof based on AlInAsSb body materials |
| CN111404494A (en) * | 2020-06-04 | 2020-07-10 | 微龛(广州)半导体有限公司 | Transimpedance amplifier chip and optical receiving module |
-
2020
- 2020-11-04 CN CN202011218910.9A patent/CN112397594B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133695A1 (en) * | 2003-12-17 | 2005-06-23 | Yoshiki Kuhara | Photodetector and optical receiver |
| US20060081779A1 (en) * | 2004-10-18 | 2006-04-20 | Kok-Soon Yeo | Variable noise control for an optical transducer |
| CN1790946A (en) * | 2004-12-17 | 2006-06-21 | 中兴通讯股份有限公司 | Optical receiving module with overload protection function |
| CN107170847A (en) * | 2017-05-16 | 2017-09-15 | 中国科学院半导体研究所 | Make avalanche photodide of multiplication region and preparation method thereof based on AlInAsSb body materials |
| CN111404494A (en) * | 2020-06-04 | 2020-07-10 | 微龛(广州)半导体有限公司 | Transimpedance amplifier chip and optical receiving module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114388632A (en) * | 2022-01-12 | 2022-04-22 | 中国电子科技集团公司第四十四研究所 | Multi-pixel free-running single photon detector based on floating ring and preparation method |
| CN114388632B (en) * | 2022-01-12 | 2023-11-14 | 中国电子科技集团公司第四十四研究所 | Multi-pixel free-running single photon detector based on floating ring and preparation method |
| CN115173956A (en) * | 2022-07-26 | 2022-10-11 | 烽火通信科技股份有限公司 | Photoelectric detection receiver |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112397594B (en) | 2022-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112397594B (en) | Photoelectric detector and manufacturing method thereof | |
| JP6346911B2 (en) | Integrated photodiode for semiconductor substrates | |
| CN206774544U (en) | Integrated photo detector with enhancing static discharge damage protection | |
| EP0725447B1 (en) | Pin type light-receiving device and its fabrication process | |
| US6919609B2 (en) | High speed detectors having integrated electrical components | |
| US5886374A (en) | Optically sensitive device and method | |
| US20060255419A1 (en) | Front side illuminated photodiode with backside bump | |
| CN111404494B (en) | Transimpedance amplifier chip and optical receiving module | |
| CN103872168B (en) | For the photodetector in silicon based opto-electronics integrated circuit (IC) chip and preparation method | |
| Schow et al. | Design and implementation of high-speed planar Si photodiodes fabricated on SOI substrates | |
| JPH09213988A (en) | P-i-n type photodetector, photoelectric conversion circuit and photoelectric conversion module | |
| US6707075B1 (en) | Method for fabricating avalanche trench photodetectors | |
| Swe et al. | An accurate photodiode model for DC and high frequency SPICE circuit simulation | |
| CN103779361B (en) | Photodetector of spatial modulation structure and preparation method thereof | |
| Fahs et al. | Design and modeling of blue-enhanced and bandwidth-extended PN photodiode in standard CMOS technology | |
| TWI818027B (en) | Universal broadband photodetector design and fabrication process | |
| CN105659394B (en) | Optical receiving circuit and its manufacture method | |
| CN109545882B (en) | Capacitive photoelectric detector and manufacturing process | |
| JP2005167202A (en) | Integration coupler | |
| Rue et al. | High performance 10 Gb/s PIN and APD optical receivers | |
| CN117334775B (en) | High-transmission-rate photodiode of optical fiber receiving circuit and process method | |
| KR102672313B1 (en) | Light-receiving device having electromagnetic interference removal function | |
| KR100654014B1 (en) | Photo diode having electrode structure for large optical signal receiving area | |
| KR100894803B1 (en) | Semiconductor filter circuit and method | |
| Shi et al. | Ultra-fast (325 GHz) near-ballistic uni-traveling-carrier photodiodes with high sub-THz output power under a 50Ω load |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |