CN112390642B - Negative thermal expansion material Cu 2 V 2-x P x O 7 And method for preparing the same - Google Patents
Negative thermal expansion material Cu 2 V 2-x P x O 7 And method for preparing the same Download PDFInfo
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Abstract
The invention belongs to the field of inorganic non-metallic materials, and discloses a negative thermal expansion material Cu 2 V 2‑x P x O 7 And a method for preparing the same. As target product Cu 2 V 2‑x P x O 7 And weighing the raw materials according to the medium stoichiometric molar ratio Cu: V: P = 2-x: x, and preparing by adopting a solid-phase sintering method, a laser sintering method, a sol-gel method or a hydrothermal method. The novel negative thermal expansion material has a large negative thermal expansion coefficient in a wide temperature region, is simple in preparation process and low in cost, is suitable for industrial production, and has a great application value.
Description
Technical Field
The invention belongs to the field of inorganic non-metallic materials, and particularly relates to a negative thermal expansion material Cu 2 V 2 -x P x O 7 And a method for preparing the same.
Background
When the temperature changes greatly or the temperature change range is relatively large. Due to thermal stress caused by mismatching of thermal expansion coefficients of different materials, technical indexes of material devices are poor, instruments are damaged, and other problems, such as high-voltage wires drooping in summer, system errors generated by a thermal expansion instrument and a precise optical device, thermal expansion of a circuit board, a heat insulation layer of a spacecraft, and the like can be caused. Research into negative thermal expansion materials has helped solve these problems caused by thermal expansion.
Most materials in nature have the characteristics of expansion with heat and contraction with cold, but some materials have the property of exhibiting the expansion with heat and the contraction with cold within a certain temperature range, such as ZrW 2 O 8 、ZrV 2 O 7 、Y 2 M 3 O 12 (M = W, mo) and Zr 2 (WO 4 )(PO 4 ) 2 And so on. At present, research is beginning to explore the preparation of controllable thermal expansion coefficient or zero expansion material by compounding negative thermal expansion material and positive thermal expansion material, so as to reduce the thermal stress of the material at high temperature to the maximum extent and increase the thermal shock resistance of the material. Based on these important applications, negative thermal expansion materials are gaining increasing attention. However, the research on negative thermal expansion materials is still in the experimental exploration stage, and many problems, such as deterioration of mechanical properties and negative thermal expansion properties due to characteristics such as phase change and water absorption, high raw material cost, complex production process and the like, need to be solved for large-scale application.
Monoclinic phase Cu 2 P 2 O 7 In the vicinity of 90 ℃, phase transformation exists, negative thermal expansion exists before the phase transformation, and positive expansion appears after the phase transformation, and the negative thermal expansion property is only shown in a narrower temperature zone.α-Cu 2 V 2 O 7 The phase is an orthogonal phase and belongs toFdd2A space group;β-Cu 2 V 2 O 7 is a monoclinic phase and belongs toC2/cA space group; both of these phases exhibit negative thermal expansion characteristics over a wide temperature range, butβ-Cu 2 V 2 O 7 Has the problems of loose texture, difficult molding, serious preferred orientation, small expansion coefficient and the like.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide the negative thermal expansion material Cu which covers room temperature and a wide temperature range, has large negative thermal expansion coefficient and low cost 2 V 2-x P x O 7 And a method for preparing the same.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a negative thermal expansion material, the chemical formula of the negative thermal expansion material is Cu 2 V 2-x P x O 7 Wherein, 0.0< x < 2.0。
The negative thermal expansion material is monoclinic phase.
The preparation method of the negative thermal expansion material comprises the following steps: as target product Cu 2 V 2-x P x O 7 Weighing raw materials according to the medium stoichiometric molar ratio Cu: V: P =2:2-x: x, pretreating the raw materials, and then preparing the raw materials by adopting a solid-phase sintering method.
The preparation method of the negative thermal expansion material comprises the following steps: as target product Cu 2 V 2-x P x O 7 Weighing raw materials according to the medium-stoichiometric molar ratio Cu: V: P =2:2-x: x, and performing pretreatment on the raw materials and then preparing the raw materials by adopting a laser sintering method.
When the material of the present invention is prepared by a solid-phase sintering method or a laser sintering method, it is preferable that the Cu material is selected from the group consisting of Cu, cuO and Cu 2 O or CuCO 3 ·Cu(OH) 2 ·xH 2 O; the V raw material is selected from V 2 O 5 Or NH 4 VO 3 (ii) a P is selected from NH 4 H 2 PO 4 Or P 2 O 5 。
When the material is prepared by a solid-phase sintering method and a laser sintering method, the pretreatment steps are as follows: mixing and grinding the weighed raw materials for 2-5 h.
When the material is prepared by a solid-phase sintering method and a laser sintering method, the sintering temperature is preferably 500-1000 ℃, and the sintering time is preferably 0.5-5 h.
The preparation method of the negative thermal expansion material comprises the following steps: as target product Cu 2 V 2-x P x O 7 Weighing raw materials according to the medium-stoichiometric molar ratio Cu: V: P =2:2-x: x, and preparing the product by using a hydrothermal method.
The preparation method of the negative thermal expansion material comprises the following steps: as target product Cu 2 V 2-x P x O 7 Weighing raw materials according to the stoichiometric molar ratio Cu: V: P =2:2-x: x, and preparing by using a sol-gel method.
When the material is prepared by a hydrothermal method and a sol-gel method, the Cu raw material is selected from CuCO 3 ·Cu(OH) 2 ·xH 2 The O and V raw materials are selected from NH 4 VO 3 P is selected from NH 4 H 2 PO 4 。
The invention has the beneficial effects that:
1. the invention relates to a novel negative thermal expansion material Cu 2 V 2-x P x O 7 （0.0 < x <2.0 Stable negative thermal expansion property in a wide temperature range and larger negative thermal expansion coefficient; in addition, the material has no water absorption, has no obvious preferred orientation and has good application value;
2. the invention relates to negative thermal expansion ceramic Cu 2 V 2-x P x O 7 The preparation method has simple process and low cost of raw materials and process, and is suitable for industrial production.
Drawings
FIG. 1 is Cu 2 V 2-x P x O 7 XRD pattern of (x = 0.0, 0.5, 1.0, 1.5, 2.0).
FIG. 2 is Cu 2 V 2-x P x O 7 (x = 0.0, 0.5, 1.0, 1.5, 2.0).
FIG. 3 is Cu 2 V 2-x P x O 7 (x = 0.0, 0.5, 1.0, 1.5, 2.0), thermal expansion curve measured by a low temperature dilatometer.
FIG. 4 is Cu 2 V 2-x P x O 7 (x = 0.0, 0.5, 1.0, 1.5, 2.0), thermal expansion curve measured by high temperature thermal expansion instrument.
FIG. 5 shows Cu 2 V 1.0 P 1.0 O 7 The temperature change range of the temperature change XRD spectrum is (-193 ℃ -300 ℃).
FIG. 6 is a schematic view of a structure made of Cu of FIG. 5 2 V 1.0 P 1.0 O 7 The a axis of the variable temperature XRD fine modification changes along with the temperature.
FIG. 7 is a drawing showing the structure of Cu in FIG. 5 2 V 1.0 P 1.0 O 7 The b-axis of the variable temperature XRD refinement changes with temperature.
FIG. 8 is a drawing showing the drawing of Cu in FIG. 5 2 V 1.0 P 1.0 O 7 The c-axis of the variable temperature XRD refinement changes with temperature.
FIG. 9 is a schematic view of a structure made of Cu of FIG. 5 2 V 1.0 P 1.0 O 7 The beta angle of the temperature-changing XRD fine modification changes with the temperature.
FIG. 10 is a drawing showing the structure of FIG. 5 Cu 2 V 1.0 P 1.0 O 7 The temperature-variable XRD refined unit cell volume of (1) is changed along with the temperature, wherein the volume expansion coefficient reaches alpha v = -18.36×10 -6 。
FIG. 11 is Cu 2 V 2-x P x O 7 (x = 0.0, 0.5, 1.0, 1.5, 2.0).
Detailed Description
The technical solution of the present invention is further described in detail with reference to the following specific examples, but the scope of the present invention is not limited thereto.
Example 1
Preparation of Cu by solid phase method 2 V 2.0 O 7 Ceramic powder: weighing raw materials CuO and V according to a molar ratio of 2: 1 2 O 5 Grinding in a mortar for 2 h, and pressing into a cylinder with diameter of 10 mm and height of 10 mm under the pressure of 200 MPa by using a uniaxial tablet press; the sample is put into a ark, and then is sintered for 4 hours in a high-temperature tube furnace at the temperature of 660 ℃ at the speed of 5 ℃/min, and the temperature is naturally reduced to the room temperature in the air.
Example 2
Preparation of Cu by solid phase method 2 V 1.5 P 0.5 O 7 Ceramic powder: taking CuO and V as raw materials according to the mol ratio of 8: 3: 2 2 O 5 And NH 4 H 2 PO 4 Grinding in a mortar for 2 h, and pressing into a cylinder with diameter of 10 mm and height of 10 mm under the pressure of 200 MPa by using a uniaxial tablet press; putting the sample into a ark, then heating to 720 ℃ at the speed of 5 ℃/min in a high-temperature tube furnace, sintering for 4 h, and naturally cooling to room temperature in the air.
Example 3
Preparation of Cu by solid phase method 2 V 1.0 P 1.0 O 7 Ceramic powder: weighing CuO and V according to the mol ratio of 4: 1: 2 2 O 5 And NH 4 H 2 PO 4 Grinding in a mortar for 2 h, and pressing into a cylinder with diameter of 10 mm and height of 10 mm under the pressure of 200 MPa by using a uniaxial tablet press; putting the sample into a square boat, then heating to 750 ℃ at the speed of 5 ℃/min in a high-temperature tube furnace, sintering for 4 h, and naturally cooling to room temperature in the air.
Example 4
Preparation of Cu by solid phase method 2 V 0.5 P 1.5 O 7 Ceramic powder: weighing CuO and V according to the molar ratio of 8: 1: 6 2 O 5 And NH 4 H 2 PO 4 Grinding in a mortar for 2 h, and pressing into a cylinder with diameter of 10 mm and height of 10 mm under pressure of 200 MPa with a uniaxial tablet press; putting the sample into a ark, then heating to 800 ℃ at the speed of 5 ℃/min in a high-temperature tube furnace, sintering for 4 h, and naturally cooling to room temperature in the air.
Example 5
Preparation of Cu by solid phase method 2 P 2.0 O 7 Ceramic powder: weighing raw materials CuO and P according to the molar ratio of 1: 1 2 O 5 Grinding in a mortar for 2 h, and pressing into a cylinder with diameter of 10 mm and height of 10 mm under the pressure of 200 MPa by using a uniaxial tablet press; putting the sample into a ark, then heating to 850 ℃ at the speed of 5 ℃/min in a high-temperature tube furnace, sintering for 4 h, and naturally cooling to room temperature in the air.
Examples 1-5 preparation of the resulting Cu 2 V 2-x P x O 7 The XRD pattern of (x = 0.0, 0.5, 1.0, 1.5, 2.0) is shown in fig. 1.XRD results showed the formation of pure monoclinic phase Cu 2 V 2-x P x O 7 (x = 0.0, 0.5, 1.0, 1.5, 2.0) (no impurity phase and no peaks of the starting material in XRD). Further, as shown in FIG. 1, when the sample was subjected to the X-ray diffraction experiment, cu was found 2 V 2-x P x O 7 （0.5 < x <1.5 No apparent preferred orientation of the crystal lattice.
Examples 1-5 preparation of the resulting Cu 2 V 2-x P x O 7 The raman spectrum (x = 0.0, 0.5, 1.0, 1.5, 2.0) is shown in fig. 2. As can be seen from fig. 2: the peak of the Raman spectrum gradually changes along with the change of the doping ratioIt is noted that the crystal structure gradually changes with the increase of the doping ratio.
Examples 1-5 for Low temperature dilatometer testing Cu obtained 2 V 2-x P x O 7 (x = 0.0, 0.5, 1.0, 1.5, 2.0) thermal expansion curves are shown in FIG. 3, cu prepared in examples 1-5 tested by a high temperature dilatometer 2 V 2-x P x O 7 The thermal expansion curves (x = 0.0, 0.5, 1.0, 1.5, 2.0) are shown in fig. 4.
Example 3 preparation of the resulting Cu 2 V 1.0 P 1.0 O 7 The temperature-variable XRD pattern of (A) is shown in figure 5, and the results of the changes of the a axis, the b axis, the c axis, the beta angle and the unit cell volume along with the temperature, which are refined from figure 5, are respectively shown in figure 6, figure 7, figure 8, figure 9 and figure 10. As can be seen in fig. 5-10: the a-axis and c-axis shrink with increasing temperature, the b-axis elongates with increasing temperature, the beta angle decreases with increasing temperature, and the cell volume as a whole shrinks with increasing temperature.
Table 1 shows the linear expansion coefficient values obtained from fig. 3 and the volume expansion coefficient values obtained from fig. 10.
From fig. 1 and table 1, it can be seen that: successfully prepare toβ-Cu 2 V 2.0 O 7 Andβ-Cu 2 P 2.0 O 7 both materials have negative thermal expansion characteristics; cu 2 V 2-x P x O 7 （0.0 < x <2.0 ) compared to Cu 2 P 2 O 7 Can remarkably widen the negative thermal expansion temperature zone of the material and increase the applicability of the material. With simultaneous use of NH in the solid-phase sintering process 4 H 2 PO 4 To partially replace toxic V 2 O 5 The preparation cost of the material can be obviously reduced, and the material is more environment-friendly and has higher application value.
Examples 1-5 synthetic Cu 2 V 2-x P x O 7 The thermogravimetric plot of (x = 0.0, 0.5, 1.0, 1.5, 2.0) is shown in fig. 11. From the figureIn 11 can be seen: the material has no weight loss phenomenon in the temperature range of RT-600 ℃, which shows that the series of materials have no water absorption.
The laboratory procedure for preparing materials by solid-phase sintering is given in the above examples, and when applied to industrial production, corresponding adaptation can be performed as required.
In addition, cu is used in addition to the solid-phase sintering method 2 V 2-x P x O 7 （0.0 < x <2.0 Can also be prepared by a laser sintering method, and the preparation process of the laser sintering method can refer to Ref.1-Ref.4, which is not described in detail herein. The novel negative thermal expansion material Cu can also be prepared by a hydrothermal method 2 V 2-x P x O 7 （0.0 < x <2.0 Ref.5 can be referred to in the preparation process of a hydrothermal method, and the novel negative thermal expansion material Cu can also be prepared by a sol-gel method 2 V 2-x P x O 7 （0.0 < x <2.0 Ref.6 can be referred to in the preparation process, and details are not described herein.
Compared with a laser sintering method, a sol-gel method and a hydrothermal method, the solid-phase sintering method is more beneficial to large-scale rapid preparation, and therefore, the method has industrial application value.
In the above examples, the Cu element used as CuO and the V element used as V were all V 2 O 5 The P element is NH 4 H 2 PO 4 Or P 2 O 5 . But it is clear that only the Cu, V, P and O four elements are reserved after the preparation process is finished, so that the Cu element can be selected from Cu and Cu according to the material price or the preparation mode or other considerations 2 O、CuCO 3 ·Cu(OH) 2 ·xH 2 O, etc., the element V is selected from NH 4 VO 3 And so on. Due to differences in preparation conditions and test equipment, the content of the present patent protection is not limited to the preparation temperature and the expansion coefficient described above.
Reference:
Ref.1：Liang E J, Wu T A, Yuan B, et al. Synthesis, microstructure and phase control of zirconium tungstate with a CO 2 laser [J]. Journal of Physics D: Applied Physics, 2007, 40(10): 3219.
ref.2: laser fast sintering synthesis of HfW 2 O 8 Study of their Properties [ J]Photoelectron. Laser, 2009 (stage 11).
Ref.3：Liang E J, Wang S H, Wu T A, et al. Raman spectroscopic study on the structure, phase transition and restoration of zirconium tungstate bl℃ks synthesized with a CO 2 laser [J]. Journal of Raman Spectroscopy: An International Journal for Original Work in all Aspects of Raman Spectroscopy, Including Higher Order Pr℃esses, and also Brillouin and Rayleigh Scattering, 2007, 38(9): 1186-1192.
Ref.4: from the Beam Source, from Chenchen, chaulmoogra, etc 2 Synthesis of negative thermal expansion material Sc by laser sintering 2 (MO 4 ) 3 (M = W, mo) and Raman spectrum [ J ] thereof]Journal of physics, 2014 (24): 376-385.
Ref.5: wangyong copper vanadate material preparation and electrochemical performance research [ D ]. Shanxi university of science and technology, 2017.
Ref.6：Cao J, Wang X, Tang A, et al. Sol–gel synthesis and electr℃hemical properties of CuV 2 O 6 cathode material [J]. Journal of alloys and compounds, 2009, 479(1-2): 875-878.
Claims (9)
1. A negative thermal expansion material characterized by: the chemical formula of the negative thermal expansion material is Cu 2 V 2-x P x O 7 Wherein, 0.0< x <2.0; the negative thermal expansion material is monoclinic phase.
2. A method for preparing a negative thermal expansion material according to claim 1, wherein: as target product Cu 2 V 2- x P x O 7 Weighing raw materials according to the medium stoichiometric molar ratio Cu: V: P =2:2-x: x, pretreating the raw materials, and then preparing the raw materials by adopting a solid-phase sintering method.
3. A method for preparing a negative thermal expansion material according to claim 1, wherein: as target product Cu 2 V 2- x P x O 7 Weighing raw materials according to the medium stoichiometric molar ratio Cu: V: P =2:2-x: x, pretreating the raw materials, and then preparing the product by adopting a laser sintering method.
4. A method for preparing a negative thermal expansion material according to claim 2 or 3, wherein: the Cu material is selected from Cu, cuO, and Cu 2 O or CuCO 3 ·Cu(OH) 2 ·xH 2 O; the V raw material is selected from V 2 O 5 Or NH 4 VO 3 (ii) a P is selected from NH 4 H 2 PO 4 Or P 2 O 5 。
5. The method for preparing a negative thermal expansion material according to claim 2 or 3, wherein the pre-treatment step is specifically: mixing and grinding the weighed raw materials for 2-5 h.
6. A method for preparing a negative thermal expansion material according to claim 2 or 3, wherein: the sintering temperature is 500-1000 ℃, and the sintering time is 0.5-5 h.
7. A method for preparing a negative thermal expansion material according to claim 1, wherein: as target product Cu 2 V 2- x P x O 7 Weighing raw materials according to the medium stoichiometric molar ratio Cu: V: P =2:2-x: x, and preparing by using a hydrothermal method.
8. A method for preparing a negative thermal expansion material according to claim 1, wherein: as target product Cu 2 V 2- x P x O 7 Weighing raw materials according to the stoichiometric molar ratio Cu: V: P =2:2-x: x, and preparing by using a sol-gel method.
9. The method for producing a negative thermal expansion material according to claim 7 or 8, wherein: cu is selected from CuCO 3 ·Cu(OH) 2 ·xH 2 The O and V raw materials are selected from NH 4 VO 3 P is selected from NH 4 H 2 PO 4 。
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007000310A1 (en) * | 2005-06-27 | 2007-01-04 | K.U.Leuven Research & Development | Process for producing sintered porous materials |
| CN104843663A (en) * | 2015-04-16 | 2015-08-19 | 东华大学 | Negative expansion material ZrScMo2PO12 and solid-phase sintering synthesis method thereof |
| CN105060913A (en) * | 2015-08-13 | 2015-11-18 | 中国科学院光电技术研究所 | Preparation method of C/C-SiC (carbon fiber reinforced carbon-silicon carbide) composite with low CTE (coefficient of thermal expansion) |
| CN105648248A (en) * | 2016-01-06 | 2016-06-08 | 郑州大学 | Controllable thermal expansion composite conductive ceramic material alpha-Cu2V2O7-Al |
| CN107732183A (en) * | 2017-09-29 | 2018-02-23 | 陕西科技大学 | A kind of sodium-ion battery positive material Cu3(PO4)2/Cu2P2O7The preparation method of composite |
| CN111170295A (en) * | 2020-03-16 | 2020-05-19 | 管玲飞 | Conductive Mg-P co-doped Cu2V2O7-graphene negative thermal expansion material and preparation method thereof |
| CN112939591A (en) * | 2021-01-22 | 2021-06-11 | 北京科技大学 | Synthetic method of mixed valence state rare earth iron-based oxide bulk material |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102815929B (en) * | 2012-09-10 | 2014-02-26 | 山东轻工业学院 | Multivariate gradient self-lubricating ceramic cutting tool material with surface having residual compressive stress and preparation method of multivariate gradient self-lubricating ceramic cutting tool material |
| CN103825456B (en) * | 2014-02-12 | 2017-03-22 | 中国航天时代电子公司 | Positive-negative power supply current expanding apparatus in H bridge control circuit |
| WO2019167924A1 (en) * | 2018-02-27 | 2019-09-06 | 国立大学法人東京工業大学 | Negative thermal expansion material, composite material, and method for producing negative thermal expansion material |
-
2020
- 2020-12-01 CN CN202011383189.9A patent/CN112390642B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007000310A1 (en) * | 2005-06-27 | 2007-01-04 | K.U.Leuven Research & Development | Process for producing sintered porous materials |
| CN104843663A (en) * | 2015-04-16 | 2015-08-19 | 东华大学 | Negative expansion material ZrScMo2PO12 and solid-phase sintering synthesis method thereof |
| CN105060913A (en) * | 2015-08-13 | 2015-11-18 | 中国科学院光电技术研究所 | Preparation method of C/C-SiC (carbon fiber reinforced carbon-silicon carbide) composite with low CTE (coefficient of thermal expansion) |
| CN105648248A (en) * | 2016-01-06 | 2016-06-08 | 郑州大学 | Controllable thermal expansion composite conductive ceramic material alpha-Cu2V2O7-Al |
| CN107732183A (en) * | 2017-09-29 | 2018-02-23 | 陕西科技大学 | A kind of sodium-ion battery positive material Cu3(PO4)2/Cu2P2O7The preparation method of composite |
| CN111170295A (en) * | 2020-03-16 | 2020-05-19 | 管玲飞 | Conductive Mg-P co-doped Cu2V2O7-graphene negative thermal expansion material and preparation method thereof |
| CN112939591A (en) * | 2021-01-22 | 2021-06-11 | 北京科技大学 | Synthetic method of mixed valence state rare earth iron-based oxide bulk material |
Non-Patent Citations (3)
| Title |
|---|
| "Cu2V2O7负热膨胀特性的研究及Al/Cu2V2O7低热膨胀复合材料的研究";李立;《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》;20160115;第23页第2-3段，第10页-12页第1.6节、1.6.3小节-1.6.5小节 * |
| "Strong Negative Thermal Expansion of Cu2PVO7 in a Wide Temperature Range";Naike Shi等;《Chemistry of Materials》;20210228;第1231-1239页 * |
| "ZrV2-xPxO7固溶体的相变与热膨胀性质的研究";袁焕丽;《物理学报》;20120919;摘要，第5页右栏第3段 * |
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