CN112379829B - Adaptive switching method, system, equipment and medium for memory execution strategy - Google Patents

Adaptive switching method, system, equipment and medium for memory execution strategy Download PDF

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Publication number
CN112379829B
CN112379829B CN202011177920.2A CN202011177920A CN112379829B CN 112379829 B CN112379829 B CN 112379829B CN 202011177920 A CN202011177920 A CN 202011177920A CN 112379829 B CN112379829 B CN 112379829B
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memory
strategy
execution
data
time period
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CN112379829A (en
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曾国忠
陈寄福
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SHENZHEN SILICONGO MICROELECTRONICS CO Ltd
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SHENZHEN SILICONGO MICROELECTRONICS CO Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061Improving I/O performance
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629Configuration or reconfiguration of storage systems
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

The invention discloses a self-adaptive switching method, a self-adaptive switching system, terminal equipment and a computer storage medium of a memory execution strategy, wherein operation data of a memory are acquired in a preset time period; determining a use characteristic parameter of the memory according to the operation data; adjusting a general execution strategy preset for the memory according to the using characteristic parameters to obtain a special execution strategy; and switching the execution strategy currently used by the memory into the special execution strategy. The method solves the problem that the general memory execution strategy aiming at memory configuration cannot ensure that the memory keeps the optimal data read-write performance, realizes the dynamic adjustment and switching of the execution strategy aiming at the memory, further can always ensure that the memory used by a user has good performance, and improves the stability of the memory in the whole use process.

Description

Adaptive switching method, system, equipment and medium for memory execution strategy
Technical Field
The present invention relates to the field of data storage technologies, and in particular, to a method, a system, a terminal device, and a computer storage medium for adaptively switching a memory execution policy.
Background
In the past, an execution policy for ensuring that the memory normally completes data reading and writing is matched in the memory applied to data reading and writing, and the execution policy is generally a universal execution policy uniformly configured by a manufacturer of the memory when the memory leaves a factory. However, since different users have different usage habits for the memory, it is often difficult for many memories to continuously ensure optimal data read-write performance based on the general execution policy under different usage habits of different users.
Although in the prior art, a set of special execution strategies capable of enabling the memory to exert optimal performance under the special scene can be specially designed for the user according to the special scene of using the memory by the user, once the habit of using the memory by the user cannot be finally determined, manufacturers can directly select to configure the general execution strategies for the memory.
In summary, the existing manufacturers execute policies for configuring a general memory for the memory, and because of the specificity of the user to the usage habit of the memory, the best performance of data read-write of the memory can not be ensured all the time.
Disclosure of Invention
The invention mainly aims to provide a self-adaptive switching method, a self-adaptive switching system, a self-adaptive switching terminal device and a self-adaptive switching computer storage medium for a memory execution strategy, and aims to solve the technical problem that in the prior art, a manufacturer configures a general memory execution strategy for a memory, and the memory can not always maintain the optimal performance of data reading and writing because of the specificity of a user to the use habit of the memory.
In order to achieve the above object, the present invention provides an adaptive switching method of a memory execution policy, where the adaptive switching method of the memory execution policy includes:
collecting operation data of the memory in a preset time period;
determining a use characteristic parameter of the memory according to the operation data;
adjusting a general execution strategy preset for the memory according to the using characteristic parameters to obtain a special execution strategy;
and switching the execution strategy currently used by the memory into the special execution strategy.
Further, the general execution policy includes, but is not limited to: a read-write strategy, a wear balance strategy, a garbage collection strategy and a power-down protection strategy,
the step of adjusting the general execution policy preset for the memory according to the usage characteristic parameters to obtain a special execution policy includes:
and adjusting the read-write strategy, the wear balance strategy, the garbage collection strategy and/or the power-down protection strategy according to the use characteristic parameters to obtain a special read-write strategy, wear balance strategy, garbage collection strategy and/or power-down protection strategy.
Further, after the step of determining the usage characteristic parameter of the memory according to the operation data, the method further includes:
and adjusting the current execution strategy of the memory according to the use characteristic parameters to obtain a special execution strategy.
Further, the step of switching the execution policy currently used by the memory to the dedicated execution policy includes:
detecting the idle time of the memory, and switching a target execution strategy in all execution strategies currently used by the memory into the special execution strategy in the idle time;
the step of switching the target execution policy in the execution policies currently used by the memory to the dedicated execution policy during the idle time includes:
and in the idle time, determining a target execution strategy corresponding to the special execution strategy from all the execution strategies currently used by the memory, and switching the target execution strategy into the special execution strategy.
Further, the operational data includes, but is not limited to: data write amount, data read amount and memory wear,
the step of collecting the operation data of the memory in a preset time period comprises the following steps:
Continuously detecting the data writing quantity, the data reading quantity and the memory wear condition of the memory;
recording the data writing amount, the data reading amount and the memory wear detected in the preset time period to form operation data of the memory in the time period.
Further, the method further comprises:
adjusting the time period according to the operation data;
the step of adjusting the time period according to the operation data includes:
detecting whether the data volume of the operation data exceeds a preset data volume threshold;
if yes, shortening the time period or keeping the time period unchanged;
if not, the time period is prolonged.
Further, the usage characteristic parameters include, but are not limited to: the proportion of the read data, the proportion of the stored and written data and the data cold-hot state of the read and written data,
the step of determining the usage characteristic parameters of the memory according to the operation data comprises the following steps:
determining a specific gravity of the read data and a specific gravity of the write data based on the data writing amount and the data reading amount; the method comprises the steps of,
And determining the data cold and hot state of the read-write data based on the memory wear condition.
In addition, in order to achieve the above object, the present invention also provides an adaptive switching system of a memory execution policy, the adaptive switching system of the memory execution policy including:
the acquisition module is used for acquiring the operation data of the memory in a preset time period;
the determining module is used for determining the use characteristic parameters of the memory according to the operation data;
the adjusting module is used for adjusting the general execution strategy preset for the memory according to the using characteristic parameters to obtain a special execution strategy;
and the switching module is used for switching the execution strategy currently used by the memory into the special execution strategy.
Each functional module of the adaptive switching system of the memory execution strategy of the present invention realizes the steps of the adaptive switching method of the memory execution strategy as described above at the time of operation.
In addition, to achieve the above object, the present invention also provides a terminal device including: the method comprises the steps of a memory, a processor and a memory execution strategy adaptive switching program stored on the memory and capable of running on the processor, wherein the memory execution strategy adaptive switching program is executed by the processor to realize the memory execution strategy adaptive switching method.
In addition, to achieve the above object, the present invention also provides a computer storage medium having a computer program stored thereon, which when executed by a processor, implements the steps of the adaptive switching method of a memory execution policy as described above.
The self-adaptive switching method, the self-adaptive switching system, the self-adaptive switching terminal equipment and the self-adaptive switching computer storage medium for the memory execution strategy are provided by the invention, and the operation data of the memory are acquired in a preset time period; determining a use characteristic parameter of the memory according to the operation data; adjusting a general execution strategy preset for the memory according to the using characteristic parameters to obtain a special execution strategy; and switching the execution strategy currently used by the memory into the special execution strategy.
The invention continuously collects the operation data of the memory when executing the data read-write task of the user in the preset time period in the process of using the memory by the user, then analyzes and determines the use characteristic parameters of the memory in the use process of the user based on the collected operation data of the memory in the time period, thereby adjusting the preset general execution strategy of the memory to a special execution strategy capable of enabling the memory to obtain high performance in the use process of the user based on the use characteristic parameters, and finally switching the execution strategy of the memory in the current use process to the special execution strategy obtained after adjustment, so that the memory operates according to the special execution strategy in the subsequent use process of the user.
Compared with the existing mode of configuring the general memory execution strategy only on the memory, the method and the device have the advantages that the characteristic parameters of the memory in the process of being used by a user are determined based on analysis, and the execution strategy of the memory is adaptively adjusted and switched based on the characteristic parameters so that the memory can achieve high-performance in the process of being used by the user, and therefore the problem that the general memory execution strategy for configuring the memory cannot guarantee that the memory can maintain optimal data read-write performance is solved.
In addition, the characteristic parameters of the memory at different times used by the user are periodically acquired, analyzed and determined, so that the dynamic adjustment and switching of the execution strategy of the memory can be realized, the memory used by the user can be always ensured to have good performance, and the stability of the memory in the whole use process is improved.
Drawings
Fig. 1 is a schematic structural diagram of hardware operation of a terminal device according to an embodiment of the present invention;
FIG. 2 is a flow chart of an adaptive switching method of a memory implementation strategy according to an embodiment of the present invention;
fig. 3 is a schematic block diagram of an adaptive switching system of a memory implementation strategy according to the present invention.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a hardware running environment related to a terminal device according to an embodiment of the present invention.
It should be noted that fig. 1 may be a schematic structural diagram of a hardware operating environment of a terminal device. The terminal equipment of the embodiment of the invention can be data storage control terminals, PCs, portable computers and other terminal equipment.
As shown in fig. 1, the terminal device may include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, a communication bus 1002. Wherein the communication bus 1002 is used to enable connected communication between these components. The user interface 1003 may include a Display, an input unit such as a Keyboard (Keyboard), and the optional user interface 1003 may further include a standard wired interface, a wireless interface. The network interface 1004 may optionally include a standard wired interface, a wireless interface (e.g., WI-FI interface). The memory 1005 may be a nonvolatile memory (e.g., flash memory), a high-speed RAM memory, or a stable memory (non-volatile memory), such as a disk memory. The memory 1005 may also optionally be a storage device separate from the processor 1001 described above.
It will be appreciated by those skilled in the art that the terminal device structure shown in fig. 1 is not limiting of the terminal device and may include more or fewer components than shown, or may combine certain components, or a different arrangement of components.
As shown in fig. 1, an operating system, a network communication module, a user interface module, and a processing program of distributed tasks may be included in a memory 1005 as one type of computer storage medium. The operating system is a program for managing and controlling hardware and software resources of the sample terminal device, and supports the running of processing programs of distributed tasks and other software or programs.
In the terminal device shown in fig. 1, the user interface 1003 is mainly used for data communication with each terminal; the network interface 1004 is mainly used for connecting a background server and carrying out data communication with the background server; and the processor 1001 may be configured to invoke an adaptive switching program of a memory execution policy stored in the memory 1005 and perform the following operations:
collecting operation data of the memory in a preset time period;
determining a use characteristic parameter of the memory according to the operation data;
adjusting a general execution strategy preset for the memory according to the using characteristic parameters to obtain a special execution strategy;
And switching the execution strategy currently used by the memory into the special execution strategy.
Further, the general execution policy includes, but is not limited to: the processor 1001 may call the adaptive switching program of the memory execution policy stored in the memory 1005, and further perform the following operations:
and adjusting the read-write strategy, the wear balance strategy, the garbage collection strategy and/or the power-down protection strategy according to the use characteristic parameters to obtain a special read-write strategy, wear balance strategy, garbage collection strategy and/or power-down protection strategy.
Further, the processor 1001 may call an adaptive switching program of a memory execution policy stored in the memory 1005, and after executing the determination of the usage characteristic parameters of the memory according to the operation data, further execute the following operations:
and adjusting the current execution strategy of the memory according to the use characteristic parameters to obtain a special execution strategy.
Further, the processor 1001 may call an adaptive switching program of a memory execution policy stored in the memory 1005, and further perform the following operations:
Detecting the idle time of the memory, and switching a target execution strategy in all execution strategies currently used by the memory into the special execution strategy in the idle time;
the processor 1001 may call an adaptive switching program of a memory execution policy stored in the memory 1005, and also perform the following operations:
and in the idle time, determining a target execution strategy corresponding to the special execution strategy from all the execution strategies currently used by the memory, and switching the target execution strategy into the special execution strategy.
Further, the operational data includes, but is not limited to: the processor 1001 may call an adaptive switching program of a memory execution policy stored in the memory 1005 for the data write amount, the data read amount, and the memory wear condition, and further perform the following operations:
continuously detecting the data writing quantity, the data reading quantity and the memory wear condition of the memory;
recording the data writing amount, the data reading amount and the memory wear detected in the preset time period to form operation data of the memory in the time period.
Further, the processor 1001 may call an adaptive switching program of a memory execution policy stored in the memory 1005, and further perform the following operations:
adjusting the time period according to the operation data;
the processor 1001 may call an adaptive switching program of a memory execution policy stored in the memory 1005, and also perform the following operations:
detecting whether the data volume of the operation data exceeds a preset data volume threshold;
if yes, shortening the time period or keeping the time period unchanged;
if not, the time period is prolonged.
Further, the usage characteristic parameters include, but are not limited to: the processor 1001 may call the adaptive switching program of the memory execution policy stored in the memory 1005, and further perform the following operations:
determining a specific gravity of the read data and a specific gravity of the write data based on the data writing amount and the data reading amount; the method comprises the steps of,
and determining the data cold and hot state of the read-write data based on the memory wear condition.
Based on the above structure, various embodiments of the adaptive switching method of the memory execution strategy of the present invention are presented.
Referring to fig. 2, fig. 2 is a flowchart illustrating a first embodiment of an adaptive switching method of a memory implementation policy according to the present invention.
Embodiments of the present invention provide embodiments of an adaptive switching method for memory execution policy, it being noted that although a logic sequence is shown in the flowchart, in some cases the steps shown or described may be performed in a different order than that shown or described herein.
The adaptive switching method of the memory execution strategy of the embodiment of the invention is applied to the terminal equipment for controlling the data storage, and the terminal equipment of the embodiment of the invention can be the terminal equipment such as a data storage medium, a data storage control terminal, a PC, a portable computer and the like, and is not particularly limited.
The adaptive switching method of the memory execution strategy of the embodiment comprises the following steps:
step S100, collecting operation data of the memory in a preset time period;
it should be noted that, in this embodiment, the preset time period may be configured autonomously based on the environment in which the memory is specifically used by the user, for example, the time period may be configured as one week, one month, one quarter, or even one year by a developer of the memory or the user based on an existing configuration mode that is arbitrarily mature. It should be understood that, based on different design needs of practical applications, the time period may of course be configured in other possible embodiments as well, and the configuration manner and time of the time period are not specifically limited, where the time period is different from each time listed herein.
The current terminal device for controlling data reading and writing continuously collects operation data of the memory when the memory executes the data reading and writing task in a preset time period in the process of controlling the memory to execute the data reading and writing task triggered by a user.
It should be noted that, in this embodiment, the data read-write task triggered by the user may be a data storage task or a data read task, and the memory may be an SSD (Solid State Disk or Solid State Drive) Solid State Disk or other mechanical hard Disk, which should be understood that, based on different design requirements of practical applications, in other feasible embodiments, the data read-write task may be a task different from that illustrated herein, and the memory may be a memory different from that illustrated in this embodiment, where the method for adaptively switching the execution policy of the memory of the present invention does not specifically limit the manner in which the data read-write task is triggered by the user, the data read-write task, and the type of the memory.
Further, the operation data of the memory when performing the data read/write task includes, but is not limited to: the data writing amount, the data reading amount, and the memory wear condition, in a possible embodiment, the step S100 may include:
Step S101, continuously detecting the data writing quantity, the data reading quantity and the abrasion condition of the memory;
the terminal device continuously detects the data writing amount or the data reading amount of the memory when the memory executes the data reading and writing task each time in the whole process that the memory starts to be used by a user to execute the data reading and writing task, and detects the abrasion condition of the memory after the data reading and writing task is executed each time.
Specifically, for example, a certain terminal device, a portable notebook computer, continuously detects a memory installed in the notebook computer from the start of a startup operation, the size of a data writing amount of the memory when a user operates to save and write a document in the whole process of text editing using the notebook computer, or the size of a data reading amount of the memory in the whole process of viewing a locally stored video of the memory using the notebook computer, and the notebook computer detects the wear degree of the memory at the current moment to determine the wear condition of the memory after each execution of a data reading and writing task of the memory.
Step S102, recording the data writing amount, the data reading amount and the memory wear detected in the preset time period, so as to form operation data of the memory in the time period.
The terminal device records the data writing quantity, the data reading quantity and the memory wear condition of the memory detected in a preset time period, and the operation data of the memory in the time period is formed.
Specifically, for example, a design developer of a memory installed in a portable notebook computer configures a time period in advance to be one week, so that the portable notebook computer records the detected size of the data writing amount, the size of the data reading amount, and the memory wear condition of the memory each time the memory performs various data reading and writing tasks of a user within one week of the notebook computer system time as operation data during the use of the memory by the user within the one week.
Step S200, determining the use characteristic parameters of the memory according to the operation data;
after acquiring operation data of a memory in a preset time period and executing a data read-write task triggered by a user, the terminal equipment analyzes and determines the use characteristic parameters of the memory when the memory is used by the user based on the operation data.
Further, the usage characteristic parameters of the memory when used by the user include, but are not limited to: in one possible embodiment, the step S200 may include:
Step S201 of determining a specific gravity of the read data and a specific gravity of the write data based on the data writing amount and the data reading amount;
the terminal equipment extracts the data writing quantity and the data reading quantity from the recorded operation data of the data reading and writing task triggered by the user in a preset time period, and calculates the proportion of the data read and written when the memory is used by the user in the time period based on the data writing quantity and the data reading quantity.
Specifically, for example, the data writing amount of the memory extracted by the terminal device in one week is 20M in total, and the data reading amount of the extracted memory in one week is 2.1GB in total, and the terminal device calculates that the specific gravity of the data read by the memory when used by the user in the one week is: 2.1 GB/2.1gb+20m) ×% =99.1% and the specific gravity of the memory calculated to store data when used by the user during the one week is: 20M ≡ (2.1gb+20m) ×% =0.9%.
Step S202, determining the data cold and hot state of the read-write data based on the abrasion condition of the memory.
The terminal equipment extracts the abrasion condition of the memory from the recorded operation data of the data read-write task triggered by the user in the memory within a preset time period, and analyzes and determines the data cold and hot state of the read-write data when the memory is used by the user within the time period based on the abrasion condition of the memory.
Specifically, for example, if the memory model of the memory extracted by the terminal device is slightly worn in one week, the terminal device may determine that the memory is in a cold or hot state when the memory is used by the user in the one week, where the cold or hot state of the read data is: the read-write hot data is more; or if the memory model condition of the memory extracted by the terminal device in one week is normal, the terminal device may determine that the cold and hot states of the read data of the memory in the one week are: and the cold and hot data are read and written normally.
It should be noted that, in this embodiment, the manner in which the terminal device analyzes and determines the usage characteristic parameters of the memory based on the data writing amount, the data reading amount, the wear condition of the memory, and other operation data of the memory may be specifically designed based on practical applications. Based on different design requirements of practical applications, in other possible embodiments, the terminal device may of course also adopt an analysis and determination method of the memory usage feature parameter different from that listed herein, and the adaptive switching method of the memory execution policy of the present invention is not specifically limited to the analysis and determination method of the memory usage feature parameter.
Step S300, adjusting the preset general execution strategy of the memory according to the use characteristic parameters to obtain a special execution strategy;
after the terminal equipment analyzes the determined memory in a preset time period and uses the use characteristic parameters when the memory is used by a user to execute the data reading and writing task, the preset general execution strategy of the memory is extracted, and then the general execution strategy is further adjusted into a special execution strategy which can obtain high performance of the memory in the use process of the user according to the use characteristic parameters.
Further, the memory preset general execution policies include, but are not limited to: in a possible embodiment, the step S300 may include:
step S301, adjusting the read-write strategy, the wear balance strategy, the garbage collection strategy and/or the power-down protection strategy according to the usage characteristic parameters to obtain a dedicated read-write strategy, wear balance strategy, garbage collection strategy and/or power-down protection strategy.
After the general execution strategies such as a preset read-write strategy, a wear balance strategy, a garbage collection strategy and a power-down protection strategy of the memory are extracted, the terminal equipment adjusts one or a plurality of strategies among the general execution strategies such as the read-write strategy, the wear balance strategy, the garbage collection strategy and the power-down protection strategy according to the analyzed and determined use characteristic parameters when the memory is used by a user for executing a data read-write task in a preset time period, so that the adjusted one or a plurality of strategies can be used as a special execution strategy of the memory, wherein the special execution strategy can be used for obtaining high performance in the use process of the user.
Specifically, for example, after the terminal device extracts the general execution policy such as the read-write policy, wear balance policy, garbage collection policy, and power-down protection policy of the memory, which are defined by the design developer or the user at his own discretion, the specific gravity of the read data of the memory determined by analysis in the week is 99.1% according to the total data write amount of-20M and the total data read amount of-2.1 GB, which have been previously based on the memory in the week, and the specific gravity of the write data of the memory is only 0.9% when the memory is used by the user in the week, so that the terminal device adjusts the read-write policy among the general execution policies such as the read-write policy, wear balance policy, garbage collection policy, and power-down protection policy of the memory, and then the terminal device uses the specific read-write policy obtained by adjusting the read-write policy alone, together with other general execution policies such as the non-adjusted balance policy, garbage collection policy, and power-down protection policy, as the specific execution policy of the memory, so that the terminal device can obtain the high performance of the garbage can be performed by the user in the subsequent user in the process of performing the read-write data.
Alternatively, the terminal device may adjust the read-write policy among the general execution policies preset for the memory to obtain the special read-write policy based on a time zone in which the memory is used by the user to perform the data read-write task, in addition to the fact that the specific gravity of the read data is 99.1% when the memory is used by the user in the one week and the specific gravity of the write data is only 0.9% when the memory is used by the user in the one week, which are determined according to the above analysis: the time for the memory to perform data read and write tasks is concentrated in the morning 08 each day: 30 to 20:00 a.m. and the memory has records that the data read-write task is still executed until 23:30 a.m. so that the terminal device adjusts the garbage collection policy in the general execution policies such as wear balance policy, garbage collection policy and power-down protection policy which are not adjusted to the memory to obtain a special garbage collection policy, namely, adjusts the garbage collection time of the garbage collection policy to a time zone when the memory does not execute the data read-write task or the number of times of executing the data read-write task is relatively less: 02 per day: 00 to 06:00, and/or 21 per day: 00 to 23:59, so that the terminal equipment uses the adjusted special read-write strategy, the special garbage collection strategy, other general execution strategies such as the power-down protection strategy which are not adjusted and the like together as the special execution strategy of the memory when the memory is used by a user in the follow-up process, and further, the memory is enabled to be more focused on data reading in the follow-up process when the memory is used by the user to execute a data reading task, and does not occupy excessive resources for garbage collection when the data reading task is executed, so that the performance is higher.
Further, in another possible embodiment, after determining the usage characteristic parameter of the memory according to the operation data in the step S200, the adaptive switching method of the memory execution policy of the present invention may further include:
and step S500, adjusting the currently used execution strategy of the memory according to the use characteristic parameters to obtain a special execution strategy.
In this embodiment, because the usage feature parameters of the memory are analyzed and determined based on the operation data of the memory in the preset time period when the memory is used by the user to execute the data read-write task, the current usage of the memory is already based on the execution policy after the adjustment for the general execution policy, after the current analysis determines the usage feature parameters of the memory when the memory is used by the user to execute the data read-write task, the terminal device can directly adjust each execution policy currently used by the memory according to the usage feature parameters to obtain the special execution policy. In addition, the process of the terminal device adjusting each execution policy currently used by the memory based on the usage feature parameter to obtain the dedicated execution policy is the same as the process of the terminal device adjusting each general execution policy of the memory based on the usage feature parameter to obtain the dedicated execution policy, so the process of the terminal device adjusting each execution policy currently used by the memory based on the usage feature parameter to obtain the dedicated execution policy will not be described in detail herein.
Step S400, switching the execution policy currently used by the memory to the dedicated execution policy.
After the general execution strategy is adjusted to be the special execution strategy which can obtain high-performance of the memory in the use process of the user, the terminal equipment firstly determines the execution strategy used by the memory at the current moment and then switches the execution strategy used by the memory at the current moment to be the special execution strategy, so that the memory can obtain high-performance when being used by the user to execute the data reading and writing task.
Further, in a possible embodiment, step S400 may include:
step S401, detecting the idle time of the memory, and switching the target execution strategy in each execution strategy currently used by the memory into the special execution strategy in the idle time;
before switching the execution strategy currently used by the memory, the terminal equipment detects the idle time when the memory is not used by a user and does not need to execute a data read-write task, and then after detecting that the system time reaches the idle time, the terminal equipment can switch the target execution strategy to be switched in each execution strategy currently used by the memory into a corresponding special execution strategy.
In this embodiment, the currently used execution policies of the memory may be all the general execution policies such as an unregulated read-write policy, a wear balance policy, a garbage collection policy, and a power-down protection policy, or may be a general execution policy such as a dedicated read-write policy, a dedicated garbage collection policy, a wear balance policy, and a power-down protection policy, which are obtained after the portion is regulated.
Specifically, for example, the terminal device may be based on a time period during which the memory is used by the user to perform the data read-write task: daily morning 08:30 to 20:00 a.m. and the memory has a record that the data read-write task is being performed until 23:30 a.m. so that the terminal device determines the time period that the memory is not needed to be used by the user to not perform the data read-write task: 02 per day: 00 to 06:00, determined as the idle time of the memory.
Further, in a possible embodiment, in the step S401, the step of switching, during the idle time, the target execution policy of the execution policies currently used by the memory to the dedicated execution policy may include:
Step S4011, in the idle time, determining a target execution policy corresponding to the dedicated execution policy from among the execution policies currently used by the memory, and switching the target execution policy to the dedicated execution policy.
After determining the space time of the memory for not executing the data read-write task, the terminal device immediately determines a target execution strategy which is different from the regulated special execution strategy and needs to be switched from the execution strategy currently used by the memory, and then the terminal device switches the target execution strategy into a corresponding special execution strategy.
Specifically, for example, when the terminal device adjusts the read-write strategy and the garbage collection strategy among the general execution strategies aiming at the memory to obtain a special read-write strategy and a special garbage collection strategy, the execution strategies currently used by the memory are all general execution strategies such as an unadjusted read-write strategy, a wear balance strategy, a garbage collection strategy and a power-down protection strategy, so that the terminal device immediately determines that the read-write strategy and the garbage collection strategy currently used by the memory are target execution strategies needing to be switched after detecting that the system time reaches 02:00, and the terminal device further switches the read-write strategy and the garbage collection strategy into the special read-write strategy and the special garbage collection strategy.
In this embodiment, through a terminal device currently used for controlling data reading and writing, operation data when the memory executes a data reading and writing task is continuously collected in a preset time period in a process of controlling the memory to execute a data reading and writing task triggered by a user; after acquiring operation data of a data read-write task triggered by a user in a preset time period, the terminal equipment analyzes and determines the use characteristic parameters of the memory when the memory is used by the user based on the operation data; after the terminal equipment extracts the preset general execution strategy of the memory based on the use characteristic parameters of the memory, which are determined by analysis, in a preset time period and are used by a user to execute a data reading and writing task, the general execution strategy is further adjusted into a special execution strategy which can obtain high performance of the memory in the use process of the user according to the use characteristic parameters; after the general execution strategy is adjusted to be the special execution strategy which can obtain high-performance of the memory in the use process of the user, the terminal equipment firstly determines the execution strategy used by the memory at the current moment and then switches the execution strategy used by the memory at the current moment to be the special execution strategy, so that the memory can obtain high-performance when being used by the user to execute the data reading and writing task.
Therefore, the invention continuously collects the operation data of the memory when the memory executes the data read-write task of the user in the preset time period in the process of using the memory by the user, then analyzes and determines the use characteristic parameters expressed by the memory in the use process of the user based on the collected operation data of the memory in the time period, thereby adjusting the preset general execution strategy of the memory to a special execution strategy capable of enabling the memory to obtain high performance expression in the use process of the user based on the use characteristic parameters, and finally switching the execution strategy currently used by the memory to the special execution strategy obtained after adjustment, so that the memory operates according to the special execution strategy in the subsequent use process of the user.
Compared with the existing mode of configuring the general memory execution strategy only on the memory, the method and the device have the advantages that the characteristic parameters of the memory in the process of being used by a user are determined based on analysis, and the execution strategy of the memory is adaptively adjusted and switched based on the characteristic parameters so that the memory can achieve high-performance in the process of being used by the user, and therefore the problem that the general memory execution strategy for configuring the memory cannot guarantee that the memory can maintain optimal data read-write performance is solved.
In addition, the characteristic parameters of the memory at different times used by the user are periodically acquired, analyzed and determined, so that the dynamic adjustment and switching of the execution strategy of the memory can be realized, the memory used by the user can be always ensured to have good performance, and the stability of the memory in the whole use process is improved.
Further, based on the first embodiment of the adaptive switching method of the memory execution policy of the present invention, a second embodiment of the adaptive switching method of the memory execution policy of the present invention is provided, in the second embodiment of the adaptive switching method of the memory execution policy of the present invention, the adaptive switching method of the memory execution policy of the present invention may further include:
step S600, adjusting the time period according to the operation data;
after the terminal device sets a time period for collecting the operation data of the memory based on the configuration of the development designer of the memory or the user, the terminal device can also adjust the time period based on whether the operation data collected in the time period can analyze and determine the use characteristic parameters of the memory.
Further, in a possible embodiment, the step S600 may include:
step S601, detecting whether the data amount of the operation data exceeds a preset data amount threshold;
it should be noted that, in this embodiment, the preset data amount threshold is the lowest data amount of the operation data according to which the terminal device can accurately analyze and determine the usage characteristic parameter of the memory when the memory is used by the user to perform the data reading and writing task.
And the terminal equipment continuously collects operation data of the memory when the data read-write task triggered by the user is executed each time in the current preset time period, and then detects whether the number of the operation data exceeds a preset data quantity threshold value.
Specifically, for example, the terminal device is set in advance based on a design developer configuration of the memory or a user's discretion, and the minimum data amount of operation data according to which the terminal device can accurately analyze and determine the usage characteristic parameters of the memory when used by the user to perform a data read-write task is set as: and after the terminal equipment continuously collects the data writing quantity, the data reading quantity, the memory wear condition and other operation data when the memory is used by a user to execute each data reading and writing task within a preset week, the terminal equipment immediately detects whether the number of the data writing quantity and the data reading quantity of the memory for executing the data reading and writing task, which are collected within the week, is greater than 10.
Step S602, if yes, shortening the time period or keeping the time period unchanged;
if the terminal device detects that the number of the operation data of the acquired memory in the current preset time period exceeds the preset data quantity threshold, the terminal device appropriately shortens the time period or still keeps the current preset time period unchanged.
Specifically, for example, if the terminal device detects that the number of each of the data writing amount and the data reading amount of the memory which is acquired in one week to perform the data writing/reading task is 20, the terminal device determines that the use characteristic parameter of the memory can be accurately analyzed and determined based on the data writing amount and the data reading amount of the memory which are acquired in the one week to thereby keep the one week unchanged to acquire the operation data of the memory in the next week.
Or if the terminal equipment detects that the number of each data writing quantity and each data reading quantity of the memory for executing the data reading and writing task acquired within one week is 100 and is far greater than the minimum data quantity, the terminal equipment shortens the one week to 1 day so as to acquire the operation data of the memory within 1 day later.
Step S603, if not, extending the time period.
If the terminal equipment detects that the quantity of the operation data of the acquired memory in the current preset time period does not exceed the preset data quantity threshold value, the terminal equipment prolongs the current preset time period.
Specifically, for example, if the terminal device detects that the number of data writing amounts and/or the number of data reading amounts of the memory performing the data writing/reading task acquired in one week is smaller than 10, the terminal device determines that the use characteristic parameters of the memory cannot be accurately analyzed and determined based on the data writing amounts and the data reading amounts of the memory performing the data writing/reading task acquired in the one week, so that the terminal device extends the one week to two weeks or one month or even one year, and then the terminal device acquires the operation data of the memory in the two weeks or one month or even one year later.
It should be noted that, in this embodiment, the terminal device may determine, based on design requirements of an actual application, a time that the terminal device should specifically extend for a current preset time period when the number of collected operation data of the memory does not exceed the data amount threshold. It should be understood that, the adaptive switching method of the memory execution strategy of the present invention is not specifically limited to this specific design for a prolonged period of time, and therefore, will not be described in detail herein.
In this embodiment, after a time period for acquiring operation data of a memory is set by a terminal device based on a development designer of the memory or a configuration of a user, the terminal device may adjust the time period based on whether the operation data acquired in the time period can analyze and determine the operation characteristic parameters of the memory, so that the operation data acquired by the terminal device when the memory performs a data read-write task can be used for accurately analyzing and determining the operation characteristic parameters when the memory is used by the user, and further accurately adjusting an execution policy of the memory, thereby ensuring that the adjusted special execution policy is used in switching, so that the memory obtains high performance, and further improving the overall stability of the memory.
In addition, referring to fig. 3, an embodiment of the present invention further provides an adaptive switching system of a memory execution policy, where the adaptive switching system of the memory execution policy includes:
the acquisition module is used for acquiring the operation data of the memory in a preset time period;
the determining module is used for determining the use characteristic parameters of the memory according to the operation data;
The adjusting module is used for adjusting the general execution strategy preset for the memory according to the using characteristic parameters to obtain a special execution strategy;
and the switching module is used for switching the execution strategy currently used by the memory into the special execution strategy.
Preferably, the general execution strategy includes, but is not limited to: the adjustment module is further configured to adjust the read-write strategy, the wear-balance strategy, the garbage collection strategy and/or the power-down protection strategy according to the usage characteristic parameters to obtain a dedicated read-write strategy, wear-balance strategy, garbage collection strategy and/or power-down protection strategy.
Preferably, the adjusting module of the adaptive switching system of the memory execution policy of the present invention is further configured to adjust the execution policy currently used by the memory according to the usage characteristic parameter to obtain a dedicated execution policy.
Preferably, the switching module is further configured to detect an idle time of the memory, and switch a target execution policy in each execution policy currently used by the memory to the dedicated execution policy in the idle time;
And the switching module is further configured to determine, in the idle time, a target execution policy corresponding to the dedicated execution policy from among execution policies currently used by the memory, and switch the target execution policy to the dedicated execution policy.
Preferably, the operation data includes, but is not limited to: data writing quantity, data reading quantity and memory wear condition, the collection module still includes:
the first detection unit is used for continuously detecting the data writing quantity, the data reading quantity and the memory wear condition of the memory;
and the recording unit is used for recording the data writing quantity, the data reading quantity and the memory wear condition detected in the preset time period so as to form operation data of the memory in the time period.
Preferably, the adaptive switching system of the memory execution strategy according to the embodiment of the present invention further includes:
the period adjustment module is used for adjusting the time period according to the operation data;
the period adjustment module includes:
a second detection unit for detecting whether the data amount of the operation data exceeds a preset data amount threshold;
A first adjustment unit for shortening the time period or keeping the time period unchanged;
and the second adjusting unit is used for prolonging the time period.
Preferably, the usage characteristic parameters include, but are not limited to: the determining module includes:
a first determining unit configured to determine a specific gravity of the read data and a specific gravity of the write data based on the data writing amount and the data reading amount; the method comprises the steps of,
and the second determining unit is used for determining the data cold and hot state of the read-write data based on the abrasion condition of the memory.
The steps implemented by each functional module of the adaptive switching system of the memory execution policy of the present invention during operation may refer to each embodiment of the adaptive switching method of the memory execution policy of the present invention, which is not described herein.
The self-adaptive switching system of the memory execution strategy of the invention can be particularly used for terminals or scenes such as SSD (Solid State Disk or Solid State Drive, solid State drive) storage of a PC (Personal Computer ), platform storage (such as eMMC (Embedded Multi Media Card, standard specification of embedded memory for products such as a mobile phone or a tablet personal computer, etc.), mobile phone, television set top box, T card (TF card, also called microSD, which is a very small flash memory card), automobile data recorder, video equipment, and the like.
In addition, the embodiment of the invention also provides a terminal device, which comprises: the method comprises the steps of a memory, a processor and a memory execution strategy adaptive switching program stored on the memory and capable of running on the processor, wherein the memory execution strategy adaptive switching program is executed by the processor to realize the memory execution strategy adaptive switching method.
The steps implemented when the adaptive switching program of the memory execution policy running on the processor is executed may refer to various embodiments of the adaptive switching method of the memory execution policy of the present invention, which are not described herein.
In addition, the embodiment of the invention also provides a computer storage medium, which is applied to a computer, and the computer storage medium can be a nonvolatile computer readable computer storage medium, and the computer storage medium stores an adaptive switching program of a memory execution strategy, and the adaptive switching program of the memory execution strategy realizes the steps of the adaptive switching method of the memory execution strategy when being executed by a processor.
The steps implemented when the adaptive switching program of the memory execution policy running on the processor is executed may refer to various embodiments of the adaptive switching method of the memory execution policy of the present invention, which are not described herein.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The foregoing embodiment numbers of the present invention are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a computer storage medium (such as a Flash memory, a ROM/RAM, a magnetic disk, an optical disk) and including several instructions for causing a terminal device (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method according to the embodiments of the present invention.
The foregoing description is only of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention, but rather is intended to cover any equivalents of the structures or equivalent processes disclosed herein or in the alternative, which may be employed directly or indirectly in other related arts.

Claims (8)

1. An adaptive switching method of a memory execution policy, wherein the adaptive switching method of the memory execution policy includes:
collecting operation data of the memory in a preset time period;
determining a use characteristic parameter of the memory according to the operation data;
adjusting a general execution strategy preset for the memory according to the using characteristic parameters to obtain a special execution strategy;
switching the execution strategy currently used by the memory into the special execution strategy;
the general execution strategy includes, but is not limited to: the step of adjusting the general execution strategy preset for the memory according to the use characteristic parameters to obtain a special execution strategy comprises the following steps:
Adjusting the read-write strategy, the wear balance strategy, the garbage collection strategy and/or the power-down protection strategy according to the use characteristic parameters to obtain a special read-write strategy, a wear balance strategy, a garbage collection strategy and/or a power-down protection strategy;
the operational data includes, but is not limited to: the step of collecting the operation data of the memory in a preset time period comprises the following steps of:
continuously detecting the data writing quantity, the data reading quantity and the memory wear condition of the memory;
recording the data writing amount, the data reading amount and the memory wear detected in the preset time period to form operation data of the memory in the time period.
2. The adaptive switching method of a memory implementation strategy according to claim 1, further comprising, after the step of determining the usage characteristic parameters of the memory according to the operation data:
and adjusting the current execution strategy of the memory according to the use characteristic parameters to obtain a special execution strategy.
3. The adaptive switching method of memory execution policies according to claim 1, wherein the step of switching the execution policy currently used by the memory to the dedicated execution policy comprises:
detecting the idle time of the memory, and switching a target execution strategy in all execution strategies currently used by the memory into the special execution strategy in the idle time;
the step of switching the target execution policy in the execution policies currently used by the memory to the dedicated execution policy during the idle time includes:
and in the idle time, determining a target execution strategy corresponding to the special execution strategy from all the execution strategies currently used by the memory, and switching the target execution strategy into the special execution strategy.
4. A method for adaptive switching of memory execution policies as recited in any one of claims 1 or 3, the method further comprising:
adjusting the time period according to the operation data;
the step of adjusting the time period according to the operation data includes:
detecting whether the data volume of the operation data exceeds a preset data volume threshold;
If yes, shortening the time period or keeping the time period unchanged;
if not, the time period is prolonged.
5. The adaptive switching method of a memory implementation strategy of claim 1, wherein the usage characteristic parameters include, but are not limited to: the proportion of the read data, the proportion of the stored and written data and the data cold-hot state of the read and written data,
the step of determining the usage characteristic parameters of the memory according to the operation data comprises the following steps:
determining a specific gravity of the read data and a specific gravity of the write data based on the data writing amount and the data reading amount; the method comprises the steps of,
and determining the data cold and hot state of the read-write data based on the memory wear condition.
6. An adaptive switching system for a memory execution policy, the adaptive switching system for a memory execution policy comprising:
the acquisition module is used for acquiring the operation data of the memory in a preset time period, wherein the operation data comprises but is not limited to: data writing amount, data reading amount and memory wear condition;
the determining module is used for determining the use characteristic parameters of the memory according to the operation data;
The adjusting module is configured to adjust the general execution policy preset for the memory according to the usage feature parameter to obtain a specific execution policy, where the general execution policy includes but is not limited to: a read-write strategy, a wear balance strategy, a garbage collection strategy and a power-down protection strategy;
the switching module is used for switching the execution strategy currently used by the memory into the special execution strategy;
the acquisition module is also used for continuously detecting the data writing quantity, the data reading quantity and the abrasion condition of the memory; recording the data writing quantity, the data reading quantity and the memory wear condition detected in the preset time period to form operation data of the memory in the time period;
the adjustment module is further configured to adjust the read-write strategy, the wear balance strategy, the garbage collection strategy and/or the power-down protection strategy according to the usage characteristic parameters to obtain a dedicated read-write strategy, wear balance strategy, garbage collection strategy and/or power-down protection strategy.
7. A terminal device, characterized in that the terminal device comprises: memory, a processor and a memory execution policy adaptive switching program stored on the memory and executable on the processor, which when executed by the processor, implements the steps of the memory execution policy adaptive switching method according to any one of claims 1 to 5.
8. A computer storage medium, characterized in that the computer storage medium has stored thereon a computer program which, when executed by a processor, implements the steps of the adaptive switching method of a memory execution strategy according to any of claims 1 to 5.
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